CN103928479B - 固态成像设备及其制造方法 - Google Patents
固态成像设备及其制造方法 Download PDFInfo
- Publication number
- CN103928479B CN103928479B CN201410013400.6A CN201410013400A CN103928479B CN 103928479 B CN103928479 B CN 103928479B CN 201410013400 A CN201410013400 A CN 201410013400A CN 103928479 B CN103928479 B CN 103928479B
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- China
- Prior art keywords
- solid
- color filters
- state imaging
- imaging device
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- 238000003384 imaging method Methods 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- 238000000034 method Methods 0.000 title description 8
- 230000002093 peripheral effect Effects 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims description 2
- 230000002265 prevention Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 36
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 5
- 230000035939 shock Effects 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-005697 | 2013-01-06 | ||
| JP2013005697A JP6103947B2 (ja) | 2013-01-16 | 2013-01-16 | 固体撮像装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103928479A CN103928479A (zh) | 2014-07-16 |
| CN103928479B true CN103928479B (zh) | 2017-01-04 |
Family
ID=51060369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410013400.6A Active CN103928479B (zh) | 2013-01-16 | 2014-01-13 | 固态成像设备及其制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9305965B2 (enExample) |
| JP (1) | JP6103947B2 (enExample) |
| CN (1) | CN103928479B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016152322A (ja) * | 2015-02-18 | 2016-08-22 | 株式会社東芝 | 固体撮像装置 |
| JP6818468B2 (ja) | 2016-08-25 | 2021-01-20 | キヤノン株式会社 | 光電変換装置及びカメラ |
| JP2018060921A (ja) | 2016-10-05 | 2018-04-12 | キヤノン株式会社 | 光電変換装置及びシステム |
| JP6906786B2 (ja) | 2017-03-27 | 2021-07-21 | 株式会社日立ハイテクサイエンス | 試料保持具、部材装着用器具、および荷電粒子ビーム装置 |
| KR102506837B1 (ko) | 2017-11-20 | 2023-03-06 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| JP2020031136A (ja) | 2018-08-22 | 2020-02-27 | キヤノン株式会社 | 撮像装置およびカメラ |
| JP2022083419A (ja) | 2020-11-24 | 2022-06-03 | 三星電子株式会社 | イメージセンサ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1794463A (zh) * | 2004-12-24 | 2006-06-28 | 东部亚南半导体株式会社 | Cmos图像传感器及其制造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01100461A (ja) | 1987-10-14 | 1989-04-18 | Fujikura Ltd | 圧電型加速度センサ |
| JP2005340299A (ja) * | 2004-05-24 | 2005-12-08 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法並びにカメラ |
| US7078779B2 (en) * | 2004-10-15 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd | Enhanced color image sensor device and method of making the same |
| US7265328B2 (en) * | 2005-08-22 | 2007-09-04 | Micron Technology, Inc. | Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled spaced slots around a photosensor |
| JP2008010544A (ja) * | 2006-06-28 | 2008-01-17 | Renesas Technology Corp | 固体撮像素子 |
| JP2009111225A (ja) * | 2007-10-31 | 2009-05-21 | Fujifilm Corp | 固体撮像素子及びその製造方法 |
| JP4957564B2 (ja) * | 2008-01-23 | 2012-06-20 | 大日本印刷株式会社 | 固体撮像素子およびそれを用いた撮像装置 |
| JP4835719B2 (ja) | 2008-05-22 | 2011-12-14 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP2010034426A (ja) * | 2008-07-31 | 2010-02-12 | Panasonic Corp | 固体撮像装置およびその製造方法ならびにカメラ |
| JP2010067827A (ja) * | 2008-09-11 | 2010-03-25 | Fujifilm Corp | 固体撮像素子及び撮像装置 |
| JP2010073819A (ja) | 2008-09-17 | 2010-04-02 | Canon Inc | 光電変換装置及び撮像システム |
| JP4741015B2 (ja) * | 2009-03-27 | 2011-08-03 | 富士フイルム株式会社 | 撮像素子 |
| JP2012191136A (ja) * | 2011-03-14 | 2012-10-04 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法、電子機器 |
| US20130293751A1 (en) * | 2012-05-03 | 2013-11-07 | Aptina Imaging Corporation | Imaging systems with separated color filter elements |
-
2013
- 2013-01-16 JP JP2013005697A patent/JP6103947B2/ja active Active
-
2014
- 2014-01-03 US US14/147,279 patent/US9305965B2/en active Active
- 2014-01-13 CN CN201410013400.6A patent/CN103928479B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1794463A (zh) * | 2004-12-24 | 2006-06-28 | 东部亚南半导体株式会社 | Cmos图像传感器及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6103947B2 (ja) | 2017-03-29 |
| CN103928479A (zh) | 2014-07-16 |
| JP2014138071A (ja) | 2014-07-28 |
| US9305965B2 (en) | 2016-04-05 |
| US20140191349A1 (en) | 2014-07-10 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |