CN103869635A - 一种去除光刻胶的清洗液 - Google Patents
一种去除光刻胶的清洗液 Download PDFInfo
- Publication number
- CN103869635A CN103869635A CN201210528267.9A CN201210528267A CN103869635A CN 103869635 A CN103869635 A CN 103869635A CN 201210528267 A CN201210528267 A CN 201210528267A CN 103869635 A CN103869635 A CN 103869635A
- Authority
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- China
- Prior art keywords
- cleaning fluid
- cleaning
- ether
- ammonium hydroxide
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000004140 cleaning Methods 0.000 title claims abstract description 52
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 30
- 239000007788 liquid Substances 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 10
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 9
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 239000012530 fluid Substances 0.000 claims description 35
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 14
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 12
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical group OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 8
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 5
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical compound O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 4
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 4
- 150000003457 sulfones Chemical class 0.000 claims description 4
- 150000003462 sulfoxides Chemical class 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical group COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-WHZQZERISA-N D-aldose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-WHZQZERISA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-IVMDWMLBSA-N D-allopyranose Chemical compound OC[C@H]1OC(O)[C@H](O)[C@H](O)[C@@H]1O WQZGKKKJIJFFOK-IVMDWMLBSA-N 0.000 claims description 2
- LKDRXBCSQODPBY-JDJSBBGDSA-N D-allulose Chemical compound OCC1(O)OC[C@@H](O)[C@@H](O)[C@H]1O LKDRXBCSQODPBY-JDJSBBGDSA-N 0.000 claims description 2
- FBPFZTCFMRRESA-KAZBKCHUSA-N D-altritol Chemical compound OC[C@@H](O)[C@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KAZBKCHUSA-N 0.000 claims description 2
- FBPFZTCFMRRESA-ZXXMMSQZSA-N D-iditol Chemical compound OC[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-ZXXMMSQZSA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 claims description 2
- HMFHBZSHGGEWLO-SOOFDHNKSA-N D-ribofuranose Chemical compound OC[C@H]1OC(O)[C@H](O)[C@@H]1O HMFHBZSHGGEWLO-SOOFDHNKSA-N 0.000 claims description 2
- ZAQJHHRNXZUBTE-NQXXGFSBSA-N D-ribulose Chemical compound OC[C@@H](O)[C@@H](O)C(=O)CO ZAQJHHRNXZUBTE-NQXXGFSBSA-N 0.000 claims description 2
- UNXHWFMMPAWVPI-QWWZWVQMSA-N D-threitol Chemical compound OC[C@@H](O)[C@H](O)CO UNXHWFMMPAWVPI-QWWZWVQMSA-N 0.000 claims description 2
- ZAQJHHRNXZUBTE-UHFFFAOYSA-N D-threo-2-Pentulose Natural products OCC(O)C(O)C(=O)CO ZAQJHHRNXZUBTE-UHFFFAOYSA-N 0.000 claims description 2
- YTBSYETUWUMLBZ-QWWZWVQMSA-N D-threose Chemical compound OC[C@@H](O)[C@H](O)C=O YTBSYETUWUMLBZ-QWWZWVQMSA-N 0.000 claims description 2
- ZAQJHHRNXZUBTE-WUJLRWPWSA-N D-xylulose Chemical compound OC[C@@H](O)[C@H](O)C(=O)CO ZAQJHHRNXZUBTE-WUJLRWPWSA-N 0.000 claims description 2
- 241000360590 Erythrites Species 0.000 claims description 2
- UNXHWFMMPAWVPI-UHFFFAOYSA-N Erythritol Natural products OCC(O)C(O)CO UNXHWFMMPAWVPI-UHFFFAOYSA-N 0.000 claims description 2
- 229930091371 Fructose Natural products 0.000 claims description 2
- 239000005715 Fructose Substances 0.000 claims description 2
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 2
- LKDRXBCSQODPBY-AMVSKUEXSA-N L-(-)-Sorbose Chemical compound OCC1(O)OC[C@H](O)[C@@H](O)[C@@H]1O LKDRXBCSQODPBY-AMVSKUEXSA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-VSOAQEOCSA-N L-altropyranose Chemical compound OC[C@@H]1OC(O)[C@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-VSOAQEOCSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- JVWLUVNSQYXYBE-UHFFFAOYSA-N Ribitol Natural products OCC(C)C(O)C(O)CO JVWLUVNSQYXYBE-UHFFFAOYSA-N 0.000 claims description 2
- PYMYPHUHKUWMLA-LMVFSUKVSA-N Ribose Natural products OC[C@@H](O)[C@@H](O)[C@@H](O)C=O PYMYPHUHKUWMLA-LMVFSUKVSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 2
- HMFHBZSHGGEWLO-UHFFFAOYSA-N alpha-D-Furanose-Ribose Natural products OCC1OC(O)C(O)C1O HMFHBZSHGGEWLO-UHFFFAOYSA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-PHYPRBDBSA-N alpha-D-galactose Chemical compound OC[C@H]1O[C@H](O)[C@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-PHYPRBDBSA-N 0.000 claims description 2
- SRBFZHDQGSBBOR-LECHCGJUSA-N alpha-D-xylose Chemical compound O[C@@H]1CO[C@H](O)[C@H](O)[C@H]1O SRBFZHDQGSBBOR-LECHCGJUSA-N 0.000 claims description 2
- PYMYPHUHKUWMLA-WDCZJNDASA-N arabinose Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)C=O PYMYPHUHKUWMLA-WDCZJNDASA-N 0.000 claims description 2
- PYMYPHUHKUWMLA-UHFFFAOYSA-N arabinose Natural products OCC(O)C(O)C(O)C=O PYMYPHUHKUWMLA-UHFFFAOYSA-N 0.000 claims description 2
- SRBFZHDQGSBBOR-UHFFFAOYSA-N beta-D-Pyranose-Lyxose Natural products OC1COC(O)C(O)C1O SRBFZHDQGSBBOR-UHFFFAOYSA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 claims description 2
- 235000009508 confectionery Nutrition 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- 229940113088 dimethylacetamide Drugs 0.000 claims description 2
- UNXHWFMMPAWVPI-ZXZARUISSA-N erythritol Chemical compound OC[C@H](O)[C@H](O)CO UNXHWFMMPAWVPI-ZXZARUISSA-N 0.000 claims description 2
- NKAWWXQVDJITSK-UHFFFAOYSA-M ethyl-(hydroxymethyl)-dimethylazanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CO NKAWWXQVDJITSK-UHFFFAOYSA-M 0.000 claims description 2
- FBPFZTCFMRRESA-GUCUJZIJSA-N galactitol Chemical compound OC[C@H](O)[C@@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-GUCUJZIJSA-N 0.000 claims description 2
- 229930182830 galactose Natural products 0.000 claims description 2
- 239000008103 glucose Substances 0.000 claims description 2
- 125000002951 idosyl group Chemical class C1([C@@H](O)[C@H](O)[C@@H](O)[C@H](O1)CO)* 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- BJHIKXHVCXFQLS-PQLUHFTBSA-N keto-D-tagatose Chemical compound OC[C@@H](O)[C@H](O)[C@H](O)C(=O)CO BJHIKXHVCXFQLS-PQLUHFTBSA-N 0.000 claims description 2
- 229960004194 lidocaine Drugs 0.000 claims description 2
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- HEBKCHPVOIAQTA-ZXFHETKHSA-N ribitol Chemical compound OC[C@H](O)[C@H](O)[C@H](O)CO HEBKCHPVOIAQTA-ZXFHETKHSA-N 0.000 claims description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 2
- JAJRRCSBKZOLPA-UHFFFAOYSA-M triethyl(methyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(CC)CC JAJRRCSBKZOLPA-UHFFFAOYSA-M 0.000 claims description 2
- 239000000811 xylitol Substances 0.000 claims description 2
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 2
- 229960002675 xylitol Drugs 0.000 claims description 2
- 235000010447 xylitol Nutrition 0.000 claims description 2
- 229960003487 xylose Drugs 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- -1 alcohol amine Chemical class 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229920005862 polyol Polymers 0.000 abstract 1
- 150000003077 polyols Chemical class 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 14
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000005764 inhibitory process Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C11D2111/22—
Abstract
本发明公开了一种低蚀刻性的适用与较厚光刻胶清洗的清洗液及其清洗方法。这种低蚀刻性的光刻胶清洗液含有季铵氢氧化物,醇胺,C4-C6多元醇以及溶剂。这种低蚀刻性的光刻胶清洗剂能够高效的去除半导体晶圆上的光刻胶,同时对于基材基本没有攻击如金属铝、铜等,在半导体晶圆清洗等领域具有良好的应用前景。
Description
技术领域
本发明涉及一种去除光刻胶的清洗液。
背景技术
在通常的半导体制造工艺中,通过在一些材料的表面上形成光刻胶的掩膜,曝光后进行图形转移,在得到需要的图形之后,进行下一道工序之前,需要剥去残留的光刻胶。在这个过程中要求完全除去不需要的光刻胶,同时不能腐蚀任何基材。例如,在晶圆微球植入工艺(bumping technology)中,需要光刻胶形成掩膜,该掩膜在微球成功植入后同样需要去除,但由于该光刻胶较厚,完全去除常较为困难。改善去除效果较为常用的方法是采用延长浸泡时间、提高浸泡温度和采用更富有攻击性的溶液,但这常会造成晶片基材的腐蚀和微球的腐蚀,从而导致晶片良率的显著降低。
目前,光刻胶清洗液主要由极性有机溶剂、强碱和/或水等组成,通过将半导体晶片浸入清洗液中或者利用清洗液冲洗半导体晶片,去除半导体晶片上的光刻胶。如WO2006/056298A1利用由四甲基氢氧化铵(TMAH)、二甲基亚砜(DMSO),乙二醇(EG)和水组成碱性清洗液,用于清洗铜基板的光刻胶,同时对金属铜基本无腐蚀,但其对金属铝有腐蚀;又例如US5529887由氢氧化钾(KOH)、烷基二醇单烷基醚、水溶性氟化物和水等组成碱性清洗液,将晶片浸入该清洗液中,在40~90℃下除去金属和电介质基材上的厚膜光刻胶。其对半导体晶片基材的腐蚀较高。
由此可见,寻找更为有效抑制金属腐蚀抑制方法和高效的光刻胶去除能力是该类光刻胶清洗液努力改进的优先方向。
发明内容
为了解决上述技术问题,本发明提供了一种可以对厚膜光刻胶清洗能力强且对半导体晶片图案和基材腐蚀性较低的光刻胶清洗剂。该清洗液可以解决的技术问题就是现有的厚膜光刻胶清洗液存在的清洗能力不足或者对半导体晶片图案和基材腐蚀性较强的缺陷。
本发明解决上述技术问题所采用的技术方案是提供一种用于光刻胶清洗的清洗液,该清洗液包含季铵氢氧化物,醇胺,C4-C6多元醇,溶剂。
其中,季铵氢氧化物包括四甲基氢氧化铵、四乙基氢氧化铵、四丙基氢氧化铵、四丁基氢氧化铵、甲基三乙基氢氧化铵和羟乙基三甲基氢氧化铵等中的一种或者几种。
其中,醇胺为单乙醇胺、二乙醇胺、三乙醇胺、正丙醇胺、异丙醇胺、2-(二乙氨基)乙醇、乙基二乙醇胺和二甘醇胺中的一种或几种。醇胺的存在有利于提高季铵氢氧化物的溶解度。
其中,C4-C6多元醇为选自苏阿糖、阿拉伯糖、木糖、核糖、核酮糖、木酮糖、葡萄糖、甘露糖、半乳糖、塔格糖、阿洛糖、阿卓糖、艾杜糖、塔罗糖、山梨糖、阿洛酮糖、果糖、苏糖醇、赤藓醇、核糖醇、阿拉伯糖醇、木糖醇、塔罗糖醇、山梨醇、甘露醇、艾杜糖醇和半乳糖醇中的一种或者几种。
其中,溶剂可选自亚砜、砜、咪唑烷酮、咪唑啉酮、吡咯烷酮、醇醚、酰胺中的一种或多种。其中,所述的亚砜较佳的为二甲基亚砜;所述的砜较佳的为环丁砜;所述的咪唑烷酮较佳的为1,3-二甲基-2-咪唑烷酮;所述的咪唑啉酮较佳的为1,3-二甲基-2-咪唑啉酮;所述的吡咯烷酮较佳的为N-甲基吡咯烷酮、N-乙基吡咯烷酮、N-羟乙基吡咯烷酮和N-环己基吡咯烷酮;所述的酰胺较佳的为二甲基甲酰胺、二甲基乙酰胺;所述的醇醚较佳的为乙二醇醚和丙二醇醚;所述的乙二醇醚较佳的为二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丁醚;所述的丙二醇醚较佳的为二丙二醇单甲醚、二丙二醇单乙醚。
其中,季铵氢氧化物的含量为0.1-10wt%(质量百分比),醇胺的含量为0.1-30wt%,C4-C6多元醇的含量为0.1-10wt%,溶剂的含量为45-95wt%。
上述清洗液还可进一步含有水。水的存在有利于丙烯酸树脂类光刻胶去除。含量为0.1-10wt%。
本发明中的低蚀刻性光刻胶清洗液,可以在25℃至90℃下清洗光刻胶。具体方法如下:将含有光刻胶的晶片浸入本发明中的低蚀刻性的光刻胶清洗剂,在25℃至90℃下浸泡合适的时间后,取出洗涤后用高纯氮气吹干。
本发明所具有的技术效果在于:本发明的清洗液具有光刻胶去除能力强;对金属和非金属的腐蚀抑制能力强;具有较大的操作窗口。
具体实施方式
下面通过具体实施例进一步阐述本发明的优点,但本发明的保护范围不仅仅局限于下述实施例。
按照表1和表2中各实施例以及对比实施例的成分及其比例配制抛光液,混合均匀。
表1本发明实施例1-27的配方
表2本发明对比例4,10,16的配方
效果实施例
为了进一步考察该类清洗液的清洗情况,本发明采用了如下技术手段:即将含有光刻胶的晶片浸入清洗剂中,在25~90℃下利用恒温振荡器以约60转/分的振动频率振荡5~60分钟,然后经去离子水洗涤后用高纯氮气吹干。光刻胶的清洗效果和清洗液对晶片的腐蚀情况如表3所示。
表3对比实施例和部分实施例的晶片清洗情况
腐蚀情况: | ◎基本无腐蚀; | 清洗情况: | ◎完全去除; | |
○略有腐蚀; | ○少量残余; | |||
△中等腐蚀; | △较多残余; | |||
×严重腐蚀。 | ×大量残余。 |
从表3可以看出,本发明的清洗液对光刻胶具有良好的清洗效果,使用温度范围广。另外实施例与对比例的比较可以看出,本发明特定的季铵氢氧化合物,醇胺,溶剂以及水之间具有协同作用,本发明所公开的清洗液对金属和非金属基板等有较好的腐蚀抑制作用,光刻胶去除能力强。
综上,本发明的积极进步效果在于:本发明的清洗液具有光刻胶去除能力强;对金属和非金属的腐蚀抑制能力强;具有较大的操作窗口。
应当理解的是,本发明所述wt%均指的是质量百分含量。
以上对本发明的具体实施例进行了详细描述,但其只是作为范例,本发明并不限制于以上描述的具体实施例。对于本领域技术人员而言,任何对本发明进行的等同修改和替代也都在本发明的范畴之中。因此,在不脱离本发明的精神和范围下所作的均等变换和修改,都应涵盖在本发明的范围内。
Claims (13)
1.一种去除光刻胶的清洗液,其特征在于,包括季铵氢氧化物,醇胺,C4-C6多元醇及溶剂。
2.如权利要求1所述的清洗液,其特征在于,所述的季铵氢氧化物选自四甲基氢氧化铵、四乙基氢氧化铵、四丙基氢氧化铵、四丁基氢氧化铵、甲基三乙基氢氧化铵和羟乙基三甲基氢氧化铵等中的一种或多种。
3.如权利要求1所述的清洗液,其特征在于,所述的醇胺选自单乙醇胺、二乙醇胺、三乙醇胺、正丙醇胺、异丙醇胺、2-(二乙氨基)乙醇、乙基二乙醇胺和二甘醇胺中的一种或多种。
4.如权利要求1所述的清洗液,其特征在于,所述的C4-C6多元醇选自苏阿糖、阿拉伯糖、木糖、核糖、核酮糖、木酮糖、葡萄糖、甘露糖、半乳糖、塔格糖、阿洛糖、阿卓糖、艾杜糖、塔罗糖、山梨糖、阿洛酮糖、果糖、苏糖醇、赤藓醇、核糖醇、阿拉伯糖醇、木糖醇、塔罗糖醇、山梨醇、甘露醇、艾杜糖醇和半乳糖醇中的一种或多种。
5.如权利要求1所述的清洗液,其特征在于,所述的溶剂选自亚砜、砜、咪唑烷酮、咪唑啉酮、吡咯烷酮、醇醚、酰胺中的一种或多种。
6.如权利要求5所述的清洗液,其特征在于,所述的亚砜较佳的为二甲基亚砜;所述的砜较佳的为环丁砜;所述的咪唑烷酮较佳的为1,3-二甲基-2-咪唑烷酮;所述的咪唑啉酮较佳的为1,3-二甲基-2-咪唑啉酮;所述的吡咯烷酮较佳的为N-甲基吡咯烷酮、N-乙基吡咯烷酮、N-羟乙基吡咯烷酮和N-环己基吡咯烷酮;所述的酰胺较佳的为二甲基甲酰胺、二甲基乙酰胺;所述的醇醚较佳的为乙二醇醚和丙二醇醚;所述的乙二醇醚较佳的为二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丁醚;所述的丙二醇醚较佳的为二丙二醇单甲醚、二丙二醇单乙醚中的一种或多种。
7.如权利要求1所述的清洗液,其特征在于,所述的季铵氢氧化物的含量为0.1-10wt%。
8.如权利要求1所述的清洗液,其特征在于,所述的醇胺的含量为0.1-30wt%。
9.如权利要求1所述的清洗液,其特征在于,所述的C4-C6多元醇的含量为0.1-10wt%。
10.如权利要求1所述的清洗液,其特征在于,所述的溶剂的含量为45-95wt%。
11.如权利要求1所述的清洗液,其特征在于,所述的清洗液包括去离子水。
12.如权利要求11所述的清洗液,其特征在于,所述的去离子水的含量为0.1-10wt%。
13.一种使用如权利要求1所述的清洗液清洗光刻胶的方法。
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Families Citing this family (1)
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6440326B1 (en) * | 1998-08-13 | 2002-08-27 | Mitsubishi Gas Chemical Company, Inc. | Photoresist removing composition |
CN101286016A (zh) * | 2007-04-13 | 2008-10-15 | 安集微电子(上海)有限公司 | 低蚀刻性光刻胶清洗剂 |
CN101750914A (zh) * | 2008-12-05 | 2010-06-23 | 安集微电子(上海)有限公司 | 一种光刻胶清洗剂组合物 |
CN102141743A (zh) * | 2010-08-25 | 2011-08-03 | 上海飞凯光电材料股份有限公司 | 具有金属保护的光刻胶剥离液组合物 |
CN102338994A (zh) * | 2010-07-23 | 2012-02-01 | 安集微电子(上海)有限公司 | 一种光刻胶的清洗液 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
CN101578341A (zh) * | 2008-01-07 | 2009-11-11 | 巴斯夫欧洲公司 | 有机涂膜剥离用组合物及剥离有机涂膜的方法 |
-
2012
- 2012-12-10 CN CN201210528267.9A patent/CN103869635A/zh active Pending
-
2013
- 2013-12-03 WO PCT/CN2013/001500 patent/WO2014089908A1/zh active Application Filing
- 2013-12-09 TW TW102145084A patent/TW201422807A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6440326B1 (en) * | 1998-08-13 | 2002-08-27 | Mitsubishi Gas Chemical Company, Inc. | Photoresist removing composition |
CN101286016A (zh) * | 2007-04-13 | 2008-10-15 | 安集微电子(上海)有限公司 | 低蚀刻性光刻胶清洗剂 |
CN101750914A (zh) * | 2008-12-05 | 2010-06-23 | 安集微电子(上海)有限公司 | 一种光刻胶清洗剂组合物 |
CN102338994A (zh) * | 2010-07-23 | 2012-02-01 | 安集微电子(上海)有限公司 | 一种光刻胶的清洗液 |
CN102141743A (zh) * | 2010-08-25 | 2011-08-03 | 上海飞凯光电材料股份有限公司 | 具有金属保护的光刻胶剥离液组合物 |
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CN105505630A (zh) * | 2015-12-07 | 2016-04-20 | 苏州市晶协高新电子材料有限公司 | 一种半导体工艺中用的表面处理剂及方法 |
CN108255027A (zh) * | 2016-12-28 | 2018-07-06 | 安集微电子(上海)有限公司 | 一种光刻胶清洗液 |
CN108255027B (zh) * | 2016-12-28 | 2024-04-12 | 安集微电子(上海)有限公司 | 一种光刻胶清洗液 |
CN110244526A (zh) * | 2018-03-07 | 2019-09-17 | 弗萨姆材料美国有限责任公司 | 光致抗蚀剂剥离剂 |
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