CN104067517B - 利用双向晶体管进行超声控制的方法和系统 - Google Patents

利用双向晶体管进行超声控制的方法和系统 Download PDF

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Publication number
CN104067517B
CN104067517B CN201380006494.8A CN201380006494A CN104067517B CN 104067517 B CN104067517 B CN 104067517B CN 201380006494 A CN201380006494 A CN 201380006494A CN 104067517 B CN104067517 B CN 104067517B
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China
Prior art keywords
transistor
bidirectional
ultrasound
coupled
doped region
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Chinese (zh)
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CN104067517A (zh
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M·E·内尔森
R·D·佐丹格
I·H·欧弗曼
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Texas Instruments Inc
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Texas Instruments Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0207—Driving circuits
    • B06B1/0215—Driving circuits for generating pulses, e.g. bursts of oscillations, envelopes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Electronic Switches (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
CN201380006494.8A 2012-01-24 2013-01-24 利用双向晶体管进行超声控制的方法和系统 Active CN104067517B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/357,593 US9669427B2 (en) 2012-01-24 2012-01-24 Methods and systems for ultrasound control with bi-directional transistor
US13/357,593 2012-01-24
PCT/US2013/022861 WO2013112668A1 (en) 2012-01-24 2013-01-24 Methods and systems for ultrasound control with bidirectional transistor

Publications (2)

Publication Number Publication Date
CN104067517A CN104067517A (zh) 2014-09-24
CN104067517B true CN104067517B (zh) 2017-12-22

Family

ID=48797088

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380006494.8A Active CN104067517B (zh) 2012-01-24 2013-01-24 利用双向晶体管进行超声控制的方法和系统

Country Status (4)

Country Link
US (1) US9669427B2 (https=)
JP (2) JP6177256B2 (https=)
CN (1) CN104067517B (https=)
WO (1) WO2013112668A1 (https=)

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US9251781B1 (en) 2015-04-06 2016-02-02 King Saud University Pulser logic method and system for an ultrasound beamformer
US10488516B2 (en) * 2015-10-21 2019-11-26 Semiconductor Components Industries, Llc Controlling an output signal independently of the first harmonic
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US10082565B2 (en) * 2016-03-31 2018-09-25 Butterfly Network, Inc. Multilevel bipolar pulser
US11154279B2 (en) * 2016-03-31 2021-10-26 Bfly Operations, Inc. Transmit generator for controlling a multilevel pulser of an ultrasound device, and related methods and apparatus
US10859687B2 (en) 2016-03-31 2020-12-08 Butterfly Network, Inc. Serial interface for parameter transfer in an ultrasound device
CN108737940B (zh) * 2018-04-24 2020-03-27 深圳市编际智能科技有限公司 一种高指向性特种扬声器扩声系统
US20210068843A1 (en) 2018-05-10 2021-03-11 Techno Science Co., Ltd. Hemostasis aid and tourniquet
US20230350040A1 (en) * 2022-04-08 2023-11-02 Elmos Semiconductor Se Device for controlling an ultrasonic transducer and ultrasonic measuring device having such a control device for the ultrasonic transducer

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CN102135785A (zh) * 2010-01-22 2011-07-27 罗伯特·博世有限公司 用于产生电流脉冲的装置和方法

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US6956426B2 (en) * 2003-03-06 2005-10-18 General Electric Company Integrated high-voltage switching circuit for ultrasound transducer array
US6813181B1 (en) * 2003-05-27 2004-11-02 Infineon Technologies Ag Circuit configuration for a current switch of a bit/word line of a MRAM device
US20110063011A1 (en) * 2009-09-14 2011-03-17 Analog Devices, Inc. Apparatus and method for transmit/receive switching
CN102135785A (zh) * 2010-01-22 2011-07-27 罗伯特·博世有限公司 用于产生电流脉冲的装置和方法

Also Published As

Publication number Publication date
US9669427B2 (en) 2017-06-06
US20130188457A1 (en) 2013-07-25
JP2017113581A (ja) 2017-06-29
JP6306757B2 (ja) 2018-04-04
JP6177256B2 (ja) 2017-08-09
WO2013112668A1 (en) 2013-08-01
JP2015506244A (ja) 2015-03-02
CN104067517A (zh) 2014-09-24

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