CN101298676B - Manufacturing method of insulation heat-conducting metal substrate - Google Patents
Manufacturing method of insulation heat-conducting metal substrate Download PDFInfo
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- CN101298676B CN101298676B CN2007100221254A CN200710022125A CN101298676B CN 101298676 B CN101298676 B CN 101298676B CN 2007100221254 A CN2007100221254 A CN 2007100221254A CN 200710022125 A CN200710022125 A CN 200710022125A CN 101298676 B CN101298676 B CN 101298676B
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- plasma
- reaction chamber
- metal substrate
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- heat
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Abstract
The invention discloses a production method of an insulating and heat-conducting metallic parent material, which comprises the following steps: (1) a metallic parent material is provided and placed into a plasma reaction chamber; (2) a gas mixture with mixed high-erosiveness gas is let into the plasma reaction chamber, and the surface of the metallic parent material is eroded irregularly, thus forming the material with nano-level surface roughness; and (3) the chemical vapor deposition of plasmas is implemented in the plasma reaction chamber, free radical plasmas are generated, and multiple highly heat-conducting coating layers are formed on the surface of the metallic parent material; (4) coating is carried out with a layer of highly heat-conducting and insulating gum. The production method of the insulating and heat-conducting metallic parent material can implement even plating on any metallic substrates with any surface state and realize the quantitative control of heat conductivity.
Description
[technical field]
The present invention is a kind of manufacture method of insulation heat-conducting metal substrate, the particularly a kind of manufacture method that can carry out the insulation heat-conducting metal substrate of even plated film to the metal base of any condition of surface.
[background technology]
The good insulation performance heat conducting base material must possess high thermal conductivity, insulativity, low-expansion coefficient.
One of tradition insulating heat-conductive substrate preparation method is printed foil circuit such as a FR4 printed wiring base material (PCB) on plastic basis material, and its thermal conductivity (K) is about 0.36W/mK, and its shortcoming is that thermal characteristics is relatively poor.
Two of insulating heat-conductive substrate preparation method is to need to attach a slice metal sheet such as aluminium base on the PCB base material, and promptly so-called Metal Core PCB base material is to improve radiating efficiency.But the thermal conductivity of its dielectric layer is equivalent to the printed wiring base material, and service temperature is confined in 140 ℃ simultaneously, and process temperatures is confined in 250～300 ℃.
Three of insulating heat-conductive substrate preparation method is directly to adopt the ceramic base material such as the AlN/SiC base material of sinter molding, has good insulativity and thermal conductivity, but its size is limited to below 4.5 square inches, can't be used for large-area panel.
In addition, four of insulating heat-conductive substrate preparation method is to carry out the direct copper joint base material (DBC, Direct Bonded Copper) that association reaction obtains under logical 02 high temperature between copper coin and the pottery, has high thermal conductivity and low heat expansion property and dielectricity concurrently.But its operation and process temperatures need be higher than more than 800 ℃.
Yet there are no on the market on metal base at present, (PlasmaChemical Vapor Deposit ion, PCVD) the coating thin film technology of the novelty that combines with two kinds of methods of reactive colloid coating prepares the method for insulation heat-conducting metal substrate to the utilization Plasma Enhanced Chemical Vapor Deposition (PECVD).
[summary of the invention]
The object of the invention is to provide a kind of manufacture method that can carry out the insulation heat-conducting metal substrate of even plated film to the metal base of any condition of surface.
For reaching above-mentioned purpose, the manufacture method of insulation heat-conducting metal substrate of the present invention comprises the steps: that (1) provides a base material and this metal base is placed plasma reaction chamber; (2) gaseous mixture that will be mixed with highly aggressive gas feeds in this plasma reaction chamber, and the erosion of the surface of this metal base being done irregularity is to form the nano level surfaceness; (3), produce the free radical plasma, and form laminated high heat-conducting coating on the surface of this metal base in this plasma reaction chamber ionic medium chemical vapour deposition; (4) coating one deck high heat conductive insulating glue.
Wherein high heat conducting coating comprises plasma interface conversion layer and plasma high heat conductive insulating layer, and this high heat conducting coating forms for the PCVD superposition.
Compared with prior art, with the thin film deposition of PCVD processing procedure use in the preparation of insulating heat-conductive substrate, several advantages are arranged: because the PCVD processing procedure is a kind of dry type coating process, therefore can not change metal base and only can change surface property, but the chemical of gaseous state evaporation soon and coagulable is deposited on the metal base.The PCVD processing procedure is a kind of pure thin film deposition process, and accurately the chemical ingredients of control coating and nanometer are to micron-sized deposit thickness.And produce the plasma (the first free radical plasma and the second free radical plasma) that only comprises free radical on the process nature of ionic medium activating gas mixt of the present invention, be not electric neutrality owing to free radical is charged, so the distribution of free radical can not be subjected to the electric field influence of (being used to keep plasma).Therefore, the first free radical plasma and the second free radical plasma can be evenly distributed in this metal base around and uniform deposition in the surface of this metal base, and the condition of surface of metal substrate can not influence the homogeneity of plated film, and be coated with one deck high heat conductive insulating glue at last, so can realize the quantification control of heat-conductive characteristic by kind, quantity and its heat-conductive characteristic of high-heat-conductivity glue gauge control of high C-factor in the high-heat-conductivity glue.
[embodiment]
The manufacture method of insulation heat-conducting metal substrate of the present invention comprises the steps:
1, provides a metal base, this base material can be copper alloy, stainless steel, Ni-Ti alloy, magnesium alloy or aluminium alloy, and the surface of this metal base is strip, plane, curved surface or 3D shape, and this base material carried out pre-treatment, specifically comprise steps such as degreasing, pickling, cleaning, make its cleaning surfaces, and this metal base is placed plasma reaction chamber, at this moment, metallic substrate surface can be with 20～30 volts negative voltage.
Above-mentioned plasma reactor chamber can be batch or continous way (in-line) chemical vapor deposition reaction chamber.
2, plasma pre-treatment
The gaseous mixture that is mixed with highly aggressive gas is fed in this plasma reaction chamber, irregularity is done on the surface of this metal base corroded, wherein, comprise also in this gaseous mixture that reactant gas (can be O to form the nano level surfaceness
2Or N
2) or rare gas element (can be Ar or He).
Above-mentioned highly aggressive gas can be CF
4, CF
2Cl
2Or Cl
2One or more.
3, plasma gas-phase deposit
This metal base carries out PCVD in this plasma reaction chamber, so that its surface forms laminated high heat-conducting coating, wherein, this high heat conducting coating formed with plasma interface conversion layer and plasma high heat conductive insulating stacking adding, and plasma gas-phase deposit specifically comprises following two fine division step: plasma gas-phase deposit graded bedding and plasma gas-phase deposit high heat conductive insulating layer.
(3-1) plasma gas-phase deposit graded bedding
To be mixed with silicon source precursor (Precursor, as TMS) gaseous mixture feed in this plasma reaction chamber, produce the first free radical plasma by this gaseous mixture of plasma activation in plasma reaction chamber, the first free radical plasma produces plasma interface conversion layer (for example silicon-dioxide) against the surface that low-pressure vapor phase is diffused in this metal base.The plasma interface conversion layer can be the hydrophobic or hydrophilic characteristic surface who converts may command and homogeneous in metallic surface, and can reduce surface roughness by big spoke.The thickness of this plasma interface conversion layer is from about 10 nanometers to 10 micron, and the structure of this plasma interface conversion layer can be unitary film or multilayer film, can change at any time that the gas phase composition is formed and the superposition or the gradual change that form plasma deposition of different nature interface conversion layer.
More than, also comprise reactant gas in the gaseous mixture, and reactant gas comprises oxygen or water vapour.
(3-2) plasma gas-phase deposit high heat conductive insulating layer
The gaseous mixture that is mixed with high heat conduction chemistry precursors is fed in this plasma reaction chamber, in plasma reaction chamber, produce the second free radical plasma by this gaseous mixture of plasma activation, the second free radical plasma produces plasma high heat conductive insulating layer against the surface that low-pressure vapor phase is diffused in this plasma interface conversion layer, wherein, the high heat conductive insulating layer that is produced can be AlN, BeO or Ta
2O
5The high heat conductive insulating layer thickness is from about 20 nanometers to 10 micron.
The high heat conduction chemistry precursors that includes metal or pottery in the above-mentioned gas mixture is (as the precursors Ta (EtCp) of Ta
2(CO) H EtCp or Al (CH
3)
3), reactant gas is (as O
2, N
2, H
2O or NH
3) and rare gas element (as Ar or He).
4, coating one layer thickness is the high heat conductive insulating glue of 5～25 μ m, and this high heat conductive insulating glue can be one of ultraviolet hardening, heat curing-type or ultraviolet hardening mixing heat curing-type, and its thermal conductivity〉2～3W/ (m
K), cracking temperature〉200 ℃, thermal resistance Buddhist nun is between 0.3～0.7W/ (m
K), and coating can adopt rotary coating (Spin) or dip-coating (Dip) or printing (Print) mode.
More than, the high-heat-conductivity glue insulation is to make by adding high C-factor in the insulation paste.
Claims (10)
1. the manufacture method of an insulation heat-conducting metal substrate is characterized in that this method comprises the following steps:
(1) provide a metal base also this metal base to be placed plasma reaction chamber;
(2) gaseous mixture that will be mixed with highly aggressive gas feeds in this plasma reaction chamber, and the erosion of the surface of this metal base being done irregularity is to form the nano level surfaceness;
(3), produce the free radical plasma, and form laminated high heat-conducting coating on the surface of this metal base in this plasma reaction chamber ionic medium chemical vapour deposition; Wherein, step (3) comprising:
(3-1) gaseous mixture that will be mixed with silicon source precursor feeds in this plasma reaction chamber, produce the first free radical plasma by this gaseous mixture of plasma activation in plasma reaction chamber, the first free radical plasma produces the plasma interface conversion layer against the surface that low-pressure vapor phase is diffused in this metal base;
(3-2) gaseous mixture of chemical precursors that will be mixed with metal or pottery feeds in this plasma reaction chamber, produce the second free radical plasma in plasma reaction chamber by this gaseous mixture of plasma activation, the second free radical plasma produces plasma high heat conductive insulating layer against the surface that low-pressure vapor phase is diffused in this plasma interface conversion layer;
(4) coating one deck high heat conductive insulating glue.
2. the manufacture method of insulation heat-conducting metal substrate as claimed in claim 1, it is characterized in that: this high heat conductive insulating glue is one of ultraviolet hardening, heat curing-type or ultraviolet hardening mixing heat curing-type.
3. the manufacture method of insulation heat-conducting metal substrate as claimed in claim 1 or 2, it is characterized in that: the surface of this metal base is one of strip, plane, curved surface or 3D shape.
4. the manufacture method of insulation heat-conducting metal substrate as claimed in claim 3, it is characterized in that: this base material is one of copper alloy, stainless steel, Ni-Ti alloy, magnesium alloy or aluminium alloy.
5. the manufacture method of insulation heat-conducting metal substrate as claimed in claim 1, it is characterized in that: this metal base has passed through pre-treatment before entering plasma reaction chamber, make its cleaning surfaces, comprises degreasing, pickling, cleaning.
6. the manufacture method of insulation heat-conducting metal substrate as claimed in claim 1, it is characterized in that: in the step (2), this gaseous mixture also comprises reactant gas or rare gas element.
7. the manufacture method of insulation heat-conducting metal substrate as claimed in claim 1, it is characterized in that: in the step (3-1), this gaseous mixture also comprises reactant gas, reactant gas is oxygen or water vapour.
8. the manufacture method of insulation heat-conducting metal substrate as claimed in claim 1 is characterized in that: the chemical precursors of this metal or pottery can be Ta (EtCp)
2(CO) H EtCp or Al (CH
3)
3
9. the manufacture method of insulation heat-conducting metal substrate as claimed in claim 1, it is characterized in that: in the step (3-2), this gaseous mixture also comprises reactant gas and rare gas element.
10. the manufacture method of insulation heat-conducting metal substrate as claimed in claim 1, it is characterized in that: above-mentioned plasma reactor chamber is batch or continous way chemical vapor deposition reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100221254A CN101298676B (en) | 2007-04-30 | 2007-04-30 | Manufacturing method of insulation heat-conducting metal substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100221254A CN101298676B (en) | 2007-04-30 | 2007-04-30 | Manufacturing method of insulation heat-conducting metal substrate |
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| Publication Number | Publication Date |
|---|---|
| CN101298676A CN101298676A (en) | 2008-11-05 |
| CN101298676B true CN101298676B (en) | 2010-12-01 |
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ID=40078622
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100221254A Expired - Fee Related CN101298676B (en) | 2007-04-30 | 2007-04-30 | Manufacturing method of insulation heat-conducting metal substrate |
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| CN112178591A (en) * | 2020-09-18 | 2021-01-05 | 广州光联电子科技有限公司 | Preparation method of wavelength conversion device for laser and wavelength conversion device |
| CN112251738A (en) * | 2020-09-30 | 2021-01-22 | 深圳市创智捷科技有限公司 | Preparation method of plasma chemical vapor deposition substrate surface nano-film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1670947A (en) * | 2004-03-16 | 2005-09-21 | 私立逢甲大学 | Integrated radiating base plate and making method thereof |
| CN1831190A (en) * | 2006-04-12 | 2006-09-13 | 上海集成电路研发中心有限公司 | Method for preventing metals from being damaged by high density plasma chemical vapor deposition |
-
2007
- 2007-04-30 CN CN2007100221254A patent/CN101298676B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1670947A (en) * | 2004-03-16 | 2005-09-21 | 私立逢甲大学 | Integrated radiating base plate and making method thereof |
| CN1831190A (en) * | 2006-04-12 | 2006-09-13 | 上海集成电路研发中心有限公司 | Method for preventing metals from being damaged by high density plasma chemical vapor deposition |
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|---|---|
| CN101298676A (en) | 2008-11-05 |
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