CN103955123A - Wet photoresist removing liquid and photoresist removing method of wafers after ion implantation - Google Patents
Wet photoresist removing liquid and photoresist removing method of wafers after ion implantation Download PDFInfo
- Publication number
- CN103955123A CN103955123A CN201410146735.5A CN201410146735A CN103955123A CN 103955123 A CN103955123 A CN 103955123A CN 201410146735 A CN201410146735 A CN 201410146735A CN 103955123 A CN103955123 A CN 103955123A
- Authority
- CN
- China
- Prior art keywords
- photoresist removing
- liquid
- photoresist
- wet
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention relates to a wet photoresist removing liquid and a photoresist removing method of wafers after ion implantation. The wet photoresist removing liquid is an inorganic alkali solution; pH value of the wet photoresist removing liquid ranges from 7 to 14. The wet photoresist removing liquid comprises following ingredients, by mass, 30 to 40% of an inorganic base, 1 to 5% of hydrogen peroxide, and the balance deionized water. The wet photoresist removing liquid is prepared by mixing the above ingredients. According to the photoresist removing method, the wafers after iron implantation are delivered into a basket, and are immersed in the wet photoresist removing liquid for 20 to 40s of photoresist removing treatment, wherein the basket is shaken upward and downward at a speed of one time per second, and shaking travel ranges from 2 to 4cm; after photoresist removing treatment, the wafers are washed with deionized water, and are subjected to blow drying with nitrogen. No external force is introduced into the whole photoresist removing process; simple chemical immersion is adopted, so that no damage of the surfaces of the wafers or stress precipitation is caused; a preparation method is simple, cost is low, and photoresist removing effect is obvious; the photoresist removing method is capable of removing denatured photoresists quickly; waste liquid processing is simple; the wet photoresist removing liquid is an inorganic liquid, and no pollution on the environment is caused.
Description
Technical field
The invention belongs to wet method after a kind of Implantation remove photoresist liquid and photoresist removal method, the degumming process field that particularly after group Ⅲ-Ⅴ compound semiconductor wafer Implantation, photoresist is removed.
Background technology
In infrared eye manufacturing process, Implantation is effective isolating means of planarized structure device, is the important process of preparation high-performance photovoltaic type HgCdTe infrared focal plane detector.But because injection process is that the kinetic transformation of elastic collision is heat energy with the Ions Bombardment sample with KeV-GeV energy, the temperature that macro manifestations is sample raises, in injection process, the release of power will cause that sample temperature raises.
And as the mask lithography glue of Implantation, very important in ion implantation process, mask lithography glue does not need injection zone to form the mutual isolation between device in order to stop, but mask lithography glue is subject to Ions Bombardment and accepts the heat that wafer transferring is come, can cause photoresist sex change after Implantation, make the very difficult removal of photoresist.And photoresist residue removal is unclean, can cause the chain reaction of subsequent technique, finally cause device electrode Joint failure, it is large that dark current becomes, and detector blind element rate increases, and responsiveness is inhomogeneous, on detector image-forming image, there is dodging unit, even large stain or defect in blocks.Therefore, the degumming process particular importance that seems after infrared detector chip Implantation.
IC industry, after Implantation, the normal plasma apparatus that uses high temperature high power removes photoresist, and the method for removing removing residual glue that adopts high-temperature concentrated sulfuric acid and hydrogen peroxide ensures to remove photoresist completely, and compound semiconductor wafer is very fragile, do not lived high-power plasma, be subject to too not live the immersion of high temperature and strong acid.Traditional degumming process, adopts the organic solvents such as acetone, ether to soak and removes photoresist, or the Ammonia weak base liquid etc. that removes photoresist, but effect is very general, and the time of removing photoresist is long and often remove photoresist unclean or residual.
Summary of the invention
The defect that object of the present invention is removed photoresist after to compound semiconductor wafer Implantation in order to overcome prior art, provides the wet method after Implantation remove photoresist liquid and photoresist removal method, improves explained hereafter efficiency.
The present invention also provides by the wet method of wafer after this kind of Implantation and removes photoresist and remove the method for photoresist after liquid removal method.
The technical solution adopted for the present invention to solve the technical problems is:
After Implantation, the wet method of the wafer liquid that removes photoresist, is characterized in that: the liquid that removes photoresist is inorganic alkaline liquid, and pH value is 7-14; The constituent of liquid of removing photoresist is: by mass percentage, inorganic base 30-40%, hydrogen peroxide 1-5%, all the other are deionized water, and above-mentioned each component is mixed.
The liquid that removes photoresist of the present invention, easily removes, and is difficult for remaining in wafer surface.Utilization remove photoresist oxidisability and the alkalescence of liquid, make photoresist swelling and depart from wafer surface, reaches the object of removing photoresist.The liquid that removes photoresist is the inorganic liquid that removes photoresist, and under deionized water rinsing, is difficult for residually, can not affect the follow-up manufacturing process of wafer, does not affect wafer electric property and physical property.
A kind of photoresist removal method of wafer after Implantation, is characterized in that carrying out according to the following steps: (1) prepares the liquid that removes photoresist, and the constituent of the liquid that removes photoresist is: by mass percentage, inorganic base 30-40%, hydrogen peroxide 1-5%, all the other are deionized water, each component mixes; (2) wafer after Implantation is packed in hand basket, the processing of removing photoresist in the liquid that removes photoresist of immersion step (1), shakes up and down with the speed of 1 time/second, shake stroke is 2-4cm, remove photoresist to process after 20-40s and take out, with deionized water rinsing, dry up wafer with nitrogen.At the micro-Microscopic observation of mirror image, residual without photoresist after being disposed, photoresist counterdie is removed clean.
The invention has the beneficial effects as follows: the whole process of removing photoresist gets involved without external force that simple chemical immersion, to wafer surface not damaged, can not cause stress precipitation; Preparation is simple, cost is low, the effect of removing photoresist is remarkable, can remove fast that photoresist, liquid waste processing after sex change is simple, the liquid that removes photoresist is inorganic-liquid environmentally safe.
Embodiment
Below in conjunction with embodiment, the present invention is elaborated.
Embodiment 1
Prepare the liquid 500g that removes photoresist of the present invention: take 200g solid sodium hydroxide, under the effect of mixing power, be dissolved in 295g deionized water, add 5g H
2o
2, be positioned in the container that fills cold water and be cooled to room temperature, make the liquid that removes photoresist of the present invention.With the liquid that removes photoresist the preparing experiment of removing photoresist, adopt wafer after hand basket splendid attire Implantation, immerse the processing of removing photoresist in the liquid that removes photoresist preparing, speed with 1 time/second is shaken up and down, and shake stroke is 3cm, after the processing 30s that removes photoresist, takes out, with deionized water rinsing, dry up wafer with nitrogen.At the micro-Microscopic observation of mirror image, residual without photoresist after being disposed; Laboratory sample is carried out to wafer process tracking, and to subsequent technique, processing does not exert an influence; Laboratory sample is carried out to electrical performance testing and detector imaging test, do not occur harmful effect.
Embodiment 2
Prepare the liquid 500g that removes photoresist of the present invention: take 150g solid sodium hydroxide, under the effect of mixing power, be dissolved in 325g deionized water, add 25g H
2o
2, be positioned in the container that fills cold water and be cooled to room temperature, make the liquid that removes photoresist of the present invention.With the liquid that removes photoresist the preparing experiment of removing photoresist, adopt wafer after hand basket splendid attire Implantation, immerse the processing of removing photoresist in the liquid that removes photoresist preparing, speed with 1 time/second is shaken up and down, and shake stroke is 2cm, after the processing 20s that removes photoresist, takes out, with deionized water rinsing, dry up wafer with nitrogen.At the micro-Microscopic observation of mirror image, residual without photoresist after being disposed; Laboratory sample is carried out to wafer process tracking, and to subsequent technique, processing does not exert an influence; Laboratory sample is carried out to electrical performance testing and detector imaging test, do not occur harmful effect.
Embodiment 3
Prepare the liquid 500g that removes photoresist of the present invention: take 175g solid sodium hydroxide, under the effect of mixing power, be dissolved in 310g deionized water, add 15g H
2o
2, be positioned in the container that fills cold water and be cooled to room temperature, make the liquid that removes photoresist of the present invention.With the liquid that removes photoresist the preparing experiment of removing photoresist, adopt wafer after hand basket splendid attire Implantation, immerse the processing of removing photoresist in the liquid that removes photoresist preparing, speed with 1 time/second is shaken up and down, and shake stroke is 4cm, after the processing 40s that removes photoresist, takes out, with deionized water rinsing, dry up wafer with nitrogen.At the micro-Microscopic observation of mirror image, residual without photoresist after being disposed; Laboratory sample is carried out to wafer process tracking, and to subsequent technique, processing does not exert an influence; Laboratory sample is carried out to electrical performance testing and detector imaging test, do not occur harmful effect.
The mode of removing photoresist of the present invention is not introduced external force, simple chemical immersion.With the liquid that removes photoresist the preparing experiment of removing photoresist, adopt wafer after hand basket splendid attire Implantation, immerse the processing of removing photoresist in this liquid that removes photoresist, at the micro-Microscopic observation of mirror image, residual without photoresist after being disposed; Laboratory sample is carried out to wafer process tracking, subsequent technique is processed without negative effect; Organic solvent such as contrast traditional acetone etc. removes photoresist, and laboratory sample is carried out to electrical performance testing and detector imaging test, the present invention's high, clean noresidue of efficiency of removing photoresist, and imaging blind element number reduces 50%-75%.
Claims (2)
1. the wet method of the wafer liquid that removes photoresist after Implantation, is characterized in that: the liquid that removes photoresist is inorganic alkaline liquid, and pH value is 7-14; The constituent of liquid of removing photoresist is: by mass percentage, inorganic base 30-40%, hydrogen peroxide 1-5%, all the other are deionized water, and above-mentioned each component is mixed.
2. the photoresist removal method of wafer after an Implantation, is characterized in that carrying out according to the following steps: (1) prepares the liquid that removes photoresist, and the constituent of the liquid that removes photoresist is: by mass percentage, inorganic base 30-40%, hydrogen peroxide 1-5%, all the other are deionized water, each component mixes; (2) wafer after Implantation is packed in hand basket, the processing of removing photoresist in the liquid that removes photoresist of immersion step (1), shakes up and down with the speed of 1 time/second, shake stroke is 2-4cm, remove photoresist to process after 20-40s and take out, with deionized water rinsing, dry up wafer with nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410146735.5A CN103955123A (en) | 2014-04-11 | 2014-04-11 | Wet photoresist removing liquid and photoresist removing method of wafers after ion implantation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410146735.5A CN103955123A (en) | 2014-04-11 | 2014-04-11 | Wet photoresist removing liquid and photoresist removing method of wafers after ion implantation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103955123A true CN103955123A (en) | 2014-07-30 |
Family
ID=51332409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410146735.5A Pending CN103955123A (en) | 2014-04-11 | 2014-04-11 | Wet photoresist removing liquid and photoresist removing method of wafers after ion implantation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103955123A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105319872A (en) * | 2014-07-15 | 2016-02-10 | 沈阳芯源微电子设备有限公司 | Developing liquid constant temperature maintaining pipeline system |
| CN106298584A (en) * | 2015-06-02 | 2017-01-04 | 沈阳芯源微电子设备有限公司 | One removes glue constant temperature system |
| CN110510574A (en) * | 2019-08-31 | 2019-11-29 | 大连理工大学 | The method of easy removal SU-8 photoresist during preparing intensive micro array structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1659481A (en) * | 2002-06-07 | 2005-08-24 | 马林克罗特贝克公司 | Microelectronic cleaning compositions containing oxidant and organic solvent |
| US20050250660A1 (en) * | 2004-04-19 | 2005-11-10 | Masayuki Takashima | Photoresist stripper |
| CN1938647A (en) * | 2004-03-03 | 2007-03-28 | 高级技术材料公司 | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| CN101632042A (en) * | 2007-03-16 | 2010-01-20 | 三菱瓦斯化学株式会社 | Cleaning composition and process for producing semiconductor device |
-
2014
- 2014-04-11 CN CN201410146735.5A patent/CN103955123A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1659481A (en) * | 2002-06-07 | 2005-08-24 | 马林克罗特贝克公司 | Microelectronic cleaning compositions containing oxidant and organic solvent |
| CN1938647A (en) * | 2004-03-03 | 2007-03-28 | 高级技术材料公司 | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| US20050250660A1 (en) * | 2004-04-19 | 2005-11-10 | Masayuki Takashima | Photoresist stripper |
| CN101632042A (en) * | 2007-03-16 | 2010-01-20 | 三菱瓦斯化学株式会社 | Cleaning composition and process for producing semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105319872A (en) * | 2014-07-15 | 2016-02-10 | 沈阳芯源微电子设备有限公司 | Developing liquid constant temperature maintaining pipeline system |
| CN105319872B (en) * | 2014-07-15 | 2020-02-07 | 沈阳芯源微电子设备股份有限公司 | Developing solution constant-temperature maintaining pipeline system |
| CN106298584A (en) * | 2015-06-02 | 2017-01-04 | 沈阳芯源微电子设备有限公司 | One removes glue constant temperature system |
| CN106298584B (en) * | 2015-06-02 | 2018-09-28 | 沈阳芯源微电子设备有限公司 | One kind removing glue constant temperature system |
| CN110510574A (en) * | 2019-08-31 | 2019-11-29 | 大连理工大学 | The method of easy removal SU-8 photoresist during preparing intensive micro array structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101362913B1 (en) | Compositions and Methods for Texturing of Silicon Wafers | |
| KR101746879B1 (en) | Post ion implant stripper for advanced semiconductor application | |
| CN104377119B (en) | Method for cleaning germanium single crystal polished wafer | |
| CN103955123A (en) | Wet photoresist removing liquid and photoresist removing method of wafers after ion implantation | |
| CN104009122B (en) | The do over again processing method of silicon chip of a kind of serigraphy | |
| CN102522319A (en) | Embedding unpackaging method for plastic packaged device packaged by flip chip bonding process | |
| CN105914137B (en) | A kind of wet process silicon wafer cleaning method | |
| TWI514094B (en) | Stripper composition for thick negative photoresist | |
| WO2014081464A1 (en) | Process for removing substances from substrates | |
| CN105609408A (en) | Forming method of semiconductor device | |
| WO2015119759A1 (en) | Composition for removing substances from substrates | |
| CN102364697B (en) | Method for removing micro-damage layer from crystalline silicon surface after RIE (Reactive Ion Etching) flocking | |
| CN102306683A (en) | Processing method of silicon chip reworked after screen printing | |
| JP6275090B2 (en) | Process separation type substrate processing apparatus and processing method | |
| TW201723166A (en) | A cleaning liquid for removing photoresist residue, with little corrosion on base material | |
| CN103242985B (en) | Cleaning agent for antireflective coating of organic light-emitting micro-display and cleaning process | |
| CN202058706U (en) | Wafer spray rinsing drying device | |
| CN116871299A (en) | Recovery processing method of waste photovoltaic modules | |
| JP7160238B2 (en) | Stripping composition for removing dry film resist and method for stripping dry film resist using the same | |
| JP5667092B2 (en) | Method for weaving a silicon wafer, treatment liquid for the method and use thereof | |
| KR101918180B1 (en) | Hydrometallurgical method for recovery of metals and/or semimetals from waste materials containing compound semiconductor materials and/or back contact materials and/or transparent electrically conducting oxides (TCO's) | |
| CN105483833A (en) | Dislocation etching method for aluminum nitride single crystal | |
| CN104596829A (en) | Secondary defect detection solution and method for silicon wafer | |
| CN104078327A (en) | Cleaning method after ion implantation | |
| CN103605270B (en) | A kind of water base silicon chip cleaning liquid of photoresist and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140730 |
|
| WD01 | Invention patent application deemed withdrawn after publication |