CN103827969A - 反铁磁性存储设备 - Google Patents
反铁磁性存储设备 Download PDFInfo
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- CN103827969A CN103827969A CN201280044787.0A CN201280044787A CN103827969A CN 103827969 A CN103827969 A CN 103827969A CN 201280044787 A CN201280044787 A CN 201280044787A CN 103827969 A CN103827969 A CN 103827969A
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- 230000005290 antiferromagnetic effect Effects 0.000 title claims abstract description 76
- 238000003860 storage Methods 0.000 title description 10
- 230000005291 magnetic effect Effects 0.000 claims abstract description 303
- 230000008878 coupling Effects 0.000 claims description 51
- 238000010168 coupling process Methods 0.000 claims description 51
- 238000005859 coupling reaction Methods 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 27
- 238000003491 array Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 230000005294 ferromagnetic effect Effects 0.000 claims description 10
- 230000006641 stabilisation Effects 0.000 claims description 5
- 238000011105 stabilization Methods 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 3
- 239000002086 nanomaterial Substances 0.000 abstract description 10
- 230000003993 interaction Effects 0.000 abstract description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 42
- 229910052742 iron Inorganic materials 0.000 description 26
- 239000010949 copper Substances 0.000 description 15
- 230000005303 antiferromagnetism Effects 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 9
- 238000005036 potential barrier Methods 0.000 description 9
- 238000013500 data storage Methods 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 238000013459 approach Methods 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008030 elimination Effects 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005307 ferromagnetism Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000006249 magnetic particle Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
- 230000005366 Ising model Effects 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 101100479889 Salmonella typhimurium (strain LT2 / SGSC1412 / ATCC 700720) asnS gene Proteins 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- -1 nitrogen Ions Chemical class 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/672—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having different compositions in a plurality of magnetic layers, e.g. layer compositions having differing elemental components or differing proportions of elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/676—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer
- G11B5/678—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer having three or more magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0009—Antiferromagnetic materials, i.e. materials exhibiting a Néel transition temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/002—Antiferromagnetic thin films, i.e. films exhibiting a Néel transition temperature
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient
- Y10S977/838—Magnetic property of nanomaterial
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/933—Spintronics or quantum computing
- Y10S977/935—Spin dependent tunnel, SDT, junction, e.g. tunneling magnetoresistance, TMR
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/943—Information storage or retrieval using nanostructure
Abstract
Description
阵列大小 | 磁场 | 前因子τo(s) | 能量势垒EB(meV) |
(2×6) | 1T,3T | 3×10-9 | 8.2±0.2 |
(1×8) | 1T | 5×10-9 | 6.9±0.1 |
(1×8) | 3T | 5×10-8 | 5.6±0.3 |
(2×4) | 1T,3T | 2×10-4 | 1.49±0.03 |
Claims (24)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/234,073 | 2011-09-15 | ||
US13/234,073 US8724376B2 (en) | 2011-09-15 | 2011-09-15 | Antiferromagnetic storage device |
PCT/IB2012/054220 WO2013038281A1 (en) | 2011-09-15 | 2012-08-21 | Antiferromagnetic storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103827969A true CN103827969A (zh) | 2014-05-28 |
CN103827969B CN103827969B (zh) | 2017-05-31 |
Family
ID=47880541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280044787.0A Expired - Fee Related CN103827969B (zh) | 2011-09-15 | 2012-08-21 | 反铁磁性存储设备 |
Country Status (5)
Country | Link |
---|---|
US (3) | US8724376B2 (zh) |
CN (1) | CN103827969B (zh) |
DE (1) | DE112012003852B4 (zh) |
GB (1) | GB2508527B (zh) |
WO (1) | WO2013038281A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116053729A (zh) * | 2023-03-31 | 2023-05-02 | 南京大学 | 基于纳米磁体阵列的可重构自旋波传输通道 |
WO2023241161A1 (zh) * | 2022-06-15 | 2023-12-21 | 北京理工大学 | 反铁磁磁性存储器器件及其制造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8724376B2 (en) | 2011-09-15 | 2014-05-13 | International Business Machines Corporation | Antiferromagnetic storage device |
TWI720971B (zh) | 2015-03-09 | 2021-03-11 | 日商三井化學股份有限公司 | 不織布積層體、伸縮性不織布積層體、纖維製品、吸收性物品及衛生口罩 |
US10842682B2 (en) | 2015-03-09 | 2020-11-24 | Mitsui Chemicals, Inc. | Nonwoven fabric layered body, stretchable nonwoven fabric layered body, fiber product, absorbent article, and sanitary mask |
EP3185245A1 (en) * | 2015-12-22 | 2017-06-28 | Hitachi, Ltd. | Antiferromagnetic memory device |
US9953692B1 (en) | 2017-04-11 | 2018-04-24 | Sandisk Technologies Llc | Spin orbit torque MRAM memory cell with enhanced thermal stability |
GB2576174B (en) | 2018-08-07 | 2021-06-16 | Ip2Ipo Innovations Ltd | Memory |
CN111009365B (zh) * | 2019-12-13 | 2020-09-04 | 北京科技大学 | 一种调控反铁磁薄膜材料的磁矩排列的方法 |
Citations (4)
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CN1703780A (zh) * | 2002-10-03 | 2005-11-30 | 索尼株式会社 | 存储元件和存储装置 |
JP2006247795A (ja) * | 2005-03-11 | 2006-09-21 | Furukawa Electric Co Ltd:The | ナノ構造体及びそれを用いた磁気記憶材料、配線基板、アンテナ基材 |
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US8724376B2 (en) | 2011-09-15 | 2014-05-13 | International Business Machines Corporation | Antiferromagnetic storage device |
-
2011
- 2011-09-15 US US13/234,073 patent/US8724376B2/en active Active
-
2012
- 2012-08-21 CN CN201280044787.0A patent/CN103827969B/zh not_active Expired - Fee Related
- 2012-08-21 DE DE112012003852.5T patent/DE112012003852B4/de active Active
- 2012-08-21 WO PCT/IB2012/054220 patent/WO2013038281A1/en active Application Filing
- 2012-08-21 GB GB1401831.1A patent/GB2508527B/en not_active Expired - Fee Related
-
2014
- 2014-03-04 US US14/196,835 patent/US9343130B2/en not_active Expired - Fee Related
-
2016
- 2016-03-22 US US15/076,992 patent/US9437269B2/en active Active
Patent Citations (4)
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CN1703780A (zh) * | 2002-10-03 | 2005-11-30 | 索尼株式会社 | 存储元件和存储装置 |
JP2006247795A (ja) * | 2005-03-11 | 2006-09-21 | Furukawa Electric Co Ltd:The | ナノ構造体及びそれを用いた磁気記憶材料、配線基板、アンテナ基材 |
CN101202543A (zh) * | 2006-12-12 | 2008-06-18 | 中国科学院物理研究所 | 一种磁性材料逻辑电路及制作方法 |
US20100140727A1 (en) * | 2008-12-05 | 2010-06-10 | Tohoku University | Magnetic thin film and method of manufacturing the same, and various application devices using the same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2023241161A1 (zh) * | 2022-06-15 | 2023-12-21 | 北京理工大学 | 反铁磁磁性存储器器件及其制造方法 |
CN116053729A (zh) * | 2023-03-31 | 2023-05-02 | 南京大学 | 基于纳米磁体阵列的可重构自旋波传输通道 |
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GB201401831D0 (en) | 2014-03-19 |
US20130070518A1 (en) | 2013-03-21 |
DE112012003852B4 (de) | 2021-08-05 |
US20160203851A1 (en) | 2016-07-14 |
WO2013038281A1 (en) | 2013-03-21 |
GB2508527A (en) | 2014-06-04 |
DE112012003852T5 (de) | 2014-06-26 |
US9437269B2 (en) | 2016-09-06 |
US8724376B2 (en) | 2014-05-13 |
GB2508527B (en) | 2015-02-11 |
US9343130B2 (en) | 2016-05-17 |
US20140185371A1 (en) | 2014-07-03 |
CN103827969B (zh) | 2017-05-31 |
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