CN103871466B - 使用可变电阻元件的非易失性存储器及其相关的驱动方法 - Google Patents

使用可变电阻元件的非易失性存储器及其相关的驱动方法 Download PDF

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Publication number
CN103871466B
CN103871466B CN201310675018.7A CN201310675018A CN103871466B CN 103871466 B CN103871466 B CN 103871466B CN 201310675018 A CN201310675018 A CN 201310675018A CN 103871466 B CN103871466 B CN 103871466B
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China
Prior art keywords
write
memory cell
circulation
memory
checking
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CN201310675018.7A
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Chinese (zh)
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CN103871466A (zh
Inventor
李升妍
李永宅
金甫根
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
CN201310675018.7A 2012-12-11 2013-12-11 使用可变电阻元件的非易失性存储器及其相关的驱动方法 Active CN103871466B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0143772 2012-12-11
KR1020120143772A KR102030330B1 (ko) 2012-12-11 2012-12-11 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법

Publications (2)

Publication Number Publication Date
CN103871466A CN103871466A (zh) 2014-06-18
CN103871466B true CN103871466B (zh) 2017-09-22

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Country Link
US (1) US9001560B2 (https=)
JP (1) JP5837916B2 (https=)
KR (1) KR102030330B1 (https=)
CN (1) CN103871466B (https=)

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KR20160044847A (ko) * 2014-10-16 2016-04-26 에스케이하이닉스 주식회사 저항변화 메모리 장치, 이를 위한 읽기쓰기 회로부 및 동작 방법
US9312001B1 (en) * 2015-02-17 2016-04-12 Winbond Electronics Corp. Writing and verifying circuit for a resistive memory and method for writing and verifying a resistive memory
US20170308327A1 (en) * 2016-04-22 2017-10-26 Hewlett Packard Enterprise Development Lp Extension Write Buffering
TWI665672B (zh) * 2016-09-13 2019-07-11 東芝記憶體股份有限公司 Semiconductor memory device
WO2018063207A1 (en) * 2016-09-29 2018-04-05 Intel Corporation Resistive random access memory cell
KR102630116B1 (ko) * 2016-10-18 2024-01-29 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
US10395738B2 (en) 2017-11-30 2019-08-27 Micron Technology, Inc. Operations on memory cells
KR102641097B1 (ko) * 2018-12-31 2024-02-27 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 프로그램 방법
KR20220035703A (ko) * 2020-09-14 2022-03-22 삼성전자주식회사 데이터 기입을 위한 저항성 메모리 장치 및 이의 동작 방법
CN115240734A (zh) * 2022-08-08 2022-10-25 中国科学院半导体研究所 阻变随机存储器的控制方法和控制系统
US12603140B2 (en) 2024-06-26 2026-04-14 Macronix International Co., Ltd. Soft programming method and erasing method for memory device

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TW338165B (en) 1996-09-09 1998-08-11 Sony Co Ltd Semiconductor nand type flash memory with incremental step pulse programming
JP2001067884A (ja) * 1999-08-31 2001-03-16 Hitachi Ltd 不揮発性半導体記憶装置
KR100674997B1 (ko) 2005-10-15 2007-01-29 삼성전자주식회사 상 변화 메모리 장치 및 상 변화 메모리 장치의 독출 동작제어방법
KR20110044535A (ko) * 2009-10-23 2011-04-29 삼성전자주식회사 비휘발성 메모리 장치, 이를 포함하는 저장 시스템 및 이의 구동 방법
JP2008084485A (ja) 2006-09-28 2008-04-10 Toshiba Corp 不揮発性半導体記憶装置及びデータ読出方法
KR100801082B1 (ko) * 2006-11-29 2008-02-05 삼성전자주식회사 멀티 레벨 가변 저항 메모리 장치의 구동 방법 및 멀티레벨 가변 저항 메모리 장치
JP5188328B2 (ja) * 2008-08-29 2013-04-24 株式会社日立製作所 半導体装置
KR101423612B1 (ko) 2008-09-16 2014-07-25 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 동작 방법, 그리고 그것을포함하는 메모리 시스템
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KR101532584B1 (ko) * 2009-01-30 2015-06-30 삼성전자주식회사 비휘발성 메모리 장치, 및 그의 프로그램 방법
JP5233815B2 (ja) * 2009-04-22 2013-07-10 ソニー株式会社 抵抗変化型メモリデバイスおよびその動作方法

Also Published As

Publication number Publication date
KR20140075438A (ko) 2014-06-19
JP2014116064A (ja) 2014-06-26
US9001560B2 (en) 2015-04-07
JP5837916B2 (ja) 2015-12-24
KR102030330B1 (ko) 2019-10-10
CN103871466A (zh) 2014-06-18
US20140160831A1 (en) 2014-06-12

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