CN104022216A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
CN104022216A
CN104022216A CN201410073414.7A CN201410073414A CN104022216A CN 104022216 A CN104022216 A CN 104022216A CN 201410073414 A CN201410073414 A CN 201410073414A CN 104022216 A CN104022216 A CN 104022216A
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China
Prior art keywords
light
electrode
emitting component
emitting device
emitting
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Granted
Application number
CN201410073414.7A
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Chinese (zh)
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CN104022216B (en
Inventor
大汤孝宽
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Nichia Corp
Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Publication of CN104022216B publication Critical patent/CN104022216B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

The invention provides a light emitting device, so that electrical connection wiring of the light emitting device and a wiring substrate is not easy to break. The light emitting device includes: a flexible substrate having a negative lead electrode and a positive lead electrode formed on an upper surface thereof; a light emitting element having a negative electrode and a positive electrode formed on an upper surface thereof; an insulating film formed on a side surface of the light emitting element; a wiring formed in contact with the insulating film for connecting between the negative electrode and the negative lead electrode, or between the positive electrode and the positive lead electrode.

Description

Light-emitting device
Technical field
The present invention relates to be equipped with the light-emitting device of light-emitting component, the face that is particularly equipped with to be formed with electrode is for above installing the light-emitting device of light-emitting component corresponding to (hereinafter referred to as the installation that faces up).
Background technology
The semiconductor light-emitting elements (being designated as below light-emitting component) such as light-emitting diode (LED) and laser diode (LD) have following feature,, small-sized, electrical efficiency is high, send the light of bright-colored, in addition, owing to being semiconductor element, so have without worrying that bulb burns out (ball is cut れ) etc., and then initial drive characteristic is good, the strong feature of repeatability of vibrating and lighting a lamp and turn off the light.Owing to thering is the characteristic of such excellence, so be equipped with the light-emitting device of light-emitting component as the normal domestic light source of the backlight of lighting apparatus and LCDs (LCD) as light source, utilize the structure corresponding to its purposes.
For example, there is the light-emitting device that is equipped with light-emitting component the substrate surface of tabular and film-form is formed with the wiring substrate (printed base plate) of pattern of lead-in wire electrode with metal film on.In the time that semiconductor element (chip) is installed on to wiring substrate, at the installation region semiconductor element mounted thereon of the regulation of wiring substrate, the electrode of semiconductor element is electrically connected with the lead-in wire electrode (lead) on wiring substrate, utilizes resin by semiconductor element encapsulation.Now, have: will be provided with electrode (pad electrode) facing to upper and mounting semiconductor element forms the installation that faces up of the distribution (wire) of pad electrode and lead-in wire electrode electrical connection; By pad electrode towards lower and with the flip-chip of lead-in wire electrode engagement semiconductor element mounted thereon, (installation faces down) is installed.
Face up to install and conventionally utilize wire-bonded to carry out the formation of distribution, now, be only made as arcuation at the pad electrode of two ends and semiconductor element with lead-in wire electrode engagement as the lead-in wire of distribution.Therefore,, in wire-bonded is installed, the lead-in wire together being sealed by resin with semiconductor element may break in the situation that being subject to from external stress.On the other hand, flip-chip is installed because the position of the pad electrode that needs conjunction with semiconductors element configures the lead-in wire electrode surface opposite of wiring substrate, and compared with installing with wire-bonded, operation is not easy.
Therefore, exploitation has not based on wire-bonded and by facing up, corresponding light-emitting component is installed and is installed on the method for wiring substrate.For example in patent documentation 1, disclose the installation method that utilizes conductive ink printed wiring and the lead-in wire electrode of the electrode above light-emitting component and wiring substrate is connected.In recent years, conductive ink is also applicable to the fine distributions such as wiring substrate and forms, particularly according to ink jet mode, also can be to thering is the face printing of step to a certain degree, so can form distribution (chip distribution: ダ イ ス distribution) as the wiring substrate of chip mounting surface via chip sides (end face) by the electrode above the chip of light-emitting component.
Patent documentation 1:(Japan) JP 2011-243666 communique
The installation method of recording according to patent documentation 1, by the layer of the translucent resin such as epoxy resin and polyurethane resin is set in the side that loads the light-emitting component on wiring substrate, the semiconductor layer insulation by the chip distribution being formed by conductive ink (ダ イ ス distribution) with light-emitting component.But in such structure, chip distribution is located at the resin bed of light-emitting component side and the translucent resin of encapsulating luminescent element is clipped, only by resin support, so can similarly broken string be installed with wire-bonded.Particularly, in the case of the flexible substrate of film-form is made as wiring substrate, easily break due to bending stress.In addition, be located at the resin bed of light-emitting component side owing to being clipped by light-emitting component and the high chip distribution of thermal conductivity, so follow the use of light-emitting device, due to heat and light especially easily through time deteriorated, light transmission easily declines.
Summary of the invention
The present invention puts in view of the above problems and sets up, and its problem is to provide a kind of light-emitting device, can applicable surface be installed by corresponding light-emitting component upward, and the reliability of installing than wire-bonded is high.
Present inventor has expected the light-emitting device of following formation.
The light-emitting device of first aspect present invention, comprising: flexible substrate, and it has negative lead-in wire electrode and positive lead-in wire electrode in the above; Light-emitting component, it has negative electrode and positive electrode in the above; Dielectric film, it is formed on the side of described light-emitting component; Distribution, its formation of joining on described dielectric film, will connect between described negative electrode and described negative lead-in wire electrode or between described positive electrode and described positive lead-in wire electrode.
According to such formation, having used in the light-emitting device of flexible substrate, can make distribution be difficult for broken string.
The light-emitting device of second aspect present invention, comprising: flexible substrate; Negative lead-in wire electrode, it has multiple the first extension electrodes that the first linking part and one end separately and described the first linking part link, and be formed on described substrate above; Positive lead-in wire electrode, it has multiple the second extension electrodes that the second linking part and one end separately and described the second linking part link, and with this second extension electrode with the interval of regulation and the mode of described the first extension electrode adjacency be formed on described flexible substrate above; Multiple light-emitting components, it has respectively positive electrode and negative electrode in the above, is connected with respectively negative electrode at the first extension electrode, is connected with respectively positive electrode at the second extension electrode of the opposing party; Dielectric film, it is respectively formed at the side of described multiple light-emitting components; Multiple distributions, it is respectively formed on described dielectric film, will between described positive electrode and described the first extension electrode or between described negative electrode and described the second extension electrode, connect respectively.
The light-emitting device of third aspect present invention, comprising: substrate; Negative lead-in wire electrode, it has multiple the first extension electrodes that the first linking part and one end separately and described the first linking part link, and be formed on described substrate above; Positive lead-in wire electrode, it has multiple the second extension electrodes that the second linking part and one end separately and described the second linking part link, with this second extension electrode with the interval of regulation and the mode of described the first extension electrode adjacency be formed on described substrate above; Multiple light-emitting components, it has respectively positive electrode and negative electrode in the above, crosses over respectively with the first extension electrode of the interval adjacency of described regulation and the second extension electrode and arranges; Dielectric film, it is respectively formed at the side of described light-emitting component; Distribution, it is respectively formed on described dielectric film, will between described negative electrode and described the first extension electrode or between described positive electrode and described the second extension electrode, connect respectively.
According to light-emitting device of the present invention, can apply flexibly and can be installed on such the facing up of wiring substrate that versatility is high the advantage of corresponding light-emitting component is installed, and reliability is higher than the light-emitting device of installing based on wire-bonded.
Brief description of the drawings
Fig. 1 is the outside drawing of the formation of explanation light-emitting device of the present invention;
Fig. 2 is the schematic diagram of the formation of the light-emitting device of explanation first embodiment of the invention, (a) is the plane graph that is equipped on the light-emitting component of light-emitting device, is (b) the major part profile that is equivalent to the light-emitting device of the A-A alignment pseudosection of (a);
Fig. 3 is the flow chart of the manufacture method of the light-emitting component of explanation first embodiment of the invention;
Fig. 4 is the schematic diagram of the formation of the light-emitting device of explanation second embodiment of the invention, is the major part profile that is equivalent to the light-emitting device of the A-A alignment pseudosection of Fig. 2 (a);
Fig. 5 is the schematic diagram of the formation of the light-emitting device of explanation third embodiment of the invention, is the major part profile that is equivalent to the light-emitting device of the A-A alignment pseudosection of Fig. 2 (a);
Fig. 6 is the flow chart of the manufacture method of the light-emitting component of explanation third embodiment of the invention;
Fig. 7 is the schematic diagram of the formation of the light-emitting device of explanation four embodiment of the invention, is the major part profile that is equivalent to the light-emitting device of the A-A alignment pseudosection of Fig. 2 (a);
Fig. 8 is the schematic diagram of the formation of the light-emitting device of explanation fifth embodiment of the invention, is the major part profile that is equivalent to the light-emitting device of the A-A alignment pseudosection of Fig. 2 (a);
Fig. 9 is the schematic diagram of the formation of the light-emitting device of explanation sixth embodiment of the invention, (a) is the plane graph that is equipped on the light-emitting component of light-emitting device, is (b) the major part profile that is equivalent to the light-emitting device of the B-B alignment pseudosection of (a).
Description of symbols
10,10A, 10B, 10C, 10D, 10E: light-emitting device
1,1A, 1B: wiring substrate (substrate)
11,11A, 11B: base material
121: negative lead-in wire electrode
121a: the first extension electrode
121b: the first linking part
122: positive lead-in wire electrode
122a: the second extension electrode
122b: the second linking part
21,21A, 21B: chip distribution (distribution)
22,22A, 22B: chip distribution (distribution)
3,3A, 3B, 3D, 3E: light-emitting component
30: nitride-based semiconductor
31: device substrate
32:n type semiconductor layer
33: active layer
34:p type semiconductor layer
4: optically transparent electrode
51,51A, 51B:n pad electrode (electrode)
52,52A, 52B:p pad electrode (electrode)
6: diaphragm
7,7A, 7B: dielectric film
8,8A, 8B: attachment
9: seal member
Embodiment
With reference to accompanying drawing, light-emitting device of the present invention is described.In addition, in this manual, above and be respectively the face parallel with xy face in the figure of wiring substrate 1 or light-emitting component below.
Below, with reference to Fig. 1 and Fig. 2, the light-emitting device of first embodiment of the invention is described.In addition, Fig. 2 (a) is equivalent to the plane graph that the part of Fig. 1 is amplified, and Fig. 2 (b) is equivalent to the profile of Fig. 2 (a), and in order at length to represent major part, the size of Fig. 1 and Fig. 2 (a) and (b) is inconsistent.
(the first execution mode)
As shown in Figure 1, above the light-emitting device 10 of first embodiment of the invention, be the main exit facet of light, on banded wiring substrate (substrate) 1, (the x direction in figure) row shape ground is arranged and is equipped with 4 light-emitting components 3 along its length.Specifically, in light-emitting device 10, on wiring substrate 1 to be formed with a pair of pad electrode (electrode) 51,52(with reference to Fig. 2 (a)) carry plane as upper mode and see roughly foursquare light-emitting component 3, by chip distribution (distribution) 21,22, pad electrode 51,52 is electrically connected with the lead-in wire electrode 12 of wiring substrate 1.Below, in this manual, be " connection " by simple the state of following conducting and contact souvenir.In addition, chip distribution 21,22 is formed on the dielectric film 7(that the side of light-emitting component 3 is covered with reference to Fig. 2 (b)) surface.In addition, in the light-emitting device 10 of present embodiment, utilize the roughly seal member 9 of hemispherical lifting that the surface of the wiring substrate 1 of a light-emitting component 3 and periphery thereof is sealed respectively.In addition, light-emitting device 10 uses as 1 under the rectangular state that is linked with 4 light-emitting components 3 shown in Fig. 1, below, in this manual, as a light-emitting device 10, to comprising 1 light-emitting component 3 and the light-emitting device of the seal member of this 1 encapsulating luminescent element 9 being described.
(wiring substrate)
As wiring substrate 1, can be suitable for for carrying wire-bonded the flexible substrate of corresponding light-emitting component is installed, in more detail for flexible printing substrate (FPC:Flexible printed circuits).Wiring substrate 1 has: polyimide film etc. have the base material 11 of flexual sheet material (film) shape; On it by the film formed lead-in wire electrode 12 of the metals such as copper.Base material 11, except above-mentioned polyimides, also can be formed by general flexible substrate materials such as liquid crystal polymer (LCP) or PETGs (PET).Polyimides or LCP that the metals such as the copper of base material 11 particularly suitable coefficient of thermal expansions and the electrode 12 that is applicable to go between relatively approach, due to peeling off of the lead-in wire electrode 12 that has suppressed to be caused by thermal stress etc., so preferably.Shape and the thickness of base material 11 are not particularly limited, can the suitably design according to offer user's the form of light-emitting device and purposes as product.For example, in the situation of the shape (, thering is the rectangular shape on minor face and long limit) of extending being shaped as of flexible substrate, easily there is the broken string of light-emitting component in a direction, if but use formation of the present invention, can effectively prevent broken string.
Lead-in wire electrode 12 comprises negative lead-in wire electrode 121 and positive lead-in wire electrode 122.Negative lead-in wire electrode 121 and positive lead-in wire electrode 122(are suitably referred to as lead-in wire electrode 12) can use the metal material of the wiring substrate that is applicable to general semiconductor element, can enumerate copper, silver, gold, aluminium etc., from thermal conductivity and processability aspect, particularly preferably copper.Lead-in wire electrode 12 utilizes the surface filming of the known method such as plating and evaporation at base material 11, can utilize etching etc. to carry out pattern formation.In addition, in the situation that base material 11 is formed by LCP, also can utilize the thermo-compressed of LCP and attach metal forming.In addition, lead-in wire electrode 12 also can be printed on the surface of base material 11 by conductive ink and form.Thickness and the width of lead-in wire electrode 12 are not particularly limited, can be according to the resistance as lead-in wire electrode, be equipped on the suitably design such as driving voltage and drive current of the light-emitting component 3 of light-emitting device 10.
The pattern form (plane is seen shape) of negative lead-in wire electrode 121 and positive lead-in wire electrode 122 is not particularly limited, but in the present embodiment, and to go between, the two the mode engaging with the bottom surface of light-emitting component 3 above of electrode 121,122 configures.For example, arranging in the light-emitting device that carries multiple light-emitting components 3 as shown in Figure 1, can form following such pattern form on the length direction of banded wiring substrate (substrate) 1.First, negative lead-in wire electrode 121 is formed as have the broach shape of multiple the first extension electrode 121a that the first linking part 121b and one end link with the first linking part 121b respectively.In addition, positive lead-in wire electrode 122 is formed as have the broach shape of multiple the second extension electrode 122a that the second linking part 122b and one end link with the second linking part 122b respectively.And, with the first extension electrode 121a and the second extension electrode 122a with the relative mode of predetermined distance by negative lead-in wire electrode 121 and positive lead-in wire electrode 122 be configured in wiring substrate 1 above.In addition, in the region of installing light emitting element 3, the interval of the first extension electrode 121a and the second extension electrode 122a is made as the interval narrower than one side of light-emitting component 3.Form as described above negative lead-in wire electrode 121 and positive lead-in wire electrode 122, light-emitting component can be crossed over to negative lead-in wire electrode 121(the first extension electrode 121a) and positive lead-in wire electrode 122(the second extension electrode 122a) and arrange.
Thus, the lower end that loads the region that chip distribution 21,22 is at least set of light-emitting component 3 sides on wiring substrate 1 is positioned on the first extension electrode 121a and the second extension electrode 122a.Thus, can connect respectively the first extension electrode 121a and chip distribution 21 and the second extension electrode 122a and chip distribution 22 in the position of the lower end that approaches light-emitting component 3 sides.More specifically, as shown in Figure 2, in x direction, with compared with the length L of light-emitting component 3, distance (interval) d between the first extension electrode 121a and the second extension electrode 122a shortens and the mode of the distance (W+d+W) elongated (d ﹤ L ﹤ W+d+W) of the end in the first extension electrode 121a outside and the end in the second extension electrode 122a outside forms negative lead-in wire electrode 121 and positive lead-in wire electrode 122.According to such configuration, chip distribution 21(22) can be from the pad electrode 51(52 of light-emitting component 3) surface arrives first extension electrode 121a(the second extension electrode 122a under it via the side (surface of dielectric film 7) of light-emitting component 3) and surface.In addition, chip distribution 21,22 is not formed on the surface of the base material 11 being formed by resin, by with the first extension electrode 121a and the surface of the second extension electrode 122a between be connected, compared with the situation of a part that is formed with chip distribution with the surface of the base material 11 being formed by resin, reduce the possibility that is caused broken string by bending stress, there is flexual wiring substrate 1 even if use, be also difficult for broken string.In addition, due to the pad electrode 51(52 of light-emitting component 3) to first extension electrode 121a(the second extension electrode 122a) distance short, even so chip distribution 21(22) shorter also passable.
Above, in the present embodiment, because light-emitting component is crossed over negative lead-in wire electrode and positive lead-in wire electrode arranges, so negative electrode and positive electrode can be connected with negative lead-in wire electrode and positive lead-in wire electrode with shorter distance.In addition, positive electrode and negative electrode can be connected with positive lead-in wire electrode and negative lead-in wire electrode substantially by the distribution that is only formed at substrate side surfaces, without form distribution on substrate.
Thus, can reduce the broken string risk of distribution.
In addition, the first extension electrode 121a and the second extension electrode 122a fully stretch out setting (W+d+W ﹥ ﹥ L) for well in x direction to the outside of light-emitting component 3.According to such configuration, can be by chip distribution 21(22) at first extension electrode 121a(the second extension electrode 122a) above extend to form to the outside of light-emitting component 3, the contact area of chip distribution 21 and the first extension electrode 121a and the contact area of chip distribution 22 and the second extension electrode 122a can be increased, the reliability of light-emitting device 10 can be easily improved.In addition, the first extension electrode 121a and the second extension electrode 122a width (x direction length) W is separately identical in the present embodiment, but also can be different.In addition, as shown in Figure 2, light-emitting device 10 is in x direction, and the center of light-emitting component 3 mode consistent with the first extension electrode 121a and the second extension electrode 122a Jian center (center of interval d) configures, but is not limited to such configuration.
In addition, by the light penetrating downwards from light-emitting component 3 is irradiated to lead-in wire electrode 12, the lead-in wire electrode 12 being made up of metal becomes reflectance coating, can improve the taking-up efficiency of the light of light-emitting device 10.In addition, by making light-emitting component 3 not with base material 11 but with lead-in wire electrode 12 engage, can improve the thermal diffusivity of light-emitting device 10.Therefore, go between electrode 12 preferably so that the interval d of the first extension electrode 121a and the second extension electrode 122a degree of not short circuit is mutually formed as engaging such pattern form with more area with the bottom surface of light-emitting component 3.
In addition, the first extension electrode 121a and the second extension electrode 122a are widely formed as.As shown in Figure 1, the first extension electrode 121a and the second extension electrode 122a extend setting laterally from the below of light-emitting component 3, by width W being widened to the whole region that is formed with seal member 9 for spreading all over, not only become the conductor that resistance is lower, and to have shape layer be the so effective effect of reflectance coating and heating panel.In addition, as the light-emitting device 10 of present embodiment, in the time manufacturing (assembling), wiring substrate 1 is in banded situation, length direction, in this case in x direction alignment arrangements the first extension electrode 121a and the second extension electrode 122a for well.Thus, under viewed in plan, chip distribution 21,22 can be formed as to the distribution shape parallel with the length direction of wiring substrate 1, the formation operability of the chip distribution 21,22 based on ink jet mode described later improves.But, chip distribution 21 with 22 also can with under viewed in plan on the length direction of wiring substrate mode vertical in fact or that there is inclination angle form.Thus, chip distribution 21 and 22 can be avoided the bending stress that wiring substrate 1 or light-emitting device 3 are applied.
As mentioned above, because lead-in wire electrode 12 also works as reflectance coating, so also can utilize on surface the high metal films of lamination reflectivity such as plating.Particularly, can enumerate a kind of metal of selecting or the alloy of above-mentioned metal from silver, rhodium, gold, aluminium, with regard to visible ray, the reflectivity of silver is the highest, so preferably.Therefore, for example, there is silver-colored double-layer structural by lead-in wire electrode 12 is formed as to lamination on copper, can improve taking-up efficiency two aspects of thermal conductivity (thermal diffusivity) and light.In addition, also can, in the region that is not provided with lead-in wire electrode 12 on base material 11 surfaces, be formed with metal film (not shown) as reflectance coating.Now, obviously form in the mode of the lead-in wire electrode 121 that do not make to bear and positive lead-in wire electrode 122 conductings as the metal film of reflectance coating.
(chip distribution)
Chip distribution 21 is distributions that the n pad electrode 51 of light-emitting component 3 is connected with negative lead-in wire electrode 121, and chip distribution 22 is distributions that the p pad electrode 52 of light-emitting component 3 is connected with positive lead-in wire electrode 122., chip distribution 21 and chip distribution 22 replace the lead-in wire in wire-bonded installation and arrange.Wherein, chip distribution 21,22 is along the side of light-emitting component 3, directly form on the surface of the dielectric film 7 of covering luminous element 3 sides in detail.To this, the two ends of bonding wire (connecting portion) only supported by seal member (resin) in addition.Like this, chip distribution 21,22 is different from bonding wire, by light-emitting component 3(dielectric film 7) and seal member 9 clip and be supported, so be difficult for broken string.
Chip distribution 21,22 is from loading on the dielectric film 7 covering in the light-emitting component 3 of wiring substrate 1 and by its side, by printing the conductive ink that adheres to metal nanoparticles such as containing Au, Ag, Cu, as required and sintering forms.Formation (printing) method of chip distribution 21,22 can be suitable for the general method of utilizing printing to form wiring substrate etc., particularly, can enumerate ink jet mode and screen printing mode.Particularly according to ink jet mode, can easily be formed on the face with the such step of the amount of thickness of light-emitting component 3 also continuous chip distribution 21,22.In addition, conductive ink can be suitable for the material corresponding to printing process.Conductive ink is in order to suppress to the damage of light-emitting component 3 grades, and preferably sintering temperature is 200 DEG C of conductive inks below left and right.
Chip distribution 21(22) distribution shape be not particularly limited, but in order to shorten distribution length, with from pad electrode 51(52) with the beeline lead-in wire electrode 122 positive with negative lead-in wire electrode 121() mode that is connected is formed as.In addition, in the present embodiment, as shown in Figure 2 (a) shows, chip distribution 21(22) two ends large, respectively with pad electrode 51(52), the positive lead-in wire electrode 122 of negative lead-in wire electrode 121() connection area become large and form.In addition, as the light-emitting device 10 of present embodiment, at wiring substrate 1 be banded in the situation that, chip distribution 21,22 is formed as the distribution shape parallel with the length direction (the x direction in accompanying drawing) of wiring substrate 1 under viewed in plan, but due to the raising of the operability based on ink jet mode as described later, so preferably.But, chip distribution 21 with 22 also can with under viewed in plan on the length direction of wiring substrate mode vertical in fact or that there is inclination angle form.Thus, chip distribution 21 and 22 can be avoided the bending stress that wiring substrate 1 or light-emitting device 3 are applied.In the present embodiment, chip distribution 21(22) on light-emitting component 3 with from its four limit middle distance pad electrode 51(52) approximate centre on nearest limit vertically downward mode arrange along the side, a left side (right side) of light-emitting component 3.In addition, chip distribution 21,22 is without particular limitation of thickness and distribution width, corresponding to the resistance as conductor, be equipped on light-emitting device 10 light-emitting component 3 driving voltage and drive current etc. and suitably design, but for resistance being suppressed compared with low and make distribution thicker, and in order can more not block light that light-emitting component 3 sends and constriction distribution wide cut, preferred thickness is formed as 10～20 μ m degree.
(light-emitting component)
Light-emitting component 3 is the light source of light-emitting device 10, is self luminous semiconductor element (semiconductor light-emitting elements) by applying voltage, and Application Example is as the light-emitting diode being made up of nitride-based semiconductor etc. (LED).Particularly, the light-emitting component that is equipped on light-emitting device 10 3 of present embodiment can be suitable for wire-bonded corresponding formation is installed, wherein, as long as only process side view in the mode being described by manufacture method described later.
In the present embodiment, light-emitting component 3 is seen roughly square and upper and lower (y direction) symmetrical structure that length is on one side L for plane.In the plane graph of Fig. 2 (a), from center line (A-A line), represent the first half.Light-emitting component 3 for example on the such light-transmitting substrate of sapphire (device substrate) 31, make successively N-shaped semiconductor layer 32, active layer (luminescent layer) 33, p-type semiconductor layer 34 nitride-based semiconductor 30 each layer of epitaxial growth and after lamination, form and manufacture the electrode (n pad electrode 51, optically transparent electrode 4 and p pad electrode 52) being connected with N-shaped semiconductor layer 32, p-type semiconductor layer 34 respectively.In the light-emitting device 10 of present embodiment, light-emitting component 3 is positioned on wiring substrate 1 device substrate 31 downwards, in order to be provided with pad electrode 51,52 from supplying with electric current near center separately, limit, left and right upward, outside., light-emitting component 3 is the semiconductor elements corresponding to the installation that faces up (wire-bonded installation) in the above with a pair of pad electrode 51,52.Below, the key element of light-emitting component 3 is described in detail.
(device substrate)
The material of device substrate 31 is not particularly limited, but in the manufacture of light-emitting component 3, can be suitable for each long-pending baseplate material that for example can make growing nitride semiconductor waiting layer by layer of nitride-based semiconductor 30.As the substrate being formed by such material, can enumerate using arbitrary in C face, R face, A face as the sapphire of interarea, spinelle (MgAL using (111) face as interarea 2o 4) such insulating properties substrate, carborundum (SiC), ZnS, ZnO, Si, GaAs, diamond and with oxide substrate such as niobium oxygen lithium, gallium oxygen neodymium of nitride-based semiconductor Lattice Matching etc.In the light-emitting device 10 of present embodiment, light-emitting component 3 is using as the back side of device substrate 31 of bottom surface and the lead-in wire electrode of a pile negative, positive of wiring substrate 1 121,122, the two engages, in addition for the side at device substrate 31 (end face) directly arranges chip distribution 21,22, so insulating properties substrate, for example sapphire are used as to device substrate 31.
Size and the thickness etc. of device substrate 31 are not particularly limited, but in the fabrication stage of light-emitting component 3, the rectangular arrangement of multiple light-emitting components 3 is formed on to a block element substrate 31(wafer) upper, so need intensity to a certain degree as base station, need to guarantee the thickness of enough intensity.On the other hand, at light-emitting component 3(wafer) complete after, be slit into chip in order to utilize cut-out (cutting) or to cut off (breaking) decile, device substrate 31 preferably grinds from the back side cuts (grinding back surface) etc. and thin-walled property.Particularly, in the light-emitting device 10 of present embodiment, in order easily to form chip distribution 21,22 and shorter in well, preferably make the thickness of light-emitting component 3 little (thin).Therefore, device substrate 31 thin-walled properties for well, for example, can be formed as 50～250 μ m by thickness by grinding to cut to the degree nitride-based semiconductor 30 not being exerted an influence (as long as can maintain necessary intensity).
(nitride-based semiconductor)
As N-shaped semiconductor layer 32, active layer 33 and p-type semiconductor layer 34, be not particularly limited, but be for example suitable for In xal yg al-X-Yn(0≤X, 0≤Y, X+Y ﹤ 1) etc. gallium nitride compound semiconductor.N-shaped semiconductor layer 32, active layer 33 and p-type semiconductor layer 34(are suitably referred to as nitride-based semiconductor 30) can be respectively monolayer constructions will, can be also lamination structure, the superlattice structure etc. of the different layer of composition and thickness.Particularly, be that the single quantum well or the multiple quantum trap that produce after the film lamination of quantum effect are configured to as the active layer 33 of luminescent layer, in addition, trap layer is the nitride-based semiconductor that contains In for well.In addition, on device substrate 31, also can at random form N-shaped semiconductor layer 32 via basalises (not shown) such as the unmatched resilient coatings for relaxing lattice constant and device substrate 31.
(electrode)
Light-emitting component 3 has the n pad electrode 51 being connected with N-shaped semiconductor layer 32 and the p pad electrode 52 being connected with p-type semiconductor layer 34.In order to supply with electric current from outside, n pad electrode 51 and p pad electrode 52 are respectively by chip distribution 21, the 22 lead-in wire electrode 121 negative with wiring substrate 1(, positive lead-in wire electrode 122) be connected.The light-emitting component 3 of the light-emitting device 10 of present embodiment is for n lateral electrode and p lateral electrode are located to the same face side and are located at p-type semiconductor layer 34 sides, and p-type semiconductor layer 34 sides are made as to light take out side.Particularly, as shown in Figure 2 (a) shows, p pad electrode 52 with in whole of the higher p-type semiconductor layer 34 of resistance equably the mode of current flowing be arranged on the optically transparent electrode 4 being formed at above p-type semiconductor layer 34 roughly whole.On the other hand, n pad electrode 51 is arranged on the N-shaped semiconductor layer 32 of the p-type semiconductor layer 34 in a part of region and active layer 33 being removed and expose, and is connected with its N-shaped semiconductor layer 32.
Optically transparent electrode 4 is that the electroconductive oxides such as indium-tin-oxide (Indium Tin Oxide:ITO) or zinc oxide (ZnO) form by transparent electrode material.In addition, pad electrode 51,52 is formed by metal electrode material such as Al, Cu, Au.In addition, pad electrode 51,52 is formed as being connected required shape and area with N-shaped semiconductor layer 32 or optically transparent electrode 4, and is formed as being connected required flat shape and area with chip distribution 21,22.In addition, pad electrode 51,52 is under viewed in plan, and the periphery that is preferably arranged on light-emitting component 3 is near on limit.By forming such configuration, in the time that light-emitting component 3 is arranged on wiring substrate 1, chip distribution 21,22 is shorter, particularly, in the situation that chip distribution 21,22 utilizes ink jet mode to form, what be suppressed at light-emitting component 3 adheres to above unnecessary conductive ink.
(diaphragm, dielectric film)
The coverings such as the surface of surface that diaphragm 6 exposes the nitride-based semiconductor of light-emitting component 3 30 (above and end face) and optically transparent electrode 4.Particularly, will be that the 6h of bonding pad opening portion removes and forms diaphragm 6 for the region being connected with outside.Diaphragm 6 covers pad electrode 51,52 circumference above, and pad electrode 51,52 region of removing outside circumference above becomes the 6h of bonding pad opening portion.In the light-emitting device 10 of present embodiment, diaphragm 6 is integrally formed by chip distribution 21,22 and for the insulator (being suitably designated as dielectric film 7) insulating with nitride-based semiconductor 30 in the side of light-emitting component 3 (end face).Dielectric film 7 is in the region that is at least provided with chip distribution 21,22 of light-emitting component 3 sides, so that each layer 32,33,34 mode of all not exposing of nitride-based semiconductor 30 covers.Particularly in the situation that chip distribution 21,22 utilizes ink jet mode to form; for the short circuit that prevents from causing owing to adhering to unnecessary conductive ink, diaphragm 6(dielectric film 7) mode do not exposed with nitride-based semiconductor 30 and the optically transparent electrode 4 of light-emitting component 3 is covered as.In the light-emitting device 10 of present embodiment, diaphragm 6(dielectric film 7) except the bottom (device substrate 31) of the 6h of bonding pad opening portion above it and bottom surface and side and covering luminous element 3.
At this, dielectric film 7 is suitable for inorganic matter and light transmission insulating material for well.In addition, dielectric film 7 at least in the side of light-emitting component 3 with roughly uniformly thickness be formed as.This is because, the film of inorganic matter is than the good endurance of the translucent resin films such as epoxy resin, the possibility that light transmission reduces and to be formed on the possibility of surperficial chip distribution 21,22 broken strings of this film few.In addition, diaphragm 6, as long as the insulating material of light transmission, is not limited to inorganic matter, can be at manufacture light-emitting component 3(wafer but be preferably similarly suitable for dielectric film 7) time film forming inorganic matter.As the membrane material of the insulating properties of inorganic matter, can enumerate particularly the oxide (SiO such as Si, Ti, Ta, Nb, Zr, Mg 2, TiO 2, Ta 2o 5, Nb 2o 5, ZrO 2, MgO), Si nitride (for example Si 3n 4), nitride or the magnesium fluoride (MgF such as AlN 2) etc.In addition, the thickness of diaphragm 6, dielectric film 7 is not particularly limited, and is preferably the scope of 10～10000nm.These materials can be by known method film forming such as vapour deposition method, sputtering methods in the time manufacturing light-emitting component 3.Particularly, at light-emitting component 3 with array-like at a block element substrate 31(wafer) be formed with under multiple states, form diaphragm 6(dielectric film 7).Therefore, the mode of not exposing at cutting plane with nitride-based semiconductor 30 when by the light-emitting component completing 3 singualtion (cutting) is in advance by this light-emitting component 3(chip) the nitride-based semiconductor 30 of circumference (scribe area, mark hacures represent in Fig. 2 (a)) remove completely, work from it forming dielectric film 7(and at length utilize manufacture method to describe).
Below, other key elements of the light-emitting device 10 to the first execution mode are described in detail.
(attachment)
Attachment 8 are for light-emitting component 3 is fixed on to the member on wiring substrate 1, in the light-emitting device 10 of present embodiment, by the surface engagement of the lead-in wire electrode 12 of the bottom surface of light-emitting component 3 (back side of device substrate 31) and wiring substrate 1.Attachment 8 so that light-emitting component 3 and wiring substrate 1(particularly, the first extension electrode 121a and the second extension electrode 122a) between the not excessive mode in interval be set to, thus, can make first extension electrode 121a(the second extension electrode 122a) and pad electrode 51(52) approach, can easily and stably carry out first extension electrode 121a(the second extension electrode 122a) and chip distribution 21(22) connection., attachment 8 at least in the region that forms chip distribution 21,22 with at light-emitting component 3 and wiring substrate 1(the first extension electrode 121a and the second extension electrode 122a) between the mode of gap smaller compared with unfertile land setting.
In the light-emitting device 10 of present embodiment, attachment 8 are without light-emitting component 3 and wiring substrate 1 are electrically connected, in addition, the device substrate 31 that the composition surface (bottom surface) of light-emitting component 3 is insulating properties, so can use the insulating properties of the installation (chips welding) that is applicable to general semiconductor element, any attachment of conductivity.As the attachment of insulating properties, enumerate the bonding agent of epoxies and silicone etc., as the attachment of conductivity, enumerate respectively the conductive paste such as scolder, Ag, eutectic alloy etc., the attachment that are suitable in the present invention conductivity are for well.Conventionally, the electroconductive components such as scolder are because thermal conductivity is higher than the bonding agent of resinae, so can improve the thermal diffusivity of light-emitting device 10.In addition, in the situation that attachment 8 are conductivity, as shown in Fig. 2 (b), divide and be arranged respectively on negative lead-in wire electrode 121 and positive lead-in wire electrode 122 in the mode of 121,122 not short circuits of lead-in wire electrode of negative, positive, each attachment 8 engage with the bottom surface of light-emitting component 3 respectively.On the other hand, in the situation that attachment 8 are insulating properties, also the whole bottom surface of light-emitting component 3 can be arranged on the base material 11 between negative lead-in wire electrode 121 and positive lead-in wire electrode 122.
(seal member)
Seal member 9, by the sealing (burying underground) such as a part and chip distribution 21,22 of a part for light-emitting component 3, negative lead-in wire electrode 121, positive lead-in wire electrode 122, protects it not to be subject to the impact of dust, moisture, external force etc.For example as illustrated in fig. 1, the region that is placed with light-emitting component 3 on wiring substrate 1 is by discharge translucent resin materials such as distributors and it is solidified to form for seal member 9.Seal member 9 is at least buried light-emitting component 3 and chip distribution 21,22 underground, and its shape is not construed as limiting.In the present invention, chip distribution 21,22 is different from bonding wire, the utmost point of light-emitting component 3 nearby hardly from above and side configure highlightedly.Therefore, seal member 9, without forming compared with heavy back on light-emitting component 3, can decide thickness and shape according to the characteristic of other requirements such as the effect of optics.For example, in the light-emitting device 10 of present embodiment, seal member 9 forms by protuberance in the circle (with reference to Fig. 1) of the encirclement light-emitting component 3 on wiring substrate 1 resin material that is adjusted to viscosity higher, can become plane and see the roughly hemispherical of circle, can effectively carry out the light of self-emission device 3 to external irradiation.
Seal member 9 and the light-emitting device that is equipped with common light-emitting component are similarly, utilization forms the translucent resin material of the light transmission of light-emitting component 3, particularly, enumerate and comprise the silicones, epoxy resin, Lauxite etc. that mix silicone, but preferably thermal endurance and the good silicones of light resistance.In addition, also can in these resin materials, contain fluorescent material, colouring agent, light diffusing agent, filler etc. according to the object of light-emitting device 10 and purposes, particularly, because the coefficient of thermal expansion of silicones is high, so suitably reduce coefficient of thermal expansion for well by filler.Or seal member 9 is formed as the hardness of the degree that can protect light-emitting component 3 and chip distribution 21,22 and relaxes the structure of stress.
(manufacture method of light-emitting device)
With reference to Fig. 3, with the manufacture of light-emitting component of carrying, the manufacture method of the light-emitting device of first embodiment of the invention is together described.
Light-emitting device 10 is as illustrated in fig. 3 at least via following operation manufacture, that is: the S10 of wafer manufacturing process of the wafer that the state to be linked with light-emitting component 3 on device substrate 31 of manufacturing is arranged, cut apart wafer and form light-emitting component 3(chip according to each light-emitting component) singualtion operation S30, light-emitting component 3 is arranged on to the assembling procedure S40 on wiring substrate 1.The dielectric film of the dielectric film 7 that in the present embodiment, the S10 of wafer manufacturing process comprises the side that forms covering luminous element 3 forms operation S20.In addition, assembling procedure S40 comprises wiring substrate bonding process (light-emitting component bonding process) S41 light-emitting component 3 being loaded in wiring substrate 1 and engage, the sealing process S43 that chip distribution forms operation (distribution formation operation) S42, utilizes seal member 9 that light-emitting component 3 is sealed.Below, each operation is described.
(manufacture of light-emitting component: the formation of nitride-based semiconductor)
In semiconductor growth operation S11, using sapphire substrate as device substrate 31, use MOVPE reaction unit to grow up successively and form the nitride-based semiconductor separately (S11) of N-shaped semiconductor layer 32, active layer 33 and p-type semiconductor layer 34 on device substrate 31.
In the manufacture method of light-emitting device of the present invention, as the formation method of nitride-based semiconductor 30 of light-emitting component 3 that is equipped on light-emitting device 10, be not particularly limited, can suitably use MOVPE(Metal Organic Vapor Phase Epitaxy), MOCVD(organometallic chemistry chemical vapour deposition), HVPE(hydride chemical vapour deposition), MBE(molecular line epitaxy) etc. as the growing method of nitride-based semiconductor and known method.Particularly, MOCVD is owing to can crystallinity growing up well, so be preferred.In addition, preferably suitably select the growing method of various nitride-based semiconductors according to application target for each layer 32,33 of nitride-based semiconductor 30,34.
(manufacture of light-emitting component: the formation of n side contact regions)
In order to be formed for connecting the region (n side contact regions) of n pad electrode 51, each part of p-type semiconductor layer 34 and active layer is removed and make N-shaped semiconductor layer 32 surface (above) a part expose.Meanwhile, light-emitting component 3(chip) circumference (scribe area of wafer) also etch into the degree of depth (S12) identical with described n lateral electrode contact area.At length, make the device substrate 31(of each layer of nitride-based semiconductor 30 hereinafter referred to as wafer) on utilize photoresist to be formed on n side contact regions and scribe area to have the mask of peristome.Utilize reactive ion etching (RIE) by p-type semiconductor layer 34 and active layer 33, and then a part for N-shaped semiconductor layer 32 is removed and makes the n side contact layer in N-shaped semiconductor layer 32 expose on surface.
(manufacture of light-emitting component: chip sides expose)
In order to make light-emitting component 3(chip) side expose, further the scribe area of etched wafer and from scribe area by nitride-based semiconductor 30(n type semiconductor layer 32) remove (S13) completely.Particularly, on wafer, be formed on scribe area and have the mask of peristome.Now, the peristome of the mask of the shape of the peristome of mask when etching into N-shaped semiconductor layer 32 top layer is narrow, and the cutting output reaming than the cutting after being completed by wafer is large.Utilize RIE that N-shaped semiconductor layer 32 is removed completely, and then a part for the device substrate 31 of its below is removed.After etching, resist is removed.Like this, by by two moment in stage scribe area, thereby by light-emitting component 3(chip) side step shape ground form.
(manufacture of light-emitting component: the formation of electrode)
On p-type semiconductor layer 34, form optically transparent electrode 4(S14), form the pad electrode 51, the 52(S15 that are connected with N-shaped semiconductor layer 32, p-type semiconductor layer 34 respectively).Particularly, first form the electroconductive oxide film of optically transparent electrode 4 by sputtering method film forming on whole of wafer.The mask that forms the shape corresponding with the flat shape (with reference to Fig. 2 (a)) of the p-type semiconductor layer 34 below it on electroconductive oxide film, utilizes etching that the electroconductive oxide film of the part that is not formed with mask is removed and on p-type semiconductor layer 34, formed optically transparent electrode 4 and resist (mask) is removed.Then, the region of the region of the formation p pad electrode 52 on optically transparent electrode 4 and the formation n pad electrode 51 above the N-shaped semiconductor layer 32 exposing forms respectively the mask with peristome, utilize sputtering method on this mask by after metal electrode material film forming, resist is removed to (peeling off).As mentioned above, form n pad electrode 51 and p pad electrode 52.
(manufacture of light-emitting component: the formation of diaphragm and dielectric film)
Form diaphragm 6(S16) time form dielectric film 7(S20).Particularly, first on whole of wafer, utilize sputtering method or CVD(chemical vapor deposition method) formation SiO 2deng the film of inorganic matter.Then, on inorganic matter film, be formed on the mask on pad electrode 51,52 6h of bonding pad opening portion separately with peristome, by the inorganic matter film etching of exposing from this peristome and resist is removed.Thus, be dielectric film 7 at whole the formation diaphragm 6(except the 6h of bonding pad opening portion of wafer in scribe area), complete the making of wafer.
(singualtion of light-emitting component)
From the back side of the wafer made, device substrate 31 is ground and cuts (grinding back surface) and be processed into desirable thickness (S31) compared with unfertile land.Along scribe area center line utilization cutting etc., wafer after cutting being ground in this back side cuts apart (S32) and becomes each light-emitting component 3(chip).Form the side step shape of the light-emitting component 3 obtaining, so utilize nitride-based semiconductor 30 that dielectric film 7 covers side with and the top of the device substrate 31 of below.
(assembling of light-emitting device)
At the light-emitting component 3(chip of the lead-in wire electrode 121,122 of the mounting negative, positive of wiring substrate 1) regulation region apply respectively Ag cream, press from the upper side light-emitting component 3 heating, Ag cream is solidified, light-emitting component 3 is fixed on to (S41) on wiring substrate 1.Ag cream after heating and solidifying becomes attachment 8.
Then, utilize ink jet method discharge conductive ink and carry out sintering along the flat shape (should form the region of chip distribution 21,22) of the chip distribution 21,22 shown in the middle double dot dash line of Fig. 2 (a), form chip distribution 21,22(S42).In the present embodiment, the flat shape of chip distribution 21,22 is the wire parallel with the length direction (with reference to Fig. 1, x direction) of wiring substrate 1, and position is consistent with Width center, make banded wiring substrate 1 mobile while discharge conductive ink along its length so ink jet head is fixed, can operability form well.But, chip distribution 21 with 22 also can with under viewed in plan on the length direction of wiring substrate mode vertical in fact or that there is inclination angle form.Thus, chip distribution 21 and 22 can be avoided the bending stress that wiring substrate 1 or light-emitting device 3 are applied.In addition, due to the side step shape of light-emitting component 3 form, even so conductive ink is discharged to vertical below, also can be in the side of light-emitting component 3 (surface of dielectric film 7) adhere to the conductive ink of adequate thickness.
In addition, also can make ink jet head tilt and oliquely downward discharge conductive ink towards the side of light-emitting component 3.Thus, even if the thickness of light-emitting component 3 (chip is thick) is larger, or there is no step in side but smooth vertical plane, easily adhere to fully conductive ink in above-mentioned side yet.
Light-emitting component 3 on wiring substrate 1 and periphery (with reference to Fig. 1) thereof with mode that light-emitting component 3 and chip distribution 21,22 are covered completely roughly hemispherical apply translucent resin material and make it be solidified to form seal member 9(S43).Thus, as shown in Figure 1, four light-emitting components 3 that sealed one by one parts 9 seal are supported by banded wiring substrate 1 and the light-emitting device 10 that becomes row and link.
The light-emitting component 3 carrying on the light-emitting device 10 of the first execution mode also can utilize the etching for the second time of the scribe area of wafer (to remove N-shaped semiconductor layer 32, S13) or and then utilize etching for the first time (N-shaped semiconductor layer 32 to be exposed, S12) be etched into band shape, be formed as the inclined plane (with reference to the 4th execution mode shown in Fig. 7) that side broadens downwards.In addition, light-emitting component 3 is at singualtion operation S30(S32) in utilize the riving property of device substrate 31 to cut apart, be formed as cutting off of device substrate 31 inclined plane (not shown) broadening that faces down.By forming such side view, even if conductive ink is discharged below vertically to the also conductive ink of the easy side attachment adequate thickness at light-emitting component 3 at 21,22 o'clock at formation chip distribution.
In addition, the light-emitting device 10 of the first execution mode also can have the multilayer film (not shown) that two or more dielectric films different refractive index is replaced to lamination at the bottom surface of light-emitting component 3 (back side).By such formation, light-emitting device 10 makes the light multipath reflection penetrating from the luminescent layer of light-emitting component 3 (active layer 33) downwards and can improve the taking-up efficiency of light.Multilayer film can be formed in for example back side of light-emitting component 3 and grinds (with reference to the 3rd execution mode described later) on the device substrate 31 of cutting after (S31).
As described above, the light-emitting device of the first execution mode is almost directly suitable for known wire-bonded corresponding light-emitting component and wiring substrate is installed, and can connect without bonding wire.Thus, particularly also can be difficult for broken string being suitable for there is flexual wiring substrate in the situation that, can improve reliability.And, light-emitting device is different from the formation that bonding wire arcuation is arranged, only be arranged on side of light-emitting component etc. via film (dielectric film) due to distribution, even so comprise distribution and also can be and the size of light-emitting component same degree, miniaturization, slimming are easy.
(the second execution mode)
The light-emitting device of first embodiment of the invention and the diaphragm of light-emitting component form the dielectric film that covers side.But, in the present invention, give the dielectric film of optical effect by use, can be formed as the light-emitting device that the extraction efficiency of light is improved.Below, with reference to Fig. 4, the light-emitting device of second embodiment of the invention is described.For the identical mark of the element annotation identical with the light-emitting device of the first execution mode and description thereof is omitted.
The light-emitting device 10A of second embodiment of the invention is except as light source element mounted 3A, identical with the formation of the light-emitting device 10 of the first execution mode.; light-emitting device 10A loads light-emitting component 3A as illustrated in fig. 4 on wiring substrate 1; by chip distribution 21,22, a pair of pad electrode above 51,52 is connected respectively to the lead-in wire electrode 121,122 of the negative, positive of wiring substrate 1; in addition; utilize seal member 9(in Fig. 4, to omit diagram; with reference to Fig. 1, Fig. 2 (b), the later profile of the 3rd execution mode is too) by light-emitting component 3A and peripheral sealing thereof.As described below, the diaphragm 6 that light-emitting component 3A covers except side view, by surface (above, side) and the formation difference of dielectric film 7A, identical with the formation of the light-emitting component 3 of the first execution mode.That is, the entirety of light-emitting device 10A forms identical with the formation shown in Fig. 1, above light-emitting component 3A as shown in Figure 2 (a) shows.
(light-emitting component)
In light-emitting component 3A, it is identical with the formation of light-emitting component 3 that semiconductor construction (device substrate 31, nitride-based semiconductor 30) and electrode form (optically transparent electrode 4, pad electrode 51,52), so description thereof is omitted.Light-emitting component 3A is in light-emitting device 10A; except the 6h(of bonding pad opening portion is with reference to Fig. 2 (a)) the film of insulating properties inorganic matter is covered above and the aspect of side identical with the first execution mode, but there is the diaphragm 6 above only covering and possess cover aspect the dielectric film 7A that the multilayer film of side constructs different from the first execution mode.And then as shown in Figure 4, the mode broadening downwards with four sides (representing in the drawings two sides) in light-emitting component 3A is formed slopely.By forming such side view, forming chip distribution 21,22 o'clock, even conductive ink is discharged to vertical below, also can be in the side of light-emitting component 3A (dielectric film 7A surface) adhere to the conductive ink of adequate thickness.
(dielectric film)
The dielectric film 7 of dielectric film 7A and the first execution mode is similarly inorganic matter, by alternately lamination and forming of two kinds of different refractive index dielectric films.On dielectric film 7A by the multilayer film structure such, form chip distribution 21,22, penetrate to the side of light-emitting component 3A and by the light of chip distribution 21,22 reflections reverse advancing and by the boundary reflection of multilayer film in dielectric film 7A, in dielectric film 7A, carry out multipath reflection and change course, finally more avoid chip distribution 21,22 and to the external irradiation of light-emitting device 10A.
In addition, light-emitting device 10A in light-emitting component 3A can by dielectric film 7A only cover be provided with the two sides of chip distribution 21,22 and by diaphragm 6(monofilm) with above similarly cover remaining two sides, also these two sides can be formed vertically.But, in light-emitting device 10A, for the luminous intensity in exit facet (surface of sealing resin) is approached equably, four sides of light-emitting component 3A are all formed as to inclined plane and cover dielectric film 7A for well.In addition, dielectric film 7A is in order further to improve optical effect, and more the side of covering luminous element 3A, for well, in the example shown in Fig. 4, is covered to lower end and covers by whole side.Like this; the film that the side of light-emitting component 3A and the entirety except the 6h of bonding pad opening portion are above insulated film 7A and the such inorganic matter of diaphragm 6 covers; thereby, in light-emitting device 10A, can make resin (seal member 9) not contact nitride-based semiconductor 30 and device substrate 31.Thus, can further suppress the deteriorated of the resin (seal member 9) that caused by heat and photoconduction, improve durability.In addition, be not limited to such formation, also can as the dielectric film of the light-emitting device of the first execution mode 10 7, make the bottom of device substrate 31 expose.
The dielectric film that forms multilayer film and be dielectric film 7A respectively with the dielectric film 7(diaphragm 6 of the first execution mode) similarly, use known insulating material as the diaphragm of semiconductor element.Although the light wavelength territory of also sending based on light-emitting component 3A, for example, as low-index material, enumerates SiO 2, MgF 2, as high-index material, enumerate TiO 2, Ta 2o 5, Nb 2o 5, ZrO 2, Si 3n 4.The number of plies of dielectric film 7A is not construed as limiting, but because light is difficult for entering low-index material and easily at boundary reflection from high-index material, so have one group above from light-emitting component 3A side () with the group of the sequential laminating of low-index material/high-index material.In addition, dielectric film 7A also can consist of the two or more material lamination that refractive index is approached at least one party's of low-refraction, high index of refraction layer, can also be with the above different multilayer film of refractive index that forms of three stages.The dielectric film of the dielectric film 7A separately thickness of (individual layer) acts on and more than being preferably 10nm well for the medium as carrying light.In addition, the thickness of dielectric film 7A entirety (gross thickness) is preferably similarly below 10000nm degree with the first execution mode.
(manufacture method of light-emitting device)
The manufacture method of the light-emitting device of second embodiment of the invention, except the formation of side and the formation of dielectric film of the light-emitting component that will carry, can be carried out with the order identical with the manufacture method of the light-emitting device of the first execution mode.Below, with reference to Fig. 3, the manufacture that comprises the light-emitting component that will carry, the manufacture method of the light-emitting device to the second execution mode describes.
(manufacture of light-emitting component: the formation of nitride-based semiconductor, the formation of n side contact regions)
In the manufacture of light-emitting component 3A, similarly on device substrate 31, make the each layer of growth (S11) of nitride-based semiconductor 30 with the first execution mode, by the n side contact regions of this wafer and scribe area etching and make N-shaped semiconductor layer 32 expose (S12).
(manufacture of light-emitting component: chip sides expose)
Further the scribe area of etched wafer makes it reach the prescribed depth of device substrate 31 and nitride-based semiconductor 30 is removed to (S13) completely.At this, the prescribed depth of device substrate 31 is at least at final light-emitting component 3A(chip) in exceed by the degree of depth of the thickness of the device substrate 31 after thin-walled property.Now, scribe area is etched into band shape.By processing in this wise, light-emitting component 3A becomes inclined plane in side in the time being changed into chip by monolithic.In addition, in the formation of follow-up dielectric film 7A, can cover the lower end of described side.
(manufacture of light-emitting component: the formation of electrode)
With the first execution mode similarly, on wafer, form optically transparent electrode 4, p pad electrode 52 and n pad electrode 51(S14, S15).
(manufacture of light-emitting component: the formation of diaphragm and dielectric film)
On whole of wafer, the multilayer film that forms dielectric film 7A is utilized to sputtering method film forming continuously except one deck of the superiors.Multilayer film after film forming is etched and remove completely beyond the scribe area.Then, form the superiors of dielectric film 7A and the dielectric film as diaphragm 6, similarly in this dielectric film (diaphragm 6), the region that becomes the 6h of bonding pad opening portion is removed with the first execution mode and complete the making (S20, S16) of wafer.
(singualtion of light-emitting component)
From the back side of the wafer made, device substrate 31 is ground and cuts (grinding back surface) and be processed into the thickness (S31) of easy cutting compared with unfertile land.Grind the wafer (S32) after cutting along scribe area center line utilization cutting this back side of Equal, further grind and cut device substrate 31 from the back side, in scribe area, not etched device substrate 31 is removed, be formed as a light-emitting component 3A(chip).The light-emitting component 3A obtaining laterally inclined and cover dielectric film 7A(with reference to Fig. 3 in this whole side).
(assembling of light-emitting device)
With the first execution mode similarly, on wiring substrate 1, load light-emitting component 3A(chip), form chip distribution 21,22, utilize seal member 9 that light-emitting component 3A is sealed to form as light-emitting device 10A(S40).
In described manufacture method, the formation (S16) of the formation of dielectric film 7A (S20) and diaphragm 6 is carried out continuously, but is not limited to this, also can form pad electrode 5(S15) before or and then forming optically transparent electrode 4(S14) carry out before.For example, in the operation (S13) of side that forms light-emitting component 3A, after nitride etching semiconductor 30, under the state grinding at the residual resist covering beyond by scribe area, form multilayer film, utilize peeling off of removing based on resist can form the dielectric film 7A that covers scribe area (side of light-emitting component 3A).Now, make etching (S12) that N-shaped semiconductor layer 32 exposes if in the operation (S13) that becomes n side contact regions and the nitride-based semiconductor of scribe area 30 is removed from p-type semiconductor layer 34 once except going to N-shaped semiconductor layer 32.
In the light-emitting device 10A of the second execution mode, light-emitting component 3A can form side vertically as the light-emitting component of the light-emitting device of the first execution mode 10 3, also dielectric film 7A can be covered to such side.In addition, light-emitting device 10A also can with the light-emitting device of the first execution mode 10 similarly, be formed as the structure that dielectric film 7A not exclusively covers the lower end of light-emitting component 3A side, now, also can after singualtion (S32), do not grind the back side (not shown) of haircut optical element 3A.Or light-emitting device 10A, as in the first embodiment explanatorily, also can cover the such multilayer film (not shown) of dielectric film 7A at the bottom surface of light-emitting component 3A (back side).
As described above, the light-emitting device of the second execution mode can similarly make reliability improve with the first execution mode, and in addition, miniaturization, slimming are easy.The dielectric film between chip distribution and light-emitting component is formed as multilayer film by light-emitting device, by making to inject the light multipath reflection of chip distribution, can suppress the inequality of the emergent light that chip distribution causes.
(the 3rd execution mode)
The light-emitting device of first, second execution mode of the present invention is in order to form the dielectric film of side of covering luminous element, need to the fabrication stage of light-emitting component (wafer) deeper etching become the scribe area of side.But, for wafer or be further used as the general wire-bonded that chip completes and install for corresponding light-emitting component, can be assembled into same light-emitting device.Below, with reference to Fig. 5, the light-emitting device of third embodiment of the invention is described.For the identical mark of the element annotation identical with the light-emitting device of first, second execution mode and description thereof is omitted.
As shown in Figure 5, the light-emitting device 10B of third embodiment of the invention taking a pair of pad electrode 51,52 as mode above loads light-emitting component 3B, utilizes chip distribution 21,22 that the lead-in wire electrode 121,122 of the negative, positive of pad electrode 51,52 and wiring substrate 1 is connected on wiring substrate 1.As the following description, light-emitting component 3B not only covers the aspect that side also covers bottom surface except side view with by dielectric film 7B, identical with the formation of the light-emitting component 3A in the second execution mode.The entirety of light-emitting device 10B forms identical with the formation shown in Fig. 1, above light-emitting component 3B as shown in Figure 2 (a) shows.
(light-emitting component)
In light-emitting component 3B, semiconductor construction (device substrate 31, nitride-based semiconductor 30) and electrode (optically transparent electrode 4, pad electrode 51,52) are identical with the formation of light-emitting component 3,3A, so description thereof is omitted.In light-emitting device 10B, light-emitting component 3B and the second execution mode similarly have only cover except the 6h(of bonding pad opening portion is with reference to Fig. 2 (a)) diaphragm 6 above, there is the dielectric film 7B of the multilayer film structure that side and bottom surface are covered.
(dielectric film)
Dielectric film 7B is identical with the dielectric film 7A of the second execution mode, alternately two kinds of different dielectric films of lamination refractive index, and dielectric film material and thickness is separately also identical with the second execution mode.Wherein, preferably can be by the dielectric film of low temperature process CVD film forming.The dielectric film 7B of multilayer film structure is not only located at the side of light-emitting component 3B and is also located at bottom surface, and the light multipath reflection that makes thus the luminescent layer (active layer 33) from this light-emitting component 3B penetrate downwards can further improve the taking-up efficiency of light.Such dielectric film 7B is after waiting light-emitting component 3B singualtion, in side and the back side (bottom surface) film forming and form (at length utilizing manufacture method to describe) integratedly by cutting.In addition, in the light-emitting device 10B of present embodiment, with the second execution mode similarly, utilizing inorganic matter is the whole side of dielectric film 7B covering luminous element 3B and make not touch luminous element 3B of seal member 9, so that further suppresses that the heat of seal member 9 and photoconduction cause is deteriorated, improves durability.
(manufacture method of light-emitting device)
In the manufacture method of the light-emitting device of third embodiment of the invention, make rear formation dielectric film at the light-emitting component (chip) carrying.Below, the manufacture method of the light-emitting device to the 3rd execution mode, together describes with the manufacture of the light-emitting component that will carry with reference to Fig. 6.
As shown in Figure 6, light-emitting device 10B is by following operation manufacture, that is: as arranging on device substrate 31 and connecting the wafer of light-emitting component 3B and the S10A of wafer manufacturing process that manufactures; Wafer is cut apart and is formed light-emitting component 3B(chip) singualtion operation S30; The dielectric film that forms the back side (bottom surface) of covering luminous element 3B and the dielectric film 7B of side forms operation S20A; Light-emitting component 3B is installed on to the assembling procedure S40 of wiring substrate 1.Below, each operation is described.
(manufacture of light-emitting component: the formation of nitride-based semiconductor, the formation that n lateral electrode is used contact area)
In the manufacture of light-emitting component 3B, with first, second execution mode similarly, on device substrate 31, make the each layer of growth (S11) of nitride-based semiconductor 30, the n lateral electrode of this wafer of etching is by contact area and scribe area and make N-shaped semiconductor layer 32 expose (S12).In addition, in the present embodiment, also can not carry out the etching (S13, with reference to Fig. 3) that the nitride-based semiconductor of the scribe area of wafer 30 is removed completely.
(manufacture of light-emitting component: the formation of electrode, the formation of diaphragm)
With the first execution mode similarly, on wafer, form optically transparent electrode 4, p pad electrode 52 and n pad electrode 51(S14, S15).In addition, similarly form the dielectric film as diaphragm 6 with the first execution mode, in this dielectric film by as the 6h(of bonding pad opening portion with reference to Fig. 2 (a)) region remove and form diaphragm 6(S16) complete the making of wafer.
(singualtion of light-emitting component)
Grind from the back side of the wafer made the thickness (S31) of cutting (grinding back surface) device substrate 31 and be machined to easy cutting compared with unfertile land.The wafer (S32) after cutting is ground at center line utilization cutting this back side of Equal along scribe area, forms a light-emitting component 3B(chip).The light-emitting component 3B obtaining utilize the film (diaphragm 6) of insulating properties only cover above the forming surface of the pad electrode 51,52 (, hereinafter referred to as pad electrode forming surface), by cutting the side (end face) of exposing, nitride-based semiconductor 30 and device substrate 31 are exposed.
(formation of dielectric film)
Make pad electrode forming surface towards lower and by light-emitting component 3B(chip) attach to that to have the supporting substrates such as stable on heating adhesive sheet (omitting diagram) of semiconductor element manufacture use upper, separate certain intervals and arrange.Make bottom surface (device substrate 31) towards upper and be fixed on the light-emitting component 3B(chip on supporting substrates) upper, utilize the low temperature process CVD such as ecr plasma CVD to form continuously the multilayer film (S20A) that forms dielectric film 7B.Thus, light-emitting component 3B utilizes dielectric film 7B by bottom surface and side, to expose nitride-based semiconductor 30 and device substrate 31 cover completely.
In addition, also can cut device substrate 31(S31 by being used for grinding) supporting substrates be fitted under the state of pad electrode forming surface of wafer, grind cut after from back side cutting (S32).Thus, light-emitting component 3B(chip after singualtion) because taking bottom surface, (device substrate 31) is fixed on supporting substrates as upper being spaced of cutting quantity that separates cutting, so can be not chip is not changed and pasted and form dielectric film 7B to other supporting substrates.By by the movement of this wafer and chip (grind cut, cutting and dielectric film are to the adhesion of the stickup sheet material of each operation use of film forming and peel off) be suppressed to Min., prevent breakage and improve operability.
(assembling of light-emitting device)
With first, second execution mode similarly, load light-emitting component 3B(chip at wiring substrate 1) (S41), form chip distribution 21,22(S42), by seal member 9 sealed light emitting element 3B(S43), form light-emitting device 10B.
The light-emitting device 10B of the 3rd execution mode replaces the dielectric film 7B that is made up of multilayer film and with the light-emitting device 10 of the first execution mode, the dielectric film of individual layer is similarly set.In addition, in light-emitting device 10B, cover bottom surface because light-emitting component 3B utilizes dielectric film 7B, so device substrate 31 can be both the GaN substrate of conductivity etc., also device substrate 31 can be removed completely.Light-emitting component 3B, for device substrate 31 is removed completely, can replace grinding and cut, for example, by LLO(laser lift-off) device substrate 31 is peeled off from nitride-based semiconductor 30.This is with in the light-emitting device 10 of first, second execution mode, 10A, and the situation that multilayer film is set in the bottom surface of light-emitting component 3,3A is also identical.In addition, light-emitting component 3,3A due to before singualtion (wafer) nitride-based semiconductor of scribe area 30 is removed completely, so by the peeling off of device substrate 31, carry out at the same time singualtion.
In addition, in light-emitting component 3,3A, the in the situation that of forming multilayer film in bottom surface, also can, at singualtion (S32) (grinding of device substrate 31 cut or removed afterwards) formation multilayer film before, can also after singualtion, form.For example, in the light-emitting component 3 that side is vertically formed, after singualtion, the in the situation that of being formed with multilayer film (dielectric film 7B) in bottom surface, not shown at the side of light-emitting component 3 lamination diaphragm 6 and dielectric film 7B().As long as be equipped in this wise the light-emitting component of light-emitting device of the present invention and be provided with from the side the region of the insulation continuous with at least a portion of bottom surface.
As mentioned above, the light-emitting device of the 3rd execution mode and the second execution mode similarly, not only improve reliability, and suppress the luminous inequality that chip distribution causes, and then can improve the taking-up efficiency of light, utilize wire-bonded corresponding light-emitting component (chip) is installed and is easily manufactured.
Light-emitting device 10,10A, the 10B(of described the first～three execution mode are suitably referred to as light-emitting device 10 below) carry there is light-emitting component 3(3A, the 3B of a pair of pad electrode 51,52), but for example also can carry be provided with more than two n side, the each pad electrode of p side large-scale light-emitting component.Such light-emitting device individually forms chip distribution from the surface of pad electrode separately, and the different parts connection on the lead-in wire electrode 121,122 of negative, positive gets final product (not shown).
Be equipped on light-emitting component 3(3A, the 3B of light-emitting device of the present invention) for pad electrode 51,52 do not require for wire-bonded, configuration above of this light-emitting component 3, shape (area), thickness and with the fitting tightly property of lead-in wire, as long as with optically transparent electrode 4, N-shaped semiconductor layer 32 be connected and with being connected with low resistance of chip distribution 21,22.In addition, also can omit p pad electrode 52 and directly connect chip distribution 22 at optically transparent electrode 4.
Above the light-emitting device 10 of described the first～three execution mode carries whole electrodes are located at, facing up of (shadow surface of light) installed corresponding light-emitting component 3, but light-emitting device of the present invention also can carry the light-emitting component of the counter electrode type of electrode that is provided with that is located at light-emitting component above and below.In addition, light-emitting device of the present invention, except light-emitting diode (LED), also can carry for example laser diode (LD) (not shown).
The light-emitting device 10 of above-mentioned execution mode is formed as seal member 9 roughly dome-type, i.e. lens-shaped on wiring substrate 1, but is not limited to this.Light-emitting device yoke also can for example arrange along the frame (framework) of the circle of the encirclement light-emitting component 3 on wiring substrate 1, thereby fills translucent resin material in the inner side of this framework and make it solidify that to form seal member 9(not shown).If the seal member 9 that the formation method based on such forms, can be formed as corresponding to the shape of framework flat shape arbitrarily, can be suitable for low viscous resin material, in this situation, can make surface configuration be formed as plane, also can be formed as concave surface (concavees lens shape).In addition, by forming framework by the high material of reflectivity, the light penetrating from light-emitting component to side is reflected, can be formed as light and take out the high light-emitting device of efficiency.Framework also can first be configured as the shape of this framework, be then attached to wiring substrate 1 above, but preferably with seal member 9 similarly, on wiring substrate 1, be shaped and also directly make it solidify formation with aqueous or paste.It is PPA(polyphthalamide that the material of such framework can be enumerated as the phenolic resins of heat-curing resin, epoxy resin, BT resin, silicones, thermoplastic resin) etc., in order to improve reflectivity, add the white additive such as titanium oxide and be formed as white silicones and be applicable to.
The light-emitting device 10 of above-mentioned execution mode will have flexual film-form FPC and be applicable to wiring substrate 1, but be not limited to this, as long as the encapsulation that can be installed by wire-bonded applicable.For example also can be useful on the base material of writing board shape utilizes metal film to form the COB(Chip on Board of the pattern of lead-in wire electrode) encapsulation.Or the bottom surface that also can be useful in framework is formed with by metal film the ceramic packaging that the surface-mount light-emitting device of the pattern of lead-in wire electrode is used.In addition, light-emitting device 10 is useful in lead-in wire electrode 121,122 the two wiring substrate 1 faced that make negative, positive on the light-emitting component 3 that will carry, but be not limited to this, only also can be configured on a lead-in wire electrode, or on base material, directly engage the formation of light-emitting component.In such light-emitting device, chip distribution also can (dielectric film surface) extend to the region that is provided with lead-in wire electrode from the side of light-emitting component via substrate surface, in addition, also can for example form chip distribution and lead-in wire electrode (with reference to the 4th, the 5th execution mode described later) by conductive ink.
In addition, light-emitting device of the present invention also can be formed as for example in COB encapsulation, arranging the large-scale sheet light emitting apparatus that is equipped with multiple light-emitting components rectangularly.In such light-emitting device, the pad electrode of adjacent light-emitting component connects by chip distribution each other.Light-emitting device of the present invention particularly in the both sides separately of light-emitting component without the space of the joint for bonding wire (connection), be configured to the many light-emitting devices of light quantity of unit are so multiple light-emitting component constrictions can be spaced.
(the 4th execution mode)
As mentioned above, because the lead-in wire electrode of wiring substrate also can be formed by conductive ink, so in light-emitting device of the present invention, can utilize conductive ink and chip distribution to form lead-in wire electrode simultaneously.Below, with reference to Fig. 7, the light-emitting device of four embodiment of the invention is described.To the identical mark of the element annotation identical with the light-emitting device of the first～three execution mode and description thereof is omitted.
As shown in Figure 7, the light-emitting device 10C of four embodiment of the invention is on flat base material 11A, with a pair of pad electrode 51,52 for element mounted 3 above, chip distribution 21A, 22A transmit and arrival base material 11A surface from pad electrode 51,52 sides at light-emitting component 3 respectively, under viewed in plan, extend and arrange to the outside (left and right in Fig. 7) of light-emitting component 3.Chip distribution 21A(22A) become the negative positive lead-in wire electrode 122 of lead-in wire electrode 121(on base material 11A surface).That is, in light-emitting device 10C, chip distribution 21A(22A) and the negative positive lead-in wire electrode 122 of lead-in wire electrode 121() be integrally formed.Light-emitting device 10C for example, for arrange the sheet light emitting apparatus that is equipped with multiple light-emitting components 3 in COB encapsulation, amplifies and represents one of light-emitting component 3 in Fig. 7.
(light-emitting component)
The light-emitting component 3 that is equipped on light-emitting device 10C is except the light-emitting device 10(that is equipped on the first execution mode is with reference to Fig. 2) formation and the part (N-shaped semiconductor layer 32) of side be formed as the formation on inclined plane to be identical structure, to mark identical mark and represent.In such light-emitting component 3 as the first execution mode, explanatorily, utilize secondary etching (removing of N-shaped semiconductor layer 32) of the scribe area of wafer be etched into band shape and manufacture.In addition, light-emitting device 10C also can carry the light-emitting component 3 that side vertically forms as shown in Fig. 2 (b), and light-emitting component 3A, the 3B(of the upper lift-launch of light-emitting device 10A, 10B that can also be mounted in second, third execution mode is not shown).
(base material)
The wiring substrate 1A that is applicable to light-emitting device 10C is made up of with the lead-in wire electrode 121,122 that is formed on its surperficial negative, positive flat base material 11A.Wherein, wiring substrate 1A is being equipped on light-emitting component 3 after the base material 11A of the mother metal of this wiring substrate 1A, together forms the lead-in wire electrode 121,122 of negative, positive with chip distribution 21A, 22A.Base material 11A also can be for similarly having flexual film-form with the base material 11 of the wiring substrate 1 of the first execution mode, but due to chip distribution 21A(22A) and the negative positive lead-in wire electrode 122 of lead-in wire electrode 121() form continuously, so for the border (end below light-emitting component 3) at light-emitting component 3 and base material 11A does not particularly break, be formed as by the on-deformable insulating properties material with intensity to a certain degree.In addition, the low material of light transmittance that the light that base material 11A is sent by light-emitting component 3 and ambient light are difficult to see through is formed as.Particularly, enumerate the resins such as pottery (Al2O3, AlN etc.) or phenolic resins, epoxy resin, polyimide resin, BT resin (bismaleimide triazine resin), polyphthalamide (PPA).
(lead-in wire electrode, chip distribution)
The negative positive lead-in wire electrode 122 of lead-in wire electrode 121(of wiring substrate 1A) and chip distribution 21A(22A) be integrally formed., the negative positive lead-in wire electrode 122 of lead-in wire electrode 121() with chip distribution 21A(22A) together by can with above base material 11A, carry the conductive material that the side of light-emitting component 3 thereon and pad electrode above 51,52 form continuously and form.As such material, same with the chip distribution 21,22 of the light-emitting device 10 of the first execution mode, enumerate conductive ink.
(attachment)
It is upper that light-emitting component 3 is directly bonded on base material 11A by light-emitting device 10C, at this, utilizes the attachment 8A of insulating properties that whole bottom surface is engaged.Or, also can similarly the attachment of conductivity 8 be separated at two places with the light-emitting device of the first execution mode 10 and engage (with reference to Fig. 2 (b)) with base material 11A.Attachment 8A is suitable for the fitting tightly property of (device substrate 31) and base material 11A to the bottom surface of light-emitting component 3 and the good material of thermal diffusivity for well.
(manufacture method of light-emitting device)
The manufacture method of the light-emitting device of four embodiment of the invention, except the shape of the chip distribution that will form, can be carried out with the order identical with the manufacture method of the light-emitting device of the first execution mode.Below, with reference to Fig. 3, the manufacture method of the light-emitting device to the 4th execution mode describes.In addition, because the light-emitting component that will carry is identical with the light-emitting device of the first execution mode, so omit until the manufacture method (S10～S30) of its singualtion.
(assembling of light-emitting device)
On base material 11A, utilize attachment 8A to fix light-emitting component 3(chip) (S41).Then, form chip distribution 21A via the side of light-emitting component 3 at pad electrode 51 from the region of the negative lead-in wire electrode 121 of becoming of base material 11A surface by ink jet method, the side via light-emitting component 3 from pad electrode 52 forms chip distribution 22A(S42 in the region of the positive lead-in wire electrode 122 of becoming of base material 11A surface).This operation can for example make ink jet head move (the base material 11A that is equipped with light-emitting component 3 is moved to the left) from the from left to right of Fig. 7 while discharges conductive ink and carry out.And, omit diagram by seal member 9() sealed light emitting element 3(S43) and form light-emitting device 10C.
The light-emitting device 10C of the 4th execution mode is at the upper light-emitting component 3 that engages of the substrate (substrate being only made up of base material 11) that is not formed with lead-in wire electrode, together be formed with lead-in wire electrode with chip distribution, but also can engage light-emitting component 3 at the substrate surface (not being formed with the region of lead-in wire electrode) of the wiring substrate that is pre-formed leaded electrode., also can be suitable for the lead-in wire of negative, positive interelectrode apart from d than the wiring substrate of the length L of light-emitting component 3 large (d ﹥ L).Now, chip distribution is formed into substrate surface from the side (dielectric film 7 surfaces) of the light-emitting component 3 that is engaged in base material, and then on base material, extends and arrange and arrive (with reference to the 5th execution mode described later) on lead-in wire electrode.
Above, the light-emitting device of the 4th execution mode is suitable for the substrate (base material) that is not provided with distribution, can similarly utilize wire-bonded that corresponding light-emitting component (chip) is installed with the first execution mode and easily manufacture.
(the 5th execution mode)
As mentioned above, the light-emitting component that is equipped on light-emitting device of the present invention is not limited to the formation of the same pad electrode of corresponding light-emitting component being installed with wire-bonded such described in the first execution mode, for example, in order to be more suitable for for example passing through the formation of the chip distribution based on ink jet mode, also can change configuration and shape.In addition, light-emitting device of the present invention also can be useful in the wiring substrate of the specification of side's element mounted of the lead-in wire electrode of negative, positive.Below, with reference to Fig. 8, the light-emitting device of fifth embodiment of the invention is described.To the same mark of the element annotation identical with the light-emitting device of the first～four execution mode, also description thereof is omitted.
As shown in Figure 8, the light-emitting device 10D of fifth embodiment of the invention wiring substrate (substrate) 1B upper with a pair of pad electrode 51A, 52A for loading light-emitting component 3D above, the lead-in wire electrode 121,122 of pad electrode 51A, 52A and the negative, positive of wiring substrate 1B is connected by chip distribution 21,22, in Fig. 8, omitted diagram by seal member 9(, with reference to Fig. 1, Fig. 2 (b)) light-emitting component 3D is sealed.Light-emitting device 10D is for example for be equipped with the light-emitting device of light-emitting component 3D in ceramic packaging, in Fig. 8, is the bottom surface of recess (omitting diagram) and amplify expression using wiring substrate 1B above as the light emitting element storing portion of ceramic packaging.
(wiring substrate)
The wiring substrate 1 that is applicable to wiring substrate 1B and first～three execution mode of light-emitting device 10D is similarly made up of with the lead-in wire electrode 121,122 that forms negative, positive in the above base material 11B.Wherein, as shown in Figure 8, in wiring substrate 1B, at the positive lead-in wire electrode 122 of the whole mounting area configurations of light-emitting component 3D, separate and configure negative lead-in wire electrode 121 at outside and the positive lead-in wire electrode 122 of light-emitting component 3D.In the present embodiment, the chip distribution 21 of n side is not directly connected with negative lead-in wire electrode 121 from the side of light-emitting component 3D, with the light-emitting device 10C(of the 4th execution mode with reference to Fig. 7) chip distribution 21A be similarly formed on the surface of base material 11B.Therefore, chip distribution 21 is in order not break on the border of light-emitting component 3D and base material 11B especially, and base material 11B is preferably similarly formed as by insulating properties material not yielding and that have intensity to a certain degree with the base material 11A of light-emitting device 10C.
(attachment)
Light-emitting device 10D is because the whole bottom surface that makes wiring substrate 1B face light-emitting component 3D is provided with positive lead-in wire electrode 122, so in order to insulate with the chip distribution 21 of n side, engage light-emitting component D by the attachment 8A of insulating properties.As shown in Figure 8, attachment 8A arranges in the mode that further covers the end face that positive lead-in wire electrode 121 lead-in wire electrode 122 and negative is relative from the whole bottom surface of light-emitting component 3D.Attachment 8A and the 4th execution mode are similarly suitable for fitting tightly property and the good material of thermal diffusivity for well.
(light-emitting component)
Light-emitting component 3D is except shape, diaphragm 6 and the dielectric film 7(7A of pad electrode 51A, 52A) formation, with the light-emitting device 10(that is equipped on the first execution mode with reference to Fig. 2) the formation of light-emitting component 3 identical.That is, due to semiconductor construction (device substrate 31, nitride-based semiconductor 30), optically transparent electrode 4 is the formation identical with light-emitting component 3, so omit the explanation of light-emitting component 3D.In addition, the shape of the side of light-emitting component 3D is identical with light-emitting component 3, but with the light-emitting device 10A of the second execution mode similarly, there is light-emitting component 3D and cover diaphragm 6 above, possess the dielectric film 7A of the multilayer film structure that covers side.
The n pad electrode 51A of light-emitting component 3D and p pad electrode 52A (omit and illustrate) respectively the shape that is formed as stretching out to two ends on this light-emitting component 3D.For this part of stretching out is not contacted with nitride-based semiconductor 30; pad electrode 51A, 52A are located at and are formed with on dielectric film 7A and diaphragm 6, via the 6h(of bonding pad opening portion with reference to Fig. 2 (a)) with N-shaped semiconductor layer 32, p-type semiconductor layer 34(optically transparent electrode 4) be connected.; light-emitting component 3D is forming the S14 of optically transparent electrode 4(Fig. 3) afterwards; forming diaphragm 6 and dielectric film 7A, form S16, the S20 of the 6h(Fig. 3 of bonding pad opening portion), form the S15 of pad electrode 51A, 52A(Fig. 3) order manufacture, the light-emitting device 10 of each operation and first, second execution mode, the manufacture method of 10A are identical.
Light-emitting device 10D is due to pad electrode 51A, 52A are formed as to above-mentioned shape, so chip distribution 21,22 is connected with pad electrode 51A, 52A near the periphery on light-emitting component 3D.Chip distribution 21,22 is in the time forming (with reference to the manufacture method of the first execution mode) based on ink jet mode, above light-emitting component 3D, discharge conductive ink hardly, so be suppressed at that light-emitting component 3D adheres to unwanted conductive ink and the situation of blocking emergent light that causes.
The light-emitting device 10D of the 5th execution mode can replace dielectric film 7A and similarly the dielectric film of individual layer 7 and diaphragm 6 is wholely set with the light-emitting device 10 of the first execution mode, or similarly dielectric film 7B is arranged on to bottom surface and the side of light-emitting component 3D with the light-emitting device 10B of the 3rd execution mode.In addition, light-emitting device 10D can utilize the attachment 8A of insulating properties that the light-emitting component of the first～three execution mode 3,3A, 3B are engaged, are equipped on wiring substrate 1B.In addition, the light-emitting component 3D that is equipped on light-emitting device 10D also can be with the light-emitting device 10A(of the second execution mode with reference to Fig. 4) light-emitting component 3A similarly to make side be inclined plane, in addition, light-emitting component 3D also can be as first, the light-emitting device 10 of the 4th execution mode, 10C(be with reference to Fig. 2, Fig. 7) be equipped on wiring substrate 1 and wiring substrate 1A(base material 11A) (not shown).
As mentioned above, the light-emitting device of the 5th execution mode is useful in the wiring substrate of a side mounting light-emitting component of lead-in wire electrode, with the first～three execution mode similarly, can improve reliability, in addition, miniaturization, slimming are easy.Even if light-emitting device forms chip distribution by ink jet mode, because unwanted conductive ink is few to adhering to of light-emitting component, so do not block light irradiation.
(the 6th execution mode)
The light-emitting component of the light-emitting device of above-mentioned the 5th execution mode configures pad electrode near superincumbent periphery, but also can make it arrange and be wholely set with chip distribution to side extension.Below, with reference to Fig. 9, the light-emitting device of sixth embodiment of the invention is described.To the identical mark of the element annotation identical with the light-emitting device of the first～five execution mode and description thereof is omitted.
The light-emitting device 10E of sixth embodiment of the invention at the wiring substrate 1(identical with the light-emitting device 10 of the first execution mode with reference to Fig. 1) upper as light source and element mounted 3E is connected with the lead-in wire electrode 121,122 of negative, positive by be formed at chip distribution (distribution) 21B, the 22B of light-emitting component 3E and attachment 8B, the 8B of conductivity before installation.
As shown in Figure 9, light-emitting component 3E is except shape and the diaphragm 6(dielectric film 7 of side view, pad electrode 51B, 52B) formation, with the light-emitting device 10(that is equipped on the first execution mode with reference to Fig. 2) the formation of light-emitting component 3 identical.At length, light-emitting component 3E (omits diagram) respectively by n pad electrode 51B and p pad electrode 52B and stretches out to two ends above this light-emitting component 3E, so with dielectric film 7 covering side on the chip distribution 21B, the 22B that form be integrally formed continuously.Light-emitting component 3E is only covered and is provided with chip distribution 21B(n pad electrode 51B by dielectric film 7 in side), chip distribution 22B(p pad electrode 52B) region.In addition, in Fig. 9 (a), pad electrode 51B, 52B(chip distribution 21B, 22B) represent outline line by thick dashed line.
Chip distribution 21B, 22B and pad electrode 51B, 52B are integrally formed, and therefore, can say with the chip distribution 21,22 of the light-emitting device of the first～three execution mode and similarly be connected with pad electrode 51B, the 52B of light-emitting component 3E.Such chip distribution 21B, 22B is the film that the metal electrode material that similarly formed by sputtering method etc. with pad electrode 51B, 52B forms, so the resistance of the chip distribution 21,22 being made up of the conductive ink that contains resin as composite material is low, can carefully form (in a narrow margin, thin).In the present embodiment, as shown in Fig. 9 (a), chip distribution 21B, 22B form with the width identical with the diameter of pad electrode 51B, 52B above light-emitting component 3E, but in the side of light-emitting component 3E, width is attenuated, can less not block the light (not shown) that light-emitting component 3E sends.Chip distribution 21B, 22B is preferably formed the shape for guaranteeing to be connected with attachment 8B enough areas of (contact).Like this and pad electrode 51B, 52B chip distribution 21B, 22B one and the light-emitting device 10D(that is equipped on the 5th execution mode are with reference to Fig. 8) light-emitting component 3D similarly, can form diaphragm 6(dielectric film 7) after form.
At this, chip distribution 21B, 22B and pad electrode 51B, 52B side by side form, that is, the state of the wafer of arranging to connect multiple light-emitting component 3E forms in the lump.Therefore, if chip distribution 21B, 22B are from side (x direction) outstanding formation laterally of light-emitting component 3E, light-emitting component 3E guarantees the scribe area more than amount of thickness of chip distribution 21B, 22B, and effective coverage (having the region of the holostrome of nitride-based semiconductor 30) diminishes, and output reduces.Therefore, light-emitting component 3E represents ground with mark hacures in Fig. 9 (a), be defined near the region (comprising) that chip distribution 21B, 22B are set, by nitride-based semiconductor 30(n type semiconductor layer 32) remove, and then the top of device substrate 31 is removed and side form depression, its end face (side) cover dielectric film 7.
In the light-emitting device 10E of present embodiment, because can't help ink jet mode, chip distribution 21B, 22B form, so can not adhere to unwanted conductive ink yet, not by the two sides of light-emitting component 3E (side of the left and right in Fig. 9) integral insulation.The attachment 8B of conductivity removes device substrate 31 in the region that chip distribution 21B, 22B be set enough thickness (degree of depth) for well in the mode that do not contact with the nitride-based semiconductor 30 exposing in the side of light-emitting component 3E.In addition, due to remove in this wise the region of nitride-based semiconductor 30 narrower limit, even so device substrate 31 is removed deeper, also can utilize the back side of the singualtion (S30 of Fig. 3) for light-emitting component 3E to grind to cut etc. to prevent that wafer from isolating.Or, light-emitting component 3E also can be in scribe area by nitride-based semiconductor 30(n type semiconductor layer 32) and the top of device substrate 31 remove, now, plane only sees the region that chip distribution 21B, 22B are set removed to the inside significantly, and the width that makes the scribe area beyond it is compared with narrow and guarantee effective coverage.In addition, in Fig. 9 (b), light-emitting component 3E forms the side (end face) in the region of having removed nitride-based semiconductor 30 vertically, but also can form the depression (part being removed) of widening upward and be formed as banded inclined plane (not shown).
Chip distribution 21B, 22B form while manufacture due to wafer before singualtion, so do not arrive the bottom of device substrate 31, end face that singualtion is exposed.This is due to for light-emitting component 3E singualtion being ground from the back side while cutting device substrate 31, grinds and cuts height (degree of depth) position that is formed with chip distribution 21B, 22B, and chip distribution 21B, 22B can peel off.In addition, metal film is that chip distribution 21B, 22B are difficult to together cut apart with device substrate 31 and nitride-based semiconductor 30 (cutting, disrumpent feelings), so as shown in Fig. 9 (a), under viewed in plan, not arriving the end (limit) of light-emitting component 3E and be formed at inner side, is preferred in productivity viewpoint.Therefore, light-emitting device 10E is in order to be installed on wiring substrate 1 by such light-emitting component 3E, make the attachment 8B of the conductivity such as scolder form the fillet erecting from the end aspect-oriented of light-emitting component 3E, with below light-emitting component 3E and chip distribution 21B, the 22B of side (end face) certain distance be connected.In other words, light-emitting device 10E makes chip distribution 21B(22B) extend to the left side (right side) of light-emitting component 3E integratedly and arrange and form the lead-in wire electrode 122 positive with negative lead-in wire electrode 121(with attachment 8B) distribution that is connected.And light-emitting device 10E installs to wiring substrate 1 in (assembling procedure S40, with reference to Fig. 3) at light-emitting component 3E, engages (S41) and be connected (S42) by an operation.The installation that utilizes an operation is like this installed identical with flip-chip, but due to light-emitting component 3E make chip distribution 21B, the 22B suitable with pad electrode not in below (installed surface) be located at relative two sides and be spaced from each other interval, so such precision is installed without flip-chip in the aligned in position of wiring substrate 1.
The attachment 8B that the light-emitting device 10E of the 6th execution mode can not use conductivity connects light-emitting component 3E to the lead-in wire electrode 121,122 of negative, positive, or not only further forms the distribution of the such use conductive ink of the chip distribution 21,22 of light-emitting device 10 etc. of the first execution mode based on attachment 8B.In addition; in the manufacture of light-emitting component 3E; chip distribution 21B, 22B and pad electrode 51B, 52B are not formed, are forming pad electrode 51,52(51B, 52B) and diaphragm 6(dielectric film 7) afterwards, again utilize the formation that overlap such as sputtering method on pad electrode 51,52.In addition, light-emitting device 10E also can replace dielectric film 7 and covering dielectric film 7A(multilayer film in the side of light-emitting component 3E).Or light-emitting device 10E also can cover dielectric film (multilayer film) (not shown) in the bottom surface of light-emitting component 3E.Now, if the light-emitting component 3E(chip after singualtion) form dielectric film from the back side, owing to also covering chip distribution 21B, the 22B of side, so (wafer) forms dielectric film before singualtion.
Be equipped on the 6th execution mode light-emitting device 10E light-emitting component 3E be equipped on the first execution mode light-emitting device 10 light-emitting component 3 grades similarly, by bottom surface and the bottom insulation of continuous side from bottom surface.Therefore, also can be if the light-emitting device 10D(of the 5th execution mode is with reference to Fig. 8), by the attachment 8A of the insulating properties lead-in wire electrode 122 positive with wiring substrate 1B() engage, connected by chip distribution 21,22.In addition, light-emitting component 3E can also be if the light-emitting device 10C(of the 4th execution mode is with reference to Fig. 7) be equipped on wiring substrate 1A(base material 11A).
As mentioned above, the light-emitting device of the 6th execution mode can similarly make reliability improve with the first～five execution mode, and in addition, miniaturization, slimming are easy.In addition, light-emitting device is by chip distribution and pad electrode are integrally formed and without appending in the mill operation.In addition, by being the metal film same with pad electrode, can form in a narrow margin to excellent conductivity.By chip distribution is formed in a narrow margin, can reduce the emergent light of the light-emitting component being blocked by chip distribution.And then light-emitting device is owing to being formed with chip distribution before installing light emitting element, so the process number of assembling is few.
The light-emitting device printing conductive ink of above-mentioned the first～five execution mode and form chip distribution, in addition, the light-emitting device of the 6th execution mode forms chip distribution by vapour deposition method, sputtering method, but except these methods, as long as it is applicable to cover conductive material with desirable shape in the side of light-emitting component 3.Particularly, as the material of chip distribution, except conductive ink and steaming film the metal forming of enumerating plated film or being attached by bonding agent.
Above, to light-emitting device of the present invention, to being illustrated for implementing mode of the present invention, but the invention is not restricted to above-mentioned execution mode, the formation of obviously having carried out various changes, change etc. based on above-mentioned record is also contained in purport of the present invention.

Claims (14)

1. a light-emitting device, comprising:
Flexible substrate, it has negative lead-in wire electrode and positive lead-in wire electrode in the above;
Light-emitting component, it has negative electrode and positive electrode in the above;
Dielectric film, it is formed on the side of described light-emitting component;
Distribution, its formation of joining on described dielectric film, will connect between described negative electrode and described negative lead-in wire electrode or between described positive electrode and described positive lead-in wire electrode.
2. light-emitting device as claimed in claim 1, wherein,
Described light-emitting component is crossed over described negative lead-in wire electrode and positive lead-in wire electrode and is arranged.
3. light-emitting device as claimed in claim 1 or 2, wherein,
Described dielectric film forms with roughly uniform thickness in the side of described light-emitting component.
4. the light-emitting device as described in any one in claim 1～3, wherein,
The connecting portion of described negative lead-in wire electrode or described positive lead-in wire electrode and described distribution is in the position of lower end that approaches described light-emitting component side.
5. the light-emitting device as described in any one in claim 1～4, wherein,
Described dielectric film is made up of inorganic matter.
6. the light-emitting device as described in any one in claim 1～5, wherein,
Described dielectric film is the multilayer film that two or more dielectric film laminations different refractive index is formed.
7. a light-emitting device, wherein, comprising:
Flexible substrate;
Negative lead-in wire electrode, it has multiple the first extension electrodes that the first linking part and one end separately and described the first linking part link, and be formed on described substrate above;
Positive lead-in wire electrode, it has multiple the second extension electrodes that the second linking part and one end separately and described the second linking part link, and with this second extension electrode with the interval of regulation and the mode of described the first extension electrode adjacency be formed on described flexible substrate above;
Multiple light-emitting components, it has respectively positive electrode and negative electrode in the above, is connected with respectively negative electrode at the first extension electrode, is connected with respectively positive electrode at described the second extension electrode;
Dielectric film, it is respectively formed at the side of described multiple light-emitting components;
Multiple distributions, it is respectively formed on described dielectric film, will between described positive electrode and described the first extension electrode or between described negative electrode and described the second extension electrode, connect respectively.
8. light-emitting device as claimed in claim 7, wherein,
Described flexible substrate is the rectangular shape with minor face and long limit, described light-emitting component the above-listed shape of length direction of described flexible substrate arrange.
9. a light-emitting device, wherein, comprising:
Substrate;
Negative lead-in wire electrode, it has multiple the first extension electrodes that the first linking part and one end separately and described the first linking part link, and be formed on described substrate above;
Positive lead-in wire electrode, it has multiple the second extension electrodes that the second linking part and one end separately and described the second linking part link, with this second extension electrode with the interval of regulation and the mode of described the first extension electrode adjacency be formed on described substrate above;
Multiple light-emitting components, it has respectively positive electrode and negative electrode in the above, crosses over respectively described the first extension electrode and the second extension electrode and arranges;
Dielectric film, it is respectively formed at the side of described light-emitting component;
Distribution, it is respectively formed on described dielectric film, will between described negative electrode and described the first extension electrode or between described positive electrode and described the second extension electrode, connect respectively.
10. light-emitting device as claimed in claim 9, wherein,
Described substrate is flexible substrate.
11. light-emitting devices as described in any one in claim 7～10, wherein,
Described dielectric film respectively in the side of described light-emitting component with roughly uniformly thickness form.
12. light-emitting devices as described in any one in claim 7～11, wherein,
The connecting portion of described the first extension electrode or described the second extension electrode and described distribution is positioned at respectively the position of the lower end that approaches described light-emitting component side.
13. light-emitting devices as described in any one in claim 7～12, wherein,
Described dielectric film is made up of inorganic matter respectively.
14. light-emitting devices as described in any one in claim 7～13, wherein,
Described dielectric film is respectively the multilayer film that two or more dielectric film laminations different refractive index is formed.
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