CN205754268U - A High Power Memristor Circuit Realized by SPWM Control - Google Patents

Abstract

The utility model discloses a kind of high-power memristor circuit utilizing SPWM control realization, including inductance L, electric capacity C, resistance Rc, resistance Ron, resistance Roff, IGCT, PI controller, comparison amplifier.Inductance L makes electric current continuous, and constitutes low pass filter with electric capacity C, resistance Rc, makes input voltage and output current in phase position.Input voltage is integrated obtaining magnetic flux variable by PI controller, and magnetic flux variable and triangular carrier are compared and obtain SPWM waveform by comparison amplifier, and IGCT and resistance Roff compose in parallel the rheostat that SPWM waveform controls.This utility model utilizes SPWM waveform change rheostat resistance so that it is meet memristor resistance characteristic；Using resistance, inductance, electric capacity, IGCT constant power device, circuit structure is simple, can realize the power memristor of any grade；Utilize low pass filter to make to export electric current continuous, and with input voltage, there is identical phase place.

Description

A High Power Memristor Circuit Realized by SPWM Control

technical field

The utility model relates to the technical field of power electronics, in particular to a high-power memristor circuit realized by SPWM control.

Background technique

The memristor is a basic component with memory characteristics proposed by the Chinese scientist Cai Shaotang. It is divided into a magnetron memristor and a charge-controlled memristor. The definition of the magnetron memristor is:

Its basic characteristic is that when a sine wave signal is input, the volt-ampere characteristic curve of the memristor is a "slope".

In 2008, Hewlett-Packard produced a nanoscale memristor, but the memristor is mainly used for computer storage, not suitable for power electronic circuits. Most of the existing memristor models are low-power models, which are built from multipliers, operational amplifiers and other devices, and their power is limited to a certain extent.

Connect the switch tube and the resistor in parallel, and use the chopping method to change the resistance value, and build a chopping controlled variable resistor. For details, please refer to "Chopping Variable Resistors and Their Applications" by Zhang Guangyi.

Utility model content

The purpose of the utility model is to overcome the shortcomings and deficiencies of the prior art, and provide a high-power memristor circuit realized by SPWM control.

The purpose of this utility model is achieved through the following technical solutions:

A high-power memristor circuit realized by SPWM control, the circuit includes: a low-pass filter, a variable resistor, a PI controller and a comparison amplifier, and the input voltage Vin is connected through the first input terminal and the second input terminal After entering the high-power memristor circuit, it is connected to the input end of the low-pass filter, and the output end of the low-pass filter is connected to the variable resistor;

The input voltage Vin is sampled and transmitted to the PI controller, the output of the PI controller is adjusted wave Vq and the carrier signal Vc is compared and amplified by the comparison amplifier to obtain a pulse voltage signal Vg, and the pulse voltage signal Vg controls The resistance of the variable resistor changes.

Further, the low-pass filter includes an inductor L, a capacitor C and a resistor Rc, the capacitor C and the resistor Rc are connected in parallel, and then connected in series with one end of the inductor L;

The first input end is connected to the other end of the inductor L, and the second input end is connected to the other end of the parallel capacitor C and resistor Rc.

Further, the variable resistor includes a resistor Ron, a resistor Roff, and a thyristor, the resistor Roff and the thyristor are connected in parallel and connected in series with one end of the resistor Ron, and the other end of the resistor Ron is connected to one end of the inductor, The parallel connected Roff and the other end of the thyristor are connected to the parallel connected capacitor C and the other end of the resistor Rc.

Further, the pulse voltage signal Vg controls the turn-on and turn-off of the thyristor so as to control the resistance change of the variable varistor.

Further, the inductance L makes the output current continuous, the low-pass filter makes the output current have the same phase as the input voltage Vin, and the low-pass filter makes the high-power memristor circuit appear resistive as a whole.

Further, the PI controller integrates the input voltage Vin to obtain the magnetic flux variable, and the comparison amplifier compares the magnetic flux variable with the carrier signal Vc to obtain the pulse voltage signal Vg of the SPWM waveform.

Further, the carrier signal Vc is a triangular carrier.

Further, the memristor value of the high-power memristor circuit is

In the above formula, Ron is resistance, Roff is resistance, d(t) is duty cycle,

in,

Represents the integral of the input voltage Vin, that is, the magnetic flux;

Represents the functional relationship between the magnetic flux and the input voltage Vin.

Compared with the prior art, the utility model has the following advantages and effects:

1. The utility model uses the required SPWM waveform to change the resistance value of the variable resistor so that it conforms to the resistance value characteristic of the memristor.

2. The utility model uses power devices such as resistors, inductors, capacitors, and thyristors. The circuit structure is simple, which reduces the cost of the memristor model and improves its reliability. In theory, any level of power memristor can be realized.

3. The utility model uses a low-pass filter to make the output current continuous and have the same phase as the input voltage.

4. Compared with the traditional type, the utility model can be applied to various power environments, including high-power circuit environments. Existing memristor models are limited by op amps to the power level of mW. The memristor model implemented by SPWM is not limited by the power of the main circuit because there are no operational amplifiers and other devices.

Description of drawings

Fig. 1 is a schematic diagram of a high-power memristor circuit realized by SPWM control disclosed in the utility model;

Fig. 2 is a circuit diagram of a high-power memristor circuit realized by using SPWM control disclosed in the utility model

Fig. 3 is the SPWM waveform of the control thyristor in the utility model;

Fig. 4 is a volt-ampere characteristic curve of a high-power memristor circuit realized by SPWM control disclosed in the utility model.

detailed description

In order to make the technical means, creative features, goals and effects achieved by the utility model easy to understand, the utility model will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described here are only used to explain the utility model, and are not intended to limit the utility model.

Example

As shown in Figure 1, the specific structure of a high-power memristor circuit realized by using SPWM and filter circuit is as follows: the first end of the input end (that is, the "1" end) is connected to one end of the inductance L, and the other end of the inductance L is connected to the capacitor C One end of the resistor Rc, one end of the resistor Ron are connected, the other end of the resistor Ron is connected to one end of the resistor Roff, and one end of the switch tube is connected, and the other end of the resistor Roff is connected to the second end of the input terminal (that is, the "2" end), The other end of the capacitor C, the other end of the resistor Rc, and the other end of the switch tube are connected. The input voltage Vin is sampled and transmitted to the PI controller (proportional-integral controller), and then the modulated wave Vq is obtained. The modulated wave Vq and the carrier signal Vc are compared and amplified to obtain the pulse voltage signal Vg. The pulse voltage signal Vg controls the conduction and switching of the thyristor. off to control the change in resistance.

As shown in Figure 2, a specific example circuit diagram is given. given input voltage

V _in = sin y

In the formula

y=100t

After the voltage detector V is sampled, it is integrated, scaled up and added to the constant term to obtain

V ₂ ＝∫V _in dt＝cos(100t)

Set the carrier signal as a triangle wave with a frequency of 10^5rad/s. At this time, V ₂ is compared with the triangular wave, and the SPWM waveform for controlling the on-off of the thyristor is obtained, and its duty cycle is

$\begin{array}{c}\mathrm{<span\; class="notranslate">\; d</span>}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>\frac{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; cos</span>}\mathrm{<span\; class="notranslate">\; the\; y</span>}<span\; class="notranslate">\; +</span>\underset{\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; =</span><span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; \&infin;</span>}}{\overset{\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; \&infin;</span>}}{<span\; class="notranslate">\; \&Sigma;</span>}}\frac{<span\; class="notranslate">\; (</span>{<span\; class="notranslate">\; (</span><span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; )</span>}^{\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; 1</span>}}<span\; class="notranslate">\; *</span>{\mathrm{<span\; class="notranslate">\; J</span>}}_{\mathrm{<span\; class="notranslate">\; 0</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; *</span>\mathrm{<span\; class="notranslate">\; \&pi;</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; *</span>\mathrm{<span\; class="notranslate">\; sin</span>}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; *</span>\mathrm{<span\; class="notranslate">\; x</span>}<span\; class="notranslate">\; )</span>}{\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; *</span>\mathrm{<span\; class="notranslate">\; x</span>}}}{\mathrm{<span\; class="notranslate">\; 2</span>}}\\ <span\; class="notranslate">\; +</span>\frac{\underset{\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; =</span><span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; \&infin;</span>}}{\overset{\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; \&infin;</span>}}{<span\; class="notranslate">\; \&Sigma;</span>}}\underset{\mathrm{<span\; class="notranslate">\; no</span>}<span\; class="notranslate">\; =</span><span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; \&infin;</span>}}{\overset{\mathrm{<span\; class="notranslate">\; no</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; \&infin;</span>}}{<span\; class="notranslate">\; \&Sigma;</span>}}<span\; class="notranslate">\; (</span>\frac{{<span\; class="notranslate">\; (</span><span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; )</span>}^{\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; no</span>}}{\mathrm{<span\; class="notranslate">\; J</span>}}_{\mathrm{<span\; class="notranslate">\; no</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; *</span>\mathrm{<span\; class="notranslate">\; \&pi;</span>}<span\; class="notranslate">\; )</span>\mathrm{<span\; class="notranslate">\; cos</span>}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; *</span>\mathrm{<span\; class="notranslate">\; x</span>}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; no</span>}<span\; class="notranslate">\; *</span>\mathrm{<span\; class="notranslate">\; the\; y</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; +</span>{<span\; class="notranslate">\; (</span><span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; )</span>}^{\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; no</span>}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; 1</span>}}{\mathrm{<span\; class="notranslate">\; J</span>}}_{\mathrm{<span\; class="notranslate">\; no</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; *</span>\mathrm{<span\; class="notranslate">\; \&pi;</span>}<span\; class="notranslate">\; )</span>\mathrm{<span\; class="notranslate">\; sin</span>}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; *</span>\mathrm{<span\; class="notranslate">\; x</span>}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; no</span>}<span\; class="notranslate">\; *</span>\mathrm{<span\; class="notranslate">\; the\; y</span>}<span\; class="notranslate">\; )</span>}{\mathrm{<span\; class="notranslate">\; m</span>}<span\; class="notranslate">\; *</span>\mathrm{<span\; class="notranslate">\; \&pi;</span>}}<span\; class="notranslate">\; )</span>}{\mathrm{<span\; class="notranslate">\; 2</span>}}\end{array}$

Substitution of d(t) and the product of sum and difference of trigonometric functions can be obtained

In the above formula

x=100000t, means carrier signal;

Indicates the integral of the input voltage, that is, the magnetic flux;

Represents the functional relationship between magnetic flux and input voltage;

As shown in Figure 3. Through the SPWM waveform, the resistance value connected in parallel with the switch changes, and its resistance value is

d(t)R _off ,

Due to the filtering of inductors and capacitors, the memristor value of the entire circuit is

It can be seen that the resistance value of the circuit is a resistance value related to the magnetic flux, which conforms to the definition formula of the memristor. The volt-ampere characteristic curve of its current and voltage presents the "oblique figure-eight" model of the memristor. Its volt-ampere characteristic curve is shown in Fig. 4.

In summary, the utility model discloses a high-power memristor circuit realized by SPWM control, including an inductor L, a capacitor C, a resistor Rc, a resistor Ron, a resistor Roff, a thyristor, a PI controller, and a comparison amplifier. The inductance L makes the current continuous, and forms a low-pass filter with the capacitor C and the resistor Rc, so that the input voltage and the output current have the same phase. The PI controller integrates the input voltage to obtain the flux variable, and the comparison amplifier compares the flux variable with the triangular carrier wave to obtain the required SPWM waveform. The thyristor and resistor Roff are connected in parallel to form a variable resistor controlled by the SPWM waveform. The utility model uses the SPWM waveform to change the resistance value of the variable resistor so that it conforms to the resistance value characteristics of the memristor; using power devices such as resistors, inductors, capacitors, and thyristors, the circuit structure is simple, and theoretically any level of power memristor can be realized. device; use a low-pass filter to make the output current continuous and have the same phase as the input voltage.

The above-mentioned embodiment is a preferred implementation mode of the present utility model, but the implementation mode of the present utility model is not limited by the above-mentioned embodiment, and any other changes, modifications and substitutions made without departing from the spirit and principle of the present utility model , combination, and simplification, all should be equivalent replacement methods, and are all included in the protection scope of the present utility model.

Claims (8)

1. A high-power memristor circuit utilizing SPWM control is characterized in that the circuit comprises: a low-pass filter, a variable resistor, a PI controller and a comparison amplifier, and the input voltage Vin passes through the first input terminal After the second input terminal is connected to the high-power memristor circuit, it is connected to the input terminal of the low-pass filter, and the output terminal of the low-pass filter is connected to the variable resistor; The input voltage Vin is sampled and transmitted to the PI controller, the output of the PI controller is adjusted wave Vq and the carrier signal Vc is compared and amplified by the comparison amplifier to obtain a pulse voltage signal Vg, and the pulse voltage signal Vg controls The resistance of the variable resistor changes. 2. A kind of high-power memristor circuit utilizing SPWM control to realize according to claim 1, it is characterized in that, described low-pass filter comprises inductance L, electric capacity C and resistance Rc, and described electric capacity C and resistance Rc connected in parallel, and then connected in series with one end of the inductor L; The first input end is connected to the other end of the inductor L, and the second input end is connected to the other end of the parallel capacitor C and resistor Rc. 3. a kind of high-power memristor circuit utilizing SPWM control to realize according to claim 2, it is characterized in that, described variable resistor comprises resistance Ron, resistance Roff and thyristor, after described resistance Roff and thyristor are connected in parallel One end of the resistor Ron is connected in series, the other end of the resistor Ron is connected to one end of the inductor, the other end of the Roff and the thyristor connected in parallel are connected to the capacitor C and the other end of the resistor Rc in parallel. 4. A high-power memristor circuit realized by SPWM control according to claim 3, wherein the pulse voltage signal Vg controls the turn-on and turn-off of the thyristor so as to control the variable varistor resistance change. 5. A kind of high-power memristor circuit utilizing SPWM control to realize according to claim 2, it is characterized in that, described inductance L makes output current continuous, and described low-pass filter makes output current and input voltage Vin have same phase, and the low-pass filter makes the high-power memristor circuit appear resistive as a whole. 6. a kind of high-power memristor circuit utilizing SPWM control to realize according to claim 1, is characterized in that, The PI controller integrates the input voltage Vin to obtain a magnetic flux variable, and the comparison amplifier compares the magnetic flux variable with the carrier signal Vc to obtain the pulse voltage signal Vg of the SPWM waveform. 7. A high-power memristor circuit realized by SPWM control according to claim 6, wherein the carrier signal Vc is a triangular carrier. 8. A kind of high-power memristor circuit utilizing SPWM control to realize according to any one of claims 1 to 7, characterized in that, The memristor value of the high-power memristor circuit is In the above formula, Ron is resistance, Roff is resistance, d(t) is duty cycle, in, Represents the integral of the input voltage Vin, that is, the magnetic flux; Represents the functional relationship between the magnetic flux and the input voltage Vin.