CN103731123A - Ultra-wide-band pulse signal generation device based on memristor - Google Patents
Ultra-wide-band pulse signal generation device based on memristor Download PDFInfo
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Abstract
The invention discloses an ultra-wide-band pulse signal generation device based on a memristor. The ultra-wide-band pulse signal generation device comprises a memristor control circuit, a square wave oscillation circuit, an ultra-wide-band pulse generation circuit and a voltage doubling circuit. The input end of the square wave oscillation circuit is connected with the memristor control circuit, the input end of the voltage doubling circuit is connected to the first output end of the square wave oscillation circuit, the first input end of the pulse generation circuit is connected to the output end of the voltage doubling circuit, and the second input end of the pulse generation circuit is connected to the second output end of the square wave oscillation circuit. The memristor control circuit comprises a triode. The square wave oscillation circuit comprises a TTL gate circuit, the memristor and an emitting electrode amplifying circuit. The ultra-wide-band pulse generation circuit comprises a phase inverter, an RC differentiating circuit, a microwave triode amplifying circuit and a Schottky diode. Ultra-wide-band pulses generated by the device have the advantages that the frequency stability is high, the adjustable range is wide, the pulse voltage amplitude value is large, stable and easy to detect, required circuit elements are simple and low in cost, and circuits are simple in structure and easy to debug.
Description
Technical field
The invention belongs to ULTRA-WIDEBAND RADAR imaging system, belong to Signals & Systems field., more specifically, relate to a kind of ultra-wideband impulse signal generation device based on memristor.
Background technology
Since 1989 U.S. Department of Defense (DARPA) ultra broadband concept is proposed first, its huge business opportunity representing in commercial communication is impelled FCC (FCC), and in 2002 approvals, it is applied to civilianly, has promulgated the planning of UWB (Ultra Wideband) frequency spectrum and has been defined as to ultra broadband: the absolute bandwidth at-10dB place is greater than 500MHz or relative bandwidth, and to be greater than that 20% signal can be considered be ultra-broadband signal.Ultra broadband is different from conventional communication mode, it does not need carrier transmit signal but by directly transmitting and receiving nanosecond or data are transmitted in the nanosecond pulse of subnanosecond level non-sine, therefore has advantages of that traditional communication is matchless: large capacity, two-forty, low-power consumption, antijamming capability are strong etc.The pulsewidth of nanosecond pulse directly affects the comprised spectrum component that transmits, and frequency range has directly determined the penetration performance of radio ultra wide band system, pulse amplitude has determined detection range, so the high amplitude ultra-wideband pulse generating technique of nanosecond or subnanosecond level is very crucial.
From the research to UWB technology both at home and abroad at present, ultra-wideband pulse producing method mainly contains two large classes, the one, utilize the switching characteristic of semiconductor device to realize, this method is to utilize energy-storage travelling wave tube to discharge and recharge to obtain spike signal, more can be met the waveform of requirement through shaping circuit.Another kind is to utilize the logical device characteristic of digital circuit to produce needed pulse.Comparatively speaking, first kind of way implementation is versatile and flexible, and cost is low, and device is few, therefore becomes the major way that ultra-wideband pulse produces.The semiconductor device that first kind of way adopts is different, resulting nanosecond pulse quality is not quite similar, in pulsewidth, amplitude, can not show good simultaneously, and great majority need crystal oscillator that square wave, different direct-flow voltage regulation source are provided at input, be unfavorable for integrated, therefore for this phenomenon, the present invention intends proposing a kind of ultra-broadband signal production method based on memristor characteristic.The semiconductor device that first kind of way adopts is different, and resulting ultra broadband nanosecond pulse characteristic is not quite similar, and is difficult to take into account amplitude and pulsewidth simultaneously, and majority needs square wave excitation at input.Therefore for this phenomenon, the present invention intends proposing a kind of ultra-broadband signal production method based on memristor.
Summary of the invention
For above defect or the Improvement requirement of prior art, the object of the present invention is to provide a kind ofly can produce that frequency stability is high, adjustable extent is wide, pulse voltage amplitude is large and the ultra-wideband impulse signal generation device based on memristor of the stable ultra-wideband impulse signal easily detecting.
A kind of ultra-wideband impulse signal generation device based on memristor provided by the invention, comprises memristor control circuit, square-wave oscillator circuit, voltage-multiplying circuit and pulse-generating circuit; The input of square-wave oscillator circuit connects described memristor control circuit, the input of described voltage-multiplying circuit is connected to the first output of described square-wave oscillator circuit, the first input end of described pulse-generating circuit is connected to the output of described voltage-multiplying circuit, the second input of described pulse-generating circuit is connected to the second output of described square-wave oscillator circuit, and the output of described pulse-generating circuit is used for exporting ultra-wideband impulse signal.
Wherein, during work, under the control signal of memristor control circuit, memristor resistance is rule and changes, and to produce an adjustable multi resonant square wave of frequency be late-class circuit provider wave excitation; The switching that when square-wave oscillator circuit has utilized TTL gate circuit bistable state to switch, feedback RC circuit has been discharged and recharged to obtain low and high level two states realizes square-wave signal and occurs; Pulse-generating circuit utilizes the speed-sensitive switch characteristic of microwave triode, when switching, on off state discharges and recharges to obtain spike by RC differential circuit, and form nanosecond spike, by voltage-multiplying circuit, make described nanosecond spike reach ultra broadband launch requirements.
Wherein, square-wave oscillator circuit comprises the first not gate G1, the second not gate G2, resistance R, capacitor C 1, memristor M, metal-oxide-semiconductor Q, resistance R e and the 3rd not gate G3; The input of described the second not gate G2 is connected to the output of described the first not gate G1, the anode of described memristor M is connected to the output of described the second not gate G2 by described resistance R, the negative terminal of described memristor M is connected to the grid of described metal-oxide-semiconductor Q, and the negative terminal of described memristor M is also connected to the input of described the second not gate G2 by described capacitor C 1; The drain electrode of described metal-oxide-semiconductor Q meets power supply VCC, and the source electrode of described metal-oxide-semiconductor Q is connected with the input of described the 3rd not gate G3, and the output of described the 3rd not gate G3 is connected to the input of described the first not gate G1; The output of described the 3rd not gate G3 is as the output of described square-wave oscillator circuit; Described resistance R e is connected between the input and ground of described the 3rd not gate G3.
Wherein, the first not gate G1, the second not gate G2 or the 3rd not gate G3 are TTL not gate.
Wherein, pulse-generating circuit comprises: the first inverter G4, first order differential circuit, the second inverter G5, the 3rd inverter G6, adjustable resistance RT, triode T3, second level differential circuit, resistance R 4 and diode D9; The input of the first inverter G4 is as the second input of described pulse-generating circuit, and the input of described the second inverter G5 is connected to the output of described the first inverter G4 by described first order differential circuit; The input of the 3rd inverter G6 is connected to the output of described the second inverter G5, the base stage of triode T3 is connected to the output of described the 3rd inverter G6, the grounded emitter of triode T3, the collector electrode of triode T3 is connected to the negative electrode of diode D9 by described second level differential circuit, the anode of diode D9 is as the output of described pulse-generating circuit; One end of described adjustable resistance RT is connected with described voltage-multiplying circuit as the first input end of described pulse-generating circuit, and the other end of adjustable resistance RT is connected to the collector electrode of triode T3; Described resistance R 4 is connected between the anode and ground of described diode D9.
Wherein, first order differential circuit comprises output and the capacitor C between ground 2 and the resistance R 2 that is connected in series in successively described the first inverter G4, and described capacitor C 2 is connected with the input of described the second inverter G5 with the end that is connected in series of described resistance R 2.
Wherein, second level differential circuit comprises collector electrode and the capacitor C between ground 3 and the resistance R 3 that is connected in series in successively described T3, and described capacitor C 3 is connected with the negative electrode of described diode D9 with the end that is connected in series of described resistance R 3.
Wherein, memristor control circuit comprises triode T1 and triode T2; The emitter of triode T1 is connected with the emitter of triode T2, the equal ground connection of collector electrode of the collector electrode of triode T1 and triode T2, the base stage of the base stage of triode T1 and triode T2 is all for receiving outside control signal, and the link of triode T1 and triode T2 is as the output of described memristor control circuit.
Wherein, voltage-multiplying circuit comprises a plurality of voltage doubling units that are connected in series; Described voltage doubling unit comprises the first diode, the second diode, the first electric capacity and the second electric capacity; One end of described the first electric capacity is as the input of described voltage-multiplying circuit, and the other end of described the first electric capacity is connected with the negative electrode of described the first diode; The plus earth of described the first diode, the anodic bonding of the second diode is to the negative electrode of described the first diode, and the negative electrode of the second diode is as the output of described voltage-multiplying circuit; Described the second electric capacity is connected between the negative electrode of described the second diode and the anode of described the first diode.
Advantage of the present invention is mainly reflected in:
(1) because memristor resistance can be rule, change, so the square wave frequency that square-wave oscillator circuit produces is stablized adjustable;
(2) circuit element used is simple, volume is little, cost is low, voltage-multiplying circuit makes whole device only need a constant pressure source, easy of integration;
(3) pulse that the generation of the nanosecond pulse based on microwave triode circuit produces can take into account pulse amplitude and pulsewidth, has avoided pursuing simply the low amplitude value that burst pulse causes millivolt level.
(4) can be widely used in the transmitting terminal of radio ultra wide band system.
Accompanying drawing explanation
Fig. 1 is the modular structure theory diagram of the ultra-wideband impulse signal generation device based on memristor provided by the invention;
Fig. 2 is the physical circuit figure of the ultra-wideband impulse signal generation device based on memristor provided by the invention;
Fig. 3 is the output waveform schematic diagram of square-wave oscillator circuit in the ultra-wideband impulse signal generation device based on memristor provided by the invention;
Fig. 4 is superwide band pulse wave schematic diagram in the ultra-wideband impulse signal generation device based on memristor provided by the invention;
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.In addition,, in each execution mode of described the present invention, involved technical characterictic just can not combine mutually as long as do not form each other conflict.
The circuit structure of the ultra-broadband signal generation device based on memristor characteristic provided by the invention is simple, can integrated level high, low in energy consumption, and output pulse amplitude is high, can be widely used in radio ultra wide band system transmitter; Having solved existing ultra-wideband pulse generation circuit dependence quartz oscillator or signal generator provides, and strengthens ultra-broadband signal disguise and improves ultra-wideband pulse generation device to applying environmental adaptation degree.
Fig. 1 shows the modular structure of a kind of ultra-wideband impulse signal generation device based on memristor that the embodiment of the present invention provides, and for convenience of explanation, only shows the part relevant to the embodiment of the present invention, and details are as follows:
Ultra-wideband impulse signal generation device based on memristor comprises that memristor control circuit 1, square-wave oscillator circuit 2, voltage-multiplying circuit 3 and ultra-wideband pulse produce circuit 4; Memristor control circuit 1 is controlled memristor change in resistance rule by control signal, produces the square wave of different repetition rates according to memristor change in resistance square-wave oscillator circuit; The square wave that square-wave oscillator circuit 2 produces produces circuit 4 to ultra-wideband pulse and voltage-multiplying circuit 3 provides input stimulus; The microwave triode that voltage-multiplying circuit 3 is exported in ultra-wideband pulse generation circuit provides direct current biasing, guarantees that microwave triode can be operated on off state; Ultra-wideband pulse produces circuit can produce amplitude-4V, the ultra broadband negative polarity Gaussian pulse of pulsewidth 1ns.Further, square-wave oscillator circuit based on memristor comprises that first order TTL not gate G1 output directly connects second level TTL not gate G2 input, the output of second level TTL not gate G2 feeds back to its input by resistance and memristor and the capacitor C 1 formation feedback loop of series connection by the output of second level TTL not gate G2, the positive terminating resistor of memristor, negative terminal connects respectively electric capacity and emitter amplifier MOSFET grid, Design enlargement device is delivered to third level TTL not gate G3 input in the output of source electrode, and third level TTL not gate G3 output feeds back to the input of first order not gate G1.The square-wave signal that whole square-wave oscillator circuit produces is from the non-gate output terminal output of the 3rd utmost point TTL, for ultra-wideband pulse produces circuit and voltage-multiplying circuit provides excitation.
Emitter-base bandgap grading amplifying circuit adopts MOSFET pipe, and its drain electrode directly meets reverse bias voltage VCC, and grid connects the negative pole of memristor, and source electrode is by resistance R e ground connection, and drain electrode output connects third level TTL not gate G3 input.Emitter-base bandgap grading amplifying circuit cannot normally be opened with solving the too high third level TTL not gate G3 that causes of memristor resistance.
Memristor control circuit comprises NPN type triode and positive-negative-positive triode, NPN type transistor collector connects positive reversed bias voltage, emitter connects the emitter of positive-negative-positive triode, the collector electrode of positive-negative-positive triode connects negative bias voltage, NPN type transistor emitter is connected the anode of memristor with the phase contact of the emitter of positive-negative-positive triode, memristor is born termination capacitor.By control signal is set, change memristor resistance and Changing Pattern thereof, thereby make the square-wave oscillator circuit based on memristor can produce the adjustable square wave of frequency, subsequent conditioning circuit provides excitation.
The top electrode of memristor is pricked top electrode probe, and the bottom electrode of memristor is pricked bottom electrode probe, and upper/lower electrode probe is respectively as anode and the negative terminal of memristor.Memristor resistance under the effect of memristor control circuit has memory function, can be rule and change, thereby the square wave frequency that square wave circuit for generating is produced also can be rule, changes.
Ultra-wideband pulse produces circuit, the square wave that square-wave oscillator circuit produces by after inverter G4 through first order RC differential circuit, RC differential circuit is cut narrow rear inverter G5, G6 by two-stage cascade by square wave and is formed a square wave that pulsewidth is very narrow, be input to the base stage of microwave triode, the direct ground connection of microwave triode emitter, the collector bias voltage of microwave triode is provided by voltage-multiplying circuit output.The collector electrode output of microwave triode is by continuing to cut narrow pulsewidth shape after the RC differential circuit of the second level, Schottky diode of node place Opposite direction connection of electric capacity and resistance, the positive input of diode is by low resistance grounding, and ultra-wideband impulse signal is exported by the positive input of diode.
Voltage-multiplying circuit is comprised of according to Fig. 2 module 3 circuit arrangement diode and the electric capacity of 8 same model, and its multiplication of voltage principle is: when input square wave is low level, and loop no-output; When input square wave is high level U
htime, this level forms a loop by C4, D2, C5, D1, and D1, D2 are ideal diode, C4, C5 each self-charging of connecting
when input square wave high level disappears, C4, C5 start electric discharge, and according to the known C4 of diode orientation, C5 course of discharge, the input voltage of C6 is C4, C5 discharge voltage sum, is to the maximum
like this in C4, C5 charge and discharge process C6 input to be similar to low level be zero, high level is
square wave; 4 such loops in parallel, in the end D8 input obtains
due to U
hfor 5V, therefore only need 4 such loops just can, so that final output voltage reaches the constant voltage of approximate 20V, be enough to guarantee that microwave triode always works on off state.
The square wave excitation that voltage-multiplying circuit can produce square wave circuit for generating is similar to and converts constant pressure source to, to microwave triode, provides DC offset voltage, guarantees that microwave triode can normally be operated on off state.Voltage-multiplying circuit makes whole Circuits System only need the constant pressure source of a 5V, can reduce circuit cost.
Beneficial effect of the present invention is: according to memristor characteristic, the control signal of inputting by memristor control circuit, the resistance of memristor will be rule and change, thereby change the time constant that discharges and recharges feedback loop being formed by memristor, resistance and electric capacity, and then reach the object of automatic change square-wave oscillator frequency; The voltage that the square wave producing is exported an approximate constant voltage after by voltage-multiplying circuit provides bias voltage can be operated on off state to microwave triode.The square wave producing is inputted the square wave of pulsewidth 20ns by RC differential circuit and two-stage inverter in microwave triode base stage, when microwave triode is when speed-sensitive switch switches, square-wave signal is again by forming burst pulse after the RC differential circuit of the microwave triode collector electrode second level, Schottky diode by Opposite direction connection forms burst pulse shaping the spike of the about 1ns of pulsewidth, the ultra-wideband pulse that instant the present invention will produce.
Advantage of the present invention is mainly reflected in:
(1) because memristor resistance can be rule, change, so the square wave frequency that square-wave oscillator circuit produces is stablized adjustable;
(2) circuit element used is simple, volume is little, cost is low, voltage-multiplying circuit makes whole device only need a constant pressure source, easy of integration;
(3) pulse that the generation of the nanosecond pulse based on microwave triode circuit produces can take into account pulse amplitude and pulsewidth, has avoided pursuing simply the low amplitude value that burst pulse causes millivolt level.
(4) can be widely used in the transmitting terminal of radio ultra wide band system.
Below in conjunction with accompanying drawing, the feature and advantage of ultra-broadband signal production method of the present invention are described in more detail.
Refer to Fig. 1, for a kind of ultra-broadband signal based on memristor of the present invention produces the electric circuit constitute block diagram, the present invention includes memristor control circuit 1, square-wave oscillator circuit 2, voltage-multiplying circuit 3 and ultra-wideband pulse and produce circuit 4.Consult Fig. 2, described square-wave oscillator circuit, it is characterized in that, first order TTL not gate G1 output directly connects second level TTL not gate G2 input, the output of second level TTL not gate G2 feeds back to its input by resistance R and memristor M and the capacitor C 1 formation feedback circuit of series connection by the output of second level TTL not gate G2, the positive terminating resistor of memristor, negative terminal connects respectively the grid of electric capacity and emitter amplifier MOSFET, Design enlargement device MOSFET connects third level TTL not gate G3 input in the output of source electrode, and third level TTL not gate G3 output feeds back to the input of first order not circuit.The square-wave signal of whole square-wave oscillator circuit output is exported from the 3rd utmost point TTL not gate G3 output.
Emitter-base bandgap grading amplifying circuit adopts MOSFET pipe, and its drain electrode directly meets reverse bias voltage VCC, and grid connects the negative pole of memristor, and source electrode is by resistance R e ground connection, and drain electrode output connects the 3rd utmost point TTL not gate G3 input.
Memristor control circuit comprises NPN type triode and positive-negative-positive triode, NPN type transistor collector connects positive reversed bias voltage, emitter connects the emitter of positive-negative-positive triode, the collector electrode of positive-negative-positive triode connects negative bias voltage, NPN type transistor emitter is connected the anode of memristor with the phase contact of the emitter of positive-negative-positive triode, memristor is born termination capacitor.
Ultra-wideband pulse produces circuit, the square wave that square-wave oscillator circuit produces by after inverter through first order RC differential circuit, the waveform of cutting after narrow through RC differential circuit is input to the base stage of microwave triode by the inverter of two-stage cascade, the direct ground connection of microwave triode emitter, the collector bias voltage of microwave triode is provided by voltage-multiplying circuit output, the collector electrode output of microwave triode is by continuing to cut narrow pulsewidth shape after the RC differential circuit of the second level, a Schottky diode is oppositely placed at the contact place of electric capacity and resistance, the anode of diode passes through low resistance grounding, ultra-wideband impulse signal is exported by the anode of diode.The square wave that square-wave oscillator circuit produces by after COMS inverter through RC differential circuit, the waveform that RC differential circuit is cut after narrow is input to the base stage of microwave triode by the CMOS inverter of two-stage cascade, the direct ground connection of microwave triode emitter, the collector bias voltage of microwave triode is provided by voltage-multiplying circuit output, the collector electrode output of microwave triode is by continuing to cut narrow pulsewidth after the RC differential circuit of the second level, the contact place Opposite direction connection Schottky diode of electric capacity and resistance, low resistance grounding is passed through in the output of diode, ultra-wideband impulse signal is drawn by the output of diode.
Voltage-multiplying circuit is comprised of diode and the electric capacity of 8 same model, each four capacitance interval are arranged up and down, C4, C6, C8, C10 series connection above, C5, C7, C9, C11 series connection below, C4 is connected by reverse placement diode with C5, in like manner between C5 and C6, C6 and C7, C7 and C8, C8 and C9, C9 and C10, C10 and C11, be also connected like this diode, diode D1 positive input ground connection, C10 output is placed diode with C11 outlet chamber forward.Suppose that power supply rigidly connects the output signal u of square-wave oscillator circuit while leading to
o1for high level, establish TTL inverter G1, G2 input terminal voltage is u
1, u
2, G2 output end voltage is u
3, G3 input voltage u
4, because its both end voltage of not yet charging of C1 is now zero, u
2, u
4for low level, circuit is in the first temporary stable state.Along with u
3high level charges to C1 by resistance R and memristor M, u
4raise gradually, until while surpassing the threshold voltage vt h of inverter, G3 upset, u
o1=u
1become low level, G1 is also overturn, u
2become high level, because capacitor C 1 voltage can not suddenly change, u
4also have a positive transition, keeping G3 output level is low level, and now circuit is in the second temporary stable state.Along with u
2high level is the reverse charging to C1 through R, M, u
4be reduced to gradually while being less than threshold voltage, G3 overturns again, and circuit is got back to again the first temporary stable state.So circulation has just produced the square wave of continuous oscillation.The work wave of circuit each point as shown in Figure 3.With the t in Fig. 3
fillas start time, utilize three parametric methods, can obtain the time that discharges and recharges and be:
In like manner, can try to achieve discharge time is:
Bring TTL gate circuit representative value U into
h=3V, U
l=0.3V, U
th=1.4V, the cycle of square-wave oscillator is:
T=t
fill+ t
put=1.9 (M+R) C
f＝1/T＝1/1.9(M+R)C
When memristor resistance M changes according to the control signal of memristor control circuit, the cycle of square-wave oscillator and output frequency also change accordingly.Because the input load resistance M+R of G3 inverter is very large when memristor reaches maximum value, therefore between memristor negative terminal and G3 inverter, add an emitter-base bandgap grading amplifying circuit, the value maximum of resistance R+M can reach 20M Ω like this, reduces its input resistance square-wave oscillator can normally be worked under the constant condition of G3 input voltage.
The square wave input that square-wave oscillator produces produces the positive input of the first order inverter of circuit to nanosecond pulse, this inverter can isolate front late-class circuit influence each other the while can correction waveform.Square wave is through R
2, C
2form the first order differential circuit time discharge and recharge, form a spike, establishing pulsewidth is t
1from circuit condition, analyzed:
The inverter of this spike by two-stage cascade be the constant square wave of forming frequency again, and pulsewidth is t
1, according to above-mentioned formula, get R
2be 140 Ω, according to can be calculated C
2the square wave that can be 20ns in microwave triode base stage input pulsewidth during for 200pF.The base stage that this square wave is added to microwave triode, microwave triode is operated on off state, improves pulse amplitude on the one hand, because the switching characteristic of microwave triode is run well than conventional switch, is conducive to improve the rise and fall edge of pulse on the other hand.Again through second level differential circuit, the spike that to produce pulsewidth be 1ns, its account form is the same with above formula, can obtain equally R when output pulse width 1ns
3be 680 Ω, C
3for 2pF.This spike forms the ultra-wideband pulse that pulsewidth is less than about 1ns after by high speed Schottky diode 1N5711 and launches as shown in Figure 4 and by ultra wide band dipolar antenna.
Because microwave triode collector electrode reverse bias voltage is different from the driving voltage of TTL not circuit, inverter, for fear of increasing a large direct-flow voltage regulation source, allow square-wave oscillator circuit pass through a voltage-multiplying circuit, can obtain the voltage of an intimate direct-flow voltage regulation source.
Get other parts of memristor sample and circuit and be connected, wherein the initial resistance M of memristor is 1k Ω, R
1for 1k Ω, capacitor C
1during for 22pF, the output frequency that calculates this square-wave oscillator according to formula is 1MHz, with oscilloscope measurement, has verified this result.Thereby control signal is controlled direction and the increase of speed controlling party wave oscillator frequency or the trend reducing and the speed of increase and decrease that memristor resistance increases.
By oscilloscope, observe this use novel, by oscilloscope, this circuit can be measured and the negative spike of a pulsewidth about 1 nanosecond can be produced, can reach-4V of pulse amplitude, the square wave repetition rate that the repetition rate of pulse produces with the square-wave oscillator circuit based on memristor is consistent.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present invention; not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. the ultra-wideband impulse signal generation device based on memristor, is characterized in that, comprises memristor control circuit (1), square-wave oscillator circuit (2), voltage-multiplying circuit (3) and pulse-generating circuit (4);
The input of described square-wave oscillator circuit (2) connects described memristor control circuit (1), the input of described voltage-multiplying circuit (3) is connected to the first output of described square-wave oscillator circuit (2), the first input end of described pulse-generating circuit (4) is connected to the output of described voltage-multiplying circuit (3), the second input of described pulse-generating circuit (4) is connected to the second output of described square-wave oscillator circuit (2), and the output of described pulse-generating circuit (4) is used for exporting ultra-wideband impulse signal.
2. ultra-wideband impulse signal generation device as claimed in claim 1, it is characterized in that, during work, under the control signal of memristor control circuit, memristor resistance is rule and changes, and to produce an adjustable multi resonant square wave of frequency be late-class circuit provider wave excitation; The switching that when square-wave oscillator circuit has utilized TTL gate circuit bistable state to switch, feedback RC circuit has been discharged and recharged to obtain low and high level two states realizes square-wave signal and occurs; Pulse-generating circuit utilizes the speed-sensitive switch characteristic of microwave triode, when switching, on off state discharges and recharges to obtain spike by RC differential circuit, and form nanosecond spike, by voltage-multiplying circuit, make described nanosecond spike reach ultra broadband launch requirements.
3. ultra-wideband impulse signal generation device as claimed in claim 1, is characterized in that, described square-wave oscillator circuit (2) comprises the first not gate G1, the second not gate G2, resistance R, capacitor C 1, memristor M, metal-oxide-semiconductor Q, resistance R e and the 3rd not gate G3;
The input of described the second not gate G2 is connected to the output of described the first not gate G1, the anode of described memristor M is connected to the output of described the second not gate G2 by described resistance R, the negative terminal of described memristor M is connected to the grid of described metal-oxide-semiconductor Q, and the negative terminal of described memristor M is also connected to the input of described the second not gate G2 by described capacitor C 1;
The drain electrode of described metal-oxide-semiconductor Q meets power supply VCC, and the source electrode of described metal-oxide-semiconductor Q is connected with the input of described the 3rd not gate G3, and the output of described the 3rd not gate G3 is connected to the input of described the first not gate G1; The output of described the 3rd not gate G3 is as the output of described square-wave oscillator circuit (2);
Described resistance R e is connected between the input and ground of described the 3rd not gate G3.
4. ultra-wideband impulse signal generation device as claimed in claim 3, is characterized in that, described the first not gate G1, the second not gate G2 or the 3rd not gate G3 are TTL not gate.
5. ultra-wideband impulse signal generation device as claimed in claim 1, it is characterized in that, described pulse-generating circuit (4) comprising: the first inverter G4, first order differential circuit (41), the second inverter G5, the 3rd inverter G6, adjustable resistance RT, triode T3, second level differential circuit (42), resistance R 4 and diode D9;
The input of the first inverter G4 is as the second input of described pulse-generating circuit (4), and the input of described the second inverter G5 is connected to the output of described the first inverter G4 by described first order differential circuit (41);
The input of the 3rd inverter G6 is connected to the output of described the second inverter G5, the base stage of triode T3 is connected to the output of described the 3rd inverter G6, the grounded emitter of triode T3, the collector electrode of triode T3 is connected to the negative electrode of diode D9 by described second level differential circuit (42), the anode of diode D9 is as the output of described pulse-generating circuit (4);
One end of described adjustable resistance RT is connected with described voltage-multiplying circuit (3) as the first input end of described pulse-generating circuit (4), and the other end of adjustable resistance RT is connected to the collector electrode of triode T3;
Described resistance R 4 is connected between the anode and ground of described diode D9.
6. ultra-wideband impulse signal generation device as claimed in claim 5, it is characterized in that, described first order differential circuit (41) comprises output and the capacitor C between ground 2 and the resistance R 2 that is connected in series in successively described the first inverter G4, and described capacitor C 2 is connected with the input of described the second inverter G5 with the end that is connected in series of described resistance R 2.
7. ultra-wideband impulse signal generation device as claimed in claim 5, it is characterized in that, described second level differential circuit (42) comprises collector electrode and the capacitor C between ground 3 and the resistance R 3 that is connected in series in successively described T3, and described capacitor C 3 is connected with the negative electrode of described diode D9 with the end that is connected in series of described resistance R 3.
8. ultra-wideband impulse signal generation device as claimed in claim 1, is characterized in that, described memristor control circuit (1) comprises triode T1 and triode T2; The emitter of triode T1 is connected with the emitter of triode T2, the equal ground connection of collector electrode of the collector electrode of triode T1 and triode T2, the base stage of the base stage of triode T1 and triode T2 is all for receiving outside control signal, and the link of triode T1 and triode T2 is as the output of described memristor control circuit (1).
9. ultra-wideband impulse signal generation device as claimed in claim 1, is characterized in that, described voltage-multiplying circuit (3) comprising: a plurality of voltage doubling units that are connected in series (30); Described voltage doubling unit (30) comprises the first diode, the second diode, the first electric capacity and the second electric capacity;
One end of described the first electric capacity is as the input of described voltage-multiplying circuit (3), and the other end of described the first electric capacity is connected with the negative electrode of described the first diode;
The plus earth of described the first diode, the anodic bonding of the second diode is to the negative electrode of described the first diode, and the negative electrode of the second diode is as the output of described voltage-multiplying circuit (3);
Described the second electric capacity is connected between the negative electrode of described the second diode and the anode of described the first diode.
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