CN104037091A - 电连接件及其形成方法 - Google Patents

电连接件及其形成方法 Download PDF

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Publication number
CN104037091A
CN104037091A CN201310300897.5A CN201310300897A CN104037091A CN 104037091 A CN104037091 A CN 104037091A CN 201310300897 A CN201310300897 A CN 201310300897A CN 104037091 A CN104037091 A CN 104037091A
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China
Prior art keywords
photoresist
approximately
electrical connector
described photoresist
layer
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CN201310300897.5A
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CN104037091B (zh
Inventor
王俊杰
郭宏瑞
刘重希
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明公开了一种方法，包括：在凸块下金属（UBM）层上方涂覆光刻胶以及曝光光刻胶。在曝光步骤中，到达光刻胶的底部的光量小于到达光刻胶的顶面的光量的约5%。该方法进一步包括显影光刻胶以在光刻胶中形成开口。通过开口暴露UBM层的一部分。开口的底部横向尺寸大于顶部横向尺寸。在开口中形成电连接件，其中电连接件是不可回流的。本发明还提供了电连接件及其形成方法。

Description

电连接件及其形成方法
技术领域
本发明一般地涉及半导体领域，更具体地来说，涉及电连接件及其形成方法。
背景技术
在形成半导体晶圆的过程中，首先在半导体衬底的表面形成诸如晶体管的集成电路器件。然后在集成电路器件的上方形成互连结构。在半导体芯片的表面上形成金属凸块，使得集成电路器件可被接入。
在典型的金属凸块形成工艺中，首先形成凸块下金属（UBM）层。然后，例如通过镀在UBM层上形成金属凸块。形成工艺包括形成掩模以覆盖UBM层的第一部分，而不覆盖UBM层的第二部分。将金属凸块镀在UBM层的第二部分上。在形成金属凸块之后，去除UBM层的第一部分。
发明内容
为了解决现有技术中所存在的缺陷，根据本发明的一方面，提供了一种方法，包括：在凸块下金属（UBM）层上方涂覆光刻胶；曝光所述光刻胶，其中在所述曝光步骤中，到达所述光刻胶的底部的光量小于到达所述光刻胶的顶面的光量的约5%；显影所述光刻胶以在所述光刻胶中形成开口，其中通过所述开口暴露所述UBM层的一部分，并且所述开口的底部横向尺寸大于顶部横向尺寸；以及在所述开口中形成电连接件，所述电连接件是不可回流的。
在该方法中，所述光刻胶是负性光刻胶，并且在显影所述光刻胶的步骤中，去除所述光刻胶的未曝光部分。
在该方法中，在曝光步骤中，到达所述光刻胶的底部的光量在到达所述光刻胶的顶面的光量的约0.5%和约5%之间。
在该方法中，在曝光步骤中，到达所述光刻胶的底部的光量小于到达所述光刻胶的顶面的光量的约2%。
该方法进一步包括在形成所述电连接件的步骤之后，去除所述光刻胶；以及在去除所述光刻胶的步骤之后，去除暴露的所述UBM层的部分。
在该方法中，所述底部横向尺寸和所述顶部横向尺寸之间的差值大于约4μm。
在该方法中，底部尺寸和顶部尺寸具有差值，金属凸块具有高度，其中所述差值的一半与所述高度的比值大于约0.06。
根据本发明的另一方面，提供了一种方法，包括：在凸块下金属（UBM）层的上方涂覆光刻胶；使用光刻掩模曝光所述光刻胶；显影所述光刻胶以去除所述光刻胶的未曝光部分，从而在所述光刻胶中形成开口，其中所述光刻胶包括感光化合物（PAC），并且在显影步骤之后保留所述光刻胶的已曝光部分；在所述开口中镀电连接件，所述电连接件的底部横向尺寸大于顶部横向尺寸；在镀步骤之后，去除所述光刻胶；以及在去除所述光刻胶的步骤之后，去除暴露的所述UBM层的部分。
在该方法中，所述底部横向尺寸和所述顶部横向尺寸之间的差值大于约4μm。
在该方法中，所述电连接件具有高度，并且所述差值的一半与所述高度的比值大于约0.06。
在该方法中，所述电连接件包括非焊料材料，并且所述方法进一步包括将包含所述电连接件的晶圆切割为分离的管芯，并且在切割步骤之后，所述电连接件的底部横向尺寸仍大于所述顶部横向尺寸。
在该方法中，所述PAC的重量百分比小于约1%。
在该方法中，在曝光步骤之后，到达所述光刻胶的底部的光强度小于所述光刻胶的顶面所接收的光强度的约5%。
在该方法中，所述电连接件包括焊料层，并且所述方法进一步包括回流所述焊料层。
根据本发明的又一方面，提供了一种方法，包括：在凸块下金属（UBM）层的上方涂覆光刻胶，其中所述光刻胶包括感光化合物（PAC）；使用光刻掩模曝光所述光刻胶，其中所述光刻胶吸收用于曝光的光，并且所述光刻胶的底面处的光的第一光强度与所述光刻胶的顶面处的光的第二光强度的比小约0.05；显影所述光刻胶以去除所述光刻胶的未曝光部分，从而在所述光刻胶中形成开口；在所述开口中镀电连接件，其中所述电连接件包括非焊料材料；在镀步骤之后，去除所述光刻胶；以及在去除所述光刻胶的步骤之后，去除暴露的所述UBM层的部分。
在该方法中，所述开口具有顶部横向尺寸和底部横向尺寸，并且所述底部横向尺寸比所述顶部横向尺寸大约4μm。
在该方法中，所述光刻胶的厚度在约30μm和约60μm之间。
在该方法中，金属凸块具有铃形的截面，所述金属凸块的底部的倾斜度大于所述金属凸块的顶部的倾斜度。
在该方法中，所述光刻胶包括：聚合物，其重量百分比小于约40%；溶剂，其重量百分比小于约35%；交联剂，其重量百分比小于约20%；以及PAC，其重量百分比小于约5%。
附图说明
为了更完整地理解实施例及其优点，现在结合附图进行的以下描述作为参考，其中：
图1至图7是根据一些实施例的制造电连接件的中间阶段的截面图；
图8示出了根据各个实施例的电连接件，其中电连接件具有不同的轮廓；以及
图9A、图9B和图9C示出了根据各个实施例的电连接件的俯视图，其中电连接件具有不同的形状。
具体实施方式
以下详细论述本发明实施例的制造和使用。然而，应该理解，实施例提供了许多可在各种具体环境中实现的可应用发明构思。所论述的实施例是示例性的，并不限制本发明的范围。
根据各个实施例提供了一种用于形成电路的电连接件的方法。示出了根据实施例制造电连接件的中间阶段。讨论了实施例的变形。在各个视图和示例性实施例中，相似的参考标号用于表示相似的元件。在所示的实施例中，示出器件晶圆（或中介晶圆或封装衬底）作为一个实例来解释本发明实施例的构思。应该理解，实施例的构思可应用于任何其他集成电路部件，其中使用例如用于接合目的的电连接件。
参照图1，提供了包括衬底30的晶圆20。在一些实施例中，衬底30是诸如硅衬底的半导体衬底，但是其可由诸如硅锗、碳化硅、砷化镓等的其他半导体材料形成。可在衬底30的表面上形成半导体器件32，其可包括晶体管、二极管、电阻器等。在衬底30的上方形成互连结构34，互连结构34包括形成在其中的金属线和通孔（未示出）并且电连接至半导体器件32。金属线和通孔可由铜或铜合金形成，并且可使用镶嵌工艺形成。在可选实施例中，部件20是中介晶圆或封装衬底带，并且基本上没有有源器件（包括晶体管）和无源器件（诸如电阻器、电容器和/或电感器等）。在这些实施例中，衬底30可由半导体材料或介电材料形成。
互连结构34包括介电层38以及形成在介电层38中的金属线35和通孔36。介电层38可包括层间电介质（ILD）和金属间电介质（IMD）。在一些实施例中，介电层38由低k介电材料形成。例如，低k介电材料的介电常数（k值）可小于约2.8或者小于约2.5。金属线35和通孔（或接触插塞）36可由铜、铜合金、钨或其他含金属的导电材料形成。可使用单镶嵌和/或双镶嵌工艺形成金属线35和通孔36。
在互连结构34的上方形成金属焊盘40。金属焊盘40可以是铝焊盘或铝-铜焊盘。金属焊盘40可通过互连结构34中的金属线35和通孔/接触插塞36电连接至下面的器件32。
形成钝化层42以覆盖金属焊盘40的边缘部分。通过钝化层42中的开口暴露金属焊盘40的中心部分。钝化层42可由非多孔材料形成。在一些实施例中，钝化层42是包括氧化硅层（未示出）和位于氧化硅层上方的氮化硅层（未示出）的复合层。在可选实施例中，钝化层42包括无掺杂硅酸盐玻璃（USG）和/或氮氧化硅等。虽然示出了一个钝化层42，但可以有多个钝化层。
在钝化层的上方形成聚合物层46。聚合物层46可包括诸如聚酰亚胺、苯并环丁烯（BCB）、聚苯并恶唑（PBO）等的聚合物。图案化聚合物层46以形成开口，通过该开口暴露金属焊盘的中间部分。
参照图2，形成凸块下金属（UBM）层48。在一些实施例中，UBM层48包括阻挡层48A和位于阻挡层48A上方的晶种层48B。阻挡层48A延伸至钝化层42的开口中，并且阻挡层48A电连接至金属焊盘40且可与该金属焊盘物理接触。阻挡层48A可以是钛层、氮化钛层、钽层、氮化钽层或由钛合金或钽合金形成的层。晶种层48B的材料可包括铜或铜合金，因此晶种层48B在下文中可选地称为铜晶种层。然而，晶种层的材料还可包括诸如银、金、铝、钯、镍、镍合金、钨合金、铬、铬合金的其他金属和它们的组合。在一些实施例中，使用物理汽相沉积（PVD）或其他合适的方法形成阻挡层48A和晶种层48B。阻挡层48A可具有介于约500和约2000之间的厚度。晶种层48B可具有介于约1000和约10000之间的厚度，但是可使用不同的厚度。
图3示出了光刻胶50的涂层，以及使用光刻掩模52对光刻胶50曝光。光刻掩模52包括允许光54穿过的透明图案52A；以及用于阻挡光54的不透明部分52B。光刻胶50可具有厚度T1，其在约30μm和约60μm之间。然而，应该理解，说明书中列举的值仅仅是实例，并且可更改为不同的值。光刻胶50可包括聚合物、溶剂、交联剂和感光化合物（PAC）。在一些示例性实施例中，聚合物的材料包括丙烯酸树脂、酚醛树脂等。在一些示例性实施例中，溶剂的材料可包括丙二醇甲醚醋酸酯（PGMEA）。
在一些示例性实施例中，光刻胶50中的聚合物的重量百分比小于约40%。光刻胶50中的溶剂的重量百分比小于约35%。光刻胶50中的交联剂的重量百分比小于约20%。光刻胶50中的PAC的重量百分比小于约5%，并且可在约1%和约5%之间。PAC可均匀分布在光刻胶50中，例如光刻胶50的顶部中的PAC百分比等于光刻胶50的底部中的PAC百分比。在一些实施例中，由所选择的PAC导致得到的光刻胶50的透光率可小于约3。
如图3所示，使用光54曝光光刻胶50。光刻掩模部分52B阻止光54到达下面的光刻胶50的部分。光刻掩模部分52A允许光54穿透并且到达下面的光刻胶50的部分。由于光刻胶50的透光率小于常用的PAC的透光率，所以光刻胶50中的PAC吸收光54。因此，当光54向下经过光刻胶50时光54的量逐渐减小。因此，光刻胶50的下部接收的光54的量小于光刻胶50的上部接收的光54的量。光刻胶50中绘制的箭头54表示光的量的减少，其中从光刻胶50的顶部到底部箭头54的宽度越来越小。PAC的材料部分地决定了PAC能够吸收的光的波长，并且决定了相应的吸收率。根据一些实施例，选择PAC的材料以匹配光54的波长，从而达到合适的吸收率，反之亦然。如果光刻胶50的顶面50A处的光54的光强度为LIGI1，并且光刻胶50的底面50B处的光54的光强度为LIGI2，则比值LIGI2/LIGI1小于约0.05（即5%），并且可以小于约0.02。在一些示例性实施例中，比值LIGI2/LIGI1还可以在约0.005（0.5%）和约0.05之间。
参照图4，在曝光之后，显影光刻胶50。因此在光刻胶50中形成开口56，其中通过开口56暴露UBM层48的一部分。然后实施预处理（清除浮渣）工艺以去除光刻胶50的已去除部分的任何残留物（其位于开口56中）。例如，可使用氧等离子体（O2）执行预处理步骤。在一些实施例中，光刻胶50是负性光刻胶，并且保留已曝光部分，而去除未曝光部分（以及没有接收充分曝光的光刻胶50的部分），其中未曝光部分位于图3中的虚线53之间。由于当光54向下经过光刻胶50时光强度逐渐减小，所以图3中的虚线53是倾斜的。
再次参照图4，开口56具有楔形轮廓，并且底部横向尺寸D1大于顶部横向尺寸D2。在相同的截面图中测量底部横向尺寸D1和顶部横向尺寸D2，并且根据开口56的俯视图形状，底部横向尺寸和顶部横向尺寸可以是长度、宽度、直径等。在一些实施例中，差值（D1－D2）大于约4μm，并且可在约4μm和约20μm之间。然而，差值（D1－D2）可更大（例如，高达约54μm或更高）或更小（例如，在约1μm和约4μm之间）。实验表明差值（D1－D2）与光刻胶50中PAC的量有关。例如，增加光刻胶50中的PAC的量可使差值（D1－D2）增大，而减少光刻胶50中的PAC的量使得差值（D1－D2）减小。减少光刻胶50中的PAC的量意味着增大了光刻胶50的透光率，从而使得更多的光54的量可到达光刻胶50的底部，而增加光刻胶50中的PAC的量意味着减小了光刻胶50的透光率，从而使得更少的光54的量可到达光刻胶50的底部。
此外，实验表明尺寸差值（D1－D2）还与光54的曝光量有关。曝光量受到光强度和曝光时间的影响。减少曝光量可使光刻胶50的更多的底部部分曝光不充分，因此使得差值（D1－D2）增大。相反，增加光54的曝光量使得差值（D1－D2）减小。例如，在一个实验中，通过将曝光量从1000mJoule/cm2减少至400mJoule/cm2，差值（D1－D2）从17μm增大至54μm。当曝光量足够高时，底部横向尺寸D1可基本上等于顶部尺寸D2。因此，可以控制曝光量来得到楔形开口56。
接下来，还如图5所示，形成电连接件58。电连接件58可以是金属凸块，因而其在下文中被称为金属凸块58。此外，金属凸块58可由不可回流材料形成，该不可回流材料不能在回流焊料的温度下回流，因此金属凸块58还是非焊料凸块。在一些实施例中，执行电镀的步骤以在UBM层48上和开口56中形成金属凸块58。电镀可以是电解镀、化学镀、浸镀等。在一些示例性实施例中，金属凸块58包括凸块部分58A，该凸块部分其由于高熔解温度而不能被回流，并且金属凸块58可以是铜柱。可在凸块部分58A的上方形成其他部分（示出为层58B）。在一些实施例中，其他部分58B选自由镍层、镍合金、钯层、金层、银层和它们的组合所组成的组。在一些实施例中，在金属凸块58的上方电镀焊料层59，并且焊料层59可包括Sn-Ag合金、Sn-Cu合金、Sn-Ag-Cu合金等，并且焊料层59可以是无铅的或含铅的。在可选实施例中，并不形成焊料层59。金属凸块58的侧壁具有与开口56的侧壁相同的轮廓轮廓，因此金属凸块58的底部尺寸D1也大于金属凸块58的顶部尺寸D2’。
接下来，例如用灰化工艺去除光刻胶50。图6示出了得到的结构。作为去除光刻胶50的结果，暴露了UBM层48的部分。接下来，如图7所示，蚀刻UBM层48的暴露部分。保留被金属凸块58覆盖的UBM层48的一部分，该部分在下文中被称为UBM48’。可使用湿蚀刻步骤、干蚀刻步骤等执行UBM层48的蚀刻。在包括焊料层59的实施例中，可执行回流步骤以回流焊料层59。接下来，可将晶圆20切割为管芯，表示为分离的管芯100。金属凸块58可用于将管芯100接合至其他封装部件（未示出），封装部件可以是中介片、封装衬底、印刷电路板等。
如图7所示，金属凸块58可具有高度H。比值（（D1－D2）/2）/H（即（D1－D2）/2H）反映了金属凸块58的侧壁的倾斜度。在一些实施例中，比值（D1－D2）/2H大于约0.06，并且可在约0.06和约0.3之间，并且进一步可在约0.2和0.3之间。
图8示出了金属凸块58的多个可能的轮廓，其中线60A、60B和60C是金属凸块58的侧壁的可能形状和轮廓。例如，如线60A所示，金属凸块58的截面图为铃形，其中顶部的倾斜度小于底部的倾斜度。在底部，金属凸块58的侧壁可具有倾斜角为α的部分，其中α小于约60度、小于约45度、或者小于约30度。线60B和60C的倾斜度逐渐小于线60A的倾斜度。可通过选择合适的PAC、调节PAC的量、调节用于曝光的光的波长（见图3）以及调节曝光量来调节金属凸块58的轮廓。线60A、60B和60C从顶部到底部平滑地过渡，在线60A、60B和60C中任意一条线的任何部分之间没有突然转变。
图9A、9B和9C示出了根据各个示例性实施例的金属凸块58的俯视图。图9A、9B和9C中的每幅图都示出了内部形状和外部形状，其中内部形状是金属凸块58的顶面的俯视图形状，并且外部形状是金属凸块58的底面的俯视图形状。在俯视图中，金属凸块58可具有圆形（图9A）、椭圆形（图9B）、矩形（未示出）、六边形（图9C，或其他多边形）或任何其他的形状。示出了底部尺寸D1和顶部尺寸D2。
根据本发明的示例性实施例，通过选择用于形成金属凸块的光刻胶中的合适的PAC、用于曝光光刻胶的合适的波长和/或用于曝光光刻胶的合适的光量，金属凸块的底部尺寸可大于相应的顶部尺寸。由于底部尺寸较大，减小了通过金属凸块施加至下面的低k介电层的应力，并且可减小低k电介质层压。由于顶部尺寸较小，用于接合的焊料区（其中形成的焊料区连接至金属凸块58）可具有较小的尺寸。因此，减少了焊料桥接。
根据实施例，一种方法包括在UBM层上方涂覆光刻胶以及曝光光刻胶。在曝光步骤中，到达光刻胶的底部的光的量小于到达光刻胶的顶面的光的量的约3%。该方法进一步包括显影光刻胶以在光刻胶中形成开口。通过开口暴露UBM层的一部分。开口的底部横向尺寸大于顶部横向尺寸。在开口中形成电连接件，电连接件是不可回流的。
根据其他实施例，一种方法包括：在UBM层上方涂覆光刻胶，使用光刻掩模曝光光刻胶以及显影光刻胶以去除光刻胶的未曝光部分从而在光刻胶中形成开口，其中在显影步骤之后保留光刻胶的已曝光部分。在开口中镀电连接件，其中电连接件的底部横向尺寸大于顶部横向尺寸。在镀步骤之后，去除光刻胶。在去除光刻胶的步骤之后，也去除暴露的UBM层的部分。
根据又一些其他实施例，一种方法包括在UBM层上方涂覆光刻胶，其中光刻胶包括PAC。光刻胶吸收用于曝光的光，其中光刻胶底面处的光的第一光强度与光刻胶顶面处的光的第二光强度的比小于约0.05。使用光刻掩模在曝光步骤中曝光光刻胶。显影光刻胶以去除光刻胶的未曝光部分从而在光刻胶中形成开口。在开口中镀电连接件。在镀步骤之后，去除光刻胶。在去除光刻胶的步骤之后，去除暴露的UBM层的部分。
尽管已经详细地描述了实施例及其优势，但应该理解，可以在不背离所附权利要求限定的实施例的构思和范围的情况下，进行各种改变、替换和更改。而且，本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本领域普通技术人员根据本发明应很容易理解，根据本发明可以利用现有的或今后开发的用于执行与本文所述相应实施例基本上相同的功能或者获得基本上相同的结果的工艺、机器、制造、材料组分、装置、方法或步骤。因此，所附权利要求预期在其范围内包括这样的工艺、机器、制造、材料组分、装置、方法或步骤。此外，每条权利要求构成单独的实施例，并且多个权利要求和实施例的组合在本发明的范围内。

Claims (10)

1.一种方法，包括：
在凸块下金属（UBM）层上方涂覆光刻胶；
曝光所述光刻胶，其中在所述曝光步骤中，到达所述光刻胶的底部的光量小于到达所述光刻胶的顶面的光量的约5%；
显影所述光刻胶以在所述光刻胶中形成开口，其中通过所述开口暴露所述UBM层的一部分，并且所述开口的底部横向尺寸大于顶部横向尺寸；以及
在所述开口中形成电连接件，所述电连接件是不可回流的。
2.根据权利要求1所述的方法，其中，所述光刻胶是负性光刻胶，并且在显影所述光刻胶的步骤中，去除所述光刻胶的未曝光部分。
3.根据权利要求1所述的方法，其中，在曝光步骤中，到达所述光刻胶的底部的光量在到达所述光刻胶的顶面的光量的约0.5%和约5%之间；或者
在曝光步骤中，到达所述光刻胶的底部的光量小于到达所述光刻胶的顶面的光量的约2%；或者
所述底部横向尺寸和所述顶部横向尺寸之间的差值大于约4μm；或者
底部尺寸和顶部尺寸具有差值，金属凸块具有高度，其中所述差值的一半与所述高度的比值大于约0.06。
4.根据权利要求1所述的方法，进一步包括：
在形成所述电连接件的步骤之后，去除所述光刻胶；以及
在去除所述光刻胶的步骤之后，去除暴露的所述UBM层的部分。
5.一种方法，包括：
在凸块下金属（UBM）层的上方涂覆光刻胶；
使用光刻掩模曝光所述光刻胶；
显影所述光刻胶以去除所述光刻胶的未曝光部分，从而在所述光刻胶中形成开口，其中所述光刻胶包括感光化合物（PAC），并且在显影步骤之后保留所述光刻胶的已曝光部分；
在所述开口中镀电连接件，所述电连接件的底部横向尺寸大于顶部横向尺寸；
在镀步骤之后，去除所述光刻胶；以及
在去除所述光刻胶的步骤之后，去除暴露的所述UBM层的部分。
6.根据权利要求5所述的方法，其中，所述底部横向尺寸和所述顶部横向尺寸之间的差值大于约4μm，其中，所述电连接件具有高度，并且所述差值的一半与所述高度的比值大于约0.06。
7.根据权利要求5所述的方法，其中，所述电连接件包括非焊料材料，并且所述方法进一步包括将包含所述电连接件的晶圆切割为分离的管芯，并且在切割步骤之后，所述电连接件的底部横向尺寸仍大于所述顶部横向尺寸，其中，所述PAC的重量百分比小于约1%。
8.根据权利要求5所述的方法，其中，在曝光步骤之后，到达所述光刻胶的底部的光强度小于所述光刻胶的顶面所接收的光强度的约5%；或者
所述电连接件包括焊料层，并且所述方法进一步包括回流所述焊料层。
9.一种方法，包括：
在凸块下金属（UBM）层的上方涂覆光刻胶，其中所述光刻胶包括感光化合物（PAC）；
使用光刻掩模曝光所述光刻胶，其中所述光刻胶吸收用于曝光的光，并且所述光刻胶的底面处的光的第一光强度与所述光刻胶的顶面处的光的第二光强度的比小约0.05；
显影所述光刻胶以去除所述光刻胶的未曝光部分，从而在所述光刻胶中形成开口；
在所述开口中镀电连接件，其中所述电连接件包括非焊料材料；
在镀步骤之后，去除所述光刻胶；以及
在去除所述光刻胶的步骤之后，去除暴露的所述UBM层的部分。
10.根据权利要求9所述的方法，其中，所述开口具有顶部横向尺寸和底部横向尺寸，并且所述底部横向尺寸比所述顶部横向尺寸大约4μm；或者
所述光刻胶的厚度在约30μm和约60μm之间；或者
金属凸块具有铃形的截面，所述金属凸块的底部的倾斜度大于所述金属凸块的顶部的倾斜度；或者
所述光刻胶包括：聚合物，其重量百分比小于约40%；溶剂，其重量百分比小于约35%；交联剂，其重量百分比小于约20%；以及PAC，其重量百分比小于约5%。
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