CN103972239A - 显示器 - Google Patents
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- CN103972239A CN103972239A CN201310486576.9A CN201310486576A CN103972239A CN 103972239 A CN103972239 A CN 103972239A CN 201310486576 A CN201310486576 A CN 201310486576A CN 103972239 A CN103972239 A CN 103972239A
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- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000004888 barrier function Effects 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 36
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 239000010953 base metal Substances 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01—ELECTRIC ELEMENTS
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- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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Abstract
本发明提供一种显示器,其包括设置在基板上的信号线。信号输入线设置在基板上并连接到驱动器。第一绝缘层设置在信号线上。第二绝缘层设置在信号输入线和第一绝缘层上。第一接触孔穿透第一绝缘层和第二绝缘层并且暴露出信号线的一部分。第二接触孔穿透第二绝缘层并且暴露出信号输入线的一部分。连接构件通过第一和第二接触孔连接信号线和信号输入线,并且设置在第二绝缘层上。第一和第二接触孔交替地布置在第二绝缘层中。
Description
技术领域
本发明涉及一种显示器。
背景技术
显示器的像素被驱动器驱动以显示图像。驱动器包括数据驱动器和扫描驱动器,该数据驱动器施加数据电压到像素,该扫描驱动器施加控制数据电压的传输的栅极信号。包括驱动器的分离芯片封装可以安装在印刷电路板(PCB)上并且连接到显示面板。驱动器可以与显示面板集成。
发明内容
根据本发明的示范性实施方式,提供了一种显示器。该显示器包括设置在基板上的信号线。信号输入线设置在基板上并连接到驱动器。第一绝缘层设置在信号线上。第二绝缘层设置在信号输入线和第一绝缘层上。多个第一接触孔穿透第一绝缘层和第二绝缘层并且暴露出信号线的一部分。多个第二接触孔穿透第二绝缘层并且暴露出信号输入线的一部分。连接构件通过多个第一接触孔和多个第二接触孔连接信号线和信号输入线,并设置在第二绝缘层上。多个第一接触孔和多个第二接触孔交替地布置在第二绝缘层中。
根据本发明的示范性实施方式,提供了一种显示器。该显示器包括设置在基板上的第一信号线,其中第一信号线包括在第一方向上延伸的线部分和在第二方向上从线部分突出的多个第一连接区域。第二信号线设置在基板上并且包括在第一信号线的多个第一连接区域周围弯曲的线部分。第一信号输入线设置在基板上并且在第二方向上延伸,其中第一信号输入线包括连接到驱动器的一个端部以及具有多个第二连接区域的另一端部。多个第一接触孔设置在多个第一连接区域的相应一个上。多个第二接触孔设置在多个第二连接区域的相应一个上。连接构件通过多个第一接触孔和多个第二接触孔连接第一信号线和第一信号输入线。
附图说明
本发明的这些和其他特征将通过参考附图详细描述其示范性实施方式而变得更明显,在附图中:
图1为根据本发明的示范性实施方式的显示器的框图;
图2为根据本发明的示范性实施方式的显示器的一部分外围区的俯视平面图;
图3为沿着图2的线III-III′获得的根据本发明的示范性实施方式的显示器的一部分外围区的截面图;以及
图4为图2所示的区域“A”的放大视图。
具体实施方式
下文将参考附图更详细地描述发明构思的示范性实施方式。然而,发明构思可以以不同的形式实施,而不应理解为限于在此阐述的实施方式。在附图中,为了清楚可以夸大层和区域的厚度。还将理解的是,当一层被称为在另一层或基板“上”时,它可以直接在另一层或基板上,或者也可以存在居间层。在说明书和附图通篇中,相同的附图标记可指代相同的元件。
在下文,将参考图1描述根据本发明的示范性实施方式的显示器。
图1为根据本发明的示范性实施方式的显示器的框图。
根据本发明的示范性实施方式的显示器包括显示面板300、栅极驱动器400、数据驱动器500等。
显示面板300被分成显示区DA和外围区PA。显示面板300包括多条栅线G1-Gn、多条数据线D1-Dm以及连接到多条栅线G1-Gn和多条数据线D1-Dm的多个像素PX。多个像素PX布置在显示区DA中,外围区PA邻近显示区DA。栅线G1-Gn传输栅极信号,数据线D1-Dm传输数据电压。每个像素PX可包括连接到栅线G1-Gn之一和数据线D1-Dm之一的开关元件和像素电极。开关元件可以是集成在显示面板300中的三端元件,诸如薄膜晶体管。
数据驱动器500连接到数据线D1-Dm以传输数据电压。在示范性实施方式中,数据驱动器500可以直接安装在显示面板300的外围区PA中。在示范性实施方式中,当制造像素PX的开关元件时,数据驱动器500可以集成在外围区PA中。在示范性实施方式中,数据驱动器可以设置在附接至显示面板300的柔性印刷电路膜上。
扫描驱动器400集成在显示面板300的外围区PA中并且顺序地传输栅极信号到多条栅线G1-Gn。栅极信号包括栅极导通电压Von和栅极截止电压Voff。响应于扫描起始信号STV,栅极驱动器400开始输出栅极导通脉冲、控制栅极导通脉冲的输出时序的栅极时钟信号CPV、以及时钟信号CK和CKB,从而顺序地驱动多条栅线G1-Gn。将这些信号施加到栅极驱动器400的信号线可以设置在显示面板300的外围区PA中。
根据本发明的示范性实施方式的显示器中所包括的除显示面板300、扫描驱动器400和数据驱动器500之外的不同组成元件可包括多个电元件,诸如多个晶体管、多个电容器和多个二极管,每个电元件或连接到其的布线可包括至少一个导电层。当至少两个电元件彼此连接或一个电元件与外部信号输入/输出端彼此连接时,不同的导电层可以彼此电连接。根据本发明的示范性实施方式,不同的导电层通过连接结构而彼此电连接。
将参考图2和图3描述根据本发明的示范性实施方式的位于不同层的导电层的连接结构。
图2为根据本发明的示范性实施方式的显示器的一部分外围区的俯视平面图,图3为沿着图2的线III-III′获得的根据本发明的示范性实施方式的显示器的一部分外围区的截面图。
靠近栅极驱动器400的信号线125形成在绝缘基板110上。
信号线125设置在外围区中,并且可包括在显示区中形成栅线和栅电极的栅极导电层。信号线125可包括诸如铝(Al)或铝合金的铝基金属、诸如银(Ag)或银合金的银基金属、诸如铜(Cu)或铜合金的铜基金属、诸如钼(Mo)或钼合金的钼基金属、铬(Cr)、钽(Ta)、钛(Ti)等。然而,信号线125可具有包括至少两个导电层(未示出)的多层结构。例如,多层结构可包括双层,该双层包括下导电层和上导电层。下导电层可包括具有较低电阻率以减小信号延迟或电压降的金属,例如,铝基金属、银基金属或铜基金属。上导电层可包括具有小接触电阻的材料,诸如,钼基金属、铬、钽或钛,或者ITO(铟锡氧化物)或IZO(铟锌氧化物)的金属氧化物。例如,有铬下导电层和铝(合金)上导电层,以及铝(合金)下导电层和钼(合金)上导电层。本发明不限于此,信号线125可包括不同的金属或导体。
信号线125可以施加有时钟信号。信号线125可包括多条线。例如,如图2所示,信号线125包括三条信号线125a至125c。多条信号线125可以施加有彼此不同相位的时钟信号。备选地,信号线125可包括六条信号线125,其中三条信号线125可以施加有时钟信号,而剩余的三条信号线125可以施加有相应的互补时钟信号。多条信号线125可以彼此间隔开预定距离。
第一绝缘层140可包括无机绝缘材料,该无机绝缘材料包括硅氧化物(SiOx)和/或硅氮化物(SiNx)。第一绝缘层140设置在信号线125上。第一绝缘层140设置在包括信号线125的基板110上。
栅极驱动器400包括多个级(stage)SR,从每个级SR延伸的信号输入线175设置在第一绝缘层140上。
信号输入线175可以设置在多条信号线125之间。在图2中,栅极驱动器400包括三个级SR。栅极驱动器400的每个级SR连接到相应的信号输入线175a至175c。本发明不限于具有三个级的栅极驱动器400。例如,栅极驱动器400可包括四个或更多级SR,并且可以形成连接到所述级SR的四个或更多信号输入线175。
信号输入线175和信号线125彼此靠近地设置。信号输入线175的至少一个端部可以设置在多条信号线125之间。设置在多条信号线125之间的信号输入线175可交叠至少一个信号线125。
在图2和图3中,连接到第一级SR1的第一信号输入线175a交叠第二信号线125b和第三信号线125c。第一信号输入线175a通过连接构件195连接到第一信号线125a。第一信号线125a包括线部分和多个第一连接区域。线部分在第一方向上延伸,多个第一连接区域在与第一方向相交的第二方向上从第一信号线125a的线部分突出。第一信号输入线175a包括设置在第一信号输入线175a的端部并且在第二方向上延伸的多个第二连接区域。多个第一接触孔237设置在第一信号线125a的相应第一连接区域上并且暴露出第一信号线125a的一部分。多个第二接触孔239设置在第一信号输入线175a的相应第二连接区域上并且暴露出第一信号输入线175a的一部分。连接构件195通过多个第一接触孔237和多个第二接触孔239连接第一信号线125a和第一信号输入线175a。第一信号线125a的多个第一连接区域和第一信号输入线175a的多个第二连接区域沿着第一方向交替地设置,第一信号线125a的线部分在该第一方向上延伸。
以类似的方式,第二信号输入线175b连接在第二级SR2和第二信号线125b之间并且交叠第三信号线125c。第三信号输入线175c连接在第三级SR3和第三信号线125c之间。
第二信号线125b沿着第一方向延伸并且在第一信号线125a的连接区域周围弯曲。以类似的方式,第三信号线125c沿着第一方向延伸并且在第二信号线125b的连接区域周围弯曲。这种信号线结构使得由信号线125的连接区域引起的面积增加最小化。
在多个级SR中设置在最上侧的级SR1被认为是第一级SR1,在多个信号线125中设置在最左侧的信号线125a被认为是第一信号线125a。
在图2中,设置在信号输入线175的端部处的多个第二连接区域具有锯齿形状,然而信号输入线175的端部可具有不同的形状。
信号输入线175可包括半导体层175p和设置在半导体层175p上的金属层175q。栅极驱动器400和信号输入线175设置在外围区中。信号输入线175的半导体层175p可包括在显示区中形成半导体层的半导体材料,信号输入线175的金属层175q可包括在显示区中形成数据线、源电极和漏电极的导电层。
金属层175q可包括金属,诸如钼、铬、钽和钛、或其合金。金属层175q可具有包括至少两个导电层(未示出)的多层结构。例如,金属层175q包括双层,该双层包括铬或钼(合金)下导电层和铝(合金)上导电层。备选地,金属层175q包括三层,该三层包括钼(合金)下导电层、铝(合金)中间导电层和钼(合金)上导电层。然而,本发明不限于此,金属层175q可包括不同的金属或导体。
虽然未示出,但是欧姆接触可以设置在半导体层175p和金属层175q之间。例如,欧姆接触包括硅化物或以高浓度掺杂有n型杂质的n+氢化非晶硅。
半导体层175p和金属层175q可以通过利用相同的掩模而被同时图案化。下面的下半导体层175p的宽度大于金属层175q的宽度。因此,半导体层175p的上表面在金属层175q的两个边缘处被部分地暴露。
第二绝缘层180可包括无机绝缘材料,诸如硅氧化物(SiOx)和/或硅氮化物(SiNx)。第二绝缘层180设置在信号输入线175上。第二绝缘层180设置在包括信号输入线175的基板110上。
第一绝缘层140和第二绝缘层180具有暴露出信号线125的至少一部分的第一接触孔237。此外,第二绝缘层180具有暴露出信号输入线175的至少一部分的第二接触孔239。
第一接触孔237和第二接触孔239可包括多个接触孔。例如,如图2所示,五个第一接触孔237设置在第一信号线125a的相应第一连接区域上。五个第二接触孔239设置在第一信号输入线175a的相应第二连接区域上。
在示范性实施方式中,第一接触孔237和第二接触孔239沿着第一方向交替地布置成Z字形状。备选地,第一接触孔237和第二接触孔239可以沿着第一方向布置成直线。
在示范性实施方式中,通过第一接触孔237暴露的一部分信号线125不需要交叠通过第二接触孔239暴露的一部分信号输入线175。
用于通过第一接触孔237和第二接触孔239连接信号线125和信号输入线175的连接构件195设置在第二绝缘层180上。连接构件195可以设置在外围区中并且可包括在显示区中形成像素电极的导电材料。例如,连接构件195可包括诸如ITO(铟锡氧化物)或IZO(铟锌氧化物)的透明导电材料,或者诸如铝、银、铬或其合金的反射金属。
连接构件195连接到信号线125和信号输入线175,施加到信号线125的时钟信号通过信号输入线175被传输到栅极驱动器400。
图4为图2所示的区域“A”的放大视图。
参考图4,箭头表示电流流动的方向。连接结构增大信号线125和信号输入线175之间的接触面积并因此减小接触电阻。
在根据本发明的示范性实施方式的显示器中,栅极驱动器400和信号线125的连接结构集成在基板110上,然而本发明不限于此。数据驱动器可以集成在基板上,数据驱动器及其他信号线的连接结构可具有相同或相似的连接结构。
此外,根据本发明的示范性实施方式的连接结构可连接设置在显示区中的层和其他布线。
虽然已经参考本发明构思的示范性实施方式显示和描述了本发明构思,然而对于本领域的普通技术人员而言明显的是,在不脱离由权利要求所限定的本发明构思的精神和范围的情况下,可以对其进行形式和细节上的不同变化。
Claims (12)
1.一种显示器,包括:
基板;
信号线,设置在所述基板上;
信号输入线,设置在所述基板上并连接到驱动器;
第一绝缘层,设置在所述信号线上;
第二绝缘层,设置在所述信号输入线和所述第一绝缘层上;
多个第一接触孔,穿透所述第一绝缘层和所述第二绝缘层并暴露出所述信号线的一部分;
多个第二接触孔,穿透所述第二绝缘层并暴露出所述信号输入线的一部分;以及
连接构件,通过所述多个第一接触孔和所述多个第二接触孔连接所述信号线和所述信号输入线,并设置在所述第二绝缘层上,
其中所述多个第一接触孔和所述多个第二接触孔交替地布置在所述第二绝缘层中。
2.如权利要求1所述的显示器,其中所述多个第一接触孔和所述多个第二接触孔沿着所述信号线延伸的方向交替地布置。
3.如权利要求2所述的显示器,其中通过所述第一接触孔暴露的一部分所述信号线和通过所述第二接触孔暴露的一部分所述信号输入线没有彼此交叠。
4.如权利要求1所述的显示器,其中所述信号输入线包括半导体层和设置在该半导体层上的金属层。
5.如权利要求4所述的显示器,其中所述信号输入线设置在所述第一绝缘层上。
6.如权利要求5所述的显示器,其中所述第一绝缘层和所述第二绝缘层包括无机绝缘材料,该无机绝缘材料包括硅氧化物(SiOx)或硅氮化物(SiNx)。
7.如权利要求1所述的显示器,其中所述信号线传输时钟信号。
8.如权利要求7所述的显示器,其中所述驱动器集成在所述基板上。
9.如权利要求8所述的显示器,其中所述驱动器包括传输栅极信号的栅极驱动器。
10.如权利要求1所述的显示器,其中所述连接构件包括铟锡氧化物(ITO)或铟锌氧化物(IZO)。
11.如权利要求1所述的显示器,其中所述基板包括显示区和邻近于该显示区的外围区,所述信号线、所述驱动器和所述信号输入线设置在所述外围区中。
12.如权利要求1所述的显示器,其中所述信号输入线的端部具有锯齿形状。
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