CN101894877A - Method for preparing stannous sulfide thin film solar cell - Google Patents
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Abstract
The invention relates to a method for preparing a stannous sulfide thin film solar cell, which belongs to the technical field of solar energy manufacturing processes. The method of the invention is characterized in that: a ZnO substrate is prepared by a magnetron sputtering method, and an SnS thin film and an Al electrode are deposited by a vacuum evaporation method. The method specifically comprises the following steps of: preparing a ZnO thin film serving as an N-type window layer material; preparing the SnS thin film serving as a P-type absorption layer material; and preparing the Al electrode to finally prepare the ITO/ZnO/SnS/Al solar cell having a reverse structure. A solar device of the invention is suitable for a photoelectric solar photovoltaic cell.
Description
Technical field:
The present invention relates to a kind of preparation method of stannous sulfide thin film solar cell, belong to the solar energy manufacturing process technology field.
Background technology:
SnS is subject to the people's attention in recent years gradually as a kind of novel photoelectric transition material with nontoxic, environmental protection of potential application foreground.If can prepare the higher SnS solar cell of conversion efficiency, utilization and the environmental protection aspect to the energy plays a part positive undoubtedly.SnS removes and can be used for solar cell, because it utilizes the photo-thermal transition effects to can be used as the absorbed layer of solar water heater again to the absorption coefficient height of light.SnS also can be used as SnS-Cu
xThe presoma of S composite material has become present one of the thin-film material of potentiality to be exploited that has most.In recent years, the researcher of countries in the world had utilized various diverse ways to prepare SnS film and device thereof.
Yet adopting the conduction type of the present SnS film that the preparation method obtained generally is the p type, also can't prepare better performances now than stable n-type SnS film, and this brings very big difficulty to the preparation of going up the solar cell of homojunction based on SnS and hinders.Therefore, in order more fully this material of SnS to be applied in the solar cell, it is most important that the material of seeking proper fit forms the heterojunction of excellent performance with it.And the ZnO material has the high and excellent advantages such as photoelectric characteristic of light transmission rate, and its raw material is easy to get, cheap, nontoxic, environment is not polluted, it is ep-type material, so ZnO is widely used as solar battery window layer, but all nobody is applied to such material in the SnS solar cell so far both at home and abroad, therefore, it is significant to form the development work of carrying out the SnS solar cell on the basis of heterojunction at preparation SnS film on the ZnO substrate.
In order to improve the efficient of this device, made solar battery structure has adopted the inverted structure that is similar among the OLED.Usually, the ITO/SnS/ZnO/Al battery preparation technique complexity of positive sequence structure, and if first evaporation SnS again sputter ZnO may cause the SnS film destruction and damage battery.Therefore, through to the improvement of positive sequence structure devices structure and adopted the inverted order structure of ITO/ZnO/SnS/Al after comparing.
Research prepares the research focus that the SnS hetero-junction thin-film battery with greater efficiency has become photovoltaic solar cells.
Summary of the invention:
The object of the present invention is to provide a kind of manufacturing process and method of SnS thin-film solar cells.
For achieving the above object, the present invention adopts following technical scheme:
A kind of preparation method of stannous sulfide solar cell is characterized in that depositing the SnS film by vacuum vapor deposition method on by the ZnO substrate of magnetron sputtering method preparation, and employing Al material is the solar cell that electrode has obtained luminous energy to be converted into electric energy.This method comprises following processing step:
The preparation of a.N type Window layer material ZnO film: adopt radio-frequency magnetron sputter method on the simple glass substrate, to prepare one deck intrinsic ZnO film, and on the ITO substrate, deposit ZnO film formation ZnO substrate with Window layer as solar cell with this parameter.Obtain in order to the optimal processing parameter of the ZnO film of preparation ZnO/SnS heterojunction be: sedimentation time is 40min, operating air pressure is 0.2Pa, power is 150W, the ZnO film quality for preparing under this condition is good, (FWHM) is less for halfwidth, and the surface is very smooth clean and tidy, relatively is applicable to the n layer ZnO film that is used for preparing in the ZnO/SnS heterojunction.
The preparation of b.P type absorbed layer material SnS film: adopt vacuum vapor deposition method on the ZnO substrate, prepare the SnS film, obtain in order to the technological parameter of the SnS film for preparing ZnO/SnS solar energy be: underlayer temperature is 400K, and vacuum degree is 4.0 * 10
-4Pa, the distance of substrate and evaporation source is 10cm, and the evaporation source temperature is 1000 ℃, and adopting the crystal oscillating circuit that designs voluntarily that the optimum thickness that has prepared the SnS film is monitored in film growth in real time is 150nm.
The preparation of c.Al electrode: adopt vacuum vapor deposition method to prepare the Al electrode, use the tungsten bar evaporation, aluminium wire is crooked and be hung on the tungsten bar that soda acid handled, on tungsten bar, increase voltage then.The affinity interaction that utilizes aluminium and tungsten can be affine naturally on tungsten bar after the aluminium wire dissolving when temperature raises, and should note keeping the deposition rate of Al electrode to remain on about 2～3nm/s when evaporation, can obtain the Al electrode that high-quality thickness is 100nm with this.
The preparation method of above-mentioned a kind of SnS solar cell, condition when it is characterized in that preparing ZnO substrate, vacuum vapor deposition method deposition SnS film and Al electrode by magnetron sputtering method is respectively: sedimentation time is 40min during sputter ZnO, operating air pressure is 0.2Pa, and power is 150W; Underlayer temperature is 400K during evaporation SnS, and vacuum degree is 4.0 * 10
-4Pa, the distance of substrate and evaporation source is 10cm, the evaporation source temperature is 1000 ℃; The speed of depositing Al electrode remains on about 2～3nm/s.
Compare with existing technology, the present invention has following remarkable advantage:
1. not only environmental protection and nature reserves are abundant for the required raw material of magnetron sputtering and vacuum evaporation technique.
2. ZnO for preparing and SnS film quality and stability are all very good.
3. adopted the inverted structure that is similar among the OLED to prepare this device.
4. the transformation efficiency based on the SnS heterojunction solar battery of this method preparation can significantly improve.
Description of drawings:
The structural representation of ZnO/SnS solar cell among Fig. 1 the present invention.
The I-V curve chart of ZnO/SnS solar cell among Fig. 2 the present invention.
Embodiment:
Now embodiments of the invention are described in the back:
Embodiment one: the concrete processing step of present embodiment is as follows:
The preparation of a.N type Window layer material ZnO film: utilize JC500-3/D type magnetic control sputtering device to prepare ZnO film earlier on the simple glass substrate, experiment parameter is: sputtering power is elected 50W respectively as, 100W, 150W and 200W; Sedimentation time has been selected 20min successively for use, 40min, 1h and 2h; Operating air pressure is set at 0.2Pa respectively, 0.3Pa, 0.5Pa and 0.7Pa; Temperature is controlled at room temperature; Target-substrate distance is 8em.By the ZnO film for preparing under different process conditions is compared, on the ITO substrate, deposit ZnO film and prepare the ZnO substrate to draw optimum process parameters.At last, the optimal processing parameter of resultant ZnO film in order to preparation ZnO/SnS heterojunction is: sedimentation time is 40min, and operating air pressure is 0.2Pa, and power is 150W.
The preparation of b.P type absorbed layer material SnS film: in the process of vacuum evaporation SnS, the factor that influences thickness mainly contains the characteristic of evaporation source, the physical property of evaporation source, the distance of evaporation source and substrate center etc.For confirming the SnS film thickness, adopted the crystal oscillating circuit that designs voluntarily that film growth is monitored in real time.Technological parameter during preparation SnS film is: underlayer temperature is 400K, and vacuum degree is 4.0 * 10
-4Pa, the distance of substrate and evaporation source is 10cm, and the evaporation source temperature is 1000 ℃, and optimum thickness is 150nm.
The preparation of c.Al electrode: adopt vacuum vapor deposition method to prepare the Al electrode, use the tungsten bar evaporation, aluminium wire is crooked and be hung on the tungsten bar that soda acid handled, on tungsten bar, increase voltage then.The affinity interaction that utilizes aluminium and tungsten can be affine naturally on tungsten bar after the aluminium wire dissolving when temperature raises, and should note keeping the deposition rate of Al electrode to remain on about 2～3nm/s when evaporation, can obtain the Al electrode that high-quality thickness is 100nm with this.
The SnS thin-film solar cells that the inventive method makes has certain photoelectric conversion efficiency, can success the part incident light is converted into electric energy, and this preparation method can effectively cut down finished cost and improves transformation efficiency.
By the performance of I-V photoelectricity test battery, the result shows: the SnS thin-film solar cells in the inventive method preparation has certain efficient, and the electrical parameter of device is during illumination: JSC=1.38mAcm
-2, VOC=0.42V, FF=0.40, Pmax=0.231mWcm
-2, its energy conversion efficiency η=0.231%.。
Claims (2)
1. the preparation method of a stannous sulfide solar cell, it is characterized in that on zinc oxide (ZnO) substrate, depositing stannous sulfide (SnS) film, and employing Al material is the solar cell that electrode has obtained luminous energy to be converted into electric energy by the magnetron sputtering method preparation by vacuum vapor deposition method.This method comprises following processing step:
The preparation of a.N type Window layer material ZnO film: adopt radio-frequency magnetron sputter method on the simple glass substrate, to prepare one deck intrinsic ZnO film, and on the ITO substrate, deposit ZnO film formation ZnO substrate with Window layer as solar cell with this parameter.Obtain in order to the optimal processing parameter of the ZnO film of preparation ZnO/SnS heterojunction be: sedimentation time is 40min, operating air pressure is 0.2Pa, power is 150W, the ZnO film quality for preparing under this condition is good, (FWHM) is less for halfwidth, and the surface is very smooth clean and tidy, relatively is applicable to the n layer ZnO film that is used for preparing in the ZnO/SnS heterojunction.
The preparation of b.P type absorbed layer material SnS film: adopt vacuum vapor deposition method on the ZnO substrate, prepare the SnS film, obtain in order to the technological parameter of the SnS film for preparing ZnO/SnS solar energy be: underlayer temperature is 400K, and vacuum degree is 4.0 * 10
-4Pa, the distance of substrate and evaporation source is 10cm, and the evaporation source temperature is 1000 ℃, and adopting the crystal oscillating circuit that designs voluntarily that the optimum thickness that has prepared the SnS film is monitored in film growth in real time is 150nm.
The preparation of c.Al electrode: adopt vacuum vapor deposition method to prepare the Al electrode, use the tungsten bar evaporation, aluminium wire is crooked and be hung on the tungsten bar that soda acid handled, on tungsten bar, increase voltage then.The affinity interaction that utilizes aluminium and tungsten can be affine naturally on tungsten bar after the aluminium wire dissolving when temperature raises, and should note keeping the deposition rate of Al electrode to remain on about 2～3nm/s when evaporation, can obtain the Al electrode that high-quality thickness is 100nm with this.
2. the preparation method of a kind of stannous sulfide solar cell according to claim 1, condition when it is characterized in that preparing ZnO substrate, vacuum vapor deposition method deposition SnS film and Al electrode by magnetron sputtering method is respectively: sedimentation time is 40min during sputter ZnO, operating air pressure is 0.2Pa, and power is 150W; Underlayer temperature is 400K during evaporation SnS, and vacuum degree is 4.0 * 10
-4Pa, the distance of substrate and evaporation source is 10cm, the evaporation source temperature is 1000 ℃; The speed of depositing Al electrode remains on about 2～3nm/s.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102503161A (en) * | 2011-10-19 | 2012-06-20 | 天津大学 | SnS nanocrystalline thin film preparation method |
| CN102912300A (en) * | 2012-11-07 | 2013-02-06 | 新疆大学 | Method for preparing SnS nanosheet by means of vacuum thermal evaporation without assistance of catalyst |
| CN103956396A (en) * | 2014-05-19 | 2014-07-30 | 攀枝花学院 | Stannous sulfide laminated thin-film solar cell and manufacturing method thereof |
| CN110699639A (en) * | 2019-09-05 | 2020-01-17 | 昆明理工大学 | ZnS/Sn/ZnO heterostructure thin film material and preparation method and application thereof |
-
2009
- 2009-05-22 CN CN2009100517619A patent/CN101894877A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102503161A (en) * | 2011-10-19 | 2012-06-20 | 天津大学 | SnS nanocrystalline thin film preparation method |
| CN102912300A (en) * | 2012-11-07 | 2013-02-06 | 新疆大学 | Method for preparing SnS nanosheet by means of vacuum thermal evaporation without assistance of catalyst |
| CN102912300B (en) * | 2012-11-07 | 2015-01-14 | 新疆大学 | Method for preparing SnS nanosheet by means of vacuum thermal evaporation without assistance of catalyst |
| CN103956396A (en) * | 2014-05-19 | 2014-07-30 | 攀枝花学院 | Stannous sulfide laminated thin-film solar cell and manufacturing method thereof |
| CN110699639A (en) * | 2019-09-05 | 2020-01-17 | 昆明理工大学 | ZnS/Sn/ZnO heterostructure thin film material and preparation method and application thereof |
| CN110699639B (en) * | 2019-09-05 | 2021-10-29 | 昆明理工大学 | ZnS/Sn/ZnO heterostructure thin film material and preparation method and application thereof |
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Application publication date: 20101124 |