CN103907216A - 对包含银纳米线的基质的选择性蚀刻 - Google Patents

对包含银纳米线的基质的选择性蚀刻 Download PDF

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Publication number
CN103907216A
CN103907216A CN201280052467.XA CN201280052467A CN103907216A CN 103907216 A CN103907216 A CN 103907216A CN 201280052467 A CN201280052467 A CN 201280052467A CN 103907216 A CN103907216 A CN 103907216A
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Prior art keywords
etching
poly
printing
polymer
etching paste
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Chinese (zh)
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W·斯托库姆
O·多尔
I·科勒
C·马图舍克
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Merck Patent GmbH
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Merck Patent GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H10F71/1385—Etching transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • ing And Chemical Polishing (AREA)
  • Surface Treatment Of Glass (AREA)
  • Catalysts (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Manufacturing Of Electric Cables (AREA)
CN201280052467.XA 2011-10-27 2012-09-28 对包含银纳米线的基质的选择性蚀刻 Pending CN103907216A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP11008621.2A EP2587564A1 (en) 2011-10-27 2011-10-27 Selective etching of a matrix comprising silver nanowires or carbon nanotubes
EP11008621.2 2011-10-27
PCT/EP2012/004095 WO2013060409A1 (en) 2011-10-27 2012-09-28 Selective etching of a matrix comprising silver nano wires

Publications (1)

Publication Number Publication Date
CN103907216A true CN103907216A (zh) 2014-07-02

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Country Link
US (1) US9379326B2 (cg-RX-API-DMAC7.html)
EP (2) EP2587564A1 (cg-RX-API-DMAC7.html)
JP (1) JP2015501541A (cg-RX-API-DMAC7.html)
KR (1) KR20140085563A (cg-RX-API-DMAC7.html)
CN (1) CN103907216A (cg-RX-API-DMAC7.html)
BR (1) BR112014009871A2 (cg-RX-API-DMAC7.html)
IN (1) IN2014KN01122A (cg-RX-API-DMAC7.html)
PH (1) PH12014500612A1 (cg-RX-API-DMAC7.html)
SG (1) SG11201401650UA (cg-RX-API-DMAC7.html)
TW (1) TWI561459B (cg-RX-API-DMAC7.html)
WO (1) WO2013060409A1 (cg-RX-API-DMAC7.html)

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CN104962919A (zh) * 2015-07-31 2015-10-07 合肥微晶材料科技有限公司 一种银纳米线的刻蚀液及刻蚀方法
CN105374696A (zh) * 2014-08-05 2016-03-02 上海蓝沛信泰光电科技有限公司 一种利用激光刻蚀制备透明金属引线结构的方法
CN106155429A (zh) * 2015-03-25 2016-11-23 联想(北京)有限公司 电子设备、触控部件及其设置方法
CN109835867A (zh) * 2017-11-24 2019-06-04 中芯国际集成电路制造(上海)有限公司 刻蚀溶液和刻蚀方法
CN114517094A (zh) * 2020-11-20 2022-05-20 苏州阿特斯阳光电力科技有限公司 一种丝网印刷电化学刻蚀用浆料及其制备方法和应用

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CN105720463B (zh) 2014-08-01 2021-05-14 恩耐公司 光纤和光纤传输的激光器中的背向反射保护与监控
KR102254561B1 (ko) * 2014-09-30 2021-05-21 동우 화인켐 주식회사 은 나노 와이어의 식각액 조성물
KR102323848B1 (ko) * 2014-09-30 2021-11-09 동우 화인켐 주식회사 은 나노 와이어의 식각액 조성물
US9296614B1 (en) 2014-11-12 2016-03-29 Corning Incorporated Substrate such as for use with carbon nanotubes
US9837783B2 (en) 2015-01-26 2017-12-05 Nlight, Inc. High-power, single-mode fiber sources
US10050404B2 (en) 2015-03-26 2018-08-14 Nlight, Inc. Fiber source with cascaded gain stages and/or multimode delivery fiber with low splice loss
US10829605B2 (en) 2015-07-02 2020-11-10 Sabic Global Technologies B.V. Process and material for growth of adsorbed compound via nanoscale-controlled resistive heating and uses thereof
CN107924023B (zh) 2015-07-08 2020-12-01 恩耐公司 具有用于增加的光束参数乘积的中心折射率受抑制的纤维
US9447504B1 (en) * 2015-09-28 2016-09-20 Xerox Corporation Method of etching using inkjet printing
WO2017091606A1 (en) 2015-11-23 2017-06-01 Nlight, Inc. Predictive modification of laser diode drive current waveform in high power laser systems
US11179807B2 (en) 2015-11-23 2021-11-23 Nlight, Inc. Fine-scale temporal control for laser material processing
CN108367389B (zh) 2015-11-23 2020-07-28 恩耐公司 激光加工方法和装置
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JP7221579B2 (ja) * 2016-03-22 2023-02-14 富士電機株式会社 樹脂組成物
US10730785B2 (en) 2016-09-29 2020-08-04 Nlight, Inc. Optical fiber bending mechanisms
US10423015B2 (en) 2016-09-29 2019-09-24 Nlight, Inc. Adjustable beam characteristics
US10732439B2 (en) 2016-09-29 2020-08-04 Nlight, Inc. Fiber-coupled device for varying beam characteristics
CN107068412B (zh) * 2016-12-08 2018-10-16 常州大学 一种高功率的长线性超级电容器及其制备方法
KR102611837B1 (ko) 2017-04-04 2023-12-07 엔라이트 인크. 검류계 스캐너 보정을 위한 광학 기준 생성
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CN110444632A (zh) * 2019-07-08 2019-11-12 绵阳金能移动能源有限公司 一种采用石墨烯导电膜制备柔性太阳电池前电极的方法
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105374696A (zh) * 2014-08-05 2016-03-02 上海蓝沛信泰光电科技有限公司 一种利用激光刻蚀制备透明金属引线结构的方法
CN105374696B (zh) * 2014-08-05 2018-08-28 上海蓝沛信泰光电科技有限公司 一种利用激光刻蚀制备透明金属引线结构的方法
CN106155429A (zh) * 2015-03-25 2016-11-23 联想(北京)有限公司 电子设备、触控部件及其设置方法
CN104962919A (zh) * 2015-07-31 2015-10-07 合肥微晶材料科技有限公司 一种银纳米线的刻蚀液及刻蚀方法
CN104962919B (zh) * 2015-07-31 2017-09-22 合肥银派科技有限公司 一种银纳米线的刻蚀液及刻蚀方法
CN109835867A (zh) * 2017-11-24 2019-06-04 中芯国际集成电路制造(上海)有限公司 刻蚀溶液和刻蚀方法
CN109835867B (zh) * 2017-11-24 2023-07-14 中芯国际集成电路制造(上海)有限公司 刻蚀溶液和刻蚀方法
CN114517094A (zh) * 2020-11-20 2022-05-20 苏州阿特斯阳光电力科技有限公司 一种丝网印刷电化学刻蚀用浆料及其制备方法和应用
CN114517094B (zh) * 2020-11-20 2023-08-22 苏州阿特斯阳光电力科技有限公司 一种丝网印刷电化学刻蚀用浆料及其制备方法和应用

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JP2015501541A (ja) 2015-01-15
US20140291287A1 (en) 2014-10-02
EP2771919A1 (en) 2014-09-03
US9379326B2 (en) 2016-06-28
IN2014KN01122A (cg-RX-API-DMAC7.html) 2015-10-16
TW201323319A (zh) 2013-06-16
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PH12014500612A1 (en) 2014-04-28
BR112014009871A2 (pt) 2017-04-18

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