CN103956372A - 堆叠式发光二极管阵列结构 - Google Patents
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Abstract
本发明提供一种堆叠式发光二极管阵列结构,包括一基板及多个依序堆叠于基板之上的发光二极管裸晶,每一发光二极管裸晶包括一第一半导体层及一第二半导体层,第一半导体层之上设置有一第一电极及叠设有第二半导体层,而第二半导体层之上设置有一第二电极及叠设有另一发光二极管裸晶的第一半导体层,每一发光二极管裸晶的第二电极通过一金属层与另一发光二极管裸晶的第一电极连接以串接成一发光二极管阵列,则,利用堆叠方式将多个发光二极管裸晶叠设成一发光二极管阵列,不仅容易进行制作且有效降低整体发光二极管阵列的设置体积。
Description
技术领域
本发明涉及一种发光二极管阵列结构,尤其涉及一种堆叠式的发光二极管阵列结构。
背景技术
发光二极管(Light Emitting Diode,LED)是一种半导体发光元件,其被施加正向偏压时,将会致电发光。目前发光二极管已经发展可以操作在高电压的交流电源(如AC110V/220V)上。再者,由于发光二极管相较于电灯泡(如白炽灯泡)或日光灯管(如萤光灯管)是具有低功率消耗及使用寿命长的优点,故发光二极管逐渐地取代电灯泡或日光灯管作为照明之用。
发光二极管应用于照明用途时,一般都会将多个发光二极管串接成一阵列形式,以利用多个发光二极管进行发光而获得一宽广的发光区域。
请参阅图1,为现有发光二极管阵列结构的结构示意图。如图所示,在单一基板11上,横向设置多个发光二极管裸晶13,并且每一发光二极管裸晶13间隔一定的距离。再者,每一发光二极管裸晶13的第一电极131利用一金属线15连接至另一相邻发光二极管裸晶13的第二电极132,并且利用金属线15将最左边发光二极管裸晶13的第一电极131连接至基板11的一第一电位垫111及利用金属线15将最右边发光二极管裸晶13的第二电极132连接至基板11的一第二电位垫113。在此,藉由金属线15的电性连接,而令这些发光二极管裸晶13可以串接成一发光二极管阵列100。
然而,由于现有发光二极管阵列100只能在一有限的横向空间内排列设置发光二极管裸晶13,导致一预定的区域空间内无法设置较多数量的发光二极管裸晶13,而令发光强度往往无法有效地提升。
或者,请参阅图2,为现有另一发光二极管阵列结构的结构示意图。如图所示,发光二极管阵列200包括一基板21及多个发光二极管元件23,这些发光二极管元件23分别为一封装完成的电子元件。各发光二极管元件23将以垂直方向堆叠设置于基板21之上,并且各发光二极管元件23之间将隔离设置一透光板材25。其中,最下层的发光二极管元件23的第一电极231利用金属线27连接至基板21的第一电位垫211,最上层的发光二极管元件23的第二电极233利用金属线27连接至基板21的第二电位垫213,以及各发光二极管元件23的第一电极231利用金属线27连接至另一发光二极管的第二电极233。在此,藉由金属线27的电性连接,以将这些发光二极管元件23串接成另一种发光二极管阵列200。
现有另一种发光二极管阵列200采用堆叠方式进行各发光二极管元件23的布设,虽然易于调整发光二极管元件23在一预定的区域空间内的设置数量。然而,该发光二极管阵列200必须采用每一封装完成后的发光二极管元件23作为基本的组成构件相对地也会增加封装的成本及整体的设置体积。
发明内容
本发明的一目的,在于提供一种堆叠式发光二极管阵列结构,其利用堆叠方式将多个发光二极管裸晶垂直地向上叠设成一发光二极管阵列,如此将可在一区域空间内设置较多数量的发光二极管裸晶。
本发明的一目的,在于提供一种堆叠式发光二极管阵列结构,其采用工艺方式是将制作多个发光二极管裸晶的半导体材料直接沉积于基板之上,以在基板之上形成发光二极管阵列,在此,不仅容易进行发光二极管阵列的制作,且可以有效降低发光二极管阵列整体的设置体积。
本发明的一目的,在于提供一种堆叠式发光二极管阵列结构,其可将多组堆叠式发光二极管阵列横向设置于基板之上,以进一步获得更宽广的发光区域及提升区域的发光强度。
本发明的一目的,在于提供一种堆叠式发光二极管阵列结构,其堆叠式发光二极管阵列是以覆晶方式设置于基板之上。
为达成上述目的,本发明提供一种堆叠式发光二极管阵列结构,包括:一基板,其表面设置一第一电位垫及一第二电位垫;多个发光二极管裸晶,依序堆叠于基板之上,每一发光二极管裸晶分别包括:一第一半导体层;及一第二半导体层,其中第一半导体层的上表面设置有一第一电极及叠设有第二半导体层,而第二半导体层的上表面设置有一第二电极及/或叠设另一个发光二极管的第一半导体层;及至少一金属层,每一发光二极管裸晶的第二电极通过对应的金属层与另一发光二极管裸晶的第一电极进行连接,以串接成一发光二极管阵列;其中,堆叠在最下方的第一半导体层的第一电极通过一金属线连接至基板的第一电位垫,堆叠在最上方的第二半导体层的第二电极通过另一金属线连接至基板的第二电位垫。
本发明又提供一种堆叠式发光二极管阵列结构,包括:一基板,其表面设置一第一电位垫及一第二电位垫;多个发光二极管裸晶,依序堆叠于基底之上,每一发光二极管裸晶分别包括:一第一半导体层;及一第二半导体层,其中第一半导体层的上表面设置有一第一电极及叠设有第二半导体层,而第二半导体层的上表面设置有一第二电极及/或叠设另一个发光二极管的第一半导体层;及至少一金属层,每一发光二极管裸晶的第二电极通过对应的金属层与另一发光二极管裸晶的第一电极进行连接,以串接成一发光二极管阵列;其中,发光二极管阵列通过覆晶形式设置于基板之上,堆叠在最下方的第一半导体层的第一电极连接至基板的第一电位垫,堆叠在最上方的第二半导体层的第二电极连接至基板的第二电位垫。
本发明一实施例中,其中第一半导体层为一N型半导体层,第二半导体层为一P型半导体层。
本发明一实施例中,其中在基板之上横向设置有多组堆叠式发光二极管阵列。
以下结合附图和具体实施例对本发明进行详细描述,但不作为对本发明的限定。
附图说明
图1现有发光二极管阵列结构的结构示意图;
图2现有另一发光二极管阵列结构的结构示意图;
图3本发明堆叠式发光二极管阵列结构一较佳实施例的结构示意图;
图4A-图4B:本发明堆叠式发光二极管阵列结构又一实施例的结构制作流程图;
图5本发明堆叠式发光二极管阵列结构又一实施例的结构示意图;
图6本发明堆叠式发光二极管阵列结构又一实施例的结构示意图。
其中,附图标记
100 发光二极管阵列 11 基板
111 第一电位垫 113 第二电位垫
13 发光二极管裸晶 131 第一电极
132 第二电极 15 金属线
200 发光二极管阵列 21 基板
211 第一电位垫 213 第二电位垫
23 发光二极管元件 231 第一电极
233 第二电极 25 透光板材
27 金属线 300 发光二极管阵列
301 发光二极管阵列 31 基板
311 第一电位垫 313 第二电位垫
33 发光二极管裸晶 330 基底
331 第一半导体层 3311 第一电极
333 第二半导体层 3331 第二电极
35 金属层 371 金属线
373 金属线
具体实施方式
下面结合附图对本发明的结构原理和工作原理作具体的描述:
请参阅图3,为本发明堆叠式发光二极管阵列结构一较佳实施例的结构示意图。如图所示,发光二极管阵列300包括一基板31及多个发光二极管裸晶33。
各发光二极管裸晶33依序堆叠于基板31之上,其分别包括有一第一半导体层331及一第二半导体层333。第一半导体层331为一N型半导体层,而第二半导体层333为一P型半导体层。
利用沉积程序,以将每一发光二极管裸晶33的第二半导体层333沉积叠设于第一半导体层331的部分表面上,以及将每一发光二极管裸晶33的第一半导体层331沉积叠设于基板31的部分表面上或另一发光二极管裸晶33的第二半导体层333的部分表面上。再者,第一半导体层331的一侧边外露表面可设置有一第一电极3311,而第二半导体层333的一侧边外露表面可设置有一第二电极3331。每一发光二极管裸晶33的第二电极3331分别通过一金属层35与另一发光二极管裸晶33的第一电极3311进行电性连接,以令这些发光二极管裸晶33可以串接成发光二极管阵列300。此外,金属层35同样利用沉积程序以沉积于第二半导体层333的侧边外露表面上。
又,基板31的表面尚设置一第一电位垫311及一第二电位垫313。第一电位垫311亦可为一接地的电位垫,而第二电位垫313亦可为一供电的电位垫。于本发明实施例中,堆叠于最下方的第一半导体层331的第一电极3311可以通过一金属线371连接至基板31的第一电位垫311,而堆叠在最上方的第二半导体层333的第二电极3331通过另一金属线373连接至基板31的第二电位垫313。则,经由基板31的第一电位垫311及第二电位垫313传送供电电源,以使发光二极管阵列300可以驱动发光。
在此,本发明采用工艺的方式是将制作多个发光二极管裸晶33的半导体材料331、333依序垂直地向上沉积叠设于基板31之上,以在基板31之上形成发光二极管阵列300。如此,不仅容易进行发光二极管阵列300的制作,且有效降低发光二极管阵列300整体的设置体积,并可以在一区域空间内设置较多数量的发光二极管裸晶33。
请参阅图4A-图4B,为本发明堆叠式发光二极管阵列结构又一实施例的结构制作流程图。在上述实施例中,发光二极管阵列300采用打线方式(如金属线371、373)电性接合至基板31的第一电位垫311及第二电位垫313。而,在本实施例中,发光二极管阵列301采用覆晶方式电性接合至基板31的第一电位垫311及第二电位垫313。
如图4A所示,首先,多个发光二极管裸晶33将会依序堆叠在一透光的基底330之上,以在基底330之上形成一发光二极管阵列301。接着,如图4B所示,发光二极管阵列301形成之后,翻转发光二极管阵列301,以令堆叠在最下方的第一半导体层331的第一电极3311利用凸块接合至基板31的第一电位垫311,而堆叠在最上方的第二半导体层333的第二电极3331利用凸块接合至基板31的第二电位垫313。
则,本发明堆叠式的发光二极管阵列301采用覆晶方式设置于基板31之上,将可以增加发光二极管阵列301与基板31之间电性连接上的稳定性。
请参阅图5,为本发明堆叠式发光二极管阵列结构又一实施例的结构示意图。如图所示,多组堆叠式发光二极管阵列300可以利用打线的方式横向设置于基板31之上。
或者,请参阅图6,为本发明堆叠式发光二极管阵列结构又一实施例的结构示意图。如图所示,多组堆叠式发光二极管阵列301可以利用覆晶的方式横向设置于基板31之上。
在此,本发明若应用于照明用途时,于基板31之上设置多组堆叠式的发光二极管阵列300/301,将可以获得更宽广的发光区域及提升区域的发光强度。
当然,本发明还可有其他多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。
Claims (6)
1.一种堆叠式发光二极管阵列结构,其特征在于,包括:
一基板,其表面设置一第一电位垫及一第二电位垫;
多个发光二极管裸晶,依序堆叠于基板之上,每一发光二极管裸晶分别包括:
一第一半导体层;及
一第二半导体层,其中第一半导体层的上表面设置有一第一电极及叠设有第二半导体层,而第二半导体层的上表面设置有一第二电极及/或叠设另一个发光二极管的第一半导体层;及
至少一金属层,每一发光二极管裸晶的第二电极通过对应的金属层与另一发光二极管裸晶的第一电极进行连接,以串接成一发光二极管阵列;
其中,堆叠在最下方的第一半导体层的第一电极通过一金属线连接至基板的第一电位垫,堆叠在最上方的第二半导体层的第二电极通过另一金属线连接至基板的第二电位垫。
2.根据权利要求1所述的堆叠式发光二极管阵列结构,其特征在于,该第一半导体层为一N型半导体层,该第二半导体层为一P型半导体层。
3.根据权利要求1所述的堆叠式发光二极管阵列结构,其特征在于,在该基板之上横向设置有多组该堆叠式发光二极管阵列。
4.一种堆叠式发光二极管阵列结构,其特征在于,包括:
一基板,其表面设置一第一电位垫及一第二电位垫;
多个发光二极管裸晶,依序堆叠于基底之上,每一发光二极管裸晶分别包括:
一第一半导体层;及
一第二半导体层,其中第一半导体层的上表面设置有一第一电极及叠设有第二半导体层,而第二半导体层的上表面设置有一第二电极及/或叠设另一个发光二极管的第一半导体层;及
至少一金属层,每一发光二极管裸晶的第二电极通过对应的金属层与另一发光二极管裸晶的第一电极进行连接,以串接成一发光二极管阵列;
其中,发光二极管阵列通过覆晶形式设置于基板之上,堆叠在最下方的第一半导体层的第一电极连接至基板的第一电位垫,堆叠在最上方的第二半导体层的第二电极连接至基板的第二电位垫。
5.根据权利要求4所述的堆叠式发光二极管阵列结构,其特征在于,该第一半导体层为一N型半导体层,该第二半导体层为一P型半导体层。
6.根据权利要求4所述的堆叠式发光二极管阵列结构,其特征在于,在该基板之上横向设置有多组该堆叠式发光二极管阵列。
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TW102110508A TW201438188A (zh) | 2013-03-25 | 2013-03-25 | 堆疊式發光二極體陣列結構 |
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