CN103887233B - 集成电路用低介电常数薄膜层的制备工艺 - Google Patents

集成电路用低介电常数薄膜层的制备工艺 Download PDF

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CN103887233B
CN103887233B CN201410136480.4A CN201410136480A CN103887233B CN 103887233 B CN103887233 B CN 103887233B CN 201410136480 A CN201410136480 A CN 201410136480A CN 103887233 B CN103887233 B CN 103887233B
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heater
pressure
dielectric constant
thin film
low dielectric
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CN103887233A (zh
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孙旭辉
夏雨健
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Zhongxin Jianhai Semiconductor Technology Anhui Co ltd
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Suzhou University
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Abstract

本发明公开一种集成电路用低介电常数薄膜层的制备工艺，包括：抽除炉体内气体；当炉体内真空度小于10‑3Pa时，启动13.36MHz射频电源和匹配器；将用于排净炉体内残存气体的排气氮气从第三进气管依次经过第二耐压混气罐、第二喷嘴送入炉体内；将八甲基环四硅氧烷、环己烷混合均匀并注入耐压不锈钢釜内，将鼓泡氮气、惰性气体分别从第一进气管、第二进气管注入并依次经过第一耐压混气罐、耐压不锈钢釜、第一喷嘴送入炉体内；沉积结束后，将已沉积的薄膜层转移至炉体的加热温区内进行退火处理后，从而获得低介电常数薄膜层。本发明实现了便捷精确调控薄膜介电常数值并获得了低介电常数值的薄膜层，此薄膜层化学成分更均匀，具有较好的热稳定性、硬度，提高了薄膜的平整度。

Description

集成电路用低介电常数薄膜层的制备工艺
技术领域
本发明涉及一种集成电路用低介电常数薄膜层的制备工艺，属于半导体技术领域。
背景技术
在集成电路内部，各个器件间的链接主要是靠金属导线。随着集成电路技术的发展，芯片中互联线密度不断增加，互连线的宽度和间距不断减小，由此产生的互联电阻（R）和电容（C）所产生的寄生效应越来越明显。为了降低互联RC延迟，提升芯片性能，具有低介电常数（k）的材料不断被提出和采用，并成为主要发展趋势。
用于制备低介电常数薄膜层的方法通常有等离子体增强化学气相沉积（PECVD）和旋涂（spin-caoting）两种方法。其中，等离子体增强化学气相沉积由于具有薄膜均匀，成本低等特点，被广泛应用于半导体工业中。
在众多的用于制备低介电常数的材料中，有机硅烷或有机硅氧烷由于其化学合成简单，成本较低，相较于气体易于储存运输，被广泛采用作为制备低介电常数材料的液体源，用该种液体源所制备的薄膜材料的化学组成可简要表示为SiCOH，分子间以硅氧键为主相连形成大规模的笼状结构。但普通的单一液体源难以便捷精确地调控其介电常数值，并且合成高碳硅比的液体源具有一定的困难，故大规模生产仍具有一定的困难。
发明内容
本发明目的是提供一种集成电路用低介电常数薄膜层的制备工艺，该制备方法实现了便捷精确调控薄膜介电常数值并获得了低介电常数值的薄膜层，此薄膜层化学成分更均匀，具有较好的热稳定性、硬度，提高了薄膜的平整度。
为达到上述目的，本发明采用的技术方案是：一种集成电路用低介电常数薄膜层的制备工艺，所述制备方法基于一沉积装置，所述沉积装置包括两端密封安装有端盖的炉体、位于炉体一侧的液体源喷射机构，所述炉体前半段缠绕有感应线圈，此感应线圈依次连接到13.36MHz射频电源和匹配器，所述液体源喷射机构包括耐压不锈钢釜、第一耐压混气罐和第二耐压混气罐，此第一耐压混气罐一端连接有均安装第一质量流量计的第一进气管、第二进气管，第一耐压混气罐另一端与耐压不锈钢釜一端通过安装有顶针阀的管路连接，耐压不锈钢釜另一端通过安装有顶针阀、第一质量流量计的管路连接到第一喷嘴；所述第二耐压混气罐一端连接有均安装第二质量流量计的第三进气管，所述第二耐压混气罐另一端连接到第二喷嘴，所述第一喷嘴、第二喷嘴密封地插入所述炉体一端的端盖从而嵌入炉体内；
一真空泵位于炉体另一侧，连接所述真空泵一端的管路密封地插入炉体另一端的端盖内，一手动挡板阀、真空计安装于端盖和真空泵之间的管路上；
包括以下步骤：
步骤一、关闭顶针阀和第一、第二质量流量计后，打开手动挡板阀和真空泵，抽除炉体内气体；
步骤二、当炉体内真空度小于10-3Pa时，启动13.36MHz射频电源和匹配器；
步骤三、开启第二质量流量计后，将用于排净炉体内残存气体的排气氮气或者惰性气体从第三进气管依次经过第二耐压混气罐、第二喷嘴送入炉体内；
步骤四、将八甲基环四硅氧烷、环己烷混合均匀并注入所述耐压不锈钢釜内，将鼓泡气体分别从第一进气管、第二进气管注入并依次经过第一耐压混气罐、耐压不锈钢釜、第一喷嘴送入炉体内，从而将八甲基环四硅氧烷、环己烷带入炉体内，八甲基环四硅氧烷、环己烷、鼓泡气体在等离子条件下在基底表面沉积一薄膜层；
步骤五、沉积结束后，关闭13.36MHz射频电源、匹配器、顶针阀和第一、第二质量流量计后，关闭手动挡板阀，并对炉体进行放气，待炉体内压力恢复至大气压时，打开真空泵一侧端盖，将已沉积的薄膜层转移至炉体的加热温区内，关闭端盖，打开手动挡板阀进行抽真空处理，当炉体内真空度小于10-3Pa时，将已沉积的薄膜层转移至炉体的加热温区内，加热至300℃~800℃保温进行退火处理后，退火的条件为真空无气体保护，从而获得所述低介电常数薄膜层。
上述技术方案中进一步改进的方案如下：
1. 上述方案中，一尾气净化器安装于端盖和真空泵之间。
2. 上述方案中，所述步骤四中鼓泡气体的流量为0.1sccm~1000sccm。
3. 上述方案中，所述步骤四中鼓泡气体为鼓泡氮气或者惰性气体，此惰性气体为氩气、氦气和氖气中的一种。
4. 上述方案中，所述步骤五中13.36MHz射频电源、匹配器的功率为25W~300W，沉积时间为30秒~1小时。
5. 上述方案中，所述步骤三中排气氮气或者惰性气体的流量为2~5sccm，通气时间为10分钟。
由于上述技术方案运用，本发明与现有技术相比具有下列优点和效果：
本发明集成电路用低介电常数薄膜层的制备工艺，其实现了便捷精确调控薄膜介电常数值并获得了低介电常数值的薄膜层，此薄膜层化学成分更均匀，具有较好的热稳定性、硬度，提高了薄膜的平整度；其次，其已沉积的薄膜层加热至300℃~800℃保温进行退火处理后，退火的条件为真空无气体保护，由于隔绝了大气的影响，使样品相对于在大气中退火有明显的重复性的提高，也已于控制，同时由于不引入保护气流，避免了样品被吹翻，同时也避免了样品表面存在湍流，因此样品表面气体氛围较为均匀；同时样品表面温度更加接近设定温度，因而具有更好的均匀性与可靠性。
附图说明
附图1为本发明制备方法基于的沉积装置结构示意图。
以上附图中：1、炉体；2、端盖；3、液体源喷射机构；4、感应线圈；5、13.36MHz射频电源；6、匹配器；7、耐压不锈钢釜；8、第一耐压混气罐；9、第二耐压混气罐；101、第一质量流量计；102、第二质量流量计；111、第一进气管；112、第二进气管；12、顶针阀；13、第一喷嘴；141、第三进气管；15、第二喷嘴；16、尾气净化器；17、真空泵；18、真空计；19、手动挡板阀。
具体实施方式
下面结合实施例对本发明作进一步描述：
实施例1~3：一种集成电路用低介电常数薄膜层的制备工艺，所述制备方法基于一沉积装置，所述沉积装置包括两端密封安装有端盖2的炉体1、位于炉体1一侧的液体源喷射机构3，所述炉体1前半段缠绕有感应线圈4，此感应线圈4依次连接到13.36MHz射频电源5和匹配器6，所述液体源喷射机构3包括耐压不锈钢釜7、第一耐压混气罐8和第二耐压混气罐9，此第一耐压混气罐8一端连接有均安装第一质量流量计101的第一进气管111、第二进气管112，第一耐压混气罐8另一端与耐压不锈钢釜7一端通过安装有顶针阀12的管路连接，耐压不锈钢釜7另一端通过安装有顶针阀12、第一质量流量计101的管路连接到第一喷嘴13；所述第二耐压混气罐9一端连接有均安装第二质量流量计102的第三进气管141，所述第二耐压混气罐9另一端连接到第二喷嘴15，所述第一喷嘴13、第二喷嘴15密封地插入所述炉体一端的端盖从而嵌入炉体内；
一真空泵17位于炉体1另一侧，连接所述真空泵17一端的管路密封地插入炉体1另一端的端盖2内，一手动挡板阀19、真空计18安装于端盖2和真空泵17之间的管路上；
包括以下步骤：
步骤一、关闭顶针阀12和第一、第二质量流量计101、102后，打开手动挡板阀19和真空泵17，抽除炉体1内气体；
步骤二、当炉体1内真空度小于10-3Pa时，启动13.36MHz射频电源5和匹配器6；
步骤三、开启第二质量流量计102后，将用于排净炉体内残存气体的排气氮气或者惰性气体从第三进气管141依次经过第二耐压混气罐9、第二喷嘴15送入炉体1内；此气体在随后过程中不关闭，仅根据需要调节流量：
步骤四、将八甲基环四硅氧烷、环己烷混合均匀并注入所述耐压不锈钢釜7内，将鼓泡气体分别从第一进气管111、第二进气管112注入并依次经过第一耐压混气罐8、耐压不锈钢釜7、第一喷嘴13送入炉体1内，从而将八甲基环四硅氧烷、环己烷带入炉体1内，八甲基环四硅氧烷、环己烷、鼓泡气体在等离子条件下在基底表面沉积一薄膜层；
步骤五、沉积结束后，关闭13.36MHz射频电源5、匹配器6、顶针阀12和第一、第二质量流量计101、102后，关闭手动挡板阀19，并对炉体1进行放气，待炉体1内压力恢复至大气压时，打开真空泵17一侧端盖，将已沉积的薄膜层转移至炉体1的加热温区内，关闭端盖，打开手动挡板阀进行抽真空处理，当炉体1内真空度小于10-3Pa时，将已沉积的薄膜层转移至炉体1的加热温区内，加热至300℃~800℃保温进行退火处理后，退火的条件为真空无气体保护，从而获得所述低介电常数薄膜层。
一尾气净化器16安装于端盖2和真空泵17之间。
上述步骤四中鼓泡气体的流量为0.1sccm~1000sccm。
上述步骤四中鼓泡气体为鼓泡氮气或者惰性气体，此惰性气体为氩气、氦气和氖气中的一种。
上述步骤五中13.36MHz射频电源5、匹配器6的功率为25W~300W，沉积时间为30秒~1小时。
上述步骤三中排气氮气或者惰性气体的流量为2~5sccm，通气时间为10分钟。
实施例1：
实施例2：
实施例3：
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。

Claims (3)

1.一种集成电路用低介电常数薄膜层的制备工艺，所述制备工艺基于一沉积装置，其特征在于：所述沉积装置包括两端密封安装有端盖（2）的炉体（1）、位于炉体（1）一侧的液体源喷射机构（3），所述炉体（1）前半段缠绕有感应线圈（4），此感应线圈（4）依次连接到13.36MHz射频电源（5）和匹配器（6），所述液体源喷射机构（3）包括耐压不锈钢釜（7）、第一耐压混气罐（8）和第二耐压混气罐（9），此第一耐压混气罐（8）一端连接有均安装第一质量流量计（101）的第一进气管（111）、第二进气管（112），第一耐压混气罐（8）另一端与耐压不锈钢釜（7）一端通过安装有顶针阀（12）的管路连接，耐压不锈钢釜（7）另一端通过安装有顶针阀（12）、第一质量流量计（101）的管路连接到第一喷嘴（13）；所述第二耐压混气罐（9）一端连接有均安装第二质量流量计（102）的第三进气管（141），所述第二耐压混气罐（9）另一端连接到第二喷嘴（15），所述第一喷嘴（13）、第二喷嘴（15）密封地插入所述炉体一端的端盖从而嵌入炉体内；
一真空泵（17）位于炉体（1）另一侧，连接所述真空泵（17）一端的管路密封地插入炉体（1）另一端的端盖（2）内，一手动挡板阀（19）、真空计（18）安装于真空泵侧端盖（2）和真空泵（17）之间的管路上；
包括以下步骤：
步骤一、关闭顶针阀（12）和第一、第二质量流量计（101、102）后，打开手动挡板阀（19）和真空泵（17），抽除炉体（1）内气体；
步骤二、当炉体（1）内真空度小于10-3Pa时，启动13.36MHz射频电源（5）和匹配器（6）；
步骤三、开启第二质量流量计（102）后，将用于排净炉体内残存气体的排气氮气或者惰性气体从第三进气管（141）依次经过第二耐压混气罐（9）、第二喷嘴（15）送入炉体（1）内；
步骤四、将八甲基环四硅氧烷、环己烷混合均匀并注入所述耐压不锈钢釜（7）内，将鼓泡气体分别从第一进气管（111）、第二进气管（112）注入并依次经过第一耐压混气罐（8）、耐压不锈钢釜（7）、第一喷嘴（13）送入炉体（1）内，从而将八甲基环四硅氧烷、环己烷带入炉体（1）内，八甲基环四硅氧烷、环己烷、鼓泡气体在等离子条件下在基底表面沉积一薄膜层；
步骤五、沉积结束后，关闭13.36MHz射频电源（5）、匹配器（6）、顶针阀（12）和第一、第二质量流量计（101、102）后，关闭手动挡板阀（19），并对炉体（1）进行放气，待炉体（1）内压力恢复至大气压时，打开真空泵（17）一侧端盖，将已沉积的薄膜层转移至炉体（1）的加热温区内，关闭端盖，打开手动挡板阀进行抽真空处理，当炉体（1）内真空度小于10-3Pa时，加热至300℃~800℃保温进行退火处理后，退火的条件为真空无气体保护，从而获得所述低介电常数薄膜层。
2.根据权利要求1所述的集成电路用低介电常数薄膜层的制备工艺，其特征在于：所述步骤四中鼓泡气体的流量为0.1sccm~1000sccm。
3.根据权利要求1所述的集成电路用低介电常数薄膜层的制备工艺，其特征在于：所述步骤四中鼓泡气体为鼓泡氮气或者惰性气体，此惰性气体为氩气、氦气和氖气中的一种。
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