CN103887139B - 用于制备低介电常数材料的等离子增强化学气相沉积装置 - Google Patents
用于制备低介电常数材料的等离子增强化学气相沉积装置 Download PDFInfo
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- CN103887139B CN103887139B CN201410137157.9A CN201410137157A CN103887139B CN 103887139 B CN103887139 B CN 103887139B CN 201410137157 A CN201410137157 A CN 201410137157A CN 103887139 B CN103887139 B CN 103887139B
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- 239000000463 material Substances 0.000 title claims abstract description 15
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 14
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- 239000007788 liquid Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract 3
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- 239000007789 gas Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 5
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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CN201410137157.9A CN103887139B (zh) | 2014-04-08 | 2014-04-08 | 用于制备低介电常数材料的等离子增强化学气相沉积装置 |
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CN201410137157.9A CN103887139B (zh) | 2014-04-08 | 2014-04-08 | 用于制备低介电常数材料的等离子增强化学气相沉积装置 |
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CN103887139A CN103887139A (zh) | 2014-06-25 |
CN103887139B true CN103887139B (zh) | 2017-01-11 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104797072B (zh) * | 2015-04-16 | 2018-06-19 | 大连交通大学 | 一种电感耦合式射频等离子体源 |
CN109646987B (zh) * | 2019-01-10 | 2024-03-26 | 合肥百思智能装备有限公司 | 一种连续进出料高真空有机小分子提纯专用设备 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1224085A (zh) * | 1998-12-25 | 1999-07-28 | 清华大学 | 超高真空化学气相淀积外延系统 |
CN2783707Y (zh) * | 2005-04-04 | 2006-05-24 | 应用材料股份有限公司 | 远距等离子体反应器的制程气体旁通装置 |
CN101021005A (zh) * | 2006-02-13 | 2007-08-22 | 恩益禧电子股份有限公司 | 淀积设备以及用于淀积膜的方法 |
CN101410958A (zh) * | 2006-03-29 | 2009-04-15 | 三菱电机株式会社 | 等离子体cvd设备、形成薄膜的方法及半导体装置 |
CN101591776A (zh) * | 2008-05-29 | 2009-12-02 | 联华电子股份有限公司 | 操作化学气相沉积室的方法 |
CN203774246U (zh) * | 2014-04-08 | 2014-08-13 | 苏州大学 | 用于制备低介电常数材料的等离子增强化学气相沉积装置 |
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2014
- 2014-04-08 CN CN201410137157.9A patent/CN103887139B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1224085A (zh) * | 1998-12-25 | 1999-07-28 | 清华大学 | 超高真空化学气相淀积外延系统 |
CN2783707Y (zh) * | 2005-04-04 | 2006-05-24 | 应用材料股份有限公司 | 远距等离子体反应器的制程气体旁通装置 |
CN101021005A (zh) * | 2006-02-13 | 2007-08-22 | 恩益禧电子股份有限公司 | 淀积设备以及用于淀积膜的方法 |
CN101410958A (zh) * | 2006-03-29 | 2009-04-15 | 三菱电机株式会社 | 等离子体cvd设备、形成薄膜的方法及半导体装置 |
CN101591776A (zh) * | 2008-05-29 | 2009-12-02 | 联华电子股份有限公司 | 操作化学气相沉积室的方法 |
CN203774246U (zh) * | 2014-04-08 | 2014-08-13 | 苏州大学 | 用于制备低介电常数材料的等离子增强化学气相沉积装置 |
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