CN105914137B - A kind of wet process silicon wafer cleaning method - Google Patents
A kind of wet process silicon wafer cleaning method Download PDFInfo
- Publication number
- CN105914137B CN105914137B CN201610464167.2A CN201610464167A CN105914137B CN 105914137 B CN105914137 B CN 105914137B CN 201610464167 A CN201610464167 A CN 201610464167A CN 105914137 B CN105914137 B CN 105914137B
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- Prior art keywords
- silicon wafer
- solution
- deionized water
- cleaning
- temperature
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004140 cleaning Methods 0.000 title claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000243 solution Substances 0.000 claims abstract description 20
- 239000008367 deionised water Substances 0.000 claims abstract description 19
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 19
- 229910001868 water Inorganic materials 0.000 claims abstract description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 18
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000005416 organic matter Substances 0.000 claims abstract description 6
- 238000004090 dissolution Methods 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000011259 mixed solution Substances 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
Abstract
The invention discloses a kind of wet process silicon wafer cleaning methods, comprising the following steps: step 1 uses the organic matter and metal on the mixed solution cleaning silicon chip of sulfuric acid, hydrogen peroxide and deionized water；Step 2 is rinsed silicon wafer using deionized water；Step 3,50 DEG C~60 DEG C at a temperature of, use the mixture of hydrofluoric acid and water dissolution silicon wafer on oxide layer；Step 4 cleans silicon wafer using deionized water；Step 5,55 DEG C~70 DEG C at a temperature of, silicon wafer is cleaned using SC-1 solution；Step 6 cleans silicon wafer using deionized water；Step 7,55 DEG C~70 DEG C at a temperature of, silicon wafer is cleaned using SC-2 solution；Step 8 impregnates silicon wafer using HF solution.The present invention has used suitable temperature range in cleaning, and compared with the wet cleaning techniques of existing room temperature, reaction rate is accelerated, then under identical degree of cleaning, the harmful chemicals such as hydrofluoric acid used in the present invention are reduced.
Description
Technical field
The present invention relates to silicon wafer cleaning methods, and in particular to a kind of wet process silicon wafer cleaning method.
Background technique
Semiconductor is made of silicon wafer, and since the critical size on silicon wafer persistently reduces, silicon chip surface is being subjected to technique
It must be clean before.It is to prevent from staiing particle silicon wafer that most effective approach is stain in control.But once silicon chip surface is stained with
Dirt, pollutant must be excluded by cleaning.The pollutant on its surface, including particle, organic matter, gold are removed when Wafer Cleaning
Category, oxide etc..
Existing technology is cleaned using wet chemistry method.But HF solution used in existing method is excessive,
HF solution is larger to the harm of human body using relatively hazardous.
Summary of the invention
In view of the deficiencies of the prior art, the invention discloses a kind of wet process silicon wafer cleaning methods.
Technical scheme is as follows:
A kind of wet process silicon wafer cleaning method, comprising the following steps:
Step 1 uses the organic matter and metal on the mixed solution cleaning silicon chip of sulfuric acid, hydrogen peroxide and deionized water；
The volume ratio of the sulfuric acid, hydrogen peroxide and deionized water is H2SO4: H2O2: H2O=400:20:1；
Step 2 is rinsed silicon wafer using deionized water；
Step 3,50 DEG C~60 DEG C at a temperature of, use the mixture of hydrofluoric acid and water dissolution silicon wafer on oxide layer；
The volume ratio of the hydrofluoric acid and water is HF:H2O=5:1；
Step 4 cleans silicon wafer using deionized water；
Step 5,55 DEG C~70 DEG C at a temperature of, silicon wafer is cleaned using SC-1 solution；In the SC-1
Liquor capacity ratio are as follows: NH4OH:H2O2:H2O=1:4:20；
Step 6 cleans silicon wafer using deionized water；
Step 7,55 DEG C~70 DEG C at a temperature of, silicon wafer is cleaned using SC-2 solution；It is molten in the SC-2
Liquid volume ratio are as follows: HCl:H2O2:H2O=1:1:50；
Step 8 impregnates silicon wafer using HF solution.
The method have the benefit that:
The present invention has used suitable temperature range in cleaning, compared with the wet cleaning techniques of existing room temperature, instead
Rate is answered to accelerate, then under identical degree of cleaning, the harmful chemicals such as hydrofluoric acid used in the present invention are reduced.And
The present invention is compared with the wet cleaning techniques of existing high temperature, and the present invention need not be heated to up to a hundred degrees Celsius, and reaction condition is more
Mildly, and the required energy of reaction has been saved.
Detailed description of the invention
Fig. 1 is flow chart of the invention.
Specific embodiment
Fig. 1 is flow chart of the invention.As shown in Figure 1, step of the invention includes:
Step 1 uses the organic matter and metal on the mixed solution cleaning silicon chip of sulfuric acid, hydrogen peroxide and deionized water；
The volume ratio of sulfuric acid, hydrogen peroxide and deionized water are as follows: H2SO4: H2O2: H2O=400:20:1.This step can get rid of silicon wafer
On particle.
Step 2 is rinsed silicon wafer using deionized water；
Step 3,50 DEG C~60 DEG C at a temperature of, use the mixture of hydrofluoric acid and water dissolution silicon wafer on oxide layer；
The volume ratio of the hydrofluoric acid and water is HF:H2O=5:1.
Step 4 cleans silicon wafer using deionized water；
Step 5,55 DEG C~70 DEG C at a temperature of, silicon wafer is cleaned using SC-1 solution；In the SC-1
Liquor capacity ratio are as follows: NH4OH:H2O2: H2O=1:4:20；This step uses electrochemical process, for removing the particle on silicon wafer.Hydrogen
Oxygen root accumulates negative electrical charge on silicon chip surface, so that the particulate matter of silicon chip surface is ostracised and enters solution.Cleaning solution is by metal
With trapped electron in organic matter and be oxidized, be allowed to dissolution in the solution.
Step 6 cleans silicon wafer using deionized water；
Step 7,55 DEG C~70 DEG C at a temperature of, silicon wafer is cleaned using SC-2 solution；It is molten in the SC-2
Liquid volume ratio are as follows: HCl:H2O2: H2O=1:1:50；This step is used to remove the metallics of silicon chip surface, so using acid
Solution.
Step 8 impregnates silicon wafer using HF solution.This step is oxidized in air for stopping silicon wafer, so that
The clean conditions of silicon chip surface holding high stable.
What has been described above is only a preferred embodiment of the present invention, and present invention is not limited to the above embodiments.It is appreciated that this
The other improvements and change that field technical staff directly exports or associates without departing from the spirit and concept in the present invention
Change, is considered as being included within protection scope of the present invention.
Claims (1)
1. a kind of wet process silicon wafer cleaning method, which comprises the following steps:
Step 1 uses the organic matter and metal on the mixed solution cleaning silicon chip of sulfuric acid, hydrogen peroxide and deionized water；It is described
The volume ratio of sulfuric acid, hydrogen peroxide and deionized water is H2SO4: H2O2: H2O=400:20:1；
Step 2 is rinsed silicon wafer using deionized water；
Step 3,50 DEG C~60 DEG C at a temperature of, use the mixture of hydrofluoric acid and water dissolution silicon wafer on oxide layer；It is described
The volume ratio of hydrofluoric acid and water is HF:H2O=5:1；
Step 4 cleans silicon wafer using deionized water；
Step 5,55 DEG C~70 DEG C at a temperature of, silicon wafer is cleaned using SC-1 solution；Solution in the SC-1
Volume ratio are as follows: NH4OH:H2O2:H2O=1:4:20；
Step 6 cleans silicon wafer using deionized water；
Step 7,55 DEG C~70 DEG C at a temperature of, silicon wafer is cleaned using SC-2 solution；Solution body in the SC-2
Product ratio are as follows: HCl:H2O2:H2O=1:1:50；
Step 8 impregnates silicon wafer using HF solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610464167.2A CN105914137B (en) | 2016-06-23 | 2016-06-23 | A kind of wet process silicon wafer cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610464167.2A CN105914137B (en) | 2016-06-23 | 2016-06-23 | A kind of wet process silicon wafer cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105914137A CN105914137A (en) | 2016-08-31 |
| CN105914137B true CN105914137B (en) | 2019-07-26 |
Family
ID=56758539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610464167.2A Active CN105914137B (en) | 2016-06-23 | 2016-06-23 | A kind of wet process silicon wafer cleaning method |
Country Status (1)
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| CN (1) | CN105914137B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106583053A (en) * | 2016-12-21 | 2017-04-26 | 晶科能源有限公司 | Silicon material floatation and cleaning method |
| CN106964593B (en) * | 2017-04-17 | 2019-09-17 | 安徽一路明光电科技有限公司 | A kind of cleaning method of LED light silicon wafer circuitry plate |
| CN108722977A (en) * | 2017-04-20 | 2018-11-02 | 隆基绿能科技股份有限公司 | Raw material cleaning device and material cleaning apparatus |
| CN107611016A (en) * | 2017-09-21 | 2018-01-19 | 晶科能源有限公司 | A kind of cleaning method of solar power silicon sheet stock |
| CN111540670B (en) * | 2020-05-11 | 2023-10-24 | 粤芯半导体技术股份有限公司 | Wet cleaning method for wafer and manufacturing method for semiconductor device |
| CN114806747A (en) * | 2022-04-28 | 2022-07-29 | 安徽富乐德科技发展股份有限公司 | Wafer cleaning water and method for cleaning wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013453A (en) * | 2009-09-04 | 2011-04-13 | 复旦大学 | Method for preparing anti-ferroelectric thin film with high pyroelectric performance |
| CN102956686A (en) * | 2011-08-18 | 2013-03-06 | 中国科学院微电子研究所 | Silicon germanium nanostructure substrate and manufacturing method thereof |
| CN103199014A (en) * | 2013-03-05 | 2013-07-10 | 中国科学院微电子研究所 | Method for thinning and polishing indium phosphide (InP) materials |
-
2016
- 2016-06-23 CN CN201610464167.2A patent/CN105914137B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013453A (en) * | 2009-09-04 | 2011-04-13 | 复旦大学 | Method for preparing anti-ferroelectric thin film with high pyroelectric performance |
| CN102956686A (en) * | 2011-08-18 | 2013-03-06 | 中国科学院微电子研究所 | Silicon germanium nanostructure substrate and manufacturing method thereof |
| CN103199014A (en) * | 2013-03-05 | 2013-07-10 | 中国科学院微电子研究所 | Method for thinning and polishing indium phosphide (InP) materials |
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| CN105914137A (en) | 2016-08-31 |
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