CN103571643A - Solar grade silicon wafer water-based cleaning agent and preparation method thereof - Google Patents
Solar grade silicon wafer water-based cleaning agent and preparation method thereof Download PDFInfo
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- CN103571643A CN103571643A CN201310527797.6A CN201310527797A CN103571643A CN 103571643 A CN103571643 A CN 103571643A CN 201310527797 A CN201310527797 A CN 201310527797A CN 103571643 A CN103571643 A CN 103571643A
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Abstract
The invention provides a solar grade silicon wafer water-based cleaning agent. The cleaning agent is prepared from the following raw materials in parts by weight: 2-3 parts of hydrofluoric acid, 1-2 parts of sodium xylene sulfonate, 2-3 parts of nonylphenol polyoxyethylene ether, 1-2 parts of N,N-dimethyldodecylamine-N-oxide, 3-5 parts of polyoxyethylene lauryl ether, 6-8 parts of dichlorotetrafluoromethane, 9-12 parts of propylene glycol, 30-40 parts of ethanol, 4-5 parts of auxiliary and 100-120 parts of deionized water. The cleaning agent has the beneficial effects that the cleaning agent can not only effectively remove organic and inorganic pollutants on the surfaces of silicon wafers but also remove metal and nonmetal particles attached to the surfaces of the silicon wafers, thus improving the high quality rates and efficiency of solar cells; the cleaning agent has a simple cleaning solution formula, and good cleaning effects, and the cleaning time is short, the cleaning method is simple, low in cleaning temperature is low; the auxiliary can form a protective film on the surface of a circuit board to isolate air to prevent water and other molecules in the atmosphere from corroding the circuit board; and the cleaning agent is resistant to oxidation and is convenient for operation of the next preparation process.
Description
Technical field
The present invention relates to clean-out system field, relate in particular to a kind of solar energy level silicon chip water-base cleaning agent and preparation method thereof.
Background technology
The industry Wafer Cleanings such as silicon slice detergent is widely used in photovoltaic, electronics; Because silicon chip can pollute to some extent in transportation, surface cleanliness is not very high, the corrosion and the etching that are about to carry out is had a huge impact, so first will carry out a series of cleaning operation to silicon chip surface.First the general thinking of cleaning is to remove surperficial organic contaminations, and dissolved oxygen film then, because zone of oxidation is " contamination fall into into ", can cause epitaxy defect; Remove again particle, metal etc., make the surface passivation of silicon chip simultaneously.
Current most silicon slice detergent adopts a liquid and No. three liquid in RAC cleaning, but the aobvious alkalescence of liquid may cause silicon face coarse, strictly control temperature, concentration and time; No. three liquid is aobvious acid, has severe corrosive, also unfavorable to HUMAN HEALTH, production cost is high, irritant smell, contaminate environment, therefore require further improvement formula, with reach clean thorough, pollution-free, corrode little, to HUMAN HEALTH, circuit safety, the object that reduces costs.
Summary of the invention
The object of the present invention is to provide a kind of solar energy level silicon chip water-base cleaning agent and preparation method thereof, this clean-out system have clean thoroughly, cleaning speed is fast, clean simple advantage.
Technical scheme of the present invention is as follows:
A chip water-base cleaning agent, is characterized in that being made by the raw material of following weight part: hydrofluoric acid 2-3, sodium xylene sulfonate 1-2, polyoxyethylene nonylphenol ether 2-3, dimethyl dodecyl amine oxide 1-2, ethoxylated dodecyl alcohol 3-5, Dichlorotetrafluoromethane 6-8, propylene glycol 9-12, ethanol 30-40, auxiliary agent 4-5, deionized water 100-120;
Described auxiliary agent is made by the raw material of following weight part: Silane coupling reagent KH-570 2-3, oxidation inhibitor 1035 1-2, phytic acid 1-2, morpholine 3-4, methacrylic acid-2-hydroxy methacrylate 3-4, ethanol 12-15; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 60-70 ℃, stirs after 20-30 minute, then adds other remaining component, is warming up to 80-85 ℃, stirs 30-40 minute, obtains.
The preparation method of described solar energy level silicon chip water-base cleaning agent, it is characterized in that comprising the following steps: deionized water, hydrofluoric acid, sodium xylene sulfonate, polyoxyethylene nonylphenol ether, dimethyl dodecyl amine oxide, ethoxylated dodecyl alcohol, propylene glycol, ethanol are mixed, under 1000-1200 rev/min of stirring, speed with 6-8 ℃/minute is heated to 60-70 ℃, add other remaining components, continue to stir 15-20 minute, obtain.
Beneficial effect of the present invention
The present invention not only can effectively remove the organic and inorganic pollution of silicon chip surface, and can remove metal, the non-metallic particle that is attached to silicon chip surface, thereby has improved the factor of merit and the efficiency of solar battery sheet.Scavenging solution formula of the present invention is simple, and cleaning performance is good, and purging method is simple, and scavenging period is short, and the temperature that cleaning needs is not high.Auxiliary agent of the present invention can form protective membrane at circuit board surface, and isolated air, prevents water and other molecule open circuit potential plates in atmosphere, anti-oxidant, facilitates next step manufacture craft to carry out.
Embodiment
, by following weight part (kilogram) raw material make: hydrofluoric acid 2.5, sodium xylene sulfonate 1.5, polyoxyethylene nonylphenol ether 2.5, dimethyl dodecyl amine oxide 1.6, ethoxylated dodecyl alcohol 4, Dichlorotetrafluoromethane 7, propylene glycol 11, ethanol 36, auxiliary agent 4.5, deionized water 110;
Described auxiliary agent by following weight part (kilogram) raw material make: Silane coupling reagent KH-570 2.5, oxidation inhibitor 1,035 1.5, phytic acid 1.5, morpholine 3.5, methacrylic acid-2-hydroxy methacrylate 3.5, ethanol 14; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 65 ℃, stirs after 25 minutes, then adds other remaining component, is warming up to 84 ℃, stirs 34 minutes, obtains.
The preparation method of described solar energy level silicon chip water-base cleaning agent, comprise the following steps: deionized water, hydrofluoric acid, sodium xylene sulfonate, polyoxyethylene nonylphenol ether, dimethyl dodecyl amine oxide, ethoxylated dodecyl alcohol, propylene glycol, ethanol are mixed, under 1100 revs/min of stirrings, with the speed of 7 ℃/minute, be heated to 65 ℃, add other remaining components, continue to stir 17 minutes, obtain.
This solar energy level silicon chip water-base cleaning agent is for cleaning solar energy cell silicon chip, and clean rate is 99.2%, can residual insolubles to cleaning silicon chip surface, do not produce new pollution, and do not affect the quality of product, the silicon chip surface after cleaning is clean, and color and luster is consistent, without piebald.
Claims (2)
1. a solar energy level silicon chip water-base cleaning agent, is characterized in that being made by the raw material of following weight part: hydrofluoric acid 2-3, sodium xylene sulfonate 1-2, polyoxyethylene nonylphenol ether 2-3, dimethyl dodecyl amine oxide 1-2, ethoxylated dodecyl alcohol 3-5, Dichlorotetrafluoromethane 6-8, propylene glycol 9-12, ethanol 30-40, auxiliary agent 4-5, deionized water 100-120;
Described auxiliary agent is made by the raw material of following weight part: Silane coupling reagent KH-570 2-3, oxidation inhibitor 1035 1-2, phytic acid 1-2, morpholine 3-4, methacrylic acid-2-hydroxy methacrylate 3-4, ethanol 12-15; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 60-70 ℃, stirs after 20-30 minute, then adds other remaining component, is warming up to 80-85 ℃, stirs 30-40 minute, obtains.
2. the preparation method of solar energy level silicon chip water-base cleaning agent according to claim 1, it is characterized in that comprising the following steps: deionized water, hydrofluoric acid, sodium xylene sulfonate, polyoxyethylene nonylphenol ether, dimethyl dodecyl amine oxide, ethoxylated dodecyl alcohol, propylene glycol, ethanol are mixed, under 1000-1200 rev/min of stirring, speed with 6-8 ℃/minute is heated to 60-70 ℃, add other remaining components, continue to stir 15-20 minute, obtain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310527797.6A CN103571643A (en) | 2013-10-31 | 2013-10-31 | Solar grade silicon wafer water-based cleaning agent and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310527797.6A CN103571643A (en) | 2013-10-31 | 2013-10-31 | Solar grade silicon wafer water-based cleaning agent and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
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| CN103571643A true CN103571643A (en) | 2014-02-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310527797.6A Pending CN103571643A (en) | 2013-10-31 | 2013-10-31 | Solar grade silicon wafer water-based cleaning agent and preparation method thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101724513A (en) * | 2008-10-18 | 2010-06-09 | 陈维生 | Electronic appliance cleanser |
| CN103215595A (en) * | 2013-02-04 | 2013-07-24 | 安徽省繁昌县皖南阀门铸造有限公司 | Metal rust-preventive oil comprising sorbitan monooleate |
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2013
- 2013-10-31 CN CN201310527797.6A patent/CN103571643A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101724513A (en) * | 2008-10-18 | 2010-06-09 | 陈维生 | Electronic appliance cleanser |
| CN103215595A (en) * | 2013-02-04 | 2013-07-24 | 安徽省繁昌县皖南阀门铸造有限公司 | Metal rust-preventive oil comprising sorbitan monooleate |
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| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140212 |
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| RJ01 | Rejection of invention patent application after publication |