KR102504334B1 - Light emitting device - Google Patents

Abstract

An embodiment is a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, the second conductivity type semiconductor An insulating layer disposed under the insulating layer, a first electrode pad and a second electrode pad disposed apart from each other under the insulating layer, and a first electrode penetrating the light emitting structure and the insulating layer and connected to the first electrode pad. and a passivation layer disposed between the first electrode and the light emitting structure, wherein the first electrode passes through the passivation layer and contacts the first conductivity type semiconductor layer.

Description

Light emitting device {LIGHT EMITTING DEVICE}

The embodiment relates to a light emitting device.

Light Emitting Diode (LED) is a type of semiconductor device used as a light source or to transmit and receive signals by converting electricity into infrared rays or light using the characteristics of compound semiconductors.

Group III-V nitride semiconductors are in the limelight as a key material for light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties.

Since these light emitting diodes do not contain environmentally harmful substances such as mercury (Hg) used in existing lighting fixtures such as incandescent and fluorescent lamps, they have excellent eco-friendliness, and have advantages such as long lifespan and low power consumption, so they are superior to existing light sources. are replacing them

The embodiment provides a light emitting device capable of preventing damage to electrode pads and reducing chip thickness.

A light emitting device according to an embodiment includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; an insulating layer disposed under the second conductivity type semiconductor layer; a first electrode pad and a second electrode pad spaced apart from each other under the insulating layer; a first electrode passing through the light emitting structure and the insulating layer and connected to the first electrode pad; and a passivation layer disposed between the first electrode and the light emitting structure, wherein the first electrode penetrates the passivation layer and contacts the first conductivity type semiconductor layer.

The first electrode may include an upper electrode disposed on the first conductivity type semiconductor layer; a penetration electrode connected to the upper electrode and connected to the first electrode pad through the light emitting structure and the insulating layer; and a contact electrode spaced apart from the through electrode and contacting the first conductivity type semiconductor layer.

The passivation layer may include a first passivation layer disposed between a portion of the light emitting structure penetrated by the through electrode and the through electrode; and a second passivation layer disposed between the upper electrode and the first conductivity type semiconductor layer, wherein the contact electrode may pass through the second passivation layer and contact the first conductivity type semiconductor layer.

The light emitting device may further include a second electrode disposed between the second conductivity type semiconductor layer and the second electrode pad.

The insulating layer may include a first insulating layer disposed under the second conductivity-type semiconductor layer and exposing the second electrode; And it may include a second insulating layer disposed on the side of the light emitting structure.

The second electrode pad may have a structure that is convexly bent in a direction from the second conductivity type semiconductor layer toward the first conductivity type semiconductor layer.

A diameter of the through electrode may gradually decrease as it progresses from the first conductivity type semiconductor layer toward the second conductivity type semiconductor layer.

The contact electrode may have a ring shape surrounding the through electrode.

The contact electrode may include a plurality of contact electrodes spaced apart from each other around the through electrode.

The through electrode may overlap the first electrode pad in a vertical direction.

A light emitting device according to another embodiment includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; an insulating layer disposed on a side surface of the light emitting structure and under the second conductive semiconductor layer; a first electrode pad and a second electrode pad spaced apart from each other under the insulating layer; a passivation layer disposed on the first conductivity type semiconductor layer; and a second end disposed on an insulating layer disposed on side surfaces of the passivation layer and the light emitting structure, one end penetrating the passivation layer and contacting the first conductive semiconductor layer, and the other end contacting the first electrode pad. Contains 1 electrode.

The first electrode may include an upper electrode disposed on the passivation layer; a contact electrode connected to the upper electrode and passing through the passivation layer to contact the first conductivity type semiconductor layer; and a connection electrode disposed on an insulating layer disposed on a side surface of the light emitting structure and connecting the upper electrode and the first electrode pad.

The upper electrode may be disposed to overlap an edge of the light emitting structure in a vertical direction.

The upper electrode may overlap the first electrode pad in a vertical direction.

A display device according to an embodiment includes a substrate including a first wiring electrode and a second wiring electrode; and a plurality of light emitting elements disposed on the substrate in a matrix form, wherein the plurality of light emitting elements include a first light emitting element generating red light, a second light emitting element generating green light, and a second light emitting element generating blue light. device, wherein each of the plurality of light emitting elements is any one of the embodiments, a first electrode pad of each of the plurality of light emitting elements is bonded to the first wire electrode, and each of the plurality of light emitting elements A second electrode pad is bonded to the second wire electrode.

The embodiment can prevent damage to electrode pads and reduce chip thickness.

1 shows an upper plan view of a light emitting device according to an embodiment.
FIG. 2 shows a bottom plan view of the light emitting device shown in FIG. 1 .
FIG. 3 shows a cross-sectional view of the light emitting device shown in FIGS. 1 and 2 in an AB direction.
4 is a cross-sectional view of the light emitting device shown in FIGS. 1 and 2 in the CD direction.
5A shows an embodiment of the first electrode shown in FIG. 3 .
FIG. 5B shows another embodiment of the first electrode shown in FIG. 3 .
6 shows a cross-sectional view of a light emitting device according to another embodiment.
7A is an upper plan view of a light emitting device according to another embodiment.
FIG. 7B is a bottom plan view of the light emitting device shown in FIG. 7A.
8A is an upper plan view of a light emitting device according to another embodiment.
FIG. 8B is a bottom plan view of the light emitting device shown in FIG. 8A.
9 is a cross-sectional view taken along line I-II of the light emitting device shown in FIGS. 8A and 8B.
10A to 10J are process charts illustrating a method of manufacturing the light emitting device shown in FIG. 6 .
11 is a cross-sectional view of a lighting device according to an embodiment.
12 is a plan view of a display device according to an embodiment.
FIG. 13 is a cross-sectional view of the display device shown in FIG. 12 in an AA′ direction according to an exemplary embodiment.

Hereinafter, embodiments will be clearly revealed through the accompanying drawings and description of the embodiments. In the description of the embodiment, each layer (film), region, pattern or structure is “on” or “under” the substrate, each layer (film), region, pad or pattern. In the case where it is described as being formed in, "up / on" and "under / under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criterion for the upper/upper or lower/lower of each layer will be described based on the drawings. Also, like reference numerals denote like elements throughout the description of the drawings.

1 shows an upper plan view of a light emitting device 100 according to an embodiment, FIG. 2 shows a lower plan view of the light emitting device 100 shown in FIG. 1, and FIG. 3 shows the light emitting device shown in FIGS. 1 and 2 100 shows a cross-sectional view in the AB direction, and FIG. 4 shows a cross-sectional view in the CD direction of the light emitting element 100 shown in FIGS. 1 and 2 .

1 to 4, the light emitting device 100 includes a light emitting structure 110, a passivation layer 120, a first electrode 130, a first electrode pad 135, and a second electrode 140. ), a second electrode pad 145, and an insulation layer 150.

The light emitting structure 110 is disposed between the first conductivity type semiconductor layer 112, the second conductivity type semiconductor layer 116, and the first conductivity type semiconductor layer 112 and the second conductivity type semiconductor layer 116. Active layer 114 is included. For example, the light emitting structure 110 may have a structure in which a first conductivity type semiconductor layer 112, an active layer 114, and a second conductivity type semiconductor layer 116 are sequentially disposed from top to bottom.

For example, the diameter of the light emitting structure 110 may decrease from the first conductivity type semiconductor layer 112 toward the second conductivity type semiconductor layer 116, and the side of the light emitting structure 110 may have a reverse inclined surface. However, it is not limited thereto.

Unlike general light-emitting devices having a light-transmitting substrate or supporting substrate, the light-emitting device 100 according to the embodiment does not include a light-transmitting substrate or supporting substrate. As a result, since the chip size (eg, diameter) or volume of the light emitting element is reduced, the thickness or size of an application in which the light emitting element according to the embodiment is used, for example, a display device, can be reduced.

The first conductivity type semiconductor layer 112 may be a semiconductor compound of group 3-5 or group 2-6, and may be doped with a first conductivity type dopant.

For example, the first conductivity-type semiconductor layer 112 is a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) and may be doped with an n-type dopant (eg, Si, Ge, Se, Te, etc.).

In order to increase light extraction, a light extraction structure, for example, a concavo-convex 112a may be formed on the upper surface of the first conductivity type semiconductor layer 112 .

The active layer 114 emits light by energy generated during recombination of electrons and holes provided from the first conductivity type semiconductor layer 112 and the second conductivity type semiconductor layer 116. can create

The active layer 114 may be a compound semiconductor of group 3-5 or group 2-6, and may have a single well structure, a multi-well structure, a quantum-wire structure, a quantum dot, or a quantum disk. (Quantum Disk) structure.

The active layer 114 may have a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). When the active layer 114 has a quantum well structure, the active layer 114 has a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) A well layer (not shown) and a barrier layer (not shown) having a composition formula of In _a Al _b Ga _{1 -a- b} N (0≤a≤1, 0≤b≤1, 0≤a+b≤1) ) may be included.

An energy band gap of the well layer of the active layer 114 may be lower than that of the barrier layer. The well layer and the barrier layer may be alternately stacked at least once.

The second conductivity type semiconductor layer 116 may be a semiconductor compound of group 3-5 or group 2-6, and may be doped with a second conductivity type dopant.

For example, the second conductivity-type semiconductor layer 116 is a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) and a p-type dopant (eg Mg, Zn, Ca, Sr, Ba) may be doped.

For example, the light emitting structure 110 may generate any one of red light, green light, or blue light, but is not limited thereto, and may generate visible light or ultraviolet light of various wavelengths.

For example, the first conductivity type semiconductor layer of the light emitting structure 110 generating red light is In _x Al _y Ga _1-xy P (0≤x≤1, 0≤y≤1, 0≤x+y≤1) or A semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), such as AlGaP, InGaP, AlInGaP, InP, GaN , InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, and GaP may be formed of any one or more, and may include an n-type dopant.

Also, for example, the active layer of the light emitting structure 110 generating red light is GaInP/AlGaInP, GaP/AlGaP, InGaP/AlGaP, InGaN/GaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, GaAs/AlGaAs, InGaAs/AlGaAs It may be formed in any one or more pair structures, but is not limited thereto.

In addition, the composition of the quantum well layer of the active layer of the light emitting structure generating red light may be (Al _p Ga _1-p ) _q In _1-q P layer (however, 0≤p≤1, 0≤q≤1), The composition of the quantum barrier layer may be (Al _p1 Ga _{1 - p1} ) _q1 In _{1 - q1} P layer (where 0≤p1≤1 and 0≤q1≤1), but is not limited thereto.

Also, for example, the second conductivity-type semiconductor layer of the light emitting structure generating red light is In _x Al _y Ga _1-xy P (0≤x≤1, 0≤y≤1, 0≤x+y≤1) or In _x It may be formed of a semiconductor material having a composition formula of Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), and may include a p-type dopant. .

Although not shown in FIGS. 3 and 4 , in order to prevent electrons injected into the active layer 114 from the first conductivity type semiconductor layer 112 from passing over to the second conductivity type semiconductor layer 116 to increase luminous efficiency, The light emitting structure 110 may further include an electron blocking layer disposed between the active layer 114 and the second conductive semiconductor layer 116 . In this case, the energy band gap of the electron blocking layer is larger than that of the barrier layer of the active layer 114 .

The first electrode 130 penetrates the light emitting structure 110 and the insulating layer 150 disposed under the light emitting structure 110 .

The first electrode 130 is positioned on one surface, for example, the upper surface of the light emitting structure 110, and penetrates or passes through the light emitting structure 110 and is exposed to the other surface, for example, the lower surface of the light emitting structure 110.

The light emitting structure 110 may include a first through hole 301 penetrating the first conductivity type semiconductor layer 112, the active layer 114, and the second conductivity type semiconductor layer 116, and the first electrode A portion of 130 may be disposed within the first through hole 301 .

One end of the first electrode 130 contacts the first conductivity type semiconductor layer 112 .

The other end of the first electrode 130 passing through or through the light emitting structure 110 is exposed to the other surface of the light emitting structure 110 and is connected to the first electrode pad 135 .

For example, the first electrode 130 is disposed on the upper surface of the first conductivity type semiconductor layer 112 and may be exposed to the lower surface of the second conductivity type semiconductor layer 116 by penetrating or passing through the light emitting structure 110, , One end of the first electrode 130 may contact the top surface of the first conductivity type semiconductor layer 112, and the other end of the first electrode 130 may be exposed to the bottom surface of the second conductivity type semiconductor layer 116. can

The passivation layer 120 is disposed between a portion of the first electrode 130 penetrating the light emitting structure 110 and an inner surface of the first through hole 301, and the first electrode 130 and the light emitting structure 110 ) prevents electrical contact of the inner surface of the first through hole 301, and serves to insulate both.

For example, the first electrode 130 includes a through electrode 132 , an upper electrode 134 , and a contact electrode 136 .

The penetration electrode 132 is disposed in the first through hole 301 of the light emitting structure 110 and penetrates or passes through the light emitting structure 110 . One end of the through electrode 132 may be connected to or in contact with the lower surface of the upper electrode 134 , and the other end of the through electrode 132 may be connected to or in contact with the first electrode pad 135 .

The diameter of the through electrode 132 may gradually decrease as it progresses from the first conductivity type semiconductor layer 112 to the second conductivity type semiconductor layer 116, but is not limited thereto. The diameter of the electrode 132 may increase or may be constant.

3 illustrates one first through hole 301, one through electrode 132, and one first electrode pad 135, but is not limited thereto, and in another embodiment, two or more through holes are provided. , through electrodes corresponding thereto, and first electrode pads. In this case, the first through holes may be spaced apart from each other, and the through electrodes may be spaced apart from each other. Also, the first electrode pads may be spaced apart from each other or connected to each other.

The upper electrode 134 is disposed on the top surface of the through electrode 132 and the first conductivity type semiconductor layer 112 positioned adjacent to the through electrode 132 . The lower surface of the upper electrode 134 is connected to or in contact with one end of the through electrode 132 .

One end of the contact electrode 136 is connected to the upper electrode 134 and the other end is in contact with the top surface of the first conductivity type semiconductor layer 112 .

For example, the contact electrode 136 may extend from the bottom surface of the upper electrode 134 toward the top surface of the first conductivity type semiconductor layer 112 and may make ohmic contact with the top surface of the first conductivity type semiconductor layer 112 . there is.

The passivation layer 120 may include a first passivation layer 122 disposed between the side surface of the first through hole 301 and the through electrode 132 . That is, the first passivation layer 122 may be disposed between the through electrode 132 and the portion of the light emitting structure 110 penetrated by the through electrode 132 .

In addition, the passivation layer 120 may further include a second passivation layer 124 disposed between the upper electrode 134 and the top surface of the first conductivity type semiconductor layer 112 .

For example, the second vesivation layer 124 may be disposed on the upper surface of the first conductivity-type semiconductor layer 112, and the upper electrode 134 may be disposed on the second vesivation layer 124, and contact The electrode 136 may penetrate the second passivation layer 124 and extend to contact the top surface of the first conductivity type semiconductor layer 112 .

For example, the contact electrode 136 may be spaced apart from a portion where the through electrode 132 and the upper electrode 134 are in contact or connected, and a portion where the through electrode 132 and the upper electrode 134 are in contact or connected. And the second passivation layer 124 may be positioned between the contact electrode 136 .

Since the contact electrode 136 is spaced apart from a portion where the through electrode 132 and the upper electrode 134 are in contact or connected by the second passivation layer 124, current flowing through the through electrode 132 is reduced. It may be provided by being dispersed in the light emitting structure 110 . Accordingly, the second passivation layer 124 may serve to distribute the current and provide it to the light emitting structure 110 .

In FIG. 3 , the second passivation layer 124 may expose a portion of the top surface of the first conductivity type semiconductor layer 112 .

The passivation layer 120 may be formed of a light-transmitting insulating material such as SiO ₂ , SiOx, Si ₃ N ₄ , TiO ₂ , SiNx, SiO _x N _y , or Al ₂ O ₃ .

FIG. 5A shows an example of the first electrode 130 shown in FIG. 3 .

Referring to FIG. 5A , the first electrode 130 may include a through electrode 132 , an upper electrode 134 , and a ring-shaped contact electrode 136 surrounding the through electrode 132 . For example, the contact electrode 136 may have a circular ring shape, but is not limited thereto, and may also have a polygonal or elliptical shape.

FIG. 5B shows another embodiment 130a of the first electrode 130 shown in FIG. 3 .

Referring to FIG. 5B , the first electrode 130a includes the through electrode 132 , the upper electrode 134 , and a plurality of contact electrodes 136 - 1 to 136 - disposed spaced apart from each other around the through electrode 132 . 4) may be included.

Each of the plurality of contact electrodes 136-1 to 136-4 contacts or is connected to the lower surface of the upper electrode 134 and penetrates the second passivation layer 124 to form the upper surface of the first conductivity type semiconductor layer 112. can be contacted. For example, each of the plurality of contact electrodes 136-1 to 136-4 may have a circular shape, but is not limited thereto, and may also have a polygonal or elliptical shape.

The first electrode pad 135 is disposed under the light emitting structure 110 and connected to or in contact with the other end of the through electrode 132 of the first electrode 130 .

For example, the first electrode pad 135 may be disposed on the lower surface of the second conductive semiconductor layer 116 positioned adjacent to the through electrode 132 . For example, the center of the first electrode pad 135 may be aligned with the center of the through electrode 132, but is not limited thereto.

For bonding, the thickness of the first electrode pad 135 may be thicker than the thickness of the upper electrode 134 of the first electrode 130, but is not limited thereto.

As shown in FIG. 2 , the planar shape of the first electrode pad 135 is circular, but is not limited thereto, and may be elliptical or polygonal in other embodiments.

The second electrode 140 is disposed under the light emitting structure 110 and contacts the second conductive semiconductor layer 116 . For example, the second electrode 140 may be disposed on the lower surface of the light emitting structure 110 , for example, on the lower surface of the second conductive semiconductor layer 116 .

The second electrode 140 is disposed between the second conductivity type semiconductor layer 116 and the second electrode pad 145, and the second electrode 140 and the second conductivity type semiconductor layer 116 may be in ohmic contact. there is.

The second electrode 140 may be disposed on the lower surface of the second conductive semiconductor layer 116 spaced apart from the other end of the through electrode 132 exposed from the lower surface of the second conductive semiconductor layer 116 .

For example, the second electrode 140 may be disposed to surround the other end of the through electrode 132 exposed from the lower surface of the second conductivity type semiconductor layer 116 .

The first electrode 130 may include an ohmic contact layer for ohmic contact with the first conductivity-type semiconductor layer 112 and a reflective layer. For example, the first electrode 130 may be formed of Pb, Sn, Au, Ge, Cu, Bi, Cd, Zn, Ag, Ni, Ti, or an alloy including at least one of these, and may include a single layer or a plurality of layers. can be made with

The second electrode 140 may include an ohmic contact layer for ohmic contact with the second conductivity-type semiconductor layer 116 and a reflective layer.

For example, the ohmic contact layer of the second electrode 140 may be a transparent conductive oxide such as ITO, or Ni or Cr. For example, the reflective layer of the second electrode 140 includes Ag, Al, or Rh, or an alloy containing Ag, Al, or Rh, or Cu, Re, Bi, Al, Zn, W, Sn, In, Alternatively, it may be an alloy of at least one selected from Ni and silver (Ag).

In addition, the second electrode 140 may further include at least one of a diffusion barrier layer and a bonding layer. For example, the second electrode 140 may further include a diffusion barrier layer including at least one of Ni, Cr, Ti, Pd, Pt, W, Co, or Cu. Also, for example, the second electrode 140 may further include a bonding layer made of gold (Au), silver (Ag), or an Au alloy.

Each of the first and second electrode pads 135 and 145 is a portion bonded to a package body, a submount, or a substrate, and may be a conductive metal capable of maintaining electrical conduction. For example, each of the first and second electrode pads 135 and 145 may include at least one of Au, Ni, Cu, and Al, or may be made of an alloy including at least one of these, and may be formed of a single layer or a plurality of layers. It can be formed in layers.

In addition, for example, for self-assembly of a light emitting device having a small size (eg, a diameter of less than 100 microns) when bonding with a package body, a submount, or a substrate, a first step And each of the second electrode pads 135 and 145 may include at least one of Co, Ni, and Fe, or may be made of an alloy including at least one of these.

The insulating layer 150 is disposed on at least one of the side surface or bottom surface of the light emitting structure 110 .

The insulating layer 150 may be disposed under the second conductivity type semiconductor layer 116 . For example, the insulating layer 150 may include a first insulating layer 152 disposed on the lower surface of the second conductive semiconductor layer 116 .

For example, the first insulating layer 152 may be disposed on the remaining area of the lower surface of the second conductive semiconductor layer 116 excluding the area where the second electrode 140 is disposed. Also, for example, the first insulating layer 152 may be disposed on an edge region of the lower surface of the second electrode 140 disposed on the lower surface of the second conductive semiconductor layer 116, and may be disposed on the lower surface of the second electrode 140. A part of the lower surface may be exposed.

The first electrode pad 135 and the second electrode pad 145 may be spaced apart from each other under the first insulating layer 152 .

The first insulating layer 152 may be disposed between the lower surface of the second conductive semiconductor layer 116 and the first electrode pad 135, and may be disposed between the second conductive semiconductor layer 116 and the first electrode pad 135. ) can prevent electrical contact between them.

In addition, the first insulating layer 152 may be disposed between the first electrode pad 135 and the second electrode pad 145, and electrical contact between the first electrode pad 135 and the second electrode pad 145 is achieved. can prevent

To perform die bonding with a package body, submount, or substrate, the lower surface of the first electrode pad 135 and the lower surface of the second electrode pad 146 are on the same plane. can be located in

The first electrode pad 135 may be disposed under the first insulating layer 152 so as to be vertically aligned with or overlap the through electrode 132, and the through electrode 132 penetrates the first insulating layer 152. Alternatively, it may pass through and be connected or contacted with the first electrode pad 135 . Here, the vertical direction may be a direction from the second conductivity type semiconductor layer 116 of the light emitting structure 110 to the first conductivity type semiconductor layer 112 .

The second electrode pad 145 may be disposed under a partial region of the lower surface of the second electrode 140 exposed by the first insulating layer 152, and is connected to or connected to the exposed portion of the second electrode 140. can be contacted.

For example, the first insulating layer 152 may cover only an upper part of the side surface of the second electrode pad 145 . In addition, the edge of the second electrode pad 145 may contact the lower surface of the first insulating layer 152 and may have a structure extending in the horizontal direction to be positioned under the lower surface of the first insulating layer 152, It is not limited to this.

For example, the second electrode pad 145 may have a structure that is convexly bent in a direction from the second conductivity type semiconductor layer 116 toward the first conductivity type semiconductor layer 112, but is not limited thereto.

In another embodiment, the first insulating layer 152 completely covers the side surface of the second electrode pad 145, and the lower surface of the first insulating layer, the lower surface of the first electrode pad 135, and the second electrode pad 146 The lower surface of may be located on the same plane.

The insulating layer 150 may further include a second insulating layer 154 disposed on a side surface of the light emitting structure 110 . For example, the second insulating layer 154 may be disposed on a side surface of the first conductivity type semiconductor layer 112 , a side surface of the active layer 114 , and a side surface of the second conductivity type semiconductor layer 116 .

For example, one end of the second insulating layer 154 may extend to the edge of the upper surface of the first conductive semiconductor layer 112 and be connected or contacted with the passivation layer 1120, and the The other end may be connected to or in contact with the first insulating layer 152 .

The insulating layer 150 may be formed of an insulating material such as SiO ₂ , SiOx, Si ₃ N ₄ , TiO ₂ , SiNx, SiO _x N _y , or Al ₂ O ₃ may include at least one of them.

The insulating layer 150 may be a distributed Bragg reflective layer having a multilayer structure in which at least two layers having different refractive indices are alternately stacked at least once.

The insulating layer 150 may have a structure in which a first layer having a first refractive index and a second layer having a second refractive index smaller than the first refractive index are alternately stacked one or more times.

For example, the insulating layer 150 may have a structure in which a TiO ₂ layer/SiO ₂ layer is stacked one or more times, and each of the first layer and the second layer may have a thickness of λ/4, and λ is the light emitting structure 110 ) may mean the wavelength of light generated from

6 shows a cross-sectional view of a light emitting device 100-1 according to another embodiment. The same reference numerals as those in FIG. 3 denote the same configurations, and descriptions of the same configurations are simplified or omitted.

The passivation layer 120 of FIG. 3 exposes a portion of the upper surface of the first conductivity type semiconductor layer 112 . On the other hand, the passivation layer 120-1 of the light emitting device 100-1 of FIG. 6 except for a portion of the upper surface of the first conductivity type semiconductor layer 112 exposed to come into contact with the contact electrode 136. may not expose the upper surface of the first conductivity type semiconductor layer 112 .

For example, the second passivation layer 124a exposes the top surface of the first conductivity type semiconductor layer 112 except for a portion of the top surface of the first conductivity type semiconductor layer 112 that is in contact with the contact electrode 136 . Otherwise, the entire top surface of the first conductivity type semiconductor layer 112 may be covered, and the second insulating layer 154 may be connected or contacted.

FIG. 7A shows a top plan view of a light emitting device 100-2 according to another embodiment, and FIG. 7B shows a bottom plan view of the light emitting device 100-2 shown in FIG. 7A. 7A and 7B may be examples including the second passivation layer 124a of FIG. 6 , but are not limited thereto, and may be equally applied to the light emitting device 100 shown in FIG. 3 .

3 and 6, the first electrode 130 is positioned so as to be aligned with the center of the upper and lower surfaces of the light emitting structure 110, while the first electrode 130b of the embodiment shown in FIGS. 7a and 7b ) May be located adjacent to any one side of the side of the light emitting structure (110).

Although the arrangement of the first electrode 130 in FIGS. 3 and 6 can improve current dissipation efficiency compared to the arrangement of the first electrode 130b in FIGS. 7A and 7B , the package body bonded to the first electrode The first electrode may be disposed in various positions according to the arrangement and structure of a package body, a submount, or a conductive layer of a substrate.

For example, the light emitting structure 110 may include first and second side surfaces 110-1 and 110-2 facing each other and third and fourth side surfaces 110-3 and 110-4 facing each other. and the first electrode 130b may be positioned closer to the second side surface 110-2 than the first side surface 110-1.

The shortest distance between the first side surface 110-1 and the through electrode 132 of the first electrode 130b may be different from the shortest distance between the second side surface 110-2 and the through electrode 132. For example, the shortest distance between the first side surface 110-1 and the through electrode 132 of the first electrode 130b may be greater than the shortest distance between the second side surface 110-2 and the through electrode 132.

The first and second side surfaces 110 - 1 and 110 - 2 may be short side surfaces, and the third and fourth side surfaces 110 - 3 and 110 - 4 may be long side surfaces. For example, the horizontal length of each of the first and second side surfaces 110-1 and 110-2 may be shorter than the horizontal length of each of the third and fourth side surfaces 110-3 and 110-4.

Also, for example, the shortest distance from the third side surface 110-3 to the first electrode 130b, for example, through electrode 132, is from the fourth side surface 110-4 to the first electrode 130b, such as through electrode 132. It may be equal to the shortest distance to (132).

The light emitting devices 100, 100-1, and 100-2 shown in FIGS. 3, 6, 7A, and 7B may have a chip size (eg, a maximum diameter of the chip) of less than 100 micrometers. As such, it is not easy to form bonding pads for wire bonding of light emitting devices having a diameter of less than 100 microns. The light emitting device according to the embodiment is provided with the first electrode 130 penetrating both the light emitting structure 110 and the insulating layer 150, thereby flip-chip bonding on the same side of the light emitting structure 110 having a small area. Alternatively, a first electrode pad (eg, n-type electrode pad) and a second electrode pad (eg, p-type electrode pad) for die bonding may be easily implemented.

8A shows an upper plan view of a light emitting device 100-3 according to another embodiment, FIG. 8B shows a lower plan view of the light emitting device 100-3 shown in FIG. 8A, and FIG. 9 shows FIGS. 8A and 8A. I-II cross-sectional views of the light emitting device 100-3 shown in FIG. 8B are shown.

Referring to FIGS. 8A, 8B, and 9 , the light emitting element 100-3 includes a light emitting structure 110', a passivation layer 124a, a first electrode 130-1, and a first electrode pad 135'. ), a second electrode 140a, a second electrode pad 145', and an insulating layer 150a.

The light emitting structure 110' includes a first conductivity type semiconductor layer 112, an active layer 114, and a second conductivity type semiconductor layer 116, but unlike the light emitting structure 110 shown in FIG. 3, the first It does not have a through hole 301. Descriptions of FIGS. 1 to 3 may be equally applied to the first conductivity type semiconductor layer 112 , the active layer 114 , and the second conductivity type semiconductor layer 116 .

The second electrode 140a is disposed on the lower surface of the second conductivity type semiconductor layer 116 and may make ohmic contact with the second conductivity type semiconductor layer 116 . The description of the second electrode 140 may be equally applied to the material of the second electrode 140a.

The insulating layer 150a is disposed on the side and bottom surfaces of the light emitting structure 110'. For example, the insulating layer 150a includes the first insulating layer 152a disposed on the lower surface of the second conductive semiconductor layer 116 and the second insulating layer 154a disposed on the side surface of the light emitting structure 110'. can include

For example, the first insulating layer 150a may be disposed on an edge region of the lower surface of the second electrode 140a disposed on the lower surface of the second conductive semiconductor layer 116, and may be disposed on the lower surface of the second electrode 140a. Some areas of the can be exposed.

Description of the first insulating layer 152 of FIG. 3 may be applied to the first insulating layer 152a of FIG. 9 , and description of the second insulating layer 154 of FIG. 3 may be applied to the second insulating layer 152 of FIG. 9 . (154).

The second electrode pad 145' may be disposed below a portion of the lower surface of the second electrode 140a exposed by the first insulating layer 152a, and is connected to the exposed portion of the second electrode 140a. or can be contacted.

The first electrode pad 135' is disposed under the first insulating layer 152a, and electrical contact with the second conductive semiconductor layer 116 can be prevented by the first insulating layer 152a.

For example, in order to facilitate connection with the first electrode 130-1, the first electrode pad 135' is adjacent to or in contact with a portion where the first insulating layer 152a and the second insulating layer 154a meet. can be positioned to do so.

The description of the first electrode pad 135 may be applied to the first electrode pad 135' as shown in FIG. 9 .

The passivation layer 124a is disposed on the top surface of the first conductivity type semiconductor layer 112 .

The first electrode 130-1 is disposed on the passivation layer 124a and the second insulating layer 154a.

One end of the first electrode 130-1 may pass through the passivation layer 124a and contact the upper surface of the first conductive semiconductor layer 112, and the other end may be connected to or contact the first electrode pad 135'. It can be.

For example, the first electrode 130-1 is an upper electrode 134a disposed on the passivation layer 124a, and the upper electrode penetrates the passivation layer 124a to contact the top surface of the first conductivity type semiconductor layer 112. A contact electrode 136a extending from the lower surface of 134a, and a connection electrode 132a disposed on the second insulating layer 154a and connecting the upper electrode 134a and the first electrode pad 135'. do.

The upper electrode 134a may be aligned or overlapped with the edge of the light emitting structure 110 in a vertical direction. Also, the upper electrode 134a may be vertically aligned with or overlap the first electrode pad 135'.

For example, the contact electrode 135a may be vertically aligned with or overlap the first electrode pad 135'. By arranging the contact electrode 135a and the first electrode pad 135' to overlap in the vertical direction, the diameter of the light emitting element 100 in the horizontal direction can be reduced, and the size of the light emitting element 100 can be reduced. can

In FIG. 3, the upper electrode 134 and the first electrode pad 135 are connected by the through electrode 132 penetrating the light emitting structure 110, but in FIG. The upper electrode 134a and the first electrode pad 135' may be connected by the connection electrode 132a disposed on the second insulating layer 154a disposed on the side surface of the structure 110'.

The first electrode 130-1 of FIG. 9 includes the upper electrode 134a and the first electrode by the connection electrode 132a disposed on the second insulating layer 154a disposed on the side surface of the light emitting structure 110'. Since the pad 135' is connected, the embodiment shown in FIG. 9 can increase a light emitting area and improve light extraction efficiency.

10A to 10I are process charts showing a method of manufacturing the light emitting device 100-1 shown in FIG.

Referring to FIG. 10A , a light emitting structure 110 is formed on a growth substrate 410 .

For example, the first conductivity type semiconductor layer 112 , the active layer 114 , and the second conductivity type semiconductor layer 116 may be sequentially formed on the growth substrate 410 . In order to distinguish individual chips, a side surface of the light emitting structure 1110 may be an inclined surface with respect to the growth substrate 1410 by an isolation etching process for the light emitting structure 110 .

Although not shown in FIG. 10A , a buffer layer or a buffer layer is formed between the growth substrate 410 and the light emitting structure 110 in order to relieve stress caused by a difference in lattice constant between the light emitting structure 110 and the growth substrate 410 . An undoped-semiconductor layer, for example, an undoped GaN layer may be further formed.

Herein, the undoped GaN may be grown into Unintentionally doped GaN (hereinafter referred to as "UID GaN"), particularly n-type UID GaN. For example, in the GaN growth process, even in a region where n-type dopant is not supplied, N-vacancy in which N (sodium) is deficient may occur. Although not intended in, UID GaN may exhibit electrical properties similar to those doped with an n-type dopant.

The growth substrate 410 is a substrate suitable for growing a nitride semiconductor single crystal, for example, any one of a sapphire substrate, a silicon (Si) substrate, a zinc oxide (ZnO) substrate, and a nitride semiconductor substrate, or GaN, InGaN, AlGaN, and AlInGaN. At least one of them may be a laminated template substrate.

Next, referring to FIG. 10B , a second electrode 140 is formed on the second conductive semiconductor layer 116 of the light emitting structure 110 . For example, by forming a conductive material for forming the second electrode 140 on the second conductive semiconductor layer 116 and then patterning the conductive material through a photolithography process and an etching process, the second electrode 140 can form

Next, referring to FIG. 10C , an insulating material is deposited on the side surface of the light emitting structure 110 and the second conductive semiconductor layer 116 to form the insulating layer 150 . For example, the insulating layer 150 may be formed to expose a region of the upper surface of the second electrode 140 .

Next, referring to FIG. 10D , a first electrode pad 135 is formed on the insulating layer 150, and a second electrode pad 145 is formed on a region of the exposed upper surface of the second electrode 140. do.

For example, by depositing a conductive material on the second conductive semiconductor layer 116 on which the insulating layer 150 and the second electrode 140 are formed, and then patterning the deposited conductive material, the first conductive material is formed on the insulating layer 150. At the same time as forming the electrode pad 135 , the second electrode pad 145 contacting the second electrode 140 may be formed. For example, the first electrode pad 135 and the second electrode pad 145 may be formed to be spaced apart from each other so as to be electrically separated.

Next, referring to FIG. 10E , a support substrate 401 including a temporary substrate 420 and a sacrificial layer 430 formed on the temporary substrate 420 is prepared.

The first and second electrode pads 135 and 145 are bonded to the sacrificial layer 430 by an adhesive member (not shown) such as silicon. Then, in a state where the first and second electrode pads 135 and 145 are bonded to the sacrificial layer 430 , the growth substrate 410 is removed by a laser lift off (LLO) process. After FIG. 10E, the light emitting structure 110 shown in FIG. 10D is shown rotated by 180°.

In a general vertical light emitting device in which the first electrode pad and the second electrode pad are disposed on opposite sides of the light emitting structure, since the LLO process is performed while only the second electrode pad is bonded to the support substrate, the second electrode pad is bonded to the support substrate by the LLO process. Electrode pads may be damaged or broken.

On the other hand, in the embodiment, both the first and second electrode pads are disposed on the same side of the light emitting structure 110, and the first and electrode pads 135 and 145 are bonded to the sacrificial layer 430 before the LLO process. Therefore, the growth substrate 410 can be removed by the LLO process in a state in which the light emitting structure 110 and the support substrate 401 are stably bonded, and thereby the second electrode pad 145 due to the LLO process damage can be prevented.

Next, referring to FIG. 10F , the buffer layer or the undoped semiconductor layer formed between the light emitting structure 110 and the growth substrate 410 is removed through etching or the like. Then, the light extracting structure 112a is formed on the surface of the first conductivity-type semiconductor layer 112 exposed by the removal of the growth substrate 410 through etching or the like.

Next, referring to FIG. 10G, a first through hole 301 penetrating the light emitting structure 110 and the insulating layer 150, for example, the first insulating layer 152 (see FIG. 6) is formed through etching. . The first through hole 301 may expose an upper surface of the first electrode pad 135 .

Next, referring to FIG. 10H , a passivation layer is formed by depositing a light-transmitting insulating material on the surface of the first conductivity-type semiconductor layer 112 exposed by the removal of the growth substrate 410 and on the side surfaces of the first through hole 301 . (120). For example, the second passivation layer 124a (see FIG. 6) is formed on the surface of the first conductivity-type semiconductor layer 112 exposed by the removal of the growth substrate 410, and at the same time, the side surface of the first through hole 301 is formed. A first passivation layer 122 (see FIG. 6) may be formed on the surface.

Then, the second passivation layer 124a is etched to form a second through hole 302 exposing a portion of the surface of the first conductivity type semiconductor layer 112 exposed by the removal of the growth substrate 410 .

As shown in FIG. 3 , the embodiment shown in FIG. 3 may be implemented by patterning the second passivation layer 124a to expose the surface of the first conductivity type semiconductor layer 112 .

Next, referring to FIG. 10I, a conductive material is deposited on the first and second passivation layers 122 and 124a to fill the first through hole 301 and the second through hole 302, and the deposited The first electrode 130 may be formed by patterning a conductive material. At this time, the conductive material filled in the first through hole 301 may contact the first electrode pad 135, and the conductive material filled in the second through hole 302 may contact the surface of the first conductivity type semiconductor layer. there is.

Next, referring to FIG. 10J , the temporary substrate 420 may be removed by removing the sacrificial layer 430 using chemical etching, thereby obtaining the light emitting device 100-1 according to the embodiment.

11 is a cross-sectional view of a lighting device 200 according to an embodiment.

Referring to FIG. 11 , the lighting device 200 includes a substrate 510, a body 520, at least one light emitting device (eg, 530-1 to 530-5), and a light transmitting member 540.

The substrate 510 may be a printed circuit board including first and second wiring layers 512 and 514 and an insulating layer 515 . For example, the substrate 510 may be a flexible circuit board.

The first and second wiring layers 512 and 514 may be disposed spaced apart from each other on the substrate 510, and the insulating layer 515 may be formed between the first and second wiring layers 512 and 514 on the substrate 510. ) to electrically insulate between the first and second wiring layers 512 and 514. Alternatively, in another embodiment, the insulating layer 515 may be omitted.

At least one light emitting element (eg, 530-1 to 530-5) is disposed on the substrate 510 and electrically connected to the first and second wiring layers 512 and 514. At least one light emitting device (eg, 530-1 to 530-5) may be any one of the light emitting devices 100 and 100-1 to 100-3 according to the above-described embodiment.

The body 520 is disposed on the substrate 510 and reflects light emitted from at least one light emitting device (eg, 530-1 to 530-5).

For example, the body 520 may have a cavity, and at least one light emitting device (eg, 530-1 to 530-5) may be disposed in the cavity.

For example, the body 520 may include a number of cavities corresponding to the number of light emitting elements, and a corresponding one of the light emitting elements may be disposed in each of the cavities.

In addition, the body 520 may have a barrier rib 520a surrounding at least one light emitting element (eg, 530-1 to 530-5). A side surface of the barrier rib 520 may be an inclined surface inclined with respect to the upper surface of the substrate 510 and may reflect light emitted from at least one light emitting device (eg, 530-1 to 530-5).

In FIG. 11, the number of light emitting devices is 5, but is not limited thereto. When the lighting device 200 includes a plurality of light emitting devices, the lighting device may be implemented as a light emitting module.

Also, for example, in another embodiment, the number of light emitting devices may be one, the body 520 may have one cavity in which the light emitting device is disposed, and the lighting device 100 according to the embodiment may be in the form of a light emitting device package. can be implemented

Also, for example, when the lighting device 200 includes a plurality of light emitting elements and the plurality of light emitting elements emit blue light, red light, or green light, it may be implemented as a light source of a display device that displays an image.

Since the thickness of the light emitting elements according to the embodiment can be reduced, the display device including the light emitting elements can be reduced in size, for example, in thickness.

A general horizontal type light emitting device includes a growth substrate (eg, a sapphire substrate), but the light emitting devices (eg, 530-1 to 530-5) of the embodiment do not include a growth substrate, so the thickness can be reduced.

While a typical vertical light emitting device has a first electrode pad and a second electrode pad disposed on opposite sides of the light emitting structure, the light emitting devices (eg, 530-1 to 530-5) of the embodiment have first and second electrode pads. Since the electrode pads 135 and 145 are located on the same side of the light emitting structure, the thickness can be reduced.

The light transmitting member 540 is disposed in the cavity of the body 520 to surround the light emitting devices 530-2 to 530-5. The light-transmitting member 540 may prevent damage to the light emitting device due to external impact and may prevent discoloration of the light emitting devices 530-2 to 530-5 due to moisture. In other embodiments, the light transmitting member 540 may be omitted.

FIG. 12 is a plan view of a display device 3000 according to an embodiment, and FIG. 13 is a cross-sectional view of the display device 3000 shown in FIG. 12 in an AA′ direction according to an embodiment.

The display device 3000 of FIG. 12 includes a mobile phone, a smart phone, a notebook computer, a digital broadcasting terminal, a PDA (Personal Digital Assistants), a PMP (Portable Miltimedia Player), a navigation device, a slate PC, and a tablet. (Tablet) PCs, digital TVs, and desktop computers may be included, and may be implemented as a flat panel display or a flexible display. Also, the display device 3000 may be implemented as a display panel.

Visual information expressed by the display device 3000 may be implemented by controlling light emission of sub-pixels arranged in a matrix form. In this case, the unit pixel may be a minimum unit for realizing one color formed by a combination of R (Red), G (Green), and B (Blue). The light emitting device according to the above-described embodiment may serve as a unit pixel of the display device 3000 .

12 and 13, a display device 3000 includes a substrate 3100, a first wire electrode 3112a, a second wire electrode 3114a, a body 3520a having a barrier rib 3520a, and a plurality of It may include a matrix-type unit pixel array (P11 to Pnm, where n, m is a natural number > 1) including light emitting devices (eg, 3530-1' to 3530-5'), and a light transmitting member 3540. .

The substrate 3100 may be a flexible substrate. For example, the substrate 3100 may include glass or polyimide, and may include an insulating material such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET) for insulation. The substrate 3100 may be transmissive, but is not limited thereto, and may be opaque in other embodiments.

A plurality of light emitting devices (eg, 3530-1' to 3530-5') may be disposed on the substrate 3100 in an m×n matrix form. 13 shows only five light emitting elements, but the number of light emitting elements of the display device 3000 may be the number included in the m×n matrix.

The barrier rib 3520a is disposed between the plurality of light emitting elements (eg, 3530-1' to 3530-5'), and a black insulator is used to increase contrast according to the purpose of the display device 3000. or may include a white insulator to increase reflectivity.

Description of the barrier rib 520a, the body 520, and the light-transmitting member 540 of FIG. 11 may be applied to the barrier rib 3520a, the body 3520, and the light-transmitting member 3540.

Each of the light emitting devices (eg, 3530-1' to 3530-5') may be any one of the embodiments shown in FIGS. 3, 6, 7a, 8a, and 9 .

The first wiring electrode 3112a is disposed on the lower surface of the substrate 3100 and penetrates the substrate 3100 to form first electrode pads 135 of each of the light emitting elements (eg, 3530-1' to 3530-5'). and the second wire electrode 3114a may pass through the substrate 3100 and be bonded to the second electrode pad 145 .

Each of the first and second wire electrodes 3112a and 3114a may be exposed from the lower surface of the substrate 3100, but is not limited thereto. 13, the first and second wire electrodes 3112a and 3114a pass through the substrate 3100, but is not limited thereto, and in another embodiment, the first and second wire electrodes 3112a and 3114a It may be positioned on the substrate 3100 without penetrating the substrate 3100 .

Although not shown in FIGS. 12 and 13, in order to prevent an electrical short between the first and second wire electrodes 3112a and 3114a, an embodiment is a substrate between the first and second wire electrodes 3112a and 3114a ( 3100) an insulating layer may be further provided on the lower surface.

Each of the light emitting elements (eg, 3530-1' to 3530-5') may include a light emitting element emitting blue light, a light emitting element emitting red light, and a light emitting element emitting green light, and may be configured in a row direction and a column direction. A light emitting element emitting red light, a light emitting element emitting green light, and a light emitting element emitting blue light may be sequentially and repeatedly disposed. In this case, light emitting devices that emit red light, green light, and blue light, for example, unit pixels may form one image pixel.

In the unit pixel array, the area of the light emitting region of the light emitting element emitting red light (hereinafter referred to as “red light emitting region”), the area of the light emitting region of the light emitting element emitting green light (hereinafter referred to as “green light emitting region”), and blue light Areas of light emitting regions (hereinafter, referred to as “blue light emitting regions”) of light emitting elements generating light may be different from each other. For example, the areas of the green light emitting region and the red light emitting region having relatively low luminous efficiency may be larger than those of the blue light emitting region.

For example, the area of the green light emitting region may be 1 to 4 times the area of the blue light emitting region, and the area of the red light emitting region may be 1 to 3 times the area of the blue light emitting region.

Also, for example, in another embodiment, the areas of the red light emitting region and the green light emitting region may be equal to each other.

For example, the ratio of the area of the blue light emitting region, the area of the red light emitting region, and the area of the green light emitting region may be 1:2:3 or 1:3:3, but is not limited thereto.

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified with respect to other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to these combinations and variations should be construed as being included in the scope of the present invention.

110: light emitting structure 120: passivation layer
130: first electrode 135: first electrode pad
140: second electrode 145: second electrode pad
150: insulating layer.

Claims (15)

A light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
a first insulating layer disposed under the second conductivity type semiconductor layer;
a first electrode pad and a second electrode pad disposed to be spaced apart from each other under the first insulating layer;
An upper electrode disposed on the first conductivity-type semiconductor layer and the upper electrode and the first electrode passing through the first conductivity-type semiconductor layer, the active layer, the second conductivity-type semiconductor layer, and the first insulating layer a first electrode including a penetration electrode connecting the pads to each other;
a second electrode disposed on the second conductivity type semiconductor layer and connected to the second electrode pad;
a first passivation layer disposed between the through electrode and the light emitting structure; and
A second passivation layer disposed between the upper electrode and the first conductivity-type semiconductor layer;
The first electrode includes a contact electrode passing through the second passivation layer, one end connected to the upper electrode and the other end in contact with the first conductivity type semiconductor layer,
The contact electrode is a light emitting element disposed spaced apart from the through electrode. According to claim 1,
The through-electrode and the contact electrode do not overlap in a vertical direction. According to claim 1,
The second electrode is disposed to surround the through electrode exposed from the lower surface of the second conductivity type semiconductor layer. According to claim 1,
The contact electrode overlaps the first electrode pad in a vertical direction. According to claim 1,
Light emitting device comprising a second insulating layer disposed on the side of the light emitting structure. According to claim 1,
The second electrode pad has a structure that is convexly bent in a direction from the second conductivity-type semiconductor layer toward the first conductivity-type semiconductor layer. According to claim 1,
The light emitting element of claim 1 , wherein a diameter of the through electrode gradually decreases as it progresses in a direction from the first conductivity type semiconductor layer to the second conductivity type semiconductor layer. According to claim 1,
The contact electrode has a ring shape surrounding the through electrode. The method of claim 1, wherein the contact electrode,
A light emitting device including a plurality of contact electrodes disposed spaced apart from each other around the through electrode. According to claim 1,
The through-electrode overlaps with the first electrode pad in a vertical direction. a substrate including a first wiring electrode and a second wiring electrode; and
It includes a plurality of light emitting elements arranged in a matrix form on the substrate,
The plurality of light emitting elements include a first light emitting element generating red light, a second light emitting element generating green light, and a second light emitting element generating blue light,
Each of the plurality of light emitting elements is a light emitting element according to any one of claims 1 to 10,
A first electrode pad of each of the plurality of light emitting elements is bonded to the first wire electrode, and a second electrode pad of each of the plurality of light emitting elements is bonded to the second wire electrode.
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