CN106953619B - Sub-periodic microwave pulse sequence generating device for cold atomic quantum state control - Google Patents
Sub-periodic microwave pulse sequence generating device for cold atomic quantum state control Download PDFInfo
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- CN106953619B CN106953619B CN201710277051.2A CN201710277051A CN106953619B CN 106953619 B CN106953619 B CN 106953619B CN 201710277051 A CN201710277051 A CN 201710277051A CN 106953619 B CN106953619 B CN 106953619B
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- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims abstract description 9
- 239000003990 capacitor Substances 0.000 claims description 35
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- 101100365087 Arabidopsis thaliana SCRA gene Proteins 0.000 claims description 9
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/64—Generators producing trains of pulses, i.e. finite sequences of pulses
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Abstract
The subcycle microwave pulse sequence generating device controlled by the cold atomic quantum state comprises a DDS excitation source unit, a power amplifier, an SRD signal generating and shaping circuit and a broadband antenna which are connected in sequence; the SRD signal generation and shaping circuit comprises a pulse generation circuit and a pulse shaping circuit. The invention solves the problem of longer time interval between pulses when the previous sub-periodic pulse is generated, pulse sequences with different time intervals can be obtained by adjusting the DDS, the pulse generating device is simplified, the operation is simple and convenient, the implementation is easier, and the pulse with narrower pulse width (within hundred picoseconds) can be generated; and by adding a pulse shaping part, the phenomenon of serious tailing of the previous pulse is solved.
Description
Technical Field
The invention relates to a subcycle microwave pulse sequence generating device.
Background
Ultra Wideband (UWB) technology is a new type of microwave communication technology developed in recent years, in which ultra wideband pulses have bandwidths on the order of several GHz and their pulses have fast rising and falling edges. The sub-period microwave pulse is an ultra-wideband microwave pulse with an oscillation period smaller than 1 period, has the characteristics of strong penetrating power, strong anti-interference capability, wide frequency band, strong anti-stealth capability and the like, is very suitable for short-distance communication, and has been widely applied to aspects such as hidden communication, through-wall radar, radar detection and the like. The ultra-wideband can also be applied to the manipulation of atoms, for example, a microwave pulse sequence can be used for acting on the atoms so as to manipulate the quantum states of the atoms, thereby realizing the energy level transition and population number transfer of the atoms, and playing an important role in researching the interaction between field intensity and substances in a subcycle.
The existing methods for generating monocycle or subcycle pulse by using more methods mainly comprise two methods, namely generating monocycle or subcycle pulse based on avalanche effect of avalanche diode and generating monocycle or subcycle pulse by utilizing tunneling effect of tunnel diode. Both methods are based on circuit methods, with which pulses on the order of nanoseconds and sub-nanoseconds can be generated. However, since the two methods require more components when designing the circuit, the waveform of the pulse is greatly distorted in the transmission process, such as jitter or ringing of the tail of the pulse. Thus, there are many inconveniences in practical research and practical application of the pulse.
Disclosure of Invention
The present invention is directed to overcoming the above-mentioned drawbacks of the prior art by providing a sub-periodic microwave pulse train generating device for cold atomic quantum state manipulation.
The subcycle microwave pulse sequence generating device controlled by cold atomic quantum state is characterized in that: the device comprises a DDS excitation source unit 1, a power amplifier 2, an SRD signal generation and shaping circuit 3 and a broadband antenna 4 which are connected in sequence; the SRD signal generation and shaping circuit 3 comprises a pulse generation circuit 31 and a pulse shaping circuit 32;
the pulse generation circuit 31 includes: the positive electrode of the DDS excitation source V1 is connected with the first end of the tuning capacitor C1 and the first end of the excitation inductor L1 and is connected with the ground, and the negative electrode of the DDS excitation source V1 is grounded with the second end of the tuning capacitor C1 and the positive electrode of the step recovery diode SRD; the second end of the excitation inductor L1 is connected with the first end of the first resistor R1, the negative electrode of the SRD and the first end of the first blocking capacitor C2, the second end of the first load resistor R1 is connected with the positive electrode of the first direct current bias voltage V2, and the negative electrode of the first direct current bias voltage V2 is grounded; the second end of the first blocking capacitor C2 is used as the output end of the pulse generating circuit 31 and is connected with the anode of the first Schottky diode SCR1 of the pulse shaping circuit 32;
the pulse shaping circuit 32 includes: the cathode of the first Schottky diode SCR1 is connected with the first end of the second resistor R2 and the first end of the second blocking capacitor C3; the second end of the second blocking capacitor C3 is connected with the cathode of the second Schottky diode SCR2, the first end of the third blocking capacitor C4 and the first end of the fourth resistor R4; the second end of the third blocking capacitor C4 is connected with the first end of the third resistor R3, the second end of the fourth resistor R4 is connected with the negative electrode of the second direct current bias voltage V3, and the positive electrode of the second direct current bias voltage V3, the second end of the third resistor R3, the second end of the second resistor and the positive electrode of the second Schottky diode SCR2 are all grounded.
In order to obtain a pulse sequence with shorter adjacent two pulse time intervals and simplify a subcycle microwave pulse sequence generating device and generate monocycle or subcycle microwave pulses with narrower pulse width, the invention utilizes a DDS to generate an excitation signal with adjustable frequency, excites a Step Recovery Diode (SRD) in the pulse generating device, generates a subcycle pulse sequence with single pulse width in hundred picoseconds, uses a shaping component and an adjusting component to shape the generated pulse, reduces the pulse tail oscillation phenomenon caused by impedance inexact matching and components in a circuit, and obtains pulses with better shapes, thereby obtaining different pulse sequences.
The technical scheme adopted for solving the technical problems is as follows: the characteristic of the adjustable frequency of the DDS is utilized to generate an excitation signal with a specific frequency, then the power of the excitation signal is amplified by a power amplifier, the amplified excitation signal is transmitted to a Step Recovery Diode (SRD), a single sub-periodic microwave pulse sequence with the width of about hundred picoseconds is generated by utilizing the step current turn-off characteristic of the Step Recovery Diode (SRD), a small capacitor with the width of about 0.1 to 0.5pF is added to a pulse generating circuit part based on the step recovery diode to serve as a tuning capacitor of the circuit, the resonance frequency of the circuit is adjusted, then a resistor is added after the pulse generating part, and the Schottky diode serves as a main device of a shaping part to shape the pulse.
The beneficial effects of the invention are as follows: the invention solves the problem of longer time interval between pulses when the previous sub-periodic pulse is generated, pulse sequences with different time intervals can be obtained by adjusting the DDS, the pulse generating device is simplified, the operation is simple and convenient, the implementation is easier, and the pulse with narrower pulse width (within hundred picoseconds) can be generated; and by adding a pulse shaping part, the phenomenon of serious tailing of the previous pulse is solved.
Drawings
Fig. 1 is a schematic diagram of the principles of the present invention.
Fig. 2 is a graph of the current-off characteristics of an SRD under sine wave excitation.
Fig. 3 is a circuit diagram of an SRD signal generation and shaping circuit.
The specific embodiment is as follows:
the invention is further described below with reference to the accompanying drawings.
The subcycle microwave pulse sequence generating device controlled by cold atomic quantum state is characterized in that: the device comprises a DDS excitation source unit 1, a power amplifier 2, an SRD signal generation and shaping circuit 3 and a broadband antenna 4 which are connected in sequence; the SRD signal generation and shaping circuit 3 comprises a pulse generation circuit 31 and a pulse shaping circuit 32;
the pulse generation circuit 31 includes: the positive electrode of the DDS excitation source V1 is connected with the first end of the tuning capacitor C1 and the first end of the excitation inductor L1 and is connected with the ground, and the negative electrode of the DDS excitation source V1 is grounded with the second end of the tuning capacitor C1 and the positive electrode of the step recovery diode SRD; the second end of the excitation inductor L1 is connected with the first end of the first resistor R1, the negative electrode of the SRD and the first end of the first blocking capacitor C2, the second end of the first resistor R1 is connected with the positive electrode of the first direct current bias voltage V2, and the negative electrode of the first direct current bias voltage V2 is grounded; the second end of the first blocking capacitor C2 is used as the output end of the pulse generating circuit 31 and is connected with the anode of the first Schottky diode SCR1 of the pulse shaping circuit 32;
the pulse shaping circuit 32 includes: the cathode of the first Schottky diode SCR1 is connected with the first end of the second resistor R2 and the first end of the second blocking capacitor C3; the second end of the second blocking capacitor C3 is connected with the cathode of the second Schottky diode SCR2, the first end of the third blocking capacitor C4 and the first end of the fourth resistor R4; the second end of the third blocking capacitor C4 is connected with the first end of the third resistor R3, the second end of the fourth resistor R4 is connected with the negative electrode of the second direct current bias voltage V3, and the positive electrode of the second direct current bias voltage V3, the second end of the third resistor R3, the second end of the second resistor and the positive electrode of the second Schottky diode SCR2 are all grounded.
See FIG. 1
The invention relates to a subcycle microwave pulse sequence generating device for cold atomic quantum state control, which comprises a DDS excitation source unit 1, a power amplifier 2, an SRD signal generating and shaping circuit 3 and a broadband antenna 4; the whole pulse sequence generation process comprises the following steps: the DDS excitation source unit 1 generates an excitation signal with a specific frequency, the frequency of the signal can be regulated and controlled by a DDS device in the excitation signal, the excitation signal with any frequency can be set, then the excitation signal is amplified by the power amplifier 2, and then enters the SRD signal generation and shaping circuit 3 to excite and generate a pulse sequence with the specific frequency, the pulse is shaped, and finally the pulse is received by the broadband antenna 4.
See FIG. 3
The SRD signal generating and shaping circuit 3 for sub-periodic microwave pulse generation comprises two parts, namely a pulse generating circuit 31 and a pulse shaping circuit 32.
The operation of the pulse generating circuit 31:
when the voltage difference between the signal and the voltage difference generated by the first direct current bias voltage V2 is negative, the step recovery diode SRD is in an on state, at this time, current passes through the step recovery diode SRD and charges the step recovery diode SRD, when the voltage difference generated by the excitation signal and the voltage difference generated by the first direct current bias voltage V2 is changed from negative to positive, the current switching-off characteristic of the step recovery diode SRD, namely, the step recovery diode SRD, is utilized, namely, the current rapidly reaches a reverse saturation state, is maintained for a period of time, the time is in ns level, and then the reverse discharge is rapidly performed, the discharge time is in ps level, so that the reverse current is instantaneously zero, after that, the excitation inductor L1 is excited at the cathode of the step recovery diode SRD to generate a sub-period microwave pulse, the tuning capacitor C1 plays a role of adjusting the resonant frequency of a circuit, and the first resistor R1 plays a role of protecting the circuit. The sub-periodic pulses resulting from this process enter the pulse shaping circuit 32 through the first blocking capacitor C2 for shaping.
The working process of the pulse shaping 32 circuit is as follows:
the sub-periodic microwave pulse transmitted by the first blocking capacitor C2 passes through the first Schottky diode SCR1, the first Schottky diode SCR1 only allows the part with positive voltage amplitude in the pulse to pass through, the part with negative voltage amplitude in the sub-periodic microwave pulse is removed after passing through the first Schottky diode SCR1, then the trailing part in the sub-periodic microwave pulse is attenuated after passing through the second resistor R2, then the threshold voltage of the second Schottky diode SCR2 is determined by the second DC bias voltage V3, when the voltage value of the second DC bias voltage V3 is adjusted to enable the threshold voltage of the second Schottky diode SCR2 to be exactly equal to the maximum value of the voltage amplitude of the trailing part of the sub-periodic microwave pulse transmitted by the front stage, the second Schottky diode SCR2 only allows the part with the voltage amplitude larger than the maximum value in the sub-periodic microwave pulse to pass through, therefore, the trailing phenomenon in the sub-periodic microwave pulse is basically eliminated after passing through the second Schottky diode SCR2, finally the sub-periodic microwave pulse is enabled to act as a third DC bias voltage of the third DC bias capacitor C4 to act as a third DC bias voltage of the third blocking capacitor C4, and the third DC blocking capacitor C4 is used as a third DC blocking capacitor, and the third DC blocking capacitor C4 is used for protecting the direct current blocking capacitor C4.
Claims (1)
1. The subcycle microwave pulse sequence generating device controlled by cold atomic quantum state is characterized in that: the device comprises a DDS excitation source unit (1), a power amplifier (2), an SRD signal generation and shaping circuit (3) and a broadband antenna (4) which are connected in sequence; the SRD signal generation and shaping circuit (3) comprises a pulse generation circuit (31) and a pulse shaping circuit (32);
the pulse generation circuit (31) includes: the positive electrode of the DDS excitation source V1 is connected with the first end of the tuning capacitor C1 and the first end of the excitation inductor L1, and the negative electrode of the DDS excitation source V1 is grounded with the second end of the tuning capacitor C1 and the positive electrode of the step recovery diode SRD; the second end of the excitation inductor L1 is connected with the first end of the first resistor R1, the negative electrode of the SRD and the first end of the first blocking capacitor C2, the second end of the first load resistor R1 is connected with the positive electrode of the first direct current bias voltage V2, and the negative electrode of the first direct current bias voltage V2 is grounded; the second end of the first blocking capacitor C2 is used as the output end of the pulse generating circuit (31) and is connected with the anode of the first Schottky diode SCR1 of the pulse shaping circuit (32);
the pulse shaping circuit (32) includes: the cathode of the first Schottky diode SCR1 is connected with the first end of the second resistor R2 and the first end of the second blocking capacitor C3; the second end of the second blocking capacitor C3 is connected with the cathode of the second Schottky diode SCR2, the first end of the third blocking capacitor C4 and the first end of the fourth resistor R4; the second end of the third blocking capacitor C4 is connected with the first end of the third resistor R3, the second end of the fourth resistor R4 is connected with the negative electrode of the second direct current bias voltage V3, and the positive electrode of the second direct current bias voltage V3, the second end of the third resistor R3, the second end of the second resistor and the positive electrode of the second Schottky diode SCR2 are all grounded.
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| CN108418570A (en) * | 2018-06-11 | 2018-08-17 | 南京邮电大学南通研究院有限公司 | A kind of narrow-pulse generation circuit in sequential equivalent system |
Citations (7)
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|---|---|---|---|---|
| US3832568A (en) * | 1973-08-10 | 1974-08-27 | Sperry Rand Corp | Circuit for generating a single high voltage subnanosecond pulse from a step recovery diode |
| CN101180797A (en) * | 2005-04-20 | 2008-05-14 | 新加坡科技研究局 | Apparatus and method for generating monocycle pulse |
| CN101227182A (en) * | 2008-01-29 | 2008-07-23 | 电子科技大学 | Narrow pulse signal generator based on clock drive |
| JP2010206711A (en) * | 2009-03-05 | 2010-09-16 | Furukawa Electric Co Ltd:The | Impulse generating circuit |
| WO2016130044A1 (en) * | 2015-02-11 | 2016-08-18 | Михаил Владимирович ЕФАНОВ | Generator of powerful nanosecond pulses (variants) |
| CN106374889A (en) * | 2016-08-31 | 2017-02-01 | 电子科技大学 | Fast pulse rising edge shaping device with controllable amplitude |
| CN206743204U (en) * | 2017-04-25 | 2017-12-12 | 浙江工业大学 | Sub- cycle microwave pulse sequence generating device for the manipulation of cold atom quantum state |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7509107B2 (en) * | 2005-01-05 | 2009-03-24 | Anritsu Company | Method and apparatus for extending the lower frequency operation of a sampler based VNA |
| US7265598B2 (en) * | 2005-05-25 | 2007-09-04 | Camero-Tech Ltd. | Narrow ultra wideband pulse generator |
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3832568A (en) * | 1973-08-10 | 1974-08-27 | Sperry Rand Corp | Circuit for generating a single high voltage subnanosecond pulse from a step recovery diode |
| CN101180797A (en) * | 2005-04-20 | 2008-05-14 | 新加坡科技研究局 | Apparatus and method for generating monocycle pulse |
| CN101227182A (en) * | 2008-01-29 | 2008-07-23 | 电子科技大学 | Narrow pulse signal generator based on clock drive |
| JP2010206711A (en) * | 2009-03-05 | 2010-09-16 | Furukawa Electric Co Ltd:The | Impulse generating circuit |
| WO2016130044A1 (en) * | 2015-02-11 | 2016-08-18 | Михаил Владимирович ЕФАНОВ | Generator of powerful nanosecond pulses (variants) |
| CN106374889A (en) * | 2016-08-31 | 2017-02-01 | 电子科技大学 | Fast pulse rising edge shaping device with controllable amplitude |
| CN206743204U (en) * | 2017-04-25 | 2017-12-12 | 浙江工业大学 | Sub- cycle microwave pulse sequence generating device for the manipulation of cold atom quantum state |
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