CN105763175A - Ultra wide band pulse generation circuit - Google Patents
Ultra wide band pulse generation circuit Download PDFInfo
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- CN105763175A CN105763175A CN201610069855.9A CN201610069855A CN105763175A CN 105763175 A CN105763175 A CN 105763175A CN 201610069855 A CN201610069855 A CN 201610069855A CN 105763175 A CN105763175 A CN 105763175A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/156—Arrangements in which a continuous pulse train is transformed into a train having a desired pattern
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Abstract
The present invention relates to an ultra wide band pulse generation circuit. The ultra wide band pulse generation circuit comprises a differentiating circuit, a speed-sensitive switch circuit, a pulse generation circuit and a voltage bias circuit. The differentiating circuit, the speed-sensitive switch circuit and the pulse generation circuit are connected in order, and the voltage bias circuit is connected with the speed-sensitive switch circuit and the pulse generation circuit; the differentiating circuit is configured to receive digital square signals inputted from the outside and convert the digital square signals to sharp pulse signals with a nanosecond-grade width; the speed-sensitive switch circuit is converted to an avalanche conduction state from a critical avalanche state by the driving of the sharp pulse signals; and the pulse generation circuit is configured to generate negative pulses when the speed-sensitive switch circuit is conducted and generate positive pulse when the pulse generation circuit is discharging, and ultra wide band pulse signals are generated according to the negative pulse and the positive pulse. The pulse signals generated by the scheme provided by the invention do not include direct current components and is suitable for antenna emission, and the ultra wide band pulse generation circuit does not need extra pulse shaping circuit so as to reduce the complexity and the cost of the circuit.
Description
Technical field
The present invention relates to wireless communication technology field, the ultra-wideband pulse particularly relating to a kind of Gaussian type produces circuit.
Background technology
Super-broadband tech is a kind of novel wireless communication technology, it passes through the pulse signal carrier as transmission information of frequency band extremely wide (up to several GHzs) and width extremely narrow (subnanosecond level or nanosecond), there is the plurality of advantages such as transfer rate height, the intercepting and capturing strong, low of anti-multipath jamming ability and low cost, be widely used in short distance high-speed radiocommunication, radar detection and the numerous areas such as be accurately positioned.In ultra-wideband communication system, pulse generator is not only the core component of transmitter, is also the important composition unit of receiver, and what the parameter of the pulse signal of generation directly affected system is can index.Therefore, ultra-wideband pulse generator is always up one of important directions of super-broadband tech research.
Definition according to FCC (FCC), ultra-broadband signal refers to locates absolute bandwidth more than 500MHz or relative bandwidth is more than 20% and mid frequency is more than 500MHz signal at-10dB.Ultra-broadband signal is persistent period extremely short pulse at time domain representation, generally only hundreds of psec or hundreds of nanosecond.Ultra-wideband pulse is often produced by the semiconductor device and transmission line with speed-sensitive switch characteristic.The device being usually used in producing ultra-wideband pulse has tunnel diode, step-recovery diode, avalanche transistor and photoconductive switch etc., wherein, pulse rise time produced by tunnel diode and step-recovery diode arrives hundreds of psec up to tens, but its amplitude is only small, only tens arrive hundreds of millivolt.The pulse of more than kilovolt can be produced based on the photoconductive switch of gap, but the pulse recurrence frequency produced is too low, and when working, need the supply voltage that hundreds to thousands lies prostrate, bulky, it is unfavorable for the designing requirement of miniaturization.Adopt nonlinear transmission line also can produce the ultra-narrow pulse signal of picosecond magnitude, but it is significantly high to technological requirement, cost intensive, limits its use scope.Avalanche transistor can produce the pulse of nanosecond, can trigger frequency height, and amplitude is up to tens volts, and circuit realiration is simple, can meet the technology requirement of general receive-transmit system, comparatively practical, is therefore often used in the design of ultra-wideband pulse generator.But, the existing pulse-generating circuit based on avalanche transistor requires that supply voltage is higher, it is unfavorable for miniaturization and the Mobile portable of equipment, and, the general pulse-generating circuit based on avalanche transistor can only directly produce Gaussian pulse, and Gaussian pulse contains DC component and more low frequency component, be not suitable for antenna to launch, so also needing to add extra pulse shaper the Gaussian pulse of generation is carried out differential and filtering, to obtain being suitable for high-order Gaussian pulse or other waveforms that antenna is launched, and traditional pulse-generating circuit power is less, the pulse amplitude produced is relatively low, generally require and add extra broadband amplifier, these complexities all adding circuit and cost.
In sum, existing ultra-wideband pulse produces circuit and has supply voltage requirement is high, impulse waveform and be not suitable for that antenna is launched, pulse amplitude is low and complexity and the defect such as relatively costly.
Summary of the invention
Based on this, it is necessary to the pulse signal produced for existing pulse-generating circuit is not suitable for the transmitting of electric wire and the complexity of circuit and relatively costly technical problem, it is provided that a kind of ultra-wideband pulse produces circuit.
A kind of ultra-wideband pulse produces circuit, including: peaker, high-speed switching circuit, pulse-generating circuit and voltage offset electric circuit；
Described peaker, high-speed switching circuit and pulse-generating circuit are sequentially connected with, and described voltage offset electric circuit is connected with described high-speed switching circuit and pulse-generating circuit respectively；
Described peaker receives the digital square-wave of externally input, and described digital square-wave is converted to the spike signal that width is nanosecond；
Described high-speed switching circuit receives the voltage that described HVB high voltage bias circuit provides, and is in critical avalanche condition；And transferred to snowslide conducting state by critical avalanche condition under the driving of described spike signal；
Described pulse-generating circuit produces negative-going pulse when described high-speed switching circuit turns on, and produces direct impulse when described pulse-generating circuit discharges, and produces ultra-wideband impulse signal according to described negative-going pulse and direct impulse.
Above-mentioned ultra-wideband pulse produces circuit, by peaker, the digital square-wave of externally input being converted to width is nano level spike signal, high-speed switching circuit is transferred to snowslide conducting state by critical avalanche condition under the driving of described spike signal, described pulse-generating circuit, according to the negative-going pulse produced when described high-speed switching circuit turns on and direct impulse, directly produces ultra-wideband impulse signal.The pulse signal produced by technique scheme, without DC component, is more suitable for the transmitting of antenna；Furthermore, being different from traditional pulse-generating circuit needs applying pulse shaping circuit, and the ultra-wideband pulse of the application produces circuit can directly produce ultra-wideband impulse signal, reduces complexity and the cost of circuit.
Accompanying drawing explanation
Fig. 1 is the structural representation of the ultra-wideband pulse generation circuit of one embodiment of the present of invention；
Fig. 2 is the circuit theory diagrams of the ultra-wideband pulse generation circuit of an alternative embodiment of the invention；
Fig. 3 is the oscillogram that the ultra-wideband pulse to an alternative embodiment of the invention produces that the pulse signal of the generation of circuit emulates；
Fig. 4 is the oscillogram that the ultra-wideband pulse to an alternative embodiment of the invention produces that the pulse signal of the generation of circuit is surveyed.
Detailed description of the invention
In order to further set forth the effect of technological means that the present invention takes and acquirement, below in conjunction with accompanying drawing and preferred embodiment, to technical scheme, carry out clear and complete description.
As it is shown in figure 1, the ultra-wideband pulse that Fig. 1 is one embodiment of the present of invention produces the structural representation of circuit, including: peaker 101, high-speed switching circuit 102, pulse-generating circuit 103 and voltage offset electric circuit 104；
Described peaker 101, high-speed switching circuit 102 and pulse-generating circuit 103 are sequentially connected with, and described voltage offset electric circuit 104 is connected with described high-speed switching circuit 102 and pulse-generating circuit 103 respectively；
Described peaker 101, for receiving the digital square-wave of externally input, and is converted to the spike signal that width is nanosecond by described digital square-wave；
Described high-speed switching circuit 102, for receiving the voltage that described HVB high voltage bias circuit 104 provides, and is in critical avalanche condition；And transferred to snowslide conducting state by critical avalanche condition under the driving of described spike signal；
Described pulse-generating circuit 103, for producing negative-going pulse when described high-speed switching circuit 103 turns on, and produces direct impulse, produces ultra-wideband impulse signal according to described negative-going pulse and direct impulse when described pulse-generating circuit discharges.
Above-mentioned ultra-wideband pulse produces circuit, by peaker, the digital square-wave of externally input being converted to width is nano level spike signal, high-speed switching circuit is transferred to snowslide conducting state by critical avalanche condition under the driving of described spike signal, described pulse-generating circuit, according to the negative-going pulse produced when described high-speed switching circuit turns on and direct impulse, directly produces ultra-wideband impulse signal.The pulse signal produced by technique scheme, without DC component, is more suitable for the transmitting of antenna；Furthermore, being different from traditional pulse-generating circuit needs applying pulse shaping circuit, and the ultra-wideband pulse of the application produces circuit can directly produce ultra-wideband impulse signal, reduces complexity and the cost of circuit.
Wherein in an embodiment, the ultra-wideband pulse of the present invention produces circuit, and described peaker 101 includes: a RC peaker and the 2nd RC peaker；
The outfan of a described RC peaker and the 2nd RC peaker is connected with described high-speed switching circuit 102 respectively.
Wherein in an embodiment, the ultra-wideband pulse of the present invention produces circuit, and the first digital square-wave of input is converted to the first spike signal by a described RC peaker, and transmits to high-speed switching circuit 102；
Second digital square-wave of input is converted to the second spike signal by described 2nd RC peaker, and transmits to high-speed switching circuit 102.
In the above-described embodiments, it is nano level spike signal that the digital square-wave of externally input is converted to width by the peaker of the ultra-wideband pulse generation circuit of the present invention, and the high-speed switching circuit 102 for next stage provides triggering signal.In actual applications, the width of spike signal is determined by timeconstantτ=R × C, and the width of spike signal determines the ON time of high-speed switching circuit 102, generally takes 1ns.
Wherein in an embodiment, the ultra-wideband pulse of the present invention produces circuit, and described high-speed switching circuit 102 includes: the first avalanche transistor and the second avalanche transistor；
Described first avalanche transistor and the second avalanche transistor are connected with described pulse-generating circuit respectively.
Wherein in an embodiment, the ultra-wideband pulse of the present invention produces circuit, and described first avalanche transistor receives described first spike signal, and is transferred to snowslide conducting state by critical avalanche condition under the driving of described first spike signal；
Described second avalanche transistor receives described second spike signal, and is transferred to snowslide conducting state by critical avalanche condition under the driving of described first spike signal.
In the above-described embodiments, the ultra-wideband pulse of the present invention produces the high-speed switching circuit 102 of circuit and is composed in parallel by the first avalanche transistor and the second avalanche transistor, when not having digital signal to input, the two avalanche transistor is in cut-off state, they are snowslide conducting under the driving of the spike signal of peaker generation, thus promoting the pulse-generating circuit 103 of next stage to produce ultra-wideband impulse signal.
In the above-described embodiments, by adopting the mode of two avalanche transistors parallel connections, when snowslide is turned on, the circuit of the single audion of current ratio flowing through load resistance doubles, so that the pulse amplitude produced doubles, improve the power of output pulse, it is not necessary to additional broadband amplifier, reduce complexity and the cost of circuit.
Wherein in an embodiment, the ultra-wideband pulse of the present invention produces circuit, and described pulse-generating circuit 103 includes: the first storage capacitor, the second storage capacitor, energy storage inductor and load resistance；
Described first storage capacitor is connected with the colelctor electrode of described first avalanche transistor, and described second storage capacitor is connected with the colelctor electrode of described second avalanche transistor；Described energy storage inductor is connected in parallel on the two ends of described load resistance；
When described first avalanche transistor and described second avalanche transistor are simultaneously in conducting state, described first storage capacitor constitutes the first discharge loop with described first avalanche transistor and described load resistance, produce the first discharge current, described second storage capacitor constitutes the second discharge loop with described second avalanche transistor and described load resistance, produces the second discharge current；
Described first discharge current and the second discharge current are carried on described load resistance simultaneously, and form negative-going pulse.
Wherein in an embodiment, the ultra-wideband pulse of the present invention produces circuit, and described pulse-generating circuit is additionally operable to；
When the quantity of electric charge of described first storage capacitor and the second storage capacitor reduces, described first discharge current and the second discharge current start to reduce, described energy storage inductor starts described load resistance is discharged, make the electric current by described load resistance reverse, and on described load resistance, form direct impulse.
Under the effect of above-mentioned negative-going pulse and direct impulse, the outfan of described pulse-generating circuit forms ultra-wideband impulse signal.The approximate first differential gaussian signal of ultra-wideband impulse signal owing to producing, can be called first differential Gauss ultra-wideband impulse signal by produced ultra-wideband impulse signal.
In the above-described embodiments, the ultra-wideband pulse of the present invention produces the load resistance two ends parallel connection energy storage inductor of the pulse-generating circuit in circuit, utilize the energy storage effect of energy storage inductor, direct disposable generation first differential Gauss ultra-wideband impulse signal, do not need additional peaker and filter circuit, decrease complexity and the cost of circuit；Additionally, the ultra-wideband pulse of the present invention produces the pulse-generating circuit in circuit and adopts double pipe structure design, the Amplitude Ratio single tube structure making the pulse signal of output is bigger, up to 4.3V, improve signal power, transmitting power requirement be need not can meet by additional broadband amplifier, complexity and the cost of circuit decreased.
Wherein in an embodiment, the ultra-wideband pulse of the present invention produces circuit, and described voltage offset electric circuit 104 includes: the first biasing circuit and the second biasing circuit；
Described first biasing circuit includes the first DC source, the first inductance and the first resistance, and is connected with the colelctor electrode of described first avalanche transistor；
Described second biasing circuit includes the second DC source, the second inductance and the second resistance, and is connected with the colelctor electrode of described second avalanche transistor.
Wherein in an embodiment, the ultra-wideband pulse of the present invention produces circuit, and when not having digital signal to input, described first storage capacitor is charged by described first DC source by the first voltage offset electric circuit；Described second storage capacitor is charged by described second DC source by described second biasing circuit.
In the above-described embodiments, when circuit is in static state, described first avalanche transistor and the cut-off of the second avalanche transistor, HVB high voltage bias circuit makes described avalanche transistor be in the state of critical snowslide, and the first storage capacitor and the second storage capacitor to pulse-generating circuit is charged respectively, energy storage effect due to the first inductance and the second inductance, the voltage that can make the first storage capacitor and the second storage capacitor two ends exceedes supply voltage, thus storing more electric charge, make discharge current bigger, produce pulse by a larger margin, therefore the requirement to supply voltage can be reduced.
nullIn the above-described embodiments，Input when there is no digital signal，When circuit is in static state，First storage capacitor is charged by the first voltage offset electric circuit by the first DC source，Second storage capacitor is charged by the second voltage offset electric circuit by the second DC source，Energy storage effect due to the first inductance and the second inductance，The voltage making the first storage capacitor and the first storage capacitor two ends exceedes supply voltage，When the first avalanche transistor on-off circuit and the second avalanche transistor snowslide simultaneously turn on，First storage capacitor and the second storage capacitor are respectively through the first avalanche transistor and the second avalanche transistor repid discharge，The discharge current of the two all can flow through energy storage inductor and load resistance，Thus producing the burst pulse of a negative sense on load resistance，Owing to the first storage capacitor and the second storage capacitor are only small，The quantity of electric charge stored is little，Quickly discharge current starts to reduce，Now due to the energy storage effect of energy storage inductor，Described energy storage inductor starts load resistance is discharged，The electric current making described load resistance is reverse，Thus producing the burst pulse of a forward，Two pulses are combined the approximate first differential Gauss ultra-wideband impulse signal of formation.
The ultra-wideband impulse signal obtained by the way is owing to without DC component, being more suitable for the transmitting of antenna；Secondly, the load resistance two ends parallel connection energy storage inductor of pulse-generating circuit, utilize the energy storage effect of energy storage inductor, direct disposable generation first differential Gauss ultra-wideband impulse signal, do not need additional peaker and filter circuit, decrease complexity and the cost of circuit；Furthermore, pulse-generating circuit adopts double pipe structure design so that the Amplitude Ratio single tube structure of the pulse signal of output is bigger, up to 4.3V, improve signal power, it is not necessary to additional broadband amplifier can meet transmitting power requirement, decrease complexity and the cost of circuit；Finally, due to the energy storage effect of inductance in voltage offset electric circuit, when storage capacitor is charged, the voltage that can make storage capacitor two ends exceedes supply voltage, when ensureing identical amplitude output signal, it is possible to store more electric charge, make discharge current bigger, produce pulse by a larger margin, therefore can reduce the requirement to supply voltage.
As in figure 2 it is shown, the ultra-wideband pulse that Fig. 2 is an alternative embodiment of the invention produces the circuit theory diagrams of circuit, including peaker, high-speed switching circuit, pulse-generating circuit and voltage offset electric circuit；
Described peaker includes RC peaker 1011 and a 2nd RC peaker；Wherein, a described RC peaker 1011 is composed in series by R1 and C1, described 2nd RC peaker 1012 is composed in series by R2 and C2, the digital square-wave of input is converted to two groups of spike signals that width is nanosecond by two groups of RC peakers, and the high-speed switching circuit for next stage provides triggering signal.In actual applications, the width of spike signal is determined by timeconstantτ=R × C, and the width of spike signal determines the ON time of high-speed switching circuit 102, generally takes 1ns once.
Described high-speed switching circuit is composed in parallel by the first avalanche transistor Q1 and the second avalanche transistor Q2.When not having digital signal to input, Q1 and Q2 is in cut-off state；When being inputted by digital signal, the first avalanche transistor Q1 receives the first spike signal produced by a RC peaker, and is transferred to snowslide conducting state by critical avalanche condition under the driving of described first spike signal；Described second avalanche transistor Q2 receives the second spike signal produced by the 2nd RC peaker, and transferred to snowslide conducting state by critical avalanche condition under the driving of described second spike signal, thus the pulse-generating circuit of next stage is promoted to produce approximate first differential Gauss ultra-wideband impulse signal.
In the present embodiment, by adopting the mode of two avalanche transistors parallel connections, when snowslide is turned on, the circuit of the single audion of current ratio flowing through load resistance doubles, so that the pulse amplitude produced doubles, improve the power of output pulse, it is not necessary to additional broadband amplifier, reduce complexity and the cost of circuit.
Wherein in an embodiment, the ultra-wideband pulse of the present invention produces circuit, described pulse-generating circuit includes: the first storage capacitor C1, the first storage capacitor C2, energy storage inductor L and load resistance R, the colelctor electrode of the first storage capacitor C1 and the first avalanche transistor Q1 is connected, the colelctor electrode of the second storage capacitor C2 and the second avalanche transistor Q2 is connected, and energy storage inductor L is connected in parallel on the two ends of load resistance R.
Wherein in an embodiment, the ultra-wideband pulse of the present invention produces circuit, and described pulse-generating circuit is additionally operable to；
When the first avalanche transistor Q1 and the second avalanche transistor Q2 is simultaneously in conducting state, first storage capacitor C1 and the first avalanche transistor Q1 and load resistance R constitutes the first discharge loop, produce the first discharge current, second storage capacitor C2 and the second avalanche transistor Q2 and load resistance R constitutes the second discharge loop, produce the second discharge current, described first discharge current and the second discharge current are carried on described load resistance R simultaneously, and form negative-going pulse.
When the quantity of electric charge of described first storage capacitor C1 and the second storage capacitor C2 reduces, described first discharge current and the second discharge current start to reduce, described energy storage inductor L starts described load resistance R is discharged, make the electric current by described load resistance R reverse, and on described load resistance R, form direct impulse, under the effect of described negative-going pulse and direct impulse, the outfan of described pulse-generating circuit forms ultra-wideband impulse signal.
Wherein in an embodiment, the ultra-wideband pulse of the present invention produces circuit, and described voltage offset electric circuit includes: the first biasing circuit 1041 and the second biasing circuit 1042；Wherein, described first biasing circuit 1041 includes the first DC source V1, the first inductance L1 and the first resistance R3, and is connected with the colelctor electrode of described first avalanche transistor Q1；Described second biasing circuit 1042 includes the second DC source V2, the second inductance L2 and the second resistance R4, and is connected with the colelctor electrode of described second avalanche transistor Q2.
In actual applications, when not having digital signal to input, the first avalanche transistor Q1 and the second avalanche transistor Q2 cut-off, described first storage capacitor C1 is charged by the first DC source V1 by the first voltage offset electric circuit 1041；Described second storage capacitor C2 is charged by the second DC source V2 by described second biasing circuit 1042, first HVB high voltage bias circuit 1041 makes the first avalanche transistor Q1 be in the state of critical snowslide, second HVB high voltage bias circuit 1042 makes the second avalanche transistor Q2 be in the state of critical snowslide, energy storage effect due to the first inductance L1 and the second inductance L2, the voltage that can make the first storage capacitor C1 and the second storage capacitor C2 two ends exceedes supply voltage, thus storing more electric charge, make discharge current bigger, produce pulse by a larger margin, therefore the requirement to supply voltage can be reduced.
When the first avalanche transistor Q1 and the second avalanche transistor Q2 conducting of snowslide simultaneously, first storage capacitor C1 and the second storage capacitor C2 is respectively through the first avalanche transistor Q1 and the second avalanche transistor Q2 repid discharge, the discharge current of the two all can flow through energy storage inductor L and load resistance R, thus producing the burst pulse of a negative sense on load resistance R, owing to the first storage capacitor C1 and the second storage capacitor C2 is only small, the quantity of electric charge stored is little, quickly discharge current starts to reduce, now due to the energy storage effect of energy storage inductor L, energy storage inductor L starts load resistance R is discharged, the electric current making load resistance R is reverse, thus producing the burst pulse of a forward, two pulses are combined the approximate first differential Gauss ultra-wideband impulse signal of formation.
The ultra-wideband impulse signal obtained by the way is owing to without DC component, being more suitable for the transmitting of antenna；Secondly, the load resistance two ends parallel connection energy storage inductor of pulse-generating circuit, utilize the energy storage effect of energy storage inductor, direct disposable generation first differential Gauss ultra-wideband impulse signal, do not need additional peaker and filter circuit, decrease complexity and the cost of circuit；Furthermore, pulse-generating circuit adopts double pipe structure design so that the Amplitude Ratio single tube structure of the pulse signal of output is bigger, up to 4.3V, improve signal power, it is not necessary to additional broadband amplifier can meet transmitting power requirement, decrease complexity and the cost of circuit；Finally, due to the energy storage effect of inductance in voltage offset electric circuit, when storage capacitor is charged, the voltage that can make storage capacitor two ends exceedes supply voltage, when ensureing identical amplitude output signal, it is possible to store more electric charge, make discharge current bigger, produce pulse by a larger margin, therefore can reduce the requirement to supply voltage.
As it is shown on figure 3, Fig. 3 is the oscillogram that the ultra-wideband pulse to an alternative embodiment of the invention produces that the pulse signal of the generation of circuit emulates, wherein, abscissa in figure represents the width of pulse signal, unit is ns, and vertical coordinate represents the voltage magnitude of pulse signal, and unit is V.
Adopting PspiceA/D that the pulse signal produced is emulated, wherein, input signal is the square-wave signal of 50MHz, and in figure, the peak value of pulse of display is about 23.7V, and pulse width is about 1.1ns.According to above-mentioned simulation waveform figure it is known that utilize the pulse amplitude that the ultra-wideband pulse generation circuit of the present invention produces higher, pulse width is nanosecond, it is possible to use as ultra-wideband pulse.
As shown in Figure 4, Fig. 4 is the oscillogram that the ultra-wideband pulse to an alternative embodiment of the invention produces that the pulse signal of the generation of circuit is surveyed, Agilent oscillograph DSO90804A is used to observe waveform, wherein, input signal is the square-wave signal of 25MHz, in figure, pulse peak peak value is about 4.3V, and pulse width is about 1.5ns.By test result, it can be seen that the ultra-wideband pulse of the present invention produces pulse amplitude produced by circuit, relatively greatly, pulse recurrence frequency is higher, pulse width is narrower, disclosure satisfy that the performance requirement of ultra broadband receive-transmit system, as: short-distance wireless communication and indoor positioning etc., circuit realiration is simple and practical.
Each technical characteristic of embodiment described above can combine arbitrarily, for making description succinct, the all possible combination of each technical characteristic in above-described embodiment is not all described, but, as long as the combination of these technical characteristics is absent from contradiction, all it is considered to be the scope that this specification is recorded.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes comparatively concrete and detailed, but can not therefore be construed as limiting the scope of the patent.It should be pointed out that, for the person of ordinary skill of the art, without departing from the inventive concept of the premise, it is also possible to making some deformation and improvement, these broadly fall into protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a ultra-wideband pulse produces circuit, it is characterised in that including: peaker, high-speed switching circuit, pulse-generating circuit and voltage offset electric circuit；
Described peaker, high-speed switching circuit and pulse-generating circuit are sequentially connected with, and described voltage offset electric circuit is connected with described high-speed switching circuit and pulse-generating circuit respectively；
Described peaker, for receiving the digital square-wave of externally input, and is converted to the spike signal that width is nanosecond by described digital square-wave；
Described high-speed switching circuit, for receiving the voltage that described HVB high voltage bias circuit provides, and is in critical avalanche condition；And transferred to snowslide conducting state by critical avalanche condition under the driving of described spike signal；
Described pulse-generating circuit, for producing negative-going pulse when described high-speed switching circuit turns on, and produces direct impulse, produces ultra-wideband impulse signal according to described negative-going pulse and direct impulse when described pulse-generating circuit discharges.
2. ultra-wideband pulse according to claim 1 produces circuit, it is characterised in that described peaker includes: a RC peaker and the 2nd RC peaker；
The outfan of a described RC peaker and the 2nd RC peaker is connected with described high-speed switching circuit respectively.
3. ultra-wideband pulse according to claim 2 produces circuit, it is characterised in that:
First digital square-wave of input is converted to the first spike signal by a described RC peaker, and transmits to high-speed switching circuit；
Second digital square-wave of input is converted to the second spike signal by described 2nd RC peaker, and transmits to high-speed switching circuit.
4. ultra-wideband pulse according to claim 3 produces circuit, it is characterised in that described high-speed switching circuit includes: the first avalanche transistor and the second avalanche transistor；
Described first avalanche transistor and the second avalanche transistor are connected with described pulse-generating circuit respectively.
5. ultra-wideband pulse according to claim 4 produces circuit, it is characterised in that:
Described first avalanche transistor receives described first spike signal, and is transferred to snowslide conducting state by critical avalanche condition under the driving of described first spike signal；
Described second avalanche transistor receives described second spike signal, and is transferred to snowslide conducting state by critical avalanche condition under the driving of described first spike signal.
6. ultra-wideband pulse according to claim 5 produces circuit, it is characterised in that described pulse-generating circuit includes: the first storage capacitor, the second storage capacitor, energy storage inductor and load resistance；
Described first storage capacitor is connected with the colelctor electrode of described first avalanche transistor, and described second storage capacitor is connected with the colelctor electrode of described second avalanche transistor；Described energy storage inductor is connected in parallel on the two ends of described load resistance；
When described first avalanche transistor and the second avalanche transistor are simultaneously in conducting state, described first storage capacitor constitutes the first discharge loop with described first avalanche transistor and described load resistance, produce the first discharge current, described second storage capacitor constitutes the second discharge loop with described second avalanche transistor and described load resistance, produces the second discharge current；
Described first discharge current and the second discharge current are carried on described load resistance simultaneously, and form negative-going pulse.
7. ultra-wideband pulse according to claim 6 produces circuit, it is characterised in that described pulse-generating circuit is additionally operable to；
When the quantity of electric charge of described first storage capacitor and the second storage capacitor reduces, described first discharge current and the second discharge current start to reduce, described energy storage inductor starts described load resistance is discharged, make the electric current by described load resistance reverse, and on described load resistance, form direct impulse.
8. ultra-wideband pulse according to claim 7 produces circuit, it is characterised in that:
Under the effect of described negative-going pulse and direct impulse, the outfan at described pulse-generating circuit produces ultra-wideband impulse signal.
9. ultra-wideband pulse according to claim 8 produces circuit, it is characterised in that described voltage offset electric circuit includes: the first biasing circuit and the second biasing circuit；
Described first biasing circuit includes the first DC source, the first inductance and the first resistance, and is connected with the colelctor electrode of described first avalanche transistor；
Described second biasing circuit includes the second DC source, the second inductance and the second resistance, and is connected with the colelctor electrode of described second avalanche transistor.
10. ultra-wideband pulse according to claim 9 produces circuit, it is characterised in that:
When not having digital signal to input, described first storage capacitor is charged by described first DC source by the first voltage offset electric circuit；
Described second storage capacitor is charged by described second DC source by described second biasing circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610069855.9A CN105763175A (en) | 2016-01-29 | 2016-01-29 | Ultra wide band pulse generation circuit |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1426164A (en) * | 2003-01-17 | 2003-06-25 | 东南大学 | Ultra wide band narrow pulse generator of subnanosecond duration |
| CN203661015U (en) * | 2013-12-24 | 2014-06-18 | 华中科技大学 | An ultra wide band pulse signal generation apparatus based on a memristor |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1426164A (en) * | 2003-01-17 | 2003-06-25 | 东南大学 | Ultra wide band narrow pulse generator of subnanosecond duration |
| CN203661015U (en) * | 2013-12-24 | 2014-06-18 | 华中科技大学 | An ultra wide band pulse signal generation apparatus based on a memristor |
Non-Patent Citations (1)
| Title |
|---|
| 赵陈亮: "典型超宽带信号的发射与接收技术", 《中国优秀硕士学位论文全文数据库》 * |
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Application publication date: 20160713 |