CN203661015U - An ultra wide band pulse signal generation apparatus based on a memristor - Google Patents
An ultra wide band pulse signal generation apparatus based on a memristor Download PDFInfo
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- CN203661015U CN203661015U CN201320859706.4U CN201320859706U CN203661015U CN 203661015 U CN203661015 U CN 203661015U CN 201320859706 U CN201320859706 U CN 201320859706U CN 203661015 U CN203661015 U CN 203661015U
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Abstract
The utility model discloses an ultra wide band pulse signal generation apparatus based on a memristor. The ultra wide band pulse signal generation apparatus based on the memristor comprises a memristor control circuit, a square wave oscillation circuit, an ultra wide band pulse-generating circuit and a voltage-multiplying circuit. An input terminal of the square wave oscillation circuit is connected with the memristor control circuit. An input terminal of the voltage-multiplying circuit is connected to a first output terminal of the square wave oscillation circuit. A first input terminal of the pulse-generating circuit is connected to an output terminal of the voltage-multiplying circuit. A second input terminal of the pulse-generating circuit is connected to a second output terminal of the square wave oscillation circuit. The memristor control circuit comprises a triode. The square wave oscillation circuit comprises a TTL gate circuit, the memristor and an emitting electrode amplification circuit. The ultra wide band pulse-generating circuit comprises an inverter, an RC differentiating circuit, a microwave triode amplification circuit and a schottky diode. Ultra wide band pulses generated by the ultra wide band pulse signal generation apparatus based on the memristor of the utility model are advantageous in that the frequency stability is high; the adjustable scope is wide; a pulse voltage amplitude is large, stable and easy to detect; required circuit elements are simple and are low in cost; the circuit is simple in structure; debugging is easy to carry out; etc.
Description
Technical field
The utility model belongs to ULTRA-WIDEBAND RADAR imaging system, belongs to Signals & Systems field., more specifically, relate to a kind of ultra-wideband impulse signal generation device based on memristor.
Background technology
Since 1989 U.S. Department of Defense (DARPA) ultra broadband concept is proposed first, its huge business opportunity representing in commercial communication is impelled FCC (FCC), and in 2002 approvals, it is applied to civilianly, has promulgated the planning of UWB (Ultra Wideband) frequency spectrum and has been defined as to ultra broadband: the absolute bandwidth at-10dB place is greater than 500MHz or relative bandwidth and is greater than 20% signal and can be considered it is ultra-broadband signal.Ultra broadband is different from conventional communication mode, it does not need carrier transmit signal but by directly transmitting and receiving nanosecond or data are transmitted in the nanosecond pulse of subnanosecond level non-sine, therefore has advantages of that traditional communication is matchless: large capacity, two-forty, low-power consumption, antijamming capability are strong etc.The pulsewidth of nanosecond pulse directly affects the comprised spectrum component that transmits, and frequency range has directly determined the penetration performance of radio ultra wide band system, pulse amplitude has determined detection range, and therefore the high amplitude ultra-wideband pulse generation technology of nanosecond or subnanosecond level is very crucial.
From the research to UWB technology both at home and abroad at present, ultra-wideband pulse producing method mainly contains two large classes, the one, utilize the switching characteristic of semiconductor device to realize, this method is to utilize energy-storage travelling wave tube to discharge and recharge to obtain spike signal, more can be met the waveform of requirement through shaping circuit.Another kind is to utilize the logical device characteristic of digital circuit to produce needed pulse.Comparatively speaking, first kind of way implementation is versatile and flexible, and cost is low, and device is few, therefore becomes the major way that ultra-wideband pulse produces.The semiconductor device difference that first kind of way adopts, the nanosecond pulse quality obtaining is not quite similar, in pulsewidth, amplitude, can not show good simultaneously, and great majority need crystal oscillator that square wave, different direct-flow voltage regulation source are provided at input, be unfavorable for integrated, therefore for this phenomenon, the utility model intends proposing a kind of ultra-broadband signal production method based on memristor characteristic.The semiconductor device difference that first kind of way adopts, the ultra broadband nanosecond pulse characteristic obtaining is not quite similar, and is difficult to take into account amplitude and pulsewidth simultaneously, and majority needs square wave excitation at input.Therefore for this phenomenon, the utility model intends proposing a kind of ultra-broadband signal production method based on memristor.
Utility model content
For above defect or the Improvement requirement of prior art, the purpose of this utility model is to provide a kind of can produce that frequency stability is high, adjustable extent is wide, pulse voltage amplitude is large and the ultra-wideband impulse signal generation device based on memristor of the stable ultra-wideband impulse signal easily detecting.
A kind of ultra-wideband impulse signal generation device based on memristor that the utility model provides, comprises memristor control circuit, square-wave oscillator circuit, voltage-multiplying circuit and pulse-generating circuit; The input of square-wave oscillator circuit connects described memristor control circuit, the input of described voltage-multiplying circuit is connected to the first output of described square-wave oscillator circuit, the first input end of described pulse-generating circuit is connected to the output of described voltage-multiplying circuit, the second input of described pulse-generating circuit is connected to the second output of described square-wave oscillator circuit, and the output of described pulse-generating circuit is used for exporting ultra-wideband impulse signal.
Wherein, when work, under the control signal of memristor control circuit, memristor resistance is rule and changes, and to produce an adjustable multi resonant square wave of frequency be late-class circuit provider wave excitation; The switching that when square-wave oscillator circuit has utilized TTL gate circuit bistable state to switch, feedback RC circuit has been discharged and recharged to obtain low and high level two states realizes square-wave signal and occurs; Pulse-generating circuit utilizes the speed-sensitive switch characteristic of microwave triode, in the time that switching, on off state discharges and recharges to obtain spike by RC differential circuit, and form nanosecond spike, make described nanosecond spike reach ultra broadband launch requirements by voltage-multiplying circuit.
Wherein, square-wave oscillator circuit comprises the first not gate G1, the second not gate G2, resistance R, capacitor C 1, memristor M, metal-oxide-semiconductor Q, resistance R e and the 3rd not gate G3; The input of described the second not gate G2 is connected to the output of described the first not gate G1, the anode of described memristor M is connected to the output of described the second not gate G2 by described resistance R, the negative terminal of described memristor M is connected to the grid of described metal-oxide-semiconductor Q, and the negative terminal of described memristor M is also connected to the input of described the second not gate G2 by described capacitor C 1; The drain electrode of described metal-oxide-semiconductor Q meets power supply VCC, and the source electrode of described metal-oxide-semiconductor Q is connected with the input of described the 3rd not gate G3, and the output of described the 3rd not gate G3 is connected to the input of described the first not gate G1; The output of described the 3rd not gate G3 is as the output of described square-wave oscillator circuit; Described resistance R e is connected between the input and ground of described the 3rd not gate G3.
Wherein, the first not gate G1, the second not gate G2 or the 3rd not gate G3 are TTL not gate.
Wherein, pulse-generating circuit comprises: the first inverter G4, first order differential circuit, the second inverter G5, the 3rd inverter G6, adjustable resistance RT, triode T3, second level differential circuit, resistance R 4 and diode D9; The input of the first inverter G4 is as the second input of described pulse-generating circuit, and the input of described the second inverter G5 is connected to the output of described the first inverter G4 by described first order differential circuit; The input of the 3rd inverter G6 is connected to the output of described the second inverter G5, the base stage of triode T3 is connected to the output of described the 3rd inverter G6, the grounded emitter of triode T3, the collector electrode of triode T3 is connected to the negative electrode of diode D9 by described second level differential circuit, the anode of diode D9 is as the output of described pulse-generating circuit; One end of described adjustable resistance RT is connected with described voltage-multiplying circuit as the first input end of described pulse-generating circuit, and the other end of adjustable resistance RT is connected to the collector electrode of triode T3; Described resistance R 4 is connected between the anode and ground of described diode D9.
Wherein, first order differential circuit comprises capacitor C 2 and the resistance R 2 between output and the ground that is connected in series in successively described the first inverter G4, and described capacitor C 2 is connected with the input of described the second inverter G5 with the end that is connected in series of described resistance R 2.
Wherein, second level differential circuit comprises capacitor C 3 and the resistance R 3 between collector electrode and the ground that is connected in series in successively described T3, and described capacitor C 3 is connected with the negative electrode of described diode D9 with the end that is connected in series of described resistance R 3.
Wherein, memristor control circuit comprises triode T1 and triode T2; The emitter of triode T1 is connected with the emitter of triode T2, the equal ground connection of collector electrode of the collector electrode of triode T1 and triode T2, the base stage of the base stage of triode T1 and triode T2 is all for receiving outside control signal, and the link of triode T1 and triode T2 is as the output of described memristor control circuit.
Wherein, voltage-multiplying circuit comprises multiple voltage doubling units that are connected in series; Described voltage doubling unit comprises the first diode, the second diode, the first electric capacity and the second electric capacity; One end of described the first electric capacity is as the input of described voltage-multiplying circuit, and the other end of described the first electric capacity is connected with the negative electrode of described the first diode; The plus earth of described the first diode, the anodic bonding of the second diode is to the negative electrode of described the first diode, and the negative electrode of the second diode is as the output of described voltage-multiplying circuit; Described the second electric capacity is connected between the negative electrode of described the second diode and the anode of described the first diode.
The utility model advantage is mainly reflected in:
(1) change because memristor resistance can be rule, the square wave frequency that therefore square-wave oscillator circuit produces is stablized adjustable;
(2) circuit element used is simple, volume is little, cost is low, voltage-multiplying circuit makes whole device only need a constant pressure source, easy of integration;
(3) pulse that the generation of the nanosecond pulse based on microwave triode circuit produces can take into account pulse amplitude and pulsewidth, has avoided pursuing simply the low amplitude value that burst pulse causes millivolt level.
(4) can be widely used in the transmitting terminal of radio ultra wide band system.
Accompanying drawing explanation
The modular structure theory diagram of the ultra-wideband impulse signal generation device based on memristor that Fig. 1 provides for the utility model;
The physical circuit figure of the ultra-wideband impulse signal generation device based on memristor that Fig. 2 provides for the utility model;
The output waveform schematic diagram of square-wave oscillator circuit in the ultra-wideband impulse signal generation device based on memristor that Fig. 3 provides for the utility model;
Superwide band pulse wave schematic diagram in the ultra-wideband impulse signal generation device based on memristor that Fig. 4 provides for the utility model;
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.In addition,, in each execution mode of described the utility model, involved technical characterictic just can combine mutually as long as do not form each other conflict.
The circuit structure of the ultra-broadband signal generation device based on memristor characteristic that the utility model provides is simple, can integrated level high, low in energy consumption, and output pulse amplitude is high, can be widely used in radio ultra wide band system transmitter; Having solved existing ultra-wideband pulse generation circuit dependence quartz oscillator or signal generator provides, and strengthens ultra-broadband signal disguise and improves ultra-wideband pulse generation device to applying environmental adaptation degree.
Fig. 1 shows the modular structure of a kind of ultra-wideband impulse signal generation device based on memristor that the utility model embodiment provides, and for convenience of explanation, only shows the part relevant to the utility model embodiment, and details are as follows:
Ultra-wideband impulse signal generation device based on memristor comprises that memristor control circuit 1, square-wave oscillator circuit 2, voltage-multiplying circuit 3 and ultra-wideband pulse produce circuit 4; Memristor control circuit 1 is controlled memristor change in resistance rule by control signal, produces the square wave of different repetition rates according to memristor change in resistance square-wave oscillator circuit; The square wave that square-wave oscillator circuit 2 produces produces circuit 4 to ultra-wideband pulse and voltage-multiplying circuit 3 provides input stimulus; The microwave triode that voltage-multiplying circuit 3 is exported in ultra-wideband pulse generation circuit provides direct current biasing, guarantees that microwave triode can be operated on off state; Ultra-wideband pulse produces circuit can produce amplitude-4V, the ultra broadband negative polarity Gaussian pulse of pulsewidth 1ns.Further, square-wave oscillator circuit based on memristor comprises that first order TTL not gate G1 output directly connects second level TTL not gate G2 input, the resistance of the output of second level TTL not gate G2 by series connection and memristor and capacitor C 1 form feedback loop the output of second level TTL not gate G2 are fed back to its input, the positive terminating resistor of memristor, negative terminal connects respectively electric capacity and emitter amplifier MOSFET grid, Design enlargement device is delivered to third level TTL not gate G3 input in the output of source electrode, and third level TTL not gate G3 output feeds back to the input of first order not gate G1.The square-wave signal that whole square-wave oscillator circuit produces is from the non-gate output terminal output of the 3rd utmost point TTL, for ultra-wideband pulse produces circuit and voltage-multiplying circuit provides excitation.
Emitter-base bandgap grading amplifying circuit adopts MOSFET pipe, and its drain electrode directly meets reverse bias voltage VCC, and grid connects the negative pole of memristor, and source electrode is by resistance R e ground connection, and drain electrode output connects third level TTL not gate G3 input.Emitter-base bandgap grading amplifying circuit cannot normally be opened with solving the too high third level TTL not gate G3 that causes of memristor resistance.
Memristor control circuit comprises NPN type triode and positive-negative-positive triode, NPN type transistor collector connects positive reversed bias voltage, emitter connects the emitter of positive-negative-positive triode, the collector electrode of positive-negative-positive triode connects negative bias voltage, NPN type transistor emitter is connected the anode of memristor with the phase contact of the emitter of positive-negative-positive triode, memristor is born termination capacitor.Change memristor resistance and Changing Pattern thereof by control signal is set, thereby make the square-wave oscillator circuit based on memristor can produce the adjustable square wave of frequency, subsequent conditioning circuit provides excitation.
The top electrode of memristor is pricked top electrode probe, and the bottom electrode of memristor is pricked bottom electrode probe, and upper/lower electrode probe is respectively as anode and the negative terminal of memristor.Memristor resistance under the effect of memristor control circuit has memory function, can be rule and change, and changes thereby the square wave frequency that square wave circuit for generating is produced also can be rule.
Ultra-wideband pulse produces circuit, the square wave that square-wave oscillator circuit produces by after inverter G4 through first order RC differential circuit, RC differential circuit is cut narrow rear inverter G5, G6 by two-stage cascade by square wave and is formed a square wave that pulsewidth is very narrow, be input to the base stage of microwave triode, the direct ground connection of microwave triode emitter, the collector bias voltage of microwave triode is provided by voltage-multiplying circuit output.The collector electrode of microwave triode is exported by continuing to cut narrow pulsewidth shape after the RC differential circuit of the second level, Schottky diode of node place Opposite direction connection of electric capacity and resistance, the positive input of diode is by low resistance grounding, and ultra-wideband impulse signal is exported by the positive input of diode.
Voltage-multiplying circuit is made up of according to Fig. 2 module 3 circuit arrangement diode and the electric capacity of 8 same model, and its multiplication of voltage principle is: in the time that input square wave is low level, and loop no-output; When input square wave is high level U
htime, this level forms a loop by C4, D2, C5, D1, and D1, D2 are ideal diode, C4, C5 each self-charging of connecting
in the time that input square wave high level disappears, C4, C5 start electric discharge, and according to the known C4 of diode orientation, C5 course of discharge, the input voltage of C6 is C4, C5 discharge voltage sum, is to the maximum
like this in C4, C5 charge and discharge process C6 input to be similar to low level be zero, high level is
square wave; 4 such loops in parallel, in the end D8 input obtains
due to U
hfor 5V, therefore only need 4 such loops just can make final output voltage reach the constant voltage of approximate 20V, be enough to guarantee that microwave triode always works on off state.
The square wave excitation that voltage-multiplying circuit can produce square wave circuit for generating is similar to and converts constant pressure source to, provides DC offset voltage to microwave triode, guarantees that microwave triode can normally be operated on off state.Voltage-multiplying circuit makes whole Circuits System only need the constant pressure source of a 5V, can reduce circuit cost.
The beneficial effects of the utility model are: according to memristor characteristic, the control signal of inputting by memristor control circuit, the resistance of memristor will be rule and change, thereby change the time constant that discharges and recharges feedback loop being formed by memristor, resistance and electric capacity, and then reach the object of automatic change square-wave oscillator frequency; The voltage that the square wave producing is exported an approximate constant voltage after by voltage-multiplying circuit provides bias voltage can be operated on off state to microwave triode.The square wave producing is inputted the square wave of pulsewidth 20ns in microwave triode base stage by RC differential circuit and two-stage inverter, when microwave triode is in the time that speed-sensitive switch switches, square-wave signal is again by forming burst pulse after the RC differential circuit of the microwave triode collector electrode second level, by the Schottky diode of Opposite direction connection, burst pulse shaping is formed to the spike of the about 1ns of pulsewidth, the ultra-wideband pulse that instant the utility model will produce.
The utility model advantage is mainly reflected in:
(1) change because memristor resistance can be rule, the square wave frequency that therefore square-wave oscillator circuit produces is stablized adjustable;
(2) circuit element used is simple, volume is little, cost is low, voltage-multiplying circuit makes whole device only need a constant pressure source, easy of integration;
(3) pulse that the generation of the nanosecond pulse based on microwave triode circuit produces can take into account pulse amplitude and pulsewidth, has avoided pursuing simply the low amplitude value that burst pulse causes millivolt level.
(4) can be widely used in the transmitting terminal of radio ultra wide band system.
Below in conjunction with accompanying drawing, the feature and advantage of the utility model ultra-broadband signal production method are described in more detail.
Refer to Fig. 1, for a kind of ultra-broadband signal based on memristor of the utility model produces the electric circuit constitute block diagram, the utility model comprises that memristor control circuit 1, square-wave oscillator circuit 2, voltage-multiplying circuit 3 and ultra-wideband pulse produce circuit 4.Consult Fig. 2, described square-wave oscillator circuit, it is characterized in that, first order TTL not gate G1 output directly connects second level TTL not gate G2 input, the resistance R of the output of second level TTL not gate G2 by series connection and memristor M and capacitor C 1 form feedback circuit the output of second level TTL not gate G2 are fed back to its input, the positive terminating resistor of memristor, negative terminal connects respectively the grid of electric capacity and emitter amplifier MOSFET, Design enlargement device MOSFET connects third level TTL not gate G3 input in the output of source electrode, and third level TTL not gate G3 output feeds back to the input of first order not circuit.The square-wave signal of whole square-wave oscillator circuit output is exported from the 3rd utmost point TTL not gate G3 output.
Emitter-base bandgap grading amplifying circuit adopts MOSFET pipe, and its drain electrode directly meets reverse bias voltage VCC, and grid connects the negative pole of memristor, and source electrode is by resistance R e ground connection, and drain electrode output connects the 3rd utmost point TTL not gate G3 input.
Memristor control circuit comprises NPN type triode and positive-negative-positive triode, NPN type transistor collector connects positive reversed bias voltage, emitter connects the emitter of positive-negative-positive triode, the collector electrode of positive-negative-positive triode connects negative bias voltage, NPN type transistor emitter is connected the anode of memristor with the phase contact of the emitter of positive-negative-positive triode, memristor is born termination capacitor.
Ultra-wideband pulse produces circuit, the square wave that square-wave oscillator circuit produces by after inverter through first order RC differential circuit, the base stage of cutting waveform after narrow and be input to by the inverter of two-stage cascade microwave triode through RC differential circuit, the direct ground connection of microwave triode emitter, the collector bias voltage of microwave triode is provided by voltage-multiplying circuit output, the collector electrode of microwave triode is exported by continuing to cut narrow pulsewidth shape after the RC differential circuit of the second level, a Schottky diode is oppositely placed at the contact place of electric capacity and resistance, the anode of diode passes through low resistance grounding, ultra-wideband impulse signal is exported by the anode of diode.The square wave that square-wave oscillator circuit produces by after COMS inverter through RC differential circuit, RC differential circuit is cut waveform after narrow and is input to by the CMOS inverter of two-stage cascade the base stage of microwave triode, the direct ground connection of microwave triode emitter, the collector bias voltage of microwave triode is provided by voltage-multiplying circuit output, the collector electrode of microwave triode is exported by continuing to cut narrow pulsewidth after the RC differential circuit of the second level, the contact place Opposite direction connection Schottky diode of electric capacity and resistance, low resistance grounding is passed through in the output of diode, ultra-wideband impulse signal is drawn by the output of diode.
Voltage-multiplying circuit is made up of diode and the electric capacity of 8 same model, each four capacitance interval are arranged up and down, C4, C6, C8, C10 series connection above, C5, C7, C9, C11 series connection below, C4 is connected by oppositely placing diode with C5, in like manner between C5 and C6, C6 and C7, C7 and C8, C8 and C9, C9 and C10, C10 and C11, be also connected like this diode, diode D1 positive input ground connection, C10 output is placed diode with C11 outlet chamber forward.Suppose that power supply rigidly connects the output signal u of square-wave oscillator circuit while leading to
o1for high level, establish TTL inverter G1, G2 input terminal voltage is u
1, u
2, G2 output end voltage is u
3, G3 input voltage u
4, because its both end voltage of not yet charging of C1 is now zero, u
2, u
4for low level, circuit is in the first temporary stable state.Along with u
3high level charges to C1 by resistance R and memristor M, u
4raise gradually, until while exceeding the threshold voltage vt h of inverter, G3 upset, u
o1=u
1become low level, G1 is also overturn, u
2become high level, because capacitor C 1 voltage can not suddenly change, u
4also have a positive transition, keeping G3 output level is low level, and now circuit is in the second temporary stable state.Along with u
2high level is the reverse charging to C1 through R, M, u
4be reduced to gradually while being less than threshold voltage, G3 overturns again, and circuit is got back to again the first temporary stable state.So circulation has just produced the square wave of continuous oscillation.The work wave of circuit each point as shown in Figure 3.With the t in Fig. 3
fillas start time, utilize three parametric methods, can obtain the time that discharges and recharges and be:
In like manner, can try to achieve discharge time is:
Bring TTL gate circuit representative value U into
h=3V, U
l=0.3V, U
th=1.4V, the cycle of square-wave oscillator is:
T=t
fill+ t
put=1.9 (M+R) C
f＝1/T＝/1.9(M+R)C
In the time that memristor resistance M changes according to the control signal of memristor control circuit, the cycle of square-wave oscillator and output frequency also change accordingly.Because the input load resistance M+R of G3 inverter is very large in the time that memristor reaches maximum value, therefore between memristor negative terminal and G3 inverter, add an emitter-base bandgap grading amplifying circuit, the value maximum of resistance R+M can reach 20M Ω like this, reduces its input resistance square-wave oscillator can normally be worked under the constant condition of G3 input voltage.
The square wave input that square-wave oscillator produces produces the positive input of first order inverter of circuit to nanosecond pulse, this inverter can isolate front late-class circuit influence each other the while can correction waveform.Square wave is through R
2, C
2composition the first order differential circuit time discharge and recharge, form a spike, establishing pulsewidth is t
1analyzed from circuit condition:
U(∞)＝0V，U(0)＝5V，
This spike is by the inverter constant square wave of forming frequency again of two-stage cascade, and pulsewidth is t
1, get R according to above-mentioned formula
2be 140 Ω, according to can be calculated C
2the square wave that can be 20ns in microwave triode base stage input pulsewidth during for 200pF.The base stage that this square wave is added to microwave triode, microwave triode is operated on off state, improves pulse amplitude on the one hand, because the switching characteristic of microwave triode is run well than conventional switch, is conducive to improve the rise and fall edge of pulse on the other hand.Again through second level differential circuit, the spike that to produce pulsewidth be 1ns, its account form is the same with above formula, can obtain equally R in the time of output pulse width 1ns
3be 680 Ω, C
3for 2pF.This spike forms the ultra-wideband pulse that pulsewidth is less than about 1ns after by high speed Schottky diode 1N5711 and launches as shown in Figure 4 and by ultra wide band dipolar antenna.
Because microwave triode collector electrode reverse bias voltage is different from the driving voltage of TTL not circuit, inverter, for fear of increasing a large direct-flow voltage regulation source, allow square-wave oscillator circuit pass through a voltage-multiplying circuit, can obtain the voltage of an intimate direct-flow voltage regulation source.
Get other parts of memristor sample and circuit and be connected, wherein the initial resistance M of memristor is 1k Ω, R
1for 1k Ω, capacitor C
1during for 22pF, the output frequency that calculates this square-wave oscillator according to formula is 1MHz, has verified this result with oscilloscope measurement.Thereby the direction that control signal control memristor resistance increases and the increase of speed controlling party wave oscillator frequency or the trend reducing and the speed of increase and decrease.
Observe this use novel by oscilloscope, this circuit can be measured by oscilloscope and the negative spike of a pulsewidth about 1 nanosecond can be produced, can reach-4V of pulse amplitude, the square wave repetition rate that the repetition rate of pulse produces with the square-wave oscillator circuit based on memristor is consistent.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.
Claims (9)
1. the ultra-wideband impulse signal generation device based on memristor, is characterized in that, comprises memristor control circuit (1), square-wave oscillator circuit (2), voltage-multiplying circuit (3) and pulse-generating circuit (4);
The input of described square-wave oscillator circuit (2) connects described memristor control circuit (1), the input of described voltage-multiplying circuit (3) is connected to the first output of described square-wave oscillator circuit (2), the first input end of described pulse-generating circuit (4) is connected to the output of described voltage-multiplying circuit (3), the second input of described pulse-generating circuit (4) is connected to the second output of described square-wave oscillator circuit (2), and the output of described pulse-generating circuit (4) is used for exporting ultra-wideband impulse signal.
2. ultra-wideband impulse signal generation device as claimed in claim 1, it is characterized in that, when work, under the control signal of memristor control circuit, memristor resistance is rule and changes, and to produce an adjustable multi resonant square wave of frequency be late-class circuit provider wave excitation; The switching that when square-wave oscillator circuit has utilized TTL gate circuit bistable state to switch, feedback RC circuit has been discharged and recharged to obtain low and high level two states realizes square-wave signal and occurs; Pulse-generating circuit utilizes the speed-sensitive switch characteristic of microwave triode, in the time that switching, on off state discharges and recharges to obtain spike by RC differential circuit, and form nanosecond spike, make described nanosecond spike reach ultra broadband launch requirements by voltage-multiplying circuit.
3. ultra-wideband impulse signal generation device as claimed in claim 1, it is characterized in that, described square-wave oscillator circuit (2) comprises the first not gate G1, the second not gate G2, resistance R, capacitor C 1, memristor M, metal-oxide-semiconductor Q, resistance R e and the 3rd not gate G3;
The input of described the second not gate G2 is connected to the output of described the first not gate G1, the anode of described memristor M is connected to the output of described the second not gate G2 by described resistance R, the negative terminal of described memristor M is connected to the grid of described metal-oxide-semiconductor Q, and the negative terminal of described memristor M is also connected to the input of described the second not gate G2 by described capacitor C 1;
The drain electrode of described metal-oxide-semiconductor Q meets power supply VCC, and the source electrode of described metal-oxide-semiconductor Q is connected with the input of described the 3rd not gate G3, and the output of described the 3rd not gate G3 is connected to the input of described the first not gate G1; The output of described the 3rd not gate G3 is as the output of described square-wave oscillator circuit (2);
Described resistance R e is connected between the input and ground of described the 3rd not gate G3.
4. ultra-wideband impulse signal generation device as claimed in claim 3, is characterized in that, described the first not gate G1, the second not gate G2 or the 3rd not gate G3 are TTL not gate.
5. ultra-wideband impulse signal generation device as claimed in claim 1, it is characterized in that, described pulse-generating circuit (4) comprising: the first inverter G4, first order differential circuit (41), the second inverter G5, the 3rd inverter G6, adjustable resistance RT, triode T3, second level differential circuit (42), resistance R 4 and diode D9;
The input of the first inverter G4 is as the second input of described pulse-generating circuit (4), and the input of described the second inverter G5 is connected to the output of described the first inverter G4 by described first order differential circuit (41);
The input of the 3rd inverter G6 is connected to the output of described the second inverter G5, the base stage of triode T3 is connected to the output of described the 3rd inverter G6, the grounded emitter of triode T3, the collector electrode of triode T3 is connected to the negative electrode of diode D9 by described second level differential circuit (42), the anode of diode D9 is as the output of described pulse-generating circuit (4);
One end of described adjustable resistance RT is connected with described voltage-multiplying circuit (3) as the first input end of described pulse-generating circuit (4), and the other end of adjustable resistance RT is connected to the collector electrode of triode T3;
Described resistance R 4 is connected between the anode and ground of described diode D9.
6. ultra-wideband impulse signal generation device as claimed in claim 5, it is characterized in that, described first order differential circuit (41) comprises capacitor C 2 and the resistance R 2 between output and the ground that is connected in series in successively described the first inverter G4, and described capacitor C 2 is connected with the input of described the second inverter G5 with the end that is connected in series of described resistance R 2.
7. ultra-wideband impulse signal generation device as claimed in claim 5, it is characterized in that, described second level differential circuit (42) comprises capacitor C 3 and the resistance R 3 between collector electrode and the ground that is connected in series in successively described T3, and described capacitor C 3 is connected with the negative electrode of described diode D9 with the end that is connected in series of described resistance R 3.
8. ultra-wideband impulse signal generation device as claimed in claim 1, is characterized in that, described memristor control circuit (1) comprises triode T1 and triode T2; The emitter of triode T1 is connected with the emitter of triode T2, the equal ground connection of collector electrode of the collector electrode of triode T1 and triode T2, the base stage of the base stage of triode T1 and triode T2 is all for receiving outside control signal, and the link of triode T1 and triode T2 is as the output of described memristor control circuit (1).
9. ultra-wideband impulse signal generation device as claimed in claim 1, is characterized in that, described voltage-multiplying circuit (3) comprising: multiple voltage doubling units that are connected in series (30); Described voltage doubling unit (30) comprises the first diode, the second diode, the first electric capacity and the second electric capacity;
One end of described the first electric capacity is as the input of described voltage-multiplying circuit (3), and the other end of described the first electric capacity is connected with the negative electrode of described the first diode;
The plus earth of described the first diode, the anodic bonding of the second diode is to the negative electrode of described the first diode, and the negative electrode of the second diode is as the output of described voltage-multiplying circuit (3);
Described the second electric capacity is connected between the negative electrode of described the second diode and the anode of described the first diode.
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| CN201320859706.4U CN203661015U (en) | 2013-12-24 | 2013-12-24 | An ultra wide band pulse signal generation apparatus based on a memristor |
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| CN201320859706.4U CN203661015U (en) | 2013-12-24 | 2013-12-24 | An ultra wide band pulse signal generation apparatus based on a memristor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103731123A (en) * | 2013-12-24 | 2014-04-16 | 华中科技大学 | Ultra-wide-band pulse signal generation device based on memristor |
| CN105763175A (en) * | 2016-01-29 | 2016-07-13 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Ultra wide band pulse generation circuit |
| CN106301284A (en) * | 2016-07-21 | 2017-01-04 | 华中科技大学 | A kind of adjustable filter circuit of bandwidth based on memristor and operational approach thereof |
| CN106961262A (en) * | 2017-05-11 | 2017-07-18 | 湖北文理学院 | A kind of delay bistable circuit based on memristor |
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2013
- 2013-12-24 CN CN201320859706.4U patent/CN203661015U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103731123A (en) * | 2013-12-24 | 2014-04-16 | 华中科技大学 | Ultra-wide-band pulse signal generation device based on memristor |
| CN103731123B (en) * | 2013-12-24 | 2016-05-25 | 华中科技大学 | A kind of ultra-wideband impulse signal generation device based on memristor |
| CN105763175A (en) * | 2016-01-29 | 2016-07-13 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Ultra wide band pulse generation circuit |
| CN106301284A (en) * | 2016-07-21 | 2017-01-04 | 华中科技大学 | A kind of adjustable filter circuit of bandwidth based on memristor and operational approach thereof |
| CN106301284B (en) * | 2016-07-21 | 2018-07-13 | 华中科技大学 | A kind of adjustable filter circuit of bandwidth based on memristor and its operating method |
| CN106961262A (en) * | 2017-05-11 | 2017-07-18 | 湖北文理学院 | A kind of delay bistable circuit based on memristor |
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