CN204068898U - A kind of circuit using avalanche transistor to produce high-voltage nanosecond level pulse signal - Google Patents
A kind of circuit using avalanche transistor to produce high-voltage nanosecond level pulse signal Download PDFInfo
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- CN204068898U CN204068898U CN201420538907.9U CN201420538907U CN204068898U CN 204068898 U CN204068898 U CN 204068898U CN 201420538907 U CN201420538907 U CN 201420538907U CN 204068898 U CN204068898 U CN 204068898U
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- 230000001105 regulatory effect Effects 0.000 claims abstract description 11
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical group C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 5
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 5
- 239000011734 sodium Substances 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
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- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000033228 biological regulation Effects 0.000 description 1
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CN201420538907.9U CN204068898U (en) | 2014-09-18 | 2014-09-18 | A kind of circuit using avalanche transistor to produce high-voltage nanosecond level pulse signal |
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CN201420538907.9U CN204068898U (en) | 2014-09-18 | 2014-09-18 | A kind of circuit using avalanche transistor to produce high-voltage nanosecond level pulse signal |
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CN204068898U true CN204068898U (en) | 2014-12-31 |
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CN201420538907.9U Expired - Fee Related CN204068898U (en) | 2014-09-18 | 2014-09-18 | A kind of circuit using avalanche transistor to produce high-voltage nanosecond level pulse signal |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106898946A (en) * | 2017-01-20 | 2017-06-27 | 华东师范大学 | For the turnable pulse width formula pulse generating circuit of semiconductor laser |
CN110247644A (en) * | 2019-06-26 | 2019-09-17 | 清华大学 | Micro EDM nanosecond pulse power supply based on avalanche transistor |
CN112713797A (en) * | 2020-12-02 | 2021-04-27 | 清华大学 | Cascaded regulation nanosecond pulse power supply based on double avalanche triodes and control method thereof |
-
2014
- 2014-09-18 CN CN201420538907.9U patent/CN204068898U/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106898946A (en) * | 2017-01-20 | 2017-06-27 | 华东师范大学 | For the turnable pulse width formula pulse generating circuit of semiconductor laser |
CN110247644A (en) * | 2019-06-26 | 2019-09-17 | 清华大学 | Micro EDM nanosecond pulse power supply based on avalanche transistor |
WO2020258640A1 (en) * | 2019-06-26 | 2020-12-30 | 清华大学 | Avalanche triode-based nanosecond pulse power supply for micro electric discharge machining |
CN112713797A (en) * | 2020-12-02 | 2021-04-27 | 清华大学 | Cascaded regulation nanosecond pulse power supply based on double avalanche triodes and control method thereof |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151029 Address after: 230601 Anhui University, 111 Jiulong Road, Hefei economic and Technological Development Zone, Anhui Patentee after: Anhui University Address before: 236061 Anhui University, No. 111 Jiulong Road, Hefei, Anhui Patentee before: Wang Diebing Patentee before: Lu Feng Patentee before: Hu Bangjun |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141231 Termination date: 20150918 |
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EXPY | Termination of patent right or utility model |