CN103820849A - 一种减压生产12寸单晶硅外延片的工艺 - Google Patents
一种减压生产12寸单晶硅外延片的工艺 Download PDFInfo
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- CN103820849A CN103820849A CN201210464962.3A CN201210464962A CN103820849A CN 103820849 A CN103820849 A CN 103820849A CN 201210464962 A CN201210464962 A CN 201210464962A CN 103820849 A CN103820849 A CN 103820849A
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104502416A (zh) * | 2014-12-04 | 2015-04-08 | 青岛隆盛晶硅科技有限公司 | 一种测试硅锭提纯工艺出成率的方法 |
CN105448653A (zh) * | 2014-09-01 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | 减少晶圆外延工艺缺陷的方法 |
CN106298444A (zh) * | 2015-06-04 | 2017-01-04 | 有研半导体材料有限公司 | 一种硅片表面高温氢处理的方法 |
CN107400921A (zh) * | 2017-07-27 | 2017-11-28 | 上海晶盟硅材料有限公司 | 外延设备保养方法 |
CN109371471A (zh) * | 2018-11-30 | 2019-02-22 | 上海晶盟硅材料有限公司 | 双层外延片的生长方法及双层外延片 |
CN110379704A (zh) * | 2019-07-19 | 2019-10-25 | 中国电子科技集团公司第四十六研究所 | 一种高压功率器件用硅外延片的制备方法 |
CN110670129A (zh) * | 2019-09-27 | 2020-01-10 | 西安奕斯伟硅片技术有限公司 | 一种晶圆外延设备的处理方法和晶圆处理方法 |
CN110707000A (zh) * | 2018-07-09 | 2020-01-17 | 杨丽芸 | 一种桶式外延炉ic片外延工艺方法 |
CN112382560A (zh) * | 2020-11-12 | 2021-02-19 | 重庆万国半导体科技有限公司 | 一种多层外延减压生长方法 |
CN112663137A (zh) * | 2020-12-28 | 2021-04-16 | 中电晶华(天津)半导体材料有限公司 | 一种硅反外延片的制备方法 |
CN112992741A (zh) * | 2021-03-04 | 2021-06-18 | 长江存储科技有限责任公司 | 半导体处理装置及排气方法 |
CN113322513A (zh) * | 2021-08-03 | 2021-08-31 | 南京国盛电子有限公司 | 一种生长薄层高阻硅外延片的方法及所制得的外延片 |
CN115747962A (zh) * | 2022-12-07 | 2023-03-07 | 西安奕斯伟材料科技有限公司 | 晶圆的外延生长方法及设备 |
Citations (3)
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JPH0684809A (ja) * | 1992-09-04 | 1994-03-25 | Rohm Co Ltd | エピタキシャル層の形成法 |
CN1870219A (zh) * | 2006-06-09 | 2006-11-29 | 河北工业大学 | 提高p型硅外延电阻率一致性的控制方法 |
CN101106079A (zh) * | 2007-04-26 | 2008-01-16 | 河北普兴电子科技股份有限公司 | 硅锗材料的一种生长方法 |
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2012
- 2012-11-16 CN CN201210464962.3A patent/CN103820849B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0684809A (ja) * | 1992-09-04 | 1994-03-25 | Rohm Co Ltd | エピタキシャル層の形成法 |
CN1870219A (zh) * | 2006-06-09 | 2006-11-29 | 河北工业大学 | 提高p型硅外延电阻率一致性的控制方法 |
CN101106079A (zh) * | 2007-04-26 | 2008-01-16 | 河北普兴电子科技股份有限公司 | 硅锗材料的一种生长方法 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105448653A (zh) * | 2014-09-01 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | 减少晶圆外延工艺缺陷的方法 |
CN104502416A (zh) * | 2014-12-04 | 2015-04-08 | 青岛隆盛晶硅科技有限公司 | 一种测试硅锭提纯工艺出成率的方法 |
CN106298444A (zh) * | 2015-06-04 | 2017-01-04 | 有研半导体材料有限公司 | 一种硅片表面高温氢处理的方法 |
CN107400921A (zh) * | 2017-07-27 | 2017-11-28 | 上海晶盟硅材料有限公司 | 外延设备保养方法 |
CN110707000A (zh) * | 2018-07-09 | 2020-01-17 | 杨丽芸 | 一种桶式外延炉ic片外延工艺方法 |
CN109371471A (zh) * | 2018-11-30 | 2019-02-22 | 上海晶盟硅材料有限公司 | 双层外延片的生长方法及双层外延片 |
CN109371471B (zh) * | 2018-11-30 | 2021-03-16 | 上海晶盟硅材料有限公司 | 双层外延片的生长方法及双层外延片 |
CN110379704B (zh) * | 2019-07-19 | 2021-05-28 | 中国电子科技集团公司第四十六研究所 | 一种高压功率器件用硅外延片的制备方法 |
CN110379704A (zh) * | 2019-07-19 | 2019-10-25 | 中国电子科技集团公司第四十六研究所 | 一种高压功率器件用硅外延片的制备方法 |
CN110670129A (zh) * | 2019-09-27 | 2020-01-10 | 西安奕斯伟硅片技术有限公司 | 一种晶圆外延设备的处理方法和晶圆处理方法 |
CN112382560A (zh) * | 2020-11-12 | 2021-02-19 | 重庆万国半导体科技有限公司 | 一种多层外延减压生长方法 |
WO2022100408A1 (zh) * | 2020-11-12 | 2022-05-19 | 重庆万国半导体科技有限公司 | 一种多层外延减压生长方法 |
CN112663137A (zh) * | 2020-12-28 | 2021-04-16 | 中电晶华(天津)半导体材料有限公司 | 一种硅反外延片的制备方法 |
CN112992741A (zh) * | 2021-03-04 | 2021-06-18 | 长江存储科技有限责任公司 | 半导体处理装置及排气方法 |
CN113322513A (zh) * | 2021-08-03 | 2021-08-31 | 南京国盛电子有限公司 | 一种生长薄层高阻硅外延片的方法及所制得的外延片 |
CN115747962A (zh) * | 2022-12-07 | 2023-03-07 | 西安奕斯伟材料科技有限公司 | 晶圆的外延生长方法及设备 |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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