CN205754268U - A kind of high-power memristor circuit utilizing SPWM control realization - Google Patents

Abstract

The utility model discloses a kind of high-power memristor circuit utilizing SPWM control realization, including inductance L, electric capacity C, resistance Rc, resistance Ron, resistance Roff, IGCT, PI controller, comparison amplifier.Inductance L makes electric current continuous, and constitutes low pass filter with electric capacity C, resistance Rc, makes input voltage and output current in phase position.Input voltage is integrated obtaining magnetic flux variable by PI controller, and magnetic flux variable and triangular carrier are compared and obtain SPWM waveform by comparison amplifier, and IGCT and resistance Roff compose in parallel the rheostat that SPWM waveform controls.This utility model utilizes SPWM waveform change rheostat resistance so that it is meet memristor resistance characteristic；Using resistance, inductance, electric capacity, IGCT constant power device, circuit structure is simple, can realize the power memristor of any grade；Utilize low pass filter to make to export electric current continuous, and with input voltage, there is identical phase place.

Description

High-power memristor circuit realized by SPWM control

Technical Field

The utility model relates to a power electronic technology field, in particular to utilize high-power of SPWM control realization to remember and hinder ware circuit.

Background

The memristor is a basic element with a memory characteristic proposed by Hua-Kong scientist Chuan-Tang, and is divided into a magnetic control memristor and a charge control memristor, wherein the magnetic control memristor has the definition formula:

the fundamental characteristic of the memristor is that when a sine wave signal is input, a current-voltage characteristic curve of the memristor is in a 'oblique splayed' shape.

Hewlett packard produces nano-level memristors in 2008, but the memristors are mainly used for computer storage and are not suitable for power electronic circuits. Most of the existing memristor models are low-power models, namely, the models are built by devices such as multipliers and operational amplifiers, and the power of the models is limited to a certain extent.

The switch tube is connected with the resistor in parallel, the resistance value can be changed by utilizing a chopping mode, and a chopping-controlled variable resistor is built. Refer to the "chopper variable resistor and its application" in Zhang Guangyi.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to overcome prior art's shortcoming and not enough, provide an utilize high-power memristor circuit that SPWM control realized.

The purpose of the utility model is realized through the following technical scheme:

a high power memristor circuit implemented with SPWM control, the circuit comprising: the high-power memristor circuit comprises a low-pass filter, a variable resistor, a PI controller and a comparison amplifier, wherein an input voltage Vin is connected with an input end of the low-pass filter after being connected to the high-power memristor circuit through a first input end and a second input end, and an output end of the low-pass filter is connected with the variable resistor;

the input voltage Vin is sampled and transmitted to the PI controller, the PI controller outputs an adjusting wave Vq and then compares and amplifies a carrier signal Vc through the comparison amplifier to obtain a pulse voltage signal Vg, and the pulse voltage signal Vg controls the resistance change of the variable resistor.

Further, the low-pass filter comprises an inductor L, a capacitor C and a resistor Rc, wherein the capacitor C and the resistor Rc are connected in parallel and then connected with one end of the inductor L in series;

the first input end is connected with the other end of the inductor L, and the second input end is connected with the other ends of the capacitor C and the resistor Rc which are connected in parallel.

Further, the variable resistor comprises a resistor Ron, a resistor Roff and a thyristor, the resistor Roff and the thyristor are connected in parallel and then connected in series with one end of the resistor Ron, the other end of the resistor Ron is connected with one end of the inductor, and the other ends of the resistor Roff and the thyristor which are connected in parallel are connected with the other ends of the capacitor C and the resistor Rc which are connected in parallel.

Further, the pulse voltage signal Vg controls the on and off of the thyristor to control the resistance change of the variable resistor.

Further, the inductor L makes the output current continuous, the low-pass filter makes the output current have the same phase as the input voltage Vin, and the low-pass filter makes the high-power memristor circuit appear resistive as a whole.

Further, the PI controller integrates the input voltage Vin to obtain a magnetic flux variable, and the comparison amplifier compares the magnetic flux variable with the carrier signal Vc to obtain the pulse voltage signal Vg with the SPWM waveform.

Further, the carrier signal Vc is a triangular carrier.

Further, the high-power memristor circuit has the memristance value of

In the above formula, Ron is resistance, Roff is resistance, d (t) is duty ratio,

Wherein,

represents the integral of the input voltage Vin, i.e., the magnetic flux;

representing the flux as a function of the input voltage Vin.

The utility model discloses for prior art have following advantage and effect:

1. the utility model discloses the SPWM waveform that utilizes needs changes the variable resistor resistance, makes it accord with to recall and hinders the ware resistance characteristic.

2. The utility model discloses use power devices such as resistance, inductance, electric capacity, thyristor, circuit structure is simple, has reduced the cost of recalling the resistance ware model and has improved its reliability to can realize in theory that the power of arbitrary grade is recalled and is hindered the ware.

3. The utility model discloses utilize low pass filter to make output current continuous to have the same phase place with input voltage.

4. The utility model discloses compare the tradition type, can be suitable for various power environment, including powerful circuit environment. The existing memristor model is limited by an operational amplifier, and the power level of the existing memristor model is mW. The memristor model realized by the SPWM is not limited in power in principle because the main circuit is not limited by devices such as an operational amplifier and the like.

Drawings

Fig. 1 is a schematic diagram of a high-power memristor circuit implemented by SPWM control disclosed in the present invention;

Fig. 2 is the utility model discloses a circuit diagram of high-power memristor circuit that utilizes SPWM control to realize

FIG. 3 is the SPWM waveform of the thyristor controlled in the present invention;

fig. 4 is the utility model discloses an utilize the volt-ampere characteristic curve of the high-power memristor circuit that SPWM control realized.

Detailed Description

In order to make the technical means, creation features, achievement purposes and functions of the present invention easy to understand, the present invention will be described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

Examples

As shown in fig. 1, a specific structure of a high-power memristor circuit implemented by using an SPWM and a filter circuit is as follows: the first end (namely the end 1) of the input end is connected with one end of an inductor L, the other end of the inductor L is connected with one end of a capacitor C, one end of a resistor Rc and one end of a resistor Ron, the other end of the resistor Ron is connected with one end of a resistor Roff and one end of a switch tube, the other end of the resistor Roff is connected with the second end (namely the end 2) of the input end, the other end of the capacitor C, the other end of the resistor Rc and the other end of the switch tube. The input voltage Vin is sampled and transmitted to a PI controller (proportional-integral controller), then a modulation wave Vq is obtained, the modulation wave Vq and a carrier signal Vc are compared and amplified to obtain a pulse voltage signal Vg, and the pulse voltage signal Vg controls the on and off of a thyristor so as to control the change of resistance.

Referring to fig. 2, a specific example circuit diagram is shown. Given input voltage

V_in＝sin y

In the formula

y＝100t

After the voltage detector V is sampled, the voltage detector V is integrated, and after the voltage detector V is subjected to proportional amplification and constant term addition, the voltage detector V is obtained

V₂＝∫V_indt＝cos(100t)

The carrier signal is set to be a triangular wave with a frequency of 10^5 rad/s. At this time V₂Comparing with the triangular wave to obtain SPWM waveform for controlling the on-off of the thyristor with duty ratio of

$\begin{array}{c}d\left(t\right)=\frac{1+\cos y+\underset{m=-\mathrm{\∞}}{\overset{m=\mathrm{\∞}}{\Σ}}\frac{({\left(-1\right)}^{m+1}*J_0(m*\mathrm{\π})+1)*\sin (m*x)}{m*x}}{2}\\ +\frac{\underset{m=-\mathrm{\∞}}{\overset{m=\mathrm{\∞}}{\Σ}}\underset{n=-\mathrm{\∞}}{\overset{n=\mathrm{\∞}}{\Σ}}\left(\frac{{(-1)}^{m+n}{J}_n(m*\mathrm{\π})\cos (m*x+n*y)+{(-1)}^{m+n+1}{J}_n(m*\mathrm{\π})\sin (m*x+n*y)}{m*\mathrm{\π}}\right)}{2}\end{array}$

D (t) is subjected to element conversion and sum-difference product of trigonometric functions to obtain

In the above formula

x 100000t, representing a carrier signal;

represents the integral of the input voltage, i.e., the magnetic flux;

representing the functional relationship between the magnetic flux and the input voltage;

as shown in fig. 3. The resistance value connected in parallel with the switch is changed by the SPWM waveform

d(t)R_off，

Due to the filtering of the inductor and the capacitor, the memristance of the whole circuit is

Therefore, the resistance value of the circuit is a resistance value related to magnetic flux and accords with the definition formula of the memristor. The current-voltage characteristic curve of the current and the voltage presents a tilted splayed model of the memristor. The current-voltage characteristic is shown in fig. 4.

To sum up, the utility model discloses an utilize high-power memristor circuit that SPWM control realized, including inductance L, electric capacity C, resistance Rc, resistance Ron, resistance Roff, thyristor, PI controller, comparison amplifier. The inductor L makes the current continuous and forms a low-pass filter with the capacitor C and the resistor Rc, so that the input voltage and the output current are in the same phase. The PI controller integrates the input voltage to obtain a magnetic flux variable, the comparison amplifier compares the magnetic flux variable with a triangular carrier to obtain a required SPWM waveform, and the thyristor and the resistor Roff are connected in parallel to form a variable resistor controlled by the SPWM waveform. The utility model changes the resistance value of the variable resistor by utilizing the SPWM waveform, so that the variable resistor accords with the resistance value characteristic of the memristor; the circuit structure is simple by using power devices such as resistors, inductors, capacitors, thyristors and the like, and the power memristor with any grade can be realized theoretically; the output current is made continuous with the same phase as the input voltage by means of a low-pass filter.

The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be equivalent replacement modes, and all are included in the scope of the present invention.

Claims (8)

1. A high power memristor circuit implemented with SPWM control, the circuit comprising: the high-power memristor circuit comprises a low-pass filter, a variable resistor, a PI controller and a comparison amplifier, wherein an input voltage Vin is connected with an input end of the low-pass filter after being connected to the high-power memristor circuit through a first input end and a second input end, and an output end of the low-pass filter is connected with the variable resistor;

the input voltage Vin is sampled and transmitted to the PI controller, the PI controller outputs an adjusting wave Vq and then compares and amplifies a carrier signal Vc through the comparison amplifier to obtain a pulse voltage signal Vg, and the pulse voltage signal Vg controls the resistance change of the variable resistor.

2. A high power memristor circuit implemented using SPWM control as claimed in claim 1 wherein the low pass filter comprises an inductor L, a capacitor C and a resistor Rc, the capacitor C and the resistor Rc being connected in parallel and then in series with one end of the inductor L;

the first input end is connected with the other end of the inductor L, and the second input end is connected with the other ends of the capacitor C and the resistor Rc which are connected in parallel.

3. A high power memristor circuit realized by SPWM control according to claim 2, wherein the variable resistor comprises a resistor Ron, a resistor Roff and a thyristor, the resistor Roff and the thyristor are connected in parallel and then connected in series with one end of the resistor Ron, the other end of the resistor Ron is connected with one end of the inductor, and the other end of the resistor Roff and the thyristor connected in parallel is connected with the other end of the capacitor C and the resistor Rc connected in parallel.

4. A high power memristor circuit implemented by SPWM control as claimed in claim 3 wherein the pulse voltage signal Vg controls the on and off of the thyristor to control the resistance change of the variable varistor.

5. A high power memristor circuit implemented using SPWM control as claimed in claim 2 wherein the inductance L is such that the output current is continuous, the low pass filter is such that the output current has the same phase as the input voltage Vin, and the low pass filter is such that the high power memristor circuit as a whole is resistive.

6. A high power memristor circuit implemented with SPWM control as claimed in claim 1,

the PI controller integrates the input voltage Vin to obtain a magnetic flux variable, and the comparison amplifier compares the magnetic flux variable with the carrier signal Vc to obtain the pulse voltage signal Vg of the SPWM waveform.

7. A high power memristor circuit implemented with SPWM control as claimed in claim 6 wherein the carrier signal Vc is a triangular carrier.

8. A high power memristor circuit implemented with SPWM control as claimed in any one of claims 1 to 7,

The high-power memristor circuit has the memristance value of

In the above formula, Ron is resistance, Roff is resistance, d (t) is duty ratio,

wherein,

represents the integral of the input voltage Vin, i.e., the magnetic flux;

representing the flux as a function of the input voltage Vin.