CN104081455B - Alloy for soft magnetic film layers, which has low saturation magnetic flux density and is to be used in magnetic recording medium, and sputtering target material - Google Patents
Alloy for soft magnetic film layers, which has low saturation magnetic flux density and is to be used in magnetic recording medium, and sputtering target material Download PDFInfo
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- 238000005477 sputtering target Methods 0.000 title abstract 2
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- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 12
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- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 229910052742 iron Inorganic materials 0.000 claims abstract description 11
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
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- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
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- 229910052732 germanium Inorganic materials 0.000 claims abstract description 7
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/12—Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium, or niobium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/14—Ferrous alloys, e.g. steel alloys containing titanium or zirconium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Provided are: an alloy for soft magnetic film layers, which has low saturation magnetic flux density and is to be used in a magnetic recording medium; and a sputtering target material. This alloy contains one or more elements selected from the group consisting of Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Ni, Cu, Al, B, C, Si, P, Zn, Ga, Ge and Sn, with the balance made up of Co and Fe, while satisfying, in at%, the following formulae (1)-(3). (1) 0.50 <= Fe%/(Fe% + Co%) <= 0.90 (2) 5 <= TAM <= 25 (3) 15 <= TAM + TNM <= 25. In this connection, the above-mentioned TAM and TNM are respectively defined as TAM = Y% + Ti% + Zr% + Hf% + V% + Nb% + Ta% + B%/2 and TNM = Cr% + Mo% + W% + Mn% + Ni%/3 + Cu%/3 + Al% + C% + Si% + P% + Zn% + Ga% + Ge% + Sn%.
Description
Cross-Reference to Related Applications
This application claims the priority of the Japanese patent application the 2012-22096th that on 2 3rd, 2012 submit to, its whole
Content is all incorporated herein by reference.
Technical field
The present invention relates to a kind of being used in magnetic recording medium and with the soft magnetic film of low saturation flux density
Layer alloy and sputter target material.
Background technology
In recent years, magnetic recording technology has had significant progress, the raising of the packing density in magnetic recording medium
Due to increase drive capacity and make progress, and vertical magnetism record system have been put into it is actually used in, it is compared
Packing density higher is realized in usually used longitudinal magnetic record system.Additionally, as vertical magnetism record system
Using, also examined for by heat or microwave radiation technology record method.
Above-mentioned vertical magnetism record system is a kind of easy magnetizing axis in the magnetic film perpendicular to perpendicular magnetic recording media
The system that the side of dielectric surface is upwardly oriented, and be a kind of method for being suitable for high record density.For perpendicular magnetic recording
Recording system, has developed a kind of double record with the increased magnetic recording film layer of recording sensitivity and soft magnetism film layer and has been situated between
Matter.For magnetic recording film layer, usually using CoCrPt-SiO2- it is alloy.
Additionally, inserting the anti-ferromagnetism coupling between Ru films, and soft magnetic film and Ru films generally between soft magnetism film layer
(hereinafter referred to as AFC couplings) is closed to impart to the not sensillary area domain (immunity) of external magnetic field (hereinafter referred to as
Hbias).For example, as disclosed in Japanese Patent Publication the 2011-86356th (patent document 1), this is right in order to improve
Use the patience of outside noise magnetic field in the environment of magnetic recording medium.Alloy for soft magnetism film layer of the invention can
There is the medium of vertical magnetism record system for these.
Additionally, for conventional soft magnetic film layer, high saturation magnetic flux density (hereinafter referred to as Bs) and height are amorphous
Forming ability (hereinafter referred to as amorphous property) has been required, and purposes according to perpendicular magnetic recording media and is made
With the environment residing for them, extra multifrequency nature such as highly corrosion resistant and high rigidity are also needed in addition.In above-mentioned required spy
In property, Bs high is especially important；For example, patent document 1, Japanese Patent Publication the 2011-181140th (patent document 2) and
The purpose of Japanese Patent Publication the 2008-299905th (patent document 3) is also Bs high.The reason for needing this Bs high be,
It is required not less than the Bs of a certain value for the magnetization of stable recording film, and assigns big Hbias.
However, being had also the drawback that using the soft magnetic film with Bs high.Tend to produce using the soft magnetic film for representing Bs high
Give birth to larger Hbias and external noise magnetic field high patience is provided, but similarly, it is soft in the case where magnetic susceptibility is recorded
The excessive magnetic flux that magnetic film includes significantly affects surrounding environment, causes the space needed for writing larger and packing density
Reduce.In addition, it was further observed that, tend to cause the externally-applied magnetic field for more than or equal to Hbias using the film with Hbias high
Magnetized reaction (hereinafter referred to as magnetization rise (rise ofmagnetization)) rust.
Schematically shown in Fig. 1 and risen for the magnetization in the magnetic field more than or equal to Hbias.Generally, by writing
In the case of entering magnetic head and making recording film magnetized, applying makes the magnetic field of the magnetic saturation of soft magnetic film.Therefore, when make magnetization rise become
When blunt, magnetization needs the corresponding larger magnetic field applied to it.As described above, the increase for magnetized magnetic field was caused to week
The inevitable excessive influence in collarette border, records close so as to be difficult to be recorded in the zonule for limiting, and also result in
Degree is reduced.Two kinds of phenomenons of above-mentioned reduction packing density are also referred to as usually said " fuzzy write-in (blurred
writing)”；Although providing the effect for improving fuzzy write-in by suppressing a kind of phenomenon, entered by suppressing two kinds of phenomenons simultaneously
One step provides the effect for improving fuzzy write-in.
Quotation inventory
Patent document
[patent document 1] Japanese Patent Publication the 2011-86356th
[patent document 2] Japanese Patent Publication the 2011-181140th
[patent document 3] Japanese Patent Publication the 2008-299905th
Summary of the invention
Used as the result for carrying out to solve the above problems detailed exploitation, the present inventor thinks, is by exploitation
Make in relatively low Bs also there is Hbias high (to be considered for the magnetized of stable recording film more than 0.5T while having
Bs minimum values) though Bs and also there is the non-retentive alloy that sharp magnetization rises in Hbias high, to external magnetic field
Patience high and the high record density of the suppression for being attributed to " fuzzy write-in " become compatible.
An a kind of embodiment of the invention, there is provided conjunction for soft magnetic ribbon film layer in magnetic recording medium
Gold, wherein
The alloy comprising be selected from by Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Ni, Cu, Al, B, C, Si, P, Zn,
Ga, Ge and Sn composition group in one or more, and surplus Co and Fe；And
In terms of atom % (at%), following formula (1) to (3) is met：
(1) 0.50≤Fe%/(Fe%+Co%)≤0.90；
(2)5≤TAM≤25；With
(3) 15≤TAM+TNM≤25,
Condition is that TAM and TNM are respectively：
TAM=Y%+Ti%+Zr%+Hf%+V%+Nb%+Ta%+B%/2；And
TNM=Cr%+Mo%+W%+Mn%+Ni%/3+Cu%/3+Al%+C%+Si%+P%+Zn%+Ga%+
Ge%+Sn%.
According to one embodiment of the invention it is preferred that, in above-mentioned alloy, meet following formula (4)：
(4) 0.25≤(Nb%+Ta%)/(TAM+TNM)≤1.00.
Another embodiment of the invention, it is preferred that in above-mentioned alloy, meet following formula (5) and/or
(6)：
(5) 0≤Ti%+Zr%+Hf%+B%/2≤5
(6) 0 ＜ Cu%+Sn%+Zn%+Ga%≤10.
Another embodiment of the invention, it is preferred that
Above-mentioned alloy is made up of the following：Selected from by Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Ni, Cu, Al,
B, C, Si, P, Zn, Ga, Ge and Sn composition group in one or more, and surplus Co and Fe；And
In terms of atom %, following formula (1) to (3) is met：
(1) 0.50≤Fe%/(Fe%+Co%)≤0.90；
(2)5≤TAM≤25；With
(3) 15≤TAM+TNM≤25,
Condition is that TAM and TNM are respectively：
TAM=Y%+Ti%+Zr%+Hf%+V%+Nb%+Ta%+B%/2；And
TNM=Cr%+Mo%+W%+Mn%+Ni%/3+Cu%/3+Al%+C%+Si%+P%+Zn%+Ga%+
Ge%+Sn%.
Another embodiment of the invention, it is preferred that above-mentioned alloy has more than 0.5T and less than 1.1T
Saturation flux density.
A kind of another embodiment of the invention, there is provided sputter target material, the sputter target material includes basis
Any one alloy in the embodiment above.
As described above, the present invention can provide a kind of soft magnetic amorphous shape alloy with low saturation flux density, wherein
The alloy has not sensillary area domain high in multilayer film to external magnetic field, and in the multilayer film, the nonmagnetic film of Ru etc. is inserted
Enter between the film of this alloy film and carry out anti-ferromagnetism coupling；Additionally, a kind of for more than not sensillary area domain outer
The magnetization of portion magnetic field rises the non-retentive alloy of good magnetic recording medium；And it is a kind of for manufacturing the film of this alloy
Sputter target material.As described above, the non-retentive alloy in the application is generally without concept actively with low Bs as target.It is this
Thinking is the most concept of characteristic in the present invention.
Brief description
Fig. 1 is the schematic diagram of the magnetization curve of multilayer film.
Fig. 2 is the figure for showing correlation between the Bs of individual layer and the Hbias of multilayer film.
Fig. 3 is the influence for showing the acuity that the Ra of individual layer and the Hbias of multilayer film rise to the magnetization after Hbias
Figure.
Embodiment is described in detail
The present invention will be explained in detail in below.Unless otherwise, " % " means atom %.
The present invention relates to a kind of alloy for soft magnetic ribbon film layer in magnetic recording medium, wherein
This alloy comprising be selected from by Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Ni, Cu, Al, B, C, Si, P, Zn,
Ga, Ge and Sn composition group in one or more, and surplus Co and Fe, be preferably substantially made up of these elements, more
It is preferred that being made up of these elements.Additionally, in alloy of the invention, in terms of atom %, meeting following formula (1) to (3)：
(1) 0.50≤Fe%/(Fe%+Co%)≤0.90；
(2)5≤TAM≤25；With
(3) 15≤TAM+TNM≤25,
Condition is that TAM and TNM are respectively：
TAM=Y%+Ti%+Zr%+Hf%+V%+Nb%+Ta%+B%/2；And
TNM=Cr%+Mo%+W%+Mn%+Ni%/3+Cu%/3+Al%+C%+Si%+P%+Zn%+Ga%+
Ge%+Sn%.
The present invention is will be explained in detail below.
First, the respective Hbias of the soft magnetic film with various compositions is evaluated, to check the group of each soft magnetic film
The influence of paired Hbias, and consequently found that, the level of Hbias not only according to Bs level change, but also according to Fe%/
(Fe%+Co%) change.In other words, even if finding in soft magnetic film with more than 0.5T and (more real than conventional less than 1.1T
Example in the Bs of each it is relatively low) Bs in the case of, it is also possible to by Fe%/(Fe%+Co%) preset range obtain
Hbias high.
Afterwards, the magnetization for being attributed to the externally-applied magnetic field more than or equal to Hbias is checked to rise, and consequently found that, removing
In addition element outside Fe and Co, more Nb and Ta, less Ti, Zr, Hf and B, and add a small amount of Cu, Sn, Zn and
Ga rises on magnetization has influence.Thus, it is found that being set as that predetermined amount can be obtained additionally by by these addition element
The effect that the magnetization of acumen rises is shown while with Hbias high.
Based on such new discovery, different from the spy needed for the conventional soft magnetic film alloy for perpendicular magnetic recording media
Property, it was found that a kind of non-retentive alloy, it shows Hbias high while with relatively low Bs, and in addition with height
While Hbias, show that the magnetization of acumen rises under the externally-applied magnetic field more than or equal to Hbias.Therefore to external noise
(it is being conventionally difficult to compatibility between the patience high in magnetic field and the high record density of the suppression for being attributed to fuzzy write-in
) make it possible to complete the present invention.The reason for being explained below the limitation of alloy of the invention.
(a) 0.50≤Fe%/(Fe%+Co%)≤0.90；
Fe and Co are the minimum magnetized elements needed for for assigning the magnetization of stable recording film, and Bs and Fe%/
(Fe%+Co%) behavior shows in usually said Slater-Pauling curves etc..Even if additionally, in order to relatively low
Bs provides Hbias high, and Fe%/(Fe%+Co%) is also important factor.When Fe%/(Fe%+Co%) is less than 0.50, phase
Than in the soft magnetic film of the Fe% with similar Bs and more than 0.50/(Fe%+Co%), Hbias reductions.Although this phenomenon
Detailed reason do not know, it is believed that the Bs of soft magnetic film and be attributed to magnetic element 3d electron orbits interlayer phase interaction
Coupled with take part in AFC, and it is assumed that depending on the ratio between Fe and Co, the change influence AFC couplings of interaction.
When Fe%/(Fe%+Co%) is more than 0.90, Bs is substantially reduced, and causes Hbias not enough.Additionally, Fe%/(Fe%+Co%)
Preferred scope is more than 0.55 and less than 0.85, more preferably more than 0.60 and less than 0.80.
(b) 5≤TAM≤25 and 15≤TAM+TNM≤25
The performance summary of the element in addition to Fe and Co is as follows.Ti, Zr, Hf and B are to cause noncrystallineization to improve and Bs reductions
And magnetization is risen the element of significantly rust.Because the effect for reducing Bs and improving amorphous property is in a ratio of with Ti, Zr and Hf
About 1/2, B can be treated in TAM as B%/2.However, because B generates especially hard compound (example in sputter target material
Such as, boride), this cause need reduce machining in process velocity, therefore B preferably with the other elements for being categorized as TAM
Add together, rather than being individually added into.In consideration of it, (B/2)/TAM is preferably less than 0.8, more preferably less than 0.5.
Y, V, Cr, Mo and W are to cause Bs reductions and also cause that magnetization rises the element of somewhat rust.Y and V are additionally aided
The raising of noncrystalline.Nb and Ta be cause noncrystallineization improve and Bs reductions important element, and with rising magnetization
Become sharp effect.Mn, Al, Si, Ge and P are to cause Bs to reduce and cause that magnetization rises the element of somewhat rust.Ni and
Cu is the element for causing Bs to reduce on a small quantity, and Cu be when to add on a small quantity with the effect for making magnetization increase to become sharp but
It is that the element that magnetization rises somewhat is reduced when largely to add.
Because for about 1/3, Ni and Cu can be compared with the other elements of TAM and TNM are categorized as to show the reduction of Bs
Treated as Ni%/3 and Cu%/3 in TNM.Ga, Sn and Zn are to cause the Bs to reduce and with making magnetization when to add on a small quantity
Rising becomes sharp but magnetization is risen the element of the somewhat effect of rust when largely to add.As described above, all units
Element all has reduces the effect of Bs, and some elements have the effect for improving that amorphous property and influence magnetization rise.According to this
The alloy of invention is obtained by optimizing the addition of element.
TAM less than 5 causes amorphous property not enough, and being more than 25 TAM causes Bs low and Hbias is not enough.Therefore, TAM
It is more than 5 and less than 25, preferably more than 7 and less than 23, more preferably 9 less than 20.Because Nb and Ta are in sputter target material
In the intermetallic compound of fragility is generated with Fe and Co, when only addition Nb or/and Ta is used as TAM, it is necessary to reduce process velocity
To prevent rupture in machining and broken.In consideration of it, preferably, when only addition Nb or/and Ta is used as TAM
When, TAM is less than 20.
TAM+TNM less than 15 increases Bs, causes magnetization to rise rust, although Hbias increases.TAM+ more than 25
TNM causes Bs low and Hbias is low.Therefore, TAM+TNM is more than 15 and less than 25, preferably more than 17 and less than 23, more preferably 18
Above and less than 21.
(c) 0.25≤(Nb%+Ta%)/(TAM+TNM)≤1.00
Although Nb and Ta are that have the unit for making magnetization rise the bonus effect for becoming sharp in this alloy as described above
Element, but can not obtain this effect when (Nb%+Ta%)/(TAM+TNM) is less than 0.25.Because the addition of Nb and Ta
It is included in TAM, the upper limit of (Nb%+Ta%)/(TAM+TNM) is necessary for 1.00.Therefore, (Nb%+Ta%)/(TAM+TNM)
Be more than 0.25 and less than 1.00, preferably 0.40 less than 1.00, more preferably 0.60 less than 1.00.
(d) 0≤Ti%+Zr%+Hf%+B%/2≤5 and 0 ＜ Cu%+Sn%+Zn%+Ga%≤10
Because that Ti, Zr, Hf and B are the elements for making magnetization rise significantly rust in this alloy, so logical
Cross the upper limit for strictly limiting its total amount, there is provided sharper magnetization rises as extra effect.Work as Ti%+Zr%+Hf%+
When B%/2 are more than 5, it is impossible to which obtaining makes magnetization rise the effect for becoming sharp.Therefore, Ti%+Zr%+Hf%+B%/2 be 0 with
Upper and less than 5, preferably less than 3, more preferably 0.
Because that Cu, Sn, Zn and Ga are that have to make magnetization rise change when to add on a small quantity in this alloy
The element of sharp bonus effect is obtained, by actively adding these a small amount of elements, there is provided sharper magnetization rises.However,
When Cu%+Sn%+Zn%+Ga% is more than 10, it is impossible to obtain this effect.Therefore, Cu%+Sn%+Zn%+Ga% be more than
0 and less than 10, preferably more than 1 and less than 8, more preferably more than 2 and less than 6.Even if when any one in only meeting these formulas,
Also obtain makes magnetization rise the bonus effect for becoming sharp.
As described above, various elements have the influence and the influence to Bs risen to magnetization；Although its detailed reason is simultaneously
It is unclear but as follows by inference.It was observed that, the surface roughness of the sputtered film of non-retentive alloy is tended to influence magnetization rising right
In the acuity of the externally-applied magnetic field more than or equal to Hbias.It is believed that being attributed to the external magnetic field more than or equal to Hbias
Magnetize rise phenomenon in, the AFC in interface between soft magnetic film and Ru films couple can not resist big externally-applied magnetic field and
There is the reversion of magnetic flux；When there is jog on the rough surface of soft magnetic film and the interface between two kinds of films, first
The position of magnetic flux reversals and the slow position that magnetic flux reversals occur occur can jointly be existed local.
When in position as described above occur magnetic flux reversals behavior it is inconsistent when, over the entire film magnetization rise become
It is blunt.It is therefore contemplated that there is correlation between the surface roughness of sputtered film and the acuity of magnetization rising.Additionally, it is assumed that
Addition element may be influenceed to the surface roughness of sputtered film as the free volume and superfluous free volume of amorphous alloy
Influence.Both volumes all correspond to the volume in space between atom in amorphous alloy, and it is thought that work as these bodies
When product is big, atom is not assembled densely in the alloy, and in terms of the atom dimension level in sputtered film from the point of view of surface roughness
Therefore increase.
This shows that the stability of amorphous state may be relevant with both volumes；However, in the present invention, making magnetization
Ti, Zr, Hf and the B for rising significantly rust are the elements for making amorphous state particularly stable, and make magnetization when to add on a small quantity
It is the element for making amorphous character be deteriorated that rising becomes sharp Cu, Ga, Sn and Zn.Additionally, becoming quick as magnetization is risen
The Nb and Ta of sharp important element, are the elements of the promotion noncrystalline effect for having low when compared with Ti, Zr, Hf and B.
Embodiment
The present invention is explained in detail in referring to embodiment.
Prepared with the soft magnetic alloy powder constituted shown in table 1 by gas atomization.By the melting base material of 25kg
The induction melting in the Ar that depressurizes, alloy molten metal is flowed out from the nozzle of a diameter of 8mm, and high pressure of spraying immediately afterwards
Ar gas is being atomized.By powder classification for less than 500 μm and as the raw material powder that (hot isostatic press) is molded for HIP
End.Vacuum outgas can be carried out to it afterwards with the carbon steel tank that a diameter of 200mm of material powder filling and length are 10mm,
And seal to prepare the blank (billet) being molded for HIP.Will be filled with the blank of powder 1100 DEG C temperature,
HIP shapings under conditions of the pressure of 120MPa and the retention time of 2 hours.Afterwards, by molding prepare a diameter of 95mm and
Thickness is the non-retentive alloy sputter target material of 2mm.Soft magnetism is prepared using the sputter target material being made up of the non-retentive alloy
Film.Additionally, being used to prepare Ru films by the commercially available sputter target material that Ru metals are made.
The inside of chamber is evacuated to 1 × 10-4Below Pa, the Ar gas that purity is 99.99% is filled with 0.6Pa, and
Sputtered.First, the non-retentive alloy film (lower soft ferromagnetic layer) of 20nm is formed on the glass substrate of cleaning, thereon shape
Into the Ru films of 0.8nm, and non-retentive alloy film (the upper soft magnetism with above-mentioned film identical 20nm is further formed thereon
Layer), to prepare multilayer film.In all of embodiment and comparative example, in the upper soft magnetic film and lower soft magnetic film in multilayer film
Use identical alloy.Also it is prepared for only being formed wherein the individual layer of lower soft ferromagnetic layer, Bs, crystal for evaluating soft magnetic film
Structure and surface roughness.
The monofilm that will be prepared by this way be used as sample, and respectively using VSM (sample oscillating mode fluxmeter),
X-ray diffraction and AFM (AFM) evaluate Bs, crystal structure and arithmetic average roughness Ra (surface roughness).It is right
For crystal structure, amorphous state is evaluated as " good ", by the situation of the partially observable crystallite in amorphous state
It is evaluated as " general ", and is " poor " by evaluation of crystal.The acumen that Hbias and magnetization rise further is evaluated using multilayer film
Degree.These results are as shown in Table 2.
Fig. 1 is the schematic diagram of the magnetization curve of multilayer film.As shown in this figure, by when the magnetization of multilayer film rises
Externally-applied magnetic field evaluate Hbias, and magnetic saturation by multilayer film wherein externally-applied magnetic field (Hsat) and Hbias it
Between ratio, i.e. Hsat/Hbias come evaluate magnetization rise acuity.Fig. 1 (a) is shown in which that Hbias is high and magnetizes
Rise sharp embodiment, and Fig. 1 (b) is shown in which that Hbias is low and magnetizes the blunt embodiment of rising.In other words,
The value is low and is closer to the sharper magnetization rising of 1 expression.The value is be evaluated as " A " less than 1.2, the value be more than 1.2 and
" B " is be evaluated as less than 1.4, the value is be evaluated as " C " for 1.4 less than 1.8, and the value is evaluated for more than 1.8
It is " D ".
Table 2
As shown in Tables 1 and 2, the 1st to No. 28 is embodiments of the invention, and the 29th to No. 39 is comparative example.
Fig. 2 is such figure, wherein with the Hbias of multilayer film as the longitudinal axis and with the Bs of individual layer be transverse axis to the knot of table 2
Fruit is mapped.As shown in the solid oval of figure herein, find to obtain Hbias high, Bs high is required.In solid oval
Each data has Fe%/(Fe%+Co%) in the range of 0.5 to 0.9.By contrast, it is located under solid oval in Fig. 2
The 29th to No. 31 comparative example show the Bs suitable with the data in solid oval, but because Fe%/(Fe%+Co%) is small
Low Hbias values are shown in 0.5.In other words, 0.50 to 0.90 is adjusted to by by Fe%/(Fe%+Co%), even if
Relatively low Bs also obtain Hbias high.
By contrast, in fig. 2 the in dotted ellipse the 32nd to No. 36 comparative example of lower-left show substantially it is low
Bs and therefore also show low Hbias.Additionally, No. 39 comparative example have Fe%/(Fe%+Co%) as little as 0.4 and
Compositions of the TAM+TNM less than 15, i.e., the composition of Bs high, this is in the conventional technology common.It is right that solid oval is located in fig. 2
The cell of side shows this composition, in order to obtain the high Hbias suitable with the composition in solid oval, hence it is evident that Bs high is must
Need, and this composition causes usually said " fuzzy write-in ".
Fig. 3 be with the Hbias of multilayer film as the longitudinal axis and with the Ra of individual layer be transverse axis to obtained by the mapping of the result of table 2
Figure, marks according in the acuity being applied more than or the magnetization of multilayer film rises during external magnetic field equal to Hbias wherein in figure
And change.Thus graph discovery, even if in the case where multilayer film has equivalent Hbias, when the surface roughness (Ra) of individual layer
Gao Shi, magnetization rises variation.
Explain each comparative example data shown in table 2.Although the Bs with 0.80 to 0.86T, the 29th to No. 31 is compared
Example does not show Hbias high, because each Fe%/(Fe%+Co%) value is low.Because the 32nd and No. 33 comparative example shows
Too high Fe%/(Fe%+Co%) value is shown, the 34th and No. 35 comparative example shows TAM+TNM high, and No. 36 comparative example
TAM high and TAM+TNM high is shown, each comparative example shows substantially low Bs and do not show Hbias high.
No. 37 comparative example shows and the blunt magnetization of the external magnetic field more than Hbias is risen, although it is because aobvious
Low TAM+TNM is shown and Bs high and Hbias high is shown.No. 38 comparative example shows low TAM, is crystal, shows and is attributed to
The Ra high of the jog caused by crystal grain on monofilm surface, and show to the blunt of the external magnetic field more than Hbias
Magnetization rises.Although showing Bs substantially high, No. 39 comparative example because Fe%/(Fe%+Co%) value and TAM+TNM are low
The Hbias that level is equal to the level of each embodiment is only shown, and this composition with Bs substantially high causes to lead to
Often described " fuzzy write-in ".
Found compared with these comparative examples, the 1st to No. 28 embodiment has the Bs for being less than 1.1T, i.e., less than conventional art
Bs, but with Hbias high, because all embodiments are within the scope of the present invention, and further show to being more than
The sharp magnetization of the externally-applied magnetic field of Hbias rises.This composition realize to the patience in external noise magnetic field high be attributed to
Compatibility between the suppression of the fuzzy write-in of too high Bs.Compared with those in the 1st to No. 7 embodiment, because (Nb%+
Ta% in the range of 0.5 to 1.0, the 8th to No. 12 embodiment also shows the lower roughness of monofilm to)/(TAM+TNM)
And the bonus effect that rises of sharper magnetization (Ra).
Additionally, compared with those in the 1st to No. 7 embodiment because Ti%+Zr%+Hf%+B%/2 be less than 5 and/
Or Cu%+Sn%+Zn%+Ga% is more than 0 and no more than 10, the 13rd to No. 28 embodiment also shows the lower coarse of individual layer
The bonus effect that degree (Ra) and sharper magnetization rise.It was found that, because Ti%+Zr%+Hf%+B%/2 for less than 5 its
Hbias is highest in embodiment, and No. 23 embodiment rises with those magnetization being equal to the 1st to No. 7 embodiment.
As described above, the present invention shows following excellent effect：Can provide realize to the patience high of external magnetic field with
The soft magnetic film with low saturation flux density of the compatibility between the high record density of the suppression for being attributed to " fuzzy write-in "
Layer alloy and sputter target material, even if because the alloy also has Hbias high while having for steady in relatively low Bs
Determine the magnetized Bs minimum values of recording film, and further there is sharp magnetization to rise as extra effect.
Claims (6)
1. a kind of alloy for soft magnetic ribbon film layer in magnetic recording medium, wherein
The alloy comprising be selected from by Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Ni, Cu, Al, B, C, Si, P, Zn, Ga,
Ge and Sn composition group in one or more, and surplus Co and Fe；And
In terms of atom %, following formula (1) to (4) is met：
(1) 0.50≤Fe%/(Fe%+Co%)≤0.90；
(2)5≤TAM≤25；
(3)15≤TAM+TNM≤25；With
(4) (B/2)/TAM≤4/15,
Condition is that TAM and TNM are respectively：
TAM=Y%+Ti%+Zr%+Hf%+V%+Nb%+Ta%+B%/2；And
TNM=Cr%+Mo%+W%+Mn%+Ni%/3+Cu%/3+Al%+C%+Si%+P%+Zn%+Ga%+Ge%+
Sn%.
2. alloy according to claim 1, wherein meeting following formula (5)：
(5) 0.25≤(Nb%+Ta%)/(TAM+TNM)≤1.00.
3. the alloy according to claim 1 or claim 2, wherein meeting following formula (6) and/or (7)：
(6) 0≤Ti%+Zr%+Hf%+B%/2≤5
(7)0<Cu%+Sn%+Zn%+Ga%≤10.
4. alloy according to claim 1 and 2, wherein
The alloy is by selected from by Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Ni, Cu, Al, B, C, Si, P, Zn, Ga, Ge
Co and Fe with one or more in the group of Sn compositions, and surplus are constituted；And
In terms of atom %, following formula (1) to (4) is met：
(1) 0.50≤Fe%/(Fe%+Co%)≤0.90；
(2)5≤TAM≤25；
(3)15≤TAM+TNM≤25；With
(4) (B/2)/TAM≤4/15,
Condition is that TAM and TNM are respectively：
TAM=Y%+Ti%+Zr%+Hf%+V%+Nb%+Ta%+B%/2；And
TNM=Cr%+Mo%+W%+Mn%+Ni%/3+Cu%/3+Al%+C%+Si%+P%+Zn%+Ga%+Ge%+
Sn%.
5. alloy according to claim 1 and 2, wherein the alloy has is more than 0.5T and the saturation magnetic less than 1.1T
Flux density.
6. a kind of sputter target material, the sputter target material is used to manufacture comprising according to any one of claim 1 to 5
The soft magnetic film of alloy.
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| JP2012022096A JP5778052B2 (en) | 2012-02-03 | 2012-02-03 | Alloy for soft magnetic film layer having low saturation magnetic flux density used for magnetic recording medium and sputtering target material |
| JP2012-022096 | 2012-02-03 | ||
| PCT/JP2013/052400 WO2013115384A1 (en) | 2012-02-03 | 2013-02-01 | Alloy for soft magnetic film layers, which has low saturation magnetic flux density and is to be used in magnetic recording medium, and sputtering target material |
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| JP6116928B2 (en) * | 2013-02-18 | 2017-04-19 | 山陽特殊製鋼株式会社 | CoFe-based alloy and sputtering target material for soft magnetic film layer in perpendicular magnetic recording medium |
| JP6405261B2 (en) * | 2014-05-01 | 2018-10-17 | 山陽特殊製鋼株式会社 | Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium |
| TWI646208B (en) * | 2015-02-26 | 2019-01-01 | 光洋應用材料科技股份有限公司 | Amorphous soft-magnetic target and material |
| JP6442460B2 (en) * | 2016-10-27 | 2018-12-19 | 山陽特殊製鋼株式会社 | CoFe-based alloy and sputtering target material for soft magnetic film layer in perpendicular magnetic recording medium |
| JP6784733B2 (en) * | 2018-08-20 | 2020-11-11 | 山陽特殊製鋼株式会社 | Co-based alloy for soft magnetic layer of magnetic recording medium |
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| CN102149836A (en) * | 2008-07-14 | 2011-08-10 | 山阳特殊制钢株式会社 | Alloys for soft magnetic film layers in vertical magnetic recording media, sputtering target materials and manufacturing method therefore |
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| JP2009070444A (en) * | 2007-09-11 | 2009-04-02 | Hitachi Global Storage Technologies Netherlands Bv | Perpendicular magnetic recording medium |
| JP5397755B2 (en) * | 2008-06-17 | 2014-01-22 | 日立金属株式会社 | Fe-Co alloy sputtering target material for soft magnetic film formation |
| JP5425530B2 (en) * | 2009-06-10 | 2014-02-26 | 山陽特殊製鋼株式会社 | CoFeNi alloy and sputtering target material for soft magnetic film layer in perpendicular magnetic recording medium |
| JP5385018B2 (en) * | 2009-06-12 | 2014-01-08 | 山陽特殊製鋼株式会社 | Raw material powder for sputtering target material for producing soft magnetic film having high sputtering rate and sputtering target material |
| JP2011181140A (en) * | 2010-03-01 | 2011-09-15 | Hitachi Metals Ltd | Fe-Co BASED ALLOY SOFT MAGNETIC FILM FOR MAGNETIC RECORDING MEDIUM |
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| CN104081455A (en) | 2014-10-01 |
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