CN104064670A - 压电薄膜元件、压电传感器和振动发电机 - Google Patents
压电薄膜元件、压电传感器和振动发电机 Download PDFInfo
- Publication number
- CN104064670A CN104064670A CN201410101620.4A CN201410101620A CN104064670A CN 104064670 A CN104064670 A CN 104064670A CN 201410101620 A CN201410101620 A CN 201410101620A CN 104064670 A CN104064670 A CN 104064670A
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- CN
- China
- Prior art keywords
- piezoelectric
- thin film
- piezoelectric thin
- film layer
- type element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 230000005684 electric field Effects 0.000 claims abstract description 40
- 230000010287 polarization Effects 0.000 claims abstract description 20
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000006073 displacement reaction Methods 0.000 claims description 43
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- 230000006835 compression Effects 0.000 claims description 2
- 238000007906 compression Methods 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 35
- 238000000034 method Methods 0.000 description 13
- 239000011230 binding agent Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-056521 | 2013-03-19 | ||
JP2013056521 | 2013-03-19 | ||
JP2014-009043 | 2014-01-22 | ||
JP2014009043A JP6266987B2 (ja) | 2013-03-19 | 2014-01-22 | 圧電薄膜素子、圧電センサ及び振動発電機 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104064670A true CN104064670A (zh) | 2014-09-24 |
CN104064670B CN104064670B (zh) | 2018-05-01 |
Family
ID=51552293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410101620.4A Active CN104064670B (zh) | 2013-03-19 | 2014-03-18 | 压电薄膜元件、压电传感器和振动发电机 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9620703B2 (zh) |
JP (1) | JP6266987B2 (zh) |
CN (1) | CN104064670B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108152337A (zh) * | 2017-12-19 | 2018-06-12 | 太原理工大学 | 一种高气敏性能的LaFeO3基乙醇气体传感器及其制备方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6266291B2 (ja) * | 2013-10-02 | 2018-01-24 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | ニオブ酸系強誘電体の配向性薄膜とその作製方法 |
JP6910290B2 (ja) * | 2015-04-17 | 2021-07-28 | 太陽誘電株式会社 | 振動波形センサ及び波形解析装置 |
JP6239566B2 (ja) * | 2015-10-16 | 2017-11-29 | 株式会社サイオクス | 圧電薄膜付き積層基板、圧電薄膜素子およびその製造方法 |
JP7201603B2 (ja) * | 2017-09-12 | 2023-01-10 | 日本碍子株式会社 | 圧電素子の製造方法 |
JP6804615B2 (ja) * | 2019-10-21 | 2020-12-23 | 住友化学株式会社 | 圧電膜を有する積層基板、圧電膜を有する素子および圧電膜を有する積層基板の製造方法 |
Citations (6)
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CN101080372A (zh) * | 2004-12-22 | 2007-11-28 | 株式会社村田制作所 | 压电陶瓷组合物和压电驱动器 |
JP2008127244A (ja) * | 2006-11-21 | 2008-06-05 | Hitachi Cable Ltd | 圧電セラミックス及び圧電セラミックス素子 |
US20090189490A1 (en) * | 2008-01-24 | 2009-07-30 | Hitachi Cable, Ltd. | Piezoelectric Thin Film Device |
US20090236944A1 (en) * | 2006-12-22 | 2009-09-24 | Hitachi Cable, Ltd. | Piezoelectric thin film element, and an actuator and a sensor fabricated by using the same |
US20110187237A1 (en) * | 2010-02-02 | 2011-08-04 | Hitachi Cable, Ltd. | Piezoelectric film element, and manufacturing method of the same and piezoelectric film device |
CN102804436A (zh) * | 2010-03-25 | 2012-11-28 | 日立电线株式会社 | 压电薄膜器件和压电薄膜装置 |
Family Cites Families (14)
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---|---|---|---|---|
JP2999703B2 (ja) * | 1995-12-20 | 2000-01-17 | 沖電気工業株式会社 | 強誘電体薄膜、その形成方法、薄膜形成用塗布液 |
JP4735840B2 (ja) | 2005-12-06 | 2011-07-27 | セイコーエプソン株式会社 | 圧電体積層体、表面弾性波素子、薄膜圧電共振子および圧電アクチュエータ |
JP4091641B2 (ja) * | 2006-04-07 | 2008-05-28 | 富士フイルム株式会社 | 圧電素子とその製造方法、及びインクジェット式記録ヘッド |
JP2008218547A (ja) * | 2007-03-01 | 2008-09-18 | Fujifilm Corp | 圧電体とその駆動方法、圧電素子、及び液体吐出装置 |
US20080239016A1 (en) * | 2007-03-26 | 2008-10-02 | Canon Kabushiki Kaisha | Liquid discharge head and liquid discharge apparatus |
JP5253894B2 (ja) * | 2007-06-08 | 2013-07-31 | 富士フイルム株式会社 | 強誘電体膜、圧電素子、及び液体吐出装置 |
US8022604B2 (en) * | 2007-10-19 | 2011-09-20 | Ngk Insulators, Ltd. | (Li, Na, K)(Nb, Ta)O3 type piezoelectric/electrostrictive ceramic composition containing 30-50 mol% Ta and piezoelectric/electrorestrictive device containing the same |
JP5525143B2 (ja) * | 2008-06-05 | 2014-06-18 | 日立金属株式会社 | 圧電薄膜素子及び圧電薄膜デバイス |
US8222798B2 (en) * | 2008-09-26 | 2012-07-17 | Samsung Electro-Mechanics Co., Ltd. | Piezoelectric resonator and electrode structure thereof |
JP4438893B1 (ja) * | 2009-02-04 | 2010-03-24 | 富士フイルム株式会社 | 圧電体とその製造方法、圧電素子、及び液体吐出装置 |
JP2010201830A (ja) * | 2009-03-04 | 2010-09-16 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
JP5471612B2 (ja) * | 2009-06-22 | 2014-04-16 | 日立金属株式会社 | 圧電性薄膜素子の製造方法及び圧電薄膜デバイスの製造方法 |
JP4767369B1 (ja) * | 2010-01-07 | 2011-09-07 | パナソニック株式会社 | 圧電発電素子および圧電発電素子を用いた発電方法 |
WO2012141104A1 (ja) * | 2011-04-14 | 2012-10-18 | 株式会社村田製作所 | 強誘電体薄膜およびその製造方法 |
-
2014
- 2014-01-22 JP JP2014009043A patent/JP6266987B2/ja active Active
- 2014-03-14 US US14/212,821 patent/US9620703B2/en active Active
- 2014-03-18 CN CN201410101620.4A patent/CN104064670B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101080372A (zh) * | 2004-12-22 | 2007-11-28 | 株式会社村田制作所 | 压电陶瓷组合物和压电驱动器 |
JP2008127244A (ja) * | 2006-11-21 | 2008-06-05 | Hitachi Cable Ltd | 圧電セラミックス及び圧電セラミックス素子 |
US20090236944A1 (en) * | 2006-12-22 | 2009-09-24 | Hitachi Cable, Ltd. | Piezoelectric thin film element, and an actuator and a sensor fabricated by using the same |
US20090189490A1 (en) * | 2008-01-24 | 2009-07-30 | Hitachi Cable, Ltd. | Piezoelectric Thin Film Device |
US20110187237A1 (en) * | 2010-02-02 | 2011-08-04 | Hitachi Cable, Ltd. | Piezoelectric film element, and manufacturing method of the same and piezoelectric film device |
CN102804436A (zh) * | 2010-03-25 | 2012-11-28 | 日立电线株式会社 | 压电薄膜器件和压电薄膜装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108152337A (zh) * | 2017-12-19 | 2018-06-12 | 太原理工大学 | 一种高气敏性能的LaFeO3基乙醇气体传感器及其制备方法 |
CN108152337B (zh) * | 2017-12-19 | 2020-06-02 | 太原理工大学 | 一种高气敏性能的LaFeO3基乙醇气体传感器及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104064670B (zh) | 2018-05-01 |
US9620703B2 (en) | 2017-04-11 |
JP6266987B2 (ja) | 2018-01-24 |
US20140285068A1 (en) | 2014-09-25 |
JP2014207429A (ja) | 2014-10-30 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SCIOCS COMPANY LIMITED Free format text: FORMER OWNER: HITACHI METALS, LTD. Effective date: 20150814 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150814 Address after: Ibaraki Applicant after: Hitachi Cable Address before: Tokyo, Japan, Japan Applicant before: Hitachi Metals Co., Ltd. |
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C10 | Entry into substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160303 Address after: Tokyo, Japan, Japan Applicant after: Sumitomo Chemical Co., Ltd. Address before: Ibaraki Applicant before: Hitachi Cable |
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