CN103605270B - A kind of water base silicon chip cleaning liquid of photoresist and preparation method thereof - Google Patents
A kind of water base silicon chip cleaning liquid of photoresist and preparation method thereof Download PDFInfo
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- CN103605270B CN103605270B CN201310527927.6A CN201310527927A CN103605270B CN 103605270 B CN103605270 B CN 103605270B CN 201310527927 A CN201310527927 A CN 201310527927A CN 103605270 B CN103605270 B CN 103605270B
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Abstract
A kind of water base silicon chip cleaning liquid of photoresist, it is characterised in that be prepared by the raw materials in: triethanolamine 23, tetrahydrofurfuryl alcohol 45, BTA 12, dodecylbenzene sodium sulfonate 23, sodium benzoate 23, sodium molybdate 12, ethanol 30 40, auxiliary agent 45, deionized water 100 120.The abluent of the present invention may be used for the removal of photoresist in LED and quasiconductor, does not the most attack simultaneously for silicon chip, and low cost, cleans simple.The auxiliary agent of the present invention can form protecting film at silicon chip surface, completely cuts off air, prevents water and other molecule corrosion of silicon, antioxidation in air, facilitate next step processing technology to carry out.
Description
Technical field
The present invention relates to abluent field, particularly relate to a kind of water base silicon chip cleaning liquid of photoresist and preparation method thereof.
Background technology
Silicon slice detergent is widely used in the industry Wafer Cleanings such as photovoltaic, electronics；Owing to silicon chip can pollute in transportation, surface cleanliness is not the highest, and the corrosion to carrying out has a huge impact with etching, so first having to silicon chip surface is carried out a series of cleaning operation.First the general thinking cleaned is the organic contaminations removing surface, then dissolves oxide-film, because oxide layer is " contamination is trapped into ", can cause epitaxy defect；Remove particle-removing, metal etc. again, make the surface passivation of silicon chip simultaneously.
Most silicon slice detergents use a liquid in RAC cleaning and No. three liquid, but a liquid shows alkalescence, is likely to result in silicon face coarse, strict temperature control, concentration and time；No. three aobvious acidity of liquid, have severe corrosive, the most unfavorable to health, production cost is high, irritant abnormal smells from the patient, pollutes environment, it is thus desirable to improve formula further, with reach to clean thorough, pollution-free, corrode little, to health, circuit safety, the purpose of reduction cost.
Summary of the invention
It is an object of the invention to provide a kind of water base silicon chip cleaning liquid of photoresist and preparation method thereof, this abluent has photoresist cleaning speed fast, little to silicon slice corrosion.
Technical scheme is as follows:
A kind of water base silicon chip cleaning liquid of photoresist, it is characterised in that be prepared by the raw materials in: triethanolamine 2-3, tetrahydrofurfuryl alcohol 4-5, BTA 1-2, dodecylbenzene sodium sulfonate 2-3, sodium benzoate 2-3, sodium molybdate 1-2, ethanol 30-40, auxiliary agent 4-5, deionized water 100-120；
Described auxiliary agent is prepared by the raw materials in: Silane coupling reagent KH-570
2-3, antioxidant 1035 1-2, phytic acid 1-2, morpholine 3-4, methacrylic acid-2-
Hydroxy methacrylate 3-4, ethanol 12-15；Preparation method is by Silane coupling reagent KH-570, phytic acid, ethanol mixing, is heated to 60-70 DEG C, after stirring 20-30 minute, adds other residual components, be warming up to 80-85 DEG C, stirs 30-40 minute, to obtain final product.
The preparation method of the water base silicon chip cleaning liquid of described photoresist, it is characterized in that comprising the following steps: by deionized water, triethanolamine, tetrahydrofurfuryl alcohol, BTA, dodecylbenzene sodium sulfonate, sodium benzoate, sodium molybdate, ethanol mixing, under stirring at 1000-1200 rev/min, it is heated to 60-70 DEG C with the speed of 6-8 DEG C/minute, add other residual componentss, continue stirring 15-20 minute, to obtain final product.
Beneficial effects of the present invention
The abluent of the present invention may be used for the removal of photoresist in LED and quasiconductor, does not the most attack simultaneously for silicon chip, and low cost, cleans simple.The auxiliary agent of the present invention can form protecting film at silicon chip surface, completely cuts off air, prevents water and other molecule corrosion of silicon, antioxidation in air, facilitate next step processing technology to carry out.
Detailed description of the invention
A kind of water base silicon chip cleaning liquid of photoresist, is made up of the raw material of following weight portion (kilogram): triethanolamine 2.5, tetrahydrofurfuryl alcohol 4.5, BTA 1.5, dodecylbenzene sodium sulfonate 2.4, sodium benzoate 2.5, sodium molybdate 1.5, ethanol 35, auxiliary agent 4.5, deionized water 110；
Described auxiliary agent is made up of the raw material of following weight portion (kilogram): Silane coupling reagent KH-570
2.5, antioxidant 1,035 1.5, phytic acid 1.5, morpholine 3.5, methacrylic acid-2-hydroxy methacrylate 3.5, ethanol 14；Preparation method is by Silane coupling reagent KH-570, phytic acid, ethanol mixing, is heated to 65 DEG C, after stirring 25 minutes, adds other residual components, be warming up to 84 DEG C, stirs 34 minutes, to obtain final product.
The preparation method of the water base silicon chip cleaning liquid of described photoresist, comprise the following steps: by deionized water, triethanolamine, tetrahydrofurfuryl alcohol, BTA, dodecylbenzene sodium sulfonate, sodium benzoate, sodium molybdate, ethanol mixing, under stirring at 1100 revs/min, it is heated to 65 DEG C with the speed of 7 DEG C/minute, add other residual componentss, continue stirring 18 minutes, to obtain final product.
The water base silicon chip cleaning liquid of this photoresist is for cleaning the silicon chip with photoresist, and clean rate is 99%, and clean silicon chip surface will not remain insoluble matter, does not produce new pollution, does not affect the quality of product, and the silicon chip surface after cleaning is clean, and color and luster is consistent, without piebaldism.
Claims (2)
1. the water base silicon chip cleaning liquid of photoresist, it is characterised in that be prepared by the raw materials in: triethanolamine 2-3, tetrahydrofurfuryl alcohol 4-5, BTA 1-2, dodecylbenzene sodium sulfonate 2-3, sodium benzoate 2-3, sodium molybdate 1-2, ethanol 30-40, auxiliary agent 4-5, deionized water 100-120；
Described auxiliary agent is prepared by the raw materials in: Silane coupling reagent KH-570 2-3, antioxidant 1035
1-2, phytic acid 1-2, morpholine 3-4, methacrylic acid-2-hydroxy methacrylate 3-4, ethanol 12-15；Preparation method is by Silane coupling reagent KH-570, phytic acid, ethanol mixing, is heated to 60-70 DEG C, after stirring 20-30 minute, adds other residual components, be warming up to 80-85 DEG C, stirs 30-40 minute, to obtain final product.
The preparation method of the water base silicon chip cleaning liquid of photoresist the most according to claim 1, it is characterized in that comprising the following steps: by deionized water, triethanolamine, tetrahydrofurfuryl alcohol, BTA, dodecylbenzene sodium sulfonate, sodium benzoate, sodium molybdate, ethanol mixing, under stirring at 1000-1200 rev/min, it is heated to 60-70 DEG C with the speed of 6-8 DEG C/minute, add described auxiliary agent, continue stirring 15-20 minute, to obtain final product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310527927.6A CN103605270B (en) | 2013-10-31 | 2013-10-31 | A kind of water base silicon chip cleaning liquid of photoresist and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310527927.6A CN103605270B (en) | 2013-10-31 | 2013-10-31 | A kind of water base silicon chip cleaning liquid of photoresist and preparation method thereof |
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| CN103605270A CN103605270A (en) | 2014-02-26 |
| CN103605270B true CN103605270B (en) | 2016-08-17 |
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| CN201310527927.6A Active CN103605270B (en) | 2013-10-31 | 2013-10-31 | A kind of water base silicon chip cleaning liquid of photoresist and preparation method thereof |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105116696A (en) * | 2015-10-10 | 2015-12-02 | 蓝思科技（长沙）有限公司 | Photoresist stripper and application thereof |
| CN105349037A (en) * | 2015-12-03 | 2016-02-24 | 苏州鑫德杰电子有限公司 | Environmental-friendly water-based stripping agent and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101611130A (en) * | 2007-02-14 | 2009-12-23 | 马林克罗特贝克公司 | Be used to remove the preparation of etch residue based on peroxide activated oxometallate |
| CN101685274A (en) * | 2008-09-26 | 2010-03-31 | 安集微电子（上海）有限公司 | Cleaning agent for thick-film photoresist |
| CN102096345A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Thick-film photoresist cleaning solution and cleaning method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7579308B2 (en) * | 1998-07-06 | 2009-08-25 | Ekc/Dupont Electronics Technologies | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| US7655608B2 (en) * | 2007-08-03 | 2010-02-02 | Dynaloy, Llc | Reduced metal etch rates using stripper solutions containing a copper salt |
| WO2009085072A1 (en) * | 2007-12-31 | 2009-07-09 | Ekc Technology, Inc | Composition comprising chelating agents containing amidoxime compounds |
| KR20120036604A (en) * | 2010-10-08 | 2012-04-18 | 동우 화인켐 주식회사 | Composition for removing a negative photoresist residue and cleaning method using the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101611130A (en) * | 2007-02-14 | 2009-12-23 | 马林克罗特贝克公司 | Be used to remove the preparation of etch residue based on peroxide activated oxometallate |
| CN101685274A (en) * | 2008-09-26 | 2010-03-31 | 安集微电子（上海）有限公司 | Cleaning agent for thick-film photoresist |
| CN102096345A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Thick-film photoresist cleaning solution and cleaning method thereof |
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| CN103605270A (en) | 2014-02-26 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Photoresist water-base silicon chip cleaning fluid and preparation method thereof Effective date of registration: 20180207 Granted publication date: 20160817 Pledgee: Hefei state control construction finance Company limited by guarantee Pledgor: Chinaland Solar Energy Co., Ltd. Registration number: 2018340000047 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20190328 Granted publication date: 20160817 Pledgee: Hefei state control construction finance Company limited by guarantee Pledgor: Chinaland Solar Energy Co., Ltd. Registration number: 2018340000047 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right |