CN105976861A - High-power memristor circuit realized by virtue of SPWM control - Google Patents

High-power memristor circuit realized by virtue of SPWM control Download PDF

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Publication number
CN105976861A
CN105976861A CN201610326768.7A CN201610326768A CN105976861A CN 105976861 A CN105976861 A CN 105976861A CN 201610326768 A CN201610326768 A CN 201610326768A CN 105976861 A CN105976861 A CN 105976861A
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resistor
memristor circuit
thyristor
spwm
power memristor
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CN201610326768.7A
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CN105976861B (en
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陈艳峰
谭斌冠
张波
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South China University of Technology SCUT
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South China University of Technology SCUT
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods

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Abstract

The invention discloses a high-power memristor circuit realized by virtue of SPWM control. The high-power memristor circuit comprises an inductor L, a capacitor C, a resistor Rc, a resistor Ron, a resistor Roff, a thyristor, a PI controller and a comparison amplifier, wherein the inductor L makes current continuous and forms a low pass filter with the capacitor C and the resistor Rc so as to realize the same phase between input voltage and output current; the PI controller integrates the input voltage to obtain a magnetic flux variable, the comparison amplifier makes comparison between the magnetic flux variable and a triangular carrier to obtain an SPWM waveform, and the thyristor and the resistor Roff are connected in parallel to form a variable resistor with a controllable SPWM waveform. According to the high-power memristor circuit, by virtue of the SPWM waveform, the resistance value of the variable resistor is changed to conform to the properties of the resistance value of the memristor; by utilizing the power devices such as the inductor, the capacitor and the thyristor, the circuit structure is simple, and the thyristor with any power level can be theoretically realized; by utilizing the low pass filter, the output current is continuous and has the same phase with the input voltage.

Description

High-power memristor circuit realized by SPWM control
Technical Field
The invention relates to the technical field of power electronics, in particular to a high-power memristor circuit realized by SPWM control.
Background
The memristor is a basic element with a memory characteristic proposed by Hua-Kong scientist Chuan-Tang, and is divided into a magnetic control memristor and a charge control memristor, wherein the magnetic control memristor has the definition formula:
the fundamental characteristic of the memristor is that when a sine wave signal is input, a current-voltage characteristic curve of the memristor is in a 'oblique splayed' shape.
Hewlett packard produces nano-level memristors in 2008, but the memristors are mainly used for computer storage and are not suitable for power electronic circuits. Most of the existing memristor models are low-power models, namely, the models are built by devices such as multipliers and operational amplifiers, and the power of the models is limited to a certain extent.
The switch tube is connected with the resistor in parallel, the resistance value can be changed by utilizing a chopping mode, and a chopping-controlled variable resistor is built. Refer to the "chopper variable resistor and its application" in Zhang Guangyi.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a high-power memristor circuit realized by SPWM control.
The purpose of the invention is realized by the following technical scheme:
a high power memristor circuit implemented with SPWM control, the circuit comprising: the high-power memristor circuit comprises a low-pass filter, a variable resistor, a PI controller and a comparison amplifier, wherein an input voltage Vin is connected with an input end of the low-pass filter after being connected to the high-power memristor circuit through a first input end and a second input end, and an output end of the low-pass filter is connected with the variable resistor;
the input voltage Vin is sampled and transmitted to the PI controller, the PI controller outputs an adjusting wave Vq and then compares and amplifies a carrier signal Vc through the comparison amplifier to obtain a pulse voltage signal Vg, and the pulse voltage signal Vg controls the resistance change of the variable resistor.
Further, the low-pass filter comprises an inductor L, a capacitor C and a resistor Rc, wherein the capacitor C and the resistor Rc are connected in parallel and then connected with one end of the inductor L in series;
the first input end is connected with the other end of the inductor L, and the second input end is connected with the other ends of the capacitor C and the resistor Rc which are connected in parallel.
Further, the variable resistor comprises a resistor Ron, a resistor Roff and a thyristor, the resistor Roff and the thyristor are connected in parallel and then connected in series with one end of the resistor Ron, the other end of the resistor Ron is connected with one end of the inductor, and the other ends of the resistor Roff and the thyristor which are connected in parallel are connected with the other ends of the capacitor C and the resistor Rc which are connected in parallel.
Further, the pulse voltage signal Vg controls the on and off of the thyristor to control the resistance change of the variable resistor.
Further, the inductor L makes the output current continuous, the low-pass filter makes the output current have the same phase as the input voltage Vin, and the low-pass filter makes the high-power memristor circuit appear resistive as a whole.
Further, the PI controller integrates the input voltage Vin to obtain a magnetic flux variable, and the comparison amplifier compares the magnetic flux variable with the carrier signal Vc to obtain the pulse voltage signal Vg with the SPWM waveform.
Further, the carrier signal Vc is a triangular carrier.
Further, the high-power memristor circuit has the memristance value of
In the above formula, Ron is resistance, Roff is resistance, d (t) is duty ratio,
wherein,
represents the integral of the input voltage Vin, i.e., the magnetic flux;
representing the flux as a function of the input voltage Vin.
Compared with the prior art, the invention has the following advantages and effects:
1. the resistance value of the variable resistor is changed by using the needed SPWM waveform, so that the resistance value characteristic of the memristor is met.
2. The power device such as the resistor, the inductor, the capacitor, the thyristor and the like is used, the circuit structure is simple, the cost of the memristor model is reduced, the reliability of the memristor model is improved, and the power memristor with any grade can be realized theoretically.
3. The invention uses a low-pass filter to make the output current continuous and have the same phase with the input voltage.
4. Compared with the traditional type, the invention can be suitable for various power environments, including high-power circuit environments. The existing memristor model is limited by an operational amplifier, and the power level of the existing memristor model is mW. The memristor model realized by the SPWM is not limited in power in principle because the main circuit is not limited by devices such as an operational amplifier and the like.
Drawings
FIG. 1 is a schematic diagram of a high power memristor circuit implemented using SPWM control as disclosed in the present invention;
FIG. 2 is a circuit diagram of a high-power memristor circuit implemented by SPWM control disclosed in the present invention
FIG. 3 is the SPWM waveform of the control thyristor of the present invention;
FIG. 4 is a current-voltage characteristic curve of a high-power memristor circuit implemented with SPWM control as disclosed in the present invention.
Detailed Description
In order to make the technical means, the creation features, the achievement purposes and the effects of the invention easy to understand, the invention is further described in detail below by referring to the attached drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Examples
As shown in fig. 1, a specific structure of a high-power memristor circuit implemented by using an SPWM and a filter circuit is as follows: the first end (namely the end 1) of the input end is connected with one end of an inductor L, the other end of the inductor L is connected with one end of a capacitor C, one end of a resistor Rc and one end of a resistor Ron, the other end of the resistor Ron is connected with one end of a resistor Roff and one end of a switch tube, the other end of the resistor Roff is connected with the second end (namely the end 2) of the input end, the other end of the capacitor C, the other end of the resistor Rc and the other end of the switch tube. The input voltage Vin is sampled and transmitted to a PI controller (proportional-integral controller), then a modulation wave Vq is obtained, the modulation wave Vq and a carrier signal Vc are compared and amplified to obtain a pulse voltage signal Vg, and the pulse voltage signal Vg controls the on and off of a thyristor so as to control the change of resistance.
Referring to fig. 2, a specific example circuit diagram is shown. Given input voltage
Vin＝siny
In the formula
y＝100t
After the voltage detector V is sampled, the voltage detector V is integrated, and after the voltage detector V is subjected to proportional amplification and constant term addition, the voltage detector V is obtained
V2＝∫Vindt＝cos(100t)
The carrier signal is set to be a triangular wave with a frequency of 10^5 rad/s. At this time V2Comparing with the triangular wave to obtain SPWM waveform for controlling the on-off of the thyristor with duty ratio of
d ( t ) = 1 + cos y + Σ m = - ∞ m = ∞ ( ( - 1 ) m + 1 * J 0 ( m * π ) + 1 ) * sin ( m * x ) m * π 2 + Σ m = - ∞ m = ∞ Σ n = - ∞ n = ∞ ( ( - 1 ) m + n J n ( m * π ) cos ( m * x + n * y ) + ( - 1 ) m + n + 1 J n ( m * π ) sin ( m * x + n * y ) m * π 2
D (t) is subjected to element conversion and sum-difference product of trigonometric functions to obtain
In the above formula
x 100000t, representing a carrier signal;
representing the integral of the input voltage, i.e.A magnetic flux;
representing the functional relationship between the magnetic flux and the input voltage;
as shown in fig. 3. The resistance value connected in parallel with the switch is changed by the SPWM waveform
d(t)Roff,
Due to the filtering of the inductor and the capacitor, the memristance of the whole circuit is
Therefore, the resistance value of the circuit is a resistance value related to magnetic flux and accords with the definition formula of the memristor. The current-voltage characteristic curve of the current and the voltage presents a tilted splayed model of the memristor. The current-voltage characteristic is shown in fig. 4.
In summary, the invention discloses a high-power memristor circuit implemented by SPWM control, which comprises an inductor L, a capacitor C, a resistor Rc, a resistor Ron, a resistor Roff, a thyristor, a PI controller and a comparison amplifier. The inductor L makes the current continuous and forms a low-pass filter with the capacitor C and the resistor Rc, so that the input voltage and the output current are in the same phase. The PI controller integrates the input voltage to obtain a magnetic flux variable, the comparison amplifier compares the magnetic flux variable with a triangular carrier to obtain a required SPWM waveform, and the thyristor and the resistor Roff are connected in parallel to form a variable resistor controlled by the SPWM waveform. The resistance value of the variable resistor is changed by utilizing the SPWM waveform, so that the resistance value accords with the resistance value characteristic of the memristor; the circuit structure is simple by using power devices such as resistors, inductors, capacitors, thyristors and the like, and the power memristor with any grade can be realized theoretically; the output current is made continuous with the same phase as the input voltage by means of a low-pass filter.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (8)

1. A high power memristor circuit implemented with SPWM control, the circuit comprising: the high-power memristor circuit comprises a low-pass filter, a variable resistor, a PI controller and a comparison amplifier, wherein an input voltage Vin is connected with an input end of the low-pass filter after being connected to the high-power memristor circuit through a first input end and a second input end, and an output end of the low-pass filter is connected with the variable resistor;
the input voltage Vin is sampled and transmitted to the PI controller, the PI controller outputs an adjusting wave Vq and then compares and amplifies a carrier signal Vc through the comparison amplifier to obtain a pulse voltage signal Vg, and the pulse voltage signal Vg controls the resistance change of the variable resistor.
2. A high power memristor circuit implemented using SPWM control as claimed in claim 1 wherein the low pass filter comprises an inductor L, a capacitor C and a resistor Rc, the capacitor C and the resistor Rc being connected in parallel and then in series with one end of the inductor L;
the first input end is connected with the other end of the inductor L, and the second input end is connected with the other ends of the capacitor C and the resistor Rc which are connected in parallel.
3. A high power memristor circuit realized by SPWM control according to claim 2, wherein the variable resistor comprises a resistor Ron, a resistor Roff and a thyristor, the resistor Roff and the thyristor are connected in parallel and then connected in series with one end of the resistor Ron, the other end of the resistor Ron is connected with one end of the inductor, and the other end of the resistor Roff and the thyristor connected in parallel is connected with the other end of the capacitor C and the resistor Rc connected in parallel.
4. A high power memristor circuit implemented by SPWM control as claimed in claim 3 wherein the pulse voltage signal Vg controls the on and off of the thyristor to control the resistance change of the variable varistor.
5. A high power memristor circuit implemented using SPWM control as claimed in claim 2 wherein the inductance L is such that the output current is continuous, the low pass filter is such that the output current has the same phase as the input voltage Vin, and the low pass filter is such that the high power memristor circuit as a whole is resistive.
6. A high power memristor circuit implemented with SPWM control as claimed in claim 1,
the PI controller integrates the input voltage Vin to obtain a magnetic flux variable, and the comparison amplifier compares the magnetic flux variable with the carrier signal Vc to obtain the pulse voltage signal Vg of the SPWM waveform.
7. A high power memristor circuit implemented with SPWM control as claimed in claim 6 wherein the carrier signal Vc is a triangular carrier.
8. A high power memristor circuit implemented with SPWM control as claimed in any one of claims 1 to 7,
the high-power memristor circuit has the memristance value of
In the above formula, Ron is resistance, Roff is resistance, d (t) is duty ratio,
wherein,
represents the integral of the input voltage Vin, i.e., the magnetic flux;
representing the flux as a function of the input voltage Vin.
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CN106782648A (en) * 2017-02-10 2017-05-31 华南理工大学 A kind of memristor equivalent circuit realized based on voltage doubling rectifing circuit
CN111079365A (en) * 2019-12-12 2020-04-28 杭州电子科技大学 Arc tangent trigonometric function memristor circuit model
CN111487899A (en) * 2020-03-05 2020-08-04 杭州电子科技大学 Mechanical charge control memristor
CN112491390A (en) * 2020-12-30 2021-03-12 兰州大学 Active variable resistor

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CN111079365A (en) * 2019-12-12 2020-04-28 杭州电子科技大学 Arc tangent trigonometric function memristor circuit model
CN111079365B (en) * 2019-12-12 2023-11-10 杭州电子科技大学 Simulator of arc tangent trigonometric function memristor
CN111487899A (en) * 2020-03-05 2020-08-04 杭州电子科技大学 Mechanical charge control memristor
CN111487899B (en) * 2020-03-05 2021-06-22 杭州电子科技大学 Mechanical charge control memristor
CN112491390A (en) * 2020-12-30 2021-03-12 兰州大学 Active variable resistor

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