CN204885822U - Semiconductor laser drive circuit reaches semiconductor laser including this circuit - Google Patents
Semiconductor laser drive circuit reaches semiconductor laser including this circuit Download PDFInfo
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- CN204885822U CN204885822U CN201520709037.1U CN201520709037U CN204885822U CN 204885822 U CN204885822 U CN 204885822U CN 201520709037 U CN201520709037 U CN 201520709037U CN 204885822 U CN204885822 U CN 204885822U
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- semiconductor laser
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Abstract
The utility model discloses a semiconductor laser drive circuit reaches semiconductor laser including this circuit, including the differentiating circuit, snowslide triode, the energy -storage capacitor that are used for receiving the external trigger signal and produce the forward burst pulse, be used for it is right during the disconnection of snowslide triode charging circuit that energy -storage capacitor goes on charging, be used for when switching on, receives by the snowslide triode the smooth pulse -generating circuit of energy in order to drive semiconductor laser production pulsed laser that energy -storage capacitor discharges and releases, the utility model discloses that utilizes the snowslide triode switches on and turn -offs the characteristic fast, the pulse that can produce the subnanosecond level, and response time is fast, resistance -capacitance parameter through adjustment differentiating circuit can decide the pulse width of maximum possible, and pulse width is adjustable, the good reproducibility, increase the size that energy -storage capacitor appearance value and mains voltage size can improve drive current, also adjustable pulse width, charging circuit can charge to energy -storage capacitor when the snowslide triode breaks off, does and finely tunes the pulse width.
Description
Technical field
The utility model relates to laser field, more particularly, relates to the semiconductor laser device driving circuit of the subnanosecond level that a kind of response time is fast, peak current is large and comprises the laser of this circuit.
Background technology
Along with development and the application of semiconductor laser technique, miniaturized semiconductor pulse laser uses more and more extensive in measurement, industry and military field.In laser sensing, laser ranging, laser scanning, medical electronics and military thorough fare etc., all need the semiconductor laser diode of pole narrow spaces and large peak current.The width of pulse is narrower, then spatial resolution is higher, and the even millimetre-sized resolution of Centimeter Level needs the pulsewidth reaching 100ps rank to drive, and pulsewidth is less simultaneously, just requires larger peak current, to ensure the signal to noise ratio of system.
The drive circuit of traditional pulse laser, the general MOSFET that adopts, as switching device, even adopts the RF high power metal-oxide-semiconductor that price is very expensive.But the input capacitance of MOSFET reaches hundred pF ranks, the rise and fall of its drive singal are along being difficult to accomplish below 10ns, therefore MOSFET is difficult to drop to 15 ~ below 20ns switching time, particularly when reaching the large pulse current of tens amperes, its drive circuit is also difficult to laser pulse to accomplish below 15ns.
Utility model content
The technical problems to be solved in the utility model is, for the defect that above-mentioned pulse duration is limited, peak drive current is less of prior art, the semiconductor laser device driving circuit of the subnanosecond level that a kind of response time is fast, peak current is large is provided and comprises the laser of this circuit.
The utility model solves the technical scheme that its technical problem adopts: construct a kind of semiconductor laser device driving circuit, comprise for receive outer triggering signal and produce the differential circuit of forward burst pulse, avalanche transistor, storage capacitor, for when described avalanche transistor disconnects, described storage capacitor is charged charging circuit, for receiving the energy of described storage capacitor electric discharge release during in described avalanche transistor conducting with the light pulse generation circuit driving semiconductor laser to produce pulse laser;
The output of described differential circuit is connected to the base stage of described avalanche transistor, the collector electrode of described avalanche transistor is connected to internal electric source via a current-limiting resistance, the collector electrode of described avalanche transistor is also connected to the first end of storage capacitor, described charging circuit and light pulse produce circuit be all connected to the second end of storage capacitor and the emitter of described avalanche transistor indirectly, the grounded emitter of described avalanche transistor, wherein, the first breakdown voltage that described internal electric source is greater than described avalanche transistor is less than the secondary breakdown voltage of described avalanche transistor.
In semiconductor laser device driving circuit described in the utility model, described differential circuit comprises the first electric capacity, the first resistance, the second resistance; The first end of described first electric capacity is for receiving described triggering signal, second end of described first electric capacity is connected to the base stage of described avalanche transistor by described first resistance, one end of described second resistance is connected to the other end ground connection of the base stage of described avalanche transistor, described second resistance.
In semiconductor laser device driving circuit described in the utility model, light pulse produces circuit and comprises the first inductance and semiconductor laser diode; Second end of described storage capacitor is connected to the negative electrode of described semiconductor laser diode, and the anode of described semiconductor laser diode is connected to the emitter of described avalanche transistor via described first inductance.
In semiconductor laser device driving circuit described in the utility model, described charging circuit comprises fly-wheel diode and the 4th resistance; Second end of described storage capacitor is connected to the anode of fly-wheel diode and one end of the 4th resistance, and the negative electrode of described fly-wheel diode and the other end of the 4th resistance are all connected to the emitter of described avalanche transistor.
In semiconductor laser device driving circuit described in the utility model, described drive circuit also comprises for carrying out the plastic filter circuit of shaping to the pulse laser produced, described plastic filter circuit be connected to the second end of described storage capacitor and the emitter of described avalanche transistor indirectly.
In semiconductor laser device driving circuit described in the utility model, described plastic filter circuit comprises filter capacitor and the second inductance; Described filter capacitor and the second inductance are connected between the second end of described storage capacitor and the emitter of described avalanche transistor.
In semiconductor laser device driving circuit described in the utility model, the model of described avalanche transistor is ZTX415.
In semiconductor laser device driving circuit described in the utility model, the input of described differential circuit is also connected with for receiving described triggering signal and this triggering signal being carried out to the buffer amplifier circuit of Hyblid Buffer Amplifier.
In semiconductor laser device driving circuit described in the utility model, described buffer amplifier circuit comprises the chip that model is TC4422A.
The invention also discloses a kind of semiconductor laser comprising described semiconductor laser device driving circuit,
Implement semiconductor laser device driving circuit of the present utility model and comprise the laser of this circuit, there is following beneficial effect: the energy that the utility model can receive storage capacitor electric discharge release at conducting optical pulse generation circuit can produce pulse laser, avalanche transistor can be formed fast avalanche effect by driving during conducting in its base stage, for the pulse producing subnanosecond level provides precondition, the response time is fast; Can be determined the pulse duration of maximum possible by the capacitance-resistance parameter adjusting differential circuit, pulse duration is adjustable, reproducible, and adopts differential circuit, then only depend on the forward position of triggering signal, reduce the PCB design requirement in triggering signal transmissions process; Increase storage capacitor capacitance and supply voltage size can improve the size of drive current, also adjustable pulse duration; Charging circuit can charge to storage capacitor when avalanche transistor disconnects, and also can finely tune pulsewidth.Further, the plastic filter circuit that filter capacitor and the second inductance are formed, can carry out shaping by paired pulses waveform, promote the steepness of impulse waveform.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the utility model is described in further detail, in accompanying drawing:
Fig. 1 is the electrical block diagram of the preferred embodiment of the utility model semiconductor laser device driving circuit;
Fig. 2 is the part-structure schematic diagram of another embodiment of the utility model semiconductor laser device driving circuit.
Embodiment
In order to there be understanding clearly to technical characteristic of the present utility model, object and effect, now contrast accompanying drawing and describe embodiment of the present utility model in detail.
With reference to figure 1, it is the electrical block diagram of the utility model semiconductor laser device driving circuit.
Semiconductor laser device driving circuit of the present utility model, comprise for receive outer triggering signal and produce the differential circuit 10 of forward burst pulse, avalanche transistor Q1, storage capacitor C2, for when described avalanche transistor Q1 disconnects, described storage capacitor C2 is charged charging circuit 30, discharge the energy of release with the light pulse generation circuit 20 driving semiconductor laser to produce pulse laser for receiving described storage capacitor C2 during in described avalanche transistor Q1 conducting.
Preferably, in preferred embodiment, described drive circuit also comprises the plastic filter circuit 40 for carrying out shaping to the pulse laser produced.
Wherein, the output of described differential circuit 10 is connected to the base stage of described avalanche transistor Q1, the collector electrode of described avalanche transistor Q1 is connected to internal electric source via a current-limiting resistance R3, the first breakdown voltage that described internal electric source is greater than described avalanche transistor Q1 is less than the secondary breakdown voltage of described avalanche transistor Q1, the collector electrode of described avalanche transistor Q1 is also connected to the first end of storage capacitor C2, described charging circuit 30, light pulse produces circuit 20, plastic filter circuit 40 be all connected to second end of storage capacitor C2 and the emitter of described avalanche transistor Q1 indirectly, the grounded emitter of described avalanche transistor Q1.
Concrete: described differential circuit 10 comprises the first electric capacity C1, the first resistance R1, the second resistance R2; Light pulse produces circuit 20 and comprises the first inductance L 1 and semiconductor laser diode LD 1; Described charging circuit 30 comprises sustained diode 1 and the 4th resistance R4; Described plastic filter circuit 40 comprises filter capacitor C3 and the second inductance L 2.
The first end of described first electric capacity C1 is for receiving described triggering signal, second end of described first electric capacity C1 is connected to the base stage of described avalanche transistor Q1 by described first resistance R1, one end of described second resistance R2 is connected to the other end ground connection of the base stage of described avalanche transistor Q1, described second resistance R2.Second end of described storage capacitor C2 is connected to the negative electrode of described semiconductor laser diode LD 1, and the anode of described semiconductor laser diode LD 1 is connected to the emitter of described avalanche transistor Q1 via described first inductance L 1.Second end of described storage capacitor C2 is connected to the anode of sustained diode 1 and one end of the 4th resistance R4, and the negative electrode of described sustained diode 1 and the other end of the 4th resistance R4 are all connected to the emitter of described avalanche transistor Q1.Described filter capacitor C3 and the second inductance L 2 are connected between second end of described storage capacitor C2 and the emitter of described avalanche transistor Q1.
Differential circuit 10, for detecting the rising edge of triggering signal TRIG, produces a forward burst pulse, owing to only depending on the forward position of triggering signal, reduces the PCB design requirement in triggering signal transmissions process.Avalanche transistor Q1 is used for turn-on and turn-off fast, for the pulse producing subnanosecond level provides precondition, response time is fast, due to fast the open ability of avalanche transistor Q1 under avalanche condition and transient high-current conduction, can provide the pulse of ultra-narrow large driven current density for pulse laser.Can be determined the pulse duration of maximum possible by the capacitance-resistance parameter adjusting differential circuit 10, pulse duration is adjustable, reproducible, and repetition rate is up to MHz rank.Storage capacitor C2 is used for being charged when avalanche transistor Q1 turns off, and carries out power storage; When avalanche transistor Q1 conducting, carry out energy and discharge, drive semiconductor laser diode LD 1 to work; Increase storage capacitor C2 capacitance and supply voltage VCC size can improve the size of drive current, and peak drive current reaches tens amperes.The plastic filter circuit 40 that filter capacitor C3 and the second inductance L 2 are formed, can carry out shaping by paired pulses waveform, promote the steepness of impulse waveform.
Wherein, the model of described avalanche transistor Q1 can be ZTX415, or has the chip of similar functions.
Wherein, supply voltage VCC must be less than secondary breakdown voltage higher than the first breakdown voltage of avalanche transistor Q1.Higher than first breakdown voltage, could be formed avalanche effect fast in its base stage by driving during conducting, just likely producing the pulse of subnanosecond level, most I is less than 1ns; Can not higher than secondary breakdown voltage, otherwise device will damage.
With reference to figure 2, further, if the driving force of outer triggering signal is inadequate, the buffer amplifier circuit 50 of triggering signal is also needed.Now, be also connected with for receiving described triggering signal and this triggering signal being carried out to the buffer amplifier circuit 50 of Hyblid Buffer Amplifier at the input of described differential circuit 10.Such as, described buffer amplifier circuit 50 can adopt model to be the chip of TC4422A, or has the chip of similar functions.
Operation principle of the present utility model is as follows:
Triggering signal TRIG first carries out rising edge of a pulse detection through differential circuit 10, produce the forward narrow potential pulse corresponding with triggering signal rising edge, the narrow potential pulse of this forward drives the base stage of avalanche transistor Q1, when the narrow potential pulse of forward opens thresholding higher than avalanche transistor Q1, avalanche transistor Q1 conducting.Be equivalent to short circuit between the emitter and collector of now avalanche transistor Q1, storage capacitor C2, by semiconductor laser diode LD 1, first inductance L 1, the collection emitter-base bandgap grading being equivalent to the avalanche transistor Q1 of short circuit, carries out loop electric discharge by ground.The size of current of electric discharge is determined by the capacitance of storage capacitor C2.During electric discharge, carry out energy and discharge, thus drive semiconductor laser diode LD 1 to work; After the narrow direct impulse of differential circuit 10 generation passes through, the base voltage of avalanche transistor Q1 is less than its conducting voltage, then avalanche transistor Q1 turns off.Supply voltage VCC, by the 3rd resistance and sustained diode 1, charges to storage capacitor C2, carries out energy storage preparation before the rising edge of a pulse arrival for next triggering signal TRIG.When semiconductor laser diode LD 1 is the small area analysis laser of hundred milliamperes of ranks, when supply voltage VCC is much smaller than the first breakdown voltage of avalanche transistor Q1, described drive circuit for laser also can obtain other pulse duration of nanosecond.
The invention also discloses a kind of semiconductor laser comprising described semiconductor laser device driving circuit.
In sum, implement semiconductor laser device driving circuit of the present utility model and comprise the laser of this circuit, there is following beneficial effect: the energy that the utility model can receive storage capacitor electric discharge release at conducting optical pulse generation circuit can produce pulse laser, avalanche transistor can be formed fast avalanche effect by driving during conducting in its base stage, for the pulse producing subnanosecond level provides precondition, the response time is fast; Can be determined the pulse duration of maximum possible by the capacitance-resistance parameter adjusting differential circuit, pulse duration is adjustable, reproducible, and adopts differential circuit, then only depend on the forward position of triggering signal, reduce the PCB design requirement in triggering signal transmissions process; Increase storage capacitor capacitance and supply voltage size can improve the size of drive current, also adjustable pulse duration; Charging circuit can charge to storage capacitor when avalanche transistor disconnects, and also can finely tune pulsewidth.Further, the plastic filter circuit that filter capacitor and the second inductance are formed, can carry out shaping by paired pulses waveform, promote the steepness of impulse waveform.
By reference to the accompanying drawings embodiment of the present utility model is described above; but the utility model is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; instead of it is restrictive; those of ordinary skill in the art is under enlightenment of the present utility model; do not departing under the ambit that the utility model aim and claim protect, also can make a lot of form, these all belong within protection of the present utility model.
Claims (10)
1. a semiconductor laser device driving circuit, it is characterized in that, comprise for receiving outer triggering signal and producing the differential circuit (10) of forward burst pulse, avalanche transistor (Q1), storage capacitor (C2), for when described avalanche transistor (Q1) disconnects to the charging circuit (30) that described storage capacitor (C2) charges, for receiving the energy of described storage capacitor (C2) electric discharge release when described avalanche transistor (Q1) conducting with light pulse generation circuit (20) driving semiconductor laser to produce pulse laser,
The output of described differential circuit (10) is connected to the base stage of described avalanche transistor (Q1), the collector electrode of described avalanche transistor (Q1) is connected to internal electric source via a current-limiting resistance (R3), the collector electrode of described avalanche transistor (Q1) is also connected to the first end of storage capacitor (C2), described charging circuit (30) and light pulse produce circuit (20) be all connected to the second end of storage capacitor (C2) and the emitter of described avalanche transistor (Q1) indirectly, the grounded emitter of described avalanche transistor (Q1), wherein, the first breakdown voltage that described internal electric source is greater than described avalanche transistor (Q1) is less than the secondary breakdown voltage of described avalanche transistor (Q1).
2. semiconductor laser device driving circuit according to claim 1, is characterized in that, described differential circuit (10) comprises the first electric capacity (C1), the first resistance (R1), the second resistance (R2); The first end of described first electric capacity (C1) is for receiving described triggering signal, second end of described first electric capacity (C1) is connected to the base stage of described avalanche transistor (Q1) by described first resistance (R1), one end of described second resistance (R2) is connected to the other end ground connection of the base stage of described avalanche transistor (Q1), described second resistance (R2).
3. semiconductor laser device driving circuit according to claim 1, is characterized in that, light pulse produces circuit (20) and comprises the first inductance (L1) and semiconductor laser diode (LD1); Second end of described storage capacitor (C2) is connected to the negative electrode of described semiconductor laser diode (LD1), and the anode of described semiconductor laser diode (LD1) is connected to the emitter of described avalanche transistor (Q1) via described first inductance (L1).
4. semiconductor laser device driving circuit according to claim 1, is characterized in that, described charging circuit (30) comprises fly-wheel diode (D1) and the 4th resistance (R4); Second end of described storage capacitor (C2) is connected to the anode of fly-wheel diode (D1) and one end of the 4th resistance (R4), and the negative electrode of described fly-wheel diode (D1) and the other end of the 4th resistance (R4) are all connected to the emitter of described avalanche transistor (Q1).
5. semiconductor laser device driving circuit according to claim 1, it is characterized in that, described drive circuit also comprises for carrying out the plastic filter circuit (40) of shaping to the pulse laser produced, described plastic filter circuit (40) be connected to the second end of described storage capacitor (C2) and the emitter of described avalanche transistor (Q1) indirectly.
6. semiconductor laser device driving circuit according to claim 5, is characterized in that, described plastic filter circuit (40) comprises filter capacitor (C3) and the second inductance (L2); Described filter capacitor (C3) and the second inductance (L2) are connected between the second end of described storage capacitor (C2) and the emitter of described avalanche transistor (Q1).
7. semiconductor laser device driving circuit according to claim 1, is characterized in that, the model of described avalanche transistor (Q1) is ZTX415.
8. semiconductor laser device driving circuit according to claim 1, it is characterized in that, the input of described differential circuit (10) is also connected with for receiving described triggering signal and this triggering signal being carried out to the buffer amplifier circuit (50) of Hyblid Buffer Amplifier.
9. semiconductor laser device driving circuit according to claim 8, is characterized in that, described buffer amplifier circuit (50) comprises the chip that model is TC4422A.
10. a semiconductor laser, is characterized in that, comprises the semiconductor laser device driving circuit described in any one of claim 1-9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520709037.1U CN204885822U (en) | 2015-09-14 | 2015-09-14 | Semiconductor laser drive circuit reaches semiconductor laser including this circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520709037.1U CN204885822U (en) | 2015-09-14 | 2015-09-14 | Semiconductor laser drive circuit reaches semiconductor laser including this circuit |
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Cited By (11)
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| CN106505407A (en) * | 2016-12-29 | 2017-03-15 | 中科和光（天津）应用激光技术研究所有限公司 | A kind of pulsed laser diode drive circuit |
| CN106898946A (en) * | 2017-01-20 | 2017-06-27 | 华东师范大学 | For the turnable pulse width formula pulse generating circuit of semiconductor laser |
| CN108181621A (en) * | 2016-12-08 | 2018-06-19 | 北京万集科技股份有限公司 | A kind of bidifly light drive circuit and scanning type laser radar ranging equipment and method |
| CN110247644A (en) * | 2019-06-26 | 2019-09-17 | 清华大学 | Micro EDM nanosecond pulse power supply based on avalanche transistor |
| CN111670378A (en) * | 2019-01-09 | 2020-09-15 | 深圳市大疆创新科技有限公司 | Light emitting device, distance measuring device and mobile platform |
| CN112152593A (en) * | 2020-09-18 | 2020-12-29 | 深圳瑞波光电子有限公司 | Drive circuit and laser device |
| CN114019482A (en) * | 2021-10-27 | 2022-02-08 | 北醒（北京）光子科技有限公司 | Photoelectric receiving circuit and laser ranging device with same |
| CN114137381A (en) * | 2021-11-30 | 2022-03-04 | 深圳Tcl新技术有限公司 | Avalanche parameter measurement system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108181621A (en) * | 2016-12-08 | 2018-06-19 | 北京万集科技股份有限公司 | A kind of bidifly light drive circuit and scanning type laser radar ranging equipment and method |
| CN106505407A (en) * | 2016-12-29 | 2017-03-15 | 中科和光（天津）应用激光技术研究所有限公司 | A kind of pulsed laser diode drive circuit |
| CN106898946A (en) * | 2017-01-20 | 2017-06-27 | 华东师范大学 | For the turnable pulse width formula pulse generating circuit of semiconductor laser |
| CN111670378A (en) * | 2019-01-09 | 2020-09-15 | 深圳市大疆创新科技有限公司 | Light emitting device, distance measuring device and mobile platform |
| WO2020258640A1 (en) * | 2019-06-26 | 2020-12-30 | 清华大学 | Avalanche triode-based nanosecond pulse power supply for micro electric discharge machining |
| CN110247644A (en) * | 2019-06-26 | 2019-09-17 | 清华大学 | Micro EDM nanosecond pulse power supply based on avalanche transistor |
| CN114521313A (en) * | 2019-09-30 | 2022-05-20 | 株式会社村田制作所 | Laser diode driving circuit |
| CN114521313B (en) * | 2019-09-30 | 2024-05-14 | 株式会社村田制作所 | Laser diode driving circuit |
| JP7396470B2 (en) | 2020-04-15 | 2023-12-12 | 株式会社村田製作所 | Laser diode drive circuit |
| CN112152593A (en) * | 2020-09-18 | 2020-12-29 | 深圳瑞波光电子有限公司 | Drive circuit and laser device |
| CN112152593B (en) * | 2020-09-18 | 2024-05-10 | 深圳瑞波光电子有限公司 | Driving circuit and laser device |
| CN114019482A (en) * | 2021-10-27 | 2022-02-08 | 北醒（北京）光子科技有限公司 | Photoelectric receiving circuit and laser ranging device with same |
| CN114137381A (en) * | 2021-11-30 | 2022-03-04 | 深圳Tcl新技术有限公司 | Avalanche parameter measurement system |
| CN114137381B (en) * | 2021-11-30 | 2024-04-30 | 深圳Tcl新技术有限公司 | Avalanche parameter measurement system |
| CN117293653A (en) * | 2023-11-21 | 2023-12-26 | 深圳市柠檬光子科技有限公司 | Laser driving circuit and electronic equipment |
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