CN103871896A - 半导体结构和制造方法 - Google Patents
半导体结构和制造方法 Download PDFInfo
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- CN103871896A CN103871896A CN201310628671.8A CN201310628671A CN103871896A CN 103871896 A CN103871896 A CN 103871896A CN 201310628671 A CN201310628671 A CN 201310628671A CN 103871896 A CN103871896 A CN 103871896A
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- drain region
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- H01L29/772—Field effect transistors
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- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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Abstract
Description
Claims (25)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US13/717,235 | 2012-12-17 | ||
US13/717,235 US8877604B2 (en) | 2012-12-17 | 2012-12-17 | Device structure with increased contact area and reduced gate capacitance |
Publications (2)
Publication Number | Publication Date |
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CN103871896A true CN103871896A (zh) | 2014-06-18 |
CN103871896B CN103871896B (zh) | 2017-03-01 |
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CN201310628671.8A Expired - Fee Related CN103871896B (zh) | 2012-12-17 | 2013-11-29 | 半导体结构和制造方法 |
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US (2) | US8877604B2 (zh) |
CN (1) | CN103871896B (zh) |
Cited By (3)
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CN109216459A (zh) * | 2017-06-30 | 2019-01-15 | 台湾积体电路制造股份有限公司 | 用于制造半导体器件的方法 |
CN110024104A (zh) * | 2016-12-30 | 2019-07-16 | 英特尔公司 | 用于实现电容减小和令人满意的接触电阻的接触架构 |
CN111901643A (zh) * | 2020-06-20 | 2020-11-06 | 河北广电无线传媒有限公司 | 一种高可靠性iptv机顶盒 |
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US9034701B2 (en) | 2012-01-20 | 2015-05-19 | International Business Machines Corporation | Semiconductor device with a low-k spacer and method of forming the same |
US9029208B2 (en) * | 2012-11-30 | 2015-05-12 | International Business Machines Corporation | Semiconductor device with replacement metal gate and method for selective deposition of material for replacement metal gate |
US9035365B2 (en) * | 2013-05-02 | 2015-05-19 | International Business Machines Corporation | Raised source/drain and gate portion with dielectric spacer or air gap spacer |
FR3012258A1 (fr) * | 2013-10-23 | 2015-04-24 | St Microelectronics Crolles 2 | Procede de realisation de transistors nmos et pmos sur un substrat du type soi, en particulier fdsoi, et circuit integre correspondant |
US9876110B2 (en) | 2014-01-31 | 2018-01-23 | Stmicroelectronics, Inc. | High dose implantation for ultrathin semiconductor-on-insulator substrates |
US9640656B2 (en) * | 2014-04-04 | 2017-05-02 | Micron Technology, Inc. | Transistors having strained channel under gate in a recess |
US9368591B2 (en) * | 2014-07-18 | 2016-06-14 | Globalfoundries Inc. | Transistors comprising doped region-gap-doped region structures and methods of fabrication |
US9768254B2 (en) * | 2015-07-30 | 2017-09-19 | International Business Machines Corporation | Leakage-free implantation-free ETSOI transistors |
US9735173B1 (en) | 2016-03-17 | 2017-08-15 | International Business Machines Corporation | Reduced parasitic capacitance and contact resistance in extremely thin silicon-on-insulator (ETSOI) devices due to wrap-around structure of source/drain regions |
US9837407B1 (en) | 2016-09-06 | 2017-12-05 | International Business Machines Corporation | Semiconductor device with increased source/drain area |
US11316026B2 (en) | 2018-07-31 | 2022-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Recessed channel structure in FDSOI |
US11355620B2 (en) * | 2018-10-31 | 2022-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET device and method of forming same |
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CN103871896B (zh) | 2017-03-01 |
US20140167164A1 (en) | 2014-06-19 |
US9385231B2 (en) | 2016-07-05 |
US8877604B2 (en) | 2014-11-04 |
US20150060944A1 (en) | 2015-03-05 |
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