CN103390704B - Light-emitting diode assembly - Google Patents
Light-emitting diode assembly Download PDFInfo
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- CN103390704B CN103390704B CN201210140315.7A CN201210140315A CN103390704B CN 103390704 B CN103390704 B CN 103390704B CN 201210140315 A CN201210140315 A CN 201210140315A CN 103390704 B CN103390704 B CN 103390704B
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Abstract
The present invention is a kind of light-emitting diode assembly, comprise at least one light emitting diode, it has a substrate, and one is positioned at the electrical couplings layer on substrate, be positioned at the also direct type epitaxial structure on electrical couplings layer, and in electrical couplings layer and the intermediate layer also between direct type epitaxial structure.In another embodiment, and direct type epitaxial structure is positioned on conductive layer, electrical couplings layer be positioned at and direct type epitaxial structure on, and intermediate layer and between direct type epitaxial structure and electrical couplings layer.
Description
Technical field
The present invention relates to a kind of light-emitting diode, particularly a kind of stack light-emitting diode device.
Background technology
In order to promote the luminous efficiency of light-emitting diode (LED), one of method uses tunnel junction (tunneljunction) by two or more light-emitting diode superpositions.The more single light-emitting diode of superposition light-emitting diode radiates more light, thus improves brightness.Use tunnel junction also can the dispersion (spreading) of current strengthening, more carrier in active layers can be combined (recombination) again.In addition, the single light-emitting diode of the more same number of superposition light-emitting diode has less electrode contact, not only can save space, and can reduce caused electromigration (electromigration) problem.
It is use heavy doping technology that tradition forms one of method of tunnel junction, as United States Patent (USP) the 6th, 822, No. 991, be entitled as " light-emitting device (LightEmittingDevicesIncludingTunnelJunctions) containing tunnel junction ", its tunnel junction uses InGaN (InGaN).Generally speaking, InGaN (InGaN) quality to have, its growth thickness can not more than 2 nanometers (nm).In above-mentioned patent, p++ heavy doping InGaN (InGaN) layer thickness that its tunnel junction comprises is up to 15 nanometers.In practical operation, such thickness be reached and suitable quality will be kept to be almost impossible.Therefore, how reducing InGaN (InGaN) thickness and can reach tunnelling effect, is the important directions of current research and development.
The other method that tradition forms tunnel junction uses polarization (polarization) technology, as United States Patent (USP) the 6th, 878, No. 975, be entitled as " tunneling structure (PolarizationFieldEnhancedTunnelStructures) of polarization field enhancing ".During by polarization to make tunneling structure (such as single-layer silicon nitride indium gallium), the concentration of indium (In) will quite high (being such as greater than 20%), and thickness thick (such as at least 10 nanometers), the tunneling structure formed has the shortcoming of extinction, and stress can concentrate on interface (such as GaN/InGaN interface), make the growth temperature of the light-emitting diode of top in the middle of stack light-emitting diode can not be too high, otherwise stress can increase along with temperature and cause tunnelling to lose efficacy.
Therefore, need the light emitting diode construction proposing a kind of novelty badly, in order to solve the problem of above-mentioned traditional tunnel junction.
Summary of the invention
In view of above-mentioned, one of object of the embodiment of the present invention is to propose a kind of stack light-emitting diode device, and it is formed and connects light emitting diode, thus omits the manufacture of tunnel junction, to avoid the manufacturing issue of traditional tunnel junction.In addition, the light-emitting diode assembly of the present embodiment can promote its quantum well quality, thus improves overall luminous efficiency.
According to one of embodiment of the present invention, light-emitting diode assembly comprises at least one light emitting diode, and it has substrate, electrical couplings layer, intermediate layer and and direct type epitaxial structure.Wherein, electrical couplings layer is positioned on substrate, and electrical couplings layer material is group III-nitride (III-nitride), and direct type epitaxial structure is positioned on electrical couplings layer, and intermediate layer is at electrical couplings layer and and between direct type epitaxial structure.
The doping of wherein said electrical couplings layer is electrically N-shaped.
Wherein said and direct type epitaxial structure comprises:
One first p-type doped layer, is positioned on described intermediate layer;
One first quantum well layer, is positioned on described first p-type doped layer;
One N-shaped doped layer, is positioned on described first quantum well layer;
One second quantum well layer, is positioned on described N-shaped doped layer; And
One second p-type doped layer, is positioned on described second quantum well layer;
Wherein said intermediate layer makes the pressure drop between described electrical couplings layer and described first p-type doped layer level off to zero.
Wherein, described light-emitting diode assembly, also comprises:
One superlattice structure, is formed between described first p-type doped layer and described first quantum well layer.
Wherein, described light-emitting diode assembly, also comprises:
One first electrode, is formed at an exposed surface of described electrical couplings layer;
One second electrode, is formed at a surface of described second p-type doped layer; And
One third electrode, is formed at an exposed surface of described N-shaped doped layer.
Wherein said intermediate layer comprises a tunnel layer or an ohmic contact layer.
Wherein said at least one light emitting diode comprises multiple described light emitting diode, with the arrangement of array pattern, and comprises:
One first online assembly, in order to be electrically connected described first electrode of described light emitting diode and described second electrode; And
One second coupling assembling, in order to described first electrode or described second electrode of the described third electrode and adjacent LED unit that are electrically connected described light emitting diode.
Wherein said first online assembly and described second coupling assembling one of to be independently selected from following group: interconnect and bonding wire.
According to another embodiment of the present invention, light-emitting diode assembly comprises at least one light emitting diode, and it has conductive layer and direct type epitaxial structure, intermediate layer and electrical couplings layer.Wherein, and direct type epitaxial structure is positioned on conductive layer, electrical couplings layer be positioned at and direct type epitaxial structure on, and intermediate layer and between direct type epitaxial structure and electrical couplings layer.
Wherein said and direct type epitaxial structure comprises:
One second p-type doped layer, is positioned on described conductive layer;
One second quantum well layer, is positioned on described second p-type doped layer;
One N-shaped doped layer, is positioned on described second quantum well layer;
One first quantum well layer, is positioned on described N-shaped doped layer; And
One first p-type doped layer, is positioned on described first quantum well layer;
Wherein said intermediate layer makes the pressure drop between described electrical couplings layer and described first p-type doped layer level off to zero.
Wherein, described light-emitting diode assembly, also comprises:
One superlattice structure, is formed between described first p-type doped layer and described first quantum well layer.
Wherein, described light-emitting diode assembly, also comprises:
One reflector, is formed between described conductive layer and described second p-type doped layer.
Wherein, described light-emitting diode assembly, also comprises:
One first electrode, is formed at an exposed surface of described electrical couplings layer; And
One third electrode, is formed at an exposed surface of described N-shaped doped layer.
Wherein said intermediate layer comprises a tunnel layer or an ohmic contact layer.
Wherein said at least one light emitting diode comprises multiple described light emitting diode, with the arrangement of array pattern, and comprises:
One insulated substrate, wherein multiple described light emitting diode system is fixed on this insulated substrate;
One first online assembly, in order to be electrically connected described first electrode of described light emitting diode and described conductive layer; And
One second coupling assembling, in order to the described conductive layer of the described third electrode and adjacent LED unit that are electrically connected described light emitting diode.
Wherein said first online assembly and described second coupling assembling one of to be independently selected from following group: interconnect and bonding wire.
Wherein, described light-emitting diode assembly, also comprises multiple circuit-wiring layer, lays respectively between described insulated substrate and described multiple light emitting diode.
Wherein said first online assembly comprises one first bonding wire, in order to be electrically connected described first electrode to corresponding described circuit-wiring layer; Described second coupling assembling comprises one second bonding wire, in order to be electrically connected described third electrode to the corresponding described circuit-wiring layer of adjacent LED unit.
Accompanying drawing explanation
Figure 1A to Fig. 1 E shows the process section of the light-emitting diode assembly of first embodiment of the invention.
Fig. 2 shows the equivalent electric circuit of the also direct type epitaxial structure of Figure 1B.
Fig. 3 A to Fig. 3 E shows the process section of the light-emitting diode assembly of second embodiment of the invention.
Fig. 4 A shows the profile of the serial connection light-emitting diode assembly of third embodiment of the invention.
Fig. 4 B shows the profile of the another kind serial connection light-emitting diode assembly of third embodiment of the invention.
Fig. 5 shows the string of Fig. 4 A and the equivalent electric circuit of direct type epitaxial structure.
Fig. 6 A shows the profile of the serial connection light-emitting diode assembly of fourth embodiment of the invention.
Fig. 6 B shows the profile of the another kind serial connection light-emitting diode assembly of fourth embodiment of the invention.
Reference marker inventory
100-101 light emitting diode
102-105 is connected in series light-emitting diode assembly
100A first light emitting diode
100B second light emitting diode
101A first light emitting diode
101B second light emitting diode
10 substrates
11 electrical couplings layers
12 intermediate layers
13 and direct type epitaxial structure
130 superlattice structures
131 first p-type doped layers
132 first quantum well layers
133n type doped layer
134 second quantum well layers
135 second p-type doped layers
14 first electrodes
15 second electrodes
16 third electrodes
17 conductive layers
18 reflector
19 insulated substrates
20A first interconnect
20B second interconnect
20C first bonding wire
20D second bonding wire
21A first insulating barrier
21B second insulating barrier
22 circuit-wiring layer
Embodiment
Figure 1A to Fig. 1 E shows light-emitting diode (LED) device of first embodiment of the invention, comprises the process section of at least one light emitting diode 100.For ease of illustrating, the graphic level that only display is relevant to this case embodiment.
As shown in Figure 1A, substrate 10 is first provided.In the present embodiment, the material of substrate 10 is sapphire (sapphire).Such as, but also can use other material, GaAs (GaAs), germanium (Ge) surface formation SiGe (SiGe), silicon (Si) surface formation carborundum (SiC), aluminium (Al) surface form aluminium oxide (Al
2o
3), gallium nitride (GaN), indium nitride (InN), aluminium nitride (AlN), glass or quartz.
Then, continue to consult Figure 1A, form electrical couplings layer 11 on substrate 10.In the present embodiment, the doping of electrical couplings layer 11 is electrically N-shaped, and material is group III-nitride (III-nitride), such as: gallium nitride (GaN), but is not limited to this.According to one of feature of the present embodiment, electrical couplings layer 11, in order to promote quantum well (quantumwell) quality of the light-emitting diode component of follow-up formation, thus improves the luminous efficiency of light-emitting diode (LED) unit 100 entirety.
As shown in Figure 1B, in brilliant technique of heap of stone, intermediate layer 12 is formed on electrical couplings layer 11.In one embodiment, intermediate layer 12 comprises tunnelling (tunnel) layer, and its material can be InGaN (InGaN), but is not limited to this.The formation of tunnel layer can use traditional heavy doping technology or polarization (polarization) technology.In another embodiment, intermediate layer 12 comprises nurse difficult to understand contact (ohmiccontact) layer, and its formation can use traditional heavy doping technology.
Then, continue to consult Figure 1B, formed and direct type epitaxial structure 13 on intermediate layer 12.In the present embodiment, and direct type epitaxial structure 13 comprises: the first p-type doped layer 131, is formed on intermediate layer 12; First quantum well layer 132, is formed on the first p-type doped layer 131; N-shaped doped layer 133, is formed on the first quantum well layer 132; Second quantum well layer 134, is formed on N-shaped doped layer 133; And the second p-type doped layer 135, be formed on the second quantum well layer 134.In the present embodiment, the material of the first p-type doped layer 131, N-shaped doped layer 133 and the second p-type doped layer 135 is group III-nitride (III-nitride), such as: gallium nitride (GaN), but is not limited to this.
The also direct type epitaxial structure 13 of the present embodiment forms a PNP light emitting diode, and its equivalent electric circuit can represent as shown in Figure 2.Wherein, first p-type doped layer 131, first quantum well layer 132 and N-shaped doped layer 133 form a PN light-emitting diode, and the second p-type doped layer 135, second quantum well layer 134 and N-shaped doped layer 133 form another PN light-emitting diode, and these two PN light-emitting diodes share N-shaped doped layer 133.According to another feature of the present embodiment, intermediate layer 12 makes the pressure drop between electrical couplings layer 11 and the first p-type doped layer 131 level off to zero.
Fig. 1 C shows the change mode of Figure 1B, in this embodiment, in order to make the Growing Quality of the first quantum well layer 132 above the first p-type doped layer 131 better, can additionally form superlattice (superlattice) structure 130 between both.Superlattice structure 130 mainly system replaces storehouse by the sublayer that two materials are different and forms, such as by gallium nitride (GaN) and InGaN (InGaN) alternately storehouse form.
As shown in figure ip, etch process is carried out to structure shown in Fig. 1 C, with the part surface of the part surface and N-shaped doped layer 133 that expose electrical couplings layer 11.In the present embodiment, be that use sense answers coupled plasma (inductivelycoupledplasma, ICP) technology to carry out etch process, but be not limited to this.Wherein, etch process stops at the surface of electrical couplings layer 11 and the surface of N-shaped doped layer 133 respectively.
Fig. 1 E shows the change mode of Fig. 1 D.In this embodiment, etch process removing electrical couplings layer 11 and the inner segment thickness near surface of N-shaped doped layer 133.
Then, the exposed surface in electrical couplings layer 11 forms the first electrode 14, and forms the second electrode 15 in the surface of the second p-type doped layer 135, in order to as and direct type epitaxial structure 13(that is PNP light emitting diode) two end electrodes.In addition, in N-shaped doped layer 133 exposed surface formed third electrode 16, in order to as and direct type epitaxial structure 13(that is PNP light emitting diode) target.According to another feature of the present embodiment, electrical couplings layer 11 is in order to electrical couplings first electrode 14 and the first p-type doped layer 131.
Fig. 3 A to Fig. 3 E shows the light-emitting diode assembly of second embodiment of the invention, comprises the process section of at least one light emitting diode 101.For ease of illustrating, the graphic level that only display is relevant to this case embodiment.
First, form the structure shown in Fig. 3 A, it is same as the structure of earlier figures 1C, and therefore it will not go into details for its omissions of detail.Then, as shown in Figure 3 B, formed conductive layer 17 in and direct type epitaxial structure 13 the second p-type doped layer 135 on.The material of the conductive layer 17 of the present embodiment can be metal, but is not limited to this.In the present embodiment, the formation of conductive layer 17 can use metal to cohere (metalbond) technology or plating (electroplating) technology, but is not limited to this.In one embodiment, reflection (mirror) layer 18 can also additionally be formed in conductive layer 17 and and between the second p-type doped layer 135 of direct type epitaxial structure 13.The material in reflector 18 can be distributed Bragg reflector (distributedBraggreflector, DBR) material, comprehensive reflection (omnidirectionalreflector, ODR) material, silver, aluminium, titanium and/or other reflective conductive material.
Then, the structure of flipchart 3B, make conductive layer 17 be positioned at bottom, substrate 10 is then positioned at top, as shown in Figure 3 C.After this, conductive layer 17 will as electrically-conductive backing plate.
Next, the substrate 10 at removing top, to expose electrical couplings layer 11, as shown in Figure 3 D.In the present embodiment, the removing of substrate 10 can use laser technology, but is not limited to this.In addition, the present embodiment also additionally can use etching technique, such as wet etching, the electrical couplings layer 11 exposed in order to process, in order to its surface of alligatoring.
As shown in FIGURE 3 E, etch process is carried out, with the part surface of exposing n-type doped layer 133 to structure shown in Fig. 3 D.In the present embodiment, be that use sense answers coupled plasma (ICP) technology to carry out etch process, but be not limited to this.In addition, etch process can also be carried out to expose the part surface of conductive layer 17.
Then, the exposed surface in electrical couplings layer 11 forms the first electrode 14.Thus, the first electrode 14 and conductive layer 17 can be used as and direct type epitaxial structure 13(that is PNP light emitting diode) two end electrodes.In addition, in N-shaped doped layer 133 exposed surface formed third electrode 16, in order to as and direct type epitaxial structure 13(that is PNP light emitting diode) target.
Fig. 4 A shows the profile of the light-emitting diode assembly 102 of third embodiment of the invention, comprises the multiple Fig. 1 D of serial connection shownschematically light emitting diode 100.Be depicted as example with Fig. 4 A, it is connected in series the first light emitting diode 100A and the second light emitting diode 100B, and these light emitting diodes 100A/100B is fixed on common substrate 10, such as sapphire substrate (sapphire).In part example, light emitting diode 100A/100B lies in brilliant technique of heap of stone and is formed on common substrate 10 simultaneously.First electrode 14 is electrically connected by the first interconnect (interconnect) 20A and the second electrode 15, and the third electrode 16 of the first light emitting diode 100A is electrically connected by first electrode 14 of the second interconnect 20B and the second light emitting diode 100B.The first insulating barrier 21A is formed, to avoid non-essential short circuit between first interconnect 20A and the first/the second light emitting diode 100A/100B.Between second interconnect 20B and the first light emitting diode 100A, and between the second interconnect 20B and the second light emitting diode 100B, be formed with the second insulating barrier 21B, to avoid non-essential short circuit.As shown in Figure 5, it forms one and goes here and there and connect light-emitting diode assembly the equivalent electric circuit of the light-emitting diode assembly 102 after serial connection, and it comprises the PNP light emitting diode of serial connection.
Fig. 4 B shows the profile of the another kind of light-emitting diode assembly 103 of third embodiment of the invention.Seemingly, different places is that use first bonding wire (bondingwire) 20C and the second bonding wire 20D is to replace the first interconnect 20A and the second interconnect 20B respectively for the present embodiment and Fig. 4 category-A.
Fig. 6 A shows the profile of the light-emitting diode assembly 104 of fourth embodiment of the invention, and it is the multiple Fig. 3 E of serial connection shownschematically light emitting diode 101, and these light emitting diodes 101A/101B is fixed on insulated substrate 19.The present embodiment is similar to Fig. 4 A illustrated embodiment, use the first interconnect 20A to be electrically connected the first electrode 14 and its use as the second electrode of conductive layer 17(), and use the second interconnect 20B with the conductive layer 17 of the third electrode 16 and the second light emitting diode 101B that are electrically connected the first light emitting diode 101A.
Fig. 6 B shows the profile of the another kind of light-emitting diode assembly 105 of fourth embodiment of the invention.Seemingly, different places is that use first bonding wire 20C and the second bonding wire 20D is to replace the first interconnect 20A and the second interconnect 20B respectively for the present embodiment and Fig. 6 category-A.Wherein, by circuit-wiring layer 22(, it is formed between conductive layer 17 and insulated substrate 19 first bonding wire 20C) to be electrically connected the first electrode 14 and its use as the second electrode of conductive layer 17(), and the second bonding wire 20D by circuit-wiring layer 22 with the conductive layer 17 of the third electrode 16 and the second light emitting diode 101B that are electrically connected the first light emitting diode 101A.
The foregoing is only the preferred embodiment of the present invention, and be not used to the claim limiting the present invention; All other does not depart from spirit lower the equivalence the completed change or modification of inventing and being disclosed, and all should comprise within the scope of the present invention.
Claims (17)
1. a light-emitting diode assembly, comprises:
At least one light emitting diode, this light emitting diode comprises:
One substrate;
One electrical couplings layer, is positioned on described substrate, and this electrical couplings layer material is group III-nitride;
Direct type epitaxial structure in the lump, is positioned on described electrical couplings layer; And
One intermediate layer, at described electrical couplings layer and described and between direct type epitaxial structure;
Wherein said and direct type epitaxial structure comprises:
One first p-type doped layer, is positioned on described intermediate layer;
One first quantum well layer, is positioned on described first p-type doped layer;
One N-shaped doped layer, is positioned on described first quantum well layer;
One second quantum well layer, is positioned on described N-shaped doped layer; And
One second p-type doped layer, is positioned on described second quantum well layer;
Wherein said intermediate layer makes the pressure drop between described electrical couplings layer and described first p-type doped layer level off to zero.
2. light-emitting diode assembly according to claim 1, the doping of wherein said electrical couplings layer is electrically N-shaped.
3. light-emitting diode assembly according to claim 1, also comprises:
One superlattice structure, is formed between described first p-type doped layer and described first quantum well layer.
4. light-emitting diode assembly according to claim 1, also comprises:
One first electrode, is formed at an exposed surface of described electrical couplings layer;
One second electrode, is formed at a surface of described second p-type doped layer; And
One third electrode, is formed at an exposed surface of described N-shaped doped layer.
5. light-emitting diode assembly according to claim 1, wherein said intermediate layer comprises a tunnel layer or an ohmic contact layer.
6. light-emitting diode assembly according to claim 4, wherein said at least one light emitting diode comprises multiple described light emitting diode, with the arrangement of array pattern, and comprises:
One first online assembly, in order to be electrically connected described first electrode of described light emitting diode and described second electrode; And
One second coupling assembling, in order to described first electrode or described second electrode of the described third electrode and adjacent LED unit that are electrically connected described light emitting diode.
7. light-emitting diode assembly according to claim 6, wherein said first online assembly and described second coupling assembling one of to be independently selected from following group: interconnect and bonding wire.
8. a light-emitting diode assembly, comprises:
At least one light emitting diode, this light emitting diode comprises:
One conductive layer;
Direct type epitaxial structure in the lump, is positioned on described conductive layer;
One electrical couplings layer, is positioned at described and on direct type epitaxial structure, this electrical couplings layer material is group III-nitride; And
One intermediate layer, described and between direct type epitaxial structure and described electrical couplings layer;
Wherein said and direct type epitaxial structure comprises:
One second p-type doped layer, is positioned on described conductive layer;
One second quantum well layer, is positioned on described second p-type doped layer;
One N-shaped doped layer, is positioned on described second quantum well layer;
One first quantum well layer, is positioned on described N-shaped doped layer; And
One first p-type doped layer, is positioned on described first quantum well layer;
Wherein said intermediate layer makes the pressure drop between described electrical couplings layer and described first p-type doped layer level off to zero.
9. light-emitting diode assembly according to claim 8, the doping of wherein said electrical couplings layer is electrically N-shaped.
10. light-emitting diode assembly according to claim 8, also comprises:
One superlattice structure, is formed between described first p-type doped layer and described first quantum well layer.
11. light-emitting diode assemblies according to claim 8, also comprise:
One reflector, is formed between described conductive layer and described second p-type doped layer.
12. light-emitting diode assemblies according to claim 8, also comprise:
One first electrode, is formed at an exposed surface of described electrical couplings layer; And
One third electrode, is formed at an exposed surface of described N-shaped doped layer.
13. light-emitting diode assemblies according to claim 8, wherein said intermediate layer comprises a tunnel layer or an ohmic contact layer.
14. according to the light-emitting diode assembly described in claim 12, and wherein said at least one light emitting diode comprises multiple described light emitting diode, with the arrangement of array pattern, and comprises:
One insulated substrate, wherein multiple described light emitting diode system is fixed on this insulated substrate;
One first online assembly, in order to be electrically connected described first electrode of described light emitting diode and described conductive layer; And
One second coupling assembling, in order to the described conductive layer of the described third electrode and adjacent LED unit that are electrically connected described light emitting diode.
15. according to the light-emitting diode assembly described in claim 14, and wherein said first online assembly and described second coupling assembling one of to be independently selected from following group: interconnect and bonding wire.
16. according to the light-emitting diode assembly described in claim 14, also comprises multiple circuit-wiring layer, lays respectively between described insulated substrate and described multiple light emitting diode.
17. according to the light-emitting diode assembly described in claim 16, and wherein said first online assembly comprises one first bonding wire, in order to be electrically connected described first electrode to corresponding described circuit-wiring layer; Described second coupling assembling comprises one second bonding wire, in order to be electrically connected described third electrode to the corresponding described circuit-wiring layer of adjacent LED unit.
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