CN103904023A - 厚铝刻蚀工艺中光刻胶的去除方法 - Google Patents

厚铝刻蚀工艺中光刻胶的去除方法 Download PDF

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CN103904023A
CN103904023A CN201210572829.XA CN201210572829A CN103904023A CN 103904023 A CN103904023 A CN 103904023A CN 201210572829 A CN201210572829 A CN 201210572829A CN 103904023 A CN103904023 A CN 103904023A
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thick aluminum
etching process
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郭振华
虞颖
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

本发明公开了一种厚铝刻蚀工艺中光刻胶的去除方法，该方法在金属铝层刻蚀后，仅通入水汽，在水汽化环境中去除光刻胶。本发明在不改变厚铝刻蚀方法的前提下，通过优化去胶条件，减少了厚铝侧壁聚合物的堆积，从而降低了侧壁聚合物的腰带效应，确保了后续湿法刻蚀后，厚铝侧壁无胶残留；同时，还减少了气体的使用量和去胶时间。

Description

厚铝刻蚀工艺中光刻胶的去除方法
技术领域
本发明涉及集成电路制造领域，特别是涉及厚铝刻蚀工艺中的去胶方法。
背景技术
金属铝刻蚀是集成电路制造中用来形成互联线的重要刻蚀工艺。厚铝刻蚀工艺是整个铝刻蚀工艺中重要的一类，主要用于需要有较大工作电流的产品工艺中，如Power MOS等。厚铝工艺中铝(种类有AlCu和AlSiCu)的厚度通常有30～40K，刻蚀时间较长，相应的用来定义图形的光刻胶也比较厚，通常大约需要4μm（如图1所示）。在刻蚀过程中产生的非挥发性副产物以及光刻胶刻蚀中产生的聚合物容易在铝线侧壁堆积，形成腰带效应，如图2、3所示。
现有的厚铝刻蚀工艺在去除光刻胶时，采用的是多步循环的去胶方法，即在铝刻蚀完成后转移到去胶腔中，先通入水汽，在微波的作用下解离后与光刻胶反应；之后再用N2、O2和H2O的混合气体微波解离后和光刻胶反应，如此循环进行，直至把光刻胶去除。常用的去胶条件如表1所示：
表1多步循环去胶条件
第1步 第2步 第3步 第4步 第5步 第6步
去胶时间(S) 50-300 50-300 50-300 50-300 50-300 50-300
压力(Torr) 0.3-10 0.3-10 0.3-10 0.3-10 0.3-10 0.3-10
电源功率(W) 500-1800 500-1800 500-1800 500-1800 500-1800 500-1800
温度(℃） 150-350 150-350 150-350 150-350 150-350 150-350
水气H2O（sccm） 100-800 100-800 100-800 100-800 100-800 100-800
氧气O2（sccm） 无 3000 无 3000 无 3000
氮气N2（sccm） 无 200 无 200 无 200
由于多步循环去胶的工艺条件中，比较多的运用了N2，这使得铝线侧壁聚合物更加致密，难以去除。同时，由于循环次数多，去胶时间较长，侧壁聚合物容易被烤硬，变得更加坚固，更加难以去除，从而增加了后道湿法去除侧壁聚合物的难度（湿法刻蚀后的铝线侧壁外观如图4所示）。
发明内容
本发明要解决的技术问题是提供一种厚铝刻蚀工艺中光刻胶的去除方法，它可以改善厚铝侧壁聚合物的腰带效应。
为解决上述技术问题，本发明的厚铝刻蚀工艺中光刻胶的去除方法，是在金属铝层刻蚀后，只通入水汽，在水汽化环境中去除光刻胶。
其中，工艺条件为：水汽流量100～800sccm，反应温度150～350℃，压力0.3～10Torr，电源功率500～1800W，去胶时间50～300s。
较佳的，去胶时间为200s。
较佳的，压力为0.3～10Torr。
本发明在不改变厚铝刻蚀方法的前提下，通过优化去胶条件，减少了厚铝侧壁聚合物的堆积，从而降低了侧壁聚合物的腰带效应，确保了后续湿法刻蚀后，厚铝侧壁无胶残留；同时，还减少了气体的使用量和去胶时间。
附图说明
图1是厚铝刻蚀前的膜层结构示意图。
图2是厚铝刻蚀后的膜层结构示意图。
图3是用现有厚铝刻蚀工艺形成的铝线侧壁的SEM（扫描电子显微镜）图。图中，铝线侧壁有较致密的聚合物。
图4是用现有厚铝刻蚀工艺形成的铝线侧壁，在湿法刻蚀后的SEM图。其中，（a）为空旷区，（b）为图形密集区。
图5是采用本发明实施例的厚铝刻蚀工艺形成的铝线侧壁，在湿法刻蚀后的SEM图。其中，（a）为空旷区，（b）为图形密集区。
具体实施方式
为对本发明的技术内容、特点与功效有更具体的了解，现结合图示的实施方式，详述如下：
本发明在金属铝层刻蚀后，在与现有去胶方法相同的反应器件中进行去除光刻胶的工艺步骤。具体工艺方法为：在厚铝刻蚀完成后转移到去胶腔中，通入水汽，在微波作用下把水汽解离，与光刻胶反应，达到去胶的目的。H2O气的流量为100～800sccm，反应温度维持在150～350℃，压力为0.3～10Torr，射频电源功率为500～1800W，去胶时间为50～300s。其中，在一较佳实施例中，采用的去胶时间为200s，压力为0.3～5Torr。
采用上述去胶方法后，在湿法刻蚀后的铝线侧壁外观如图5所示，从图5中可以看到，铝线侧壁已没有聚合物残留。
与现有去胶工艺相比，本发明的去胶工艺仅使用了水汽，且在相同的反应器件下进行，从而不仅减少了气体的使用量（不需要使用N2、O2），节省了去胶时间（由270s减少为200s），减少了去胶的工艺步骤，而且避免了聚合物硬化，确保了后续湿法去除聚合物步骤的有效进行。

Claims (4)

1.厚铝刻蚀工艺中光刻胶的去除方法，其特征在于，在金属铝层刻蚀后，只通入水汽，在水汽化环境中去除光刻胶。
2.如权利要求1所述的方法，其特征在于，工艺条件为：水汽流量100～800sccm，反应温度150～350℃，压力0.3～10Torr，射频电源功率500～1800W，去胶时间50～300s。
3.如权利要求2所述的方法，其特征在于，去胶时间为200s。
4.如权利要求2所述的方法，其特征在于，压力0.3～5Torr。
CN201210572829.XA 2012-12-25 2012-12-25 厚铝刻蚀工艺中光刻胶的去除方法 Pending CN103904023A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104599962A (zh) * 2014-12-29 2015-05-06 上海华虹宏力半导体制造有限公司 厚铝刻蚀工艺中聚合物的去除方法
CN113223958A (zh) * 2021-04-25 2021-08-06 华虹半导体(无锡)有限公司 一种改善厚铝刻蚀工艺中聚合物的方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1141501A (zh) * 1995-04-21 1997-01-29 日本电气株式会社 高速去胶法
TW484205B (en) * 1998-10-12 2002-04-21 Promos Technologies Inc Manufacturing method of interconnect to prevent the plug erosion
US6492257B1 (en) * 2000-02-04 2002-12-10 Advanced Micro Devices, Inc. Water vapor plasma for effective low-k dielectric resist stripping
KR20050022475A (ko) * 2003-09-01 2005-03-08 동부아남반도체 주식회사 캐패시터를 갖는 반도체 소자 제조 방법
US20080261405A1 (en) * 2007-04-19 2008-10-23 Applied Materials, Inc. Hydrogen ashing enhanced with water vapor and diluent gas
CN101661886A (zh) * 2008-08-25 2010-03-03 上海华虹Nec电子有限公司 半导体制备中源漏注入结构的制备方法
CN102073227A (zh) * 2009-11-25 2011-05-25 无锡华润上华半导体有限公司 光刻胶的去除方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1141501A (zh) * 1995-04-21 1997-01-29 日本电气株式会社 高速去胶法
TW484205B (en) * 1998-10-12 2002-04-21 Promos Technologies Inc Manufacturing method of interconnect to prevent the plug erosion
US6492257B1 (en) * 2000-02-04 2002-12-10 Advanced Micro Devices, Inc. Water vapor plasma for effective low-k dielectric resist stripping
KR20050022475A (ko) * 2003-09-01 2005-03-08 동부아남반도체 주식회사 캐패시터를 갖는 반도체 소자 제조 방법
US20080261405A1 (en) * 2007-04-19 2008-10-23 Applied Materials, Inc. Hydrogen ashing enhanced with water vapor and diluent gas
CN101661886A (zh) * 2008-08-25 2010-03-03 上海华虹Nec电子有限公司 半导体制备中源漏注入结构的制备方法
CN102073227A (zh) * 2009-11-25 2011-05-25 无锡华润上华半导体有限公司 光刻胶的去除方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104599962A (zh) * 2014-12-29 2015-05-06 上海华虹宏力半导体制造有限公司 厚铝刻蚀工艺中聚合物的去除方法
CN113223958A (zh) * 2021-04-25 2021-08-06 华虹半导体(无锡)有限公司 一种改善厚铝刻蚀工艺中聚合物的方法
CN113223958B (zh) * 2021-04-25 2022-09-20 华虹半导体(无锡)有限公司 一种改善厚铝刻蚀工艺中聚合物的方法

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Application publication date: 20140702