CN103999195A - 将粘合膜在切割带上制备成预切割的半导体晶圆形状的方法 - Google Patents

将粘合膜在切割带上制备成预切割的半导体晶圆形状的方法 Download PDF

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CN103999195A
CN103999195A CN201280058432.7A CN201280058432A CN103999195A CN 103999195 A CN103999195 A CN 103999195A CN 201280058432 A CN201280058432 A CN 201280058432A CN 103999195 A CN103999195 A CN 103999195A
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Y·金
J·格雷
K·贝克尔
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Henkel AG and Co KGaA
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Abstract

本发明提供一种用于从托架支撑带移除导电性晶片附连粘合膜的被修剪掉的残余部的方法。粘合膜设在支撑托架和离型膜之间；离型膜和粘合膜被切成符合半导体晶圆形状的形状。在移除残余的离型膜之后，临时性粘合片安装在且附着至围绕切割形状的露出的传导性晶片附着膜，并且安装在且附着至在切割形状上的残余的离型膜；移除临时性粘合片，并且由于其对粘合膜和离型膜的粘合性能，残余的粘合膜和残余的离型膜连同临时性粘合片一起被移除。

Description

将粘合膜在切割带上制备成预切割的半导体晶圆形状的方法
技术领域
本发明涉及在切割带上制备晶片附着粘合剂的制造过程中的一种用于从托架支撑带将粘合膜的被修剪掉的残余部移除的方法。
背景技术
集成电路在半导体晶圆的表面上制造，所述半导体晶圆由诸如硅和砷化镓的材料组成。晶圆随后通过用锯或者激光将晶圆切块而被分成单个集成电路。用锯或者激光将晶圆切块使得晶圆受压。为了抵消该压力，该晶圆在切块操作期间被支撑在称作切割带的片或带子上。切块之后，单个集成电路从晶圆被分开，并且随后被粘接至基底，所述基底用于为最终的电子设备制造电路。
用粘合剂来完成将集成电路粘接至其基底，所述粘合剂已知为晶片附着粘合剂，其包括粘合剂树脂和按重量计算达大约90％的导电填料。晶片附着粘合剂可涂覆至晶片的与包含电路的侧相反的侧或者直接涂覆至基底。如今的制造操作喜好在切块之前将晶片附着粘合剂直接涂覆至晶圆的背面，因为这比将晶片附着粘合剂涂覆至每个单个的集成电路或者基底上的粘接位置更高效。
用于晶圆涂覆的晶片附着粘合剂以半导体晶圆形状的膜设在支撑托架上。为了获取该形状，支撑托架被涂以粘合剂从而在支撑托架上形成粘合剂的膜，半导体的图形被刻入粘合膜内，并且残余的粘合剂被从支撑托架修剪掉并移除。为了帮助满足小型化的需求，所述粘合膜是薄的，并且其高度地用导电填料填充，从而变得易碎。随着被修剪掉的残余部被机械剥离，粘合膜上的张力使得其断裂，因而一些被修剪掉的残余部粘合剂未从支撑托架移除。这种残余部粘合膜随后必须手工移除，使得在制造过程中产生了中断并且产生了制造时间的损失。从而需要一种途径来在一个操作中从支撑托架完全移除残余部粘合剂，只将粘合膜留在半导体晶圆的图形中以用于随后层压至所述晶圆。
发明内容
本发明针对一种将被修剪掉的残余粘合膜从支撑托架移除的方法。该方法包括：(a)提供支撑托架、粘合膜和离型膜的组件，依此顺序，将图形从离型膜的方向穿过离型膜、穿过粘合膜刻入所述组件内，并且部分地刻入支撑托架内；(b)从围绕被刻入的图形的粘合膜移除离型膜，以使围绕被刻入的图形的粘合膜露出；(c)将临时性粘合片附着在露出的围绕被刻入的图形的粘合膜上以及被刻入的图形的离型膜上，其中，临时性粘合片对粘合膜的粘合度高于粘合膜对支撑托架的粘合度，并且临时性粘合片对离型膜的粘合度高于离型膜对粘合膜的粘合度；以及(d)将已附着至露出的粘合膜并附着至余下的离型膜的临时性粘合片移除，藉此从支撑托架移除粘合膜并且从粘合膜的被刻入的图形移除离型膜，从而将粘合膜的被刻入的图形留在支撑托架上。
附图说明
图1是对用于制备用于安装在半导体晶圆上的粘合膜的过程的描述。
具体实施方式
为了制备应用于半导体晶圆的晶片附着粘合剂，晶片附着粘合剂首先被涂在托架支撑带或片(下文中称为“托架支撑”)上并被加热，以移除溶剂(如果存在)或者使粘合剂部分地固化。这被称作B-阶段，并且使得粘合剂成膜形式(此处为“粘合膜”)并与加热之前相比呈更不胶黏的状态。
合适的晶片附着粘合剂在本领域中是熟知的，且在许多情况下由环氧树脂、双马来酰亚胺树脂、丙烯酸树脂、或者这些的组合所组成。晶片附着粘合剂的实际选择并非本发明的关键。
保护带或者片(此处称为“离型膜”)随后用压力和/或热层压至粘合膜；离型膜临时地保护粘合膜，直至粘合膜准备好用于后续制造步骤。选择离型膜是因为其性能是能够从粘合膜容易且干净地释放。
支撑托架和离型膜可由相同或不同的材料组成。一种合适的材料是来自圣戈班高功能塑料公司(St.Gobain Performance Plastics)的编号8322的产品，该产品可用于支撑托架和离型膜两者。通常，B-阶段操作使得粘合膜相比附着至离型膜更加牢固地附着至支撑托架。这种释放上的差别也可通过选择具有不同释放性能的离型膜和支撑托架来实现，以使得从粘合膜移除离型膜比从支撑托架移除粘合膜更容易。
现在将结合图1、示图A到F来描述本发明。示图G、H、和I是应用于半导体晶圆的导电性晶片附连粘合膜的整个制备过程中的随后的且分开的加工步骤。元件10到15在所有示图中都是相同的，并且在介绍后在随后的示图中被省略以保持示图的简洁。
为了以用于贴附至半导体晶圆的形式提供粘合膜，半导体晶圆的图形被刻入离型膜、粘合膜、和支撑托架的组件内。所述图形通常是圆形的，且通常稍大于半导体晶圆的尺寸。例如，当晶圆直径是200mm时，被刻入的形状的直径通常是220mm。该数值根据需要可由制造商修改。下文中，“被刻入的图形”将意指按照半导体晶圆的形状或稍大的形状被切出的离型膜或粘合膜或两者；“残余的离型膜”、“残余的粘合膜”、以及“残余的切割带”将意指那些材料(离型膜、粘合膜、切割带)的并非“被刻入的图形”部分的、在刻入操作之后被修剪掉的部分。
所述刻入从离型膜的方向穿过离型膜、穿过粘合膜进行，并且稍稍进入支撑托架内。稍稍切入支撑托架内使得在后续操作中易于将粘合膜的被刻入的图形从支撑托架移除成半导体晶圆。参考图1，示图A示出刻入刀具10、离型膜11、粘合膜12、和支撑托架13；示图B示出刻入口。
围绕被刻入的图形的残余的离型膜随后被移除，以使围绕被刻入的图形的粘合膜露出，但离型膜的在粘合膜上的被刻入的图形被保留在位。这在图1的示图C中描述。
现在参考图1、示图D，临时性粘合片14被安装在将离型膜和粘合膜的被刻入的图形围绕起来的露出的粘合膜上，并且被安装在离型膜的在粘合膜的被刻入的图形上保留在位的被刻入的图形上。临时性粘合片被选择成：使其对粘合膜的粘合性高于粘合膜对支撑托架的粘合性，并且使其对离型膜的粘合性高于离型膜对粘合膜的粘合性。随后移除临时性粘合片，如示图E中所示。由于其粘合性能，所述临时性粘合片附着至残余的粘合膜并将残余的粘合膜从支撑托架移除，并且所述临时性粘合片附着至与粘合膜的被刻入的图形附着的被刻入的离型膜、并将与粘合膜的被刻入的图形附着的被刻入的离型膜作为残余部移除。该步骤在支撑托架上留下了粘合膜的被刻入的图形，如示图F中所示。
市售的临时性粘合片或带是可使用的；一种合适的片是硅树脂涂层的2mil PET片，其具有来自Sekisui TA Industries Tape的水基丙烯酸压敏粘合剂。
在随后的制造步骤中，切割带15设在粘合膜和围绕粘合膜的被刻入的图形的支撑托架表面上，如示图G中所示。市售的切割带是来自Denka的编号ERX-6140和ERX-0045的产品。刻入刀具10用于切穿切割带和围绕粘合膜的被刻入的图形的支撑托架，如示图H中所示。残余的切割带被移除，将半导体晶圆图形中的粘合膜留在支撑托架上并以切割带来保护，如示图I中所示。

Claims (1)

1.一种从托架支撑带移除粘合膜的被修剪掉的残余部的方法，所述方法包括：
(a)提供支撑托架、粘合膜和离型膜的组件，依此顺序，将图形从离型膜的方向穿过离型膜、穿过粘合膜刻入所述组件内，并且部分地刻入支撑托架内；
(b)从围绕被刻入的图形的粘合膜移除离型膜，以使围绕被刻入的图形的粘合膜露出；
(c)将临时性粘合片附着在露出的围绕被刻入的图形的粘合膜上以及被刻入的图形的离型膜上，其中，临时性粘合片对粘合膜的粘合度高于粘合膜对支撑托架的粘合度，并且临时性粘合片对离型膜的粘合度高于离型膜对粘合膜的粘合度；和
(d)将已附着至露出的粘合膜并附着至余下的离型膜的临时性粘合片移除，藉此从支撑托架移除粘合膜并且从粘合膜的被刻入的图形移除离型膜，从而将粘合膜的被刻入的图形留在支撑托架上。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113470867A (zh) * 2020-03-31 2021-10-01 东友精细化工有限公司 导电膜层压体及其制造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7021687B2 (ja) * 2020-07-01 2022-02-17 住友ベークライト株式会社 半導体素子保護用粘着テープおよび半導体素子保護用粘着テープの製造方法
KR102602263B1 (ko) 2021-10-01 2023-11-16 거림테크 주식회사 무기재테이프 형상가공장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1497703A (zh) * 2002-10-15 2004-05-19 日东电工株式会社 切割/冲模-结合膜，固定碎片机件和半导体设备的方法
JP2010212709A (ja) * 2010-04-23 2010-09-24 Sony Chemical & Information Device Corp 半導体チップの製造方法
WO2010131616A1 (ja) * 2009-05-12 2010-11-18 電気化学工業株式会社 粘着剤、粘着シート及び電子部品の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5372883A (en) * 1990-03-20 1994-12-13 Staystik, Inc. Die attach adhesive film, application method and devices incorporating the same
US5344680A (en) * 1991-10-09 1994-09-06 Gerber Scientific Products, Inc. Sign making web with tack killing overcoat removable by washing and related method
JPH05143001A (ja) * 1991-11-25 1993-06-11 Sekisui Chem Co Ltd シート状物の部分剥離方法
US7169643B1 (en) * 1998-12-28 2007-01-30 Seiko Epson Corporation Semiconductor device, method of fabricating the same, circuit board, and electronic apparatus
US20070241303A1 (en) * 1999-08-31 2007-10-18 General Electric Company Thermally conductive composition and method for preparing the same
JP3544362B2 (ja) * 2001-03-21 2004-07-21 リンテック株式会社 半導体チップの製造方法
JP2005162818A (ja) * 2003-12-01 2005-06-23 Hitachi Chem Co Ltd ダイシングダイボンドシート
JP4672384B2 (ja) * 2004-04-27 2011-04-20 大日本印刷株式会社 Ｉｃタグ付シートの製造方法、ｉｃタグ付シートの製造装置、ｉｃタグ付シート、ｉｃチップの固定方法、ｉｃチップの固定装置、およびｉｃタグ
US20060252234A1 (en) * 2004-07-07 2006-11-09 Lintec Corporation Hardenable pressure sensitive adhesive sheet for dicing/die-bonding and method for manufacturing semiconductor device
US7541203B1 (en) * 2008-05-13 2009-06-02 International Business Machines Corporation Conductive adhesive for thinned silicon wafers with through silicon vias
JP2011009425A (ja) * 2009-06-25 2011-01-13 Sumitomo Bakelite Co Ltd 半導体素子の製造方法および半導体装置の製造方法
WO2011109442A2 (en) * 2010-03-02 2011-09-09 Oliver Steven D Led packaging with integrated optics and methods of manufacturing the same
JP2012236899A (ja) * 2011-05-11 2012-12-06 Hitachi Chemical Co Ltd 接着シートの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1497703A (zh) * 2002-10-15 2004-05-19 日东电工株式会社 切割/冲模-结合膜，固定碎片机件和半导体设备的方法
WO2010131616A1 (ja) * 2009-05-12 2010-11-18 電気化学工業株式会社 粘着剤、粘着シート及び電子部品の製造方法
JP2010212709A (ja) * 2010-04-23 2010-09-24 Sony Chemical & Information Device Corp 半導体チップの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113470867A (zh) * 2020-03-31 2021-10-01 东友精细化工有限公司 导电膜层压体及其制造方法

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