CN103731123B - A kind of ultra-wideband impulse signal generation device based on memristor - Google Patents
A kind of ultra-wideband impulse signal generation device based on memristor Download PDFInfo
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Abstract
The invention discloses a kind of ultra-wideband impulse signal generation device based on memristor, comprise that memristor control circuit, square-wave oscillator circuit, ultra-wideband pulse produce circuit and voltage-multiplying circuit; The input of square-wave oscillator circuit connects memristor control circuit, the input of voltage-multiplying circuit is connected to the first output of square-wave oscillator circuit, the first input end of pulse-generating circuit is connected to the output of voltage-multiplying circuit, and the second input is connected to the second output of square-wave oscillator circuit. Memristor control circuit comprises triode, and square-wave oscillator circuit comprises TTL gate circuit, memristor, emitter-base bandgap grading amplifying circuit, and ultra-wideband pulse produces circuit and comprises phase inverter, RC differential circuit, microwave triode amplifying circuit, Schottky diode. The ultra-wideband pulse that the present invention produces has that frequency stability is high, adjustable extent is wide, pulse voltage amplitude is large and stable easy detection, the simple low cost of required component, circuit structure are simple and easy to the advantages such as debugging.
Description
Technical field
The invention belongs to ULTRA-WIDEBAND RADAR imaging system, belong to Signals & Systems field; More specifically,Relate to a kind of ultra-wideband impulse signal generation device based on memristor.
Background technology
Since 1989 U.S. Department of Defense (DARPA) ultra broadband concept is proposed first, it is civilian logicalThe huge business opportunity representing in letter is impelled FCC (FCC), and in 2002 approvals, it is answeredFor civilian, promulgate the planning of UWB (UltraWideband) frequency spectrum and be defined as to ultra broadband :-10dBThe absolute bandwidth at place is greater than 500MHz or relative bandwidth and is greater than 20% signal and can be considered it is ultra broadbandSignal. Ultra broadband is different from conventional communication mode, and it does not need carrier transmit signal but passes through directlyTransmit and receive nanosecond or data are transmitted in the nanosecond pulse of subnanosecond level non-sine, therefore there is traditionThe matchless advantage of communicating by letter: large capacity, two-forty, low-power consumption, antijamming capability are strong etc. NanosecondThe pulsewidth of pulse directly affects the comprised spectrum component that transmits, and frequency range has directly determinedThe penetration performance of radio ultra wide band system, pulse amplitude has determined detection range, therefore nanosecond or subnanosecondIt is very crucial that the high amplitude ultra-wideband pulse of level produces technology.
From the at present both at home and abroad research to UWB technology, it is two large that ultra-wideband pulse producing method mainly containsClass, the one, utilize the switching characteristic of semiconductor devices to realize, this method is to utilize energy-storage travelling wave tube to fillElectric discharge obtains spike signal, more can be met the waveform of requirement through shaping circuit. SeparatelyA kind of is to utilize the logical device characteristic of digital circuit to produce needed pulse. Comparatively speaking,First kind of way implementation is versatile and flexible, and cost is low, and device is few, therefore becomes ultra-wideband pulse and producesRaw major way. The semiconductor devices difference that first kind of way adopts, the nanosecond pulse matter obtainingAmount is not quite similar, in pulsewidth, amplitude, can not show simultaneously good, and great majority input needWant crystal oscillator that square wave, different direct-flow voltage regulation source are provided, be unfavorable for integrated, therefore for this phenomenon,The present invention intends proposing a kind of ultra-broadband signal production method based on memristor characteristic. First kind of way is adoptedWith semiconductor devices difference, the ultra broadband nanosecond pulse characteristic obtaining is not quite similar, and is difficult to simultaneouslyTake into account amplitude and pulsewidth, and majority needs square wave excitation at input. Therefore for this phenomenon,The present invention intends proposing a kind of ultra-broadband signal production method based on memristor.
Summary of the invention
For above defect or the Improvement requirement of prior art, the object of the present invention is to provide a kind of energyEnough produce that frequency stability is high, adjustable extent is wide, pulse voltage amplitude is large and stable easily detect super wideThe ultra-wideband impulse signal generation device based on memristor of tape pulse signal.
A kind of ultra-wideband impulse signal generation device based on memristor provided by the invention, comprises and recalls resistanceDevice control circuit, square-wave oscillator circuit, voltage-multiplying circuit and ultra-wideband pulse produce circuit; Square wave oscillationThe input of circuit connects described memristor control circuit, and the input of described voltage-multiplying circuit is connected to instituteState the first output of square-wave oscillator circuit, the first input end that described ultra-wideband pulse produces circuit connectsBe connected to the output of described voltage-multiplying circuit, the second input that described ultra-wideband pulse produces circuit connectsTo the second output of described square-wave oscillator circuit, described ultra-wideband pulse produces the output of circuit and usesIn output ultra-wideband impulse signal.
Wherein, when work, under the control signal of memristor control circuit, memristor resistance is rule changeChange, and to produce an adjustable multi resonant square wave of frequency be late-class circuit provider wave excitation; Square wave oscillationWhen circuit has utilized TTL gate circuit bistable state to switch, feedback RC circuit is discharged and recharged to obtain height electricityThe switching of flat two states realizes square-wave signal and occurs; Ultra-wideband pulse produces circuit and utilizes microwave threeThe speed-sensitive switch characteristic of utmost point pipe discharges and recharges to obtain point by RC differential circuit in the time that on off state switchesPeak pulse, and form nanosecond spike, by voltage-multiplying circuit, described nanosecond spike is reachedTo ultra broadband launch requirements.
Wherein, square-wave oscillator circuit comprises the first not gate G1, the second not gate G2, resistance R, electric capacityC1, memristor M, metal-oxide-semiconductor Q, resistance R e and the 3rd not gate G3; Described the second not gate G2'sInput is connected to the output of described the first not gate G1, described in the anode of described memristor M passes throughResistance R is connected to the output of described the second not gate G2, and the negative terminal of described memristor M is connected to instituteState the grid of metal-oxide-semiconductor Q, the negative terminal of described memristor M is also connected to institute by described capacitor C 1State the input of the second not gate G2; The drain electrode of described metal-oxide-semiconductor Q meets power supply VCC, described MOSThe source electrode of pipe Q is connected with the input of described the 3rd not gate G3, the output of described the 3rd not gate G3Be connected to the input of described the first not gate G1; The output of described the 3rd not gate G3 is as described sideThe output of ripple oscillating circuit; Described resistance R e is connected to the input and ground of described the 3rd not gate G3Between.
Wherein, the first not gate G1, the second not gate G2 or the 3rd not gate G3 are TTL not gate.
Wherein, ultra-wideband pulse produces circuit and comprises: the first phase inverter G4, first order differential circuit,The second phase inverter G5, the 3rd phase inverter G6, adjustable resistance RT, triode T3, second level differential electricityRoad, resistance R 4 and diode D9; The input of the first phase inverter G4 produces as described ultra-wideband pulseThe second input of raw circuit, the input of described the second phase inverter G5 is by described first order differential electricityRoad is connected to the output of described the first phase inverter G4; The input of the 3rd phase inverter G6 is connected to instituteState the output of the second phase inverter G5, the base stage of triode T3 is connected to described the 3rd phase inverter G6Output, the grounded emitter of triode T3, the colelctor electrode of triode T3 is by the described second levelDifferential circuit is connected to the negative electrode of diode D9, and the anode of diode D9 is as described ultra-wideband pulseProduce the output of circuit; One end of described adjustable resistance RT produces circuit as described ultra-wideband pulseFirst input end be connected with described voltage-multiplying circuit, the other end of adjustable resistance RT is connected to triodeThe colelctor electrode of T3; Described resistance R 4 is connected between the anode and ground of described diode D9.
Wherein, first order differential circuit comprises the output that is connected in series in successively described the first phase inverter G4Capacitor C 2 and resistance R 2 between end and ground, described capacitor C 2 is connected in series with described resistance R 2End is connected with the input of described the second phase inverter G5.
Wherein, second level differential circuit comprises between the colelctor electrode and ground that is connected in series in successively described T3Capacitor C 3 and resistance R 3, described capacitor C 3 and described resistance R 3 be connected in series end and described twoThe negative electrode of utmost point pipe D9 connects.
Wherein, memristor control circuit comprises triode T1 and triode T2; The transmitting of triode T1The utmost point is connected with the emitter stage of triode T2, and the colelctor electrode of the colelctor electrode of triode T1 and triode T2 is equalGround connection, the base stage of the base stage of triode T1 and triode T2 is all for receiving outside control signal,The link of triode T1 and triode T2 is as the output of described memristor control circuit.
Wherein, voltage-multiplying circuit comprises multiple voltage doubling units that are connected in series; Described voltage doubling unit comprisesOne diode, the second diode, the first electric capacity and the second electric capacity; One end conduct of described the first electric capacityThe input of described voltage-multiplying circuit, the negative electrode of the other end of described the first electric capacity and described the first diodeConnect; The plus earth of described the first diode, the anodic bonding of the second diode is to the described the 1The negative electrode of utmost point pipe, the negative electrode of the second diode is as the output of described voltage-multiplying circuit; Described the second electricityHold and be connected between the negative electrode of described the second diode and the anode of described the first diode.
Advantage of the present invention is mainly reflected in:
(1) change because memristor resistance can be rule, the square wave that therefore square-wave oscillator circuit produces frequentlyRate is stablized adjustable;
(2) circuit element used is simple, volume is little, cost is low, voltage-multiplying circuit makes whole device onlyNeed a constant pressure source, easy of integration;
(3) pulse that the nanosecond ultra-wideband pulse generation circuit based on microwave triode produces can take into accountPulse amplitude and pulsewidth, avoided pursuing simply the low amplitude value that burst pulse causes millivolt level.
(4) can be widely used in the transmitting terminal of radio ultra wide band system.
Brief description of the drawings
Fig. 1 is the module knot of the ultra-wideband impulse signal generation device based on memristor provided by the inventionStructure theory diagram;
Fig. 2 is the concrete electricity of the ultra-wideband impulse signal generation device based on memristor provided by the inventionLu Tu;
Fig. 3 is that in the ultra-wideband impulse signal generation device based on memristor provided by the invention, square wave shakesSwing the output waveform schematic diagram of circuit;
Fig. 4 is ultra broadband in the ultra-wideband impulse signal generation device based on memristor provided by the inventionImpulse waveform schematic diagram;
Detailed description of the invention
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawingAnd embodiment, the present invention is further elaborated. Should be appreciated that described herein concreteEmbodiment only, in order to explain the present invention, is not intended to limit the present invention. In addition described,Involved technical characterictic in each embodiment of the present invention just can as long as do not form to conflict each otherMutually to combine.
The circuit structure of the ultra-broadband signal generation device based on memristor characteristic provided by the invention is simple,Can integrated level high, low in energy consumption, output pulse amplitude be high, can be widely used in radio ultra wide band system emitter;Having solved existing ultra-wideband pulse generation circuit dependence quartz oscillator or signal generator provides,Strengthen ultra-broadband signal disguise and improve ultra-wideband pulse generation device to application environmental adaptation degree.
A kind of ultra-wideband impulse signal based on memristor that Fig. 1 shows the embodiment of the present invention to be provided producesThe modular structure of generating apparatus, for convenience of explanation, only shows the part relevant to the embodiment of the present invention,Details are as follows:
Ultra-wideband impulse signal generation device based on memristor comprises that memristor control circuit 1, square wave shakeSwing circuit 2, voltage-multiplying circuit 3 and ultra-wideband pulse and produce circuit 4; Memristor control circuit 1 is by controlSignal processed is controlled memristor change in resistance rule, produces according to memristor change in resistance square-wave oscillator circuitThe square wave of raw different repetition rates; The square wave that square-wave oscillator circuit 2 produces produces electricity to ultra-wideband pulseRoad 4 and voltage-multiplying circuit 3 provide input stimulus; Voltage-multiplying circuit 3 is exported to ultra-wideband pulse and is produced circuitIn microwave triode direct current biasing is provided, guarantee that microwave triode can be operated on off state; Super wideTape pulse produces circuit can produce amplitude-4V, the ultra broadband negative polarity Gaussian pulse of pulsewidth 1ns. EnterOne step ground, the square-wave oscillator circuit based on memristor comprises that first order TTL not gate G1 output directly connectsSecond level TTL not gate G2 input, the resistance of the output of second level TTL not gate G2 by series connection andMemristor and capacitor C 1 form backfeed loop the output of second level TTL not gate G2 are fed back to its inputEnd, the positive terminating resistor of memristor, negative terminal connects respectively electric capacity and emitter amplifier MOSFET grid, penetratesUtmost point amplifier is delivered to third level TTL not gate G3 input, third level TTL not gate G3 in the output of source electrodeOutput feeds back to the input of first order not gate G1. The square-wave signal that whole square-wave oscillator circuit produces is from theThe output of the non-gate output terminal of three utmost point TTL, for ultra-wideband pulse produces circuit and voltage-multiplying circuit provides excitation.
Emitter-base bandgap grading amplifying circuit adopts MOSFET pipe, and its drain electrode directly meets reverse bias voltage VCC,Grid connects the negative pole of memristor, and source electrode is by resistance R e ground connection, and it is non-that source electrode output meets third level TTLDoor G3 input. Emitter-base bandgap grading amplifying circuit is non-with solving the too high third level TTL that causes of memristor resistanceDoor G3 cannot normally open.
Memristor control circuit comprises NPN type triode and positive-negative-positive triode, NPN type triodeColelctor electrode connects positive reversed bias voltage, and emitter stage connects the emitter stage of positive-negative-positive triode, positive-negative-positive triodeColelctor electrode connects negative bias voltage, the emitter stage of NPN type transistor emitter and positive-negative-positive triodePhase contact connects the anode of memristor, and memristor is born termination capacitor. By being set, control signal change recallsResistance device resistance and Changing Pattern thereof, thus the square-wave oscillator circuit based on memristor can be produced frequentlyThe square wave that rate is adjustable, subsequent conditioning circuit provides excitation.
The top electrode of memristor is pricked top electrode probe, and the bottom electrode of memristor is pricked bottom electrode probe,Upper/lower electrode probe is respectively as anode and the negative terminal of memristor. Memristor is done at memristor control circuitThere is memory function by lower resistance, can be rule and change, thus the side that square wave circuit for generating is producedRipple frequency also can be rule and change.
Ultra-wideband pulse produces circuit, the square wave that square-wave oscillator circuit produces by after phase inverter G4 throughFirst order RC differential circuit, RC differential circuit by square wave cut narrow after phase inverter G5 by two-stage cascade,G6 forms a square wave that pulsewidth is very narrow, is input to the base stage of microwave triode, microwave triode transmittingExtremely directly ground connection, the collector bias voltage of microwave triode is provided by voltage-multiplying circuit output. Microwave threeThe colelctor electrode of utmost point pipe is exported by continuing to cut narrow pulsewidth shape, electric capacity and resistance after the RC differential circuit of the second levelSchottky diode of node place Opposite direction connection, the positive input of diode connects by small resistorGround, ultra-wideband impulse signal is exported by the positive input of diode.
Voltage-multiplying circuit by the diode of 8 same model and electric capacity according to Fig. 2 module 3 circuit arrangement groupsBecome, its multiplication of voltage principle is: in the time that input square wave is low level, and loop no-output; When input square wave isHigh level UHTime, this level forms a loop by C4, D2, C5, D1, and D1, D2 are reasonThink diode, C4, C5 each self-charging of connectingIn the time that input square wave high level disappears, C4,C5 starts electric discharge, according to the known C4 of diode orientation, C5 course of discharge, the input voltage of C6For C4, C5 discharge voltage sum, be to the maximumC6 in C4, C5 charge and discharge process like thisIt is zero that input is similar to low level, and high level isSquare wave; 4 such loops in parallel,In the end D8 input obtainsDue to UHFor 5V, therefore only need 4Such loop just can make final output voltage reach the constant voltage of approximate 20V, is enough to ensure micro-Ripple triode always works on off state.
The square wave excitation that voltage-multiplying circuit can produce square wave circuit for generating is similar to and converts constant pressure source to, givesMicrowave triode provides DC offset voltage, guarantees that microwave triode can normally be operated on off state.Voltage-multiplying circuit makes whole Circuits System only need the constant pressure source of a 5V, can reduce circuit cost.
Beneficial effect of the present invention is: according to memristor characteristic, input by memristor control circuitControl signal, the resistance of memristor will be rule change, thereby change by memristor, resistance and electricityHold the time constant that discharges and recharges backfeed loop of composition, and then reach automatic change square-wave oscillator frequencyObject; The voltage that the square wave producing is exported an approximate constant voltage after by voltage-multiplying circuit is to microwave three utmost pointsPipe provides bias voltage can be operated on off state. The square wave producing is by RC differential circuit and twoLevel phase inverter is at the square wave of microwave triode base stage input pulsewidth 20ns, when microwave triode is in high speedWhen switching over, square-wave signal is again by forming after the RC differential circuit of the microwave triode colelctor electrode second levelBurst pulse, the Schottky diode by Opposite direction connection forms burst pulse shaping in the sharp arteries and veins of the about 1ns of pulsewidthPunching, the ultra-wideband pulse that instant the present invention will produce.
Advantage of the present invention is mainly reflected in:
(1) change because memristor resistance can be rule, the square wave that therefore square-wave oscillator circuit produces frequentlyRate is stablized adjustable;
(2) circuit element used is simple, volume is little, cost is low, voltage-multiplying circuit makes whole device onlyNeed a constant pressure source, easy of integration;
(3) pulse that the nanosecond ultra-wideband pulse generation circuit based on microwave triode produces can take into accountPulse amplitude and pulsewidth, avoided pursuing simply the low amplitude value that burst pulse causes millivolt level.
(4) can be widely used in the transmitting terminal of radio ultra wide band system.
Below in conjunction with accompanying drawing, do more detailed to the feature and advantage of ultra-broadband signal production method of the present inventionExplanation.
Refer to Fig. 1, for a kind of ultra-broadband signal based on memristor of the present invention produces the electric circuit constitute block diagram,The present invention includes memristor control circuit 1, square-wave oscillator circuit 2, voltage-multiplying circuit 3 and ultra-wideband pulseProduce circuit 4. Consult Fig. 2, described square-wave oscillator circuit, is characterized in that, first order TTLNot gate G1 output directly connects second level TTL not gate G2 input, the output of second level TTL not gate G2Resistance R and memristor M and capacitor C 1 by series connection form feedback circuit by second level TTL not gateThe output of G2 feeds back to its input, the positive terminating resistor of memristor, and negative terminal connects electric capacity respectively and emitter-base bandgap grading is putThe grid of large device MOSFET, emitter amplifier MOSFET meets third level TTL in the output of source electrodeNot gate G3 input, third level TTL not gate G3 output feeds back to the input of first order not circuit. WholeThe square-wave signal of individual square-wave oscillator circuit output is exported from the 3rd utmost point TTL not gate G3 output.
Emitter-base bandgap grading amplifying circuit adopts MOSFET pipe, and its drain electrode directly connects reverse bias voltage VCC, gridThe utmost point connects the negative pole of memristor, and source electrode is by resistance R e ground connection, and source electrode output connects the 3rd utmost point TTL not gateG3 input.
Memristor control circuit comprises NPN type triode and positive-negative-positive triode, NPN type triodeColelctor electrode connects positive reversed bias voltage, and emitter stage connects the emitter stage of positive-negative-positive triode, positive-negative-positive triodeColelctor electrode connects negative bias voltage, the emitter stage of NPN type transistor emitter and positive-negative-positive triodePhase contact connects the anode of memristor, and memristor is born termination capacitor.
Ultra-wideband pulse produces circuit, the square wave that square-wave oscillator circuit produces by after phase inverter through theOne-level RC differential circuit, cuts waveform after narrow through RC differential circuit defeated by the phase inverter of two-stage cascadeEnter the base stage to microwave triode, the direct ground connection of microwave triode emitter stage, the current collection of microwave triodeUtmost point bias voltage is provided by voltage-multiplying circuit output, and the colelctor electrode output of microwave triode is by second level RCAfter differential circuit, continue to cut narrow pulsewidth shape, a Schottky two is oppositely placed at the contact place of electric capacity and resistanceUtmost point pipe, the anode of diode is by low resistance grounding, and ultra-wideband impulse signal is defeated by the anode of diodeGo out. The square wave that square-wave oscillator circuit produces by after COMS phase inverter through RC differential circuit, RCDifferential circuit is cut waveform after narrow and is input to microwave triode by the CMOS phase inverter of two-stage cascadeBase stage, the direct ground connection of microwave triode emitter stage, the collector bias voltage of microwave triode is by multiplication of voltageCircuit output provides, and the colelctor electrode of microwave triode is exported by continuing to cut after the RC differential circuit of the second levelNarrow pulsewidth, the contact place Opposite direction connection Schottky diode of electric capacity and resistance, the output of diode is passed throughLow resistance grounding, ultra-wideband impulse signal is drawn by the output of diode.
Voltage-multiplying circuit is made up of diode and the electric capacity of 8 same model, up and down each four capacitance intervalArrange, above C4, C6, C8, C10 series connection, below C5, C7, C9, C11 series connection, C4 withC5 connects by oppositely placing diode, in like manner C5 and C6, C6 and C7, C7 and C8, C8 andBetween C9, C9 and C10, C10 and C11, be also connected like this diode, diode D1 positive inputGround connection, C10 output is placed diode with C11 outlet chamber forward. Suppose that power supply rigidly connects square wave while leading to and shakesSwing the output signal u of circuito1For high level, establish TTL phase inverter G1, G2 input terminal voltage is u1、u2, G2 output end voltage is u3, G3 input voltage u4, due to its two ends electricity that not yet charges of C1 nowPressure is zero, u2、u4For low level, circuit is in the first temporary stable state. Along with u3High level is by electricityResistance R and memristor M charge to C1, u4Raise gradually, until exceed the threshold voltage vt h of phase inverterTime, G3 upset, uo1＝u1Become low level, G1 is also overturn, u2Become high level, due toCapacitor C 1 voltage can not suddenly change, u4Also have a positive transition, keeping G3 output level is low level,Now circuit is in the second temporary stable state. Along with u2High level is the reverse charging to C1 through R, M, u4ByGradually be reduced to while being less than threshold voltage, G3 overturns again, and circuit is got back to again the first temporary stable state. So followRing has just produced the square wave of continuous oscillation. The work wave of circuit each point as shown in Figure 3. In Fig. 3TFillAs start time, utilize three parametric methods, can obtain the time that discharges and recharges and be:
In like manner, can try to achieve discharge time is:
Bring TTL gate circuit representative value U intoH＝3V，UL＝0.3V，Uth=1.4V, square wave oscillationThe cycle of device is:
T＝tFill+tPut＝1.9(M+R)C
f＝1/T＝1/1.9(M+R)C
In the time that memristor resistance M changes according to the control signal of memristor control circuit, square-wave oscillatorCycle and output frequency also accordingly change. Because the input load resistance M+R of G3 phase inverter existsVery large when memristor reaches maximum value, therefore between memristor negative terminal and G3 phase inverter, add one and penetrateUtmost point amplifying circuit, the value maximum of resistance R+M can reach 20M Ω like this, at G3 input voltageUnder constant condition, reducing its input resistance can normally work square-wave oscillator.
The square wave input that square-wave oscillator produces is anti-phase to the first order of nanosecond ultra-wideband pulse generation circuitThe positive input of device, this phase inverter can isolate before late-class circuit influence each other simultaneously can correction waveform.Square wave is through R2，C2Composition the first order differential circuit time discharge and recharge, form a spike, establish arteries and veinsWide is t1
Analyzed from circuit condition:
This spike is by the phase inverter constant square wave of forming frequency again of two-stage cascade, and pulsewidth ist1, get R according to above-mentioned formula2Be 140 Ω, according to can be calculated C2Can be micro-during for 200pFThe square wave that ripple transistor base input pulsewidth is 20ns. This square wave is added to the base stage of microwave triode,Microwave triode is operated on off state, improves pulse amplitude on the one hand, on the other hand due to microwave threeThe switching characteristic of utmost point pipe is run well than conventional switch, is conducive to improve the rise and fall edge of pulse. Warp againCross second level differential circuit, the spike that generation pulsewidth is 1ns, its account form is the same with above formula, withSample can obtain R in the time of output pulse width 1ns3Be 680 Ω, C3For 2pF. This spike is by high speed XiaoAfter special based diode 1N5711, form ultra-wideband pulse that pulsewidth is less than about 1ns as shown in Figure 4 and by surpassingBroadband dipole antenna is launched.
Due to the driving of microwave triode colelctor electrode reverse bias voltage and TTL not circuit, phase inverterVoltage difference, for fear of increasing a large direct-flow voltage regulation source, allows square-wave oscillator circuit pass through one doublyVolt circuit, can obtain the voltage of an intimate direct-flow voltage regulation source.
Get other parts of memristor sample and circuit and be connected, wherein the initial resistance M of memristor is1kΩ，R1For 1k Ω, capacitor C1During for 22pF, calculate the output of this square-wave oscillator according to formulaFrequency is 1MHz, has verified this result with oscilloscope measurement. Control signal control memristor resistance increasesDirection and thereby speed controlling party wave oscillator frequency increases or the trend that reduces and the speed of increase and decrease.
Observe this use novel by oscillograph, can measure this circuit by oscillograph and can produce oneThe negative spike of individual pulsewidth about 1 nanosecond, can reach-4V of pulse amplitude, the repetition rate of pulseThe square wave repetition rate producing with the square-wave oscillator circuit based on memristor is consistent.
Those skilled in the art will readily understand, the foregoing is only preferred embodiment of the present invention,Not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, etc.With replacement and improvement etc., within all should being included in protection scope of the present invention.
Claims (8)
1. the ultra-wideband impulse signal generation device based on memristor, is characterized in that, comprises and recallingResistance device control circuit (1), square-wave oscillator circuit (2), voltage-multiplying circuit (3) and ultra-wideband pulse produceRaw circuit (4);
The input of described square-wave oscillator circuit (2) connects described memristor control circuit (1), instituteThe input of stating voltage-multiplying circuit (3) is connected to the first output of described square-wave oscillator circuit (2),The first input end of described ultra-wideband pulse generation circuit (4) is connected to described voltage-multiplying circuit (3)Output, the second input that described ultra-wideband pulse produces circuit (4) is connected to described square wave oscillationThe second output of circuit (2), described ultra-wideband pulse produces the output of circuit (4) for defeatedGo out ultra-wideband impulse signal;
Described memristor control circuit (1) is controlled memristor change in resistance rule by control signal,Produce the square wave of different repetition rates according to memristor change in resistance square-wave oscillator circuit;
Described square-wave oscillator circuit (2) comprises the first not gate G1, the second not gate G2, resistance R, electricityHold C1, memristor M, metal-oxide-semiconductor Q, resistance R e and the 3rd not gate G3;
The input of described the second not gate G2 is connected to the output of described the first not gate G1, described in recallThe anode of resistance device M is connected to the output of described the second not gate G2 by described resistance R, described in recallThe negative terminal of resistance device M is connected to the grid of described metal-oxide-semiconductor Q, and the negative terminal of described memristor M also passes throughDescribed capacitor C 1 is connected to the input of described the second not gate G2;
The drain electrode of described metal-oxide-semiconductor Q meets power supply VCC, the source electrode of described metal-oxide-semiconductor Q and describedThe input of three not gate G3 connects, and the output of described the 3rd not gate G3 is connected to described the first not gateThe input of G1; The output of described the 3rd not gate G3 is defeated as described square-wave oscillator circuit (2)Go out end;
Described resistance R e is connected between the input and ground of described the 3rd not gate G3.
2. ultra-wideband impulse signal generation device as claimed in claim 1, is characterized in that, workTime, under the control signal of memristor control circuit, memristor resistance is rule variation, and produces oneThe multi resonant square wave that frequency is adjustable is late-class circuit provider wave excitation; Square-wave oscillator circuit has utilized TTLWhen gate circuit bistable state is switched, feedback RC circuit is discharged and recharged to obtain cutting of low and high level two statesBring and realize square-wave signal generation; Ultra-wideband pulse generation circuit utilizes the speed-sensitive switch of microwave triodeCharacteristic discharges and recharges to obtain spike by RC differential circuit in the time that on off state switches, and formsNanosecond spike, makes described nanosecond spike reach ultra broadband transmitting by voltage-multiplying circuit and wantsAsk.
3. ultra-wideband impulse signal generation device as claimed in claim 1, is characterized in that, described inThe first not gate G1, the second not gate G2 or the 3rd not gate G3 are TTL not gate.
4. ultra-wideband impulse signal generation device as claimed in claim 1, is characterized in that, described inUltra-wideband pulse produces circuit (4) and comprising: the first phase inverter G4, first order differential circuit (41),The second phase inverter G5, the 3rd phase inverter G6, adjustable resistance RT, triode T3, second level differential electricityRoad (42), resistance R 4 and diode D9;
The input of the first phase inverter G4 produces the second defeated of circuit (4) as described ultra-wideband pulseEnter end, the input of described the second phase inverter G5 is connected to by described first order differential circuit (41)The output of described the first phase inverter G4;
The input of the 3rd phase inverter G6 is connected to the output of described the second phase inverter G5, triodeThe base stage of T3 is connected to the output of described the 3rd phase inverter G6, the grounded emitter of triode T3,The colelctor electrode of triode T3 is connected to the moon of diode D9 by described second level differential circuit (42)The utmost point, the anode of diode D9 produces the output of circuit (4) as described ultra-wideband pulse;
One end of described adjustable resistance RT produces the first defeated of circuit (4) as described ultra-wideband pulseEnter end and be connected with described voltage-multiplying circuit (3), the other end of adjustable resistance RT is connected to triode T3Colelctor electrode;
Described resistance R 4 is connected between the anode and ground of described diode D9.
5. ultra-wideband impulse signal generation device as claimed in claim 4, is characterized in that, described inFirst order differential circuit (41) comprise the output that is connected in series in successively described the first phase inverter G4 withCapacitor C 2 between ground and resistance R 2, described capacitor C 2 and described resistance R 2 be connected in series end withThe input of described the second phase inverter G5 connects.
6. ultra-wideband impulse signal generation device as claimed in claim 4, is characterized in that, described inSecond level differential circuit (42) comprises the electricity between colelctor electrode and the ground that is connected in series in successively described T3Hold C3 and resistance R 3, described capacitor C 3 is held and described diode with being connected in series of described resistance R 3The negative electrode of D9 connects.
7. ultra-wideband impulse signal generation device as claimed in claim 1, is characterized in that, described inMemristor control circuit (1) comprises triode T1 and triode T2; The emitter stage of triode T1 withThe emitter stage of triode T2 connects, the equal ground connection of colelctor electrode of the colelctor electrode of triode T1 and triode T2,The base stage of the base stage of triode T1 and triode T2 is all for receiving outside control signal, triodeThe link of T1 and triode T2 is as the output of described memristor control circuit (1).
8. ultra-wideband impulse signal generation device as claimed in claim 1, is characterized in that, described inVoltage-multiplying circuit (3) comprising: multiple voltage doubling units that are connected in series (30); Described voltage doubling unit (30)Comprise the first diode, the second diode, the first electric capacity and the second electric capacity;
One end of described the first electric capacity is as the input of described voltage-multiplying circuit (3), described the first electric capacityThe other end be connected with the negative electrode of described the first diode;
The plus earth of described the first diode, the anodic bonding of the second diode is to described the one or two utmost pointThe negative electrode of pipe, the negative electrode of the second diode is as the output of described voltage-multiplying circuit (3);
Described the second electric capacity is connected to the negative electrode of described the second diode and the anode of described the first diodeBetween.
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| CN104571949B (en) * | 2014-12-22 | 2017-07-07 | 华中科技大学 | Realize calculating processor and its operating method merged with storage based on memristor |
| CN105976861B (en) * | 2016-05-17 | 2018-10-09 | 华南理工大学 | A kind of high-power memristor circuit realized using SPWM controls |
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