CN103898598B - 晶体生长装置 - Google Patents
晶体生长装置 Download PDFInfo
- Publication number
- CN103898598B CN103898598B CN201210589279.2A CN201210589279A CN103898598B CN 103898598 B CN103898598 B CN 103898598B CN 201210589279 A CN201210589279 A CN 201210589279A CN 103898598 B CN103898598 B CN 103898598B
- Authority
- CN
- China
- Prior art keywords
- transfer
- cooling cavities
- casing
- cavity
- growing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
晶体生长装置 | 100、200 |
第一箱体 | 10 |
第二箱体 | 20 |
控制机构 | 30、241 |
晶体 | 40 |
第一本体 | 11 |
长晶室 | 12 |
收容部 | 13 |
开口 | 131 |
隔热器 | 14 |
成型腔 | 141 |
加热器 | 15 |
转移口 | 17 |
第二本体 | 21 |
容纳部 | 211 |
转移腔体 | 22 |
连通口 | 221 |
冷却腔体 | 23、231 |
提拉杆 | 24 |
隔板 | 26 |
加热件 | 27 |
支撑杆 | 28 |
绝缘基座 | 31 |
加热体 | 33 |
隔开组件 | 35 |
连接件 | 351 |
隔开件 | 353 |
转移件 | 37 |
旋转部 | 371 |
转移部 | 373 |
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210589279.2A CN103898598B (zh) | 2012-12-29 | 2012-12-29 | 晶体生长装置 |
TW102101265A TWI480434B (zh) | 2012-12-29 | 2013-01-14 | 晶體生長裝置 |
US14/106,863 US20140182512A1 (en) | 2012-12-29 | 2013-12-16 | Crystal growth apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210589279.2A CN103898598B (zh) | 2012-12-29 | 2012-12-29 | 晶体生长装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103898598A CN103898598A (zh) | 2014-07-02 |
CN103898598B true CN103898598B (zh) | 2016-08-10 |
Family
ID=50990161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210589279.2A Active CN103898598B (zh) | 2012-12-29 | 2012-12-29 | 晶体生长装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20140182512A1 (zh) |
CN (1) | CN103898598B (zh) |
TW (1) | TWI480434B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105014536B (zh) * | 2015-08-14 | 2017-06-16 | 麦斯克电子材料有限公司 | 一种晶棒滚磨前对中装置 |
JP6060349B1 (ja) * | 2016-02-25 | 2017-01-18 | 並木精密宝石株式会社 | サファイア単結晶部材製造装置およびサファイア単結晶部材の製造方法 |
CN110904500B (zh) * | 2019-11-04 | 2021-09-28 | 南京同溧晶体材料研究院有限公司 | 一种多次籽晶可替换的导膜法蓝宝石晶体生长炉 |
CN110923815B (zh) * | 2019-11-04 | 2021-06-15 | 南京同溧晶体材料研究院有限公司 | 一种基于籽晶替换方案的导膜法蓝宝石晶体生长炉 |
DE102020106291B4 (de) * | 2020-03-09 | 2024-02-08 | Ebner Industrieofenbau Gmbh | Heizvorrichtung und Verfahren zur Kristallzüchtung mit beweglicher Impfkristallhalterung |
WO2022052080A1 (zh) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | 一种多次籽晶可替换的导膜法蓝宝石晶体生长炉 |
WO2022052079A1 (zh) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | 一种基于籽晶替换方案的导膜法蓝宝石晶体生长炉 |
CN112080792A (zh) * | 2020-09-21 | 2020-12-15 | 常州机电职业技术学院 | 一种制备芯片用的真空晶棒拉拔设备 |
CN113061976A (zh) * | 2021-03-25 | 2021-07-02 | 杨伟洛 | 一种基于切克劳斯基法的单晶硅拉制装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN86200234U (zh) * | 1986-01-31 | 1986-10-22 | 中国科学院声学研究所 | 单晶连续生长装置 |
CN102352529A (zh) * | 2011-09-30 | 2012-02-15 | 上海汉虹精密机械有限公司 | 双上炉体连续加料硅单晶炉及其使用方法 |
CN202202012U (zh) * | 2011-07-04 | 2012-04-25 | 浙江晶盛机电股份有限公司 | 具备双副炉室结构的单晶炉 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4335081A (en) * | 1979-01-15 | 1982-06-15 | Mobil Tyco Solar Energy Corporation | Crystal growth furnace with trap doors |
US4390505A (en) * | 1981-03-30 | 1983-06-28 | Mobil Solar Energy Corporation | Crystal growth apparatus |
KR930702557A (ko) * | 1991-09-19 | 1993-09-09 | 후지무라 마사야 | 고해리압 화합물 반도체 단결정의 제조장치 및 제조방법 |
CA2691554A1 (en) * | 2010-02-01 | 2011-08-01 | Michael Krautter | Crystal growing device |
-
2012
- 2012-12-29 CN CN201210589279.2A patent/CN103898598B/zh active Active
-
2013
- 2013-01-14 TW TW102101265A patent/TWI480434B/zh active
- 2013-12-16 US US14/106,863 patent/US20140182512A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN86200234U (zh) * | 1986-01-31 | 1986-10-22 | 中国科学院声学研究所 | 单晶连续生长装置 |
CN202202012U (zh) * | 2011-07-04 | 2012-04-25 | 浙江晶盛机电股份有限公司 | 具备双副炉室结构的单晶炉 |
CN102352529A (zh) * | 2011-09-30 | 2012-02-15 | 上海汉虹精密机械有限公司 | 双上炉体连续加料硅单晶炉及其使用方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103898598A (zh) | 2014-07-02 |
TW201435162A (zh) | 2014-09-16 |
US20140182512A1 (en) | 2014-07-03 |
TWI480434B (zh) | 2015-04-11 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180411 Address after: No. 7 standard factory building, Henan Zhengzhou export processing zone, Ninth Avenue, Zhengzhou Economic Development Zone, Henan Patentee after: Futaihua precision electronics (Zhengzhou) Co.,Ltd. Address before: 450000 No. 7 standard factory building, Henan export processing zone, Ninth Street, Zhengzhou Economic Development Zone, Henan, Zhengzhou Co-patentee before: HON HAI PRECISION INDUSTRY Co.,Ltd. Patentee before: Futaihua precision electronics (Zhengzhou) Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: 450016 standard workshop No.7, Henan Zhengzhou export processing zone, 9th Street, Zhengzhou Economic Development Zone, Henan Province Patentee after: Fulian Precision Electronics (Zhengzhou) Co.,Ltd. Address before: 450016 standard workshop No.7, Henan Zhengzhou export processing zone, 9th Street, Zhengzhou Economic Development Zone, Henan Province Patentee before: Futaihua precision electronics (Zhengzhou) Co.,Ltd. |
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CP03 | Change of name, title or address |