CN103956396A - Stannous sulfide laminated thin-film solar cell and manufacturing method thereof - Google Patents
Stannous sulfide laminated thin-film solar cell and manufacturing method thereof Download PDFInfo
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- CN103956396A CN103956396A CN201410211155.XA CN201410211155A CN103956396A CN 103956396 A CN103956396 A CN 103956396A CN 201410211155 A CN201410211155 A CN 201410211155A CN 103956396 A CN103956396 A CN 103956396A
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- DZXKSFDSPBRJPS-UHFFFAOYSA-N tin(2+);sulfide Chemical compound [S-2].[Sn+2] DZXKSFDSPBRJPS-UHFFFAOYSA-N 0.000 title claims abstract description 104
- 239000010409 thin film Substances 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 135
- 239000011787 zinc oxide Substances 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 35
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 claims description 90
- 229960001296 zinc oxide Drugs 0.000 claims description 79
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 66
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 33
- 239000004411 aluminium Substances 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 22
- 238000002360 preparation method Methods 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 238000004062 sedimentation Methods 0.000 claims description 20
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 229910005543 GaSe Inorganic materials 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 3
- 230000001473 noxious effect Effects 0.000 abstract 1
- 238000003475 lamination Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000011712 cell development Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000007096 poisonous effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000272173 Calidris Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical Kinetics & Catalysis (AREA)
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to the solar cell technology and provides a stannous sulfide laminated thin-film solar cell and a manufacturing method of the stannous sulfide laminated thin-film solar cell. The stannous sulfide laminated thin-film solar cell and the manufacturing method of the stannous sulfide laminated solar cell solve the problem that due to the fact that an existing multi-compound laminated thin-film solar cell is made of the materials, such as CuIn, GaSe and GaAs, which are high in price and noxious, the existing multi-compound laminated solar cell is high in cost and not environmentally friendly. According to the technical scheme of the stannous sulfide laminated thin-film solar cell, a top N type zinc oxide thin film is arranged on a substrate, a top P type stannous sulfide thin film is arranged on the top N type zinc oxide thin film, a bottom N type zinc oxide thin film is arranged on the top P type stannous sulfide thin film, a bottom P type stannous sulfide thin film is arranged on the bottom N type zinc oxide thin film, and an aluminum electrode is arranged on the bottom P type stannous sulfide thin film. The stannous sulfide laminated thin-film solar cell and the manufacturing method of the stannous sulfide laminated thin-film solar cell have the advantages that cost is effectively reduced, the technology is simple, the photoelectric conversion efficiency can be improved, and the method is suitable for solar cells.
Description
Technical field
The present invention relates to solar battery technology, particularly the preparation method of stannous sulfide (SnS) overlapping thin film solar battery.
Background technology
The energy is the important substance basis of mankind's Existence and development, and along with social development, the non-renewable resources such as coal and oil are fewer and feweri, and exploitation renewable and clean energy resource is extremely urgent.Solar energy is inexhaustible new forms of energy, and solar cell is a kind of important way that people utilize solar energy, and unlimited, clean resource clean solar radiation is converted to electric energy by solar cell.
Solar cell development experience three phases.1) " first generation " solar cell taking silicon chip as basis, its technical development is ripe, but monocrystalline silicon purity requirement is 99.999%, and the stint no sacrifice battery conversion efficiency of the too high people of making of production cost is cost exploitation thin-film solar cells, 2) second generation solar cell is the solar cell of based thin film material, thin film technique material requested is compared with crystal silicon solar energy battery much less, and be easy to realize the production of area battery, can effectively reduce costs, thin-film solar cells mainly contains amorphous silicon film battery, polycrystalline silicon thin film solar cell, Cadimium telluride thin film battery and copper, indium and selenium film battery, wherein the hull cell best performance taking polysilicon as material, 3) lamination solar cell, multi-band gap solar cell and hot carrier solar cell etc., wherein, lamination solar cell is an important directions of solar cell development, because sunlight spectrum can be divided into continuous some parts, there is the material preferably mating to make battery by bandwidth and these parts, and be outside in superimposed together by energy gap order from big to small, allow the shortest light of wavelength be utilized by the wide gap material battery of ragged edge, the light that wavelength is grown can transmission enters to be allowed compared with the utilization of low energy gap width material cell, this just likely becomes luminous energy into electric energy to greatest extent.
Multi-element compounds lamination solar cell at present adopts the expensive and poisonous raw materials such as CuIn, GaSe and GaAs because of main, thereby limits its popularization and application, and therefore finding abundant and nontoxic raw material is the developing direction of studying.
Summary of the invention
The object of the invention is to overcome current multi-element compounds lamination solar cell because expensive and poisonous raw materials such as adopting CuIn, GaSe and GaAs causes the shortcoming of the higher and not environmental protection of cost, a kind of stannous sulfide overlapping thin film solar battery and preparation method thereof is provided.
The present invention solves its technical problem, the technical scheme adopting is, stannous sulfide overlapping thin film solar battery, comprise substrate, it is characterized in that, also comprise top layer N-type zinc oxide (ZnO) film, bottom N-type zinc-oxide film, top layer P type stannous sulfide (SnS) film, bottom P type stannous sulfide thin film and aluminium electrode, top layer N-type zinc-oxide film is arranged on substrate top, top layer P type stannous sulfide thin film is arranged on top layer N-type zinc-oxide film top, bottom N-type zinc-oxide film is arranged on top layer P type stannous sulfide thin film top, bottom P type stannous sulfide thin film is arranged on bottom N-type zinc-oxide film top, aluminium electrode is arranged on bottom P type stannous sulfide thin film top.
Concrete, described substrate is fluorine-doped tin dioxide transparent conducting glass (FTO substrate) or ito glass, described fluorine-doped tin dioxide transparent conducting glass comprises fluorine-doped tin dioxide (SnO
2: F) film and glassy layer, described fluorine-doped tin dioxide film is arranged on glassy layer, and top layer N-type zinc-oxide film is arranged on fluorine-doped tin dioxide film top; Described ito glass comprises indium tin oxide films and glassy layer, and described indium tin oxide films is arranged on glassy layer, and top layer N-type zinc-oxide film is arranged on indium tin oxide films top.
The preparation method of stannous sulfide overlapping thin film solar battery, is characterized in that, comprises the following steps:
Step 1, cleaning substrate;
Step 2, on substrate, prepare top layer stannous sulfide-zinc oxide PN junction;
Step 3, on top layer stannous sulfide-zinc oxide PN junction, prepare bottom stannous sulfide-zinc oxide PN junction;
Step 4, on bottom stannous sulfide-zinc oxide PN junction, prepare aluminium electrode.
Concrete, in step 1, described substrate is fluorine-doped tin dioxide transparent conducting glass or ito glass, and described fluorine-doped tin dioxide transparent conducting glass comprises fluorine-doped tin dioxide film and glassy layer, and described fluorine-doped tin dioxide film is arranged on glassy layer;
Described ito glass comprises indium tin oxide films and glassy layer, and described indium tin oxide films is arranged on glassy layer.
Further, in step 2, the described method of preparing top layer stannous sulfide-zinc oxide PN junction on substrate is:
Step 21, on the fluorine-doped tin dioxide film of substrate or indium tin oxide films, adopt magnetron sputtering method to prepare top layer N-type zinc-oxide film;
Step 22, on top layer N-type zinc-oxide film, adopt magnetron sputtering method to prepare top layer P type stannous sulfide thin film.
Concrete, in step 21, the sputtering power of described magnetron sputtering method is 80W or 120W or 160W or 200W, and its sedimentation time is 20 minutes or 30 minutes or 40 minutes or 50 minutes, its operating air pressure is 2.0Pa or 2.5Pa or 3.0Pa or 3.5Pa, and working temperature is room temperature;
In step 22, the sputtering power of described magnetron sputtering method is 22W or 24W or 26W or 28W, its sedimentation time is 10 minutes or 12 minutes or 14 minutes or 16 minutes, its operating air pressure is 2.2Pa or 2.5Pa or 2.7Pa or 3.0Pa, working temperature is room temperature, and the thickness of top layer P type stannous sulfide thin film is 210nm～345nm.
Further, in step 3, the described method of preparing bottom stannous sulfide-zinc oxide PN junction on top layer stannous sulfide-zinc oxide PN junction is:
Step 31, on top layer P type stannous sulfide thin film, adopt magnetron sputtering method to prepare bottom N-type zinc-oxide film;
Step 32, on bottom N-type zinc-oxide film, adopt magnetron sputtering method to prepare bottom P type stannous sulfide thin film.
Concrete, in step 31, the sputtering power of described magnetron sputtering method is 60W or 100W or 140W or 180W, and its sedimentation time is 25 minutes or 35 minutes or 45 minutes or 55 minutes, its operating air pressure is 2.0Pa or 2.5Pa or 3.0Pa or 3.5Pa, and working temperature is room temperature;
In step 32, the sputtering power of described magnetron sputtering method is 26W or 28W or 30W or 32W, its sedimentation time is 13 minutes or 15 minutes or 17 minutes or 19 minutes, its operating air pressure is 2.2Pa or 2.5Pa or 2.7Pa or 3.0Pa, working temperature is room temperature, and the thickness of bottom P type stannous sulfide thin film is 255nm～395nm.
Further, in step 4, the described method of preparing aluminium electrode on bottom stannous sulfide-zinc oxide PN junction is:
Step 41, on bottom P type stannous sulfide thin film, adopt magnetron sputtering method to prepare aluminium electrode.
Concrete, in rapid 41, the sputtering power of described magnetron sputtering method is 20W or 40W or 60W or 80W, and its sedimentation time is 10 minutes or 15 minutes or 20 minutes or 25 minutes, and its operating air pressure is 1.1Pa or 1.3Pa or 1.5Pa or 1.7Pa, and working temperature is room temperature.
The invention has the beneficial effects as follows, by the preparation method of above-mentioned stannous sulfide overlapping thin film solar battery and the stannous sulfide overlapping thin film solar battery of preparing thereof, can find out, the raw material such as zinc oxide, stannous sulfide and the aluminium that this overlapping thin film solar battery adopts have environmental protection, abundant and cheap feature, effectively reduce cost; And adopt magnetron sputtering method to prepare the top layer stannous sulfide P type absorbed layer of wide with gap and the bottom stannous sulfide P type absorbed layer of narrow band gap, top layer stannous sulfide-zinc oxide PN junction and bottom stannous sulfide-zinc oxide PN junction are superposeed and prepare the stannous sulfide thin film solar cell of two PN junction laminations, thereby in the technical raising by a larger margin of single PN kink stannous sulfide thin film battery the absorption to sunlight, and the stannous sulfide absorbed layer absorption coefficient of light that uses magnetron sputtering method to prepare can reach 10
5cm
-1, the absorption coefficient of light of the stannous sulfide absorbed layer of preparing than additive method approximately exceeds an order of magnitude, therefore this lamination stannous sulfide solar cell can become electric energy by luminous energy to a greater extent, and has improved laminated cell photoelectric conversion efficiency; The preparation of monoblock battery all adopts simple vacuum magnetic-control sputtering method to complete in same equipment, battery preparation technique is simple, manufacturing cost is low, and vacuum coating environment can be avoided the introducing of impurity in stannous sulfide, zinc oxide and aluminium electrode, thereby improve the stability of this overlapping thin film solar battery.
Brief description of the drawings
Fig. 1 is the structural representation of stannous sulfide overlapping thin film solar battery in the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, describe technical scheme of the present invention in detail.
Stannous sulfide overlapping thin film solar battery of the present invention is by substrate, top layer N-type zinc oxide (ZnO) film, bottom N-type zinc-oxide film, top layer P type stannous sulfide (SnS) film, bottom P type stannous sulfide thin film and aluminium electrode composition, wherein, top layer N-type zinc-oxide film is arranged on substrate top, top layer P type stannous sulfide thin film is arranged on top layer N-type zinc-oxide film top, bottom N-type zinc-oxide film is arranged on top layer P type stannous sulfide thin film top, bottom P type stannous sulfide thin film is arranged on bottom N-type zinc-oxide film top, aluminium electrode is arranged on bottom P type stannous sulfide thin film top.The preparation method of stannous sulfide overlapping thin film solar battery of the present invention is: first clean substrate, then on substrate, prepare top layer stannous sulfide-zinc oxide PN junction, on top layer stannous sulfide-zinc oxide PN junction, prepare again bottom stannous sulfide-zinc oxide PN junction, finally on bottom stannous sulfide-zinc oxide PN junction, prepare aluminium electrode.
Embodiment
In the embodiment of the present invention, the structural representation of stannous sulfide overlapping thin film solar battery as shown in Figure 1.
Visible, this routine stannous sulfide overlapping thin film solar battery is by substrate, top layer N-type zinc oxide (ZnO) film, bottom N-type zinc-oxide film, top layer P type stannous sulfide (SnS) film, bottom P type stannous sulfide thin film and aluminium electrode composition, wherein, top layer N-type zinc-oxide film is arranged on substrate top, top layer P type stannous sulfide thin film is arranged on top layer N-type zinc-oxide film top, bottom N-type zinc-oxide film is arranged on top layer P type stannous sulfide thin film top, bottom P type stannous sulfide thin film is arranged on bottom N-type zinc-oxide film top, aluminium electrode is arranged on bottom P type stannous sulfide thin film top, substrate can be FTO substrate, it is fluorine-doped tin dioxide transparent conducting glass, and fluorine-doped tin dioxide transparent conducting glass comprises fluorine-doped tin dioxide film and glassy layer, this fluorine-doped tin dioxide film is arranged on glassy layer, one side has fluorine-doped tin dioxide film, another side does not have, top layer N-type zinc-oxide film is arranged on fluorine-doped tin dioxide film top, stannous sulfide overlapping thin film solar battery after completing, the sunlight never side of fluorine-doped tin dioxide film is transmitted in this stannous sulfide overlapping thin film solar battery, substrate can be also ito glass, ito glass comprises indium tin oxide films and glassy layer, this indium tin oxide films is arranged on glassy layer, one side has indium tin oxide films, another side does not have, top layer N-type zinc-oxide film is arranged on indium tin oxide films top, the stannous sulfide overlapping thin film solar battery after completing, and the sunlight never side of indium tin oxide films is transmitted in this stannous sulfide overlapping thin film solar battery.
Its preparation method is specially:
Step 1, cleaning substrate.
In this step, substrate can be FTO substrate, i.e. fluorine-doped tin dioxide transparent conducting glass, fluorine-doped tin dioxide transparent conducting glass comprises fluorine-doped tin dioxide film and glassy layer, fluorine-doped tin dioxide film is arranged on glassy layer, and one side has fluorine-doped tin dioxide film, and another side does not have.
Step 2, on substrate, prepare top layer stannous sulfide-zinc oxide PN junction.
In this step, the method of preparing top layer stannous sulfide-zinc oxide PN junction on substrate can be specially: first on the fluorine-doped tin dioxide film of substrate, adopt magnetron sputtering method to prepare top layer N-type zinc-oxide film, its sputtering power is 80W or 120W or 160W or 200W, its sedimentation time is 20 minutes or 30 minutes or 40 minutes or 50 minutes, its operating air pressure is 2.0Pa or 2.5Pa or 3.0Pa or 3.5Pa, working temperature is room temperature, on top layer N-type zinc-oxide film, adopt again magnetron sputtering method to prepare top layer P type stannous sulfide thin film, its sputtering power is 22W or 24W or 26W or 28W, its sedimentation time is 10 minutes or 12 minutes or 14 minutes or 16 minutes, its operating air pressure is 2.2Pa or 2.5Pa or 2.7Pa or 3.0Pa, working temperature is room temperature, the thickness suggestion of top layer P type stannous sulfide thin film is 210nm～345nm.
Step 3, on top layer stannous sulfide-zinc oxide PN junction, prepare bottom stannous sulfide-zinc oxide PN junction.
In this step, the method of preparing bottom stannous sulfide-zinc oxide PN junction on top layer stannous sulfide-zinc oxide PN junction can be specially: first on top layer P type stannous sulfide thin film, adopt magnetron sputtering method to prepare bottom N-type zinc-oxide film, its sputtering power is 60W or 100W or 140W or 180W, its sedimentation time is 25 minutes or 35 minutes or 45 minutes or 55 minutes, its operating air pressure is 2.0Pa or 2.5Pa or 3.0Pa or 3.5Pa, working temperature is room temperature, on bottom N-type zinc-oxide film, adopt again magnetron sputtering method to prepare bottom P type stannous sulfide thin film, its sputtering power is 26W or 28W or 30W or 32W, its sedimentation time is 13 minutes or 15 minutes or 17 minutes or 19 minutes, its operating air pressure is 2.2Pa or 2.5Pa or 2.7Pa or 3.0Pa, working temperature is room temperature, the thickness suggestion of bottom P type stannous sulfide thin film is 255nm～395nm.
Step 4, on bottom stannous sulfide-zinc oxide PN junction, prepare aluminium electrode.
In this step, the method of preparing aluminium electrode on bottom stannous sulfide-zinc oxide PN junction can be specially: on bottom P type stannous sulfide thin film, adopt magnetron sputtering method to prepare aluminium electrode, sputtering power is now 20W or 40W or 60W or 80W, its sedimentation time is 10 minutes or 15 minutes or 20 minutes or 25 minutes, its operating air pressure is 1.1Pa or 1.3Pa or 1.5Pa or 1.7Pa, and working temperature is room temperature.
Be exemplified below:
1, FTO substrate is cleaned;
2, the preparation of top layer stannous sulfide-zinc oxide PN junction:
(1) utilize JGP-450 type magnetron sputtering plating instrument on substrate, to prepare top layer N-type zinc-oxide film, sputtering power is 160W, sedimentation time 25 minutes, and operating air pressure 2.0Pa, working temperature is room temperature.
(2) utilize JGP-450 type magnetron sputtering plating instrument on top layer N-type zinc-oxide film, to prepare top layer P type stannous sulfide thin film, wherein sputtering power is 24W, sedimentation time is elected 12min successively as, and operating air pressure is set as 2.7Pa successively, and temperature is controlled at room temperature;
3, the preparation of bottom stannous sulfide-zinc oxide PN junction:
(1) utilize JGP-450 type magnetron sputtering plating instrument to prepare bottom N-type zinc-oxide film on top layer P type stannous sulfide thin film, sputtering power is 140W, sedimentation time 35min, and operating air pressure 3.0Pa, temperature is controlled at room temperature.
(2) utilize JGP-450 type magnetron sputtering plating instrument on bottom N-type zinc-oxide film, to prepare bottom P type stannous sulfide thin film, wherein sputtering power is 28W, sedimentation time is elected 15min successively as, and operating air pressure is set as 2.5Pa successively, and temperature is controlled at room temperature;
4, the preparation of aluminium electrode:
Utilize JGP-450 type magnetron sputtering plating instrument to prepare electrode aluminium film on bottom P type stannous sulfide thin film, sputtering power is 80W, sedimentation time 20min, and operating air pressure 1.3Pa, temperature is controlled at room temperature.
In top layer stannous sulfide-zinc oxide PN junction of this example preparation, the thickness of stannous sulfide absorbed layer is 247nm (being top layer P type stannous sulfide thin film), its with gap is about 1.57eV, the thickness of stannous sulfide absorbed layer in bottom stannous sulfide-zinc oxide PN junction (being bottom P type stannous sulfide thin film) is 325nm, its with gap is about 1.39eV, raising by a larger margin the absorption region of sunlight, the optoelectronic transformation efficiency of this solar cell is increased, in the present invention, use the stannous sulfide absorbed layer absorption coefficient of light that magnetron sputtering method is prepared can reach 10
5cm
-1, the absorption coefficient of light of the stannous sulfide absorbed layer of preparing than additive method approximately exceeds an order of magnitude, therefore this lamination stannous sulfide solar cell can become electric energy by luminous energy to a greater extent, and has improved laminated cell photoelectric conversion efficiency.
Claims (10)
1. stannous sulfide overlapping thin film solar battery, comprise substrate, it is characterized in that, also comprise top layer N-type zinc-oxide film, bottom N-type zinc-oxide film, top layer P type stannous sulfide thin film, bottom P type stannous sulfide thin film and aluminium electrode, top layer N-type zinc-oxide film is arranged on substrate top, top layer P type stannous sulfide thin film is arranged on top layer N-type zinc-oxide film top, bottom N-type zinc-oxide film is arranged on top layer P type stannous sulfide thin film top, bottom P type stannous sulfide thin film is arranged on bottom N-type zinc-oxide film top, aluminium electrode is arranged on bottom P type stannous sulfide thin film top.
2. stannous sulfide overlapping thin film solar battery according to claim 1, is characterized in that, described substrate is fluorine-doped tin dioxide transparent conducting glass or ito glass,
Described fluorine-doped tin dioxide transparent conducting glass comprises fluorine-doped tin dioxide film and glassy layer, and described fluorine-doped tin dioxide film is arranged on glassy layer, and top layer N-type zinc-oxide film is arranged on fluorine-doped tin dioxide film top;
Described ito glass comprises indium tin oxide films and glassy layer, and described indium tin oxide films is arranged on glassy layer, and top layer N-type zinc-oxide film is arranged on indium tin oxide films top.
3. the preparation method of stannous sulfide overlapping thin film solar battery, is characterized in that, comprises the following steps:
Step 1, cleaning substrate;
Step 2, on substrate, prepare top layer stannous sulfide-zinc oxide PN junction;
Step 3, on top layer stannous sulfide-zinc oxide PN junction, prepare bottom stannous sulfide-zinc oxide PN junction;
Step 4, on bottom stannous sulfide-zinc oxide PN junction, prepare aluminium electrode.
4. the preparation method of stannous sulfide overlapping thin film solar battery according to claim 3, is characterized in that, in step 1, described substrate is fluorine-doped tin dioxide transparent conducting glass or ito glass,
Described fluorine-doped tin dioxide transparent conducting glass comprises fluorine-doped tin dioxide film and glassy layer, and described fluorine-doped tin dioxide film is arranged on glassy layer;
Described ito glass comprises indium tin oxide films and glassy layer, and described indium tin oxide films is arranged on glassy layer.
5. the preparation method of stannous sulfide overlapping thin film solar battery according to claim 4, is characterized in that, in step 2, the described method of preparing top layer stannous sulfide-zinc oxide PN junction on substrate is:
Step 21, on the fluorine-doped tin dioxide film of substrate or indium tin oxide films, adopt magnetron sputtering method to prepare top layer N-type zinc-oxide film;
Step 22, on top layer N-type zinc-oxide film, adopt magnetron sputtering method to prepare top layer P type stannous sulfide thin film.
6. the preparation method of stannous sulfide overlapping thin film solar battery according to claim 5, it is characterized in that, in step 21, the sputtering power of described magnetron sputtering method is 80W or 120W or 160W or 200W, its sedimentation time is 20 minutes or 30 minutes or 40 minutes or 50 minutes, its operating air pressure is 2.0Pa or 2.5Pa or 3.0Pa or 3.5Pa, and working temperature is room temperature;
In step 22, the sputtering power of described magnetron sputtering method is 22W or 24W or 26W or 28W, its sedimentation time is 10 minutes or 12 minutes or 14 minutes or 16 minutes, its operating air pressure is 2.2Pa or 2.5Pa or 2.7Pa or 3.0Pa, working temperature is room temperature, and the thickness of top layer P type stannous sulfide thin film is 210nm～345nm.
7. the preparation method of stannous sulfide overlapping thin film solar battery according to claim 5, is characterized in that, in step 3, the described method of preparing bottom stannous sulfide-zinc oxide PN junction on top layer stannous sulfide-zinc oxide PN junction is:
Step 31, on top layer P type stannous sulfide thin film, adopt magnetron sputtering method to prepare bottom N-type zinc-oxide film;
Step 32, on bottom N-type zinc-oxide film, adopt magnetron sputtering method to prepare bottom P type stannous sulfide thin film.
8. the preparation method of stannous sulfide overlapping thin film solar battery according to claim 7, it is characterized in that, in step 31, the sputtering power of described magnetron sputtering method is 60W or 100W or 140W or 180W, its sedimentation time is 25 minutes or 35 minutes or 45 minutes or 55 minutes, its operating air pressure is 2.0Pa or 2.5Pa or 3.0Pa or 3.5Pa, and working temperature is room temperature;
In step 32, the sputtering power of described magnetron sputtering method is 26W or 28W or 30W or 32W, its sedimentation time is 13 minutes or 15 minutes or 17 minutes or 19 minutes, its operating air pressure is 2.2Pa or 2.5Pa or 2.7Pa or 3.0Pa, working temperature is room temperature, and the thickness of bottom P type stannous sulfide thin film is 255nm～395nm.
9. the preparation method of stannous sulfide overlapping thin film solar battery according to claim 7, is characterized in that, in step 4, the described method of preparing aluminium electrode on bottom stannous sulfide-zinc oxide PN junction is:
Step 41, on bottom P type stannous sulfide thin film, adopt magnetron sputtering method to prepare aluminium electrode.
10. the preparation method of stannous sulfide overlapping thin film solar battery according to claim 9, it is characterized in that, in step 41, the sputtering power of described magnetron sputtering method is 20W or 40W or 60W or 80W, its sedimentation time is 10 minutes or 15 minutes or 20 minutes or 25 minutes, its operating air pressure is 1.1Pa or 1.3Pa or 1.5Pa or 1.7Pa, and working temperature is room temperature.
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| CN110665508A (en) * | 2019-10-08 | 2020-01-10 | 攀枝花学院 | Cobalt-doped high-titanium blast furnace slag photocatalytic material and application thereof |
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| CN101894877A (en) * | 2009-05-22 | 2010-11-24 | 伍丽 | Method for preparing stannous sulfide thin film solar cell |
| CN102655187A (en) * | 2012-04-26 | 2012-09-05 | 华中科技大学 | Method for preparing tin-sulfur compound laminated solar battery |
| CN102751340A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Stannous sulfide solar battery and preparation method thereof |
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| CN101894877A (en) * | 2009-05-22 | 2010-11-24 | 伍丽 | Method for preparing stannous sulfide thin film solar cell |
| CN102655187A (en) * | 2012-04-26 | 2012-09-05 | 华中科技大学 | Method for preparing tin-sulfur compound laminated solar battery |
| CN102751340A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Stannous sulfide solar battery and preparation method thereof |
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