CN103885281B - 一种光屏障基板的制备方法 - Google Patents

一种光屏障基板的制备方法 Download PDF

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CN103885281B
CN103885281B CN201410081024.4A CN201410081024A CN103885281B CN 103885281 B CN103885281 B CN 103885281B CN 201410081024 A CN201410081024 A CN 201410081024A CN 103885281 B CN103885281 B CN 103885281B
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metal electrode
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photoresist
substrate
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CN103885281A (zh
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张小祥
刘正
郭总杰
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Beijing BOE Display Technology Co Ltd
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Abstract

本发明公开了一种光屏障基板的制备方法，包括如下步骤：通过第一次构图工艺，在衬底上形成金属电极图形；在衬底及金属电极图形上方形成绝缘层薄膜；使用半色调掩膜技术，通过第二次构图工艺，在绝缘层上形成金属电极过孔，以及在绝缘层上形成金属电极与外部IC连线所需的沟道图形；在形成所述金属电极过孔和沟道图形的衬底上，形成透明电极层图形。本发明借助于半色调掩膜版和灰化工艺，使得绝缘层和透明电极层的形成由现有技术中的两道掩膜工艺减少为一道掩膜工艺，工艺得到了简化，制备效率得到提高，并且减少了一块掩膜版的使用，降低了光屏障基板的制备成本。

Description

一种光屏障基板的制备方法
技术领域
本发明涉及视差屏障技术领域，特别涉及一种光屏障基板的制备方法。
背景技术
光屏障式3D技术也被称为视差屏障或视差障栅技术，其原理和偏振式3D较为类似。光屏障式3D技术的实现方法是使用一个开关液晶屏、偏振膜和高分子液晶层，利用液晶层和偏振膜制造出一系列方向为90°的垂直条纹，这些条纹宽几十微米，通过条纹的光就形成了垂直的细条栅模式，称之为“视差障壁”。该技术正是利用了安置在背光模块及LCD面板间的视差障壁，在立体显示模式下，应该由左眼看到的图像显示在液晶屏上时，不透明的条纹会遮挡右眼；同理，应该由右眼看到的图像显示在液晶屏上时，不透明的条纹会遮挡左眼，通过将左眼和右眼的可视画面分开，使观者看到3D影像。
视察屏障通过光屏障基板来实现，光屏障基板包括玻璃基板、金属层、绝缘层和透明像素电极层，目前3D光屏障基板的制作一般采用道掩膜工艺完成，使用三个不同的掩膜版，通过三次光刻工艺，以分别对应形成金属层、绝缘层、透明像素电极的图形。
因此，现有的光屏障基板制备工艺繁琐，制备效率较低，制备成本较高。
发明内容
（一）要解决的技术问题
本发明要解决的技术问题是如何降低光屏障基板制备工艺中工序的繁琐性和高成本，以提高光屏障基板的制备效率。
（二）技术方案
为了解决上述技术问题，本发明提供一种光屏障基板的制备方法，其中，该制备方法包括如下步骤：
通过第一次构图工艺，在衬底上形成金属电极图形；
在衬底及金属电极图形上方形成绝缘层薄膜；
使用半色调掩膜技术，通过第二次构图工艺，在绝缘层上形成金属电极过孔，以及在绝缘层上形成金属电极与外部IC连线所需的沟道图形；
在形成所述金属电极过孔和沟道图形的衬底上，形成透明电极层图形。
（三）有益效果
上述技术方案所提供的光屏障基板制备方法，借助于半色调掩膜版和灰化工艺，使得绝缘层和透明电极层的形成由现有技术中的两道掩膜工艺减少为一道掩膜工艺，工艺得到了简化，制备效率得到提高，并且减少了一块掩膜版的使用，降低了光屏障基板的制备成本。
附图说明
图1至图8是本发明实施例光屏障基板的制备方法中各个步骤所制得的光屏障基板的平面图示；其中，图1至图8中，(a)图为通过金属电极的过孔处平面图示，(b)图为金属电极与外部IC的连线处平面图示。
其中，1：衬底；2：金属层薄膜；3：绝缘层薄膜；4-1：第一光刻胶；4-2：第二光刻胶；5：透明电极层；6：过孔；7：沟道图形。具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
为了解决现有技术中通过三道掩膜工艺制备光屏障基板时工艺繁琐、效率低、成本高等问题，本发明提供了一种制备光屏障基板的两道掩膜工艺，以简化制备工艺，提高制备效率，降低制备成本。
本实施例中所提供的光屏障基板制备方法包括以下步骤：
S1：形成金属电极图形
参照图1至图2所示，通过第一次构图工艺，在衬底1上形成金属电极图形。
其中，衬底1可以为玻璃或塑料等，构图工艺包括曝光、灰化、显影、刻蚀等操作。
具体地，首先在所述衬底1上形成一层连续的金属层薄膜2，在所述金属层薄膜2上涂覆一层第一光刻胶4-1，通过常规掩膜版对金属层薄膜2上方的第一光刻胶4-1进行曝光、显影处理，保留金属电极图形区域上方对应的光刻胶，去除其他区域的光刻胶；然后采用第一次刻蚀工艺，刻蚀掉未被光刻胶保护的金属层薄膜，保留光刻胶所保护的金属层区域，即金属电极图形，此时，金属电极过孔区域对应的图形如图1中（a）所示，金属电极与外部IC连线处对应的图形如图1中（b）所示；最后去除金属电极图形上方的光刻胶，形成金属电极图形，此时，金属电极过孔区域对应的图形如图2中（a）所示，金属电极与外部IC连线处对应的图形如图2中（b）所示。
S2：形成金属电极过孔和金属电极与外部IC连线所需的沟道图形
参照图3和图4所示，在衬底1及金属电极图形上方形成绝缘层3，通过第二次构图工艺在绝缘层3上形成金属电极过孔和金属电极与外部IC连线所需的沟道图形。
具体地，首先在衬底1及步骤S1中形成的金属电极图形上方形成一层绝缘层薄膜3，在绝缘层薄膜3上方形成一层第二光刻胶4-2，利用半色调掩膜版对第二光刻胶4-2曝光，半色调掩膜版即其上部分区域为遮光区域，部分区域为半透光区域，剩余部分区域为全透光区域，半色调掩膜版曝光之后的第二光刻胶4-2在显影之后，金属电极过孔区域对应的第二光刻胶完全去除，金属电极与外部IC连线区域对应的第二光刻胶部分去除，即去掉了一定厚度，保留了一定厚度，剩余区域的第二光刻胶全部保留，此时，金属电极过孔区域对应的图形如图3中（a）所示，金属电极与外部IC连线处对应的图形如图3中（b）所示；然后通过第二次刻蚀工艺，在第二光刻胶完全去除区域刻蚀掉绝缘层，形成金属电极过孔6，此时，金属电极过孔区域对应的图形如图4中（a）所示，金属电极与外部IC连线处对应的图形如图4中（b）所示。
参照图5和图6所示，在金属电极过孔6形成之后，进行灰化工艺和第三次刻蚀工艺，在绝缘层3上形成金属电极与外部IC连线的沟道图像7。
具体地，通过灰化工艺，将剩余的第二光刻胶4-2的部分厚度和部分区域去除，因为灰化工艺是利用氧和光刻胶反应，以去除光刻胶，所以各个区域的光刻胶去除厚度是一致的，该步骤中，以暴露出金属电极与外部IC连线区域对应的绝缘层为基准，将金属电极与外部IC连线区域对应的绝缘层上方的第二光刻胶去除，同时去除掉过孔处的第二光刻胶的部分区域以及其他区域第二光刻胶的部分厚度，此时，金属电极过孔区域对应的图形如图5中（a）所示，金属电极与外部IC连线处对应的图形如图5中（b）所示；接下来，通过第三次刻蚀工艺，刻蚀掉金属电极与外部IC连线区域对应的绝缘层，形成沟道图形7，然后去除剩余的第二光刻胶；其中，形成沟道图形7之后，金属电极过孔区域对应的图形如图6中（a）所示，金属电极与外部IC连线处对应的图形如图6中（b）所示。
S3：形成透明电极层
参照图7和图8所示，在步骤S2之后，在形成所述金属电极过孔和沟道图形的衬底形成透明电极层5。
具体地，透明电极层5用于形成像素电极，其材质可以为ITO（氧化铟锡）或IZO（氧化铟锌），此时，金属电极过孔区域对应的图形如图7中（a）所示，金属电极与外部IC连线处对应的图形如图7中（b）所示。
透明电极层5形成之后，通过研磨工艺使光屏障基板表面平整。在研磨工艺中，使用化学机械的研磨方式，将非过孔和非沟道图形区域的绝缘层上方的透明电极层去除，同时研磨掉部分绝缘层和透明电极层，以减小光屏障基板的厚度。
化学机械研磨是一个移除制程，它借着结合化学反应和机械研磨达到其目的。化学机械研磨的原理是将晶圆置在承载体与一表面承载抛光垫的旋转工作台之间，同时浸在含有悬浮磨粒、氧化剂、活化剂的酸性或碱性溶液，晶圆相对于抛光垫运动，在化学蚀刻与磨削两个材料移除机制交互作用下达成平坦化。
通常化学机械研磨被应用在半导体薄膜制程中，利用它来剥除薄膜使得表面更加平滑和更加平坦，也可应用在半导体的金属化制程中，用来移除在其表面大量的金属薄膜以在介电质薄膜中形成联机的栓塞或是金属线。当晶圆从单晶硅晶棒被切下来后，就有很多的制程步骤被用来准备平坦的、光亮的以及无缺陷的晶圆表面以满足集成电路的制程所需，而化学机械研磨制程通常被用在晶圆生产的最后一道步骤，它可以使晶圆平坦化，并且可以从表面完全消除晶圆锯切步骤所引起的表面缺陷。当硅单晶棒被锯成薄片，在锯开的过程中在晶圆的两面会留有锯痕，必须除去，晶圆然后放在一抛光板上，用蜡和真空固定住，抛光板再放在抛光机上将晶圆一面磨成像镜子一样，才可以开始进入制作集成电路与组件的制程。
以上，即完成了本实施例所需要制备的光屏障基板，由于借助了半色调掩膜版和灰化工艺，使得绝缘层和透明电极层的形成由现有技术中的两道掩膜工艺减少为一道掩膜工艺，工艺得到了简化，制备效率得到提高，并且减少了一块掩膜版的使用，降低了光屏障基板的制备成本。本发明制备的光屏障基板，可以用于将金属电极与外部IC相连，金属电极通过过孔，将信号电压传输给透明导电电极，从而控制像素电极电压，以控制液晶的翻转，由于像素电极在各条金属线间跨过，因此需通过绝缘层将金属层和透明像素电极绝缘。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本发明的保护范围。

Claims (5)

1.一种光屏障基板的制备方法，其特征在于，该制备方法包括如下步骤：
使用常规掩膜版，通过第一次构图工艺，在衬底上形成金属电极图形；
在衬底及金属电极图形上方形成绝缘层薄膜；
使用半色调掩膜技术，通过第二次构图工艺，在绝缘层上形成台阶状金属电极过孔，以及在绝缘层上形成金属电极与外部IC连线所需的沟道图形；包括：在绝缘层上方形成一层光刻胶，利用半色调掩膜版对光刻胶曝光、显影之后，待形成的金属电极过孔区域对应的光刻胶完全去除，金属电极与外部IC连线区域对应的光刻胶部分去除，剩余区域的光刻胶全部保留；采用第二次刻蚀工艺，在光刻胶完全去除区域刻蚀掉绝缘层，形成金属电极过孔；通过灰化工艺，去除半色调掩膜版曝光、显影后的光刻胶的部分厚度和部分区域，暴露出金属电极与外部IC连线区域对应的绝缘层；采用第三次刻蚀工艺，刻蚀掉金属电极与外部IC连线区域对应的绝缘层，形成沟道图形，同时去除剩余的光刻胶；
在所述金属电极过孔和沟道图形上，形成透明电极层图形，包括：在与金属电极过孔对应的金属电极上方，以及与沟道图形对应的绝缘层上方，形成透明电极层，采用研磨工艺，将光屏障基板上表面研磨为水平表面，同时实现非过孔和非沟道区域的绝缘层上方的透明电极层被去除，形成透明电极层图形。
2.如权利要求1所述的光屏障基板的制备方法，其特征在于，所述步骤“通过第一次构图工艺，在衬底上形成金属电极图形”包括如下子步骤：
在所述衬底上形成一层连续的金属层薄膜；
在所述金属层薄膜上涂覆一层光刻胶；
通过常规掩膜版对金属层薄膜上方的光刻胶进行曝光、显影处理，保留待形成金属电极图形区域上方对应的光刻胶，去除其他区域的光刻胶；
采用第一次刻蚀工艺，刻蚀掉未被光刻胶保护的金属层薄膜，去除金属电极图形上方的光刻胶，形成所述金属电极图形。
3.如权利要求1所述的光屏障基板的制备方法，其特征在于，采用研磨工艺去除绝缘层上方的透明电极层时，研磨掉部分绝缘层和透明电极层，以减小光屏障基板的厚度。
4.如权利要求1所述的光屏障基板的制备方法，其特征在于，所述研磨工艺为化学机械研磨工艺。
5.如权利要求1-4中任一项所述的光屏障基板的制备方法，其特征在于，所述透明电极层的材质为ITO或IZO。
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