CN111487899B - Mechanical charge control memristor - Google Patents

Mechanical charge control memristor Download PDF

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CN111487899B
CN111487899B CN202010149019.8A CN202010149019A CN111487899B CN 111487899 B CN111487899 B CN 111487899B CN 202010149019 A CN202010149019 A CN 202010149019A CN 111487899 B CN111487899 B CN 111487899B
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module
resistor
memristor
steering engine
series
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CN111487899A (en
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许浩天
刘公致
王光义
丁心怡
徐嘉辉
邓超
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Hangzhou Dianzi University
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
    • G05B19/042—Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
    • G05B19/0423—Input/output
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/20—Pc systems
    • G05B2219/25—Pc structure of the system
    • G05B2219/25117—Resistors, value, combination defines a digital value

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Abstract

The invention discloses a mechanical load control memristor which comprises a series resistor module, a current sampling module and a steering engine control module, wherein the series resistor module comprises a fixed resistor and a controllable resistor which are connected in series, the current sampling module samples an electric signal on the fixed resistor, the sampled electric signal is preprocessed and then output to the steering engine control module, the steering engine control module carries out integral processing on the electric signal output by the current sampling module to obtain the total charge quantity flowing through the series resistor module, and then the controllable resistor resistance value is controlled to change according to the total charge quantity flowing through the series resistor module, so that the total resistance value of the series resistor module is adjusted. Compared with the memristor in the prior art, the memristor is more flexible to adjust and higher in power, and is convenient for marketization and commercialization.

Description

Mechanical charge control memristor
Technical Field
The application belongs to the technical field of electronic materials and devices, and particularly relates to a mechanical charge control memristor.
Background
The memristor is used as a nonlinear resistor with a memory function, brings great changes to the structural system, the principle and the design theory of an electronic circuit, is a fourth passive basic circuit element following a resistor, a capacitor and an inductor, and provides a foundation for further improvement of the memory function in the electronic technology. The memristor also plays a role in the field of computers, and can be used for manufacturing next generation memories, neural network computers and the like. Meanwhile, the memristor has wide application fields and wide development prospects in the fields of bioengineering and the like, and can be used for simulating a Barlow conditioned reflex experiment, manufacturing an equivalent circuit to simulate an amoeba experiment and the like.
The research on the design and the realization of the memristor has a profound influence on modern scientific technology. The memristor is divided into two types, namely a charge control memristor and a magnetic control memristor. The equivalent circuit of the magnetic control memristor is easy to realize, and a plurality of literature reports of the magnetic control memristor exist at present. Compared with a magnetic control memristor, the charge control memristor is closer to a physical device, and has more practical research value. However, some memristors designed based on semiconductor materials have low power and difficult control of memory characteristics in current reports of research results on charge-controlled memristors, and the commercialization and commercialization of the memristors are not realized.
Disclosure of Invention
The application aims at providing a mechanical charge control memristor to overcome the problems that the power of the existing memristor is small, the memory characteristic is not easy to control and the like in the prior art.
In order to achieve the purpose, the technical scheme of the application is as follows:
the utility model provides a mechanical type load control memory resistor, mechanical type load control memory resistor includes series resistance module, current sampling module and steering wheel control module, the series resistance module is including the definite value resistance and the controllable resistance of establishing ties, the signal of telecommunication on the definite value resistance of current sampling module sampling is exported steering wheel control module after the signal of telecommunication that obtains to the sampling is preprocessed, steering wheel control module carries out the integral processing to the signal of telecommunication of current sampling module output, obtains the total amount of charge that flows through the series resistance module, then controls the resistance change according to the total amount of charge that flows through the controllable resistance module, realizes the regulation of the total resistance of series resistance module.
Furthermore, the steering engine control module comprises a microprocessor and a steering engine, the microprocessor performs integral processing on the electric signal output by the current sampling module to obtain the total charge amount flowing through the series resistance module, then outputs a control signal according to the total charge amount flowing through the series resistance module to control the steering engine to rotate, and the steering engine rotates to drive the controllable resistor to act and adjust the resistance value of the controllable resistor.
Furthermore, the current sampling module comprises a differential amplification circuit, an amplification and lifting circuit and a reverse amplification circuit.
The mechanical type load control memristor that this application provided compares in prior art's memristor, and the adjustment is more nimble, and the power is bigger, is convenient for carry out marketization and commercialization. The resistance value of most of the existing memristors is discrete, and the resistance control part of the memristor provided by the application adopts the sliding rheostat, so that the continuous adjustment of the resistance value can be realized, and the working requirements of more circuits are met. The technical scheme of the application is different from the power value of a few microwatts which can be borne by the memristor provided in the previous research, and the sliding rheostat can bear the power of a few watts to a few tens of watts in the memristor provided by the application. The larger working power enables the circuit to be applied to circuits with more high power, and the circuit has wider application field. This application technical scheme compares with current memristor of recalling, and the resistance mediation of recalling the resistor that this application provided is more nimble, makes its memristor that is close an reality more, is convenient for drop into practical application and does benefit to its marketization, commercialization.
Drawings
FIG. 1 is a block diagram of a mechanical charge control memristor circuit structure according to the present application;
FIG. 2 is a schematic diagram of an embodiment of a microprocessor peripheral circuit;
FIG. 3 is a schematic diagram of a differential amplifier circuit according to an embodiment of the present application;
FIG. 4 is a schematic diagram of an amplifying and boosting circuit according to an embodiment of the present application;
fig. 5 is a schematic diagram of an inverse amplification circuit according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In the field of electronic materials and device technology, the memristor principle can be expressed by the following formula:
M＝Rfix+Radj＝Rfix+k∫i(t)dt
according to the above, the memristorThe resistance value M of (A) is determined by a constant value resistor RfixAnd a controllable resistance R controlled by the chargeadjThe calculation formula is as above, the charge is obtained by integrating the current i (t), and k is a calculation parameter.
Based on the above principle, the mechanical load control memristor is provided, the circuit block diagram of the mechanical load control memristor is shown in fig. 1, the mechanical load control memristor comprises a series resistance module, a current sampling module and a steering engine control module, and the series resistance module comprises a series constant resistance RfixAnd a controllable resistance RadjThe current sampling module samples a constant value resistor RfixThe electric signal obtained by sampling is preprocessed and then output to the steering engine control module, the steering engine control module carries out integral processing on the electric signal output by the current sampling module to obtain the total charge flowing through the series resistance module, and then the controllable resistor R is controlled according to the total charge flowing through the series resistance moduleadjThe resistance value is changed, and the adjustment of the total resistance value of the series resistance module is realized.
As shown in FIG. 1, the series resistance module of the present embodiment includes a constant value resistor R connected in seriesfixAnd a controllable resistance RadjConstant value resistance RfixSimultaneously also used as a sampling resistor, and a current sampling module samples a constant value resistor RfixThe above voltage can be converted into an equivalent current.
In one embodiment, the steering engine control module comprises a microprocessor and a steering engine, the microprocessor performs integration processing on the electric signal output by the current sampling module to obtain the total charge amount flowing through the series resistance module, then outputs a control signal to control the steering engine to rotate according to the total charge amount flowing through the series resistance module, and the steering engine rotates to drive the controllable resistor RadjActing to adjust the controllable resistance RadjThe resistance value of (c).
Controllable resistor R of the present embodimentadjFor slide-wire variable resistor, or rotation type variable resistor, change the size of resistance value through adjusting its sliding contact's position, this embodiment steering wheel rotates, drives sliding contact and removes simultaneously, realizes controllable resistance RadjThe resistance value of (2) is adjusted. Thereby completing the control and adjustment of the total resistance of the circuitAnd simulating the function of the charge control memristor. Simulated minimum resistance R of memristorminIs equal to RfixMaximum resistance value RmaxIs equal to Rfix+RadjThe value of the equivalent memristor is at RfixTo Rfix+RadjWithin a range.
STM32F103 is selected for the microprocessor of the embodiment, and the microprocessor has powerful function and rich resources, and is embedded with a plurality of hardware peripherals, such as a 12-bit analog-to-digital converter, a DMA controller, a camera interface, an LCD control interface, a system management unit, 8 16-bit timers, 2I 2C interfaces, 3 USART interfaces and the like. The microprocessor and its peripheral circuits are shown in FIG. 2. In addition to the present embodiment, other microprocessors having similar functions, such as STM32F2 series, STM32F4 series, STM32F7 series, and the like, may be used.
The microprocessor has a rated voltage sampling range (0-3.3V), and the voltages at two ends of the sampling resistor are smaller and have positive and negative values, so that the voltage needs to be preprocessed to reach the sampling range of the microprocessor.
In one embodiment, the current sampling module comprises a differential amplification circuit, an amplification lifting circuit and an inverse amplification circuit.
The differential amplifier circuit is designed by using an AD620 chip as shown in figure 3, the chip is an instrument amplifier integrated by three operational amplifiers, the monolithic structure and the laser crystal adjustment of the chip allow circuit elements to be closely matched and tracked, thereby ensuring the high performance of the circuit, providing simple differential bipolar input for a triode at the input end for protecting the high precision of gain control, obtaining lower input bias current by adopting a beta process, keeping the collector current of the input triode constant through the feedback of the internal operational amplifier of an input stage, and adding input voltage to an external gain control resistor RGThe above. The two internal gain resistances of the AD620 are 24.7k Ω, so the gain equation is:
Figure BDA0002401783650000041
according to the required gain, the external control resistance value can be obtained as follows:
Figure BDA0002401783650000042
in one embodiment, R is taken according to the above formula and the preset gain is G ═ 17＝RG49.9k Ω. Then the originally input sinusoidal signal is processed at R through AD620fixThe voltage value difference is amplified, and the formula is as follows:
Vo1＝GVBC
vo1 is the output signal of the differential amplifier circuit, VBCThe input signal of the differential amplifying circuit is B, C two contacts connected to a constant value resistor RfixThe point signal obtained by sampling at both ends of (1) can be obtained because the preset gain is G ═ 1:
Vo1＝VBC
because the current value has positive and negative values, the output value after the amplification of the circuit also has positive and negative values, and the singlechip can only sample positive voltage, the output voltage needs to be raised to a positive value.
Because the ADC module of the microprocessor can only identify the voltage value of 0-3.3V, and the input current can be in a positive direction or a reverse direction, the voltage obtained after AD620 sampling and amplification has a positive value and a negative value at the same time, and the voltage outside the sampling range needs to be integrated into the sampling range. In the embodiment, the two ends of the resistor which originally needs to be sampled are changed into voltage output at one end through the AD620 by the sampling resistor in the series resistor module through the differential amplification circuit, and two-stage amplification is realized in the TL 082.
The amplifying and boosting circuit of the present embodiment, as shown in fig. 4, uses an operational amplifier to realize simple voltage signal amplification. The amplification boost circuit utilizes a summing circuit:
Figure BDA0002401783650000051
for example, taking R according to the principles of the formulae1＝4kΩ，R2＝4kΩ，R3Can be obtained as 1k Ω
Figure BDA0002401783650000052
In this embodiment, the output is a reverse voltage after amplification and lifting, and the next stage of reverse amplification is needed to meet the a/D sampling requirement.
The reverse amplification circuit of the present application, as shown in fig. 5, reversely amplifies a signal with an amplification factor of R5Regulating and outputting voltage to a microprocessor for A/D measurement:
Figure BDA0002401783650000053
for example, to obtain a double reverse amplification, R is taken4＝1kΩ，R52k Ω, then:
Vout＝-2Vo2
after being processed by the amplifying and lifting circuit and the reverse amplifying circuit, the final output voltage meets the A/D conversion requirement of the microprocessor.
It should be noted that the amplifying and lifting circuit and the reverse amplifying circuit of the present application can share one operational amplifier TL082 chip, and use different pins, so that one chip can be saved, and the cost can be reduced.
The mechanical charge control memristor has the following working principle: after the power is on, the microprocessor initializes an ADC channel PA1 pin and a PWM channel PA8 pin, the ADC channel PA1 pin inputs a signal output by the current sampling module, the signal is subjected to integration processing to obtain the total charge flowing through the series resistance module, the value is corresponding to a sliding resistance value, the duty ratio of a PWM signal is converted, and then the PWM signal is output, so that the steering engine is controlled to rotate, and the resistance value of the memristor is changed.
Different from integration by hardware, the method and the device adopt the microprocessor to perform integration processing on the received electric signals so as to obtain the total charge flowing through the series resistance module. The microprocessor is adopted to carry out integration processing on the received electric signals, can be realized through software programming, and is used for calculating, so that circuits required by hardware integration are saved.
This application mechanical type load control memristor is recalled through experimental testing, has the ideal and reminds the necessary characteristic of resistor, and specific test result is as follows:
1. and (4) testing the volt-ampere characteristic.
Sinusoidal signals (voltage 1.5V and frequency 0.362Hz) are connected to two ends of the memristor, and tests show that the voltage-current hysteresis curve of the memristor presents the special 8-shaped shape of the memristor. The current-voltage characteristic of an ideal memristor is met.
2. And (5) testing the memory characteristics.
The power-failure memory characteristic is one of the most important characteristics of the memristor, so that the memristor has huge application potential in numerous fields. The test is divided into two steps: a forward voltage test and a reverse voltage test.
And (3) testing the forward voltage: the memristor gradually becomes smaller in resistance when the two ends of the memristor are in forward voltage, but the resistance is kept unchanged when the voltage is 0. Therefore, the forward pulse signal can be used as an input excitation in the power-down memory characteristic test. Since each period of the pulse signal is composed of a high level and a low level of 0V. Then at high level it is observed whether the memristor is tapering, while at low level it is kept unchanged, i.e. whether the resistance of the memristor at the falling and rising edges of adjacent pulses is equal.
During testing, pulse excitation signals with amplitude of 1.5V, duty ratio of 80% and frequency of 70Hz are input at two ends of a memristor model circuit, and a channel 1 of an oscilloscope is connected with voltage U at two ends of the memristorA2-channel sampling resistance voltage U of oscilloscopeBThe memristor can be equivalently used as the resistance value of the memristor, the test result shows that the memristor gradually reduces when positive voltage pulses are input, and the resistance values at the rising edge and the falling edge of adjacent pulses are the same, so that the memristor accords with the memory characteristic of an ideal memristor.
Reverse voltage test: the memristor gradually increases in resistance when a negative voltage is applied across the memristor, but remains unchanged when the voltage is 0. Therefore, the negative pulse signal can be used as input excitation in the power-down memory characteristic test. Since each period of the pulse signal consists of a negative level and 0V. Then at the negative level it is observed whether the memristor is becoming progressively larger, while at the 0 level it is kept constant, i.e. it is observed whether the resistances of the memristor at the falling and rising edges of adjacent pulses are equal.
During testing, negative pulse excitation signals with the amplitude of 1.5V, the duty ratio of 80% and the frequency of 70Hz are input at two ends of the memristor model circuit, and a channel 1 of the oscilloscope is connected with the voltage U at two ends of the memristorA2-channel sampling resistance voltage U of oscilloscopeBThe memristor can be equivalently used as the resistance of a memristor, and the test result shows that when a negative voltage pulse is input, the memristor gradually increases, and the resistances of the rising edge and the falling edge of adjacent pulses are the same, so that the memory characteristics of the ideal memristor are met.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (2)

1. A mechanical load control memristor is characterized by comprising a series resistor module, a current sampling module and a steering engine control module, wherein the series resistor module comprises a fixed resistor and a controllable resistor which are connected in series, the current sampling module samples an electric signal on the fixed resistor, the sampled electric signal is preprocessed and then output to the steering engine control module, the steering engine control module performs integral processing on the electric signal output by the current sampling module to obtain the total charge amount flowing through the series resistor module, and then the controllable resistor resistance value is controlled to change according to the total charge amount flowing through the series resistor module, so that the total resistance value of the series resistor module is adjusted;
the steering engine control module comprises a microprocessor and a steering engine, the microprocessor performs integral processing on the electric signals output by the current sampling module to obtain the total charge flowing through the series resistance module, then outputs control signals according to the total charge flowing through the series resistance module to control the steering engine to rotate, the steering engine rotates to drive the controllable resistor to act, and the resistance value of the controllable resistor is adjusted.
2. The mechanical charge-controlled memristor according to claim 1, wherein the current sampling module comprises a differential amplification circuit, an amplification boost circuit, and an inverse amplification circuit.
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102647180A (en) * 2011-02-21 2012-08-22 三星电子株式会社 Logic circuit, integrated circuit including logic circuit and method of operating integrated circuit
CN102916632A (en) * 2012-10-22 2013-02-06 中国矿业大学 Linear modeling method of switch reluctance motor memristor
US8391055B2 (en) * 2008-10-31 2013-03-05 Seagate Technology Llc Magnetic tunnel junction and memristor apparatus
CN103595392A (en) * 2013-07-02 2014-02-19 华南理工大学 Realization circuit and realization method for charge control type memristor
CN105450210A (en) * 2015-12-18 2016-03-30 杭州电子科技大学 Memristor simulator circuit based on digital potentiometer
CN105976861A (en) * 2016-05-17 2016-09-28 华南理工大学 High-power memristor circuit realized by virtue of SPWM control
CN107863213A (en) * 2017-11-02 2018-03-30 安徽理工大学 A kind of electric slide-wire rheostat
CN109686516A (en) * 2019-01-21 2019-04-26 上海图菱新能源科技有限公司 The continuous potentiometer of number

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105006322A (en) * 2015-07-30 2015-10-28 成都中微电微波技术有限公司 Voice control potentiometer provided with clamping electric brush and capable of being adjusted reversely
CN108846215B (en) * 2018-06-21 2022-04-26 成都师范学院 Extremely simple floating ground load control memristor circuit simulation model

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8391055B2 (en) * 2008-10-31 2013-03-05 Seagate Technology Llc Magnetic tunnel junction and memristor apparatus
CN102647180A (en) * 2011-02-21 2012-08-22 三星电子株式会社 Logic circuit, integrated circuit including logic circuit and method of operating integrated circuit
CN102916632A (en) * 2012-10-22 2013-02-06 中国矿业大学 Linear modeling method of switch reluctance motor memristor
CN103595392A (en) * 2013-07-02 2014-02-19 华南理工大学 Realization circuit and realization method for charge control type memristor
CN105450210A (en) * 2015-12-18 2016-03-30 杭州电子科技大学 Memristor simulator circuit based on digital potentiometer
CN105976861A (en) * 2016-05-17 2016-09-28 华南理工大学 High-power memristor circuit realized by virtue of SPWM control
CN107863213A (en) * 2017-11-02 2018-03-30 安徽理工大学 A kind of electric slide-wire rheostat
CN109686516A (en) * 2019-01-21 2019-04-26 上海图菱新能源科技有限公司 The continuous potentiometer of number

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A Chaotic Oscillator Based on HP Memristor Model;Guangyi Wang，ect.;《Mathematical Problems in Engineering》;20151231;全文 *
一个新的混沌系统及其电路设计与实现;王光义，等;《电路与系统学报》;20081031;第13卷(第5期);全文 *

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