CN103589525A - Semiconductor silicon wafer cleaning agent for removal of black wax, rosin and paraffin mixtures and preparation method thereof - Google Patents
Semiconductor silicon wafer cleaning agent for removal of black wax, rosin and paraffin mixtures and preparation method thereof Download PDFInfo
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- CN103589525A CN103589525A CN201310527795.7A CN201310527795A CN103589525A CN 103589525 A CN103589525 A CN 103589525A CN 201310527795 A CN201310527795 A CN 201310527795A CN 103589525 A CN103589525 A CN 103589525A
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Abstract
A semiconductor silicon wafer cleaning agent for removal of black wax, rosin and paraffin mixtures comprises the following raw materials: by weight, 2-3 parts of nonylphenol polyoxyethylene ether, 3-4 parts of fatty alcohol polyoxyethylene ether, 1-2 parts of sodium dodecyl alcoholamide phosphate, 2-3 parts of sodium tripolyphosphate, 5-6 parts of dodecylphenol polyoxyethylene ether, 2-3 parts of sodium dodecyl benzene sulfonate, 30-40 parts of ethanol, 4-5 parts of an auxiliary agent and 100-120 parts of deionized water. The semiconductor silicon wafer cleaning agent mainly uses non-ionic and other a plurality of surfactants for forming an emulsion with the water, has good dissolving capacity to the black wax, paraffin, the rosin, lipids and the like, and also has an excellent cleaning ability to inorganic matter particles, metal ions and the like; the cleaning agent is non-toxic and non corrosive, has no pollution to the environment, and can reduce the cleaning cost. The auxiliary agent of the cleaning agent can form a protective film on the surface of a circuit board for isolating air to prevent water and other molecules in the atmosphere from corroding the circuit board, is anti-oxidizing, and facilitates performing of a next-step manufacture process.
Description
Technical field
The present invention relates to clean-out system field, relate in particular to a kind of semiconductor silicon chip detergent of removing black wax, rosin and mineral wax mixture and preparation method thereof.
Background technology
The industry Wafer Cleanings such as silicon slice detergent is widely used in photovoltaic, electronics; Because silicon chip can pollute to some extent in transportation, surface cleanliness is not very high, the corrosion and the etching that are about to carry out is had a huge impact, so first will carry out a series of cleaning operation to silicon chip surface.First the general thinking of cleaning is to remove surperficial organic contaminations, and dissolved oxygen film then, because zone of oxidation is " contamination fall into into ", can cause epitaxy defect; Remove again particle, metal etc., make the surface passivation of silicon chip simultaneously.
Current most silicon slice detergent adopts a liquid and No. three liquid in RAC cleaning, but the aobvious alkalescence of liquid may cause silicon face coarse, strictly control temperature, concentration and time; No. three liquid is aobvious acid, has severe corrosive, also unfavorable to HUMAN HEALTH, production cost is high, irritant smell, contaminate environment, therefore require further improvement formula, with reach clean thorough, pollution-free, corrode little, to HUMAN HEALTH, circuit safety, the object that reduces costs.
Summary of the invention
The object of the present invention is to provide a kind of semiconductor silicon chip detergent of removing black wax, rosin and mineral wax mixture and preparation method thereof, this clean-out system have advantages of clean thoroughly, cleaning speed is fast.
Technical scheme of the present invention is as follows:
A semiconductor silicon chip detergent for black wax, rosin and mineral wax mixture, is characterized in that being made by the raw material of following weight part: polyoxyethylene nonylphenol ether 2-3, fatty alcohol-polyoxyethylene ether 3-4, dodecanolyacylamine phosphoric acid fat sodium 1-2, tripoly phosphate sodium STPP 2-3, dodecyl phenol polyethenoxy ether 5-6, Sodium dodecylbenzene sulfonate 2-3, ethanol 30-40, auxiliary agent 4-5, deionized water 100-120;
Described auxiliary agent is made by the raw material of following weight part: Silane coupling reagent KH-570 2-3, oxidation inhibitor 1035 1-2, phytic acid 1-2, morpholine 3-4, methacrylic acid-2-hydroxy methacrylate 3-4, ethanol 12-15; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 60-70 ℃, stirs after 20-30 minute, then adds other remaining component, is warming up to 80-85 ℃, stirs 30-40 minute, obtains.
The preparation method of the semiconductor silicon chip detergent of described removal black wax, rosin and mineral wax mixture, it is characterized in that comprising the following steps: deionized water, polyoxyethylene nonylphenol ether, fatty alcohol-polyoxyethylene ether, dodecanolyacylamine phosphoric acid fat sodium, tripoly phosphate sodium STPP, dodecyl phenol polyethenoxy ether, Sodium dodecylbenzene sulfonate, ethanol are mixed, under 1000-1200 rev/min of stirring, speed with 6-8 ℃/minute is heated to 60-70 ℃, add other remaining components, continue to stir 15-20 minute, obtain.
Beneficial effect of the present invention
Clean-out system of the present invention is mainly used the kinds of surface promoting agents such as nonionic, forms emulsion with water, and black wax, paraffin, rosin, lipid etc. are had to excellent dissolving power, and particles of inorganic material, metal ion etc. is also had to excellent cleansing power, and cleaning performance is good; The nontoxic non-corrosiveness of this clean-out system, free from environmental pollution, and can reduce cleaning cost.Auxiliary agent of the present invention can form protective membrane at circuit board surface, and isolated air, prevents water and other molecule open circuit potential plates in atmosphere, anti-oxidant, facilitates next step manufacture craft to carry out.
Embodiment
A semiconductor silicon chip detergent for black wax, rosin and mineral wax mixture, by following weight part (kilogram) raw material make: polyoxyethylene nonylphenol ether 2.5, fatty alcohol-polyoxyethylene ether 3.5, dodecanolyacylamine phosphoric acid fat sodium 1.5, tripoly phosphate sodium STPP 2.5, dodecyl phenol polyethenoxy ether 6, Sodium dodecylbenzene sulfonate 2.5, ethanol 36, auxiliary agent 4.5, deionized water 110;
Described auxiliary agent by following weight part (kilogram) raw material make: Silane coupling reagent KH-570 2.5, oxidation inhibitor 1,035 1.5, phytic acid 1.5, morpholine 3.5, methacrylic acid-2-hydroxy methacrylate 3.5, ethanol 14; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 65 ℃, stirs after 25 minutes, then adds other remaining component, is warming up to 84 ℃, stirs 34 minutes, obtains.
The preparation method of the semiconductor silicon chip detergent of described removal black wax, rosin and mineral wax mixture, comprise the following steps: deionized water, polyoxyethylene nonylphenol ether, fatty alcohol-polyoxyethylene ether, dodecanolyacylamine phosphoric acid fat sodium, tripoly phosphate sodium STPP, dodecyl phenol polyethenoxy ether, Sodium dodecylbenzene sulfonate, ethanol are mixed, under 1100 revs/min of stirrings, with the speed of 7 ℃/minute, be heated to 65 ℃, add other remaining components, continue to stir 17 minutes, obtain.
This semiconductor silicon chip detergent of removing black wax, rosin and mineral wax mixture is for cleaning silicon chip, and clean rate is 99.3%, can residual insolubles to cleaning silicon chip surface, do not produce new pollution, do not affect the quality of product, the silicon chip surface after cleaning is clean, color and luster is consistent, without piebald.
Claims (2)
1. remove a semiconductor silicon chip detergent for black wax, rosin and mineral wax mixture, it is characterized in that being made by the raw material of following weight part: polyoxyethylene nonylphenol ether 2-3, fatty alcohol-polyoxyethylene ether 3-4, dodecanolyacylamine phosphoric acid fat sodium 1-2, tripoly phosphate sodium STPP 2-3, dodecyl phenol polyethenoxy ether 5-6, Sodium dodecylbenzene sulfonate 2-3, ethanol 30-40, auxiliary agent 4-5, deionized water 100-120;
Described auxiliary agent is made by the raw material of following weight part: Silane coupling reagent KH-570 2-3, oxidation inhibitor 1035 1-2, phytic acid 1-2, morpholine 3-4, methacrylic acid-2-hydroxy methacrylate 3-4, ethanol 12-15; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 60-70 ℃, stirs after 20-30 minute, then adds other remaining component, is warming up to 80-85 ℃, stirs 30-40 minute, obtains.
2. remove according to claim 1 the preparation method of the semiconductor silicon chip detergent of black wax, rosin and mineral wax mixture, it is characterized in that comprising the following steps: deionized water, polyoxyethylene nonylphenol ether, fatty alcohol-polyoxyethylene ether, dodecanolyacylamine phosphoric acid fat sodium, tripoly phosphate sodium STPP, dodecyl phenol polyethenoxy ether, Sodium dodecylbenzene sulfonate, ethanol are mixed, under 1000-1200 rev/min of stirring, speed with 6-8 ℃/minute is heated to 60-70 ℃, add other remaining components, continue to stir 15-20 minute, obtain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310527795.7A CN103589525A (en) | 2013-10-31 | 2013-10-31 | Semiconductor silicon wafer cleaning agent for removal of black wax, rosin and paraffin mixtures and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310527795.7A CN103589525A (en) | 2013-10-31 | 2013-10-31 | Semiconductor silicon wafer cleaning agent for removal of black wax, rosin and paraffin mixtures and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
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| CN103589525A true CN103589525A (en) | 2014-02-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310527795.7A Pending CN103589525A (en) | 2013-10-31 | 2013-10-31 | Semiconductor silicon wafer cleaning agent for removal of black wax, rosin and paraffin mixtures and preparation method thereof |
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| CN (1) | CN103589525A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106497682A (en) * | 2016-10-29 | 2017-03-15 | 常州市鼎升环保科技有限公司 | A kind of preparation method of non-toxic, environmental friendly electronic product abluent |
| CN108831966A (en) * | 2018-07-06 | 2018-11-16 | 安徽腾奎智能科技有限公司 | A kind of cleaning solution for photovoltaic cell board group |
| CN113621443A (en) * | 2021-09-10 | 2021-11-09 | 福建省佑达环保材料有限公司 | Composition for cleaning semiconductor chip solid wax |
Citations (4)
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| CN1124285A (en) * | 1995-11-23 | 1996-06-12 | 山东大学 | Cleaning agent for semiconductor industry |
| WO2000011091A1 (en) * | 1998-08-18 | 2000-03-02 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
| CN102304444A (en) * | 2011-08-01 | 2012-01-04 | 合肥华清金属表面处理有限责任公司 | Environmental-protection water-base cleaning agent for solar-grade silicon wafers |
| CN103214886A (en) * | 2013-02-04 | 2013-07-24 | 安徽省繁昌县皖南阀门铸造有限公司 | Metal rust-preventive oil comprising butyl acrylate |
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2013
- 2013-10-31 CN CN201310527795.7A patent/CN103589525A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1124285A (en) * | 1995-11-23 | 1996-06-12 | 山东大学 | Cleaning agent for semiconductor industry |
| WO2000011091A1 (en) * | 1998-08-18 | 2000-03-02 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
| CN102304444A (en) * | 2011-08-01 | 2012-01-04 | 合肥华清金属表面处理有限责任公司 | Environmental-protection water-base cleaning agent for solar-grade silicon wafers |
| CN103214886A (en) * | 2013-02-04 | 2013-07-24 | 安徽省繁昌县皖南阀门铸造有限公司 | Metal rust-preventive oil comprising butyl acrylate |
Non-Patent Citations (1)
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| 王守旭 等: ""硅烷偶联剂对多孔硅的稳定化研究"", 《含能材料》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106497682A (en) * | 2016-10-29 | 2017-03-15 | 常州市鼎升环保科技有限公司 | A kind of preparation method of non-toxic, environmental friendly electronic product abluent |
| CN108831966A (en) * | 2018-07-06 | 2018-11-16 | 安徽腾奎智能科技有限公司 | A kind of cleaning solution for photovoltaic cell board group |
| CN113621443A (en) * | 2021-09-10 | 2021-11-09 | 福建省佑达环保材料有限公司 | Composition for cleaning semiconductor chip solid wax |
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Application publication date: 20140219 |
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