CN103887293A - Novel LED chip - Google Patents

Novel LED chip Download PDF

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Publication number
CN103887293A
CN103887293A CN201210554067.0A CN201210554067A CN103887293A CN 103887293 A CN103887293 A CN 103887293A CN 201210554067 A CN201210554067 A CN 201210554067A CN 103887293 A CN103887293 A CN 103887293A
Authority
CN
China
Prior art keywords
led chip
common
novel led
chip
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201210554067.0A
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Chinese (zh)
Inventor
熊大曦
杨西斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUZHOU KEYI-SKY SEMICONDUCTOR TECHNOLOGIES Inc
Original Assignee
SUZHOU KEYI-SKY SEMICONDUCTOR TECHNOLOGIES Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUZHOU KEYI-SKY SEMICONDUCTOR TECHNOLOGIES Inc filed Critical SUZHOU KEYI-SKY SEMICONDUCTOR TECHNOLOGIES Inc
Priority to CN201210554067.0A priority Critical patent/CN103887293A/en
Publication of CN103887293A publication Critical patent/CN103887293A/en
Pending legal-status Critical Current

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Abstract

Disclosed in the invention is a novel LED chip. The scribing and splintering process in the LED chip cutting technology can be improved. A plurality of traditional small LED chip structures are kept on the same substrate, thereby maintaining small-current power supplying and heavy-current density during chip working. The LED chip is directly packaged to the high-thermal conductivity substrate and is connected with the electrode by a welding wire; and a circuit layer is arranged at the high-thermal conductivity substrate. According to the invention, on the basis of the existing process flow, the LED module packaging process is substantially simplified, thereby improving the production efficiency.

Description

A kind of Novel LED chip
Technical field
The present invention relates to semiconductor light emitting technical field.
Background technology
LED technical field at present, chip is after the making flow process of scribing and sliver, generally form independently various criterion size, in practical application, need, according to power and heat radiation requirement, each little chip to be encapsulated, for example, for the chip of 1 × 1 square millimeter, if need the light-emitting area of 64 square millimeters, need to, for 64 chips, carry out die bond process 64 times, what need is consuming time longer, has reduced production efficiency; And if the monoblock chip of 64 square millimeters customized, during due to its work need current density larger, job stability and thermal diffusivity lag far behind the combination of 1 × 1 square millimeter of little chip.Therefore needing one badly can enhance productivity, and can ensure again the Novel LED chip of job stability simultaneously.
Summary of the invention
For overcoming the lower problem of operating efficiency in existing little chip package flow process, main purpose of the present invention designs a kind of Novel LED chip exactly, enhances productivity, and keeps the stability of LED module work simultaneously.
Preferably, described a kind of Novel LED chip, has common substrate.
Preferably, described a kind of Novel LED chip, common suprabasil chip light emitting face, has been divided into independently minizone, and each interval is connected with electrode by bonding wire, realizes independently-powered work.
Preferably, described a kind of Novel LED chip, between suprabasil each individual cell, can form common anode electrode structure, also can form common cathode structure.
Preferably, described a kind of Novel LED chip, between common suprabasil each individual cell, its intrinsic luminescence center wavelength is identical, but also can, by means such as plating fluorescent material, realize the light outgoing of different centre wavelengths.
Preferably, described a kind of Novel LED chip, the chip of LED module, in encapsulation process, only need carry out one-time positioning to common substrate, can realize the accurate location of the luminous minizone of all independences in substrate.
  
Brief description of the drawings
Fig. 1 is LED chip encapsulating structure schematic diagram in current technology.
Fig. 2 is the structural representation of a kind of Novel LED chip encapsulation of the present invention.
  
main element description of symbols
1:LED chip.
2: bonding wire.
3: electrode.
  
Embodiment
Below by embodiment, and by reference to the accompanying drawings, technical scheme of the present invention is specifically described.
Embodiment 1
Fig. 1 has shown the structural representation that in current technology, single little chip encapsulates respectively, and LED chip in figure (1) quantity has 4, each LED chip (1) need to be encapsulated on heat-radiating substrate, needs altogether encapsulation flow process 4 times.Each LED chip (1) is connected with electrode (3) by bonding wire (2), realizes independently-powered.
Embodiment 2
Fig. 2 has shown a kind of Novel LED chip of the present invention, in figure, dotted line represents the border in different chip light emittings interval on same substrate, chip light emitting face is divided into 4, but 4 minizones have common substrate, it is same entirety physically, therefore only substrate need be carried out to one-time positioning, can realize the location of four luminous minizones, simplify encapsulation flow process.In figure, each little light-emitting area is connected on electrode by bonding wire, realizes power supply respectively, and bonding wire principle is similar to Example 1.
  
By above execution mode, be not difficult to find out the design that the present invention proposes a kind of Novel LED chip, can increase substantially the encapsulation flow process of LED module.In present design, in each substrate, the quantity of luminous minizone can change, and is not limited to 4 that in above-described embodiment, show.
Above embodiment is only the design of explanation the technology of the present invention and feature; its object is to allow person skilled in the art understand content of the present invention and implemented; can not limit the scope of the invention with this, all little variations such as Spirit Essence does according to the present invention or modify are all encompassed in protection scope of the present invention.

Claims (5)

1. a Novel LED chip, is characterized in that: described LED chip, has common substrate.
2. a kind of Novel LED chip according to claim 1, is characterized in that: common suprabasil chip light emitting face, be divided into independently minizone, and each interval is connected with electrode by bonding wire, realizes independently-powered work.
3. a kind of Novel LED chip according to claim 2, is characterized in that: between suprabasil each individual cell, can form common anode electrode structure, also can form common cathode structure, or form the not planar chip structure of common electrode.
4. a kind of Novel LED chip according to claim 2, is characterized in that: between common suprabasil each individual cell, its intrinsic luminescence center wavelength is identical, but also can, by means such as plating fluorescent material, realize the light outgoing of different centre wavelengths.
5. a kind of Novel LED chip according to claim 1, is characterized in that: the chip of LED module, in encapsulation process, only need carry out one-time positioning to common substrate, can realize the accurate location of the luminous minizone of all independences in substrate.
CN201210554067.0A 2012-12-19 2012-12-19 Novel LED chip Pending CN103887293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210554067.0A CN103887293A (en) 2012-12-19 2012-12-19 Novel LED chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210554067.0A CN103887293A (en) 2012-12-19 2012-12-19 Novel LED chip

Publications (1)

Publication Number Publication Date
CN103887293A true CN103887293A (en) 2014-06-25

Family

ID=50956119

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210554067.0A Pending CN103887293A (en) 2012-12-19 2012-12-19 Novel LED chip

Country Status (1)

Country Link
CN (1) CN103887293A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102214651A (en) * 2011-05-25 2011-10-12 映瑞光电科技(上海)有限公司 LED (light emitting diode) pixel unit device structure and preparation method thereof
CN102231378A (en) * 2011-05-25 2011-11-02 映瑞光电科技(上海)有限公司 Light-emitting diode (LED) packaging structure and preparation method thereof
CN202142529U (en) * 2011-07-04 2012-02-08 陈建兴 Multi-grain light-emitting diode (LED) component assembly
CN102468293A (en) * 2010-11-09 2012-05-23 柏友照明科技股份有限公司 Polycrystal packaging structure directly and electrically connected to alternating-current power supply

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102468293A (en) * 2010-11-09 2012-05-23 柏友照明科技股份有限公司 Polycrystal packaging structure directly and electrically connected to alternating-current power supply
CN102214651A (en) * 2011-05-25 2011-10-12 映瑞光电科技(上海)有限公司 LED (light emitting diode) pixel unit device structure and preparation method thereof
CN102231378A (en) * 2011-05-25 2011-11-02 映瑞光电科技(上海)有限公司 Light-emitting diode (LED) packaging structure and preparation method thereof
CN202142529U (en) * 2011-07-04 2012-02-08 陈建兴 Multi-grain light-emitting diode (LED) component assembly

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Application publication date: 20140625

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