CN103839770A - 一种同时在深沟槽底部和顶部形成图形的工艺方法 - Google Patents
一种同时在深沟槽底部和顶部形成图形的工艺方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 64
- 238000005530 etching Methods 0.000 claims abstract description 23
- 238000006884 silylation reaction Methods 0.000 claims abstract description 23
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 15
- 238000001312 dry etching Methods 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- -1 dimethyl silyl methylamine Chemical compound 0.000 claims description 3
- 229960004194 lidocaine Drugs 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 3
- 229940094989 trimethylsilane Drugs 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 abstract description 15
- 238000002444 silanisation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- 238000004026 adhesive bonding Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000863 Ferronickel Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- JOOMLFKONHCLCJ-UHFFFAOYSA-N N-(trimethylsilyl)diethylamine Chemical compound CCN(CC)[Si](C)(C)C JOOMLFKONHCLCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000029936 alkylation Effects 0.000 description 1
- 238000005804 alkylation reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
本发明公开了一种同时在深沟槽底部和顶部形成图形的工艺方法,包括以下步骤:1提供一需要在深沟槽底部和顶部形成图形的硅片;2光刻胶的涂布和烘烤;3使用具有目标图形的掩膜版进行曝光,形成光刻胶潜影;4用硅烷化剂对上述具有光刻胶潜影的光刻胶进行硅烷基化处理,将潜影图形转化成硅烷基化图形;5以上述硅烷基化图形为掩膜层,干法刻蚀光刻胶,在深沟槽底部和顶部同时形成图形;6以上述硅烷基化图形和剩余光刻胶为掩膜层,刻蚀深沟槽底部和顶部的薄膜层,在深沟槽底部和顶部同时形成该薄膜层的图形。本发明解决了用传统一步光刻法无法同时在深沟槽底部和顶部形成图形的问题,以及两步光刻和刻蚀方法中工艺复杂、成本较高的问题。
Description
技术领域
本发明涉及半导体集成电路制造工艺,尤其涉及一种同时在深沟槽底部和顶部形成图形的工艺方法。
背景技术
在某些具有深沟槽结构的器件中,要求在深沟槽的底部和顶部同时形成图形,如图1所示的三维MEMS(Micro-electromechanical Systems:微电子机械系统)器件中Z方向上的感应器件,需要在深沟槽200的底部和顶部形成磁性薄膜层图形601和602。图2(A)和图2(B)分别是使用正性光刻胶和负性光刻胶一步光刻法的效果示意图,由此可知,无论是使用正性光刻胶还是负性光刻胶,在曝光的过程中,由于DOF(Depthof Focus:焦深)的限制,以及光刻胶对曝光光强的吸收,深沟槽的底部的光刻胶无法获得足够强的光能量进行曝光,因此显影后都无法在深沟槽的底部形成光刻胶图形,因此也就无法通过刻蚀的方法在深沟槽的底部和顶部都形成磁性薄膜层的图形。
为了解决上述问题,有一种可选的方法,即使用两步光刻和两次刻蚀法,其步骤如下:(1)进行第一次涂胶、曝光和显影,在深沟槽底部形成光刻胶图形,(2)以上述光刻胶图形为掩模,刻蚀深沟槽底部磁性薄膜层,在深沟槽200底部形成磁性薄膜层图形601(见图1),(3)进行第二次涂胶、曝光和显影,在深沟槽顶部形成光刻胶图形,(2)以上述光刻胶图形为掩模,刻蚀深沟槽顶部磁性薄膜层,在深沟槽200顶部形成磁性薄膜层图形602(见图1)。由此可知,上述方法分别使用了两次涂胶、两次曝光(同时需使用两块掩膜版)、两次显影和两次刻蚀,虽然能够分别在深沟槽的底部和顶部分别形成所需的磁性薄膜层图形,但工艺复杂,成本较高。
发明内容
本发明要解决的技术问题是提供一种同时在深沟槽底部和顶部形成图形的工艺方法,以解决传统一步光刻法无法同时在深沟槽底部和顶部形成图形的问题,以及两步光刻和刻蚀方法中工艺复杂,成本较高的问题。
为解决上述技术问题,本发明的一种同时在深沟槽底部和顶部形成图形的工艺方法,包括以下步骤:
(1)提供一需要在深沟槽底部和顶部形成图形的硅片;
(2)光刻胶的涂布和烘烤;
(3)使用具有目标图形的掩膜版进行曝光,形成光刻胶潜影;
(4)用硅烷化剂对上述具有光刻胶潜影的光刻胶进行硅烷基化处理,将潜影图形转化成硅烷基化图形;
(5)以上述硅烷基化图形为掩膜层,干法刻蚀光刻胶,在深沟槽底部和顶部同时形成图形;
(6)以上述硅烷基化图形和剩余光刻胶为掩膜层,刻蚀深沟槽底部和顶部的薄膜层,在深沟槽底部和顶部同时形成该薄膜层的图形。
在步骤(1)中,在所述硅片上,已经形成了一深沟槽结构。在所述深沟槽的底部、侧壁和顶部都已生长了一层薄膜层,该薄膜层就是需形成最终图形的薄膜层。所述薄膜层是介质薄膜层,金属硅化物薄膜层,金属薄膜层,或其任意组合。
在步骤(2)中,所述的光刻胶在曝光前不含羟基和羧酸基成分,经曝光后能生成羟基或/和羧酸基成分。所述光刻胶在烘烤以后的厚度为2-100微米;所述光刻胶在烘烤以后的厚度要大到足以完全覆盖所述的深沟槽。所述光刻胶的涂布使用旋涂或喷涂的方式。
在步骤(3)中,所述的曝光光源是波长436纳米的G-line,波长365纳米的I-line,波长248纳米的KrF和波长193纳米的ArF中的任意一种,优选地,所述的曝光光源是波长365纳米的I-line。
在步骤(4)中,所述的硅烷化剂包括六甲基二硅氮烷,四甲基二硅氮烷,二甲基甲硅烷二甲胺,N,N-二乙氨基三甲基硅烷,优选地,所述的硅烷化剂是六甲基二硅氮烷。所述的硅烷基化处理是将步骤(3)所获得的具有目标图形潜影的光刻胶暴露于液态或气态的所述硅烷化剂中,进行化学反应,其反应温度为50-150℃,反应时间为30-300秒。
在步骤(5)中,所述的干法刻蚀是以氧气为主要刻蚀气体的等离子体干法刻蚀,其氧气流量为50-2000标准状态的立方厘米/分钟,源射频功率为100-1500瓦,气体压力为20-2000毫托。
和现有技术相比,本发明具有以下有益效果:本发明通过引进硅烷基化图形层作为刻蚀的掩膜层,从而可以用以氧气为主要刻蚀剂的干法刻蚀来刻蚀沟槽内部的光刻胶,而不管所述光刻胶是否已经曝光,解决了传统一步光刻法中由于底部光刻胶不能进行曝光而无法同时在深沟槽底部和顶部形成图形的问题,同时,本发明的方法通过一次涂胶和曝光、两次刻蚀就可以同时在深沟槽底部和顶部形成所需的薄膜图形,因此也就解决了两步光刻和刻蚀方法中工艺复杂,成本较高的问题。
附图说明
图1是三维MEMS器件中Z方向上的感应器件示意图;
图2(A)是传统正性光刻胶一步光刻法效果示意图;
图2(B)是传统负性光刻胶一步光刻法效果示意图;
图3是本发明的一种同时在深沟槽底部和顶部形成图形的工艺流程图;
图4是本发明的一种同时在深沟槽底部和顶部形成图形的工艺方法流程剖面示意图;其中,图4(A)是本发明方法的步骤(1)完成后的示意图;图4(B)是本发明方法的步骤(2)完成后的示意图;图4(C)是本发明方法的步骤(3)完成后的示意图;图4(D)是本发明方法的步骤(4)完成后的示意图;图4(E)是本发明方法的步骤(5)完成后的示意图;图4(F)是本发明方法的步骤(6)完成后的示意图;
图5是本发明步骤(4)中的烷基化反应的化学方程式。
图中附图标记说明如下:
100-硅片,200-深沟槽,300-薄膜层,301-深沟槽底部的薄膜层图形,302-深沟槽顶部的薄膜层图形,400-光刻胶,401-光刻胶潜影,402-未曝光的光刻胶,403-深沟槽侧壁的光刻胶,500-硅烷基化图形,601-深沟槽底部的磁性薄膜层图形,602-深沟槽顶部的磁性薄膜层图形。
具体实施方式
下面结合附图和实施例对本发明作进一步详细的说明。
本发明的一种同时在深沟槽底部和顶部形成图形的工艺方法,其工艺流程如图3和图4(A)-图4(F)所示,具体包括以下步骤:
(1)如图4(A)所示,提供一需要在深沟槽底部和顶部形成图形的硅片100:在所述硅片100上,已经形成了一深沟槽200结构,所述深沟槽200可以通过光刻和刻蚀的方法形成,且在所述深沟槽200的底部、侧壁和顶部都已生长了一薄膜层300,所述薄膜层300就是需形成最终图形的薄膜层,根据工艺需求,所述薄膜层300可以是介质薄膜层(如二氧化硅、氮化硅、氮氧化硅、锗硅及其组合等),可以是金属硅化物薄膜层(如硅化钨、硅化钴等),可以是金属薄膜层(如铝、金、银、镍铁及其组合等),也可以是以上所述薄膜层的任意组合。
(2)如图4(B)所示,光刻胶400的涂布和烘烤;所述的光刻胶400在曝光前不含羟基(OH)和羧酸基(COOH)成分,经曝光后能生成羟基(OH)或/和羧酸基(COOH)成分,所述光刻胶400在烘烤以后的厚度为2-100微米,所述光刻胶400在烘烤以后的厚度要大到足以完全覆盖所述的深沟槽200。所述光刻胶400的涂布可以使用旋涂或喷涂的方式,当所述光刻胶400的厚度较大时(如大于20微米),一般使用喷涂的方式。
(3)如图4(C)所示,使用具有目标图形的掩膜版(图中未示出)进行曝光,形成光刻胶潜影401:所述曝光的曝光光源是波长436纳米的G-line,波长365纳米的I-line,波长248纳米的KrF和波长193纳米的ArF中的任意一种,优选地,本实施例使用的曝光光源是波长365纳米的I-line。
(4)如图4(D)所示,用硅烷化剂对上述具有光刻胶潜影401的光刻胶400进行硅烷基化处理,将潜影图形转化成硅烷基化图形500;所述的硅烷化剂包括六甲基二硅氮烷(HMDS),四甲基二硅氮烷(TMDS),二甲基甲硅烷二甲胺(DMSDMA),N,N-二乙氨基三甲基硅烷(TMSDEA),优选地,本实施例中采用的硅烷化剂是六甲基二硅氮烷(HMDS),所述光刻胶400经步骤(3)的曝光后,在曝光区域因发生光化学反应而生成羟基(OH)或/和羧酸基(COOH)成分,因此光刻胶潜影401中的羟基或羧酸基中的活性氢成分将和所述硅烷化剂发生烷基化反应,其化学反应方程式如图5所示,所述的硅烷基化处理就是将步骤(3)所获得的具有光刻胶潜影401的光刻胶400暴露于液态或气态的所述的硅烷化剂中,进行化学反应(即烷基化反应,化学反应方程式如图5所示),使光刻胶潜影401转化成硅烷基化图形500,其反应温度为50-150℃,反应时间为30-300秒。
(5)如图4(E)所示,以上述硅烷基化图形500为掩膜层,干法刻蚀未曝光的光刻胶402(如图4(D)中所示),在深沟槽200底部和顶部同时形成图形:所述的干法刻蚀是以氧气为主要刻蚀气体的等离子体干法刻蚀,其氧气流量为50-2000标准状态的立方厘米/分钟,源射频功率为100-1500瓦,气体压力为20-2000毫托,步骤(4)所形成的硅烷基化图形500,在以氧气为主要刻蚀气体的等离子体干法刻蚀中,对未曝光的光刻胶402具有较高的刻蚀选择比,因此可以作为所述干法刻蚀的掩膜层来刻蚀未曝光的光刻胶402,刻蚀完成后在深沟槽侧壁的光刻胶403得以保留。
(6)如图4(F)所示,以上述硅烷基化图形500和深沟槽侧壁的光刻胶403为掩膜层,刻蚀薄膜层300,形成深沟槽底部的薄膜层图形301和深沟槽顶部的薄膜层图形302:根据薄膜层300的材料不同,再结合刻蚀选择比,可以选择不同的刻蚀方法,包括干法刻蚀和湿法刻蚀,例如,当薄膜层300为金属铝薄膜时,可以使用以氯气为主要刻蚀气体(还包含一些辅助气体,如三氯化硼,四氟化碳,氮气等)的等离子体干法刻蚀。在刻蚀薄膜层300之后,再去除烷基化图形500和深沟槽侧壁的光刻胶403,就可以形成深沟槽底部的薄膜层图形301和深沟槽顶部的薄膜层图形302。
Claims (13)
1.一种同时在深沟槽底部和顶部形成图形的工艺方法,其特征在于,包括以下步骤:
(1)提供一需要在深沟槽底部和顶部形成图形的硅片;
(2)光刻胶的涂布和烘烤;
(3)使用具有目标图形的掩膜版进行曝光,形成光刻胶潜影;
(4)用硅烷化剂对上述具有光刻胶潜影的光刻胶进行硅烷基化处理,将潜影图形转化成硅烷基化图形;
(5)以上述硅烷基化图形为掩膜层,干法刻蚀光刻胶,在深沟槽底部和顶部同时形成图形;
(6)以上述硅烷基化图形和剩余光刻胶为掩膜层,刻蚀深沟槽底部和顶部的薄膜层,在深沟槽底部和顶部同时形成该薄膜层的图形。
2.根据权利要求1所述的方法,其特征在于,在步骤(1)中,在所述硅片上,已经形成了一深沟槽结构。
3.根据权利要求2所述的方法,其特征在于,在步骤(1)中,在所述深沟槽的底部、侧壁和顶部都已生长了一层薄膜层,该薄膜层就是需形成最终图形的薄膜层。
4.根据权利要求3所述的方法,其特征在于,在步骤(1)中,所述薄膜层是介质薄膜层,金属硅化物薄膜层,金属薄膜层,或其任意组合。
5.根据权利要求1所述的方法,其特征在于,在步骤(2)中,所述的光刻胶在曝光前不含羟基和羧酸基成分,经曝光后能生成羟基或/和羧酸基成分。
6.根据权利要求1或5所述的方法,其特征在于,在步骤(2)中,所述光刻胶在烘烤以后的厚度为2-100微米;所述光刻胶在烘烤以后的厚度要大到足以完全覆盖所述的深沟槽。
7.根据权利要求1或5所述的方法,其特征在于,在步骤(2)中,所述光刻胶的涂布使用旋涂或喷涂的方式。
8.根据权利要求1所述的方法,其特征在于,在步骤(3)中,所述的曝光光源是波长436纳米的G-line,波长365纳米的I-line,波长248纳米的KrF和波长193纳米的ArF中的任意一种。
9.根据权利要求8所述的方法,其特征在于,在步骤(3)中,所述的曝光光源是波长365纳米的I-line。
10.根据权利要求1所述的方法,其特征在于,在步骤(4)中,所述的硅烷化剂包括六甲基二硅氮烷,四甲基二硅氮烷,二甲基甲硅烷二甲胺,N,N--二乙氨基三甲基硅烷。
11.根据权利要求10所述的方法,其特征在于,在步骤(4)中,所述的硅烷化剂是六甲基二硅氮烷。
12.根据权利要求1或10或11所述的方法,其特征在于,在步骤(4)中,所述的硅烷基化处理是将步骤(3)所获得的具有目标图形潜影的光刻胶暴露于液态或气态的所述硅烷化剂中,进行化学反应,其反应温度为50-150℃,反应时间为30-300秒。
13.根据权利要求1所述的方法,其特征在于,在步骤(5)中,所述的干法刻蚀是以氧气为主要刻蚀气体的等离子体干法刻蚀,其氧气流量为50-2000标准状态的立方厘米/分钟,源射频功率为100-1500瓦,气体压力为20-2000毫托。
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