CN103571640A - Water-based LED (Light-Emitting Diode) chip cleaning agent and preparation method thereof - Google Patents

Water-based LED (Light-Emitting Diode) chip cleaning agent and preparation method thereof Download PDF

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Publication number
CN103571640A
CN103571640A CN201310527309.1A CN201310527309A CN103571640A CN 103571640 A CN103571640 A CN 103571640A CN 201310527309 A CN201310527309 A CN 201310527309A CN 103571640 A CN103571640 A CN 103571640A
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China
Prior art keywords
parts
water
chip
cleaning agent
based led
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Pending
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CN201310527309.1A
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Chinese (zh)
Inventor
郭万东
孟祥法
董培才
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Chinaland Solar Energy Co Ltd
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Chinaland Solar Energy Co Ltd
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Priority to CN201310527309.1A priority Critical patent/CN103571640A/en
Publication of CN103571640A publication Critical patent/CN103571640A/en
Pending legal-status Critical Current

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Abstract

The invention relates to a water-based LED (Light-Emitting Diode) chip cleaning agent. The water-based LED chip cleaning agent is prepared from the following raw materials in parts by weight: 3-4 parts of heterogeneous fatty alcohol polyoxyethylene ether, 1-2 parts of monostearate glyceride, 2-3 parts of sodium salicylate, 20-25 parts of propanediol, 10-12 parts of 1, 3-dioxolane, 3-4 parts of rosin, 30-35 parts of ethyl alcohol, 6-8 parts of tert-butyl-4-hydroxy anisole, 4-5 parts of tripropylene glycol methyl ether, 4-5 parts of additive and 100-120 parts of deionized water. By adopting the water-based LED chip cleaning agent, as a nonionic surfactant is used, the water-based LED chip cleaning agent is good in the synergistic effect and has rapid cleaning ability to organic matters, metal ions, particles and the like, new ionic soil can not be generated, and a chip is not corroded; as the loss is less, the cost is lowered, and the time is saved, the chip yield is greatly increased; as the additive can be used for forming a protective film on the surface of the chip, air is isolated, water and other molecules in the atmosphere are prevented from corroding the chip, and the additive can be used for resisting oxidation and is convenient for a next manufacturing process.

Description

A kind of water base LED chip clean-out system and preparation method thereof
Technical field
The present invention relates to clean-out system field, relate in particular to a kind of water base LED chip clean-out system and preparation method thereof.
Background technology
The industry Wafer Cleanings such as silicon slice detergent is widely used in photovoltaic, electronics; Because silicon chip can pollute to some extent in transportation, surface cleanliness is not very high, the corrosion and the etching that are about to carry out is had a huge impact, so first will carry out a series of cleaning operation to silicon chip surface.First the general thinking of cleaning is to remove surperficial organic contaminations, and dissolved oxygen film then, because zone of oxidation is " contamination fall into into ", can cause epitaxy defect; Remove again particle, metal etc., make the surface passivation of silicon chip simultaneously.
Current most silicon slice detergent adopts a liquid and No. three liquid in RAC cleaning, but the aobvious alkalescence of liquid may cause silicon face coarse, strictly control temperature, concentration and time; No. three liquid is aobvious acid, has severe corrosive, also unfavorable to HUMAN HEALTH, production cost is high, irritant smell, contaminate environment, therefore require further improvement formula, with reach clean thorough, pollution-free, corrode little, to HUMAN HEALTH, circuit safety, the object that reduces costs.
Summary of the invention
The object of the present invention is to provide a kind of water base LED chip clean-out system and preparation method thereof, this clean-out system has clean thorough, high, the non-corrosive advantage of cleaning efficiency.
Technical scheme of the present invention is as follows:
A kind of water base LED chip clean-out system, it is characterized in that being made by the raw material of following weight part: isomery fatty alcohol-polyoxyethylene ether 3-4, single stearic acid glycerine lipoprotein 1-2, sodium salicylate 2-3, propylene glycol 20-25, DOX 10-12, rosin 3-4, ethanol 30-35, tertiary butyl-4-hydroxy methyl-phenoxide 6-8, tripropylene glycol methyl ether 4-5, auxiliary agent 4-5, deionized water 100-120;
Described auxiliary agent is made by the raw material of following weight part: Silane coupling reagent KH-570 2-3, oxidation inhibitor 1035 1-2, phytic acid 1-2, morpholine 3-4, methacrylic acid-2-hydroxy methacrylate 3-4, ethanol 12-15; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 60-70 ℃, stirs after 20-30 minute, then adds other remaining component, is warming up to 80-85 ℃, stirs 30-40 minute, obtains.
The preparation method of described water base LED chip clean-out system, it is characterized in that comprising the following steps: by deionized water, isomery fatty alcohol-polyoxyethylene ether, single stearic acid glycerine lipoprotein, sodium salicylate, propylene glycol, 1,3-dioxolane, rosin, ethanol, tertiary butyl-4-hydroxy methyl-phenoxide, tripropylene glycol methyl ether mix, under 1000-1200 rev/min of stirring, speed with 6-8 ℃/minute is heated to 60-70 ℃, add other remaining components, continue to stir 15-20 minute, obtain.
Beneficial effect of the present invention
Clean-out system of the present invention is used nonionogenic tenside, and synergistic effect is good, and organism, metal ion, particle etc. are had to the ability of removing fast, does not produce new ionic soil, corrosion-free to chip; Loss still less, reduces costs, thereby save time, has improved greatly the yield rate of chip.Auxiliary agent of the present invention can form protective membrane at chip surface, and isolated air prevents water and other molecules corrosion chip in atmosphere, anti-oxidant, facilitates next step manufacture craft to carry out.
Embodiment
A kind of water base LED chip clean-out system, by following weight part (kilogram) raw material make: isomery fatty alcohol-polyoxyethylene ether 3.5, single stearic acid glycerine lipoprotein 1.5, sodium salicylate 2.5, propylene glycol 23, DOX 11, rosin 3.5, ethanol 32, tertiary butyl-4-hydroxy methyl-phenoxide 7, tripropylene glycol methyl ether 4.5, auxiliary agent 4.5, deionized water 110;
Described auxiliary agent by following weight part (kilogram) raw material make: Silane coupling reagent KH-570 2.5, oxidation inhibitor 1,035 1.5, phytic acid 1.5, morpholine 3.5, methacrylic acid-2-hydroxy methacrylate 3.5, ethanol 14; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 65 ℃, stirs after 25 minutes, then adds other remaining component, is warming up to 84 ℃, stirs 34 minutes, obtains.
The preparation method of described water base LED chip clean-out system, comprise the following steps: by deionized water, isomery fatty alcohol-polyoxyethylene ether, single stearic acid glycerine lipoprotein, sodium salicylate, propylene glycol, 1,3-dioxolane, rosin, ethanol, tertiary butyl-4-hydroxy methyl-phenoxide, tripropylene glycol methyl ether mix, under 1100 revs/min of stirrings, with the speed of 7 ℃/minute, be heated to 65 ℃, add other remaining components, continue to stir 17 minutes, obtain.
This water base LED chip clean-out system is used for cleaning LED lamp chip, and clean rate is 99.5%, can residual insolubles to cleaning silicon chip surface, do not produce new pollution, and do not affect the quality of product, the silicon chip surface after cleaning is clean, and color and luster is consistent, without piebald.

Claims (2)

1. a water base LED chip clean-out system, it is characterized in that being made by the raw material of following weight part: isomery fatty alcohol-polyoxyethylene ether 3-4, single stearic acid glycerine lipoprotein 1-2, sodium salicylate 2-3, propylene glycol 20-25, DOX 10-12, rosin 3-4, ethanol 30-35, tertiary butyl-4-hydroxy methyl-phenoxide 6-8, tripropylene glycol methyl ether 4-5, auxiliary agent 4-5, deionized water 100-120;
Described auxiliary agent is made by the raw material of following weight part: Silane coupling reagent KH-570 2-3, oxidation inhibitor 1035 1-2, phytic acid 1-2, morpholine 3-4, methacrylic acid-2-hydroxy methacrylate 3-4, ethanol 12-15; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 60-70 ℃, stirs after 20-30 minute, then adds other remaining component, is warming up to 80-85 ℃, stirs 30-40 minute, obtains.
2. the preparation method of water base LED chip clean-out system according to claim 1, it is characterized in that comprising the following steps: by deionized water, isomery fatty alcohol-polyoxyethylene ether, single stearic acid glycerine lipoprotein, sodium salicylate, propylene glycol, 1,3-dioxolane, rosin, ethanol, tertiary butyl-4-hydroxy methyl-phenoxide, tripropylene glycol methyl ether mix, under 1000-1200 rev/min of stirring, speed with 6-8 ℃/minute is heated to 60-70 ℃, add other remaining components, continue to stir 15-20 minute, obtain.
CN201310527309.1A 2013-10-31 2013-10-31 Water-based LED (Light-Emitting Diode) chip cleaning agent and preparation method thereof Pending CN103571640A (en)

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CN201310527309.1A CN103571640A (en) 2013-10-31 2013-10-31 Water-based LED (Light-Emitting Diode) chip cleaning agent and preparation method thereof

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106085578A (en) * 2016-06-15 2016-11-09 安徽有通玻璃有限公司 A kind of cooling liquid for glass finishing
CN106085622A (en) * 2016-05-31 2016-11-09 安徽福恩光电科技有限公司 A kind of LED chip cleanout fluid
CN106350296A (en) * 2016-08-25 2017-01-25 大连奥首科技有限公司 High-efficiency environment-friendly LED chip cleaning agent and application method

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000011091A1 (en) * 1998-08-18 2000-03-02 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
CN101265441A (en) * 2008-05-09 2008-09-17 大连三达奥克化学股份有限公司 Polycrystal silicon chip water-base cleaning agent
CN102010796A (en) * 2010-12-25 2011-04-13 江西旭阳雷迪高科技股份有限公司 Cleaning liquid for solar polycrystalline silicon wafer
WO2011142362A1 (en) * 2010-05-11 2011-11-17 日産化学工業株式会社 Silicon-wafer polishing composition and silicon-wafer polishing method
CN102304444A (en) * 2011-08-01 2012-01-04 合肥华清金属表面处理有限责任公司 Environmental-protection water-base cleaning agent for solar-grade silicon wafers
CN102977774A (en) * 2012-12-04 2013-03-20 安徽省宿州市龙华机械制造有限公司 Modified silane surface pretreating agent containing polyoxyethylene octadecanol ether and preparation method of modified silane surface pretreating agent
CN102993943A (en) * 2012-12-04 2013-03-27 安徽省宿州市龙华机械制造有限公司 Modified silanized metal surface pre-treating agent containing octylphenol polyoxyethylene ether and preparation method thereof
CN103214886A (en) * 2013-02-04 2013-07-24 安徽省繁昌县皖南阀门铸造有限公司 Metal rust-preventive oil comprising butyl acrylate
CN103215595A (en) * 2013-02-04 2013-07-24 安徽省繁昌县皖南阀门铸造有限公司 Metal rust-preventive oil comprising sorbitan monooleate
CN103215597A (en) * 2013-02-04 2013-07-24 安徽省繁昌县皖南阀门铸造有限公司 Metal rust-preventive oil comprising peregal

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000011091A1 (en) * 1998-08-18 2000-03-02 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
CN101265441A (en) * 2008-05-09 2008-09-17 大连三达奥克化学股份有限公司 Polycrystal silicon chip water-base cleaning agent
WO2011142362A1 (en) * 2010-05-11 2011-11-17 日産化学工業株式会社 Silicon-wafer polishing composition and silicon-wafer polishing method
CN102010796A (en) * 2010-12-25 2011-04-13 江西旭阳雷迪高科技股份有限公司 Cleaning liquid for solar polycrystalline silicon wafer
CN102304444A (en) * 2011-08-01 2012-01-04 合肥华清金属表面处理有限责任公司 Environmental-protection water-base cleaning agent for solar-grade silicon wafers
CN102977774A (en) * 2012-12-04 2013-03-20 安徽省宿州市龙华机械制造有限公司 Modified silane surface pretreating agent containing polyoxyethylene octadecanol ether and preparation method of modified silane surface pretreating agent
CN102993943A (en) * 2012-12-04 2013-03-27 安徽省宿州市龙华机械制造有限公司 Modified silanized metal surface pre-treating agent containing octylphenol polyoxyethylene ether and preparation method thereof
CN103214886A (en) * 2013-02-04 2013-07-24 安徽省繁昌县皖南阀门铸造有限公司 Metal rust-preventive oil comprising butyl acrylate
CN103215595A (en) * 2013-02-04 2013-07-24 安徽省繁昌县皖南阀门铸造有限公司 Metal rust-preventive oil comprising sorbitan monooleate
CN103215597A (en) * 2013-02-04 2013-07-24 安徽省繁昌县皖南阀门铸造有限公司 Metal rust-preventive oil comprising peregal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106085622A (en) * 2016-05-31 2016-11-09 安徽福恩光电科技有限公司 A kind of LED chip cleanout fluid
CN106085578A (en) * 2016-06-15 2016-11-09 安徽有通玻璃有限公司 A kind of cooling liquid for glass finishing
CN106350296A (en) * 2016-08-25 2017-01-25 大连奥首科技有限公司 High-efficiency environment-friendly LED chip cleaning agent and application method
CN106350296B (en) * 2016-08-25 2018-10-23 大连奥首科技有限公司 A kind of high-efficiency environment friendly LED core chip detergent and application method

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Application publication date: 20140212