CN103972219B - 灯单元 - Google Patents

灯单元 Download PDF

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Publication number
CN103972219B
CN103972219B CN201310406770.1A CN201310406770A CN103972219B CN 103972219 B CN103972219 B CN 103972219B CN 201310406770 A CN201310406770 A CN 201310406770A CN 103972219 B CN103972219 B CN 103972219B
Authority
CN
China
Prior art keywords
light emitting
layer
emitting device
lamp unit
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310406770.1A
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English (en)
Chinese (zh)
Other versions
CN103972219A (zh
Inventor
赵允旻
朴仁用
李建教
李宗祐
李周映
张成燻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103972219A publication Critical patent/CN103972219A/zh
Application granted granted Critical
Publication of CN103972219B publication Critical patent/CN103972219B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
CN201310406770.1A 2013-01-29 2013-09-09 灯单元 Active CN103972219B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020130009672A KR20140096722A (ko) 2013-01-29 2013-01-29 램프 유닛
KR10-2013-0009672 2013-01-29

Publications (2)

Publication Number Publication Date
CN103972219A CN103972219A (zh) 2014-08-06
CN103972219B true CN103972219B (zh) 2018-05-15

Family

ID=48877163

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310406770.1A Active CN103972219B (zh) 2013-01-29 2013-09-09 灯单元

Country Status (5)

Country Link
US (1) US9190578B2 (enExample)
EP (1) EP2760046B1 (enExample)
JP (1) JP6228781B2 (enExample)
KR (1) KR20140096722A (enExample)
CN (1) CN103972219B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016032167A1 (ko) * 2014-08-26 2016-03-03 엘지이노텍(주) 발광 소자 패키지
JP6442981B2 (ja) * 2014-10-28 2018-12-26 株式会社村田製作所 コイル部品
KR102344533B1 (ko) * 2015-02-12 2021-12-29 엘지이노텍 주식회사 발광소자 패키지
BR112017020598A2 (pt) * 2015-03-31 2018-07-03 Dow Global Technologies Llc compostos de enchimento para cabos de telecomunicações
KR102608419B1 (ko) * 2016-07-12 2023-12-01 삼성디스플레이 주식회사 표시장치 및 표시장치의 제조방법
CN107946441A (zh) * 2016-10-12 2018-04-20 亿光电子工业股份有限公司 发光装置及发光二极管封装结构
KR102730359B1 (ko) * 2017-01-25 2024-11-18 엘지이노텍 주식회사 광원 모듈 및 이를 구비한 조명 장치
US20190295914A1 (en) * 2018-03-23 2019-09-26 Advanced Semiconductor Engineering, Inc. Semiconductor device package and a method of manufacturing the same
JP7273297B2 (ja) * 2019-06-28 2023-05-15 日亜化学工業株式会社 発光モジュール及び発光モジュールの製造方法
FR3105346B1 (fr) * 2019-12-19 2022-10-07 Valeo Vision Ensemble lumineux pour dispositif d’eclairage et/ou de signalisation pour vehicule automobile
US12364065B2 (en) * 2021-09-14 2025-07-15 Lg Electronics Inc. Display apparatus using semiconductor light-emitting device, and manufacturing method therefor
US20250275344A1 (en) * 2022-04-25 2025-08-28 Excellence Optoelectronics Inc. Strip-shaped light-emitting diode and application device thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1532938A (zh) * 2003-02-28 2004-09-29 ������������ʽ���� 半导体装置及其制造方法
CN100479212C (zh) * 2005-04-01 2009-04-15 松下电器产业株式会社 Led部件及其制造方法
CN102270629A (zh) * 2010-06-01 2011-12-07 Lg伊诺特有限公司 发光器件封装及照明系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004021233A1 (de) * 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
GB0504379D0 (en) * 2005-03-03 2005-04-06 Melexis Nv Low profile overmoulded semiconductor package with transparent lid
JP2006269986A (ja) * 2005-03-25 2006-10-05 Matsushita Electric Ind Co Ltd 発光装置
US7777412B2 (en) * 2007-03-22 2010-08-17 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Phosphor converted LED with improved uniformity and having lower phosphor requirements
JP2009076749A (ja) * 2007-09-21 2009-04-09 Toyoda Gosei Co Ltd Ｌｅｄ装置及びその製造方法
JP4808244B2 (ja) * 2008-12-09 2011-11-02 スタンレー電気株式会社 半導体発光装置およびその製造方法
JP5506313B2 (ja) * 2009-09-30 2014-05-28 スタンレー電気株式会社 車両ヘッドライト用発光ダイオード光源
KR101047721B1 (ko) * 2010-03-09 2011-07-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5701523B2 (ja) * 2010-06-22 2015-04-15 日東電工株式会社 半導体発光装置
DE102010024864B4 (de) * 2010-06-24 2021-01-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
EP2447595B1 (en) * 2010-10-27 2017-08-02 LG Innotek Co., Ltd. Light emitting module
CN103456728B (zh) * 2012-05-29 2016-09-21 璨圆光电股份有限公司 发光组件及其发光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1532938A (zh) * 2003-02-28 2004-09-29 ������������ʽ���� 半导体装置及其制造方法
CN100479212C (zh) * 2005-04-01 2009-04-15 松下电器产业株式会社 Led部件及其制造方法
CN102270629A (zh) * 2010-06-01 2011-12-07 Lg伊诺特有限公司 发光器件封装及照明系统

Also Published As

Publication number Publication date
JP2014146783A (ja) 2014-08-14
EP2760046B1 (en) 2019-06-12
EP2760046A3 (en) 2016-01-13
CN103972219A (zh) 2014-08-06
KR20140096722A (ko) 2014-08-06
US9190578B2 (en) 2015-11-17
JP6228781B2 (ja) 2017-11-08
US20140209947A1 (en) 2014-07-31
EP2760046A2 (en) 2014-07-30

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Legal Events

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20210819

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address