US20130003344A1 - Light-emitting device package - Google Patents

Light-emitting device package Download PDF

Info

Publication number
US20130003344A1
US20130003344A1 US13/614,144 US201213614144A US2013003344A1 US 20130003344 A1 US20130003344 A1 US 20130003344A1 US 201213614144 A US201213614144 A US 201213614144A US 2013003344 A1 US2013003344 A1 US 2013003344A1
Authority
US
United States
Prior art keywords
light
emitting device
carrier
device package
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/614,144
Inventor
Chia-Liang Hsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW096143129A external-priority patent/TWI400787B/en
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to US13/614,144 priority Critical patent/US20130003344A1/en
Publication of US20130003344A1 publication Critical patent/US20130003344A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0031—Reflecting element, sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • H01L33/486—
    • H01L33/507—
    • H01L33/58—
    • H01L33/60—
    • H01L33/62—
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0025—Diffusing sheet or layer; Prismatic sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H01L33/48—

Definitions

  • a light-emitting diode device is disclosed.
  • light-emitting diodes having transparent substrates are divided into face-up type and flip-chip type.
  • the light-emitting diodes are attached to carriers by gels or metals;
  • the light-emitting diodes are attached to carriers by metals or solders with the attached surface as the light extraction surface of the light-emitting diode or the surface parallel to it.
  • the light emitting downward is generally reflected to the front of the light extraction side by the reflecting layers or extracted from the transparent substrates.
  • the thickness of the transparent substrate should be properly adjusted so that the brightness of the light extraction is acceptable.
  • MQW multi-quantum well
  • FIG. 1 shows a schematic illustration of conventional light-emitting diode device.
  • a light-emitting diode chip 100 is attached to a carrier 3 with an attached surface 1 which is parallel to the front light extraction surface 4 of the light-emitting diode chip 100 .
  • the light emitted downward is reflected to the front light extraction surface 4 or the lateral light extraction surface 5 by the reflector 2 .
  • the disadvantage of this device is when the size of the light-emitting diode chip is larger, there are more reflected light passing through the multi-quantum well (MQW) in the light-emitting layer. The light efficiency is reduced because of light absorption.
  • MQW multi-quantum well
  • a light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed On the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.
  • FIG. 1 is an illustration of conventional light-emitting diode device.
  • FIG. 2 is a lateral view of the light-emitting structure of the present invention.
  • FIG. 3 is a lateral view of the light-emitting structure of another embodiment of the present invention.
  • FIG. 4 is a lateral view of the light-emitting device of the present invention.
  • FIG. 5 is a lateral view of the light-emitting device of another embodiment of the present invention.
  • FIG. 6 is a lateral view of the light-emitting diode device of the present invention.
  • FIG. 7 is a lateral view of the light-emitting diode device of another embodiment of the present invention.
  • FIG. 8 is a lateral view of the light-emitting diode device of another embodiment of the present invention.
  • FIG. 9 is a lateral view of the light-emitting diode device of another embodiment of the present invention.
  • FIG. 10 is an illustration of the backlight module of the liquid crystal display device of the present invention.
  • FIG. 11 is an illustration of another backlight module of the liquid crystal display device of the present invention.
  • FIGS. 2 and 3 show the light-emitting structures in accordance with one embodiment of the present application.
  • a structure of a light-emitting diode chip 200 includes an epitaxial structure 202 formed on the growth substrate 201 by metal-organic chemical vapor deposition (MOCVD) process or an epitaxial structure formed on the supporting substrate by a bonding process, wherein the epitaxial structure having a first conductivity type semiconductor layer 202 a, an active layer 202 b, and a second conductivity type semiconductor layer 202 e.
  • a first electrode 203 and a second electrode 204 are disposed on the epitaxial structure 202 to form a horizontal structure of the light-emitting diode chip 200 .
  • the material of the growth substrate can be transparent material such as Sapphire, ZnO, or AlN.
  • the growth substrate can also be high thermal-dissipative materials such as diamond like carbon (DLC), graphite, Si, SiC, GaP, GaAs, or LiAlO 2 .
  • DLC diamond like carbon
  • Si Si, SiC, GaP, GaAs, or LiAlO 2 .
  • a structure of a light-emitting diode chip 300 includes an epitaxial structure 302 formed on the growth substrate 301 by metal-organic chemical vapor deposition (MOCVD) process or an epitaxial structure formed on the supporting substrate by a bonding process, wherein the epitaxial structure having a first conductivity type semiconductor layer 302 a, an active layer 302 b, and a second conductivity type semiconductor layer 302 c.
  • a first electrode 303 is formed on the first side of the epitaxial structure 302 and the second electrode 304 is formed on the second side opposite to first side of the epitaxial structure 302 to form a vertical structure of the light-emitting diode chip 300 .
  • the material of the support substrate can be transparent material or electrically insulating material such as sapphire, diamond, glass, epoxy, quartz, acrylate, ZnO, or AlN.
  • the support substrate can also be high thermal-dissipative materials or reflective materials such as Cu, Al, Mo, Cu—Sn, Cu—Zn, Cu—Cd, Ni—Sn, Ni—Co, Au alloy, diamond like carbon (DLC), graphite, carbon fiber, metal matrix composite (MMC), ceramic matrix composite (CMC), polymer matrix composite (PMC), Si, IP, ZnSe, GaAs, SiC, GaP, GaAsP, ZnSe, InP, LiGaO 2 , or LiAlO 2 .
  • FIG. 4 is an illustration of the light-emitting device 400 in accordance with one embodiment of the present application.
  • a structure of the light-emitting diode chip such as the light-emitting diode chip 200 or 300 is attached to a first surface 404 a of the transparent substrate 404 to form a light-emitting device 400 .
  • the structure of the light-emitting diode chip 200 includes a growth substrate 201 , an epitaxial structure 202 formed on the growth substrate 201 wherein the epitaxial structure having a first conductivity type semiconductor layer 202 a, an active layer 202 b, and a second conductivity type semiconductor layer 202 c; a first electrode 203 and a second electrode 204 formed on the epitaxial structure 202 .
  • the material of the transparent substrate can be sapphire, diamond, glass, epoxy, quartz, acrylate, ZnO, MN, or SiC.
  • FIG. 5 is an illustration of the light-emitting device 500 in accordance with one embodiment of the present application.
  • a structure of the light-emitting diode chip such as light-emitting diode chip 200 or 300 is attached to a transparent substrate 504 containing phosphor materials to form a light-emitting device 500 .
  • the structure of the light-emitting diode chip 200 includes a growth substrate 201 , an epitaxial structure 202 formed on the growth substrate 201 wherein the epitaxial structure having a first conductivity type semiconductor layer 202 a, an active layer 202 b, and a second conductivity type semiconductor layer 202 c; a first electrode 203 and a second electrode 204 formed on the epitaxial structure 202 .
  • a phosphor layer 505 is positioned over and around the structure of the light-emitting diode chip 200 to form a light-emitting device 500 .
  • the structure of the light-emitting diode chip 200 or 300 can be attached to the transparent substrate 404 or 504 by a connecting layer (not shown in FIG. 4 and FIG. 5 ).
  • the material of the connecting layer can be an insulating material such as polyimide, BCB, PFCB, MgO, SUS, epoxy, acrylic resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, silicone, glass, Al 2 O 3 , SiO x , TiO 2 , SiN x , SOG, or other organic adhesive material.
  • the material of the connecting layer can also be a conductive material such as ITO, InO, SnO, CTO, ATO, AZO, ZTO, IZO, Ta 2 O 5 , DLC, Cu, Al, Sn, Au, Ag, Ti, Ni, Pb, Cr, Ag—Ti, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb, Sn—Pb—Zn, Ni—Sn, Ni—Co, or Au alloy, and so on.
  • the material of the connecting layer can also be a semiconductor layer such as ZnO, AlGaAs, GaN, GaP, GaAs, GaAsP, and so on.
  • FIG. 6 is a lateral view of the light-emitting diode device 10 in accordance with one embodiment of the present application.
  • the aforementioned structures of light-emitting device 400 or 500 are applicable to the light-emitting diode device 10 shown in the embodiments of the present application, and the light-emitting device 400 is chosen to describe the embodiments to avoid repeating description.
  • a carrier 601 having a reflective inside wall 602 is provided wherein the carrier can be a printed circuit board, a ceramics substrate, or a silicon substrate.
  • a transparent substrate 404 of the light-emitting device 400 is attached to a platform 603 of the carrier 601 by an adhering material, wherein the first surface 404 a of the transparent substrate 404 and its parallel surface (the second surface 404 b ) are disposed on the platform 603 .
  • the transparent substrate 404 is approximately perpendicular to the platform 603 .
  • the p and n electrode of the light-emitting device is electrically connected to a p electrode 606 and an n electrode 607 of the carrier respectively to form a light-emitting diode device 10 .
  • the light emitted from the active layer of the light-emitting device 400 is omnidirectional.
  • the light emitted to the first surface 404 a of the transparent substrate 404 is passed through the transparent substrate 404 , and emitted from the second surface 404 b of the transparent substrate 404 .
  • the light is reflected from the reflective inside wall 602 of the carrier and leaves the light-emitting diode device 10 .
  • a lens 604 can be positioned over the light-emitting diode device 10 to increase the light efficiency.
  • FIG. 7 is a lateral view of the light-emitting diode device 20 of the second embodiment of the present invention.
  • a transparent substrate 404 of a light-emitting device 400 is attached to a carrier 701 having a reflector 703 by an adhering material 704 wherein the carrier is a printed circuit board, a ceramics substrate, or a silicon substrate.
  • the transparent substrate 404 is approximately perpendicular to the carrier 701 .
  • the p and n electrode of the light-emitting device 400 is electrically connected to the p and n electrode of the carrier respectively.
  • the diffusers 702 are filled in the light-emitting diode device 20 to scatter the light emitted from the light-emitting device 400 .
  • the light (as the arrows indicating in FIG. 7 ) passes through the transparent substrate 404 and is emitted out from the second surface 404 b to form a lateral light-emitting diode device 20 .
  • FIG. 8 is a lateral view of the light-emitting diode device 30 of another embodiment of the present application.
  • a multi-LED structure 800 is formed by bonding two horizontal structures of the light-emitting diode chips 200 and 200 ′ back to back through a connecting layer (not shown in the figure).
  • the structure of the light-emitting diode chip 200 can comprise GaN series material which emits blue light and the structure of the light-emitting diode chip 200 ′ can comprise AlGaInP series material which emits red light.
  • an intermediate substrate 801 can be formed between the structures of the light-emitting diode chips 200 and 200 ′.
  • the intermediate substrate 801 can be a transparent growth substrate of the blue light-emitting diode chip 200 , Besides, a mirror (not shown in the figure) can be further formed at one side of the intermediate substrate 801 to enhance the light extraction efficiency of the light-emitting diode device 30 .
  • the material of the connecting layer can be insulating material such as polyimide, BCB, PFCB, MgO, SU8, epoxy, Acrylic Resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, silicone, glass, Al 2 O 3 , SiO x , TiO 2 , SiN x , SOG, or other organic adhesive material
  • the material of the connecting layer can also be a conductive material such as ITO, InO, SnO, CTO, ATO, AZO, ZTO, IZO, Ta 2 O 5 , DLC, Cu, Al, Sn, Au, Ag, Ti, Ni, Pb, Cr, Ag—Ti, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb, Sn—Pb—Zn, Ni—Sn, Ni—Co, or Au alloy, and so on.
  • the material of the connecting layer can also be a semiconductor layer such as ZnO, AlGaAs, GaN,
  • the multi-LED structure 800 is attached to the transparent substrate 404 and electrically connected to the circuit (not shown in the figure) on the transparent substrate 404 through directly bonding, solder bonding, and/or wire bonding.
  • the transparent substrate 404 of the light-emitting device 800 is further attached to a carrier 701 having a reflective surface 703 by an adhering material 704 wherein the carrier 701 is a printed circuit board, a ceramics substrate, or a silicon substrate.
  • the transparent substrate 404 is approximately perpendicular to the carrier 701 .
  • the circuit (not shown in the figure) of the transparent substrate 404 is electrically connected to a first electrode (ex. p electrode) 701 a and a second electrode (ex.
  • n electrode 701 b of the carrier 701 respectively.
  • Diffusers 702 are filled in the light-emitting diode device 30 to scatter the light emitted from the light-emitting device 800 .
  • the light (as the arrows indicating in FIG. 8 ) passes through the transparent substrate 404 and is emitted out from the second surface 404 b.
  • the structure of the light-emitting diode chip 200 and the structure of the light-emitting diode chip 200 ′ are electrically connected to each other in parallel.
  • FIG. 9 is a lateral view of the light-emitting diode device 40 of one embodiment of the present application.
  • a multi-LED structure 900 is formed by bonding one horizontal structure of the light-emitting diode chip 200 and one vertical structure of the light-emitting diode chip 300 back to back through a conductive bonding layer 901 .
  • the structure of the light-emitting diode chip 200 can comprise GaN series material which emits blue light and the structure of the light-emitting diode chip 300 can comprise AlGaInP series material which emits red light.
  • an intermediate substrate (not shown in the figure) can be formed between the structures of the light-emitting diode chips 200 and 300 .
  • the intermediate substrate can be a transparent growth substrate of the blue light-emitting diode chip 200 .
  • a mirror (not shown in the figure) can be further formed at one side of the intermediate substrate to enhance the light extraction efficiency of the light-emitting diode device 40 .
  • the multi-LED structure 900 is attached to the transparent substrate 404 and electrically connected to the circuit (not shown in the figure) on the transparent substrate 404 through directly bonding, solder bonding, and/or wire bonding.
  • the transparent substrate 404 of a light-emitting device 900 is further attached to a carrier 701 having a reflective surface 703 by an adhering material 704 wherein the carrier 701 is a printed circuit board, a ceramics substrate, or a silicon substrate.
  • the transparent substrate 404 is approximately perpendicular to the carrier 701 .
  • the circuit (not shown in the figure) of the transparent substrate 404 is electrically connected to a first electrode (ex. p electrode) 701 a and a second electrode (ex.
  • n electrode 701 b of the carrier 701 respectively.
  • the diffusers 702 are filled in the light-emitting diode device 40 to scatter the light emitted from the light-emitting device 900 .
  • the light (as the arrows indicating in FIG. 9 ) passes through the transparent substrate 404 and is emitted out from the second surface 404 b.
  • the vertical structure of the light-emitting diode chip 300 is electrically connecting to the horizontal structure of light-emitting diode chip 200 through the conductive bonding layer 901 , the structure of the light-emitting diode chip 200 and the structure of the light-emitting diode chip 300 are electrically connected to each other in series.
  • FIG. 10 is a lateral-view of a backlight module 50 of the liquid crystal display devices accompanied with any one of the embodiments of the present application.
  • a plurality of light-emitting diode devices 10 is attached to a carrier 801 having a reflecting layer 802 on the bottom by an adhering material 804 wherein the carrier is a printed circuit board, a ceramics substrate, or a silicon substrate.
  • the p and n electrode of the light-emitting device is electrically connected to the p and n electrode of the carrier respectively wherein the structure of the light-emitting diode device and the manufacturing method thereof is the same with illustration of FIG. 6 described above.
  • the light emitted from the plurality light-emitting diode devices passes through the thin-film material 803 with different functions, such as prism sheet, to uniformly emit the desired light, and a backlight module 30 of the liquid crystal display device is formed accordingly.
  • FIG. 11 is an illustration of another backlight module 60 coupled with a polarizer of the liquid crystal display device as shown in FIG. 10 .
  • a polarizer 902 having a reflecting layer 901 on the bottom is covered with a thin-film material 903 on the top layer.
  • the polarizer coupled with a plurality of lateral light-emitting diode device 20 to form a backlight module 60 of the liquid crystal display device.
  • the lateral light emitted from the backlight module 60 is guided to the polarizer 902 (as the arrows indicating in FIG. 11 ) wherein the downward light is reflected from the reflecting layer 901 to the polarizer 902 .
  • the mixed and polarized light is emitted through the thin-film material 903 to the other structure of the liquid crystal display device, such as liquid crystal layer wherein the emitting direction of the light is as the arrows indicating in FIG. 11 .

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.

Description

    BACKGROUND
  • 1. Technical Field
  • A light-emitting diode device is disclosed.
  • 2. Reference to Related Application
  • This application is a continuation application of pending U.S. patent application Ser. No. 13/282,317, filed Oct. 26, 2011 which claims benefit as a CIP application of application Ser. No. 12/292,161, filed Nov. 13, 2008 now U.S. Pat. No. 8,240,881, issue Aug. 14, 2012 (of which the entire disclosure of the pending, prior application are hereby incorporated by reference).
  • 3. Description of the Related Art
  • Generally, light-emitting diodes (LEDs) having transparent substrates are divided into face-up type and flip-chip type. For the face-up type, the light-emitting diodes are attached to carriers by gels or metals; for flip-chip type, the light-emitting diodes are attached to carriers by metals or solders with the attached surface as the light extraction surface of the light-emitting diode or the surface parallel to it. Because the light extracted from the light-emitting layer of the light-emitting diodes are 360 degree, the light emitting downward is generally reflected to the front of the light extraction side by the reflecting layers or extracted from the transparent substrates. The thickness of the transparent substrate should be properly adjusted so that the brightness of the light extraction is acceptable. Besides, when the size of the light-emitting diodes is larger, there are more reflected light passing through the multi-quantum well (MQW) in the light-emitting layer. The light efficiency is reduced because of light absorption.
  • FIG. 1 shows a schematic illustration of conventional light-emitting diode device. As shown in FIG. 1, a light-emitting diode chip 100 is attached to a carrier 3 with an attached surface 1 which is parallel to the front light extraction surface 4 of the light-emitting diode chip 100. The light emitted downward is reflected to the front light extraction surface 4 or the lateral light extraction surface 5 by the reflector 2. The disadvantage of this device is when the size of the light-emitting diode chip is larger, there are more reflected light passing through the multi-quantum well (MQW) in the light-emitting layer. The light efficiency is reduced because of light absorption.
    • SUMMARY
  • A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed On the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawings are included to provide easy understanding of the invention, and are incorporated herein and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to illustrate the principles of the invention.
  • FIG. 1 is an illustration of conventional light-emitting diode device.
  • FIG. 2 is a lateral view of the light-emitting structure of the present invention.
  • FIG. 3 is a lateral view of the light-emitting structure of another embodiment of the present invention.
  • FIG. 4 is a lateral view of the light-emitting device of the present invention.
  • FIG. 5 is a lateral view of the light-emitting device of another embodiment of the present invention.
  • FIG. 6 is a lateral view of the light-emitting diode device of the present invention.
  • FIG. 7 is a lateral view of the light-emitting diode device of another embodiment of the present invention.
  • FIG. 8 is a lateral view of the light-emitting diode device of another embodiment of the present invention.
  • FIG. 9 is a lateral view of the light-emitting diode device of another embodiment of the present invention.
  • FIG. 10 is an illustration of the backlight module of the liquid crystal display device of the present invention.
  • FIG. 11 is an illustration of another backlight module of the liquid crystal display device of the present invention.
    •  DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Reference is made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
  • FIGS. 2 and 3 show the light-emitting structures in accordance with one embodiment of the present application. Referring to FIG. 2, a structure of a light-emitting diode chip 200 includes an epitaxial structure 202 formed on the growth substrate 201 by metal-organic chemical vapor deposition (MOCVD) process or an epitaxial structure formed on the supporting substrate by a bonding process, wherein the epitaxial structure having a first conductivity type semiconductor layer 202 a, an active layer 202 b, and a second conductivity type semiconductor layer 202 e. A first electrode 203 and a second electrode 204 are disposed on the epitaxial structure 202 to form a horizontal structure of the light-emitting diode chip 200.
  • The material of the growth substrate can be transparent material such as Sapphire, ZnO, or AlN. The growth substrate can also be high thermal-dissipative materials such as diamond like carbon (DLC), graphite, Si, SiC, GaP, GaAs, or LiAlO2.
  • Referring to FIG. 3, a structure of a light-emitting diode chip 300 includes an epitaxial structure 302 formed on the growth substrate 301 by metal-organic chemical vapor deposition (MOCVD) process or an epitaxial structure formed on the supporting substrate by a bonding process, wherein the epitaxial structure having a first conductivity type semiconductor layer 302 a, an active layer 302 b, and a second conductivity type semiconductor layer 302 c. A first electrode 303 is formed on the first side of the epitaxial structure 302 and the second electrode 304 is formed on the second side opposite to first side of the epitaxial structure 302 to form a vertical structure of the light-emitting diode chip 300.
  • The material of the support substrate can be transparent material or electrically insulating material such as sapphire, diamond, glass, epoxy, quartz, acrylate, ZnO, or AlN. The support substrate can also be high thermal-dissipative materials or reflective materials such as Cu, Al, Mo, Cu—Sn, Cu—Zn, Cu—Cd, Ni—Sn, Ni—Co, Au alloy, diamond like carbon (DLC), graphite, carbon fiber, metal matrix composite (MMC), ceramic matrix composite (CMC), polymer matrix composite (PMC), Si, IP, ZnSe, GaAs, SiC, GaP, GaAsP, ZnSe, InP, LiGaO2, or LiAlO2.
  • FIG. 4 is an illustration of the light-emitting device 400 in accordance with one embodiment of the present application. A structure of the light-emitting diode chip such as the light-emitting diode chip 200 or 300 is attached to a first surface 404 a of the transparent substrate 404 to form a light-emitting device 400. The structure of the light-emitting diode chip 200 includes a growth substrate 201, an epitaxial structure 202 formed on the growth substrate 201 wherein the epitaxial structure having a first conductivity type semiconductor layer 202 a, an active layer 202 b, and a second conductivity type semiconductor layer 202 c; a first electrode 203 and a second electrode 204 formed on the epitaxial structure 202.
  • The material of the transparent substrate can be sapphire, diamond, glass, epoxy, quartz, acrylate, ZnO, MN, or SiC.
  • FIG. 5 is an illustration of the light-emitting device 500 in accordance with one embodiment of the present application. A structure of the light-emitting diode chip such as light-emitting diode chip 200 or 300 is attached to a transparent substrate 504 containing phosphor materials to form a light-emitting device 500. The structure of the light-emitting diode chip 200, includes a growth substrate 201, an epitaxial structure 202 formed on the growth substrate 201 wherein the epitaxial structure having a first conductivity type semiconductor layer 202 a, an active layer 202 b, and a second conductivity type semiconductor layer 202 c; a first electrode 203 and a second electrode 204 formed on the epitaxial structure 202. Following, a phosphor layer 505 is positioned over and around the structure of the light-emitting diode chip 200 to form a light-emitting device 500.
  • As shown in FIG. 4 and FIG. 5, the structure of the light- emitting diode chip 200 or 300 can be attached to the transparent substrate 404 or 504 by a connecting layer (not shown in FIG. 4 and FIG. 5). The material of the connecting layer can be an insulating material such as polyimide, BCB, PFCB, MgO, SUS, epoxy, acrylic resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, silicone, glass, Al2O3, SiOx, TiO2, SiNx, SOG, or other organic adhesive material. The material of the connecting layer can also be a conductive material such as ITO, InO, SnO, CTO, ATO, AZO, ZTO, IZO, Ta2O5, DLC, Cu, Al, Sn, Au, Ag, Ti, Ni, Pb, Cr, Ag—Ti, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb, Sn—Pb—Zn, Ni—Sn, Ni—Co, or Au alloy, and so on. The material of the connecting layer can also be a semiconductor layer such as ZnO, AlGaAs, GaN, GaP, GaAs, GaAsP, and so on.
  • FIG. 6 is a lateral view of the light-emitting diode device 10 in accordance with one embodiment of the present application. The aforementioned structures of light-emitting device 400 or 500 are applicable to the light-emitting diode device 10 shown in the embodiments of the present application, and the light-emitting device 400 is chosen to describe the embodiments to avoid repeating description. Referring to FIG. 6, a carrier 601 having a reflective inside wall 602 is provided wherein the carrier can be a printed circuit board, a ceramics substrate, or a silicon substrate. A transparent substrate 404 of the light-emitting device 400 is attached to a platform 603 of the carrier 601 by an adhering material, wherein the first surface 404 a of the transparent substrate 404 and its parallel surface (the second surface 404 b) are disposed on the platform 603. In a preferred embodiment, the transparent substrate 404 is approximately perpendicular to the platform 603. In addition, the p and n electrode of the light-emitting device is electrically connected to a p electrode 606 and an n electrode 607 of the carrier respectively to form a light-emitting diode device 10. The light emitted from the active layer of the light-emitting device 400 is omnidirectional. The light emitted to the first surface 404 a of the transparent substrate 404 is passed through the transparent substrate 404, and emitted from the second surface 404 b of the transparent substrate 404. The light is reflected from the reflective inside wall 602 of the carrier and leaves the light-emitting diode device 10. Besides, a lens 604 can be positioned over the light-emitting diode device 10 to increase the light efficiency.
  • FIG. 7 is a lateral view of the light-emitting diode device 20 of the second embodiment of the present invention. A transparent substrate 404 of a light-emitting device 400 is attached to a carrier 701 having a reflector 703 by an adhering material 704 wherein the carrier is a printed circuit board, a ceramics substrate, or a silicon substrate. In a preferred embodiment, the transparent substrate 404 is approximately perpendicular to the carrier 701. The p and n electrode of the light-emitting device 400 is electrically connected to the p and n electrode of the carrier respectively. The diffusers 702 are filled in the light-emitting diode device 20 to scatter the light emitted from the light-emitting device 400. The light (as the arrows indicating in FIG. 7) passes through the transparent substrate 404 and is emitted out from the second surface 404 b to form a lateral light-emitting diode device 20.
  • FIG. 8 is a lateral view of the light-emitting diode device 30 of another embodiment of the present application. A multi-LED structure 800 is formed by bonding two horizontal structures of the light-emitting diode chips 200 and 200′ back to back through a connecting layer (not shown in the figure). The structure of the light-emitting diode chip 200 can comprise GaN series material which emits blue light and the structure of the light-emitting diode chip 200′ can comprise AlGaInP series material which emits red light. Besides, an intermediate substrate 801 can be formed between the structures of the light-emitting diode chips 200 and 200′. The intermediate substrate 801 can be a transparent growth substrate of the blue light-emitting diode chip 200, Besides, a mirror (not shown in the figure) can be further formed at one side of the intermediate substrate 801 to enhance the light extraction efficiency of the light-emitting diode device 30.
  • The material of the connecting layer can be insulating material such as polyimide, BCB, PFCB, MgO, SU8, epoxy, Acrylic Resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, silicone, glass, Al2O3, SiOx, TiO2, SiNx, SOG, or other organic adhesive material, The material of the connecting layer can also be a conductive material such as ITO, InO, SnO, CTO, ATO, AZO, ZTO, IZO, Ta2O5, DLC, Cu, Al, Sn, Au, Ag, Ti, Ni, Pb, Cr, Ag—Ti, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb, Sn—Pb—Zn, Ni—Sn, Ni—Co, or Au alloy, and so on. The material of the connecting layer can also be a semiconductor layer such as ZnO, AlGaAs, GaN, GaP, GaAs, GaAsP, and so on.
  • The multi-LED structure 800 is attached to the transparent substrate 404 and electrically connected to the circuit (not shown in the figure) on the transparent substrate 404 through directly bonding, solder bonding, and/or wire bonding. The transparent substrate 404 of the light-emitting device 800 is further attached to a carrier 701 having a reflective surface 703 by an adhering material 704 wherein the carrier 701 is a printed circuit board, a ceramics substrate, or a silicon substrate. In a preferred embodiment, the transparent substrate 404 is approximately perpendicular to the carrier 701. The circuit (not shown in the figure) of the transparent substrate 404 is electrically connected to a first electrode (ex. p electrode) 701 a and a second electrode (ex. n electrode) 701 b of the carrier 701 respectively. Diffusers 702 are filled in the light-emitting diode device 30 to scatter the light emitted from the light-emitting device 800. The light (as the arrows indicating in FIG. 8) passes through the transparent substrate 404 and is emitted out from the second surface 404 b. In this embodiment, the structure of the light-emitting diode chip 200 and the structure of the light-emitting diode chip 200′ are electrically connected to each other in parallel.
  • FIG. 9 is a lateral view of the light-emitting diode device 40 of one embodiment of the present application. A multi-LED structure 900 is formed by bonding one horizontal structure of the light-emitting diode chip 200 and one vertical structure of the light-emitting diode chip 300 back to back through a conductive bonding layer 901. The structure of the light-emitting diode chip 200 can comprise GaN series material which emits blue light and the structure of the light-emitting diode chip 300 can comprise AlGaInP series material which emits red light. Besides, an intermediate substrate (not shown in the figure) can be formed between the structures of the light-emitting diode chips 200 and 300. The intermediate substrate can be a transparent growth substrate of the blue light-emitting diode chip 200. Besides, a mirror (not shown in the figure) can be further formed at one side of the intermediate substrate to enhance the light extraction efficiency of the light-emitting diode device 40.
  • The multi-LED structure 900 is attached to the transparent substrate 404 and electrically connected to the circuit (not shown in the figure) on the transparent substrate 404 through directly bonding, solder bonding, and/or wire bonding. The transparent substrate 404 of a light-emitting device 900 is further attached to a carrier 701 having a reflective surface 703 by an adhering material 704 wherein the carrier 701 is a printed circuit board, a ceramics substrate, or a silicon substrate. In a preferred embodiment, the transparent substrate 404 is approximately perpendicular to the carrier 701. The circuit (not shown in the figure) of the transparent substrate 404 is electrically connected to a first electrode (ex. p electrode) 701 a and a second electrode (ex. n electrode) 701 b of the carrier 701 respectively. The diffusers 702 are filled in the light-emitting diode device 40 to scatter the light emitted from the light-emitting device 900. The light (as the arrows indicating in FIG. 9) passes through the transparent substrate 404 and is emitted out from the second surface 404 b. In this embodiment, because the vertical structure of the light-emitting diode chip 300 is electrically connecting to the horizontal structure of light-emitting diode chip 200 through the conductive bonding layer 901, the structure of the light-emitting diode chip 200 and the structure of the light-emitting diode chip 300 are electrically connected to each other in series.
  • FIG. 10 is a lateral-view of a backlight module 50 of the liquid crystal display devices accompanied with any one of the embodiments of the present application. A plurality of light-emitting diode devices 10 is attached to a carrier 801 having a reflecting layer 802 on the bottom by an adhering material 804 wherein the carrier is a printed circuit board, a ceramics substrate, or a silicon substrate. The p and n electrode of the light-emitting device is electrically connected to the p and n electrode of the carrier respectively wherein the structure of the light-emitting diode device and the manufacturing method thereof is the same with illustration of FIG. 6 described above. The light emitted from the plurality light-emitting diode devices passes through the thin-film material 803 with different functions, such as prism sheet, to uniformly emit the desired light, and a backlight module 30 of the liquid crystal display device is formed accordingly.
  • FIG. 11 is an illustration of another backlight module 60 coupled with a polarizer of the liquid crystal display device as shown in FIG. 10. A polarizer 902 having a reflecting layer 901 on the bottom is covered with a thin-film material 903 on the top layer. The polarizer coupled with a plurality of lateral light-emitting diode device 20 to form a backlight module 60 of the liquid crystal display device. The lateral light emitted from the backlight module 60 is guided to the polarizer 902 (as the arrows indicating in FIG. 11) wherein the downward light is reflected from the reflecting layer 901 to the polarizer 902. The mixed and polarized light is emitted through the thin-film material 903 to the other structure of the liquid crystal display device, such as liquid crystal layer wherein the emitting direction of the light is as the arrows indicating in FIG. 11.

Claims (20)

1. A light-emitting device package comprising:
a carrier having a platform; and
a light-emitting device comprising:
a transparent substrate having a first surface and a second surface; and
a light-emitting structure formed on the first surface of the transparent substrate wherein the light-emitting structure comprising at least an active layer with p-n junction, and an angle between the first surface of the transparent substrate and the platform is not equal to zero degree.
2. The light-emitting device package according to claim 1, wherein the carrier is electrically connecting to the light-emitting device.
3. The light-emitting device package according to claim 1, wherein the area of the first surface and/or the second surface is not smaller than the area of the p-n junction.
4. The light-emitting device package according to claim 1, wherein the angle between the first surface of the transparent substrate and the platform is 45-135 degree.
5. The light-emitting device package according to claim 1, wherein the angle between the first surface of the transparent substrate and the platform is about 90 degree.
6. The light-emitting device package according to claim 1, further comprising an adhering material to adhere the light-emitting device to the platform.
7. The light-emitting device package according to claim 1, further comprising a lens positioned over the carrier.
8. The light-emitting device package according to claim 1, wherein the carrier further comprising a reflecting layer formed on the inner surface of the carrier.
9. The light-emitting device package according to claim 1, wherein the transparent substrate further comprising phosphors.
10. The light-emitting device package according to claim 1, further comprising a phosphor layer coated around the light-emitting device.
11. The light-emitting device package according to claim 1, further comprising diffusers filled in the package.
12. The light-emitting device package according to claim 1, wherein the carrier is a printed circuit board, a ceramics substrate, or a silicon substrate.
13. A backlight module for liquid crystal display device comprising:
a carrier having a reflecting layer;
a light-emitting device package according to claim 1 attached on the reflecting layer of the carrier; and
a thin-film material formed on the carrier.
14. A backlight module for liquid crystal display device comprising:
a polarizer having a reflecting layer;
a light-emitting device package according to claim 1 disposed on the polarizer; and
a thin-film material formed on the polarizer.
15. A light-emitting device package comprising:
a carrier having a reflecting layer;
a plurality of transparent substrates having a first surface and a second surface respectively; and
a plurality of light-emitting devices having a plurality of light-emitting structures attached to the first surface of the plurality of transparent substrates respectively; and
an adhering material, wherein the plurality of light-emitting structures are attached to the reflecting layer by the adhering material and the angle between the first surface of the transparent substrate and the platform is not equal to zero degree.
16. A backlight module for liquid crystal display device comprising:
a carrier having a reflecting layer;
a light-emitting device package according to claim 15 attached on the reflecting layer of the carrier; and
a thin-film material formed on the carrier.
17. A backlight module for liquid crystal display device comprising:
a polarizer having a reflecting layer on one surface;
a light-emitting device package according to claim 15 disposed on the polarizer; and
a thin-film material formed on the polarizer.
18. A light-emitting device package comprising:
a carrier having a platform; and
a light-emitting device comprising:
a transparent substrate having a first surface and a second surface; and
a light-emitting structure formed on the first surface of the transparent substrate wherein the light-emitting structure having at least an active layer with p-n junction, and an angle between the p-n junction and the platform is not equal to zero degree.
19. A backlight module for liquid crystal display device comprising:
a carrier having a reflecting layer;
a light-emitting device package according to claim 18 attached on the reflecting layer of the carrier; and
a thin-film material formed on the carrier.
20. A backlight module for liquid crystal display device comprising:
a polarizer having a reflecting layer;
a light-emitting device package according to claim 18 disposed on the polarizer; and
a thin-film material formed on the polarizer.
US13/614,144 2007-11-13 2012-09-13 Light-emitting device package Abandoned US20130003344A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/614,144 US20130003344A1 (en) 2007-11-13 2012-09-13 Light-emitting device package

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
TW096143129A TWI400787B (en) 2007-11-13 2007-11-13 Light-emitting device package
TW096143129 2007-11-13
US12/292,161 US8240881B2 (en) 2007-11-13 2008-11-13 Light-emiting device package
US13/282,317 US20120037886A1 (en) 2007-11-13 2011-10-26 Light-emitting diode device
US13/614,144 US20130003344A1 (en) 2007-11-13 2012-09-13 Light-emitting device package

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US13/282,317 Continuation US20120037886A1 (en) 2007-11-13 2011-10-26 Light-emitting diode device

Publications (1)

Publication Number Publication Date
US20130003344A1 true US20130003344A1 (en) 2013-01-03

Family

ID=45564155

Family Applications (4)

Application Number Title Priority Date Filing Date
US13/282,317 Abandoned US20120037886A1 (en) 2007-11-13 2011-10-26 Light-emitting diode device
US13/614,144 Abandoned US20130003344A1 (en) 2007-11-13 2012-09-13 Light-emitting device package
US15/050,271 Abandoned US20160172343A1 (en) 2007-11-13 2016-02-22 Light-Emitting Diode Device
US16/389,263 Active 2028-11-30 US11139279B2 (en) 2007-11-13 2019-04-19 Light-emitting diode device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US13/282,317 Abandoned US20120037886A1 (en) 2007-11-13 2011-10-26 Light-emitting diode device

Family Applications After (2)

Application Number Title Priority Date Filing Date
US15/050,271 Abandoned US20160172343A1 (en) 2007-11-13 2016-02-22 Light-Emitting Diode Device
US16/389,263 Active 2028-11-30 US11139279B2 (en) 2007-11-13 2019-04-19 Light-emitting diode device

Country Status (1)

Country Link
US (4) US20120037886A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120037886A1 (en) * 2007-11-13 2012-02-16 Epistar Corporation Light-emitting diode device
US20130200414A1 (en) 2011-10-26 2013-08-08 Epistar Corporation Light-emitting diode device
CN103390704B (en) * 2012-05-08 2016-01-20 华夏光股份有限公司 Light-emitting diode assembly
TWI660525B (en) * 2013-01-29 2019-05-21 晶元光電股份有限公司 Light-emitting diode device package
KR102075993B1 (en) * 2013-12-23 2020-02-11 삼성전자주식회사 Method of Fabricating White LED Devices
JPWO2015146115A1 (en) * 2014-03-25 2017-04-13 東芝ホクト電子株式会社 Light emitting device
CN105810788B (en) * 2014-12-31 2018-05-22 清华大学 Light emitting diode
US20170069791A1 (en) * 2015-09-08 2017-03-09 Epistar Corporation Light-emitting device and method of manufacturing thereof
CN105633121B (en) * 2016-01-05 2019-03-12 京东方科技集团股份有限公司 A kind of electroluminescence display panel, its production method and display device
DE102016104584A1 (en) * 2016-03-14 2017-09-14 Osram Opto Semiconductors Gmbh A light-emitting device and method of manufacturing a light-emitting device
GB201701829D0 (en) * 2017-02-03 2017-03-22 Norwegian Univ Of Science And Tech (Ntnu) Device
TWI693708B (en) * 2018-08-15 2020-05-11 英屬開曼群島商錼創科技股份有限公司 Transparent display panel

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6015979A (en) * 1997-08-29 2000-01-18 Kabushiki Kaisha Toshiba Nitride-based semiconductor element and method for manufacturing the same
US20030179548A1 (en) * 2002-03-21 2003-09-25 General Electric Company Flexible interconnect structures for electrical devices and light sources incorporating the same
US6730533B2 (en) * 2000-09-01 2004-05-04 General Electric Company Plastic packaging of LED arrays
US20050133800A1 (en) * 2003-12-23 2005-06-23 Tessera, Inc. Solid state lighting device
US7030945B2 (en) * 2001-08-22 2006-04-18 Nitto Denko Corporation Liquid-crystal display device
US20060139926A1 (en) * 2004-12-28 2006-06-29 Sharp Kabushiki Kaisha Light-emitting device, and illumination apparatus and display apparatus using the light-emitting device
US20070206164A1 (en) * 2004-03-30 2007-09-06 Beeson Karl W Light emitting diode projection display systems
US20080149949A1 (en) * 2006-12-11 2008-06-26 The Regents Of The University Of California Lead frame for transparent and mirrorless light emitting diodes
US20100155762A1 (en) * 2006-11-15 2010-06-24 The Regents Of The University Of California Standing transparent mirrorless light emitting diode

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4231607B2 (en) 1999-12-13 2009-03-04 日東電工株式会社 Surface light source device and liquid crystal display device
FR2812389B1 (en) * 2000-07-27 2002-09-13 Inst Francais Du Petrole METHOD AND SYSTEM FOR ESTIMATING IN REAL TIME THE MODE OF FLOW OF A POLYPHASIC FLUID VEIN, AT ALL POINTS OF A PIPE
AT410266B (en) * 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh LIGHT SOURCE WITH A LIGHT-EMITTING ELEMENT
JP2002324919A (en) 2001-02-26 2002-11-08 Sharp Corp Light emitting diode and method of manufacturing the same
JP2002335015A (en) * 2001-05-09 2002-11-22 Rohm Co Ltd Semiconductor light emitting element
JP3980890B2 (en) 2002-01-23 2007-09-26 シャープ株式会社 Light guide plate and light source device and display device including the same
JP2003249692A (en) 2002-02-25 2003-09-05 Stanley Electric Co Ltd Semiconductor light emitting device
KR100983193B1 (en) 2002-03-22 2010-09-20 니치아 카가쿠 고교 가부시키가이샤 Nitride Phosphor and Production Process Thereof, and Light Emitting Device
WO2004068182A2 (en) 2003-01-24 2004-08-12 Digital Optics International Corporation High density illumination system
TWI249864B (en) * 2003-03-20 2006-02-21 Toyoda Gosei Kk LED lamp
US6847162B2 (en) * 2003-04-29 2005-01-25 General Electric Company Light source with organic layer and photoluminescent layer
KR100994767B1 (en) 2003-09-17 2010-11-16 삼성전자주식회사 Projection display
US20050146270A1 (en) * 2003-12-29 2005-07-07 Ying-Ming Ho Stacked light emitting diode
TWI302755B (en) 2004-03-12 2008-11-01 Showa Denko Kk Group iii nitride semiconductor light-emitting device, forming method thereof,and lamp using same
KR100586966B1 (en) 2004-05-27 2006-06-08 삼성전기주식회사 Back light module
JP2006056595A (en) 2004-08-21 2006-03-02 Hiromi Matsui Double vacuum packaging bag
TWI237411B (en) 2004-12-06 2005-08-01 Internat Semiconductor Technol Process and structure for packaging LED's
EP1825524A4 (en) * 2004-12-16 2010-06-16 Seoul Semiconductor Co Ltd Leadframe having a heat sink supporting ring, fabricating method of a light emitting diodepackage using the same and light emitting diodepackage fabbricated by the method
TWI249867B (en) 2005-03-24 2006-02-21 Lighthouse Technology Co Ltd Light-emitting diode package, cold cathode fluorescence lamp and photoluminescence material thereof
KR100784551B1 (en) 2005-10-19 2007-12-11 엘지전자 주식회사 A prism sheet employed in backlight unit
JP2007165811A (en) * 2005-12-16 2007-06-28 Nichia Chem Ind Ltd Light emitting device
KR100703217B1 (en) * 2006-02-22 2007-04-09 삼성전기주식회사 Method for fabricating a light emitting diode package
JP2007234975A (en) 2006-03-02 2007-09-13 Matsushita Electric Ind Co Ltd Led light source module, edge input type backlight, and liquid crystal display
JP4944948B2 (en) 2006-05-05 2012-06-06 クリー インコーポレイテッド Lighting device
JP4282693B2 (en) * 2006-07-04 2009-06-24 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
JP4765837B2 (en) 2006-08-23 2011-09-07 ソニー株式会社 Backlight device and liquid crystal display device
KR100772433B1 (en) * 2006-08-23 2007-11-01 서울반도체 주식회사 Light emitting diode package employing lead terminal with reflecting surface
TWI311824B (en) * 2006-10-02 2009-07-01 Ind Tech Res Inst Light emitting diode package structure
US7847306B2 (en) * 2006-10-23 2010-12-07 Hong Kong Applied Science and Technology Research Insitute Company, Ltd. Light emitting diode device, method of fabrication and use thereof
KR20090088365A (en) * 2006-11-08 2009-08-19 씨. 아이. 카세이 가부시기가이샤 Light emitting device and method for manufacturing the same
JP5030742B2 (en) 2006-11-30 2012-09-19 株式会社半導体エネルギー研究所 Light emitting element
US7937068B2 (en) * 2007-08-23 2011-05-03 Motorola Solutions, Inc. Emergency dispatch management and prioritization of communication resources
US20120037886A1 (en) * 2007-11-13 2012-02-16 Epistar Corporation Light-emitting diode device
EP2061122B1 (en) * 2007-11-16 2014-07-02 Fraunhofer USA, Inc. A high power laser diode array comprising at least one high power diode laser, laser light source comprising the same and method for production thereof
KR101332794B1 (en) * 2008-08-05 2013-11-25 삼성전자주식회사 Light emitting device, light emitting system comprising the same, and fabricating method of the light emitting device and the light emitting system
JP5097057B2 (en) 2008-08-29 2012-12-12 株式会社沖データ Display device
US20110204376A1 (en) 2010-02-23 2011-08-25 Applied Materials, Inc. Growth of multi-junction led film stacks with multi-chambered epitaxy system
US8198109B2 (en) 2010-08-27 2012-06-12 Quarkstar Llc Manufacturing methods for solid state light sheet or strip with LEDs connected in series for general illumination
JP5147997B2 (en) 2010-11-04 2013-02-20 パナソニック株式会社 Light emitting device, light bulb shaped lamp and lighting device
TW201312799A (en) 2011-09-02 2013-03-16 Syue-Min Li Light emitting diode device
CN202268388U (en) 2011-10-13 2012-06-06 杭州友旺科技有限公司 Large power LED packaging structure of radial-type heat dissipating ceramic substrate

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6015979A (en) * 1997-08-29 2000-01-18 Kabushiki Kaisha Toshiba Nitride-based semiconductor element and method for manufacturing the same
US6730533B2 (en) * 2000-09-01 2004-05-04 General Electric Company Plastic packaging of LED arrays
US6733711B2 (en) * 2000-09-01 2004-05-11 General Electric Company Plastic packaging of LED arrays
US7030945B2 (en) * 2001-08-22 2006-04-18 Nitto Denko Corporation Liquid-crystal display device
US20030179548A1 (en) * 2002-03-21 2003-09-25 General Electric Company Flexible interconnect structures for electrical devices and light sources incorporating the same
US7397068B2 (en) * 2003-12-23 2008-07-08 Tessera, Inc. Solid state lighting device
US20050133800A1 (en) * 2003-12-23 2005-06-23 Tessera, Inc. Solid state lighting device
US20070206164A1 (en) * 2004-03-30 2007-09-06 Beeson Karl W Light emitting diode projection display systems
US7431463B2 (en) * 2004-03-30 2008-10-07 Goldeneye, Inc. Light emitting diode projection display systems
US20060139926A1 (en) * 2004-12-28 2006-06-29 Sharp Kabushiki Kaisha Light-emitting device, and illumination apparatus and display apparatus using the light-emitting device
US8269237B2 (en) * 2004-12-28 2012-09-18 Sharp Kabushiki Kaisha Light-emitting device, and illumination apparatus and display apparatus using the light-emitting device
US20100155762A1 (en) * 2006-11-15 2010-06-24 The Regents Of The University Of California Standing transparent mirrorless light emitting diode
US8022423B2 (en) * 2006-11-15 2011-09-20 The Regents Of The University Of California Standing transparent mirrorless light emitting diode
US20080149949A1 (en) * 2006-12-11 2008-06-26 The Regents Of The University Of California Lead frame for transparent and mirrorless light emitting diodes

Also Published As

Publication number Publication date
US11139279B2 (en) 2021-10-05
US20120037886A1 (en) 2012-02-16
US20190244940A1 (en) 2019-08-08
US20160172343A1 (en) 2016-06-16

Similar Documents

Publication Publication Date Title
US11139279B2 (en) Light-emitting diode device
US11699776B2 (en) Light-emitting element having conductive contact layer
US10985301B2 (en) Light-emitting device
US9793451B2 (en) Light-emitting diode device
US8772794B2 (en) Light emitting device package having LED disposed in leadframe cavities
US8240881B2 (en) Light-emiting device package
US7589351B2 (en) Light-emitting device
EP2365538B1 (en) Light emitting diode and fabrication method thereof
US11901397B2 (en) LED chip having fan-out structure and manufacturing method of the same
TWI537526B (en) Lighting device with light sources positioned near the bottom surface of a waveguide
EP2381489B1 (en) Light emitting device, light emitting device package, and lighting system
CN104022216A (en) Light emitting device
US20240186363A1 (en) Led chip having fan-out structure and manufacturing method of the same
US9437784B2 (en) Light emitting device
US8994052B2 (en) High-efficiency light-emitting device and manufacturing method thereof
CN211629110U (en) Light emitting package
TWI626769B (en) Light-emitting diode device package
KR20120072739A (en) Light emitting device

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION