CN208316694U - A kind of narrow-pulse generation circuit in sequential equivalent system - Google Patents
A kind of narrow-pulse generation circuit in sequential equivalent system Download PDFInfo
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- CN208316694U CN208316694U CN201820893577.3U CN201820893577U CN208316694U CN 208316694 U CN208316694 U CN 208316694U CN 201820893577 U CN201820893577 U CN 201820893577U CN 208316694 U CN208316694 U CN 208316694U
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Abstract
The utility model discloses a kind of narrow-pulse generation circuits in sequential equivalent system, including sequentially connected crystal oscillator, edge sharpener, avalanche transistor single-valve amplification circuit and shaping network, the square-wave signal that the edge sharpener is used to generate crystal oscillator carries out edge sharpening；Square-wave signal after the avalanche transistor single-valve amplification circuit is used to sharpen carries out snowslide amplification, a Gaussian pulse signal is generated, to adjust the amplitude of pulse；The RC shaping network is used to Gaussian pulse signal carrying out shaping, is adjusted to the bottom pulse width of pulse, forms a narrow pulse signal.The utility model narrow pulse generator structure is simple, and bottom pulse width is narrow, is conducive to the signal-to-noise ratio for improving entire sequential sampling system.
Description
Technical field
The utility model relates to electronic field, in particular to the burst pulse in Ground Penetrating Radar transmitting signal and sample circuit connects
Receive circuit.
Background technique
In recent years, ultra-wideband ground-penetrating radar (uw-gpr) is applied to the structure detection of means of transportation as a kind of non-destructive testing technology,
It is ultra wide band due to receiving signal, pulse is extremely narrow, and frequency is extremely broad.If the reality used using traditional ground penetrating radar system
When the mode that samples acquire Gpr Signal, i.e. sample frequency is at least greater than 2 times of signal frequency.Ultra wide band is answered
With, such as the band of signal is wider than 1GHz, due to being limited by sampling thheorem, generally requires the high speed that sample rate is greater than 2GHz
Integrated A/D chip or high-speed sampling equipment.And the integrated A/D chip cost of 2GHz sample rate is very high at present, general several hundred dollars.
High-speed sampling equipment there is also it is at high cost, volume is larger the disadvantages of.What furthermore A/D was converted refers mainly to indicate sampling rate and adopts
Sample precision, and the two indexs are the developing conflict of A/D, so A/D chip is often high sampling rate, precision
Low or sampling precision is high but sampling rate is lower, or compromise considers.
From present technology and product, low speed, the data acquisition technology of low resolution are quite mature, realize
It is easier, monolithic ADC can be met the requirements, the stability and reliability of product are unquestionable.And the data of high speed are adopted
Collection technology is the forward position of Information base.China's High speed data acquisition relatively falls behind at present, is China's information technology
Bottleneck, this of research and development technology have the good wide prospect of important value for the dual-use field in China.Mesh
Preceding most popular high speed output technology has more AD parallel sampling technologies and random sampling technique.But both technologies
The data dependence of sampling technique all is accurately controlled circuit and signal recombination circuit, therefore in terms of controlling with signal processing
Algorithm comparison is complicated.
External existing data acquisition is expensive, volume is larger, two kinds of complicated for operation, sample frequency and sampling precision not
It can unify well.Therefore, although external relatively early using technology development, one kind is relatively inexpensive, behaviour does simply
Sample circuit still requires study.
In conclusion a large amount of work has been done by domestic and international researcher, company in terms of the research of high-speed data acquistion system
Make, but it is domestic also very big with external difference tool in terms of High speed data acquisition.Domestic high-speed sampling technology is immature
And the feasibility of acquisition system is not high.And external High speed data acquisition feasibility is high but complicated for operation, expensive.
So designing a simple high speed output system specifically biggish meaning.
Chinese patent 201620801589.X discloses a kind of tunable trigger-type ultra wideband narrow-pulse generation device and side
Method controls high speed signal generating unit by control unit and sends unipolarity square-wave signal；Bipolarity trigger unit is by monopole
Property square-wave signal is converted to bipolarity square-wave signal；Bipolarity square-wave signal is converted to bipolarity sharp pulse by differentiator
Signal；Snowslide unit is motivated by bipolarity sharp pulse signal, generates positive polarity zeroth order Gaussian pulse signal；Pulse shaping unit
Positive polarity zeroth order Gaussian pulse signal is converted into negative polarity single order Gaussian pulse signal；Edge detecting unit detects negative polarity one
Half pulse width of rank Gaussian pulse signal；Control unit receives pulse width information, control tuner tuning bipolarity triggering
The high and low level voltage of unit forms feedback；When control unit detects that half pulse width is minimum value, complete to tuner
Control.
Utility model content
Purpose of utility model: in order to overcome the deficiencies in the prior art, the utility model provides one kind and is simple and efficient
For the narrow-pulse generation circuit in sequential equivalent system.
Technical solution: to achieve the above object, the technical solution adopted in the utility model are as follows:
A kind of narrow-pulse generation circuit in sequential equivalent system, including crystal oscillator, edge sharpener, snowslide
Triode single-valve amplification circuit, RC shaping network, the crystal oscillator, edge sharpener, avalanche transistor single-valve amplification circuit with
And shaping network is sequentially connected and connects, in which:
The square-wave signal that the edge sharpener is used to generate crystal oscillator carries out edge sharpening；
Square-wave signal after the avalanche transistor single-valve amplification circuit is used to sharpen carries out snowslide amplification, generates one
Gaussian pulse signal, to adjust the amplitude of pulse；
The RC shaping network is used to Gaussian pulse signal carrying out shaping, adjusts to the bottom pulse width of pulse
Section, forms a narrow pulse signal.
Preferred: the edge sharpener includes one R1 of resistance, one C1 of capacitor, two R2 of resistance, step-recovery diode
SRD, two C2 of capacitor, six R6 of resistance, wherein one R1 of resistance, one C1 of capacitor, two C2 of capacitor, six R6 of resistance, power cathode according to
Secondary connection, crystal oscillator one end ground connection, another one R1 of terminating resistor；And the one end the step-recovery diode SRD is grounded, it is another
End is connected between two C2 of one C1 of capacitor and capacitor, and two one end R2 positive pole of resistance, the other end is connected to one C1 of capacitor
Between two C2 of capacitor.
It is preferred: the avalanche transistor single-valve amplification circuit include one R5 of resistance, avalanche transistor Q1, three R3 of resistance,
One L1 of inductance, four R4 of resistance, three C3 of capacitor, four C4 of capacitor, seven R7 of resistance, wherein described one one end R5 of resistance and two C2 of capacitor
One end connection of power cathode is connected, and the other end of one R5 of resistance is connect with the base stage of avalanche transistor Q1, the snowslide three
The emitter of pole pipe Q1 is grounded, and collector, three R3 of resistance, one L1 of inductance, four R4 of resistance, positive pole are sequentially connected, described
Three one end C3 of capacitor ground connection, the other end are connected between one L1 of inductance, four R4 of resistance；Described four one end C4 of capacitor and three pole of snowslide
The collector of pipe Q1 connects, and the other end is connect with seven R7 of resistance, seven R7 of resistance ground connection.
Preferred: the RC shaping network includes five C5 of capacitor, Schottky diode D2, coupled capacitor Cc, load resistance
RL, nine R9 of resistance, two L2 of inductance, six C6 of capacitor, ten R10 of resistance, wherein one end of five C5 of capacitor be connected to four C4 of capacitor and electricity
It hinders between seven R7, and the other end of five C5 of capacitor, Schottky diode D2, coupled capacitor Cc, load resistance RLIt is sequentially connected, institute
State load resistance RLGround connection；One end of nine R9 of resistance is connected between capacitor five C5 and Schottky diode D2, resistance nine
The other end, two L2 of inductance, ten R10 of resistance of R9 is sequentially connected, and ten R10 of resistance meets positive pole, six C6 mono- of capacitor
End ground connection, the other end are connected between ten R10 of two L2 of inductance and resistance.
The utility model compared with prior art, has the advantages that
The utility model has effectively achieved the design acquisition of narrow pulse generator, entire burst pulse electricity using simple circuit
Line structure is simple, feasibility is high, is advantageous to acquisition and processing to radar signal.
Detailed description of the invention
Fig. 1 is that burst pulse generates analogous diagram.
The edge Fig. 2 sharpener figure.
Fig. 3 is burst pulse emulation.
Fig. 4 is burst pulse actual measurement.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the utility model is furtherd elucidate, it should be understood that these examples are only used for
Bright the utility model rather than limitation the scope of the utility model, after having read the utility model, those skilled in the art
Member falls within the application range as defined in the appended claims to the modification of the various equivalent forms of the utility model.
A kind of narrow-pulse generation circuit in sequential equivalent system, including crystal oscillator, edge sharpener, snowslide
Triode single-valve amplification circuit, RC shaping network, the crystal oscillator, edge sharpener, avalanche transistor single-valve amplification circuit with
And shaping network is sequentially connected and connects, entire pulse-generating circuit is made of SRD and avalanche transistor, and circuit structure is simple, is stablized
Property it is high, in which:
The adjustable square-wave signal of delay that the edge sharpener is used to generate crystal oscillator carries out edge sharpening；It is sharp
Square-wave signal after change is sent into avalanche transistor single-valve amplification circuit excitation avalanche transistor and avalanche breakdown occurs.The edge is sharp
Changing circuit includes one R1 of resistance, one C1 of capacitor, two R2 of resistance, step-recovery diode SRD, two C2 of capacitor, six R6 of resistance,
In, one R1 of resistance, one C1 of capacitor, two C2 of capacitor, six R6 of resistance, power cathode are sequentially connected, crystal oscillator one end ground connection,
Another one R1 of terminating resistor；And the one end the step-recovery diode SRD is grounded, the other end is connected to one C1 of capacitor and capacitor
Between two C2, two one end R2 positive pole of resistance, the other end is connected between two C2 of one C1 of capacitor and capacitor.Crystal oscillator generates
Square-wave signal by the edge step-recovery diode SRD sharpen, pulse signal arrival before, step-recovery diode SRD
Since DC offset voltage acts on, it is in forward conduction state, stores carrier at this time；When pulse arrives, step is restored
Diode SRD is in reverse-biased, consumes the carrier of storage at this time, when carrier depletion totally when, at once occur cut-off shape
State is raised current potential moment.It can be achieved to sharpen the rising edge of input square wave.In addition, one R1 of resistance, one C1 of capacitor are by crystal oscillator
The square-wave signal of generation carries out rising edge sharpening, and two R2 of resistance, six R6 of resistance constitute differential circuit, to step-recovery diode
Signal after SRD is sharpened the edge that differential sharpens extraction signal, realize generate a lower pulse signal of amplitude at this time.
Square wave rising edge 1ns or so, i.e. 0.9-1.1ns after the sharpening.
Square-wave signal after the avalanche transistor single-valve amplification circuit is used to sharpen carries out snowslide amplification, generates one
Gaussian pulse signal, to adjust the amplitude of pulse；The avalanche transistor single-valve amplification circuit includes one R5 of resistance, three pole of snowslide
Pipe Q1, three R3 of resistance, one L1 of inductance, four R4 of resistance, three C3 of capacitor, four C4 of capacitor, seven R7 of resistance, wherein one R5 of resistance
One end connect one end connection of power cathode with two C2 of capacitor, and the base stage of the other end of one R5 of resistance and avalanche transistor Q1 connect
It connects, the emitter ground connection of the avalanche transistor Q1, and collector, three R3 of resistance, one L1 of inductance, four R4 of resistance, positive pole
It is sequentially connected, three one end C3 of capacitor ground connection, the other end is connected between one L1 of inductance, four R4 of resistance；Four C4 of capacitor
One end is connect with the collector of avalanche transistor Q1, and the other end is connect with seven R7 of resistance, seven R7 of resistance ground connection.Wherein, resistance four
R4, three C3 of capacitor constitute differential circuit, isolation signals.Appear part triggering avalanche three of the lower pulse signal of amplitude in pulse
Avalanche breakdown occurs for pole pipe, and Gaussian pulse signal is generated after avalanche breakdown.Square-wave signal after sharpening is as avalanche transistor
Input signal using avalanche transistor avalanche multiplication effect combination shaping network shaping after form narrow pulse signal.
The RC shaping network is used to Gaussian pulse signal carrying out shaping, adjusts to the bottom pulse width of pulse
Section, forms a narrow pulse signal.It can be according to the waveform of pulse width and impulse amplitude realization narrow pulse generator needed for system
It adjusts.The RC shaping network includes five C5 of capacitor, Schottky diode D2, coupled capacitor Cc, load resistance RL, resistance nine
R9, two L2 of inductance, six C6 of capacitor, ten R10 of resistance, wherein one end of five C5 of capacitor be connected to four C4 of capacitor and seven R7 of resistance it
Between, and the other end of five C5 of capacitor, Schottky diode D2, coupled capacitor Cc, load resistance RLIt is sequentially connected, the load electricity
Hinder RLGround connection；One end of nine R9 of resistance is connected between capacitor five C5 and Schottky diode D2, and nine R9's of resistance is another
End, two L2 of inductance, ten R10 of resistance are sequentially connected, and ten R10 of resistance connects positive pole, and described six one end C6 of capacitor is grounded, separately
One end is connected between ten R10 of two L2 of inductance and resistance.In order to reduce the width of Gaussian pulse, realized using Schottky diode
The part higher than tube voltage drop is connected in the interception of pulse.Gaussian pulse signal after interception carries out whole by RC network
Shape completes the adjusting of bottom pulse width and amplitude according to actual needs.Common emitter amplifying circuit is passed through in the burst pulse part of production
Realize reversed, generation a pair synchronizes sampling and keep signal.Can effectively control sampling switch.And nine R9 of resistance,
Two L2 of inductance, six C6 of capacitor, ten R10 of resistance constitute voltage offset electric circuit, carry out direct current biasing.
The square-wave signal that crystal oscillator generates is sharpened by the edge step-recovery diode SRD, before pulse signal arrival, rank
Recovery diode SRD is jumped since DC offset voltage acts on, forward conduction state is in, stores carrier at this time；Work as pulse
When arrival, step-recovery diode SRD is in reverse-biased, consumes the carrier of storage at this time, when carrier depletion totally when,
Occur off state at once, is raised current potential moment.Therefore the rising edge steepness to input signal can be realized.Due to snowslide three
The avalanche multiplication effect of pole pipe and the edge steepness of pulse signal are related, therefore differential circuit is by capacitor C2It is formed with resistance R6,
For extracting the edge of square-wave signal, and its duty ratio is reduced, is more advantageous to triode in this way and avalanche multiplication effect occurs.
Voltage source provides the DC offset voltage of avalanche breakdown for avalanche transistor, is snowslide before square-wave signal arrival
Triode is in critical avalanche condition.One L of inductance1For voltage filter inductance.Before avalanche breakdown occurs, bias voltage is to electricity
Hold two C2It charges, charge derivative constant τ=(R3+R4)C2, R3Value cannot be too small, the otherwise partial pressure on avalanche transistor
Greatly, the power consumption of entire snowslide circuit is caused to increase.Derivative constant τ in the avalanche transistor single-valve amplification circuit is less than positive arteries and veins
The width of trimming edge.Since avalanche pulse is negative pulse, intercepted using Schottky diode output pulse waveform.Due to Xiao
The reversed deadline of special based diode is very short, and the forward conduction time to reversed deadline only needs tens picoseconds.It therefore can
To realize that the signal that will be above threshold voltage passes through with it, this threshold voltage is by VdIt determines.Added according to pulse width in rear class
Enter RC network function, RC shaping network is by coupled capacitor CCWith load resistance RLComposition.
Impulse amplitude is bigger if the RC constant the big, while bottom pulse width is wider；The similarly arteries and veins if RC constant is smaller
It is smaller to rush amplitude.It needs to select reasonable RC value according to time pulse demand in the design process.
The narrow pulse generator structure of the utility model is simple, and bottom pulse width is narrow, is conducive to improve entire sequential sampling
The signal-to-noise ratio of system.
The above is only the preferred embodiment of the utility model, it should be pointed out that: for the common skill of the art
For art personnel, without departing from the principle of this utility model, several improvements and modifications can also be made, these improve and
Retouching also should be regarded as the protection scope of the utility model.
Claims (6)
1. a kind of narrow-pulse generation circuit in sequential equivalent system, it is characterised in that: sharpened including crystal oscillator, edge
Circuit, avalanche transistor single-valve amplification circuit, RC shaping network, the crystal oscillator, edge sharpener, avalanche transistor single tube are put
Big circuit and shaping network are sequentially connected and connect, in which:
The square-wave signal that the edge sharpener is used to generate crystal oscillator carries out edge sharpening；
Square-wave signal after the avalanche transistor single-valve amplification circuit is used to sharpen carries out snowslide amplification, generates a Gauss
Pulse signal, to adjust the amplitude of pulse；
The RC shaping network is used to Gaussian pulse signal carrying out shaping, the bottom pulse width of pulse is adjusted, shape
At a narrow pulse signal.
2. according to claim 1 for the narrow-pulse generation circuit in sequential equivalent system, it is characterised in that: described
Edge sharpener includes one R1 of resistance, one C1 of capacitor, two R2 of resistance, step-recovery diode SRD, two C2 of capacitor, resistance six
R6, wherein one R1 of resistance, one C1 of capacitor, two C2 of capacitor, six R6 of resistance, power cathode are sequentially connected, described crystal oscillator one end
Ground connection, another one R1 of terminating resistor；And the one end the step-recovery diode SRD be grounded, the other end be connected to one C1 of capacitor and
Between two C2 of capacitor, two one end R2 positive pole of resistance, the other end is connected between two C2 of one C1 of capacitor and capacitor.
3. according to claim 1 for the narrow-pulse generation circuit in sequential equivalent system, it is characterised in that: described
Avalanche transistor single-valve amplification circuit includes one R5 of resistance, avalanche transistor Q1, three R3 of resistance, one L1 of inductance, four R4 of resistance, electricity
Hold three C3, four C4 of capacitor, seven R7 of resistance, wherein one end that described one one end R5 of resistance connect power cathode with two C2 of capacitor connects
It connects, and the other end of one R5 of resistance is connect with the base stage of avalanche transistor Q1, the emitter ground connection of the avalanche transistor Q1, and
Collector, three R3 of resistance, one L1 of inductance, four R4 of resistance, positive pole are sequentially connected, three one end C3 of capacitor ground connection, another
End is connected between one L1 of inductance, four R4 of resistance；Described four one end C4 of capacitor is connect with the collector of avalanche transistor Q1, another
End is connect with seven R7 of resistance, seven R7 of resistance ground connection.
4. according to claim 1 for the narrow-pulse generation circuit in sequential equivalent system, it is characterised in that: described
RC shaping network includes five C5 of capacitor, Schottky diode D2, coupled capacitor Cc, load resistance RL, nine R9 of resistance, inductance two
L2, six C6 of capacitor, ten R10 of resistance, wherein one end of five C5 of capacitor is connected between seven R7 of four C4 of capacitor and resistance, and capacitor
The other end, Schottky diode D2, coupled capacitor Cc, the load resistance R of five C5LIt is sequentially connected, the load resistance RLGround connection；
One end of nine R9 of resistance is connected between capacitor five C5 and Schottky diode D2, the other end, the inductance two of nine R9 of resistance
L2, ten R10 of resistance are sequentially connected, and ten R10 of resistance connects positive pole, six one end C6 of capacitor ground connection, other end connection
Between ten R10 of two L2 of inductance and resistance.
5. according to claim 1 for the narrow-pulse generation circuit in sequential equivalent system, it is characterised in that: described
Derivative constant τ in avalanche transistor single-valve amplification circuit is less than the width at positive pulse edge.
6. according to claim 1 for the narrow-pulse generation circuit in sequential equivalent system, it is characterised in that: described
Square wave rising edge 0.9-1.1ns after the sharpening of edge sharpener.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108418570A (en) * | 2018-06-11 | 2018-08-17 | 南京邮电大学南通研究院有限公司 | A kind of narrow-pulse generation circuit in sequential equivalent system |
| CN117254792A (en) * | 2023-11-20 | 2023-12-19 | 深圳安德空间技术有限公司 | Gaussian monopulse generation circuit based on SRD |
-
2018
- 2018-06-11 CN CN201820893577.3U patent/CN208316694U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108418570A (en) * | 2018-06-11 | 2018-08-17 | 南京邮电大学南通研究院有限公司 | A kind of narrow-pulse generation circuit in sequential equivalent system |
| WO2019237733A1 (en) * | 2018-06-11 | 2019-12-19 | 南京邮电大学南通研究院有限公司 | Narrow pulse generation circuit used in sequential equivalent sampling system |
| US11309871B2 (en) | 2018-06-11 | 2022-04-19 | Nantong Institute of Nanjing University of Posts and Telecommunications Co., Ltd. | Narrow pulse generation circuit used in sequential equivalent sampling system |
| CN117254792A (en) * | 2023-11-20 | 2023-12-19 | 深圳安德空间技术有限公司 | Gaussian monopulse generation circuit based on SRD |
| CN117254792B (en) * | 2023-11-20 | 2024-01-30 | 深圳安德空间技术有限公司 | Gaussian monopulse generation circuit based on SRD |
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