CN117254792B - Gaussian monopulse generation circuit based on SRD - Google Patents
Gaussian monopulse generation circuit based on SRD Download PDFInfo
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- CN117254792B CN117254792B CN202311544933.2A CN202311544933A CN117254792B CN 117254792 B CN117254792 B CN 117254792B CN 202311544933 A CN202311544933 A CN 202311544933A CN 117254792 B CN117254792 B CN 117254792B
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- 238000011084 recovery Methods 0.000 claims description 87
- 101100310953 Arabidopsis thaliana SRD2 gene Proteins 0.000 claims description 36
- 101100388638 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) ECM23 gene Proteins 0.000 claims description 36
- 101100310949 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SRD1 gene Proteins 0.000 claims description 22
- 101100310954 Caenorhabditis elegans srd-2 gene Proteins 0.000 claims description 12
- 238000004891 communication Methods 0.000 abstract description 3
- 230000002194 synthesizing effect Effects 0.000 abstract description 2
- 230000000149 penetrating effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/28—Details of pulse systems
- G01S7/282—Transmitters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/86—Generating pulses by means of delay lines and not covered by the preceding subgroups
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention provides a Gaussian monopulse generation circuit based on SRD, which comprises: the device comprises a first Gaussian pulse generation circuit, a second Gaussian pulse generation circuit, a microstrip delay line and a balun device, wherein the first Gaussian pulse generation circuit is connected with one end of the microstrip delay line, and the balun device is respectively connected with the other end of the microstrip delay line and the second Gaussian pulse generation circuit; the first Gaussian pulse generation circuit and the second Gaussian pulse generation circuit adopt the same circuit structure and respectively generate the same first Gaussian pulse and the same second Gaussian pulse; and after the first Gaussian pulse passes through the microstrip delay line, generating a phase difference relative to the second Gaussian pulse, and finally synthesizing a Gaussian single pulse through the balun device. The synthesized Gaussian monopulse output by the invention has the characteristics of high power and narrow pulse width, has a simpler circuit structure, is low in cost and easy to realize, and can be widely applied to the fields of military radars, ranging, positioning and communication systems.
Description
Technical Field
The invention relates to a Gaussian monopulse generation circuit, in particular to a Gaussian monopulse generation circuit based on SRD.
Background
In the field of ground penetrating radars, the requirements for the radar are high power, which in practice is reflected in the depth at which the buried objects can be detected, and high resolution, which is reflected in the minimum distance at which different buried objects can be resolved. The characteristics of high detection depth and high resolution of the ground penetrating radar respectively provide high requirements on the transmitted pulse power and pulse width.
The pulse suitable for the ground penetrating radar should be a Gaussian single pulse with less low frequency component and direct current so as to be beneficial to antenna radiation. However, the gaussian monopulse generating circuit in the prior art not only adopts a relatively complex circuit structure, thereby resulting in higher cost, but also can not generate a gaussian monopulse with narrow pulse width (narrow pulse width for short) and high pulse power, and can not meet the detection requirement of the ground penetrating radar which is a special application field.
Disclosure of Invention
The invention aims to provide a Gaussian single pulse generating circuit capable of generating narrow pulse width and high pulse power.
In this regard, the present invention provides a SRD-based gaussian monopulse generation circuit comprising: the device comprises a first Gaussian pulse generation circuit, a second Gaussian pulse generation circuit, a microstrip delay line and a balun device, wherein the first Gaussian pulse generation circuit is connected with one end of the microstrip delay line, and the balun device is respectively connected with the other end of the microstrip delay line and the second Gaussian pulse generation circuit; the first Gaussian pulse generation circuit comprises a rectangular pulse source, a resistor R1, a resistor R2, a step recovery diode SRD1, a step recovery diode SRD2 and an inductor L2, wherein one end of the rectangular pulse source is grounded, the other end of the rectangular pulse source is respectively connected with the negative pole of the step recovery diode SRD1 and one end of the resistor R1, the positive pole of the step recovery diode SRD1 is grounded, the other end of the resistor R1 is connected with a negative voltage power supply through the inductor L2, the negative pole of the step recovery diode SRD2 is connected with the negative pole of the step recovery diode SRD1, the positive pole of the step recovery diode SRD2 is grounded through the resistor R2, and the positive pole of the step recovery diode SRD2 is connected to the microstrip delay line; the first Gaussian pulse generating circuit and the second Gaussian pulse generating circuit adopt the same circuit structure, wherein the first Gaussian pulse generating circuit and the second Gaussian pulse generating circuit generate the same Gaussian pulse at the same time, the first Gaussian pulse generated by the first Gaussian pulse generating circuit generates a phase difference relative to the second Gaussian pulse generated by the second Gaussian pulse circuit after passing through the microstrip delay line, and the balun device synthesizes the first Gaussian pulse and the second Gaussian pulse after passing through the microstrip delay line into a Gaussian single pulse.
The invention further improves that the first gaussian pulse generating circuit further comprises an inductor L1, one end of the inductor L1 is connected with the rectangular pulse source, and the other end of the inductor L1 is respectively connected with the cathode of the step recovery diode SRD1, the resistor R1 and the cathode of the step recovery diode SRD 2.
The invention further improves that the first Gaussian pulse generation circuit further comprises a diode D1 and a resistor R3, wherein the positive electrode of the diode D1 is connected with the positive electrode of the step recovery diode SRD2, the negative electrode of the diode D1 is grounded through the resistor R3, and the negative electrode of the diode D1 is connected with the microstrip delay line.
A further improvement of the present invention is that the diode D1 is a schottky diode.
A further improvement of the invention is that by varying the reverse recovery time of the step recovery diode SRD2Regulating and controlling the pulse width time of the Gaussian pulse generated by the first Gaussian pulse generation circuit, wherein the reverse recovery time of the step recovery diode SRD2 is +.>The calculation formula of (2) is as follows: />Wherein->Minority carrier lifetime for the step recovery diode SRD 2; />A forward current magnitude for the step recovery diode SRD 2; />The reverse current magnitude for the step recovery diode SRD 2.
A further improvement of the invention is that the reverse current magnitude of the step recovery diode SRD2The approximate calculation formula of (a) is: />Wherein->Is the conduction voltage drop of the diode D1, < >>Is the maximum voltage that can be provided on the negative side of the step recovery diode SRD2, R2 is the resistance of the resistor R2, and R3 is the resistance of the resistor R3.
A further improvement of the invention is the maximum voltage that can be provided on the negative side of the step recovery diode SRD2The calculation formula of (2) is: />Wherein->Is the high level voltage of the rectangular pulse emitted by the rectangular pulse source, < >>Is the equivalent resistance of the rectangular pulse source.
The invention further improves the method by adjusting the length of the microstrip delay line in real time to realize the control of the phase difference between the first Gaussian pulse and the second Gaussian pulse, and recording the waveform correspondingly output by the balun device until the output waveform meets the preset Gaussian monopulse waveform requirement.
Compared with the prior art, the method has the advantages that the first Gaussian pulse generation circuit and the second Gaussian pulse generation circuit respectively generate the first Gaussian pulse and the second Gaussian pulse with the same narrow pulse width based on the SRD step diode circuit, the first Gaussian pulse generates a phase difference with the second Gaussian pulse after passing through the microstrip delay line, finally the balun device synthesizes the Gaussian single pulse, and the output synthesized Gaussian single pulse has the characteristics of high power and narrow pulse width, so that the method is very suitable for the special application field of the ground penetrating radar. The circuit has a simpler circuit structure, is low in cost and easy to realize, and can be widely applied to the fields of military radars, ranging, positioning and communication systems.
Drawings
FIG. 1 is a schematic circuit diagram of one embodiment of the present invention;
FIG. 2 is a schematic diagram of the composite principle of Gaussian monopulses according to an embodiment of the invention;
fig. 3 is a schematic diagram of a gaussian pulse test waveform according to an embodiment of the present invention.
The attached drawings are identified: 1-a first gaussian pulse generation circuit; 101-a rectangular pulse source; 2-a second gaussian pulse generating circuit.
Detailed Description
In the description of the present invention, if an orientation description such as "upper", "lower", "front", "rear", "left", "right", etc. is referred to, it is merely for convenience of description and simplification of the description, and does not indicate or imply that the apparatus or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the invention. If a feature is referred to as being "disposed," "secured," "connected," or "mounted" on another feature, it can be directly disposed, secured, or connected to the other feature or be indirectly disposed, secured, connected, or mounted on the other feature.
In the description of the invention, if reference is made to "a number", it means more than one; if "a plurality" is referred to, it means more than two; if "greater than", "less than", "exceeding" are referred to, they are understood to not include the present number; references to "above," "below," "within," and "within" are to be construed as including the present number. If reference is made to "first," "second," etc., it is to be understood that the same or similar technical feature names are used only for distinguishing between them, and it is not to be understood that the relative importance of a technical feature is implied or indicated, or that the number of technical features is implied or indicated, or that the precedence of technical features is implied or indicated.
Preferred embodiments of the present invention will be described in further detail below with reference to the attached drawings:
as shown in fig. 1 to 3, the present embodiment provides a SRD-based gaussian monopulse generation circuit, including: the device comprises a first Gaussian pulse generation circuit 1, a second Gaussian pulse generation circuit 2, a microstrip delay line DL1 and a balun device U1, wherein the first Gaussian pulse generation circuit 1 is connected with one end of the microstrip delay line DL1, and the balun device U1 is respectively connected with the other end of the microstrip delay line DL1 and the second Gaussian pulse generation circuit 2; the first gaussian pulse generating circuit 1 comprises a rectangular pulse source 101, a resistor R1, a resistor R2, a step recovery diode SRD1, a step recovery diode SRD2 and an inductor L2, wherein one end of the rectangular pulse source 101 is grounded, the other end of the rectangular pulse source 101 is respectively connected with the cathode of the step recovery diode SRD1 and one end of the resistor R1, the anode of the step recovery diode SRD1 is grounded, the other end of the resistor R1 is connected with a negative voltage power supply through the inductor L2, the cathode of the step recovery diode SRD2 is connected with the cathode of the step recovery diode SRD1, the anode of the step recovery diode SRD2 is grounded through the resistor R2, and the anode of the step recovery diode SRD2 is connected to the microstrip delay line DL1; the first gaussian pulse generating circuit 1 and the second gaussian pulse generating circuit 2 adopt the same circuit structure, wherein the first gaussian pulse generating circuit 1 and the second gaussian pulse generating circuit 2 generate the same gaussian pulse at the same time, after the first gaussian pulse generated by the first gaussian pulse generating circuit 1 passes through the microstrip delay line DL1, a phase difference is generated relative to the second gaussian pulse generated by the second gaussian pulse generating circuit, and the balun device U1 synthesizes the first gaussian pulse after passing through the microstrip delay line DL1 and the second gaussian pulse into a gaussian single pulse. The Balun device is also known as a Balun device.
The working principle of this embodiment is as follows: the inductor L2 and the resistor R1 are used as bias circuits of the step recovery diode SRD1 and the step recovery diode SRD 2; the step recovery diode SRD1 is used as a bias circuit of the step recovery diode SRD2 and a resistor R2; the rectangular pulse source 101 provides a reverse bias to the step recovery diode SRD1 when it is pulsed positive, due to the reverse conducting characteristics of the step recovery diode: when the diode in the conducting state suddenly adds reverse voltage, the instant reverse current reaches the maximum value immediately, and maintains for a certain time, and then immediately returns to zero. During this period, the step recovery diode SRD1 generates a sharp positive pulse, and then this positive pulse enters the step recovery diode SRD2, so that the step recovery diode SRD2 is reversely biased, and the reverse bias current generated by the step recovery diode SRD2 passes through the resistor R2 (i.e. the load), which can generate a gaussian pulse with a ps-level pulse width, that is, a pulse with a pulse width of about 500ps as shown in fig. 3, where ps refers to picoseconds; the step recovery diode SRD1 acts on the pulse waveform to generate a fast rising edge, and the step recovery diode SRD2 mainly acts to control the falling speed of the falling edge of the gaussian pulse by controlling the magnitude of reverse current in cooperation with the resistor R2, so as to regulate the pulse width. Therefore, in this embodiment, the first gaussian pulse and the second gaussian pulse refer to picosecond gaussian pulses, and have narrow pulse width and high power; on the basis, the adjustable control of the pulse width can be further realized.
Preferably, the same parameters are adopted for the corresponding components in the first gaussian pulse generating circuit 1 and the second gaussian pulse generating circuit 2, so as to ensure that the first gaussian pulse generating circuit 1 and the second gaussian pulse generating circuit 2 generate the same gaussian pulse at the same time.
In more detail, since the corresponding wavelength of the high frequency signal is short, the high frequency signal is extremely susceptible to the length of the microstrip delay line to thereby generate a delay in the transmission process to change the phase. As shown in fig. 2, the schematic diagram of the synthesis of the gaussian monopulse is that the length of the microstrip delay line DL1 is adjusted to delay the first gaussian pulse generated by the first gaussian pulse generating circuit 1, and the length of the microstrip delay line DL1 is slowly adjusted to change the phase difference between the two gaussian pulses relative to the phase difference generated by the gaussian pulse generated by the second gaussian pulse generating circuit 2 until an ideal gaussian monopulse waveform is detected after the balun device U1 is synthesized. Because the circuit synthesizes two Gaussian pulses into one Gaussian single pulse, the Gaussian single pulse synthesized and output by the two Gaussian pulses has the characteristics of high power and narrow pulse width.
It should be noted that balun devices have reciprocity, i.e. both double-ended and single-ended may be input terminals. When a single-ended input mode is adopted, a single end is an input end, a double end is an output end, and two signals with 180 degrees of phases and consistent amplitude are output by the double end of an ideal balun device; when a double-end input mode is adopted, the double end is an input end, the single end is an output end, and an ideal balun device firstly turns one of the phases of the double end 180 degrees and then overlaps with the other signal which is not subjected to phase turning, and then realizes output; the double-ended input mode is actually the inverse of the single-ended input mode. In the present embodiment, the principle of the double-ended input method is used. The balun device U1 model described in this embodiment is preferably TCM2-43X+.
Therefore, in this embodiment, the length of the microstrip delay line is adjusted in real time to control the phase difference between the first gaussian pulse and the second gaussian pulse, the length of the real-time adjustment can be set in a self-defined manner according to actual situations and requirements, and the waveform output by the balun device is recorded at the same time until the output waveform meets the preset gaussian single pulse waveform requirement, that is, until the gaussian single pulse waveform as shown in fig. 2 is output in the balun device; the preset requirements of the Gaussian monopulse waveform can also be set and adjusted in a self-defined mode according to actual situations/requirements.
As shown in fig. 1, the first gaussian pulse generating circuit 1 further includes an inductor L1, one end of the inductor L1 is connected to the rectangular pulse source, and the other end of the inductor L1 is connected to the cathode of the step recovery diode SRD1, the resistor R1, and the cathode of the step recovery diode SRD2, respectively. More specifically, the inductance L1 is used to block the gaussian pulse generated by the first gaussian pulse generating circuit 1 from entering the previous stage circuit to cause an influence.
As shown in fig. 1, the first gaussian pulse generating circuit 1 further includes a diode D1 and a resistor R3, the anode of the diode D1 is connected to the anode of the step recovery diode SRD2, the cathode of the diode D1 is grounded through the resistor R3, and the cathode of the diode D1 is connected to the microstrip delay line DL 1. The diode D1 is a schottky diode. More specifically, the diode D1 is used to cancel the negative level and ringing effects of the gaussian pulse generated by the first gaussian pulse generating circuit 1.
As shown in fig. 1, the pulse width time of the gaussian pulse generated by the first gaussian pulse generating circuit 1 is obtained by changing the reverse recovery time of the step recovery diode SRD2To regulate, reverse recovery time of said step recovery diode SRD2 +.>The calculation formula of (2) is: />Wherein->Is the minority carrier lifetime of the step recovery diode SRD2, which minority carrier lifetime +.>Is a specific constant corresponding to the step recovery diode SRD 2; />Is the forward current magnitude of the step recovery diode SRD2, ±>，/>Is the voltage value of the non-grounding end of the resistor R2, R2 is the resistance value of the resistor R2, < >>Is the maximum voltage that can be provided on the negative side of the step recovery diode SRD 2; />Is the reverse current magnitude of the step recovery diode SRD 2.
More specifically, as shown in fig. 1, the inductor L2 and the resistor R1 serve as bias circuits for the step recovery diodes SRD2 and SRD1, and the step recovery diode SRD1 serves as a bias circuit for the step recovery diode SRD2 and the resistor R2. When the rectangular pulse source 101 emits a positive pulse, due to the reverse conduction characteristic of the step recovery diode, when the diode in the on state suddenly adds a reverse voltage, the instantaneous reverse current reaches the maximum value immediately, and is maintained for a certain time, and then immediately returns to zero, so that a gaussian pulse with a ps-level pulse width can be generated within a period of time. Changing the current bias to the step recovery diode SRD2 by changing the voltage of the different negative voltage supply-Vdc and the resistance value of said resistor R2, the different current bias being manifested as the forward current magnitude of the step recovery diode SRD2，/>The magnitude of the reverse current during the reverse conduction of the SRD2 is determined, so that the peak regulation of the gaussian pulse during the reverse conduction of the step recovery diode SRD2 is realized.
As shown in fig. 1, the reverse current magnitude of the step recovery diode SRD2The approximate calculation formula of (a) is:wherein->Is the conduction voltage drop of the diode D1, < >>Is the maximum voltage provided by the negative side of the step recovery diode SRD2, R2 is the resistance of the resistor R2, and R3 is the powerThe resistance value of the resistor R3.
As shown in fig. 1, the maximum voltage provided by the cathode side of the step recovery diode SRD2The calculation formula of (2) is: />Wherein->Is the high level voltage of the rectangular pulse emitted by the rectangular pulse source 101,/or->Is the equivalent resistance of the rectangular pulse source 101, R2 is the resistance value of the resistor R2, and R3 is the resistance value of the resistor R3.
More specifically, it can be seen from the above that changing the resistance value of the resistor R2 will cause the reverse recovery time of the step recovery diode SRD2Variation of->The smaller the resistance value of the step recovery diode SRD2 is, the smaller the time from 0 to infinity is, so that the pulse width of the gaussian pulse generated by the first gaussian pulse generating circuit 1 is also reduced, and the pulse width of the gaussian pulse generated by the first gaussian pulse generating circuit 1 can be regulated by changing the resistance value of the resistor R2, so that a gaussian pulse with a narrow pulse width is generated.
It should be noted that, as shown in fig. 1, the first gaussian pulse generating circuit 1 and the second gaussian pulse generating circuit 2 have the same circuit structure, and the devices of the second gaussian pulse generating circuit 2 corresponding to the parts of the first gaussian pulse generating circuit 1 have the same principle and function, and the calculation modes of the corresponding parameters are also the same.
In summary, the invention realizes a Gaussian single pulse generating circuit based on SRD through an optimally designed circuit, generates Gaussian pulses with narrow pulse width through an SRD step diode circuit, and synthesizes two paths of Gaussian single pulses by a balun device after one path of two identical Gaussian pulse synthesizing circuits generates phase difference through a microstrip delay line, wherein the synthesis of the two paths of Gaussian pulses enables the output Gaussian single pulse to have the characteristic of high power. The circuit has a simpler circuit structure, is low in cost and easy to realize, and can be widely applied to the fields of military radars, ranging, positioning and communication systems.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (6)
1. A SRD-based gaussian monopulse generation circuit, comprising: the device comprises a first Gaussian pulse generation circuit, a second Gaussian pulse generation circuit, a microstrip delay line and a balun device, wherein the first Gaussian pulse generation circuit is connected with one end of the microstrip delay line, and the balun device is respectively connected with the other end of the microstrip delay line and the second Gaussian pulse generation circuit; the first Gaussian pulse generation circuit comprises a rectangular pulse source, a resistor R1, a resistor R2, a step recovery diode SRD1, a step recovery diode SRD2 and an inductor L2, wherein one end of the rectangular pulse source is grounded, the other end of the rectangular pulse source is respectively connected with the negative pole of the step recovery diode SRD1 and one end of the resistor R1, the positive pole of the step recovery diode SRD1 is grounded, the other end of the resistor R1 is connected with a negative voltage power supply through the inductor L2, the negative pole of the step recovery diode SRD2 is connected with the negative pole of the step recovery diode SRD1, the positive pole of the step recovery diode SRD2 is grounded through the resistor R2, and the positive pole of the step recovery diode SRD2 is connected to the microstrip delay line; the first Gaussian pulse generating circuit and the second Gaussian pulse generating circuit adopt the same circuit structure, wherein the first Gaussian pulse generating circuit and the second Gaussian pulse generating circuit generate the same Gaussian pulse at the same time, the first Gaussian pulse generated by the first Gaussian pulse generating circuit generates a phase difference relative to the second Gaussian pulse generated by the second Gaussian pulse circuit after passing through the microstrip delay line, and the balun device synthesizes the first Gaussian pulse and the second Gaussian pulse after passing through the microstrip delay line into a Gaussian single pulse;
the first gaussian pulse generating circuit further comprises an inductor L1, one end of the inductor L1 is connected with the rectangular pulse source, and the other end of the inductor L1 is respectively connected with the cathode of the step recovery diode SRD1, the resistor R1 and the cathode of the step recovery diode SRD 2;
the first Gaussian pulse generation circuit further comprises a diode D1 and a resistor R3, the positive electrode of the diode D1 is connected with the positive electrode of the step recovery diode SRD2, the negative electrode of the diode D1 is grounded through the resistor R3, and the negative electrode of the diode D1 is connected with the microstrip delay line.
2. The SRD based gaussian monopulse generation circuit according to claim 1, wherein said diode D1 is a schottky diode.
3. The SRD based gaussian monopulse generation circuit according to claim 2, characterized in that by varying the reverse recovery time of said step recovery diode SRD2Regulating and controlling the pulse width time of the Gaussian pulse generated by the first Gaussian pulse generation circuit, wherein the reverse recovery time of the step recovery diode SRD2 is +.>The calculation formula of (2) is as follows:wherein->Minority carrier lifetime for the step recovery diode SRD 2; />A forward current magnitude for the step recovery diode SRD 2; />The reverse current magnitude for the step recovery diode SRD 2.
4. The SRD based gaussian monopulse generation circuit of claim 3, wherein the reverse current magnitude of said step recovery diode SRD2The calculation formula of (2) is: />Wherein->Is the conduction voltage drop of the diode D1, < >>Is the maximum voltage that can be provided on the negative side of the step recovery diode SRD2, R2 is the resistance of the resistor R2, and R3 is the resistance of the resistor R3.
5. The SRD based gaussian monopulse generation circuit of claim 4, wherein the maximum voltage provided by the negative side of the step recovery diode SRD2The calculation formula of (2) is as follows: />Wherein->Is the high level voltage of the rectangular pulse emitted by the rectangular pulse source, < >>Is the equivalent resistance of the rectangular pulse source.
6. The SRD-based gaussian monopulse generation circuit of claim 1, wherein the length of the microstrip delay line is adjusted in real time to control the phase difference between the first gaussian pulse and the second gaussian pulse, and the waveform output by the balun device is recorded until the output waveform meets the preset gaussian monopulse waveform requirement.
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| CN101494449A (en) * | 2008-12-19 | 2009-07-29 | 清华大学深圳研究生院 | Excitation type pulse generator |
| CN103227624A (en) * | 2013-04-22 | 2013-07-31 | 李冀 | Second-order differential gaussian pulse generator based on SRD |
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| CN114157319A (en) * | 2021-11-04 | 2022-03-08 | 深圳越为科技有限公司 | Novel ultra-wideband sensing signal receiving and transmitting integrated system |
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| US7869526B2 (en) * | 2005-12-19 | 2011-01-11 | University Of South Florida | System and method for a single stage tunable ultra-wideband pulse generator |
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|---|---|---|---|---|
| CN101494449A (en) * | 2008-12-19 | 2009-07-29 | 清华大学深圳研究生院 | Excitation type pulse generator |
| CN103227624A (en) * | 2013-04-22 | 2013-07-31 | 李冀 | Second-order differential gaussian pulse generator based on SRD |
| CN208316694U (en) * | 2018-06-11 | 2019-01-01 | 南京邮电大学南通研究院有限公司 | A kind of narrow-pulse generation circuit in sequential equivalent system |
| CN114157319A (en) * | 2021-11-04 | 2022-03-08 | 深圳越为科技有限公司 | Novel ultra-wideband sensing signal receiving and transmitting integrated system |
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