JP4411695B2 - Nitride semiconductor light emitting device - Google Patents

Nitride semiconductor light emitting device Download PDF

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JP4411695B2
JP4411695B2 JP21360699A JP21360699A JP4411695B2 JP 4411695 B2 JP4411695 B2 JP 4411695B2 JP 21360699 A JP21360699 A JP 21360699A JP 21360699 A JP21360699 A JP 21360699A JP 4411695 B2 JP4411695 B2 JP 4411695B2
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electrode
nitride semiconductor
conductor
protective film
insulating protective
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JP2001044498A (en
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稔生 小牧
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Nichia Corp
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Nichia Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body

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Description

【０００１】
【発明の属する技術分野】
本発明は、ｎ型及びｐ型窒化物半導体層を備えた、チップタイプの窒化物半導体発光素子に関する。
【０００２】
【従来の技術】
近年、窒化物化合物半導体を用いた発光素子が、青色系の発光が可能な発光素子として注目されている。この窒化物化合物半導体を用いた発光素子は、サファイヤ基板上にｎ型窒化物半導体層を成長させ、そのｎ型窒化物半導体層上に直接又は発光層を介してｐ型窒化物半導体層を成長させた層構造を有する。また、絶縁体であるサファイア基板を用いて構成される窒化物半導体発光素子では、導電性の半導体基板を用いて構成される他の発光素子とは異なり、正電極及び負電極が同一面側の半導体層上に形成される。すなわち、ｐ側の正電極はｐ型窒化物半導体層上に形成され、ｎ側の負電極は、所定の位置で、ｐ型窒化窒化物半導体層（発光層を備えたものでは発光層も含む）をエッチングにより除去してｎ型窒化物半導体層の上面を露出させて形成される。
【０００３】
このように、窒化物半導体発光素子では、通常、同一面側に正負の電極が形成されているので、正負の電極間の短絡を防止するために正負の電極の取り出し部分（実装基板の電極との接続部分）を除いて絶縁保護膜が形成され、電極面を上又は下にして実装基板に実装されて使用される。
【０００４】
【発明が解決しようとする課題】
しかしながら、従来の窒化物半導体発光素子は、電極面を下にして実装基板にフリップチップボンディングする場合、同一面側に形成された正負の電極間に例えばハンダ等の導電性接着剤がはみ出して電極間を短絡させることがあるという問題があった。そのために、製造時に正負の電極間の短絡を防止するため、導電性接着剤の量等を厳しく管理する必要があり製造コストを上昇させる原因にもなっていた。
【０００５】
そこで、本発明は、製造時（フリップチップボンディング時）において電極間の短絡を効果的に防止できる構造を有する窒化物半導体発光素子を提供することを目的とする。
【０００６】
【課題を解決するための手段】
以上の目的を達成するために、本発明に係る窒化物半導体発光素子は、透光性基板上に形成されたｎ型窒化物半導体層と、該ｎ型窒化物半導体層上に互いに分離されて設けられたｎ電極とｐ型窒化物半導体層と、上記ｐ型窒化物半導体層の一部に設けられたｐ電極と、上記ｎ電極及びｐ電極の各上面の開口部分を除き上記各半導体層及び上記各電極を覆うように設けられた絶縁保護膜とを備えた窒化物半導体発光素子において、上記ｐ電極上の上記開口部分外側の上記絶縁保護膜上に上記ｐ電極と導通する第１導体を形成し、上記ｎ電極上の上記開口部分外側の上記絶縁保護膜上に上記ｎ電極と導通する第２導体を形成し、上記ｐ電極は、上記ｐ型窒化物半導体層上のほぼ全面に形成された全面電極と該全面電極の一部に形成されたｐパッド電極とからなり、上記絶縁保護膜において上記ｐパッド電極上に上記開口部分が形成され、かつ上記第１導体と上記第２導体との間隔を、上記ｐパッド電極と上記ｎ電極の間隔に比較して大きくしたことを特徴とする。
このように構成することにより、外側に延在した第１導体と第２導体とによって、フリップチップボンディング時に溶けたハンダを外側に誘導することができるので、ｐ電極とｎ電極の間への溶けたハンダのはみ出しを抑制でき、ｐ電極とｎ電極間の短絡を防止できる。
【０００７】
また、本発明に係る窒化物半導体発光素子において、上記第１導体と上記第２導体を窒化物半導体素子の周辺部以外の上記絶縁保護膜上に形成し、上記絶縁保護膜を該周辺部において露出させるようにしてもよい。
【０００８】
さらに、本発明に係る他の窒化物半導体発光素子は、透光性基板上に形成されたｎ型窒化物半導体層と、該ｎ型窒化物半導体層上に互いに分離されて設けられたｎ電極とｐ型窒化物半導体層と、上記ｐ型窒化物半導体層の一部に設けられたｐ電極と、上記ｎ電極及びｐ電極の各上面の開口部分を除き上記各半導体層及び上記各電極を覆うように設けられた絶縁保護膜とを備えた窒化物半導体発光素子において、上記ｐ電極上の上記開口部分外側の上記絶縁保護膜上に上記ｐ電極と導通する第１導体を形成し、上記ｎ電極上の上記開口部分外側の上記絶縁保護膜上に上記ｎ電極と導通する第２導体を形成し、上記第１導体と上記第２導体を窒化物半導体素子の周辺部以外の上記絶縁保護膜上に形成し、上記絶縁保護膜を該周辺部において露出させたことを特徴とする。
【０００９】
【発明の実施の形態】
（発明の実施の形態１）
以下、図面を参照して本発明に係る実施の形態１の窒化物半導体発光素子について説明する。
本実施の形態１の窒化物半導体発光素子は、透光性基板であるサファイア基板１を用いて構成され、そのサファイア基板１を介して光を出力するようにした、いわゆる基板側発光の発光素子であって以下のような特徴を有する。
すなわち、本実施の形態１の窒化物半導体発光素子は、図１に示すように、
（１）ｐパッド電極５上の第１開口部７ｂの外側に位置する絶縁保護膜７上に延在させてｐパッド電極５と導通する第１導体１０を形成し、
（２）ｎ電極６上の第２開口部７ａの外側に位置する絶縁保護膜７上に延在させてｎ電極６と導通する第２導体１１を形成した点が従来例とは異なり、
これによって、フリップチップ実装した時のｐ電極とｎ電極との間の短絡を防止するようにしたものである。
以下、本実施の形態１の窒化物半導体発光素子について詳細に説明する。
【００１０】
本実施の形態１の窒化物半導体発光素子において、ｎ型窒化物半導体層２はサファイア基板１のほぼ全面に形成される。
また、ｎ電極６とｐ型窒化物半導体層３とは互いに分離されてｎ型窒化物半導体層２上に形成される。
具体的には、ｎ型窒化物半導体層２上にｐ型窒化物半導体層を形成した後、ｎ電極６を形成する領域のｐ型窒化物半導体層をエッチング等により除去してｎ型窒化物半導体層２の表面の一部を露出させた後、その露出させたｎ型窒化物半導体層２の表面にｐ型窒化物半導体層３と電気的に分離されるようにｎ電極６を形成する。
【００１１】
また、ｐ電極８はｐ型窒化物半導体層３のほぼ全面に形成された全面電極４と、その全面電極４の一部の表面に形成されたｐパッド電極５とによって構成される。尚、ｐパッド電極５は、ｎ電極６と可能な限り離して形成することが好ましい。
絶縁保護膜７は、上述のように形成された各半導体層及び各電極を覆うように形成され、その絶縁保護膜７において、ｐパット電極５上に第１開口部７ｂが形成され、ｎ電極６上に第２開口部７ａが形成される。
【００１２】
そして、本実施の形態１の窒化物半導体発光素子ではさらに、第１開口部７ｂでｐパット電極５と導通しかつ第１開口部７ｂの外側に位置する絶縁保護膜７上に延在する第１導体１０が形成され、第２開口部７ａでｎ電極６と導通しかつ第２開口部７ａの外側に位置する絶縁保護膜７上に延在する第２導体１１が形成される。
【００１３】
ここで第１導体１０は、以下の条件▲１▼ないし▲４▼の条件を満足するように選定される。すなわち、▲１▼ｐパッド電極５及び絶縁保護膜７との接着力が強いこと、▲２▼半田または導電性ペーストとの接着力が長期間にわたり維持されること、▲３▼抵抗値が低いこと、および▲４▼本発光素子が動作中に第１の導体がイオンマイグレーション現象によって絶縁保護膜７の欠陥を貫通してｎ半導体に短絡することが少ないこと、である。これらを満足するために、第１導体１０は１層または複数層の金属膜で構成される。成膜方法は上記特性を満足するような既存の方法を使用する。
【００１４】
また第１導体１０は、Ｔｉ、Ｃｒ、Ａｌ、Ｚｒ、Ｍｏ、Ｗ、Ｈｆ、又はＮｉを主成分とする金属又はそれらの合金をまず成膜し、その後Ａｕ、Ｎｉ、又はＰｔを主成分とする金属又はそれらの合金を成膜することによって作成される。実施例においては、Ｔｉをまず成膜し、その後Ｐｔ、さらにＡｕを最終層として成膜している。別の実施例においては、Ｃｒをまず成膜し、その後その後Ｐｔ、さらにＡｕを最終層として成膜している。
【００１５】
そして第２導体１１は、以下の▲１▼ないし▲３▼の条件を満足するように選定される。すなわち、▲１▼ｎパッド電極及び絶縁保護膜７との接着力が強いこと、▲２▼半田または導電性ペーストとの接着力が長期間にわたり維持されること、および▲３▼抵抗値が低いこと、である。これらを満足するために、第２導体１１は１層または複数層の金属膜で構成される。成膜方法は上記特性を満足するような既存の方法を使用する。
【００１６】
また第２導体１１は、Ｔｉ、Ｃｒ、Ａｌ、Ｚｒ、Ｍｏ、Ｗ、Ｈｆ、又はＮｉを主成分にする金属、又はそれらの合金をまず成膜し、その後Ａｕ、Ｎｉ、又はＰｔを主成分にする金属、又はそれらの合金を成膜することによって作成される。実施例においては、Ｔｉをまず成膜し、その後Ｐｔ、さらにＡｕを最終層として成膜している。別の実施例においては、Ｃｒをまず成膜し、その後その後Ｐｔ、さらにＡｕを最終層として成膜している。
【００１７】
尚、第１導体１０および第２導体１１は、同じ層構成であることが製造上望ましい。
【００１８】
以上のように構成された実施の形態１の窒化物半導体発光素子は、図２に示すように、例えば、正の電極２２と負の電極２１とが所定の間隔を隔てて形成された実装基板２０上に、正の電極２２と第１導体１０とが対向しかつ負の電極２１と第２導体１１とが対向するように載置され、対向する導体と電極間がそれぞれハンダ３１，３２で接合されて、いわゆるフリップチップ実装される。
【００１９】
以上のようにフリップチップ実装される本実施の形態１の窒化物半導体発光素子は、第１開口部７ｂ外側の絶縁保護膜７上に延在する第１導体１０と、第２開口部７ａ外側の絶縁保護膜７上に延在する第２導体１１が形成されているので、図２に示すようにフリップチップ実装されるときに、溶けたハンダ３１，３２が外側に延在する第１導体１０と第２導体１１によって外側に誘導されて、第１導体１０（ｐパッド電極５）と第２導体１１（ｎ電極６）との間のハンダの量を少なくすることができる。
これによって、本実施の形態１の窒化物半導体発光素子は、ｐパッド電極５とｎ電極６との間の短絡を効果的に防止することができる。
【００２０】
これに対して従来の窒化物半導体発光素子では、図３に示すように、半導体層及び電極を覆う絶縁保護膜７０に形成された第１開口部７ｃ及び第２開口部７ｄを介してｐパッド電極５及びｎ電極６をそれぞれ、実装基板２０に形成された正電極２４及び負電極２３に対向させて接続する。このように実装される従来例の窒化物半導体発光素子において、実装時に溶けたハンダ３３，３４はｐパッド電極５及びｎ電極６の外側と内側（ｐパッド電極５とｎ電極６の間）の両側にほぼ均等にはみ出す。
従って、従来例の窒化物半導体発光素子では、フリップチップ実装した時に、ｐパッド電極５とｎ電極６の間にはみ出すハンダ量が比較的多くなり、ｐパッド電極５とｎ電極６とを短絡させることがある。
【００２１】
また、以上の実施の形態１の窒化物半導体発光素子は、第１導体１０と第２導体１１の内側の側面（互いに対向する側面）がそれぞれ、ｐパッド電極５とｎ電極６の内側の側面（互いに対向する側面）より外側に位置するようにしている。
このようにすることで、ｐパッド電極５とｎ電極６の内側の側面間の間隔に比較して、第１導体１０と第２導体１１の内側の側面間の間隔を大きくできるので、より効果的にｐ側とｎ側の短絡を防止できる。
【００２２】
以上の実施の形態の窒化物半導体発光素子では、サファイア基板１の対向する２つの辺に沿って互いに平行なｐパッド電極５とｎ電極６を形成するようにしたが、本発明はこれに限定されるものではなく、サファイア基板１の１つの対角線の隅部にｐパッド電極５とｎ電極６を形成するようにしてもよい。
【００２３】
また、本実施の形態１の窒化物半導体発光素子では、ｎ型窒化物半導体層２とｐ型窒化物半導体層３とを形成した例で示したが、本発明はこれに限られるものではなく、ｎ型窒化物半導体層２とｐ型窒化物半導体層３の間にさらに活性層を形成するようにしてもよい。
さらに、ｎ型窒化物半導体層２とｐ型窒化物半導体層３はそれぞれ１層の半導体層で示したが、本発明はこれに限られるものではなく、ｎ型窒化物半導体層２とｐ型窒化物半導体層３をそれぞれ複数の層で構成してもよい。
【００２４】
（発明の実施の形態２）
次に、第１導体１０’及び第２導体１１’を図４のように形成すること以外、本実施の形態１と同様の窒化物半導体発光素子を形成する。すなわち、第１導体１０’及び第２導体１１’がチップ周辺部において絶縁保護膜７を完全覆うのではなく、絶縁保護膜７がわずかに露出するように、第１導体１０’及び第２導体１１’を形成する。本発明の実施の形態１のように、第１導体１０及び第２導体１１がチップ周辺部において絶縁保護膜７を完全覆う場合、ダイシング又はスクライビングにより分離される前のウェハー状態にある各チップが、金属薄膜である第１導体１０及び第２導体１１を介して隣接チップと結合することになり、分離作業が困難となる傾向にある。これを防止すべく、本発明の実施の形態２のように、各チップを１つ１つに分離しやすくするために、第１導体１０’及び第２導体１１’がチップ周辺部において互いに分離して形成されることが望ましい。
【００２５】
【発明の効果】
以上、詳細に説明したように、本発明に係る窒化物半導体発光素子は、上記ｐ電極上の上記開口部分外側の上記絶縁保護膜上に上記ｐ電極と導通する第１導体を形成し、上記ｎ電極上の上記開口部分外側の上記絶縁保護膜上に上記ｎ電極と導通する第２導体を形成しているので、外側に延在した第１導体と第２導体とによって、フリップチップボンディング時に溶けたハンダを外側に誘導することができ、ｐ電極とｎ電極の間への溶けたハンダのはみ出しを抑制できる。
従って、本発明に係る窒化物半導体発光素子は、溶けたハンダによるｐ電極とｎ電極間の短絡を防止でき、製造時（フリップチップボンディング時）において電極間の短絡を効果的に防止できる。
【図面の簡単な説明】
【図１】 （ａ）は本発明に係る実施の形態１の窒化物半導体発光素子の平面図であり、（ｂ）は（ａ）のＡ−Ａ’線についての断面図である。
【図２】 本発明に係る実施の形態１の窒化物半導体発光素子を実装基板に実装したときの断面図である。
【図３】 従来例の窒化物半導体発光素子を実装基板に実装したときの断面図である。
【図４】 （ａ）は本発明に係る実施の形態２の窒化物半導体発光素子の平面図であり、（ｂ）は（ａ）のＡ−Ａ’線についての断面図である。
【符号の説明】
１…サファイア基板、
２…ｎ型窒化物半導体層、
３…ｐ型窒化物半導体層３、
５…ｐパッド電極、
６…ｎ電極、
７ａ…第２開口部、
７ｂ…第１開口部、
８…ｐ電極、
１０、１０’…第１導体、
１１、１１’…第２導体。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a chip-type nitride semiconductor light emitting device including n-type and p-type nitride semiconductor layers.
[0002]
[Prior art]
In recent years, a light-emitting element using a nitride compound semiconductor has attracted attention as a light-emitting element capable of emitting blue light. In this light emitting device using a nitride compound semiconductor, an n-type nitride semiconductor layer is grown on a sapphire substrate, and a p-type nitride semiconductor layer is grown directly or via the light emitting layer on the n-type nitride semiconductor layer. Having a layered structure. In addition, in a nitride semiconductor light emitting device configured using a sapphire substrate that is an insulator, unlike other light emitting devices configured using a conductive semiconductor substrate, the positive electrode and the negative electrode are on the same surface side. It is formed on the semiconductor layer. That is, the p-side positive electrode is formed on the p-type nitride semiconductor layer, and the n-side negative electrode is formed at a predetermined position at the p-type nitride nitride semiconductor layer (including the light-emitting layer in the case where the light-emitting layer is provided). ) Is removed by etching to expose the upper surface of the n-type nitride semiconductor layer.
[0003]
Thus, in a nitride semiconductor light emitting device, since positive and negative electrodes are usually formed on the same surface side, in order to prevent a short circuit between the positive and negative electrodes, a portion for taking out the positive and negative electrodes (the mounting substrate electrode and the electrode) Insulating protective film is formed except for the connection portion of (2), and is mounted on a mounting substrate for use with the electrode surface facing up or down.
[0004]
[Problems to be solved by the invention]
However, when the conventional nitride semiconductor light emitting device is flip-chip bonded to the mounting substrate with the electrode surface facing down, a conductive adhesive such as solder protrudes between the positive and negative electrodes formed on the same surface side. There was a problem of short-circuiting between them. Therefore, in order to prevent a short circuit between the positive and negative electrodes at the time of manufacture, it is necessary to strictly control the amount of the conductive adhesive and the like, which has been a cause of increasing the manufacturing cost.
[0005]
Therefore, an object of the present invention is to provide a nitride semiconductor light emitting device having a structure capable of effectively preventing a short circuit between electrodes during manufacturing (during flip chip bonding).
[0006]
[Means for Solving the Problems]
In order to achieve the above object, a nitride semiconductor light emitting device according to the present invention includes an n-type nitride semiconductor layer formed on a translucent substrate and a n-type nitride semiconductor layer separated from each other. Each of the semiconductor layers except for an n electrode and a p-type nitride semiconductor layer provided, a p-electrode provided in a part of the p-type nitride semiconductor layer, and an opening on each upper surface of the n-electrode and the p-electrode And a nitride semiconductor light emitting device comprising an insulating protective film provided so as to cover each of the electrodes, a first conductor that is electrically connected to the p electrode on the insulating protective film outside the opening on the p electrode And a second conductor that is electrically connected to the n electrode is formed on the insulating protective film outside the opening on the n electrode, and the p electrode is formed on substantially the entire surface of the p-type nitride semiconductor layer. Full-surface electrode formed and p-pad formed on part of the full-surface electrode The opening is formed on the p-pad electrode in the insulating protective film, and the distance between the first conductor and the second conductor is compared with the distance between the p-pad electrode and the n-electrode It is characterized by being enlarged .
With this configuration, the melted solder between the p electrode and the n electrode can be guided to the outside by the first conductor and the second conductor extending to the outside, so that the melted solder can be guided to the outside. In addition, it is possible to suppress the protrusion of solder and to prevent a short circuit between the p electrode and the n electrode.
[0007]
In the nitride semiconductor light emitting device according to the present invention, the first conductor and the second conductor are formed on the insulating protective film other than the peripheral portion of the nitride semiconductor element, and the insulating protective film is formed in the peripheral portion. may be so that is exposed.
[0008]
Furthermore, another nitride semiconductor light emitting device according to the present invention includes an n-type nitride semiconductor layer formed on a translucent substrate and an n-electrode provided separately on the n-type nitride semiconductor layer. And the p-type nitride semiconductor layer, the p-electrode provided in a part of the p-type nitride semiconductor layer, and the semiconductor layers and the electrodes except for the openings on the upper surfaces of the n-electrode and the p-electrode. In a nitride semiconductor light emitting device including an insulating protective film provided to cover, a first conductor that is electrically connected to the p electrode is formed on the insulating protective film outside the opening on the p electrode, A second conductor that is electrically connected to the n electrode is formed on the insulating protective film outside the opening on the n electrode, and the first conductor and the second conductor are insulated against the insulating portion other than the periphery of the nitride semiconductor element. Formed on the film, and the insulating protective film is exposed at the periphery. Characterized in that was.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Embodiment 1 of the Invention
Hereinafter, a nitride semiconductor light emitting device according to a first embodiment of the present invention will be described with reference to the drawings.
The nitride semiconductor light emitting device of the first embodiment is configured by using a sapphire substrate 1 that is a translucent substrate, and outputs light through the sapphire substrate 1, so-called substrate side light emitting device. And it has the following characteristics.
That is, as shown in FIG. 1, the nitride semiconductor light emitting device of the first embodiment is
(1) forming a first conductor 10 extending on the insulating protective film 7 located outside the first opening 7b on the p-pad electrode 5 and conducting with the p-pad electrode 5;
(2) Unlike the conventional example, the second conductor 11 that extends on the insulating protective film 7 located outside the second opening 7a on the n electrode 6 and is electrically connected to the n electrode 6 is formed.
This prevents a short circuit between the p-electrode and the n-electrode when flip-chip mounting is performed.
Hereinafter, the nitride semiconductor light emitting device of the first embodiment will be described in detail.
[0010]
In the nitride semiconductor light emitting device of the first embodiment, the n-type nitride semiconductor layer 2 is formed on almost the entire surface of the sapphire substrate 1.
The n electrode 6 and the p-type nitride semiconductor layer 3 are separated from each other and formed on the n-type nitride semiconductor layer 2.
Specifically, after forming a p-type nitride semiconductor layer on the n-type nitride semiconductor layer 2, the p-type nitride semiconductor layer in the region where the n-electrode 6 is to be formed is removed by etching or the like to remove the n-type nitride. After a part of the surface of the semiconductor layer 2 is exposed, an n electrode 6 is formed on the exposed surface of the n-type nitride semiconductor layer 2 so as to be electrically separated from the p-type nitride semiconductor layer 3. .
[0011]
The p electrode 8 includes a full surface electrode 4 formed on almost the entire surface of the p-type nitride semiconductor layer 3 and a p pad electrode 5 formed on a part of the surface of the full surface electrode 4. The p pad electrode 5 is preferably formed as far as possible from the n electrode 6.
The insulating protective film 7 is formed so as to cover each semiconductor layer and each electrode formed as described above. In the insulating protective film 7, a first opening 7b is formed on the p-pad electrode 5, and an n-electrode A second opening 7 a is formed on 6.
[0012]
In the nitride semiconductor light emitting device of the first embodiment, the first opening 7b is further connected to the p pad electrode 5 and extends on the insulating protective film 7 located outside the first opening 7b. A first conductor 10 is formed, and a second conductor 11 is formed which is electrically connected to the n-electrode 6 through the second opening 7a and extends on the insulating protective film 7 located outside the second opening 7a.
[0013]
Here, the first conductor 10 is selected so as to satisfy the following conditions (1) to (4). That is, (1) the adhesive force between the p-pad electrode 5 and the insulating protective film 7 is strong, (2) the adhesive force with the solder or the conductive paste is maintained for a long time, and (3) the resistance value is low. And {circle around (4)} that the first conductor is less likely to short-circuit to the n-semiconductor through the defect of the insulating protective film 7 due to the ion migration phenomenon during operation of the light-emitting element. In order to satisfy these requirements, the first conductor 10 is composed of one or more layers of metal films. As a film forming method, an existing method satisfying the above-described characteristics is used.
[0014]
The first conductor 10 is formed by first depositing a metal having Ti, Cr, Al, Zr, Mo, W, Hf, or Ni as a main component or an alloy thereof, and then including Au, Ni, or Pt as the main component. It is made by depositing a metal or an alloy thereof. In the embodiment, Ti is first formed, and then Pt and Au are formed as the final layer. In another embodiment, Cr is deposited first, followed by Pt and then Au as the final layer.
[0015]
The second conductor 11 is selected so as to satisfy the following conditions (1) to (3). That is, (1) the adhesive force with the n-pad electrode and the insulating protective film 7 is strong, (2) the adhesive force with the solder or the conductive paste is maintained for a long time, and (3) the resistance value is low. That is. In order to satisfy these requirements, the second conductor 11 is composed of one or more layers of metal films. As a film forming method, an existing method satisfying the above-described characteristics is used.
[0016]
The second conductor 11 is formed by first depositing a metal having Ti, Cr, Al, Zr, Mo, W, Hf, or Ni as a main component, or an alloy thereof, and then forming Au, Ni, or Pt as a main component. It is made by depositing a metal or an alloy thereof. In the embodiment, Ti is first formed, and then Pt and Au are formed as the final layer. In another embodiment, Cr is deposited first, followed by Pt and then Au as the final layer.
[0017]
In addition, it is desirable on manufacture that the 1st conductor 10 and the 2nd conductor 11 are the same layer structures.
[0018]
As shown in FIG. 2, the nitride semiconductor light emitting device of the first embodiment configured as described above includes, for example, a mounting substrate in which a positive electrode 22 and a negative electrode 21 are formed at a predetermined interval. 20 is placed so that the positive electrode 22 and the first conductor 10 are opposed to each other and the negative electrode 21 and the second conductor 11 are opposed to each other. Joined and so-called flip chip mounting.
[0019]
As described above, the nitride semiconductor light emitting device of the first embodiment that is flip-chip mounted includes the first conductor 10 extending on the insulating protective film 7 outside the first opening 7b, and the second opening 7a outside. Since the second conductor 11 extending on the insulating protective film 7 is formed, when the flip chip mounting is performed as shown in FIG. 2, the melted solders 31 and 32 extend outward. 10 and the second conductor 11, the amount of solder between the first conductor 10 (p pad electrode 5) and the second conductor 11 (n electrode 6) can be reduced.
Thereby, the nitride semiconductor light emitting element of the first embodiment can effectively prevent a short circuit between p pad electrode 5 and n electrode 6.
[0020]
On the other hand, in the conventional nitride semiconductor light emitting device, as shown in FIG. 3, the p-pad is provided through the first opening 7c and the second opening 7d formed in the insulating protective film 70 covering the semiconductor layer and the electrode. The electrode 5 and the n electrode 6 are connected to face the positive electrode 24 and the negative electrode 23 formed on the mounting substrate 20, respectively. In the conventional nitride semiconductor light emitting device mounted in this manner, the solder 33 and 34 melted at the time of mounting are located outside and inside the p pad electrode 5 and the n electrode 6 (between the p pad electrode 5 and the n electrode 6). Projects almost evenly on both sides.
Therefore, in the conventional nitride semiconductor light emitting device, when flip chip mounting is performed, the amount of solder protruding between the p pad electrode 5 and the n electrode 6 is relatively large, and the p pad electrode 5 and the n electrode 6 are short-circuited. Sometimes.
[0021]
In the nitride semiconductor light emitting device of the first embodiment described above, the inner side surfaces (side surfaces facing each other) of the first conductor 10 and the second conductor 11 are the inner side surfaces of the p pad electrode 5 and the n electrode 6, respectively. It is located outside the (side surfaces facing each other).
By doing in this way, since the space | interval between the inner side surfaces of the 1st conductor 10 and the 2nd conductor 11 can be enlarged compared with the space | interval between the inner side surfaces of the p pad electrode 5 and the n electrode 6, it is more effective. Therefore, short circuit between the p side and the n side can be prevented.
[0022]
In the nitride semiconductor light emitting device of the above embodiment, the p pad electrode 5 and the n electrode 6 which are parallel to each other are formed along two opposing sides of the sapphire substrate 1, but the present invention is limited to this. Instead, the p-pad electrode 5 and the n-electrode 6 may be formed at one diagonal corner of the sapphire substrate 1.
[0023]
In the nitride semiconductor light emitting device of the first embodiment, an example in which the n-type nitride semiconductor layer 2 and the p-type nitride semiconductor layer 3 are formed is shown, but the present invention is not limited to this. An active layer may be further formed between the n-type nitride semiconductor layer 2 and the p-type nitride semiconductor layer 3.
Furthermore, although the n-type nitride semiconductor layer 2 and the p-type nitride semiconductor layer 3 are each shown as a single semiconductor layer, the present invention is not limited to this, and the n-type nitride semiconductor layer 2 and the p-type nitride semiconductor layer 3 are not limited thereto. Each of the nitride semiconductor layers 3 may be composed of a plurality of layers.
[0024]
(Embodiment 2 of the invention)
Next, a nitride semiconductor light emitting element similar to that of the first embodiment is formed except that the first conductor 10 ′ and the second conductor 11 ′ are formed as shown in FIG. That is, the first conductor 10 ′ and the second conductor 11 ′ do not completely cover the insulating protective film 7 in the peripheral portion of the chip, but the first protective conductor 10 ′ and the second conductor are exposed slightly. 11 'is formed. When the first conductor 10 and the second conductor 11 completely cover the insulating protective film 7 at the chip periphery as in the first embodiment of the present invention, each chip in the wafer state before being separated by dicing or scribing is used. Then, it is coupled with the adjacent chip via the first conductor 10 and the second conductor 11 which are metal thin films, and the separation work tends to be difficult. In order to prevent this, as in the second embodiment of the present invention, the first conductor 10 ′ and the second conductor 11 ′ are separated from each other at the chip peripheral portion in order to facilitate separation of the chips one by one. It is desirable to form.
[0025]
【The invention's effect】
As described above in detail, the nitride semiconductor light emitting device according to the present invention forms the first conductor that is electrically connected to the p electrode on the insulating protective film outside the opening on the p electrode. Since the second conductor that is electrically connected to the n electrode is formed on the insulating protective film outside the opening portion on the n electrode, the first conductor and the second conductor extending to the outside are used for flip chip bonding. The melted solder can be guided to the outside, and the protrusion of the melted solder between the p electrode and the n electrode can be suppressed.
Therefore, the nitride semiconductor light emitting device according to the present invention can prevent a short circuit between the p-electrode and the n-electrode due to molten solder, and can effectively prevent a short-circuit between the electrodes at the time of manufacture (during flip chip bonding).
[Brief description of the drawings]
1A is a plan view of a nitride semiconductor light-emitting element according to a first embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along the line AA ′ in FIG.
FIG. 2 is a cross-sectional view when the nitride semiconductor light-emitting element according to the first embodiment of the present invention is mounted on a mounting substrate.
FIG. 3 is a cross-sectional view of a conventional nitride semiconductor light emitting device mounted on a mounting substrate.
4A is a plan view of a nitride semiconductor light-emitting element according to Embodiment 2 of the present invention, and FIG. 4B is a cross-sectional view taken along line AA ′ in FIG. 4A.
[Explanation of symbols]
1 ... sapphire substrate,
2 ... n-type nitride semiconductor layer,
3 ... p-type nitride semiconductor layer 3,
5 ... p pad electrode,
6 ... n electrode,
7a ... second opening,
7b ... 1st opening part,
8 ... p electrode,
10, 10 '... first conductor,
11, 11 '... 2nd conductor.

Claims (3)

透光性基板上に形成されたｎ型窒化物半導体層と、該ｎ型窒化物半導体層上に互いに分離されて設けられたｎ電極とｐ型窒化物半導体層と、上記ｐ型窒化物半導体層の一部に設けられたｐ電極と、上記ｎ電極及びｐ電極の各上面の開口部分を除き上記各半導体層及び上記各電極を覆うように設けられた絶縁保護膜とを備えた窒化物半導体発光素子において、
上記ｐ電極上の上記開口部分外側の上記絶縁保護膜上に上記ｐ電極と導通する第１導体を形成し、
上記ｎ電極上の上記開口部分外側の上記絶縁保護膜上に上記ｎ電極と導通する第２導体を形成し、
上記ｐ電極は、上記ｐ型窒化物半導体層上のほぼ全面に形成された全面電極と該全面電極の一部に形成されたｐパッド電極とからなり、上記絶縁保護膜において上記ｐパッド電極上に上記開口部分が形成され、かつ
上記第１導体と上記第２導体との間隔を、上記ｐパッド電極と上記ｎ電極の間隔に比較して大きくしたことを特徴とする窒化物半導体発光素子。An n-type nitride semiconductor layer formed on a light-transmitting substrate, an n-electrode and a p-type nitride semiconductor layer provided on the n-type nitride semiconductor layer separately from each other, and the p-type nitride semiconductor A nitride comprising a p-electrode provided in a part of the layer, and an insulating protective film provided so as to cover each of the semiconductor layers and each of the electrodes excluding openings on the upper surfaces of the n-electrode and the p-electrode In a semiconductor light emitting device,
Forming a first conductor electrically connected to the p-electrode on the insulating protective film outside the opening on the p-electrode;
Forming a second conductor electrically connected to the n electrode on the opening portion outside of the insulating protective film on the n-electrode,
The p-electrode includes a full-surface electrode formed on substantially the entire surface of the p-type nitride semiconductor layer and a p-pad electrode formed on a part of the full-surface electrode. The opening is formed, and
A nitride semiconductor light emitting device, wherein a distance between the first conductor and the second conductor is set larger than a distance between the p pad electrode and the n electrode . 上記第１導体と上記第２導体を窒化物半導体素子の周辺部以外の上記絶縁保護膜上に形成し、上記絶縁保護膜を該周辺部において露出させた請求項１記載の窒化物半導体発光素子。 2. The nitride semiconductor light emitting device according to claim 1 , wherein the first conductor and the second conductor are formed on the insulating protective film other than a peripheral portion of the nitride semiconductor element, and the insulating protective film is exposed at the peripheral portion. . 透光性基板上に形成されたｎ型窒化物半導体層と、該ｎ型窒化物半導体層上に互いに分離されて設けられたｎ電極とｐ型窒化物半導体層と、上記ｐ型窒化物半導体層の一部に設けられたｐ電極と、上記ｎ電極及びｐ電極の各上面の開口部分を除き上記各半導体層及び上記各電極を覆うように設けられた絶縁保護膜とを備えた窒化物半導体発光素子において、
上記ｐ電極上の上記開口部分外側の上記絶縁保護膜上に上記ｐ電極と導通する第１導体を形成し、
上記ｎ電極上の上記開口部分外側の上記絶縁保護膜上に上記ｎ電極と導通する第２導体を形成し、
上記第１導体と上記第２導体を窒化物半導体素子の周辺部以外の上記絶縁保護膜上に形成し、上記絶縁保護膜を該周辺部において露出させたことを特徴とする窒化物半導体発光素子。 An n-type nitride semiconductor layer formed on a light-transmitting substrate, an n-electrode and a p-type nitride semiconductor layer provided on the n-type nitride semiconductor layer separately from each other, and the p-type nitride semiconductor A nitride comprising a p-electrode provided in a part of the layer, and an insulating protective film provided so as to cover each of the semiconductor layers and each of the electrodes excluding openings on the upper surfaces of the n-electrode and the p-electrode In a semiconductor light emitting device,
Forming a first conductor electrically connected to the p-electrode on the insulating protective film outside the opening on the p-electrode;
Forming a second conductor electrically connected to the n electrode on the insulating protective film outside the opening on the n electrode;
It said first conductor and said second conductor is formed on the nitride semiconductor device of the peripheral portion other than the insulating protective film, the nitride semiconductor light-emitting device of the insulating protective film, characterized in that exposed in the peripheral portion .
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