CN103917897B - 具有电荷排斥段间隙的辐射敏感探测器设备 - Google Patents

具有电荷排斥段间隙的辐射敏感探测器设备 Download PDF

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Publication number
CN103917897B
CN103917897B CN201280055158.8A CN201280055158A CN103917897B CN 103917897 B CN103917897 B CN 103917897B CN 201280055158 A CN201280055158 A CN 201280055158A CN 103917897 B CN103917897 B CN 103917897B
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China
Prior art keywords
electrode
conversion layer
electrodes
charge collecting
layer
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Expired - Fee Related
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CN201280055158.8A
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English (en)
Chinese (zh)
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CN103917897A (zh
Inventor
K·J·恩格尔
C·赫尔曼
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Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN201280055158.8A 2011-11-09 2012-11-07 具有电荷排斥段间隙的辐射敏感探测器设备 Expired - Fee Related CN103917897B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161557480P 2011-11-09 2011-11-09
US61/557,480 2011-11-09
PCT/IB2012/056231 WO2013068944A1 (en) 2011-11-09 2012-11-07 Radiation-sensitive detector device with charge-rejecting segment gaps

Publications (2)

Publication Number Publication Date
CN103917897A CN103917897A (zh) 2014-07-09
CN103917897B true CN103917897B (zh) 2016-08-17

Family

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CN201280055158.8A Expired - Fee Related CN103917897B (zh) 2011-11-09 2012-11-07 具有电荷排斥段间隙的辐射敏感探测器设备

Country Status (8)

Country Link
US (1) US9069088B2 (enExample)
EP (1) EP2748638B1 (enExample)
JP (1) JP6251683B2 (enExample)
CN (1) CN103917897B (enExample)
BR (1) BR112014010873A8 (enExample)
IN (1) IN2014CN03496A (enExample)
RU (1) RU2605523C2 (enExample)
WO (1) WO2013068944A1 (enExample)

Cited By (1)

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US10641911B2 (en) 2015-12-02 2020-05-05 Shenzhen Xpectvision Technology Co., Ltd. Packaging methods of semiconductor X-ray detectors

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DE102013202630B4 (de) * 2013-02-19 2017-07-06 Siemens Healthcare Gmbh Strahlungsdetektor und medizinisches Diagnosesystem
US10497737B2 (en) * 2013-05-30 2019-12-03 Caeleste Cvba Enhanced dynamic range imaging
DE102014204042A1 (de) * 2014-03-05 2015-09-10 Siemens Aktiengesellschaft Verfahren zur Ansteuerung eines Röntgendetektors und zugehörige Steuereinheit
EP3143430B1 (en) * 2014-10-31 2018-01-10 Koninklijke Philips N.V. Sensor device and imaging system for detecting radiation signals
US10172577B2 (en) * 2014-12-05 2019-01-08 Koninklijke Philips N.V. X-ray detector device for inclined angle X-ray radiation
RU2705717C2 (ru) * 2014-12-17 2019-11-11 Конинклейке Филипс Н.В. Детектор и способ для обнаружения ионизирующего излучения
DE102016221481B4 (de) 2016-11-02 2021-09-16 Siemens Healthcare Gmbh Strahlungsdetektor mit einer Zwischenschicht
US10156645B2 (en) * 2016-12-23 2018-12-18 General Electric Company Systems and methods for sub-pixel location determination at sidewalls and corners of detectors
EP3404447B1 (de) * 2017-05-17 2019-08-14 Siemens Healthcare GmbH Röntgendetektor aufweisend eine lichtquelle am trägerelement
JP7250919B2 (ja) * 2019-05-17 2023-04-03 Ｊｘ金属株式会社 半導体ウエハ、放射線検出素子、放射線検出器、及び化合物半導体単結晶基板の製造方法
JP7265004B2 (ja) * 2019-05-17 2023-04-25 Ｊｘ金属株式会社 半導体ウエハ、放射線検出素子、放射線検出器、及び化合物半導体単結晶基板の製造方法
JP7423423B2 (ja) * 2020-05-28 2024-01-29 株式会社日立製作所 半導体検出器およびその製造方法
US11835666B1 (en) * 2020-07-31 2023-12-05 Redlen Technologies, Inc. Photon counting computed tomography detector with improved count rate stability and method of operating same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10641911B2 (en) 2015-12-02 2020-05-05 Shenzhen Xpectvision Technology Co., Ltd. Packaging methods of semiconductor X-ray detectors

Also Published As

Publication number Publication date
US20140284489A1 (en) 2014-09-25
BR112014010873A8 (pt) 2017-06-20
JP6251683B2 (ja) 2017-12-20
JP2015504513A (ja) 2015-02-12
IN2014CN03496A (enExample) 2015-10-16
US9069088B2 (en) 2015-06-30
EP2748638A1 (en) 2014-07-02
WO2013068944A1 (en) 2013-05-16
RU2605523C2 (ru) 2016-12-20
CN103917897A (zh) 2014-07-09
RU2014123326A (ru) 2015-12-20
EP2748638B1 (en) 2019-09-18
BR112014010873A2 (pt) 2017-06-13

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