CN103855147A - 一种led灯丝及灯具 - Google Patents

一种led灯丝及灯具 Download PDF

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CN103855147A
CN103855147A CN201410014434.7A CN201410014434A CN103855147A CN 103855147 A CN103855147 A CN 103855147A CN 201410014434 A CN201410014434 A CN 201410014434A CN 103855147 A CN103855147 A CN 103855147A
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Prior art keywords
led
led filament
bonding area
substrate
crystal bonding
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游志
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Shenzhen Refond Optoelectronics Co Ltd
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Shenzhen Refond Optoelectronics Co Ltd
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Priority to PCT/CN2014/073652 priority patent/WO2015103813A1/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Abstract

本发明适用于照明技术领域，提供了一种LED灯丝及灯具，所述LED灯丝包括基板和荧光胶，所述基板中间部分为固晶区，多个由导线电连接的LED芯片设于所述固晶区的正面及背面，各LED芯片两旁均设高于所述导线预定高度的支撑柱，由所述荧光胶完全覆盖固晶区及LED芯片。这样在固晶区的背面（正面）对LED芯片固晶焊线时，其正面（背面）已固焊好的LED芯片及其导线将由支撑柱所保护，则可在不改变现有制程和不另外添加治具的条件下实现基板正反两面固焊LED芯片，如此制成的LED灯丝正反两面可均匀发光，彻底解决了现有灯丝产品正面、背面光色不一致的问题。因而，本LED灯丝可广泛应用于各种灯具。

Description

一种LED灯丝及灯具
技术领域
本发明属于照明技术领域，尤其涉及一种LED灯丝及灯具。
背景技术
目前，LED灯丝产品由BT板或是FR4，金属基板等不透明基板制成，点亮后往往会在基板背面存在暗区，光色一致性差，影响照明效果。
发明内容
本发明实施例的目的在于提供一种LED灯丝，旨在解决现有LED灯丝光色一致性差的问题。
本发明实施例是这样实现的，一种LED灯丝，包括基板和荧光胶，所述基板中间部分为固晶区，多个由导线电连接的LED芯片设于所述固晶区的正面及背面，各LED芯片两旁均设高于所述导线预定高度的支撑柱，由所述荧光胶完全覆盖固晶区及LED芯片。
本发明实施例的另一目的在于提供一种灯具，所述灯具采用上述LED灯丝。
本发明实施例先于基板固晶区的正面及背面设置高于用以连接LED芯片的导线的支撑柱，这样在固晶区的背面（正面）对LED芯片固晶焊线时，其正面（背面）已固焊好的LED芯片及其导线将由支撑柱所保护，则可在不改变现有制程和不另外添加治具的条件下实现基板正反两面固焊LED芯片，如此制成的LED灯丝正反两面可均匀发光，彻底解决了现有灯丝产品正面、背面光色不一致的问题。因而，本LED灯丝可广泛应用于各种灯具。
附图说明
图1是本发明实施例提供的LED灯丝的结构示意图；
图2是图1A-A截面示意图；
图3是图1B-B截面示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
本发明实施例先于基板固晶区的正面及背面设置高于用以连接LED芯片的导线的支撑柱，这样在固晶区的背面（正面）对LED芯片固晶焊线时，其正面（背面）已固焊好的LED芯片及其导线将由支撑柱所保护，则可在不改变现有制程和不另外添加治具的条件下实现基板正反两面固焊LED芯片，如此制成的LED灯丝正反两面可均匀发光，彻底解决了现有灯丝产品正面、背面光色不一致的问题。
以下结合具体实施例对本发明的实现进行详细描述。
如图1～3所示，本发明实施例提供的LED灯丝包括基板1和荧光胶，所述基板1中间部分为固晶区11，多个由导线4电连接的LED芯片3设于所述固晶区11的正面及背面，各LED芯片3两旁均设高于所述导线4预定高度的支撑柱5，由所述荧光胶完全覆盖固晶区11及LED芯片3。其中，所述基板1为不透明硬质基板，如BT板、FR4板、金属板或陶瓷板等。所述支撑柱5可以由透明的或是其它有色塑胶（如热塑或是热固性材质）制成。这样在所述固晶区11的背面（正面）对LED芯片3固晶焊线时，其正面（背面）已固焊好的LED芯片3及其导线4将由支撑柱5所保护，则可在不改变现有制程和不另外添加治具的条件下实现基板正反两面固焊LED芯片3，如此制成的LED灯丝正反两面可均匀发光，彻底解决了现有灯丝产品正面、背面光色不一致的问题。
如图2所示，本发明实施例中所述支撑柱5的横截面呈“H”型，其最高点与所述基板同侧表面的距离d大于0.15mm，且位于所述基板同一侧的支撑柱5高度相同，如此可确保连接所述LED芯片3的导线4位于支撑柱的凹槽50内。另外，所述支撑柱5朝向LED芯片3的侧面均为斜面，如图1、3中的侧面17、18，这有利于出光。
通常，所述LED灯丝既可以是双边单电极，也可以是单边双电极，设计灵活。如图1所示，本实施例提供的LED灯丝采取双边单电极样式，其中所述基板1两端均为焊接区12，所述固晶区11有一端与焊接区12断开，如此可将本LED灯丝的正、负极断开，而且对整个基板破坏较小。当然，所述固晶区11两端均与相应的焊接区12断开亦可。
其中，与所述固晶区11断开的焊接区12设一缺口13，所述固晶区较小端14容置于该缺口13，如图1所示。在此由位于所述焊接区12端部的支撑柱对固晶区较小端14进行定位衔接，使所述固晶区较小端14位于缺口13的中部，且相互平行，从而断开所述LED灯丝的正、负极。这样增强了所述固晶区11与焊接区12的断开处的连接强度，进一步提升本LED灯丝的可靠性。前述基板1嵌在所述支撑柱16中，可以是部分或是全部包裹在塑胶中，如此保证正、负极位置相对稳定，在断开处不易断裂，同时提高了基板1的整体强度。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (9)

1.一种LED灯丝，其特征在于，包括基板和荧光胶，所述基板中间部分为固晶区，多个由导线电连接的LED芯片设于所述固晶区的正面及背面，各LED芯片两旁均设高于所述导线预定高度的支撑柱，由所述荧光胶完全覆盖固晶区及LED芯片。
2.如权利要求1所述的LED灯丝，其特征在于，所述支撑柱的横截面呈“H”型，其最高点与所述基板同侧表面的距离d大于0.15mm。
3.如权利要求1或2所述的LED灯丝，其特征在于，所述支撑柱朝向LED芯片的侧面均为斜面。
4.如权利要求3所述的LED灯丝，其特征在于，所述基板两端均为焊接区，所述固晶区至少有一端与焊接区断开。
5.如权利要求4所述的LED灯丝，其特征在于，与所述固晶区断开的焊接区设一缺口，所述固晶区较小端容置于该缺口。
6.如权利要求5所述的LED灯丝，其特征在于，由位于所述焊接区端部的支撑柱对固晶区较小端进行定位衔接，使之位于所述缺口的中部，从而断开所述LED灯丝的正、负极。
7.如权利要求6所述的LED灯丝，其特征在于，所述基板为金属板、FR4板、BT板或陶瓷板。
8.如权利要求7所述的LED灯丝，其特征在于，所述基板表面镀有银膜或金膜。
9.一种灯具，其特征在于，所述灯具采用如权利要求1～8中任一项所述的LED灯丝。
CN201410014434.7A 2014-01-13 2014-01-13 一种led灯丝及灯具 Pending CN103855147A (zh)

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Cited By (1)

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CN104091880A (zh) * 2014-07-31 2014-10-08 绍兴联同电子科技有限公司 一种超薄高效bt类led灯丝及其制作工艺

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CN106653740B (zh) * 2017-03-13 2019-01-08 浙江鼎鑫工艺品有限公司 一种led灯丝
USD834740S1 (en) 2017-09-29 2018-11-27 Pt. Ho Wah Genting Worklight
EP3874196B1 (en) 2018-10-29 2022-12-28 Signify Holding B.V. Led filament arrangement with heat sink structure
EP3894738B1 (en) 2018-12-13 2022-07-27 Signify Holding B.V. Lighting device with light-emitting filaments

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Application publication date: 20140611